TW200811956A - Substrate processing apparatus - Google Patents

Abstract

To provide a substrate processing apparatus which prevents a lower surface of a substrate from getting contaminated and damaged, and uniformly heat treats a plane of the substrate. The substrate processing apparatus 1 holds the substrate 90 without contact on a substrate holding plate 12, and performs heat treatment while moving the substrate 90 in one direction. Thus, a member such as a supporting pin does not come into contact with the lower surface of the substrate 90, to prevent the substrate 90 from getting damaged or contaminated. The heat treatment is not partially nonuniform due to the member such as the supporting pin. Since the heat treatment takes place while the substrate 90 is being carried, the plane of the substrate 90 is uniformly heat-treated irrespective of a gas flow on the lower surface of the substrate 90.

Description

[Technical Field] The present invention relates to a substrate processing apparatus which performs heat treatment on a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display device, or a glass substrate for pDP. [Prior Art] From the past, in the substrate manufacturing step, the treatment of applying the anti-agent liquid on the surface of the substrate was performed, and thereafter, heat treatment was performed in order to improve the adhesion between the surface of the substrate and the resist (heat treatment) And cooling treatment). In the prior substrate processing apparatus for performing heat treatment, the substrate is placed on a substrate holding plate disposed in the processing chamber, and the substrate is heated or cooled. As shown in FIG. 20, the previous substrate processing apparatus 1 is configured to have a plurality of support pins 1〇2 adjacent to the pins on the substrate holding plate 101, and the support pins 102 are placed on the substrate 109 at the same time. The substrate ι 9 is heated or ~. The structure of the prior substrate processing apparatus of this embodiment is disclosed, for example, in Patent Document 1. [Patent Document 1] JP-A-H11-283909 SUMMARY OF INVENTION [Problems to be Solved by the Invention] However, in the prior substrate processing apparatus, since the lower portion of the substrate abuts the support pin, there is support The pin causes the underside of the substrate to be contaminated or damaged. Further, in the conventional substrate processing apparatus, since the substrate is subjected to heat treatment in a state where the lower portion of the substrate is pressed against the support pin, the state of the heat treatment is uneven in the surface of the substrate. 120801.doc 200811956 In particular, in recent years, since the object to be processed (substrate) has a tendency to increase in size, there is a need to hold the substrate by a plurality of support pins. In this state, the above-mentioned problem to be solved becomes more apparent. The present invention has been made in view of the circumstances, and an object thereof is to provide a substrate processing apparatus which is capable of preventing uniform heat treatment in the surface of a substrate while preventing (4) damage to the underside of the substrate. [Technical means to solve the problem]

In order to solve the above-mentioned problems to be solved, the invention relating to claim 1 is characterized in that the substrate processing apparatus for performing heat treatment on the substrate comprises: a substrate holding plate which is formed by a plurality of ejection orifices formed on the upper surface And the substrate is held in a non-contact manner on the upper surface; the temperature adjustment mechanism is configured to perform temperature adjustment on the substrate that is held in a non-contact manner on the substrate above the substrate holding plate; and the transfer mechanism is The substrate held in the above-described upper surface of the substrate holding plate in a non-contact manner is transported along the above-described upper surface. The invention of claim 2 is the substrate processing apparatus according to claim 2, wherein a plurality of suction holes for sucking the upper gas are formed on the upper surface of the substrate holding plate. The invention according to claim 2, wherein the plurality of ejection holes and the plurality of suction holes are formed on the upper surface of the substrate holding plate, and are arranged in a lattice-like dot-like perforation. The invention according to claim 2, wherein the plurality of ejection holes and the plurality of suction holes are formed on the substrate upper surface of the substrate holding plate, and are formed in the transfer mechanism Direction is 120801, d〇c 200811956 Slotted perforation in the direction of intersection. The invention of claim 4, wherein the plurality of ejection holes and the plurality of suction holes are attached to the upper surface of the substrate holding plate, and are transported along the transport mechanism The direction is staggered. Columns. 3: The invention relating to claim 6 is the substrate processing apparatus of claim 4, further comprising: a slit width adjusting mechanism that adjusts the plurality of ejection/exit holes or the plurality of suction holes The width of the slit. The invention of claim 7 is the substrate processing apparatus according to claim 7, wherein the transport mechanism includes: a contact portion that is in contact with the substrate from the side after the transport direction; and a moving portion that is configured as described above The abutting part moves to the transport direction. The invention relating to claim 8 is the substrate processing apparatus of claim 1, wherein the transfer mechanism includes a rocking mechanism for shaking the substrate. The invention of claim 9 is the substrate processing apparatus of claim 1, wherein the temperature adjustment mechanism comprises: a first temperature adjustment mechanism that is thermally radiated between the substrate holding plate and the substrate. The substrate is subjected to a temperature of -1 week, and the second temperature adjustment mechanism is configured to perform temperature adjustment of the substrate by heat exchange between the gas ejected from the plurality of ejection holes and the substrate.

^ Festival. The invention according to claim 9 is the substrate processing apparatus of claim 9, comprising: a plurality of the substrate holding plates arranged along a transport direction of the transporter $; and the ith temperature adjustment mechanism A plurality of the aforementioned substrate holding plates are individually adjusted in temperature. The invention relates to the substrate processing apparatus of claim 1 , wherein the first temperature adjustment mechanism adjusts the temperature individually in each of the plurality of substrate holding plates. The invention relating to claim 12 is the substrate processing apparatus of the request, wherein the second temperature adjustment mechanism is ejected from the ejection holes formed in the region according to the temperature of each region of the substrate holding plate. The gas is temperature regulated. The substrate processing apparatus according to any one of claims 1 to 12, further comprising: a coating processing unit that is disposed on an upstream side of the substrate holding plate in a conveying direction of the conveying mechanism, A person who applies a treatment liquid on the substrate. [Embodiment] The invention according to claims 1 to 13 includes a substrate holding plate which is formed in a non-contact manner by ejecting gas from a plurality of ejection holes formed thereon. The temperature adjustment mechanism is configured to perform temperature adjustment on a substrate that is held in a non-contact manner on the substrate holding plate, and a transfer mechanism that is held in a non-contact manner on the substrate holding plate. The substrate is transported along the top of the substrate. For this reason, it is not necessary to support members such as pins to abut against the underside of the substrate, and damage and contamination of the substrate can be prevented. Further, the heat treatment does not cause partial unevenness due to members such as support pins. Further, since the heat treatment is performed while the substrate is being conveyed, the surface of the substrate can be uniformly heat-treated irrespective of the flow of the gas on the lower surface side of the substrate. In particular, according to the invention of claim 2, a plurality of suction holes for sucking the gas above are formed on the upper surface of the substrate holding plate. For this reason, the buoyancy of the upper substrate and the adsorption force to the substrate holding plate act, and the substrate is stably held at a certain height on the substrate holding plate. In particular, according to the invention of claim 3, the plurality of ejection holes and the plurality of suction holes are line-shaped perforations arranged in a meandering shape on the substrate holding plate. Based on this, on the surface of the substrate holding plate, a plurality of ejection holes and a plurality of pumping

