JP5049303B2 - Heat treatment apparatus, temperature adjustment method for heat treatment apparatus, and program - Google Patents

Description

  The present invention relates to a heat treatment apparatus for heat-treating an object to be processed such as a semiconductor wafer, a temperature adjustment method for the heat treatment apparatus, and a program.

  In a manufacturing process of a semiconductor device, a heat treatment apparatus that performs a film forming process of an object to be processed, for example, a semiconductor wafer is used. In this heat treatment apparatus, for example, a recipe in which processing conditions such as a processing temperature, a processing pressure, and a gas flow rate are written according to the type of thin film to be formed, the film thickness, and the like is selected. Thus, heat treatment based on predetermined processing conditions is performed.

  By the way, even if heat treatment based on such processing conditions is performed, for example, in the vicinity of a nozzle to which a film forming gas is supplied, the temperature tends to be low, so the film forming gas may not be in a sufficiently active state. is there. As described above, when the film forming gas is not sufficiently activated, the film attachment to the semiconductor wafer is deteriorated, for example, the film thickness uniformity of the thin film formed on the semiconductor wafer is deteriorated.

  In order to solve such a problem, for example, Patent Document 1 discloses that film thickness uniformity of a thin film formed on a semiconductor wafer is performed by performing preheating using a preheating device immediately before supplying a film forming gas into a processing container. A film forming method and a film forming apparatus that can improve the above are proposed.

JP 2003-209099 A

  By the way, even if heat treatment is performed based on predetermined processing conditions using such an apparatus, the film thickness of the thin film formed on the semiconductor wafer depends on the influence of individual apparatus differences and the type of semiconductor wafer to be processed. Uniformity may deteriorate. For this reason, the operator of the apparatus adjusts the temperature of the heater and the like based on experience and intuition, and ensures the film thickness uniformity of the thin film formed on the surface of the semiconductor wafer.

  As described above, in the film forming process, it is difficult for an operator who has no knowledge or experience about the heat treatment apparatus or the process to ensure the film thickness uniformity of the thin film formed on the semiconductor wafer. Therefore, there is a need for a heat treatment apparatus and the like that can easily adjust the temperature so that even these persons can ensure the film thickness uniformity of the thin film formed on the semiconductor wafer.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide a heat treatment apparatus, a temperature adjustment method for the heat treatment apparatus, and a program capable of easily adjusting the temperature.

In order to achieve the above object, a heat treatment apparatus according to the first aspect of the present invention comprises:
Heating means for heating a processing chamber containing a plurality of objects to be processed;
A plurality of processing gas supply means for supplying a processing gas into the processing chamber;
A plurality of preheating means that are respectively provided in the plurality of processing gas supply means and that heat the processing gas supplied by the processing gas supply means before supplying the processing gas into the processing chamber;
The processing content includes the temperature in the processing chamber heated by the heating means, the temperature of each processing gas heated by the plurality of preheating means, the in-plane uniformity of the processing, and the uniformity between the processing surfaces. Processing condition storage means for storing the corresponding processing conditions;
Processing means for processing the object to be processed under the processing conditions stored by the processing condition storage means;
When determining whether the processing result processed by the processing means satisfies in-plane uniformity and inter-surface uniformity of the processing stored in the processing condition storage means, and determining that any of these is not satisfied, The temperature of the processing gas heated by the plurality of preheating means is calculated such that the in-plane uniformity and the inter-surface uniformity are satisfied, and the processing gas temperature of the processing condition stored in the processing condition storage means is calculated. A processing gas temperature adjusting means for adjusting the temperature of the processing gas by processing the object to be processed under the changed processing conditions, respectively.
A, a,
When the processing gas temperature adjusting means determines that the in-plane uniformity and inter-surface uniformity are not satisfied, the in-plane uniformity and the inter-surface temperature are set as respective temperatures of the processing gas heated by the plurality of preheating means. The temperature is calculated so as to satisfy the uniformity and minimize the deviation of the value indicating the processing result .

The processing content is, for example, a film forming process.
The processing conditions stored in the processing condition storage means may include conditions relating to the average film thickness of the formed thin film. In this case, when the processing gas temperature adjusting means determines that the processing result processed by the processing means does not satisfy the condition regarding the average film thickness, the temperature of the processing gas heated by the plurality of preheating means is the surface. Temperatures that satisfy conditions relating to internal uniformity, inter-surface uniformity, and average film thickness are calculated, and the temperatures of the processing gases stored in the processing condition storage means are calculated. The temperature of the processing gas is adjusted by processing the object under the changed processing conditions.
The processing chamber may be divided into a plurality of zones, and the heating means may be capable of setting a temperature for each zone in the processing chamber.

