JP2009289801A - 発光装置及びその製造方法 - Google Patents
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- JP2009289801A JP2009289801A JP2008137945A JP2008137945A JP2009289801A JP 2009289801 A JP2009289801 A JP 2009289801A JP 2008137945 A JP2008137945 A JP 2008137945A JP 2008137945 A JP2008137945 A JP 2008137945A JP 2009289801 A JP2009289801 A JP 2009289801A
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Abstract
【解決手段】半導体からなる発光層と、ワイヤを接続可能なボンディング電極と、前記ボンディング電極を取り囲むようにその周囲に離間して設けられ且つ前記ボンディング電極との連結部を有する細線電極と、を有する上側電極と、前記発光層と前記上側電極との間に設けられた電流拡散層であって、前記上側電極の非形成領域に形成され前記発光層から放出された光を出射可能な凹部を有する電流拡散層と、を備えたことを特徴とする発光装置が提供される。
【選択図】図1
Description
しかしながら、この技術開示例では、凹部を発光層よりも深い位置までエッチングする必要があり製造プロセスが複雑となり、且つ発光部端面近傍が露出することにより結晶表面が劣化しやすいなどの問題を生じやすい。
図1は、本発明の第1の実施形態にかかる発光装置の模式図である。すなわち、図1(a)は平面図、図1(b)はA−A線に沿った断面図である。
GaPなどからなる透光性基板10の上に、第1のクラッド層14、発光層16、第2のクラッド層18、電流拡散層20、などからなる半導体積層体が設けられている。
また、図3は、エピタキシャルウェーハの模式断面図である。
透光性を有しn型であるGaP基板10と界面11において接着し、n型InGaAlPなどを含む接着層12(厚さ0.4μm、キャリア濃度4×1017cm−3)上に、上部成長層25が積層されている。
図4は、チップ表面近傍におけるNFP(Near Field Pattern:近視野像)を説明する図である。すなわち、図4(a)は第1の実施形態、図4(b)は比較例をそれぞれ表す。
図4(a)において、ボンディング電極40と細線電極42aとの距離L1、細線電極42と細線電極42bとの距離L2、及び細線電極42bと細線電極42cとの間の距離L3、はそれぞれ略20μmとしているが、もちろんこれに限定されるものではない。なお、本図では、図1(a)のA−A線に沿った径方向位置に沿ったNFPの相対発光強度を表している。
本実施形態では、凹部20c内に電流拡散層20の屈折率n3と、封止樹脂52の屈折率n1と、の間の屈折率n2(ただし、n3>n2≧n1)を有する透光性誘電体50を充填する。
Claims (5)
- 半導体からなる発光層と、
ワイヤを接続可能なボンディング電極と、前記ボンディング電極を取り囲むようにその周囲に離間して設けられ且つ前記ボンディング電極との連結部を有する細線電極と、を有する上側電極と、
前記発光層と前記上側電極との間に設けられた電流拡散層であって、前記上側電極の非形成領域に形成され前記発光層から放出された光を出射可能な凹部を有する電流拡散層と、
を備えたことを特徴とする発光装置。 - 前記凹部内に充填され、前記発光層から放出される光に対して前記電流拡散層の屈折率よりも低い屈折率と前記電流拡散層の透光性よりも高い透光性とを有する誘電体をさらに備えたことを特徴とする請求項1記載の発光装置。
- 前記上側電極と前記誘電体の表面を覆うように設けられ、前記誘電体の屈折率よりも低い屈折率を有する封止樹脂をさらに備えたことを特徴とする請求項2記載の発光装置。
- ボンディング電極と、前記ボンディング電極の周囲を取り囲むようにその周囲に離間して設けられ且つ前記ボンディング電極との連結部を有する細線電極と、を有する上側電極を、発光層の上方に設けられた電流拡散層の上方に形成する工程と、
前記上側電極の非形成領域である前記電流拡散層の表面をエッチングして凹部を形成する工程と、
を備えたことを特徴とする発光装置の製造方法。 - 前記電流拡散層の屈折率よりも低く且つ封止樹脂の屈折率以上の屈折率を有し、前記電流拡散層の透光性よりも高い透光性を有する誘電体を、前記凹部内に充填する工程をさらに備えたことを特徴とする請求項4記載の発光装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008137945A JP5150367B2 (ja) | 2008-05-27 | 2008-05-27 | 発光装置及びその製造方法 |
US12/364,567 US8482024B2 (en) | 2008-05-27 | 2009-02-03 | Light emitting device and method for manufacturing same |
TW98115549A TW201010140A (en) | 2008-05-27 | 2009-05-11 | Light emitting device and method for manufacturing same |
US13/914,749 US8963194B2 (en) | 2008-05-27 | 2013-06-11 | Light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008137945A JP5150367B2 (ja) | 2008-05-27 | 2008-05-27 | 発光装置及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012263647A Division JP5572202B2 (ja) | 2012-11-30 | 2012-11-30 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009289801A true JP2009289801A (ja) | 2009-12-10 |
JP5150367B2 JP5150367B2 (ja) | 2013-02-20 |
