KR100914110B1 - 반도체 발광 소자 - Google Patents

반도체 발광 소자 Download PDF

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Publication number
KR100914110B1
KR100914110B1 KR1020070084788A KR20070084788A KR100914110B1 KR 100914110 B1 KR100914110 B1 KR 100914110B1 KR 1020070084788 A KR1020070084788 A KR 1020070084788A KR 20070084788 A KR20070084788 A KR 20070084788A KR 100914110 B1 KR100914110 B1 KR 100914110B1
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KR
South Korea
Prior art keywords
electrode
light emitting
semiconductor layer
peripheral edge
virtual straight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020070084788A
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English (en)
Korean (ko)
Other versions
KR20080023116A (ko
Inventor
코지 오츠카
요시히코 우치다
Original Assignee
산켄덴키 가부시키가이샤
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Application filed by 산켄덴키 가부시키가이샤 filed Critical 산켄덴키 가부시키가이샤
Publication of KR20080023116A publication Critical patent/KR20080023116A/ko
Application granted granted Critical
Publication of KR100914110B1 publication Critical patent/KR100914110B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020070084788A 2006-09-08 2007-08-23 반도체 발광 소자 Expired - Fee Related KR100914110B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006243691A JP2008066554A (ja) 2006-09-08 2006-09-08 半導体発光素子
JPJP-P-2006-00243691 2006-09-08

Publications (2)

Publication Number Publication Date
KR20080023116A KR20080023116A (ko) 2008-03-12
KR100914110B1 true KR100914110B1 (ko) 2009-08-27

Family

ID=39288981

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070084788A Expired - Fee Related KR100914110B1 (ko) 2006-09-08 2007-08-23 반도체 발광 소자

Country Status (3)

Country Link
JP (1) JP2008066554A (enExample)
KR (1) KR100914110B1 (enExample)
TW (1) TW200824151A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101164663B1 (ko) * 2007-12-28 2012-07-12 니치아 카가쿠 고교 가부시키가이샤 반도체 발광 소자 및 그 제조방법
JP5150367B2 (ja) 2008-05-27 2013-02-20 東芝ディスクリートテクノロジー株式会社 発光装置及びその製造方法
TWI424587B (zh) * 2008-06-30 2014-01-21 Luxtaltek Corp Light emitting diodes with nanoscale surface structure and embossing molds forming nanometer scale surface structures
JP5687858B2 (ja) * 2010-07-30 2015-03-25 スタンレー電気株式会社 半導体発光装置
JP5736930B2 (ja) * 2011-04-19 2015-06-17 日亜化学工業株式会社 半導体発光素子
JP2013183032A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体発光素子
CN103887418B (zh) * 2012-12-22 2017-06-30 赛恩倍吉科技顾问（深圳）有限公司 发光芯片组合
JP6287317B2 (ja) * 2013-02-28 2018-03-07 日亜化学工業株式会社 半導体発光素子
JP2014229648A (ja) * 2013-05-20 2014-12-08 シャープ株式会社 半導体発光素子
WO2015156123A1 (ja) * 2014-04-07 2015-10-15 旭化成イーマテリアルズ株式会社 光学基材及びその製造方法、並びに、積層体、レジスト剥離液
JP7413941B2 (ja) * 2020-07-03 2024-01-16 信越半導体株式会社 接合型半導体素子及び接合型半導体素子の製造方法
JP7354943B2 (ja) 2020-07-03 2023-10-03 信越半導体株式会社 接合型半導体受光素子及び接合型半導体受光素子の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649939B1 (en) 1999-09-10 2003-11-18 Osram Opto Semiconductors Gmbh & Co. Ohg Light-emitting diode with a structured surface
KR20040090465A (ko) * 2003-04-15 2004-10-25 마츠시타 덴끼 산교 가부시키가이샤 반도체 발광소자 및 그 제조방법
JP2006049855A (ja) * 2004-06-28 2006-02-16 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP2006100569A (ja) * 2004-09-29 2006-04-13 Sanken Electric Co Ltd 半導体発光素子およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818100A (ja) * 1994-06-24 1996-01-19 Showa Denko Kk 化合物半導体発光ダイオード

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649939B1 (en) 1999-09-10 2003-11-18 Osram Opto Semiconductors Gmbh & Co. Ohg Light-emitting diode with a structured surface
KR20040090465A (ko) * 2003-04-15 2004-10-25 마츠시타 덴끼 산교 가부시키가이샤 반도체 발광소자 및 그 제조방법
JP2006049855A (ja) * 2004-06-28 2006-02-16 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP2006100569A (ja) * 2004-09-29 2006-04-13 Sanken Electric Co Ltd 半導体発光素子およびその製造方法

Also Published As

Publication number Publication date
KR20080023116A (ko) 2008-03-12
TWI357162B (enExample) 2012-01-21
TW200824151A (en) 2008-06-01
JP2008066554A (ja) 2008-03-21

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