The suction holes are all made of ❹j, and the substrate is horizontally placed (4) while being stably held on the substrate holding plate. In particular, according to the invention of claim 4, the plurality of ejection holes and the plurality of suction holes are formed on the upper surface of the substrate holding plate and formed into slit-like perforations formed in a direction orthogonal to the conveying direction of the conveying mechanism. For this reason, the flow of the gas on the substrate holding plate is uniform in the direction orthogonal to the conveyance direction of the substrate. Since the substrate is uniformly heated in the direction of the transport and the direction orthogonal to the transport direction, the entire surface of the substrate is uniformly heated. In particular, according to the invention of claim 5, the plurality of ejection holes and the plurality of suction holes are arranged on the upper surface of the substrate holding plate along the conveying direction of the conveying mechanism, and are further arranged in the substrate holding plate. In the above, a plurality of ejection holes and a plurality of suction holes are arranged in a uniform sentence. The substrate is held in a horizontal posture while being stably held on the substrate holding plate. In particular, the substrate processing apparatus according to claim 6 further includes a slit width adjusting mechanism that adjusts the slit width of the plurality of ejection holes or the plurality of suction holes. For this reason, the amount of suction of the gas from the plurality of nozzle holes can be arbitrarily adjusted by the discharge amount of the 12-side l.doc 200811956 or the number of suctions of the plurality of suction holes. In particular, according to the invention of claim 7, the conveying mechanism includes: a contact portion that abuts against the substrate from the rear side in the conveying direction; and a moving portion that moves the abutting portion in the conveying direction. For this reason, the substrate can be transported in a simple and stable manner. - In particular, according to the invention of claim 8, the conveying mechanism includes a rocking mechanism for rocking the substrate. For this reason, even in a small space, heat treatment can be performed while transporting the substrate. Therefore, the area occupied by the substrate processing apparatus can be reduced. In particular, according to the invention of claim 9, the temperature adjustment mechanism includes a temperature adjustment mechanism that adjusts the temperature of the substrate by heat radiation between the substrate holding plate and the substrate; and the second temperature adjustment mechanism, It is a temperature adjustment of the substrate by the exchange of the gas slabs which are ejected from a plurality of f-out holes. For this reason, a more uniform heat treatment can be performed in the surface of the substrate. In particular, according to the invention of claim 10, the substrate processing apparatus includes a plurality of substrate holding plates arranged along the conveying direction of the carrying mechanism; the first temperature adjustment means that the mechanism is a plurality of substrate holding plates for individual temperature adjustment. . Based on this, it is possible to carry out heat treatment on the substrate while continuously transporting the substrate by the transport mechanism. Further, since the rapid temperature change of the substrate can be prevented, the substrate can be heat-treated in a uniform manner. In particular, according to the invention of claim 11, the i-th temperature adjustment mechanism holds a plurality of substrate holding plates - individually adjusting the temperature in each region. For this reason, the substrate can be made to change temperature in a more gradual manner. 120801.doc 200811956 In particular, according to the invention of claim 12, the second is that the younger brother 2/the degree of the franchise mechanism is formed according to the temperature of each area of the soil holding plate and is formed in the hole of the area. The gas is temperature regulated. Meihe 揣 苴 4c ^ soil; this port' can heat the substrate on the substrate holding plate in a more uniform manner. In particular, according to the invention of claim 13, the substrate processing apparatus further includes a processing unit that applies a processing liquid on the upper surface of the substrate to the upstream side of the substrate holding plate in the conveying direction of the conveying mechanism. Based on this, it can be on the substrate

The processing liquid is subjected to a heat treatment in the subsequent four-layer shirt type. ::: The drying treatment after the application of the treatment liquid is omitted, and the structure for processing the substrate is simplified. The following two wheat diagrams are described for a good embodiment of the invention. <L first embodiment> Fig. 1 is a plan view showing the configuration of a substrate processing apparatus 1 according to a first embodiment of the present invention. 2 is a longitudinal cross-sectional view showing the substrate processing apparatus of FIG. 1 cut off. In Fig. 2, the structure of the supply and exhaust system to the substrate processing apparatus 1 is also shown. In addition, in each of FIG. 1, FIG. 2 and subsequent figures, in order to clearly show the positional relationship of each part, an xyz orthogonal coordinate system is provided, and the earth plate processing is performed in the photolithography step. a device for performing heat treatment on the surface of the substrate 9G after the resist coating; and the photolithography step is for selectively selecting the surface of the angled glass substrate (hereinafter referred to as "substrate") 90 for the liquid helium display device. Engraved. As shown in Figs. 1 and 2, the substrate processing apparatus 1 mainly includes a processing chamber 11, a substrate holding plate 12, and a substrate transfer mechanism 13. 120801.doc -11 - 200811956 The processing chamber 11 is a housing having a worker for heat-treating the substrate 9G therein. Substrate retention board! 2 and substrate transfer mechanism! The 3 series is housed inside the processing chamber η. Further, the side portion of the processing (4) is provided for carrying out the loading and unloading of the substrate 90 in the processing chamber u.

The opening and closing door ub for opening and closing the loading/unloading port 11a, when the substrate 90 is carried into the inside and outside of the processing chamber 1j, the opening and closing door 11b is opened, and the substrate 9 is carried out of the processing chamber η and carried in and out. When the substrate is transferred to the substrate and the substrate 90 is subjected to heat treatment in the process of 11 ja, the opening and closing door lib is closed, and the inside of the processing chamber u is in an airtight state. The substrate holding plate 12 is for holding the substrate 9 非 in a non-contact manner, and the substrate material to be held is heated to have a flat shape, and is disposed in a horizontal posture in the processing chamber. . In the substrate holding plate 12, a plurality of discharge holes for discharging nitrogen gas upward and a plurality of suction holes 12 for suctioning the gas on the upper portion are formed. The plurality of ejection holes 12a are through holes for penetrating the substrate holding plate 12 up and down, and are formed in a spot (spot) shape in a plan view. Each of the discharge holes Pa is connected to the air supply pipe 14a on the lower surface side of the substrate holding plate 12. In the air supply pipe, the nitrogen supply source 14b is connected to the upstream side, and the opening and closing valve 14c and the heater 14d are inserted in the middle of the path of the air supply pipe 14a. In this case, when the heater (4) is operated while the opening and closing valve 14c is opened, nitrogen gas is supplied from the nitrogen gas supply source, and the nitrogen gas heated by the heater 14d is supplied from the discharge port 2&amp; toward the substrate holding plate 12. The upper part is ejected. On the other hand, the plurality of suction holes 12b form the substrate holding plate 12 as an abutment of the upper and lower bilge, and form a spot (spot) in a plan view. Each of the suction holes 1 is connected to the exhaust pipe Me on the lower surface side of the substrate holding plate 12 by 120801.doc -12-200811956. On the downstream side of the exhaust pipe He, an exhaust portion 14f for forcibly exhausting by vacuum (4) is connected, and a 14 g for opening and closing is inserted in the middle of the path of the gas pipe 14e. For this reason, if the opening and closing valve 14g' is opened, the gas system in the upper portion of the substrate holding plate is sucked toward the suction hole 12b, and is exhausted to the gas portion 14f via the exhaust pipe 14e. The substrate 90 is placed on the substrate holding plate 2, and when the opening and closing valve 14c and the opening and closing valve I4g are opened, nitrogen gas is sprayed from the plurality of ejection holes 12a under the substrate 90 while the substrate holding plate 12 and the substrate 9 are interposed therebetween. The gas system is sucked by a plurality of suction holes 12b. In this way, the buoyancy of the upper side of the substrate 9 and the adsorption force to the substrate holding plate 12 act, so that the substrate 9 is held on the substrate holding plate 12 at a constant height in a non-contact manner. Further, as shown in Fig. 1, a plurality of ejection holes 12a and a plurality of suction holes 12b are arranged in a staggered manner in a plan view. That is, the plurality of ejection holes 12a and the plurality of suction holes i2b on the substrate holding plate 12 are arranged in a uniform sentence. For this reason, both the buoyancy and the adsorption force of the substrate 90 are uniformly applied in the plane of the substrate 9 while the substrate 90 is stably held on the substrate holding plate 12 while maintaining the horizontal posture. Further, a heater 12c is embedded in the inside of the substrate holding plate 12. When the heater 12c is operated, the substrate holding plate 12 is heated and heated to a specific temperature. For this reason, the substrate 9 held by the substrate holding plate 12 is heated by the light-radiating heat from the substrate holding plate 12. Further, under the substrate 90 which is held on the substrate holding plate 12, nitrogen gas is blown, and the heater 14d is heated to be ejected from the plurality of ejection holes 12a. 120801.doc -13 - 200811956 For this reason, the substrate (4) is heated by receiving heat from the gas: that is, the substrate processing device 丨 includes: a second heating mechanism that passes the heat generated by the heater through the substrate The holding plate 12 and the substrate are arranged, and the second heating means 'heats the heat generated by the heater 14d to the substrate 9 through the nitrogen gas discharged from the plurality of discharge holes 12a.

