JP2008016543A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which prevents a lower surface of a substrate from getting contaminated and damaged, and uniformly heat treats a plane of the substrate. <P>SOLUTION: The substrate processing apparatus 1 holds the substrate 90 without contact on a substrate holding plate 12, and performs heat treatment while moving the substrate 90 in one direction. Thus, a member such as a supporting pin does not come into contact with the lower surface of the substrate 90, to prevent the substrate 90 from getting damaged or contaminated. The heat treatment is not partially nonuniform due to the member such as the supporting pin. Since the heat treatment takes place while the substrate 90 is being carried, the plane of the substrate 90 is uniformly heat-treated irrespective of a gas flow on the lower surface of the substrate 90. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for performing heat treatment on a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a PDP, or the like.

  Conventionally, in the substrate manufacturing process, a process of applying a resist solution to the surface of the substrate is performed, and then a heat treatment (heating process and cooling process) is performed to improve the adhesion between the substrate surface and the resist. . A conventional substrate processing apparatus that performs heat treatment places a substrate on a substrate holding plate disposed in a chamber, and heats or cools the substrate.

  As shown in FIG. 20, the conventional substrate processing apparatus 100 has a plurality of support pins 102 such as proximity pins on a substrate holding plate 101, and a substrate 109 is placed on these support pins 102. The substrate 109 is heated or cooled. The configuration of such a conventional substrate processing apparatus is disclosed in Patent Document 1, for example.

Japanese Patent Laid-Open No. 11-283909

  However, in the conventional substrate processing apparatus, since the support pins are partially in contact with the lower surface of the substrate, the lower surface of the substrate may be contaminated or damaged by the support pins. In addition, since the substrate is heat-treated with the support pins partially in contact with the lower surface of the substrate, there is a fear that the state of the heat treatment is not uniform within the surface of the substrate. In particular, in recent years, a substrate to be processed has a tendency to increase in size, and thus it is necessary to hold one substrate with a large number of support pins. Under such circumstances, the above problem has become more prominent.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate processing apparatus capable of preventing the contamination and damage of the lower surface of the substrate and uniformly heat-treating the surface of the substrate. .

  In order to solve the above-mentioned problem, an invention according to claim 1 is a substrate processing apparatus for performing a heat treatment on a substrate, and the substrate is placed on the upper surface by discharging a gas from a plurality of discharge holes formed on the upper surface. A substrate holding plate that is held in a non-contact manner, temperature control means for temperature-controlling the substrate held in a non-contact manner on the upper surface of the substrate holding plate, and a substrate that is held in a non-contact manner on the upper surface of the substrate holding plate. Transporting means for transporting along the upper surface.

  The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein a plurality of suction holes for sucking an upper gas are formed in the upper surface of the substrate holding plate. To do.

  The invention according to claim 3 is the substrate processing apparatus according to claim 1 or 2, wherein the plurality of discharge holes and the plurality of suction holes are arranged in a lattice pattern on the upper surface of the substrate holding plate. It is characterized by being a spot-like perforated hole.

  A fourth aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the plurality of discharge holes and the plurality of suction holes are formed on the upper surface of the substrate holding plate. It is characterized by slit-shaped perforations formed in a direction orthogonal to the transport direction.

  The invention according to claim 5 is the substrate processing apparatus according to claim 4, wherein the plurality of ejection holes and the plurality of suction holes are along the transport direction of the transport means on the upper surface of the substrate holding plate. It is characterized by being alternately arranged.

  The invention according to claim 6 is the substrate processing apparatus according to claim 4 or 5, further comprising slit width adjusting means for adjusting the slit width of the plurality of ejection holes or the plurality of suction holes. It is characterized by.

  The invention according to claim 7 is the substrate processing apparatus according to any one of claims 1 to 6, wherein the transfer means includes a contact portion that contacts the substrate from the rear side in the transfer direction; And a moving part that moves the contact part in the transport direction.

  An invention according to an eighth aspect is the substrate processing apparatus according to any one of the first to seventh aspects, wherein the transfer means includes a swinging means for swinging the substrate.

  The invention according to a ninth aspect is the substrate processing apparatus according to any one of the first to eighth aspects, wherein the temperature adjusting means is a substrate by radiation of heat between the substrate holding plate and the substrate. And a second temperature adjusting means for adjusting the temperature of the substrate by heat exchange between the gas discharged from the plurality of discharge holes and the substrate. .

  The invention according to claim 10 is the substrate processing apparatus according to claim 9, comprising a plurality of the substrate holding plates arranged along the transport direction of the transport means, wherein the first temperature control means is The temperature of each of the plurality of substrate holding plates is individually controlled.

  The invention according to an eleventh aspect is the substrate processing apparatus according to the tenth aspect, wherein the first temperature adjusting means adjusts the temperature of each of the plurality of substrate holding plates individually for each region. And

  The invention according to a twelfth aspect is the substrate processing apparatus according to the eleventh aspect, wherein the second temperature adjusting means is a discharge formed in the region according to the temperature of each region of the substrate holding plate. The temperature of the gas discharged from the hole is controlled.

  A thirteenth aspect of the present invention is the substrate processing apparatus according to any one of the first to twelfth aspects, wherein the substrate holding plate is disposed upstream of the transport unit in the transport direction with respect to the substrate holding plate. It is further characterized by further comprising a coating processing unit that applies the processing liquid.

  According to the invention described in claims 1 to 13, the substrate holding plate that holds the substrate in a non-contact manner by discharging gas from the plurality of discharge holes formed in the upper surface, and the upper surface of the substrate holding plate is non-contacted. Temperature control means for controlling the temperature of the substrate held in contact; and transport means for transporting the substrate held in a non-contact manner on the upper surface of the substrate holding plate along the upper surface. For this reason, members such as support pins do not come into contact with the lower surface of the substrate, and damage and contamination of the substrate are prevented. Further, the heat treatment does not become partially uneven by a member such as a support pin. Further, since the heat treatment is performed while the substrate is being conveyed, the in-plane surface of the substrate can be uniformly heat-treated regardless of the gas flow on the lower surface side of the substrate.

  In particular, according to the second aspect of the present invention, a plurality of suction holes for sucking the upper gas are formed on the upper surface of the substrate holding plate. Therefore, upward buoyancy and adsorption force to the substrate holding plate act on the substrate, and the substrate is stably held at a constant height on the substrate holding plate.

  In particular, according to the invention described in claim 3, the plurality of ejection holes and the plurality of suction holes are spot-shaped perforations arranged in a lattice pattern on the upper surface of the substrate holding plate. Therefore, the plurality of ejection holes and the plurality of suction holes are all arranged uniformly on the substrate holding plate, and the substrate is stably held on the substrate holding plate while maintaining a horizontal posture.