The temperature adjustment method of the heat treatment apparatus according to the second aspect of the present invention is as follows:
A heating means for heating a processing chamber containing a plurality of objects to be processed, a plurality of processing gas supply means for supplying a processing gas into the processing chamber, and the processing gas supply means; A plurality of preheating means for heating the processing gas supplied by the supply means before supplying the processing gas into the processing chamber, the temperature in the processing chamber heated by the heating means, and the processing gas heated by the plurality of preheating means Processing condition storage means for storing processing conditions according to processing contents, including the respective temperatures, in-plane uniformity of processing, and uniformity between processing faces, and processing conditions stored by the processing condition storage means A temperature adjusting method for a heat treatment apparatus comprising: a processing means for processing the object to be processed;
When determining whether the processing result processed by the processing means satisfies in-plane uniformity and inter-surface uniformity of the processing stored in the processing condition storage means, and determining that any of these is not satisfied, The temperature of the processing gas heated by the plurality of preheating means is calculated such that the in-plane uniformity and the inter-surface uniformity are satisfied, and the processing gas temperature of the processing condition stored in the processing condition storage means is calculated. A processing gas temperature adjustment step of adjusting the temperature of the processing gas by processing the object to be processed under the changed processing conditions, respectively .
If it is determined that the in-plane uniformity and the inter-surface uniformity are not satisfied in the processing gas temperature adjustment step, the in-plane uniformity and the inter-surface temperature are set as respective temperatures of the processing gas heated by the plurality of preheating means. The temperature is calculated so as to satisfy the uniformity and minimize the deviation of the value indicating the processing result .

Examples of the processing contents include a film forming process.
The processing condition stored in the processing condition storage means may include a condition relating to the average film thickness of the formed thin film. In this case, in the process gas temperature adjustment step, when it is determined that the process result processed by the process unit does not satisfy the condition regarding the average film thickness, the temperature of the process gas heated by the plurality of preheating units is the surface. Temperatures satisfying conditions relating to internal uniformity, inter-surface uniformity, and average film thickness are calculated, and the temperature of the processing gas stored in the processing condition storage means is the temperature of the calculated processing gas. And the temperature of the processing gas is adjusted by processing the object under the changed processing conditions.
The processing chamber may be divided into a plurality of zones, and the heating means may be settable for each zone in the processing chamber.

The program according to the third aspect of the present invention is:
Computer
Heating means for heating a processing chamber containing a plurality of objects to be processed;
A plurality of processing gas supply means for supplying a processing gas into the processing chamber;
A plurality of preheating means provided in the plurality of processing gas supply means, respectively, for heating the processing gas supplied by the processing gas supply means before supplying the processing gas into the processing chamber;
The processing content includes the temperature in the processing chamber heated by the heating means, the temperature of each processing gas heated by the plurality of preheating means, the in-plane uniformity of the processing, and the uniformity between the processing surfaces. Processing condition storage means for storing the corresponding processing conditions;
Processing means for processing the object to be processed under the processing conditions stored by the processing condition storage means;
When determining whether the processing result processed by the processing means satisfies in-plane uniformity and inter-surface uniformity of the processing stored in the processing condition storage means, and determining that any of these is not satisfied, The temperature of the processing gas heated by the plurality of preheating means is calculated such that the in-plane uniformity and the inter-surface uniformity are satisfied, and the processing gas temperature of the processing condition stored in the processing condition storage means is calculated. A processing gas temperature adjusting means for adjusting the temperature of the processing gas by processing the object to be processed under the changed processing conditions, respectively.
To function as,
When the processing gas temperature adjusting means determines that the in-plane uniformity and inter-surface uniformity are not satisfied, the in-plane uniformity and the inter-surface temperature are set as respective temperatures of the processing gas heated by the plurality of preheating means. The temperature is calculated so as to satisfy the uniformity and minimize the deviation of the value indicating the processing result .

  According to the present invention, temperature adjustment can be easily performed.

It is a figure which shows the structure of the heat processing apparatus which concerns on embodiment of this invention. It is a figure which shows the structural example of the control part of FIG. It is a figure which shows the zone in a reaction tube. It is a figure which shows the relationship between the temperature of a preheating part, and the film thickness of each semiconductor wafer. It is a flowchart for demonstrating a temperature adjustment process. It is a figure which shows an example of the recipe for processes. Is a diagram illustrating an example of a film thickness data of the measured SiO ₂ film. It is a figure for demonstrating the process of film thickness data. It is a figure which shows an example of the processed film thickness data. It is a figure for demonstrating the temperature adjustment of a preheating part.