The substrate transfer mechanism 13 is a mechanism for transporting the substrate 90 on the base (four) holding plate 12 in a non-contact manner. Substrate transfer mechanism. The pair of rail portions 13a' are attached to the left and right sides of the substrate holding plate 12 (square side and -y=) along the substrate holding plate 12; and the moving portion m is moved along the rail portion 13a. . The rail portion 13a and the moving portion ub may be configured by various known moving mechanisms, but may be configured by, for example, a mechanism that converts the rotation of the motor into a linear motion via a lead screw or a conveyor belt, or A mechanism that uses a linear motor. When the substrate transport mechanism 13 is operated, the pair of moving portions i3b advance in the X-axis direction along the end portion 13a. Further, a contact portion Uc for abutting against the end surface on the -x side of the substrate 90 is fixed to each of the moving portions ub. Based on this, if the moving portion 13b is moved in the +x direction, the abutting portion 13A abuts against the end surface of the substrate 9 that is held by the substrate holding plate 12 in a non-contact manner, and the substrate 90 is abutted. The joints 13c move together in the +χ direction. Further, the substrate processing apparatus includes the control unit 15 in addition to the above configuration. Fig. 3 is a block diagram showing a connection structure between the above-described respective units and the control unit in the substrate processing apparatus. As shown in Fig. 3, the control (4) system, the opening and closing door center, the substrate transfer mechanism 13, the opening and closing valves 14c, 14g, the heater 12c, and more specifically, 14d Wang is electrically connected, and these actions are controlled 120801. Doc -14- 200811956 The control unit 15 is constituted by a computer including a CPU and a memory, and the computer operates in accordance with a program installed in a computer, and the above-described control operation is performed by this method. 4 to 7 show the above substrate processing apparatus! A diagram of the processing state at each stage when the substrate 9 is processed. Hereinafter, the processing flow of the substrate processing apparatus will be described with reference to Figs. 4 to 7 . When the substrate 90 after the resist coating is transferred by the specific transfer robot, first, the substrate processing apparatus opens and closes the opening and closing door Ub, and carries the substrate 9 into the processing chamber through the carry-in/out port 11a (FIG. 4). State). In the substrate holding plate 12 processed in the 11th, the discharge of nitrogen gas from the plurality of discharge holes 12a and the suction of the plurality of suction holes 2b are started. Further, the movement start position of the pair of moving portions 13b on the deepest side of the processing chamber is in a waiting state. The substrate that has been carried into the processing chamber is placed in a non-contact manner in front of the moving portion 13b on the substrate holding plate 丨2. When the substrate 90 is placed on the substrate holding plate 12, the transfer robot ruler is retracted to the outside of the processing chamber 11, and the opening and closing threshold b is closed (state of Fig. 5). Thereafter, the pair of moving portions 13b (refer to Fig. 1) are slowly moved in the +x direction along the rail portion 13a (refer to Fig. 1). In this manner, the contact portion 13c abuts against the end surface on the -X side of the substrate 90, and the substrate 90 is slowly conveyed in the +χ direction (the state of Fig. 6). The substrate 90 is conveyed on the substrate holding plate 12, and receives radiant heat from the substrate holding plate 12 and nitrogen gas from the plurality of ejection holes 12a, and is heated. When the heating process at the specific time is completed and the substrate 90 is transported to the position where the transfer is completed 120801.doc -15 - 200811956, the substrate processing apparatus 1 opens the opening and closing door lib, and the substrate 90 is moved to the outside of the processing chamber u by the transfer robot R. Move out (state of Figure 7). Here, since the substrate 90 is held on the substrate holding plate in a non-contact manner, when the substrate 9 is pulled away from the substrate holding plate 12, peeling electrification does not occur in the substrate: 9G. Microparticles are attached to the surface of the substrate 90 by static electricity. As described above, the substrate processing apparatus 1 of the present embodiment holds the substrate 9 非 in a non-contact manner on the substrate holding plate ’ 2 while moving the substrate 90 in one direction, and performs heat treatment. For this reason, it is not necessary to support the member such as a pin to abut against the lower surface of the substrate 90, and damage and contamination of the substrate 9 are prevented. Further, the heat treatment does not cause partial unevenness due to members such as support pins. Further, since the heating process is performed while the substrate 9 is being conveyed, the surface of the substrate 90 is uniformly heat-treated irrespective of the flow of the gas on the lower surface side of the substrate 90. &lt;2. Second embodiment&gt; Fig. 8 is a plan view showing a configuration of a substrate processing apparatus 2 according to a second embodiment of the present invention. Further, Fig. 9 is a longitudinal cross-sectional view showing the substrate processing apparatus 2 of Fig. 8 cut by a ΙΧ·ΙΧ line. This substrate processing apparatus 2 has the same configuration as the substrate processing apparatus 1 of the first embodiment except that the discharge holes and the suction holes of the substrate holding plate 12 are formed. For the reason of this, the same reference numerals are given to the same as those of FIGS. 1 and 2 in FIGS. 8 and 9 for the common processing of the substrate processing apparatus of the first embodiment, and the processing of the substrate is omitted in the following sections. The substrate holding plate 22 of the apparatus 2 is formed to spray 120801.doc •16-200811956 upward, a plurality of ejection holes 22a of the holes, and a suction hole 22b for sucking the gas on the upper portion. The plurality of discharge holes 22a are slit-like perforations formed on the upper surface side of the substrate holding plate 2. Each of the discharge holes 22 is formed in a direction orthogonal to the conveyance direction of the soil plate 90 (y-axis direction), and is arranged along the substrate 9 to be oriented in the (X-axis direction). In the state of the substrate processing apparatus, the gas supply pipe 14a is connected to each of the discharge holes 22a. The nitrogen supply source w is connected to the upstream side of the gas supply pipe 14a: the gas supply pipe (4) is only in the middle By opening and closing the valve 14c and the heater 14d, the heater (4) is operated while the opening and closing valve Ue is opened, and nitrogen gas is supplied from the nitrogen gas supply source 14b, and the nitrogen gas is heated by the heater (4). The discharge holes 22a are ejected toward the upper surface of the substrate holding plate 12. On the other hand, the plurality of suction holes 22b are slit-shaped perforations formed on the upper surface side of the substrate holding plate 12. Each of the suction holes 22b is formed in an orthogonal manner. The direction of the substrate 90 in the transport direction (y-axis direction) is arranged along the transport direction (X-axis direction) of the substrate 9. The same as the substrate processing apparatus (9) of the i-th embodiment, the respective suction holes 221 &gt; The exhaust pipe 14 is connected to the downstream side of the exhaust pipe 14e. The exhaust unit 14 that performs forced exhaust such as a vacuum system; the opening and closing valve 14g is inserted in the middle of the path of the exhaust pipe 14e. Therefore, if the opening and closing valve 14 is opened, the gas in the upper portion of the substrate holding plate 12 is opened. The suction hole 22b is sucked, and is exhausted to the exhaust portion i4f via the exhaust pipe. The substrate 90 is placed on the substrate holding plate 12, and when the opening and closing valve 14c and the opening and closing valve 14g are opened, the opening and closing valve 14c and the opening and closing valve 14g are opened. Nitrogen gas is sprayed from the plurality of ejection holes 22&amp; under the substrate 90, and the gas system between the substrate holding plate 12 and the substrate 9 is sucked by a plurality of suction holes 22b. In a manner, the buoyancy of the upper side of the substrate 9 and the adsorption force to the substrate holding plate 12 act, so that the substrate 9 is held on the substrate holding plate 12 at a constant height in a non-contact manner. As shown, a plurality of ejection holes 22a and a plurality of suction holes: 22 are arranged in a staggered manner along the X-axis direction, that is, on the substrate holding plate 12, a plurality of ejection holes 22a and a plurality of pumping holes The suction holes 22b are evenly arranged. Based on this, the buoyancy of the substrate 90 is The adsorption force is uniformly applied in the surface of the substrate 9 while the substrate 90 is stably held on the substrate holding plate 2 while maintaining the horizontal posture. The substrate 90 is heat-treated in the substrate processing apparatus 2. The processing is performed in the same manner as the processing steps of the first embodiment shown in FIGS. 4 to 7. That is, the substrate processing apparatus 2 carries the substrate 90 into the processing chamber via the carry-out port 1a. And holding the substrate 9A in the non-contact manner on the substrate holding plate 12 (refer to Fig. 5). Next, the substrate 9 is heated while being transported in the +x direction by the abutting portion 13c ( Referring to Fig. 6), the substrate 90 is again carried out of the processing chamber 经由 via the carry-out port Ua (refer to Fig. 7). The substrate processing apparatus 2 of the present embodiment also holds the substrate 9 _ _ on the substrate holding plate 12 in a non-contact manner, and performs heat treatment while moving the substrate 90 in one direction. For this reason, it is not necessary to support members such as pins to abut against the base and the lower surface of the plate 90, thereby preventing damage and contamination of the substrate 90. Further, the heat treatment does not cause partial unevenness due to members such as support pins. Further, since the substrate 90 is transported and heat-treated, regardless of the flow of the gas on the lower surface side of the substrate 90, the surface of the substrate can be uniformly heat-treated by 120801.doc -18-200811956. The discharge hole 22a and the suction hole m of the present embodiment are formed in a slit shape in a direction orthogonal to the direction in which the substrate core is formed. For this reason, in the conveyance side of the disc substrate 90, the direction of the flow of the crucible and the gas is in the direction of the parent, and the direction of the conveyance on the substrate holding plate 12 is positive =:. Therefore, the substrate 9° is uniformly twisted in both the transport direction and the direction of the transport direction, and the entire system in the surface of the panel 90 is extremely uniformly heated. ,,,,base