  In particular, according to the invention described in claim 4, the plurality of discharge holes and the plurality of suction holes are slit-shaped perforations formed in the direction perpendicular to the transport direction of the transport means on the upper surface of the substrate holding plate. For this reason, the gas flow on the substrate holding plate is uniform in the direction orthogonal to the substrate transport direction. Therefore, the substrate is heated uniformly in both the transport direction and the direction orthogonal to the transport direction, and the entire in-plane surface of the substrate is heated extremely uniformly.

  In particular, according to the fifth aspect of the present invention, the plurality of ejection holes and the plurality of suction holes are alternately arranged along the transport direction of the transport means on the upper surface of the substrate holding plate. Therefore, the plurality of ejection holes and the plurality of suction holes are all arranged uniformly on the substrate holding plate, and the substrate is stably held on the substrate holding plate while maintaining a horizontal posture.

  In particular, according to the invention described in claim 6, the substrate processing apparatus further includes slit width adjusting means for adjusting the slit width of the plurality of ejection holes or the plurality of suction holes. For this reason, the amount of gas discharged from the plurality of discharge holes or the amount of gas sucked into the plurality of suction holes can be arbitrarily adjusted.

  In particular, according to the seventh aspect of the present invention, the transport means has a contact portion that contacts the substrate from the rear side in the transport direction and a moving portion that moves the contact portion in the transport direction. For this reason, a board | substrate can be conveyed simply and stably.

  In particular, according to the invention described in claim 8, the transport means has the swinging means for swinging the substrate. For this reason, even if it is a narrow space, it can heat-process, conveying a board | substrate. Therefore, the area occupied by the substrate processing apparatus can be reduced.

  In particular, according to the ninth aspect of the present invention, the temperature adjustment means includes a first temperature adjustment means for adjusting the temperature of the substrate by radiation of heat between the substrate holding plate and the substrate, and discharge from a plurality of discharge holes. And a second temperature adjusting means for adjusting the temperature of the substrate by heat exchange between the gas to be performed and the substrate. For this reason, the in-plane surface of the substrate can be heat-treated more uniformly.

  In particular, according to the invention described in claim 10, the substrate processing apparatus includes a plurality of substrate holding plates arranged along the transfer direction of the transfer means, and the first temperature adjusting means includes the plurality of substrate holding plates. Adjust the temperature individually. For this reason, it is possible to heat-treat the substrate while continuously transporting the substrate by the transport means. In addition, since a rapid temperature change of the substrate can be prevented, the substrate can be heat-treated without unevenness.

  In particular, according to the invention described in claim 11, the first temperature adjusting means adjusts the temperature of each of the plurality of substrate holding plates individually for each region. For this reason, the temperature of the substrate can be changed more gently.

  In particular, according to the twelfth aspect of the present invention, the second temperature adjusting means adjusts the temperature of the gas discharged from the discharge holes formed in the region according to the temperature of each region of the substrate holding plate. . For this reason, the substrate on the substrate holding plate can be heat-treated more uniformly.

  In particular, according to the invention described in claim 13, the substrate processing apparatus further includes a coating processing unit that applies the processing liquid to the upper surface of the substrate on the upstream side in the transport direction of the transport unit with respect to the substrate holding plate. For this reason, a process liquid is apply | coated to the upper surface of a board | substrate, and the subsequent board | substrate can be heat-processed uniformly. Therefore, the drying process after application of the treatment liquid can be omitted, and the configuration of the substrate processing apparatus can be simplified.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

<1. First Embodiment>
FIG. 1 is a plan view showing the configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention. FIG. 2 is a longitudinal sectional view when the substrate processing apparatus 1 of FIG. 1 is cut along the line II-II. FIG. 2 also shows the configuration of an air supply / exhaust system for the substrate processing apparatus 1. In addition, in order to show clearly the positional relationship of each site | part, FIG.1, FIG.2 and each following figure are attached | subjected xyz orthogonal coordinate system.

  The substrate processing apparatus 1 performs heat treatment on a substrate 90 after resist application in a photolithography process in which a surface of a rectangular glass substrate (hereinafter simply referred to as “substrate”) 90 for a liquid crystal display device is selectively etched. It is a device. As shown in FIGS. 1 and 2, the substrate processing apparatus 1 mainly includes a chamber 11, a substrate holding plate 12, and a substrate transport mechanism 13.

  The chamber 11 is a housing having a space for performing heat treatment on the substrate 90 inside. The substrate holding plate 12 and the substrate transport mechanism 13 are accommodated in the chamber 11. In addition, a part of the side surface of the chamber 11 is provided with a carry-in / out entrance 11 a for carrying the substrate 90 in and out of the chamber 11 and an open / close door 11 b for opening and closing the carry-in / out entrance 11 a. When the substrate 90 is carried into the chamber 11 and when the substrate 90 is carried out of the chamber 11, the opening / closing door 11b is opened, and the substrate 90 is conveyed through the carry-in / out port 11a. In addition, when the substrate 90 is heated in the chamber 11, the open / close door 11 b is closed, and the inside of the chamber 11 is airtight.

  The substrate holding plate 12 is a plate for holding the substrate 90 in a non-contact manner on the upper surface and heating the held substrate 90. The substrate holding plate 12 has a flat outer shape and is installed in the chamber 11 in a horizontal posture. The substrate holding plate 12 is formed with a plurality of discharge holes 12a for discharging nitrogen gas upward and a plurality of suction holes 12b for sucking the gas above the plate.

  The plurality of ejection holes 12a are perforations that vertically penetrate the substrate holding plate 12, and are formed in spots (spots) in a top view. Each discharge hole 12 a is connected to an air supply pipe 14 a on the lower surface side of the substrate holding plate 12. A nitrogen gas supply source 14b is connected to the upstream side of the air supply pipe 14a, and an opening / closing valve 14c and a heater 14d are interposed in the middle of the path of the air supply pipe 14a. Therefore, when the on-off valve 14c is opened and the heater 14d is operated, nitrogen gas is supplied from the nitrogen gas supply source 14b, and the nitrogen gas heated by the heater 14d is directed from the discharge hole 12a to the upper portion of the substrate holding plate 12. Discharged.

  On the other hand, the plurality of suction holes 12b are perforations that vertically penetrate the substrate holding plate 12, and are formed in spots (spots) in a top view. Each suction hole 12 b is connected to the exhaust pipe 14 e on the lower surface side of the substrate holding plate 12. An exhaust section 14f that performs forced exhaust by a vacuum pump or the like is connected to the downstream side of the exhaust pipe 14e, and an on-off valve 14g is inserted in the middle of the path of the exhaust pipe 14e. For this reason, when the on-off valve 14g is opened, the gas above the substrate holding plate 12 is sucked into the suction hole 12b and exhausted to the exhaust part 14f via the exhaust pipe 14e.