Hereinafter, the present embodiment will be described by taking as an example the case where the heat treatment apparatus, the temperature adjustment method of the heat treatment apparatus, and the program of the present invention are applied to the batch type vertical heat treatment apparatus shown in FIG. In this embodiment mode, an example of forming a SiO ₂ film on a semiconductor wafer by using dichlorosilane (SiH ₂ Cl ₂ ) and dinitrogen monoxide (N ₂ O) as a film forming gas is taken as an example. The present invention will be described.

  As shown in FIG. 1, the heat treatment apparatus 1 of the present embodiment includes a reaction tube 2 having a substantially cylindrical shape and a ceiling. The reaction tube 2 is arranged so that its longitudinal direction is in the vertical direction. The reaction tube 2 is made of a material excellent in heat resistance and corrosion resistance, for example, quartz.

  A substantially cylindrical manifold 3 is provided below the reaction tube 2. The upper end of the manifold 3 is hermetically joined to the lower end of the reaction tube 2. An exhaust pipe 4 for exhausting the gas in the reaction tube 2 is airtightly connected to the manifold 3. The exhaust pipe 4 is provided with a pressure adjusting unit 5 including a valve, a vacuum pump, and the like, and the inside of the reaction pipe 2 is adjusted to a desired pressure (degree of vacuum).

  A lid 6 is disposed below the manifold 3 (reaction tube 2). The lid body 6 is configured to be movable up and down by the boat elevator 7, and when the lid body 6 is raised by the boat elevator 7, the lower side (furnace port portion) of the manifold 3 (reaction tube 2) is closed, and the boat elevator 7 covers the lid body 6. It arrange | positions so that the lower side (furnace port part) of the reaction tube 2 may be opened when the body 6 descends.

  A wafer boat 9 is provided above the lid 6 via a heat insulating cylinder (heat insulator) 8. The wafer boat 9 is a wafer holder that accommodates (holds) an object to be processed, for example, a semiconductor wafer W. In the present embodiment, a plurality of semiconductor wafers W, for example, at a predetermined interval in the vertical direction, for example, It is configured to accommodate 150 sheets. Then, the semiconductor wafer W is accommodated in the wafer boat 9 and the lid 6 is raised by the boat elevator 7, whereby the semiconductor wafer W is loaded into the reaction tube 2.

  Around the reaction tube 2, for example, a heater unit 10 made of a resistance heating element is provided so as to surround the reaction tube 2. The heater 10 heats the inside of the reaction tube 2 to a predetermined temperature, and as a result, the semiconductor wafer W is heated to a predetermined temperature. The heater unit 10 includes, for example, heaters 11 to 15 arranged in five stages, and power controllers 16 to 20 are connected to the heaters 11 to 15, respectively. For this reason, the heaters 11 to 15 can be independently heated to desired temperatures by supplying power to the power controllers 16 to 20 independently. Thus, the reaction tube 2 is divided into five zones as shown in FIG. 3 to be described later by the heaters 11 to 15.

  The manifold 3 is provided with a plurality of processing gas supply pipes for supplying a processing gas into the reaction tube 2. In the present embodiment, three process gas supply pipes 21 to 23 are provided in the manifold 3. The processing gas supply pipe 21 is formed so as to extend from the side of the manifold 3 to the vicinity of the top (TOP) of the wafer boat 9. The processing gas supply pipe 22 is formed so as to extend from the side of the manifold 3 to the vicinity of the center (CTR) of the wafer boat 9. The processing gas supply pipe 23 is formed so as to extend from the side of the manifold 3 to the vicinity of the lower part (BTM) of the wafer boat 9.

  The process gas supply pipes 21 to 23 are provided with flow rate adjusting units 24 to 26 and preheating units 27 to 29, respectively. The flow rate adjusting units 24 to 26 are configured by a mass flow controller (MFC) or the like for adjusting the flow rate of the processing gas flowing in the processing gas supply pipes 21 to 23. The preheating units 27 to 29 are formed, for example, in a structure in which a heater or the like is wound around a quartz container connected to the processing gas supply pipes 21 to 23. The preheating units 27 to 29 are connected to a power controller (not shown). Then, by supplying power to the power controller independently, the preheating units 27 to 29 can be independently heated to a desired temperature. For this reason, the process gas supplied from the process gas supply pipes 21 to 23 is adjusted to a desired flow rate by the flow rate adjusting units 24 to 26 and heated to a desired temperature by the preheating units 27 to 29, respectively. 2 is supplied.