&lt;3. Modifications of the first embodiment and the second embodiment. The substrate processing apparatus is a device for heating the substrate %, but the substrate processing apparatus of the present invention is for cooling the substrate row. The skirt can also be set. When the substrate 9G is cooled, the substrate processing apparatus 2, 12c, and the heater 14d may be replaced by a cooling mechanism. cold

Although the mechanism can be realized by various branches, the configuration can be as follows: for example, the substrate holding plate η or the nitrogen gas in the gas supply pipe 14a is passed through a water-cooling pipe through which cooling water flows. Cooler. Further, the substrate transfer mechanism 13 is a mechanism for imparting a thrust to the substrate 90 from the rear side in the transport direction of the substrate 9. However, the substrate transfer mechanism of the present invention is not limited to the above mechanism. For example, a mechanism for holding the substrate 90 from the left and right sides (side and side) of the substrate 9 while transporting the substrate 9 in the x-axis direction may be employed. For example, a mechanism for pulling the substrate 9A toward the front side in the transport direction of the k-substrate 90 may be employed. Further, the substrate transport mechanism 13 transports the substrate 9 in only one direction (+乂 direction), but the substrate transport mechanism in the present invention may be transported in a direction in which the substrate 9 is transported in two or more directions. For example, as shown in Fig. 1, the rocking mechanism 16 for transporting the substrate 9 in the +χ direction and the direction of the parent may be used. Shake 120801.doc -19·200811956 The moving mechanism 16 includes a second moving portion 16b provided on the substrate 9〇2_x side and a second moving portion 16d provided on the +x side of the substrate 90. The second moving portion 16b and the second moving portion 16d are moved in the X-axis direction along the arm portion -6 and the side portion which are laid along the side portion of the substrate holding plate 2, and are attached to the upper portion of each moving portion. There are abutting portions 16c and 16e that abut against the substrate: 9 〇 end faces. The rocking mechanism 16 alternately moves the first moving portion 16b and the second moving portion 16d in the +x direction and the -X direction, and interlaces the substrate 90 in the +X direction and the x direction with the abutting portions 16c and 16e. . • In this way, even in a small space, the substrate 90 can be transferred while being heated. Therefore, the occupied area of the substrate processing apparatus 丨 (or 2) can be reduced. Further, in the substrate processing apparatus 2, the slit widths of the ejection holes 22 &amp; and the suction holes 22b are constant, but the slit widths may be adjusted in accordance with the processing conditions of the substrate 9A. For example, as shown in Fig. 2 and Fig. 2, a pair of slit width adjusting plates 22c may be attached to the upper portion of the discharge hole 22a. The pair of slit width adjusting plates 22c are attached to the upper surface of the base plate holding plate 12 along the discharge holes 22a, and the mounting position thereof can be adjusted in the width direction of the discharge holes 22a. In this manner, by adjusting the attachment position of each slit width adjusting plate 22c, the slit width of the ejection hole 22a can be adjusted. The same slit width adjusting plate 22c may be attached to the upper portion of the suction hole 22b. Alternatively, as shown in FIG. 13 and FIG. 14, one slit visibility adjusting plate 22 (1 may be attached to the upper portion of the discharge hole 22 &amp; The slit width adjusting plate 22d is attached to the upper portion of the discharge hole 22a of the substrate holding plate 12. If a plurality of slit width adjusting plates 22d having different widths of the slits sl are prepared in advance, the discharge holes 22a are replaced by the slits 120801, d〇c -20- 200811956 The slit width adjusting plate 22d can adjust the slit width of the discharge hole 22a. The same slit width adjusting plate 22d can be attached to the upper portion of the suction hole 22b. Further, the substrate processing apparatuses 1 and 2 include a first heating mechanism that supplies heat from the heater 12c to the substrate 90 via the substrate holding plate 12, and a second heating mechanism that is derived from the heater i4d. The heat is applied to the substrate 90 via nitrogen gas. However, if only one of these heating mechanisms is included,