  When the substrate 90 is placed on the substrate holding plate 12 and the on-off valve 14c and the on-off valve 14g are opened, nitrogen gas is blown from the plurality of discharge holes 12a to the lower surface of the substrate 90, and the substrate holding plate 12 and the substrate The gas between 90 is sucked into the plurality of suction holes 12b. As a result, upward buoyancy and adsorption force to the substrate holding plate 12 act on the substrate 90, and the substrate 90 is held on the substrate holding plate 12 in a non-contact manner at a certain height.

  The plurality of discharge holes 12a and the plurality of suction holes 12b are alternately arranged in a lattice shape in a top view as shown in FIG. That is, on the substrate holding plate 12, the plurality of ejection holes 12a and the plurality of suction holes 12b are all arranged uniformly. For this reason, both the buoyancy and the adsorption force with respect to the substrate 90 act uniformly on the surface of the substrate 90, and the substrate 90 is stably held on the substrate holding plate 12 while maintaining a horizontal posture.

  A heater 12 c is embedded in the substrate holding plate 12. When the heater 12c is operated, the substrate holding plate 12 is heated to a predetermined temperature. For this reason, the substrate 90 held on the substrate holding plate 12 is heated by receiving radiant heat from the substrate holding plate 12. Further, nitrogen gas heated by the heater 14d and discharged from the plurality of discharge holes 12a is blown onto the lower surface of the substrate 90 held on the substrate holding plate 12. For this reason, the substrate 90 is heated by receiving heat from the nitrogen gas. That is, the substrate processing apparatus 1 includes a first heating unit that applies heat generated from the heater 12c to the substrate 90 via the substrate holding plate 12, and nitrogen that discharges heat generated from the heater 14d from the plurality of discharge holes 12a. And a second heating means for giving the substrate 90 through gas.

  The substrate transport mechanism 13 is a mechanism for transporting the substrate 90 held in a non-contact manner on the substrate holding plate 12. The substrate transport mechanism 13 includes a pair of rail portions 13a laid along the substrate holding plate 12 on the left and right sides (+ y side and -y side) of the substrate holding plate 12, and a pair of moving portions that move along the rail portion 13a. 13b. The rail portion 13a and the moving portion 13b can be configured by various known moving mechanisms. For example, a mechanism that converts the rotational drive of the motor into a linear motion via a ball screw or a conveyor belt, or a linear motor is used. It can be constituted by the mechanism which was.

  When the substrate transport mechanism 13 is operated, the pair of moving parts 13b translate in the x-axis direction along the rail part 13a. Each moving portion 13b is fixed with a contact portion 13c for contacting the end surface of the substrate 90 on the −x side. Therefore, when the pair of moving parts 13b are moved in the + x direction, the contact part 13c comes into contact with the end surface of the substrate 90 held in non-contact on the substrate holding plate 12, and the substrate 90 together with the contact part 13c becomes + x Move in the direction.

  Moreover, this substrate processing apparatus 1 is provided with the control part 15 in addition to said structure. FIG. 3 is a block diagram illustrating a connection configuration between the above-described units in the substrate processing apparatus 1 and the control unit 15. As shown in FIG. 3, the control unit 15 is electrically connected to the open / close door 11b, the substrate transport mechanism 13, the open / close valves 14c and 14g, and the heaters 12c and 14d, and controls these operations. In addition, the control part 15 is specifically comprised by the computer which has CPU and memory, and performs said control operation | movement, when a computer operate | moves according to the program installed in the computer.

  4 to 7 are views showing the state of processing at each stage when the substrate 90 is processed in the substrate processing apparatus 1 described above. The processing flow of the substrate processing apparatus 1 will be described below with reference to FIGS.

  When the resist-coated substrate 90 is transported by a predetermined transport robot R, first, the substrate processing apparatus 1 opens the opening / closing door 11b and transports the substrate 90 into the chamber 11 via the transport port 11a ( The state of FIG. On the substrate holding plate 12 in the chamber 11, discharge of nitrogen gas from the plurality of discharge holes 12a and suction of gas into the plurality of suction holes 12b are started. In addition, the pair of moving units 13 b stands by at the movement start position on the innermost side (−x side) of the chamber 11. The substrate 90 carried into the chamber 11 is placed in a non-contact manner before the moving unit 13b on the substrate holding plate 12.

  When the substrate 90 is placed on the substrate holding plate 12, the transfer robot R retracts to the outside of the chamber 11, and the open / close door 11b is closed (state shown in FIG. 5). Thereafter, the pair of moving portions 13b (see FIG. 1) slowly move in the + x direction along the rail portions 13a (see FIG. 1). Thereby, the contact part 13c contacts the end surface on the −x side of the substrate 90, and the substrate 90 is slowly transported in the + x direction (state shown in FIG. 6). The substrate 90 is heated while receiving the radiant heat from the substrate holding plate 12 and the nitrogen gas from the plurality of discharge holes 12 a while being transported on the substrate holding plate 12.

  When the heating process for a predetermined time is completed and the substrate 90 is transported to the transport end position, the substrate processing apparatus 1 opens the opening / closing door 11b and unloads the substrate 90 to the outside of the chamber 11 by the transport robot R (see FIG. 7 state). Here, since the substrate 90 is held on the substrate holding plate 12 in a non-contact manner, the substrate 90 is not peeled off when the substrate 90 is pulled away from the substrate holding plate 12. Therefore, particles do not adhere to the surface of the substrate 90 due to electrostatic action.

  As described above, the substrate processing apparatus 1 of this embodiment holds the substrate 90 on the substrate holding plate 12 in a non-contact manner, and performs the heat treatment while moving the substrate 90 in one direction. For this reason, members such as support pins do not come into contact with the lower surface of the substrate 90, and damage and contamination of the substrate 90 are prevented. Further, the heat treatment does not become partially uneven by a member such as a support pin. Further, since the heat treatment is performed while the substrate 90 is being transported, the in-plane surface of the substrate 90 can be uniformly heat-treated regardless of the gas flow on the lower surface side of the substrate 90.

<2. Second Embodiment>
FIG. 8 is a plan view showing the configuration of the substrate processing apparatus 2 according to the second embodiment of the present invention. FIG. 9 is a longitudinal sectional view of the substrate processing apparatus 2 of FIG. 8 taken along the line IX-IX. The substrate processing apparatus 2 has the same configuration as the substrate processing apparatus 1 of the first embodiment except for the discharge holes and suction holes formed in the substrate holding plate 12. For this reason, portions common to the substrate processing apparatus 1 of the first embodiment are denoted by the same reference numerals as those in FIGS. 1 and 2 in FIGS.