  Further, the heat treatment apparatus 1 includes a control unit (controller) 50 for controlling processing parameters such as a gas flow rate in the reaction tube 2, a pressure, and a processing atmosphere temperature. The control unit 50 outputs control signals to the flow rate adjustment units 24 to 26, the power controllers of the preheating units 27 to 29, the pressure adjustment unit 5, the power controllers 16 to 20 of the heaters 11 to 15, and the like. FIG. 2 shows the configuration of the control unit 50.

  As shown in FIG. 2, the control unit 50 includes a model storage unit 51, a recipe storage unit 52, a ROM 53, a RAM 54, an I / O port 55, a CPU 56, and a bus 57 that interconnects these, It is composed of

  The model storage unit 51 stores a model necessary for calculating the temperatures of the preheating units 27 to 29. Specifically, a model indicating the relationship between the temperature of the preheating units 27 to 29 and the film thickness of each semiconductor wafer W is stored. Details of this model will be described later.

  The recipe storage unit 52 stores a process recipe for determining a control procedure in accordance with the type of film forming process executed by the heat treatment apparatus 1. The process recipe is a recipe prepared for each process (process) actually performed by the user. Each process from loading of the semiconductor wafer W to the reaction tube 2 until unloading of the processed semiconductor wafer W is performed. A change in temperature, a change in pressure in the reaction tube 2, start and stop timing of gas supply, supply amount, and the like are defined. In addition, the process recipe includes constraints on in-plane uniformity (in-plane film thickness difference), inter-surface uniformity (in-plane film thickness difference), and average film thickness of the thin film formed by this film forming process. It is remembered.

The ROM 53 is a recording medium that includes an EEPROM, a flash memory, a hard disk, and the like, and stores an operation program of the CPU 56 and the like.
The RAM 54 functions as a work area for the CPU 56.

  The I / O port 55 supplies measurement signals relating to temperature, pressure, and gas flow rate to the CPU 56, and outputs control signals output by the CPU 56 to the respective units (the pressure adjusting unit 5, the power controllers 16 to 20 of the heaters 11 to 15, Output to the power controllers of the adjustment units 24 to 26 and the preheating units 27 to 29). The I / O port 55 is connected to an operation panel 58 on which an operator operates the heat treatment apparatus 1.

  A CPU (Central Processing Unit) 56 constitutes the center of the control unit 50, executes an operation program stored in the ROM 53, and creates a process recipe stored in the recipe storage unit 52 in accordance with an instruction from the operation panel 58. Along with this, the operation of the heat treatment apparatus 1 is controlled.

Further, the CPU 56 calculates the temperatures of the preheating units 27 to 29 based on the model stored in the model storage unit 51, the film thickness data of the semiconductor wafer W, and the necessary film thickness of the semiconductor wafer W. And a control signal is output to an electric power controller etc. so that the temperature of the preheating parts 27-29 may become the calculated temperature, and these temperature is adjusted. Moreover, CPU56 updates the temperature of the preheating parts 27-29 memorize | stored in the corresponding recipe memory | storage part 52 to the calculated temperature.
The bus 57 transmits information between the units.

  Next, the model stored in the model storage unit 51 will be described. As described above, the model storage unit 51 stores a model indicating the relationship between the temperature of the preheating units 27 to 29 and the film thickness of each semiconductor wafer W. The model showing the relationship between the temperature of the preheating units 27 to 29 and the film thickness of each semiconductor wafer W is such that the film thickness of each semiconductor wafer W is changed when the temperature of each of the preheating units 27 to 29 is changed by 1 ° C. This model shows how much it changes. FIG. 4 shows an example of this model.

  In general, when the temperature of the preheating units 27 to 29 is increased, film formation is facilitated. This tendency also affects the film thickness of the thin film formed at the center and end of the semiconductor wafer W. Further, the film thickness of the thin film formed on the semiconductor wafer W is also affected by the housing position (ZONE) of the semiconductor wafer W. Therefore, in this model, as shown in FIG. 4, for each of the preheating units 27 to 29, the temperature of the thin film when the temperature is increased from 400 ° C., 500 ° C., 600 ° C., and 700 ° C. by 1 ° C. The film thickness change amount is shown. In this model, the film thickness change amount of the thin film formed at the center (center: Ctr) of the semiconductor wafer W and at a distance of 150 mm (edge: Edge) from the center is shown. Further, in this model, the change amount of the film thickness formed on the semiconductor wafer W is shown for each of the semiconductor wafers W (slots) accommodated in the ZONEs 1 to 5. In addition, when the temperature of the preheating parts 27-29 is temperature other than this, for example, 550 degreeC, this model can be used by carrying out the weighted average of the data of a film thickness change amount.