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JP2008137945A Expired - Fee Related JP5150367B2 (ja) | 2008-05-27 | 2008-05-27 | 発光装置及びその製造方法 |
Country Status (3)
Country | Link |
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US (2) | US8482024B2 (ja) |
JP (1) | JP5150367B2 (ja) |
TW (1) | TW201010140A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016526797A (ja) * | 2013-07-03 | 2016-09-05 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | メタライゼーション層の下に応力緩和層を有するled |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5150367B2 (ja) * | 2008-05-27 | 2013-02-20 | 東芝ディスクリートテクノロジー株式会社 | 発光装置及びその製造方法 |
JP5075786B2 (ja) * | 2008-10-06 | 2012-11-21 | 株式会社東芝 | 発光装置及びその製造方法 |
TW201106499A (en) * | 2009-08-03 | 2011-02-16 | Forward Electronics Co Ltd | High-efficiency light emitting diode |
US10804426B2 (en) * | 2014-10-31 | 2020-10-13 | ehux, Inc. | Planar surface mount micro-LED for fluidic assembly |
CN111477726A (zh) * | 2019-05-08 | 2020-07-31 | 伊乐视有限公司 | 用于流体组装的平面表面贴装微型led及其制备方法 |
US11393946B2 (en) * | 2020-11-30 | 2022-07-19 | PlayNitride Display Co., Ltd. | Micro LED structure |
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JP2005223100A (ja) * | 2004-02-04 | 2005-08-18 | Sharp Corp | 発光ダイオードの製造方法、発光ダイオード |
JP2006041479A (ja) * | 2004-06-24 | 2006-02-09 | Toyoda Gosei Co Ltd | 発光素子およびその製造方法 |
JP2006310721A (ja) * | 2005-03-28 | 2006-11-09 | Yokohama National Univ | 自発光デバイス |
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JP2007123517A (ja) * | 2005-10-27 | 2007-05-17 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
JP2008066554A (ja) * | 2006-09-08 | 2008-03-21 | Sanken Electric Co Ltd | 半導体発光素子 |
JP2008084973A (ja) * | 2006-09-26 | 2008-04-10 | Stanley Electric Co Ltd | 半導体発光デバイス |
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2008
- 2008-05-27 JP JP2008137945A patent/JP5150367B2/ja not_active Expired - Fee Related
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2009
- 2009-02-03 US US12/364,567 patent/US8482024B2/en active Active
- 2009-05-11 TW TW98115549A patent/TW201010140A/zh unknown
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2013
- 2013-06-11 US US13/914,749 patent/US8963194B2/en not_active Expired - Fee Related
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JP2006339546A (ja) * | 2005-06-06 | 2006-12-14 | Hitachi Cable Ltd | 発光ダイオード及びその製造方法 |
JP2007123517A (ja) * | 2005-10-27 | 2007-05-17 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
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Also Published As
Publication number | Publication date |
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US8963194B2 (en) | 2015-02-24 |
JP5150367B2 (ja) | 2013-02-20 |
TW201010140A (en) | 2010-03-01 |
US20090294795A1 (en) | 2009-12-03 |
US8482024B2 (en) | 2013-07-09 |
US20130270604A1 (en) | 2013-10-17 |
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