  The substrate holding plate 22 of the substrate processing apparatus 2 is formed with a plurality of discharge holes 22a for discharging nitrogen gas upward and a plurality of suction holes 22b for sucking gas above the plate. . The plurality of ejection holes 22 a are slit-shaped perforations formed on the upper surface side of the substrate holding plate 12. Each discharge hole 22a is formed in a direction (y-axis direction) perpendicular to the transport direction of the substrate 90, and is arranged along the transport direction (x-axis direction) of the substrate 90. As with the substrate processing apparatus 1 of the first embodiment, an air supply pipe 14a is connected to each discharge hole 22a. A nitrogen gas supply source 14b is connected to the upstream side of the air supply pipe 14a, and an opening / closing valve 14c and a heater 14d are interposed in the middle of the path of the air supply pipe 14a. Therefore, when the on-off valve 14c is opened and the heater 14d is operated, nitrogen gas is supplied from the nitrogen gas supply source 14b, and the nitrogen gas heated by the heater 14d is directed from the discharge hole 22a toward the upper portion of the substrate holding plate 12. Discharged.

  On the other hand, the plurality of suction holes 22 b are slit-shaped perforations formed on the upper surface side of the substrate holding plate 12. Each suction hole 22b is formed in a direction (y-axis direction) orthogonal to the transport direction of the substrate 90, and is arranged along the transport direction (x-axis direction) of the substrate 90. As with the substrate processing apparatus 1 of the first embodiment, an exhaust pipe 14e is connected to each suction hole 22b. An exhaust section 14f that performs forced exhaust by a vacuum pump or the like is connected to the downstream side of the exhaust pipe 14e, and an on-off valve 14g is inserted in the middle of the path of the exhaust pipe 14e. For this reason, when the on-off valve 14g is opened, the gas above the substrate holding plate 12 is sucked into the suction hole 22b and exhausted to the exhaust part 14f via the exhaust pipe 14e.

  When the substrate 90 is placed on the substrate holding plate 12 and the on-off valve 14c and the on-off valve 14g are opened, nitrogen gas is blown from the plurality of discharge holes 22a to the lower surface of the substrate 90, and the substrate holding plate 12 and the substrate The gas between 90 is sucked into the plurality of suction holes 22b. As a result, upward buoyancy and adsorption force to the substrate holding plate 12 act on the substrate 90, and the substrate 90 is held on the substrate holding plate 12 in a non-contact manner at a certain height.

  Further, as shown in FIG. 1, the plurality of discharge holes 22a and the plurality of suction holes 22b are alternately arranged along the x-axis direction. That is, on the substrate holding plate 12, the plurality of discharge holes 22a and the plurality of suction holes 22b are all arranged uniformly. For this reason, both the buoyancy and the adsorption force with respect to the substrate 90 act uniformly in the plane of the substrate 90, and the substrate 90 is stably held on the substrate holding plate 12 while maintaining a horizontal posture.

  When heat treatment is performed on the substrate 90 in the substrate processing apparatus 2, the processing is performed in the same procedure as that of the first embodiment shown in FIGS. 4 to 7. That is, the substrate processing apparatus 2 carries the substrate 90 into the chamber 11 via the carry-in / out port 11a (see FIG. 4), and holds the substrate 90 on the substrate holding plate 12 in a non-contact manner (see FIG. 5). Then, the substrate 90 is heated while being conveyed in the + x direction by the contact portion 13c (see FIG. 6), and the substrate 90 is again carried out of the chamber 11 through the carry-in / out port 11a (see FIG. 7).

  The substrate processing apparatus 2 of the present embodiment also holds the substrate 90 on the substrate holding plate 12 in a non-contact manner, and performs the heat treatment while moving the substrate 90 in one direction. For this reason, members such as support pins do not come into contact with the lower surface of the substrate 90, and damage and contamination of the substrate 90 are prevented. Further, the heat treatment does not become partially uneven by a member such as a support pin. Further, since the heat treatment is performed while the substrate 90 is being transported, the in-plane surface of the substrate 90 can be uniformly heat-treated regardless of the gas flow on the lower surface side of the substrate 90.

  Furthermore, the discharge holes 22a and the suction holes 22b of the present embodiment are formed in a slit shape in a direction orthogonal to the transport direction of the substrate 90. For this reason, the gas flow on the substrate holding plate 12 is uniform in the direction orthogonal to the transport direction of the substrate 90. Therefore, the substrate 90 is uniformly heated in both the transport direction and the direction orthogonal to the transport direction, and the entire in-plane surface of the substrate 90 is extremely uniformly heated.

<3. Modification of First Embodiment and Second Embodiment>
Although the substrate processing apparatuses 1 and 2 are apparatuses for heating the substrate 90, the substrate processing apparatus of the present invention may be an apparatus for cooling the substrate 90. When the substrate 90 is cooled, the heaters 12c and 14d of the substrate processing apparatuses 1 and 2 may be replaced with cooling mechanisms. The cooling mechanism can be realized by various known mechanisms. For example, the nitrogen gas in the substrate holding plate 12 or the air supply pipe 14a may be cooled by a water cooling pipe through which cooling water passes.

  Moreover, although the said board | substrate conveyance mechanism 13 was a mechanism which gives a thrust to the board | substrate 90 from the conveyance direction back side of the board | substrate 90, the board | substrate conveyance means in this invention is not limited to said mechanism. For example, a mechanism that transports the substrate 90 in the x-axis direction while sandwiching the substrate 90 from the left and right (+ y side and −y side) of the substrate 90, or a mechanism that pulls the substrate 90 from the front side of the substrate 90 in the transport direction. It may be.

  The substrate transport mechanism 13 transports the substrate 90 only in one direction (+ x direction). However, the substrate transport means in the present invention transports the substrate 90 in two or more directions. May be. For example, as shown in FIG. 10, the swing mechanism 16 may alternately transport the substrate 90 in the + x direction and the −x direction. 8 includes a first moving part 16b provided on the −x side of the substrate 90 and a second moving part 16d provided on the + x side of the substrate 90. The first moving portion 16b and the second moving portion 16d move in the x-axis direction along the rail portion 16a laid along the side portion of the substrate holding plate 12, and a substrate 90 is disposed above each moving portion. Abutting portions 16c and 16e are provided to abut against the end surfaces. The swing mechanism 16 moves the first moving unit 16b and the second moving unit 16d alternately in the + x direction and the −x direction, thereby moving the substrate 90 in the + x direction and the −x direction by the contact portions 16c and 16e. Carries alternately in the direction. In this way, the substrate 90 can be heated while being transported even in a narrow space. Therefore, the area occupied by the substrate processing apparatus 1 (or 2) can be reduced.