can. However, by using these two heating mechanisms, the substrate 90 on the substrate holding plate 12 can be more uniformly heated. Further, the substrate processing apparatus and the apparatus for performing the processing on the angled glass substrate for the liquid crystal display device are the same as those of the substrate processing apparatus of the present invention, such as a semiconductor wafer or a PDP glass substrate. can. &lt;4. Third Embodiment FIG. 15 is a plan view showing a configuration of a substrate processing apparatus 3 according to a third embodiment of the present invention. The substrate processing apparatus 3 is a device for performing a coating treatment, a heat treatment, and a cooling on the substrate 90 in the photolithography step, and the photomasking step is to selectively etch the surface of the substrate. . The substrate processing apparatus 3 mainly includes a resist coating processing unit 4, a plurality of heat processing units 5 to 9, and a substrate transport mechanism 3 i. Fig. 16 is a longitudinal sectional view showing a resist coating treatment unit 4. First, the structure of the anti-residue coating treatment unit 4 will be described with reference to Figs. 15 and 16 . The anti-coating treatment portion 4 is a treatment portion for applying a resist to the upper surface of the substrate 9 to form a etchant film. As shown in Figs. 15 and 16, the resist coating 12080I.doc • 21 - 200811956 portion 4 mainly includes a processing chamber 41, a substrate holding plate 42, and a nozzle portion 43. The processing chamber 41 includes a processing chamber upper portion 41a and a processing chamber lower portion 41b which face each other. The processing chamber upper portion 4a is configured to be vertically movable up and down. When the processing chamber upper portion 41a is lowered, the processing chamber upper portion 41a and the processing chamber lower portion 41b are in contact with each other to form an airtight processing chamber 41. Further, when the processing chamber upper portion 4a1 is raised, a gap is formed between the processing chamber upper portion 41a and the processing chamber lower portion 41b, and a state in which the substrate 9 can be transported between the inside and the outside of the processing chamber 41 is shown (Fig. 6 status). The substrate holding plate 42 is inside the processing chamber 41 for holding the substrate of the substrate 9. The substrate holding plate 42 has a flat outer shape, and the substrate 9 is placed on the horizontal surface thereof. The substrate holding plate 42 is formed with a plurality of discharge holes 42a for discharging nitrogen gas upward and a plurality of suction holes 42b for suctioning the gas on the upper portion. The plurality of ejection holes 42a pierce the substrate holding plate 42 up and down, and form a spot (spot) in a plan view. Each of the discharge holes 42a is connected to the air supply pipe 44a on the lower surface side of the substrate holding plate 42. A nitrogen supply source 44b is connected to the upstream side of the air supply pipe 44&amp; and an opening/closing valve 44c is interposed in the middle of the path of the air supply pipe 443. Based on this cause, such as opening and closing the valve 44. Then, nitrogen gas is supplied from the nitrogen gas i, the ''σ source 441>, and nitrogen gas is ejected from the discharge holes 42 &amp; to the upper portion of the substrate holding plate c. * On the other hand, the plurality of suction holes 42b "the upper and lower shell holes of the substrate holding plate are formed, and the spots (spots) are formed in a plan view. Each of the suction holes is a lower side of the substrate holding plate 42. It is connected to the exhaust pipe. The downstream side of the exhaust gas distribution &amp; 4 4 e is connected to a row that is forced to exhaust by a vacuum pump or the like. 120801.doc •22· 200811956 gas portion 44f; path in the exhaust pipe 44e In the meantime, when the opening and closing valve 44g is opened, the gas system in the upper portion of the substrate holding plate 42 is sucked toward the suction hole 42b, and is discharged to the exhaust portion 44f via the exhaust pipe 44e. - The substrate is placed on the substrate holding plate 42, and if the opening and closing valve 44 〇 and the opening and closing valve 44g are opened, nitrogen gas is blown from the plurality of ejection holes 42a under the substrate - 90 while the substrate holding plate 42 The gas system between the substrate 90 and the substrate 90 is sucked by the reciprocating plurality of suction holes 42b. In this way, the buoyancy of the substrate 9 upward and the adsorption force to the substrate holding plate 42 act, and the substrate 9 is placed The substrate holding plate 42 is held at a constant height in a non-contact manner. The plurality of ejection holes 42a and the plurality of suction holes 42b are arranged in a staggered manner in a plan view. That is, on the substrate holding plate 42, a plurality of ejection holes 42a and a plurality of suction holes 4 are formed in a row. According to this reason, both the buoyancy and the adsorption force of the substrate 90 uniformly act in the plane of the substrate 9', and the substrate 90 is stably held on the base φ plate holding plate 12 while maintaining the horizontal posture. The nozzle portion 43 is a discharge mechanism for discharging the resist liquid on the substrate % held by the substrate holding plate 42. The nozzle portion 43 is connected to a resist liquid supply source (not shown); In the lower portion of the nozzle portion 43, a slit-shaped discharge port that is bored in the y-axis direction is formed. Further, the nozzle portion 43 is configured such that the surface of the substrate 9A on the stone substrate holding plate 42 can be pivoted In response to this, the nozzle portion 43 can scan the upper surface of the substrate 90 held on the substrate holding plate 42 and apply the anti-residue liquid supplied from the resist liquid supply source to the substrate. Above 90. 120801 .doc •23· 200811956 Heat Treatment Department 5 9 is an equivalent structure. Fig. 17 is a longitudinal sectional view thereof. Hereinafter, the structure of the heat treatment portions 5 to 9 will be described with reference to Figs. 15 and 17. As shown in Figs. 15 and 17, the heat treatment portion is provided. 5 to 9 each include a processing chamber 51 and a substrate holding plate 5 2. The processing chamber 51 includes a processing chamber upper portion 5U and a processing chamber lower portion 51b which face each other. The processing chamber upper portion 5 la is configured to be movable up and down, and is a processing chamber. After the upper portion 51a is lowered, the processing chamber upper portion 51a is in contact with the lower portion of the processing chamber to form an airtight processing chamber 51. Further, when the processing chamber upper portion 51a is raised, a gap is formed between the processing chamber upper portion 5U and the processing chamber lower portion 51b. The state between the inside and the outside of the processing chamber 51 is a state in which the substrate 90 can be transported (state of Fig. 17). The substrate holding plate 52 is inside the processing chamber 51 for holding the substrate 90 in a non-contact manner and heating the held substrate 9 to the plate. The substrate holding plate ^ has a flat outer shape and is disposed in the processing chamber 51 in a horizontal manner. The substrate holding plate 52 is formed with a plurality of discharge holes 52 &amp; for discharging nitrogen gas upward, and a plurality of suction holes 52b for sucking the gas on the upper portion. The plurality of ejection holes 52a are formed on the upper surface side of the substrate holding plate 52, and the nozzle openings 5 2 a are formed in a direction orthogonal to the conveying direction of the substrate 9 (y-axis direction). The gas supply pipe 54a is connected to the discharge hole 52a along the conveyance direction of the substrate 9 and the shaft. A nitrogen supply source 54b is connected to the upstream side of the feed gas distribution unit 54a, and an on-off valve 54c is inserted in the middle of the path of the gas supply pipe. Further, the air supply pipe 54 is a plurality of temperature adjustment portions 54d which are individually controlled by the system of the history of the mouth, the other side of the hole, and the outlet hole 52a. Each of the temperature adjusting portions 54d is constructed by adding a heat of 120801.doc -24-200811956 to the nitrogen gas in the gas supply pipe 54a or a water-cooling pipe which is cooled by the nitrogen gas in the general air 1 in the g 54a. In this case, the nitrogen gas is supplied from the respective discharge holes 52a toward the substrate holding plate 52 by opening the opening and closing valve 54c and operating the respective temperatures &amp; P: 5 + 4d. The crucible is ejected, and the nitrogen gas supply source Mb is supplied by the nitrogen gas source, and the temperature adjustment unit 54_ is heated or cooled.曰 On the other hand, a plurality of suction holes 52b are slit-shaped perforations formed on the one side of the substrate holding plate 52. Each of the suction holes 52b is formed in a direction orthogonal to the direction in which the substrate (4) is conveyed, and is arranged along the transport direction (X-axis direction) of the substrate 90. The exhaust pipe is connected to the exhaust pipe 52b, and an exhaust portion 54f for forcibly exhausting by vacuum concentration or the like is connected to the downstream side of the exhaust pipe 54e, and is inserted in the path of the exhaust pipe 54e. The valve 54g is opened and closed. When the opening and closing valve 54g is opened, the gas in the upper portion of the substrate holding plate is sucked toward the suction hole 52b, and is exhausted to the exhaust portion 54f via the exhaust pipe 54e. The substrate 90 is placed on the substrate holding plate 52. When the opening and closing valve 54c and the opening and closing valve 54g are opened, nitrogen gas is blown from the plurality of ejection holes 52a under the substrate 90 while the substrate holding plate 52 and the substrate 9 are folded. The gas system is sucked by a plurality of suction holes 52b. In this way, the buoyancy of the upper side of the substrate 9 and the adsorption force to the substrate holding plate 52 act, so that the substrate 9 is held on the substrate holding plate 52 in a non-contact manner at a certain south. Further, a plurality of ejection holes 52a and a plurality of suction holes 52b are alternately arranged along the X-axis direction. That is, on the substrate holding plate 52, a plurality of ejection holes 52a and a plurality of suction holes 52b are uniformly arranged. Based on this, the buoyancy and the adsorption force of the substrate 90 are uniformly applied in the plane of the substrate 90, 120801.doc -25-200811956, and the substrate 90 is stably maintained on the substrate while maintaining the horizontal posture. Board 5 2 on. Further, a plurality of temperature adjusting portions 52c are attached to the bottom of the substrate holding plate 52, and are formed by a heater that heats the substrate holding plate 52 or a water-cooled tube that cools the substrate holding plate. The plurality of temperature adjustment portions 52c are arranged in the transport direction of the substrate 90, and the output (heating force or cooling force) of each temperature adjustment portion 52c can be discriminated. When the respective temperature adjustment portions 52c are operated based on the cause, the respective positions of the substrate holding plate 52 are individually temperature-controlled. For example, if the temperature adjustment unit 52c is operated at a different output, a temperature gradient in the X-axis direction is formed on the substrate holding plate 52. The substrate 90 held on the substrate holding plate 52 is heated or cooled in accordance with the temperature of the substrate holding plate 52 in its holding position. Further, nitrogen gas heated or cooled by the temperature adjusting portion 54d is blown onto the lower surface of the substrate 90 held by the substrate holding plate 52. For this reason, heat is exchanged between the substrate 90 and the nitrogen gas, and the substrate 9 is heated or cooled. The output of the plurality of temperature adjustment units 54 (| is individually controlled according to the output of the plurality of temperature adjustment units 52c. Based on this, the temperature of the nitrogen gas ejected from each of the ejection holes is also dependent on the temperature maintained on the substrate holding plate 52. The gradient is controlled, and the substrate 9 is heated or cooled according to the temperature. In this manner, the heat treatment portions 5 to 9 include the first temperature adjustment mechanism constituted by the plurality of temperature adjustment units 52c, and The second temperature adjustment mechanism constituted by the plurality of temperature adjustment units 54d. The substrate transfer mechanism 31 is a mechanism for horizontally transporting the substrate 9 from the resist coating processing unit 4 to the heat treatment unit 9. As shown in the figure, the substrate transfer 120801.doc -26- 200811956 The feed mechanism 31 includes the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ a parter, and a pair of moving parts, which are moved along the road section. The track part and the moving part are configured by various known moving mechanisms, but may be constituted by the following mechanism Composition, such as driving the motor A mechanism for converting a lead screw or a conveyor belt into a linear motion or a mechanism using a linear motor. The substrate transport mechanism 31 is moved in the X-axis direction along the rail portion 3a. Moreover, the abutting portion 31c of the end surface for abutting against the substrate 90 is fixed to each of the moving portions 3. Therefore, if the pair of moving portions 311} are moved in the + direction, the abutting is performed. The portion 3 〇 is in contact with the end surface of the substrate 90 held by the substrate holding plates C and 52 of the respective processing portions in a non-contact manner, and the substrate 9 is moved in the +χ direction from the contact portion 31c. The abutting portion 3 1c is rotatable on the moving portion 31b. When the processing chambers 41, 51 are closed, the abutting portion 31c can be swung and retracted to the side of the processing chambers 41, 51 (Fig. In addition to the above configuration, the substrate processing apparatus 3 includes the control unit 32. Fig. 18 shows a block of the connection structure between the respective units and the control unit μ in the substrate processing apparatus! As shown in Fig. 18, the control unit 32 is connected to the processing chamber upper portions 41a and 51a and the opening and closing valves 44x, 44g, 54c, and 5. 4g, the temperature adjustment units 52c and 54d and the substrate transfer mechanism 31 are electrically connected, and these operations are controlled. Further, specifically, the control unit 32 is constituted by a computer including a CPU and a memory. The computer operates in accordance with a program installed in the computer. In this manner, the control operation is performed. When the substrate processing device 3 performs the processing of the substrate 90, first, the substrate 90 of the I20801.doc -27-200811956 is loaded. In the processing chamber 41 of the resist coating processing unit*, the substrate 90 is held in the processing chamber 41 in a non-contact manner on the substrate holding plate 42. The nozzle portion 43 moves the upper portion of the substrate 90 held on the substrate holding plate 42 in the -X direction, and applies a resist liquid on the upper surface of the substrate 9A. In addition, the substrate 90 may be brought into contact with and held on the substrate holding plate 42 at the stage of resist application, and after the resist is applied, nitrogen gas is ejected from the plurality of ejection holes 42a. The substrate 90 is floated. Then, the substrate transfer mechanism 31 moves the substrate 9 in the +χ direction by moving the contact portion 31A against the end surface of the substrate 9A on the side of the substrate 9 by moving in the +x direction. The substrate 90 is carried out from the resist coating processing unit 4, and is slowly transferred to the substrate holding plates 52 of the heat processing units 5 to 9. Each of the substrate holding plates 52 is temperature-controlled by a plurality of temperature adjusting portions 52c, and the nitrogen gas discharged from the plurality of discharge holes 52a is temperature-controlled by a plurality of temperature adjusting portions 54d. Based on this, the substrate 90 is conveyed in the +x direction and the temperature is adjusted on each of the substrate holding plates 52. Fig. 19 is a view showing an example of the temperature distribution of each of the substrate holding plates 52 of the heat treatment portions 5 to 9. In Fig. 19, the horizontal axis indicates the position of the substrate holding plate 52 in the x-axis direction, and the horizontal axis indicates the set temperature. In the example of Fig. 9, in the substrate holding plate 52 of the heat treatment portion 5, a temperature gradient is formed, and the temperature is gradually increased from the normal temperature T0 to the highest temperature. The substrate holding plates 52 of the heat treatment portions 6 and 7 are set to have the highest temperature T1 as a whole. Further, in the substrate holding plate 52 of the heat treatment portion 8, a temperature gradient is formed to gradually decrease the temperature from the highest temperature T1 to the normal temperature T0 in the seven directions, and the substrate holding plate 52 of the heat treatment portion 9 is set to be a normal temperature. . Further, from the base 120801.doc -28- 200811956, the position of each of the plate holding plates 52 in the X-axis direction is the temperature. The nitrogen gas ejected from the exit hole 52a is also set to correspond to the temperature of Fig. 19, and is also distributed according to temperature.