  In the creation of this model, conditions other than the temperatures of the preheating units 27 to 29 are fixed, and any one temperature of the preheating units 27 to 29 is changed. The film thickness of the thin film formed on the edge was measured, and the change in film thickness per 1 ° C. was calculated. For example, when the temperature of the preheating unit 29 is 700 ° C., the thickness of the thin film formed at the center and the edge is measured for the thin film formed with the temperature of the preheating unit 29 being 695 ° C. and 705 ° C. Then, the difference in thickness (amount of change in thickness) was divided by 10 (° C.) to calculate the amount of change in thickness per 1 ° C.

  In addition, the model which shows the relationship between the temperature of the preheating parts 27-29 and the film thickness of each semiconductor wafer W is such that these temperatures are changed by 1 ° C. so that the temperature of the preheating parts 27-29 can be adjusted. Any model can be used as long as it can indicate how much the film thickness of each semiconductor wafer W changes, and various other models may be used.

  In addition, this model may have a default value that is not optimal depending on the process conditions and the state of the equipment. Therefore, an extended Kalman filter is added to the temperature calculation software, and a learning function is installed. You may learn a temperature model. For the learning function using the Kalman filter, for example, a technique disclosed in US Pat. No. 5,991,525 can be used.

  Next, the temperature adjustment method (temperature adjustment process) which adjusts the temperature of the preheating parts 27-29 using the heat processing apparatus 1 comprised as mentioned above is demonstrated. This temperature adjustment process may be performed at the setup stage before the film formation process or may be performed simultaneously with the film formation process. FIG. 5 is a flowchart for explaining the temperature adjustment process.

The operator operates the operation panel 58 to select the process type, in this example, the formation of the SiO ₂ film (DCS-HTO) of dichlorosilane and dinitrogen monoxide (N ₂ O), and the target. The thickness of the SiO ₂ film is input.

  Note that the operator may input the constraint condition by operating the operation panel 58 if there is a constraint condition in film formation. For example, the process time (for example, 20 to 30 minutes), the temperature range of the preheating unit 27 to 29 (for example, 600 to 800 ° C.), the target in-plane uniformity (in-plane film thickness difference) ), Uniformity between surfaces (thickness difference between surfaces), and average film thickness.

First, the control unit 50 (CPU 56) determines whether or not a process type or the like has been input (step S1). When determining that necessary information has been input (step S1; Yes), the CPU 56 reads out a process recipe corresponding to the input process type from the recipe storage unit 52 (step S2). In the process recipe, as shown in FIG. 6, process conditions for a general SiO ₂ film using dichlorosilane and dinitrogen monoxide are stored.

Next, the CPU 56 lowers the boat elevator 7 (lid body 6), and arranges the wafer boat 9 on which the semiconductor wafer W (monitor wafer) is mounted on each of the ZONEs 1 to 5 on the lid body 6. Subsequently, the CPU 56 raises the boat elevator 7 (lid body 6) and loads the wafer boat 9 (monitor wafer) into the reaction tube 2. Then, the CPU 56 controls the pressure adjustment unit 5, the power controllers 16 to 20 of the heaters 11 to 15, the flow rate adjustment units 24 to 26, the power controllers of the preheating units 27 to 29, and the like according to the recipe read from the recipe storage unit 52. Then, a SiO ₂ film is formed on the monitor wafer (step S3).

When the film forming process is completed, the CPU 56 lowers the boat elevator 7 (lid 6), unloads the monitor wafer on which the SiO ₂ film is formed, and transports the monitor wafer to, for example, a measuring device (not shown). Then, the film thickness of the SiO ₂ film formed on the monitor wafer is measured (step S4). When the measurement apparatus measures the thickness of the SiO ₂ film formed on each monitor wafer, the measured thickness data of the SiO ₂ film is transmitted to the heat treatment apparatus 1 (CPU 56).

When the CPU 56 receives the measured film thickness data of the SiO ₂ film, the CPU 56 processes the film thickness data (step S5). This is because the measured film thickness data of the SiO ₂ film is as many as a total of nine points, one point at the center of the semiconductor wafer W and eight points on the end side, as shown in FIG. In the present embodiment, the measured thickness data of the SiO ₂ film is processed into a total of two points at the center and the end of the semiconductor wafer W.