  In the substrate processing apparatus 2 described above, the slit widths of the discharge holes 22a and the suction holes 22b are constant. However, the slit widths may be adjusted according to the processing conditions of the substrate 90. For example, as shown in FIGS. 11 and 12, a pair of slit width adjusting plates 22c may be attached to the upper part of the discharge hole 22a. The pair of slit width adjustment plates 22c are attached to the upper surface of the substrate holding plate 12 along the discharge holes 22a, and the attachment positions can be adjusted in the width direction of the discharge holes 22a. If it does in this way, the slit width of discharge hole 22a can be adjusted by adjusting the attachment position of each plate 22c for slit width adjustment. A similar slit width adjusting plate 22c may be attached to the upper portion of the suction hole 22b.

  Alternatively, as shown in FIGS. 13 and 14, a single slit width adjusting plate 22 d through which a slit SL having a predetermined width is formed may be attached to the upper portion of the discharge hole 22 a. The slit width adjusting plate 22 d is attached to the upper part of the discharge hole 22 a of the substrate holding plate 12. If a plurality of slit width adjustment plates 22d having different slit SL widths are prepared, the slit width of the discharge holes 22a can be adjusted by replacing the slit width adjustment plates 22d on the discharge holes 22a. A similar slit width adjusting plate 22d may be attached to the upper portion of the suction hole 22b.

  The substrate processing apparatuses 1 and 2 include a first heating unit that applies heat from the heater 12c to the substrate 90 through the substrate holding plate 12, and heat from the heater 14d to the substrate 90 through nitrogen gas. However, only one of these heating means may be used. However, if these two heating means are used, the substrate 90 on the substrate holding plate 12 can be heated more uniformly.

  The substrate processing apparatuses 1 and 2 are apparatuses that perform processing on a rectangular glass substrate for a liquid crystal display device. However, the substrate processing apparatus of the present invention is not limited to a semiconductor wafer or a glass substrate for PDP. The substrate to be processed may be used.

<4. Third Embodiment>
FIG. 15 is a plan view showing the configuration of the substrate processing apparatus 3 according to the third embodiment of the present invention. The substrate processing apparatus 3 is an apparatus for performing a resist coating process, a heating process, and a cooling process on the substrate 90 in a photolithography process that selectively etches the surface of the substrate 90. The substrate processing apparatus 3 mainly includes a resist coating processing unit 4, a plurality of heat treatment units 5 to 9, and a substrate transport mechanism 31.

  FIG. 16 is a longitudinal sectional view of the resist coating processing unit 4. First, the configuration of the resist coating processing unit 4 will be described with reference to FIGS. 15 and 16. The resist application processing unit 4 is a processing unit for applying a resist solution to the upper surface of the substrate 90 to form a resist film. As shown in FIGS. 15 and 16, the resist coating processing unit 4 mainly includes a chamber 41, a substrate holding plate 42, and a nozzle unit 43.

  The chamber 41 has a chamber upper portion 41a and a chamber lower portion 41b facing each other. The chamber upper portion 41a can be moved up and down. When the chamber upper portion 41a is lowered, the chamber upper portion 41a and the chamber lower portion 41b come into contact with each other to form an airtight chamber 41. When the chamber upper portion 41a rises, a gap is generated between the chamber upper portion 41a and the chamber lower portion 41b, and the substrate 90 can be transferred between the inside and the outside of the chamber 41 (state shown in FIG. 16).

  The substrate holding plate 42 is a plate for holding the substrate 90 inside the chamber 41. The substrate holding plate 42 has a flat outer shape, and the substrate 90 is placed horizontally on the upper surface thereof. The substrate holding plate 42 is formed with a plurality of discharge holes 42a for discharging nitrogen gas upward and a plurality of suction holes 42b for sucking the gas above the plate.

  The plurality of ejection holes 42a are perforations that vertically penetrate the substrate holding plate 42, and are formed in spots (spots) in a top view. Each discharge hole 42 a is connected to an air supply pipe 44 a on the lower surface side of the substrate holding plate 42. A nitrogen gas supply source 44b is connected to the upstream side of the air supply pipe 44a, and an open / close valve 44c is inserted in the middle of the path of the air supply pipe 44a. Therefore, when the on-off valve 44c is opened, nitrogen gas is supplied from the nitrogen gas supply source 44b, and nitrogen gas is discharged from the discharge holes 42a toward the upper portion of the substrate holding plate 12.

  On the other hand, the plurality of suction holes 42b are perforations that vertically penetrate the substrate holding plate 42, and are formed in spots (spots) in a top view. Each suction hole 42 b is connected to the exhaust pipe 44 e on the lower surface side of the substrate holding plate 42. An exhaust part 44f that performs forced exhaust by a vacuum pump or the like is connected to the downstream side of the exhaust pipe 44e, and an open / close valve 44g is interposed in the middle of the path of the exhaust pipe 44e. Therefore, when the on-off valve 44g is opened, the gas above the substrate holding plate 42 is sucked into the suction hole 42b and exhausted to the exhaust part 44f via the exhaust pipe 44e.

  When the substrate 90 is placed on the substrate holding plate 42 and the on-off valve 44c and the on-off valve 44g are opened, nitrogen gas is blown from the plurality of discharge holes 42a to the lower surface of the substrate 90, and the substrate holding plate 42 and the substrate The gas between 90 is sucked into the plurality of suction holes 42b. As a result, upward buoyancy and adsorption force to the substrate holding plate 42 act on the substrate 90, and the substrate 90 is held on the substrate holding plate 42 in a non-contact manner at a constant height.

  The plurality of discharge holes 42a and the plurality of suction holes 42b are alternately arranged in a lattice shape in a top view. That is, on the substrate holding plate 42, the plurality of discharge holes 42a and the plurality of suction holes 42b are all arranged uniformly. For this reason, both the buoyancy and the adsorption force with respect to the substrate 90 act uniformly on the surface of the substrate 90, and the substrate 90 is stably held on the substrate holding plate 12 while maintaining a horizontal posture.

  The nozzle portion 43 is a discharge mechanism for discharging the resist solution onto the upper surface of the substrate 90 held on the substrate holding plate 42. The nozzle portion 43 is connected to a resist solution supply source (not shown), and a slit-like discharge port formed in the y-axis direction is formed below the nozzle portion 43. The nozzle portion 43 is configured to be movable in the x-axis direction along the surface of the substrate 90 on the substrate holding plate 42. Therefore, the nozzle portion 43 can apply the resist solution supplied from the resist solution supply source to the upper surface of the substrate 90 while scanning the upper surface of the substrate 90 held on the substrate holding plate 42.

  The heat treatment parts 5 to 9 all have the same configuration, and FIG. 17 is a longitudinal sectional view thereof. Below, the structure of the heat processing parts 5-9 is demonstrated, referring FIG. 15 and FIG. As shown in FIGS. 15 and 17, each of the heat treatment units 5 to 9 includes a chamber 51 and a substrate holding plate 52.