When the substrate 9 is transported in the heat treatment portions 5 to 9 in this manner, first, the substrate (4) is slowly heated in the heat treatment portion 5 from the normal temperature T 〇 to the highest temperature T1 in accordance with the temperature gradient of the substrate holding plate %. Then, the substrate 9 is maintained at the highest temperature during the passage of the heat treatment portions 6 to 7, and the substrate is "on the heat treatment portion 8" in accordance with the temperature gradient "仗 the maximum surface temperature T1 to the normal temperature T". The cooling is performed slowly; during the passage of the heat treatment portion 9, the temperature is maintained at m, and the degree of the substrate 90 does not rise or fall sharply, and the substrate 90 is heat treated in a uniform manner. In order to prevent the rapid temperature rise of the substrate 90, the temperature T2 of the first portion of the heat treatment portion 5 is preferably such that it is normal temperature + 3 generations or less. In order to prevent the temperature of the substrate 90 from dropping, the temperature T3' of the first portion of the heat treatment portion 8 is set to a maximum temperature of τι or more, preferably in the case of the substrate processing apparatus 3, since the heat treatment portion can be prevented. Since the temperature of the substrate 90 changes rapidly, the substrate 90 is not completely dried even after the application of the anti-(four) coating. When the heat treatment is performed, an unevenness is not generated in the surface state of the substrate %. Therefore, the vacuum drying treatment after the application of the anti-(4) coating can be omitted, and the structure of the substrate processing apparatus 3 can be simplified. Further, in the substrate processing apparatus 3 of the present embodiment, as in the substrate processing apparatus of the second embodiment and the substrate processing apparatus 2 of the second embodiment, the substrate holding plate 52 is shielded from the substrate 90 by the non-contact type. In the case where the substrate 9 is smashed to 120801.doc -29-200811956, the same day, the heat treatment or the cooling treatment is performed. Based on this, the damage and pollution of the components such as the support pins are prevented from being underneath/ Further, the substrate 90 is not covered by the support pin or the like, and the heat treatment is partially uneven, and the A) spoon phenomenon. Further, since the substrate 90 is heated and processed by the substrate 90, the substrate 90 is The flow of the gas on the lower side: ...&quot; and: uniform heat treatment is performed on the surface of the substrate 90. α, the discharge hole 52a of the shell and the suction hole 52b are directed to the substrate 90. The direction of the orthogonal direction is formed into a slit shape. Therefore, the gas and the L motion on the substrate holding plate 12 are uniform in terms of the direction in which the transport direction of the 9 〇 is orthogonal to the direction of the length of the substrate. Therefore, the substrate 9〇 In the direction of transport and orthogonal to the direction of transport The direction of the direction is uniformly heated, and the entire surface of the substrate 90 is uniformly heated. <5. Modification of the third embodiment> The substrate transfer mechanism 3 of the third type The mechanism for imparting the thrust of the substrate 9 from the rear side in the transport direction of the substrate 90 is not limited to the above-described mechanism. For example, the left and right (+y side and y side) of the substrate 9G are held. The mechanism for transporting the substrate 90 in the z-axis direction at the same time may be a mechanism for pulling the substrate 90 from the front side in the transport direction of the substrate 90. Further, the substrate transfer mechanism 13 is only for the substrate 9 The carrier is transported in one direction (+ 乂 direction), but the substrate transport mechanism in the present invention may be transported in a direction in which the substrate is transported in two or more directions. For example, the rocking mechanism of FIG. 1 is applied to the substrate processing apparatus. 3. In the case where the temperature of the substrate holding plate 52 is constant, the substrate 90 may be alternately conveyed in the +x direction and the _χ direction. I20801.doc -30- 200811956 In this way, since the transport space of the substrate 9A can be narrowed, the area occupied by the substrate processing apparatus 3 can be reduced.