Specifically, the film thickness distribution curve in the wafer surface of the acquired film thickness data is calculated by the least square method, and the calculated film thickness distribution curve is processed into the film thickness data at the center and the end of the semiconductor wafer W. That is, the film thickness Y formed on the semiconductor wafer W is expressed as a quadratic function (Y = aX ² + b) of the distance X from the center of the semiconductor wafer W, and a and b are obtained from the received film thickness data. The approximate curve shown in FIG. 8 is calculated. Subsequently, for each slot, a film thickness d0 at the center (Ctr) of the semiconductor wafer W and a film thickness d1 at a distance of 150 mm (Edge) from the center of the semiconductor wafer W are calculated from the calculated approximate curve. As a result, the film thickness data shown in FIG. 7 is processed into film thickness data consisting of a total of two points, one center (Ctr) and one end (Edge) as shown in FIG.

  Next, the CPU 56 determines whether or not the processed film thickness data satisfies the constraint conditions regarding the in-plane uniformity, inter-plane uniformity and average film thickness stored in the read recipe (step S6). For example, in determining whether or not the in-plane uniformity is satisfied, the CPU 56 determines the in-plane film in which the film thickness difference between the end (Edge) and the center (Ctr) of the processed film thickness data is stored in the recipe. It is determined whether or not the thickness difference is smaller. In determining whether or not the inter-surface uniformity is satisfied, the CPU 56 determines the average film thickness data of the processed film thickness data of the zone 1 (slot 11) and the zone 5 (slot 115) (the average film between the end and the center). It is determined whether or not (thickness) is smaller than the inter-surface film thickness difference stored in the recipe. In determining whether or not the average film thickness is satisfied, the CPU 56 determines whether or not the average film thickness of the processed film thickness data satisfies the average film thickness condition stored in the recipe.

  If the CPU 56 determines that any of the constraint conditions regarding in-plane uniformity, inter-plane uniformity, and average film thickness is not satisfied (step S6; No), the CPU 56 calculates (adjusts) the temperature of the preheating units 27 to 29. (Step S7).

  The temperature of the preheating units 27 to 29 is calculated using an optimization algorithm such as linear programming or quadratic programming, and in-plane uniformity, inter-plane uniformity, and average film thickness stored in the read recipe. Each temperature is calculated so that the deviation of the film thickness at all points is minimized under this condition. For example, as shown in FIG. 10, the difference in film thickness from the target is obtained for the center and end of each slot, and the relationship between the temperature of the preheating units 27 to 29 shown in FIG. From the model showing the optimal temperature of each of the preheating units 27 to 29 that satisfies the constraints on in-plane uniformity, inter-surface uniformity, and average film thickness, and that minimizes the difference in film thickness from the target. It is calculated by using the conversion algorithm.

  Subsequently, the CPU 56 updates the temperature of the read recipe preheating units 27 to 29 to the calculated temperature (step S8), and returns to step S3. If the CPU 56 determines that the in-plane uniformity, inter-plane uniformity and the average film thickness are satisfied (step S6; Yes), the process is terminated.

As described above, according to the present embodiment, the temperature of the preheating units 27 to 29 is adjusted only by inputting the process type and the film thickness of the target thin film, and the surface of the semiconductor wafer W It is possible to ensure film thickness uniformity of the SiO ₂ film formed on the substrate. For this reason, even an operator who has no knowledge or experience regarding the heat treatment apparatus or process can easily adjust the temperature.

  In addition, this invention is not restricted to said embodiment, A various deformation | transformation and application are possible. Hereinafter, other embodiments applicable to the present invention will be described.

In the above-described embodiment, the present invention will be described by taking as an example the case where the temperature of the preheating units 27 to 29 is adjusted when any of the constraints on in-plane uniformity, inter-surface uniformity, and average film thickness is not satisfied. However, for example, the temperature of the preheating units 27 to 29 may be adjusted when any of the constraint conditions regarding in-plane uniformity and inter-surface uniformity is not satisfied. In this case, the film thickness uniformity of the SiO ₂ film formed on the surface of the semiconductor wafer W can be ensured by adjusting the average film thickness by changing the process time.

  In the said embodiment, although this invention was demonstrated to the example in case the three preheating parts 27-29 are provided in the heat processing apparatus 1, even if the number of preheating parts is two, it is four or more May be set arbitrarily. The number of heater stages (number of zones), the number of monitor wafers extracted from each zone, and the like can be arbitrarily set.

In the above embodiment, the case of processing the film thickness data of the measured SiO ₂ films The present invention has been described as an example, without processing the film thickness data of the measured SiO ₂ film, the preheating section 27 The temperature of ~ 29 may be adjusted.