  The chamber 51 has a chamber upper portion 51a and a chamber lower portion 51b that face each other. The chamber upper part 51a can be moved up and down. When the chamber upper part 51a is lowered, the chamber upper part 51a and the chamber lower part 51b come into contact with each other to form an airtight chamber 51. When the chamber upper portion 51a is raised, a gap is generated between the chamber upper portion 51a and the chamber lower portion 51b, and the substrate 90 can be transferred between the inside and the outside of the chamber 51 (the state shown in FIG. 17).

  The substrate holding plate 52 is a plate for holding the substrate 90 in a non-contact manner inside the chamber 51 and heating the held substrate 90. The substrate holding plate 52 has a flat outer shape and is installed in the chamber 51 in a horizontal posture. The substrate holding plate 52 is formed with a plurality of discharge holes 52a for discharging nitrogen gas upward and a plurality of suction holes 52b for sucking the gas above the plate.

  The plurality of ejection holes 52 a are slit-shaped perforations formed on the upper surface side of the substrate holding plate 52. Each ejection hole 52 a is formed in a direction (y-axis direction) perpendicular to the transport direction of the substrate 90 and is arranged along the transport direction (x-axis direction) of the substrate 90. An air supply pipe 54a is connected to each discharge hole 52a. A nitrogen gas supply source 54b is connected to the upstream side of the air supply pipe 54a, and an open / close valve 54c is interposed in the middle of the path of the air supply pipe 54a. The air supply pipe 54a is provided with a plurality of temperature control portions 54d that can be individually controlled for each discharge hole 52a. Each temperature control unit 54d is configured by a heater that heats the nitrogen gas in the air supply pipe 54a or a water-cooled tube that cools the nitrogen gas in the air supply pipe 54a. For this reason, when the on-off valve 54c is opened and each temperature control unit 54d is operated, the nitrogen gas supplied from the nitrogen gas supply source 54b and heated or cooled by each temperature control unit 54d is held from each discharge hole 52a to the substrate. It is discharged toward the upper part of the plate 52.

  On the other hand, the plurality of suction holes 52 b are slit-shaped perforations formed on the upper surface side of the substrate holding plate 52. Each suction hole 52 b is formed in a direction (y-axis direction) orthogonal to the transport direction of the substrate 90 and is arranged along the transport direction (x-axis direction) of the substrate 90. An exhaust pipe 54e is connected to each suction hole 52b. An exhaust part 54f that performs forced exhaust by a vacuum pump or the like is connected to the downstream side of the exhaust pipe 54e, and an on-off valve 54g is inserted in the middle of the path of the exhaust pipe 54e. Therefore, when the on-off valve 54g is opened, the gas above the substrate holding plate 52 is sucked into the suction hole 52b and exhausted to the exhaust part 54f via the exhaust pipe 54e.

  When the substrate 90 is placed on the substrate holding plate 52 and the on-off valve 54c and the on-off valve 54g are opened, nitrogen gas is blown from the plurality of discharge holes 52a to the lower surface of the substrate 90, and the substrate holding plate 52 and the substrate The gas between 90 is sucked into the plurality of suction holes 52b. Thus, upward buoyancy and adsorption force to the substrate holding plate 52 act on the substrate 90, and the substrate 90 is held on the substrate holding plate 52 in a non-contact manner at a certain height.

  The plurality of discharge holes 52a and the plurality of suction holes 52b are alternately arranged along the x-axis direction. That is, on the substrate holding plate 52, the plurality of ejection holes 52a and the plurality of suction holes 52b are all arranged uniformly. For this reason, both the buoyancy and the suction force with respect to the substrate 90 act uniformly in the plane of the substrate 90, and the substrate 90 is stably held on the substrate holding plate 52 while maintaining a horizontal posture.

  In addition, a plurality of temperature control parts 52 c each composed of a heater for heating the substrate holding plate 52 or a water-cooled tube for cooling the substrate holding plate are attached to the bottom of the substrate holding plate 52. The plurality of temperature control parts 52c are arranged in the transport direction of the substrate 90, and the output (heating power or cooling power) of each temperature control part 52c can be individually controlled. For this reason, when each temperature control part 52c is operated, each position of the substrate holding plate 52 is individually temperature controlled. For example, when each temperature control unit 52 is operated with different outputs, a temperature gradient in the x-axis direction is formed on the substrate holding plate 52. The substrate 90 held on the substrate holding plate 52 is heated or cooled according to the temperature of the substrate holding plate 52 at the holding position.

  Further, the nitrogen gas heated or cooled by the temperature adjusting unit 54d is sprayed on the lower surface of the substrate 90 held on the substrate holding plate 12. For this reason, heat is exchanged between the substrate 90 and the nitrogen gas, and the substrate 90 is heated or cooled. The outputs of the plurality of temperature control units 54d are individually controlled according to the outputs of the plurality of temperature control units 52c. Therefore, the temperature of the nitrogen gas discharged from each discharge hole 52a is also controlled according to the temperature gradient on the substrate holding plate 52, and the substrate 90 is heated or cooled according to the temperature. . As described above, the heat treatment units 5 to 9 include the first temperature control unit configured by the plurality of temperature control units 52c and the second temperature control unit configured by the plurality of temperature control units 54d. Yes.

  The substrate transport mechanism 31 is a mechanism for horizontally transporting the substrate 90 from the resist coating processing unit 4 to the heat treatment unit 9. As shown in FIG. 15, the substrate transport mechanism 31 moves along a pair of rail portions 31a laid along the left and right sides of the resist coating processing section 4 and the heat treatment sections 5 to 9, and the rail section 31a. And a pair of moving parts 31b. The rail portion 31a and the moving portion 31b can be configured by various known moving mechanisms. For example, a mechanism that converts the rotational drive of the motor into a linear motion via a ball screw or a conveyor belt, or a linear motor is used. It can be constituted by the mechanism which was.

  When the substrate transport mechanism 31 is operated, the pair of moving parts 31b translate in the x-axis direction along the rail part 31a. Each moving portion 31b is fixed with a contact portion 31c for contacting the end surface of the substrate 90 on the −x side. Therefore, when the pair of moving parts 13b are moved in the + x direction, the contact part 31c comes into contact with the end surface of the substrate 90 held in non-contact on the substrate holding plates 42 and 52 of each processing part, and the contact part The substrate 90 moves in the + x direction together with 31c. The contact portion 31c is rotatable on the moving portion 31b. When the chambers 41 and 51 of the respective processing units are closed, the contact portion 31c rotates sideways of the chambers 41 and 51. And evacuate (the state of the virtual line in FIG. 15).