Further, in the substrate processing apparatus 3, the slit widths of the ejection holes 52 &amp; and the suction holes 52b are constant, but the slit widths may be adjusted in accordance with the processing conditions of the substrate 9A. For example, the slit width adjusting plate 22c as shown in FIGS. n and 12 or the slit width adjusting plate 22d as shown in FIGS. 13 and 14 is used to adjust the discharge holes 52a and the suction holes. The slit width of 52b is also available. Moreover, the discharge hole 52a and the suction hole 52b are the first! The dot-shaped perforation similar to the ejection hole 12a and the suction hole 12b of the embodiment may be employed. Further, the substrate processing apparatus 3 includes a second temperature adjustment mechanism including a plurality of temperature adjustment units 52c and a second temperature adjustment mechanism constructed by a plurality of temperature adjustment units, but includes only such a temperature adjustment unit. Any of the temperature adjustment mechanisms is also available. However, by using these two kinds of temperature adjustment mechanisms, the substrate 9q on the substrate holding plate 52 can be more uniformly cooled/r/r, that is, in the above example, the heat treatment portions 5 to 9 For example, the setting temperature of the substrate holding plate 52 is as shown in Fig. 18. However, the set temperature of the substrate holding plate 52 is not limited to the example of Fig. 18. For example, a temperature gradient ′ is not formed in the i substrate holding plates 52, and a difference in temperature may be imparted to each of the substrate holding plates in accordance with the money processing unit. In the above-described example, the resist coating treatment unit 4 is disposed on the upstream side of the transfer direction of the substrate in the transfer direction with respect to the heat treatment portions 5 to 9. However, the coating treatment portion is disposed instead of the anti-resistance. It is also possible to apply the remaining agent to the treatment unit 4, and the coating treatment unit applies the other treatment liquid to the upper surface of the substrate. 120801.doc 200811956 The substrate processing apparatus 3 is a device for processing a glass substrate for a liquid crystal display device, but the substrate processing device of the present invention is a substrate for processing other substrates such as a conductor wafer or a PDP glass substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a substrate processing apparatus in a first embodiment. Fig. 2 is a longitudinal sectional view showing a substrate processing apparatus in the first embodiment. Figure 3 shows the first! A block diagram of the connection structure between the control unit and each part in the implementation mode. Fig. 4 is a view showing the state of processing of the substrate in the first embodiment. Fig. 5 is a view showing a state of processing of a substrate in a substrate processing apparatus. Fig. 6 is a view showing a state of processing of a substrate in a substrate processing apparatus. Fig. 7 is a view showing a state of processing of a substrate in a substrate processing apparatus. Fig. 8 is a plan view showing a substrate processing apparatus in a second embodiment. Fig. 9 is a longitudinal sectional view showing a substrate processing apparatus in a second embodiment. The drawing is a plan view of a substrate processing apparatus including a rocking mechanism. Fig. 11 is a top view of the slit width adjusting plate. Fig. 12 is a longitudinal sectional view showing a slit width adjusting plate. Fig. 13 is a top view of the slit width adjusting plate. Fig. 14 is a longitudinal sectional view showing a slit width adjusting plate. Fig. 15 is a plan view showing a substrate processing apparatus in a third embodiment. Fig. 16 is a longitudinal sectional view of the anti-money agent coating treatment portion in the third embodiment. Fig. 0 is a longitudinal sectional view showing a heat treatment portion in the third embodiment. 120801.doc -32- 200811956 Fig. 18 is a block diagram showing the connection structure between the 栌 &lt; L system 4 and each part in the third embodiment. '° Fig. 19 is a view showing an example of the temperature distribution of the heat treatment portion in the third embodiment.