In the above embodiment, the present invention has been described by taking as an example the case of forming a SiO ₂ film using dichlorosilane and dinitrogen monoxide. For example, dichlorosilane and ammonia (NH ₃ ) are used. The present invention can also be applied to the formation of a SiN film.

In the above embodiment, the present invention has been described by taking the case of the film forming process of the SiO ₂ film as an example. However, the type of the process is arbitrary, and various batches such as a CVD apparatus and an oxidizing apparatus for forming other types of films. It is applicable to a heat treatment apparatus of the type.

  In the above embodiment, the present invention has been described by taking as an example the case of adjusting the film thickness of the film formed by the film formation process. For example, the diffusion concentration or diffusion depth in the impurity diffusion process, the etching rate, You may use for optimization of various process results, such as a reflectance, an embedding characteristic, and step coverage.

  In the above embodiment, the present invention has been described by taking the case of a batch type heat treatment apparatus having a single pipe structure as an example. For example, a batch type vertical type having a double pipe structure in which the reaction tube 2 is composed of an inner pipe and an outer pipe. It is also possible to apply the present invention to a mold heat treatment apparatus. The present invention is not limited to the processing of semiconductor wafers, and can be applied to processing of FPD substrates, glass substrates, PDP substrates, and the like.

  The control unit 50 according to the embodiment of the present invention can be realized using a normal computer system, not a dedicated system. For example, by installing the program from a recording medium (such as a flexible disk or a CD-ROM) that stores the program for executing the above-described process in a general-purpose computer, the control unit 50 that executes the above-described process is configured. be able to.

  The means for supplying these programs is arbitrary. In addition to being able to be supplied via a predetermined recording medium as described above, for example, it may be supplied via a communication line, a communication network, a communication system or the like. In this case, for example, the program may be posted on a bulletin board (BBS) of a communication network and provided by superimposing it on a carrier wave via the network. Then, the above-described processing can be executed by starting the program thus provided and executing it in the same manner as other application programs under the control of the OS.

  The present invention is useful for adjusting the temperature of a heat treatment apparatus.

DESCRIPTION OF SYMBOLS 1 Heat processing apparatus 2 Reaction tube 3 Manifold 6 Lid body 9 Wafer boat 10 Heater part 11-15 Heater 16-20 Power controller 21-23 Process gas supply pipe 24-26 Flow volume adjustment part 27-29 Preheating part 50 Control part 51 Model Storage unit 52 Recipe storage unit 53 ROM
54 RAM
56 CPU
W Semiconductor wafer

Claims (9)