  Further, the substrate processing apparatus 3 includes a control unit 32 in addition to the above configuration. FIG. 18 is a block diagram showing a connection configuration between the above-described units in the substrate processing apparatus 1 and the control unit 32. As shown in FIG. 18, the control unit 32 is electrically connected to the chamber upper portions 41a and 51a, the on-off valves 44c, 44g, 54c and 54g, the temperature control units 52c and 54d, and the substrate transport mechanism 31, and these To control the operation. The control unit 32 is specifically configured by a computer having a CPU and a memory, and performs the above-described control operation when the computer operates according to a program installed in the computer.

  When processing the substrate 90 in the substrate processing apparatus 3, first, the substrate 90 is carried into the chamber 41 of the resist coating processing unit 4. The substrate 90 is held in a non-contact manner on the substrate holding plate 42 in the chamber 41. The nozzle portion 43 applies a resist solution to the upper surface of the substrate 90 while moving in the −x direction on the upper portion of the substrate 90 held on the substrate holding plate 42. At the stage of resist application, the substrate 90 may be held in contact with the substrate holding plate 42, and the substrate 90 may be floated by discharging nitrogen gas from the plurality of discharge holes 42a after applying the resist.

  Next, the substrate transport mechanism 31 transports the substrate 90 in the + x direction by bringing the contact portion 31c into contact with the end portion on the −x side of the substrate 90 and moving in the + x direction. The substrate 90 is unloaded from the resist coating processing unit 4 and slowly conveyed on each substrate holding plate 52 of the heat treatment units 5-9. Each substrate holding plate 52 is temperature-controlled by a plurality of temperature control parts 52c, and the nitrogen gas discharged from the plurality of discharge holes 52a is temperature-controlled by a plurality of temperature control parts 54d. For this reason, the substrate 90 is temperature-controlled on each substrate holding plate 52 while being transported in the + x direction.

  FIG. 19 is a diagram illustrating an example of the temperature distribution of each substrate holding plate 52 in the heat treatment units 5 to 9. In FIG. 19, the horizontal axis indicates the position of each substrate holding plate 52 in the x-axis direction, and the vertical axis indicates the set temperature. In the example of FIG. 19, a temperature gradient is formed on the substrate holding plate 52 of the heat treatment section 5 so that the temperature gradually increases in the + x direction from the normal temperature T0 to the maximum temperature T1. The holding plate 52 is set so as to have the maximum temperature T1 as a whole. Further, a temperature gradient is formed on the substrate holding plate 52 of the heat treatment unit 8 so that the temperature gradually decreases in the + x direction from the maximum temperature T1 to the normal temperature T0. It is set to be room temperature T0. Further, the temperature of the nitrogen gas discharged from each discharge hole 52a on the substrate holding plate 52 is also set to a temperature corresponding to the temperature distribution of FIG. 19 according to the position in the x-axis direction.

  When the substrate 90 is transported in the heat treatment units 5 to 9, first, the substrate 90 is slowly heated from the normal temperature T 0 to the maximum temperature T 1 in the heat treatment unit 5 according to the temperature gradient of the substrate holding plate 52. The substrate 90 is maintained at the maximum temperature T1 while passing through the heat treatment units 6-7. Further, the substrate 90 is slowly cooled from the maximum temperature T1 to the normal temperature T0 according to the temperature gradient of the substrate holding plate 52 in the heat treatment unit 8, and is maintained at the normal temperature T0 while passing through the heat treatment unit 9. For this reason, the temperature of the substrate 90 does not rapidly increase or decrease, and the substrate 90 is heat-treated without unevenness. In order to prevent a rapid temperature rise of the substrate 90, it is desirable to set the temperature T2 of the head portion of the heat treatment unit 5 to be, for example, room temperature + 30 ° C. or less. Further, in order to prevent a rapid temperature drop of the substrate 90, it is desirable that the temperature T3 of the head portion of the heat treatment section 8 is set to be, for example, the maximum temperature T1-30 ° C. or higher.

  Moreover, in this substrate processing apparatus 3, since the rapid temperature change of the substrate 90 in the heat treatment units 5 to 9 can be prevented, the surface of the substrate 90 during the heat treatment can be obtained without completely drying the substrate 90 after resist application. There will be no unevenness in the state. Therefore, the reduced-pressure drying process after resist application can be omitted, and the configuration of the substrate processing apparatus 3 can be simplified.

  Further, the substrate processing apparatus 3 of the present embodiment also holds the substrate 90 on the substrate holding plate 52 in a non-contact manner, like the substrate processing apparatus 1 of the first embodiment and the substrate processing apparatus 2 of the second embodiment. Then, heat treatment or cooling treatment is performed while moving the substrate 90 in one direction. For this reason, members such as support pins do not come into contact with the lower surface of the substrate 90, and damage and contamination of the substrate 90 are prevented. Further, the heat treatment does not become partially uneven by a member such as a support pin. Further, since the heat treatment is performed while the substrate 90 is being transported, the in-plane surface of the substrate 90 can be uniformly heat-treated regardless of the gas flow on the lower surface side of the substrate 90.

  Further, the discharge holes 52 a and the suction holes 52 b of the present embodiment are formed in a slit shape in a direction orthogonal to the transport direction of the substrate 90. For this reason, the gas flow on the substrate holding plate 12 is uniform in the direction orthogonal to the transport direction of the substrate 90. Accordingly, the substrate 90 is uniformly heated in both the transport direction and the direction orthogonal to the transport direction, and the entire in-plane surface of the substrate 90 is extremely uniformly heat-treated.

<5. Modification of Third Embodiment>
The substrate transport mechanism 31 of the third embodiment is a mechanism that applies thrust to the substrate 90 from the rear side in the transport direction of the substrate 90, but the substrate transport means in the present invention is not limited to the above mechanism. For example, a mechanism that transports the substrate 90 in the x-axis direction while sandwiching the substrate 90 from the left and right (+ y side and −y side) of the substrate 90, or a mechanism that pulls the substrate 90 from the front side in the transport direction of the substrate 90. It may be.

  The substrate transport mechanism 13 transports the substrate 90 only in one direction (+ x direction). However, the substrate transport means in the present invention transports the substrate 90 in two or more directions. May be. For example, when the swing mechanism 16 as shown in FIG. 10 is applied to the substrate processing apparatus 3, the substrate 90 is alternately transferred in the + x direction and the −x direction in the portion where the temperature of the substrate holding plate 52 is constant. It may be. In this way, since the space for transporting the substrate 90 can be reduced, the area occupied by the substrate processing apparatus 3 can be reduced.

  In the substrate processing apparatus 3 described above, the slit widths of the discharge holes 52a and the suction holes 52b are constant. However, the slit widths may be adjusted according to the processing conditions of the substrate 90. For example, by using the slit width adjusting plate 22c as shown in FIGS. 11 and 12 or the slit width adjusting plate 22d as shown in FIGS. 13 and 14, the slits of the discharge holes 52a and the suction holes 52b are used. The width may be adjusted. Further, the discharge holes 52a and the suction holes 12b may be spot-like perforations such as the discharge holes 12a and the suction holes 12b of the first embodiment.