Figure 20 is a view showing the structure of a prior substrate processing apparatus. [Description of main component symbols] 1, 2, 3 Substrate processing apparatus 4 Anti-surname application processing section 5 to 9 Heat treatment section 10 Substrate holding plates 11, 41, 51 Processing chambers 12, 22, 42 and 52 Substrate holding plate 12a ' 22a ^ 42a ' 52a ejection hole 12b &gt; 22b &gt; 42b - 52b suction hole 12c heater 13 ^ 31 substrate conveying mechanism 13a, 31a obstruction portion 13b, 31b moving portion 13c - 31c abutting portion 14d heater 15 32 control unit 16 rocking mechanism 22c slit width adjusting plate 22d slit width adjusting plate 120801.doc -33- 200811956 52c temperature adjusting portion 54d temperature adjusting portion 90 substrate I20801.doc -34-

Claims (1)

200811956 X. Patent Application Scope 1. A substrate processing apparatus characterized in that it is a heat treatment for a substrate; and includes: a substrate holding plate which is formed from a hard number of mouths formed on the top The exit hole ejects a rolling body, whereby the substrate is held in a non-contact manner on the upper surface; the s degree adjusting mechanism 'maintains the substrate in a non-contact manner on the substrate above the substrate-holding plate for temperature adjustment , and the material mechanism, which is based on the above-mentioned substrate holding plate (10), and A, +, L *7» J^m / mouth just mentioned above. The substrate processing apparatus of claim 1, wherein the plurality of suction holes for sucking the gas above are formed on the front surface of the substrate holding plate. The substrate processing apparatus according to claim 2, wherein the plurality of ejection holes and the plurality of suction holes are dot-like perforations arranged in a lattice shape on the front surface of the substrate holding plate. 4. The substrate processing apparatus according to claim 2, wherein the plurality of ejection holes and the plurality of suction holes are formed on the substrate: the upper surface of the holding plate is formed in a direction opposite to a direction in which the conveying mechanism is transported Slit-like perforations. The substrate processing apparatus according to claim 4, wherein (1) the plurality of ejection holes and the plurality of suction holes are arranged alternately on the upper surface of the substrate holding plate along the conveying direction of the conveying mechanism. 6. The substrate processing apparatus of claim 4, further comprising: 120801.doc 200811956 a slit width adjusting mechanism for adjusting a slit width of said plurality of plurality of suction holes. The substrate processing apparatus of claim 1, wherein the transport mechanism includes: a contact portion that abuts the substrate from the transport side; and the moving portion that causes the abutting portion to Move the direction to move the person. A rice processing apparatus according to claim 1, wherein the conveying means includes a rocking mechanism for shaking the substrate. 9. The substrate processing apparatus according to claim 1, wherein the temperature adjustment mechanism comprises: a mechanism of 5 weeks, and a thermal radiation between the substrate holding plate and the substrate. The substrate is subjected to a strict adjustment; the second temperature adjustment mechanism has a gas which is ejected from the ejection orifice of the tray, and a heat exchange temperature between the κ body and the substrate. The substrate processing device of claim 9, wherein the substrate is contained in the tray. The substrate holding plate is provided along the conveying mechanism. The temperature adjusting mechanism is a plurality of the substrate holding plates. The substrate processing apparatus according to claim 10, wherein the first temperature adjusting unit adjusts the temperature of each of the plurality of substrate holding plates in each of the regions. 12. The substrate processing apparatus of the present invention, wherein the second temperature adjustment is in accordance with the respective regions of the substrate holding plate 120801.doc 200811956 =::: tune = from formation, domain, Holes - 】 3 · as requested! The substrate processing apparatus according to any one of the preceding claims, wherein the additional packaging/clothing processing unit is configured to apply a processing liquid to the upper surface of the substrate with respect to the substrate holding plate on the upstream side in the conveying direction of the conveying mechanism. 120801.doc