Heating means for heating a processing chamber containing a plurality of objects to be processed;
A plurality of processing gas supply means for supplying a processing gas into the processing chamber;
A plurality of preheating means that are respectively provided in the plurality of processing gas supply means and that heat the processing gas supplied by the processing gas supply means before supplying the processing gas into the processing chamber;
The processing content includes the temperature in the processing chamber heated by the heating means, the temperature of each processing gas heated by the plurality of preheating means, the in-plane uniformity of the processing, and the uniformity between the processing surfaces. Processing condition storage means for storing the corresponding processing conditions;
Processing means for processing the object to be processed under the processing conditions stored by the processing condition storage means;
When determining whether the processing result processed by the processing means satisfies in-plane uniformity and inter-surface uniformity of the processing stored in the processing condition storage means, and determining that any of these is not satisfied, The temperature of the processing gas heated by the plurality of preheating means is calculated such that the in-plane uniformity and the inter-surface uniformity are satisfied, and the processing gas temperature of the processing condition stored in the processing condition storage means is calculated. A processing gas temperature adjusting means for adjusting the temperature of the processing gas by processing the object to be processed under the changed processing conditions, respectively.
A, a,
When the processing gas temperature adjusting means determines that the in-plane uniformity and inter-surface uniformity are not satisfied, the in-plane uniformity and the inter-surface temperature are set as respective temperatures of the processing gas heated by the plurality of preheating means. A heat treatment apparatus characterized by calculating a temperature that satisfies uniformity and minimizes a deviation of a value indicating the treatment result .   The heat treatment apparatus according to claim 1, wherein the processing content is a film forming process. The processing conditions stored in the processing condition storage means include conditions relating to the average film thickness of the formed thin film,
When the processing gas temperature adjusting means determines that the processing result processed by the processing means does not satisfy the condition regarding the average film thickness, the temperature of the processing gas heated by the plurality of preheating means is the in-plane uniformity. , Each of the temperatures that satisfy the conditions regarding the inter-surface uniformity and the average film thickness is calculated, and each temperature of the processing gas stored in the processing condition storage means is set to the calculated processing gas temperature. The heat treatment apparatus according to claim 2, wherein the temperature of the processing gas is adjusted by changing the processed object under the changed processing conditions. The processing chamber is divided into a plurality of zones,
The heat treatment apparatus according to any one of claims 1 to 3, wherein the heating unit can set a temperature for each zone in the processing chamber. A heating means for heating a processing chamber containing a plurality of objects to be processed, a plurality of processing gas supply means for supplying a processing gas into the processing chamber, and the processing gas supply means; A plurality of preheating means for heating the processing gas supplied by the supply means before supplying the processing gas into the processing chamber, the temperature in the processing chamber heated by the heating means, and the processing gas heated by the plurality of preheating means Processing condition storage means for storing processing conditions according to processing contents, including the respective temperatures, in-plane uniformity of processing, and uniformity between processing faces, and processing conditions stored by the processing condition storage means A temperature adjusting method for a heat treatment apparatus comprising: a processing means for processing the object to be processed;
When determining whether the processing result processed by the processing means satisfies in-plane uniformity and inter-surface uniformity of the processing stored in the processing condition storage means, and determining that any of these is not satisfied, The temperature of the processing gas heated by the plurality of preheating means is calculated such that the in-plane uniformity and the inter-surface uniformity are satisfied, and the processing gas temperature of the processing condition stored in the processing condition storage means is calculated. A processing gas temperature adjustment step of adjusting the temperature of the processing gas by processing the object to be processed under the changed processing conditions, respectively .
If it is determined that the in-plane uniformity and the inter-surface uniformity are not satisfied in the processing gas temperature adjustment step, the in-plane uniformity and the inter-surface temperature are set as respective temperatures of the processing gas heated by the plurality of preheating means. A temperature adjustment method for a heat treatment apparatus, characterized by calculating a temperature that satisfies uniformity and minimizes a deviation of a value indicating the processing result .   6. The temperature adjustment method for a heat treatment apparatus according to claim 5, wherein the processing content is a film forming process. The processing conditions stored in the processing condition storage means include conditions relating to the average film thickness of the formed thin film,
In the processing gas temperature adjusting step, when it is determined that the processing result processed by the processing unit does not satisfy the condition regarding the average film thickness, the temperature of the processing gas heated by the plurality of preheating units is in-plane uniformity. , Calculate temperatures that satisfy the conditions regarding the inter-surface uniformity and the average film thickness, and change the processing gas temperatures stored in the processing condition storage means to the calculated processing gas temperatures, respectively. The temperature adjusting method for a heat treatment apparatus according to claim 6, wherein the temperature of the processing gas is adjusted by processing the object to be processed under the changed processing conditions.   The temperature of the heat treatment apparatus according to any one of claims 5 to 7, wherein the processing chamber is divided into a plurality of zones, and the heating means can set a temperature for each zone in the processing chamber. Adjustment method. Computer
Heating means for heating a processing chamber containing a plurality of objects to be processed;
A plurality of processing gas supply means for supplying a processing gas into the processing chamber;
A plurality of preheating means provided in the plurality of processing gas supply means, respectively, for heating the processing gas supplied by the processing gas supply means before supplying the processing gas into the processing chamber;
The processing content includes the temperature in the processing chamber heated by the heating means, the temperature of each processing gas heated by the plurality of preheating means, the in-plane uniformity of the processing, and the uniformity between the processing surfaces. Processing condition storage means for storing the corresponding processing conditions;
Processing means for processing the object to be processed under the processing conditions stored by the processing condition storage means;
When determining whether the processing result processed by the processing means satisfies in-plane uniformity and inter-surface uniformity of the processing stored in the processing condition storage means, and determining that any of these is not satisfied, The temperature of the processing gas heated by the plurality of preheating means is calculated such that the in-plane uniformity and the inter-surface uniformity are satisfied, and the processing gas temperature of the processing condition stored in the processing condition storage means is calculated. A processing gas temperature adjusting means for adjusting the temperature of the processing gas by processing the object to be processed under the changed processing conditions, respectively.
To function as,
When the processing gas temperature adjusting means determines that the in-plane uniformity and inter-surface uniformity are not satisfied, the in-plane uniformity and the inter-surface temperature are set as respective temperatures of the processing gas heated by the plurality of preheating means. A program that calculates a temperature that satisfies uniformity and minimizes a deviation of a value indicating the processing result .

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