  The substrate processing apparatus 3 has the first temperature adjusting means constituted by the plurality of temperature adjusting parts 52c and the second temperature adjusting means constituted by the plurality of temperature adjusting parts 54d. Any one of these temperature control means may be used. However, if these two types of temperature control means are used, the temperature of the substrate 90 on the substrate holding plate 52 can be controlled more uniformly.

  In the above example, FIG. 18 is shown as an example of the set temperature of the substrate holding plate 52 in the heat treatment units 5 to 9, but the set temperature of the substrate holding plate 52 is not limited to the example of FIG. For example, a temperature gradient may not be created in one substrate holding plate 52, and the temperature of each substrate holding plate 52 may be differentiated for each heat treatment part.

  In the above example, the resist coating processing unit 4 is disposed on the upstream side in the substrate transport direction with respect to the heat treatment units 5 to 9. However, the coating processing unit that coats another processing solution on the upper surface of the substrate is a resist. It may be arranged in place of the coating processing unit 4.

  In addition, the substrate processing apparatus 3 described above is an apparatus that performs processing on a rectangular glass substrate for a liquid crystal display device. However, the substrate processing apparatus of the present invention is another substrate such as a semiconductor wafer or a glass substrate for PDP. May be a processing target.

It is a top view of the substrate processing apparatus in a 1st embodiment. It is a longitudinal cross-sectional view of the substrate processing apparatus in 1st Embodiment. It is the block diagram which showed the connection structure between the control part and each part in 1st Embodiment. It is the figure which showed the state of the substrate processing in 1st Embodiment. It is the figure which showed the state of the substrate processing in a substrate processing apparatus. It is the figure which showed the state of the substrate processing in a substrate processing apparatus. It is the figure which showed the state of the substrate processing in a substrate processing apparatus. It is a top view of the substrate processing apparatus in a 2nd embodiment. It is a longitudinal cross-sectional view of the substrate processing apparatus in 2nd Embodiment. It is a top view of the substrate processing apparatus provided with the rocking | fluctuation mechanism. It is a top view of the plate for slit width adjustment. It is a longitudinal cross-sectional view of the plate for slit width adjustment. It is a top view of the plate for slit width adjustment. It is a longitudinal cross-sectional view of the plate for slit width adjustment. It is a top view of the substrate processing apparatus in a 3rd embodiment. It is a longitudinal cross-sectional view of the resist application process part in 3rd Embodiment. It is a longitudinal cross-sectional view of the heat processing part in 3rd Embodiment. It is the block diagram which showed the connection structure between the control part and each part in 3rd Embodiment. It is the figure which showed the example of the temperature distribution of the heat processing part in 3rd Embodiment. It is the figure which showed the structure of the conventional substrate processing apparatus.

Explanation of symbols

1, 2, 3 Substrate processing apparatus 4 Resist coating processing unit 5-9 Heat treatment unit 10 Substrate holding plate 11, 41, 51 Chamber 12, 22, 42, 52 Substrate holding plate 12a, 22a, 42a, 52a Discharge hole 12b, 22b , 42b, 52b Suction hole 12c Heater 13, 31 Substrate transport mechanism 13a, 31a Rail part 13b, 31b Moving part 13c, 31c Abutting part 14d Heater 15, 32 Control part 16 Oscillating mechanism 22c Slit width adjusting plate 22d Slit width Adjustment plate 52c Temperature control unit 54d Temperature control unit 90 Substrate

Claims (13)

A substrate processing apparatus for performing a heat treatment on a substrate,
A substrate holding plate for holding the substrate in a non-contact manner by discharging gas from a plurality of discharge holes formed on the upper surface;
Temperature adjusting means for adjusting the temperature of the substrate held in a non-contact manner on the upper surface of the substrate holding plate;
Conveying means for conveying the substrate held in a non-contact manner on the upper surface of the substrate holding plate along the upper surface;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
A substrate processing apparatus, wherein a plurality of suction holes for sucking an upper gas are formed on the upper surface of the substrate holding plate. The substrate processing apparatus according to claim 1 or 2, wherein
The substrate processing apparatus, wherein the plurality of ejection holes and the plurality of suction holes are spot-shaped perforations arranged in a lattice pattern on the upper surface of the substrate holding plate. The substrate processing apparatus according to claim 1 or 2, wherein
The substrate processing apparatus, wherein the plurality of ejection holes and the plurality of suction holes are slit-shaped perforations formed in a direction orthogonal to a transport direction of the transport unit on the upper surface of the substrate holding plate. The substrate processing apparatus according to claim 4,
The substrate processing apparatus, wherein the plurality of discharge holes and the plurality of suction holes are alternately arranged along the transport direction of the transport means on the upper surface of the substrate holding plate. The substrate processing apparatus according to claim 4 or 5, wherein
A substrate processing apparatus, further comprising slit width adjusting means for adjusting a slit width of the plurality of discharge holes or the plurality of suction holes. A substrate processing apparatus according to any one of claims 1 to 6,
The substrate processing apparatus, wherein the transport unit includes a contact portion that contacts the substrate from a rear side in the transport direction, and a moving unit that moves the contact portion in the transport direction. A substrate processing apparatus according to any one of claims 1 to 7,
The substrate processing apparatus, wherein the transfer means has a swinging means for swinging the substrate. A substrate processing apparatus according to any one of claims 1 to 8,
The temperature adjusting means includes first temperature adjusting means for adjusting the temperature of the substrate by radiation of heat between the substrate holding plate and the substrate, and heat between the gas discharged from the plurality of discharge holes and the substrate. A substrate processing apparatus comprising: a second temperature adjusting unit that adjusts the temperature of the substrate by replacement. The substrate processing apparatus according to claim 9, comprising:
A plurality of the substrate holding plates arranged along the transport direction of the transport means;
The substrate processing apparatus, wherein the first temperature control means individually controls the temperature of the plurality of substrate holding plates. The substrate processing apparatus according to claim 10, comprising:
The first temperature adjusting means adjusts the temperature of each of the plurality of substrate holding plates individually for each region. The substrate processing apparatus according to claim 11,
The substrate processing apparatus characterized in that the second temperature adjusting means adjusts the temperature of gas discharged from the discharge holes formed in the region according to the temperature of each region of the substrate holding plate. A substrate processing apparatus according to any one of claims 1 to 12, wherein
A substrate processing apparatus, further comprising: a coating processing unit that applies a processing liquid to an upper surface of the substrate upstream of the substrate holding plate in the transport direction of the transport unit.

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