CN102903653B - Unloading device and unloading method for high-temperature grown wafer - Google Patents
Unloading device and unloading method for high-temperature grown wafer Download PDFInfo
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- CN102903653B CN102903653B CN201210319877.8A CN201210319877A CN102903653B CN 102903653 B CN102903653 B CN 102903653B CN 201210319877 A CN201210319877 A CN 201210319877A CN 102903653 B CN102903653 B CN 102903653B
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Abstract
The invention discloses an unloading device and an unloading method for a high-temperature grown wafer, can realize that vapor phase epitaxy equipment unloads the high-temperature grown wafer under a continuous state. A feeding window is arranged on the side wall of a growing cavity and a blanking cavity is arranged below the growing cavity; an unloading cavity is arranged below the blanking cavity; a discharging window is arranged on the side wall of the unloading cavity; the unloading cavity is internally provided with a bottom hoisting and supporting platform capable of hoisting a tray; the blanking cavity is internally provided with a plurality of groups of small-sized air cylinders; clamps are arranged at the inward end parts of the small-sized air cylinders; and a plurality of induction heating coils are arranged in the blanking cavity. The unloading device and the unloading method for the high-temperature grown wafer are particularly suitable for the current HVPE (Hydride Vapor Phase Epitaxy) vertical system and have the advantages of shortening a process period, improving the production efficiency and accelerating the industrialization.
Description
Technical field
The invention belongs to, particularly one is used for, in semicon industry, being arranged on the loading and unloading window of the material growing device such as vapour phase epitaxial or vapor deposition method; The novel unloading manner that the present invention relates to and device, be suitable for the uninstalling system of the high growth temperature wafer in the material growing device such as vapor phase epitaxy or vapor deposition method of semicon industry.
Background technology
The third generation semi-conducting material that gallium nitride (GaN) is representative, there is broad stopband width, the features such as high-breakdown-voltage, high electron mobility, stable chemical nature, are applicable to making radioresistance, high-frequency, high-power and superintegrated electronic device and blue light, green glow and ultraviolet photoelectron device very much.Have broad application prospects in semiconductor light-emitting-diode (LED), laser diode (LD), ultraviolet detector and high energy high-frequency electron device etc.So in recent years, extremely people from all walks of life's favor, trade investment is continuous.
In multiple GaN substrate growing technology, HVPE(hydride vapor-phase epitaxy) with its two-forty (800 μm/more than h can be reached) growth, low cost, can large area deposition and the remarkable advantage such as uniformity is good, become GaN substrate and grow the first-selection made a breakthrough, current domestic and international most research work all concentrates on this.HVPE growing GaN substrate, the normally thick film of extension 0.5 ~ 1mm on the substrate such as sapphire or GaAs, then by modes such as laser lift-off, grinding or etchings by substrate removal, the GaN polishing obtained is formed Free-standing GaN substrate.
But in HVPE production process, gallium nitride (GaN) is although film growth techniques is more ripe, and growth efficiency is not high, and every platform equipment can only grow a stove each time, and sample need preheating, grown after need slow cooling to discharge the cause such as stress, be difficult to realize industrialization.In most situation, due to the restriction of the design by current charging discharging window, a sample tray can only be placed, cause a lot of time to be wasted in the charging discharging process of product.
Summary of the invention
The present invention is directed to the disappearance of prior art existence, a kind of new technology adopting multistage slow cooling annealing in process is provided, realize the wafer that vapor phase epitaxy equipment unloads high growth temperature under the uninterrupted state of growth technique, be applicable to vapour phase epitaxial growth device systems: to enhance productivity, promote industrialization.
For achieving the above object, the present invention adopts following scheme:
The present invention comprises growth chamber Q1, growth chamber Q1 sidewall is provided with charging window W1, blanking chamber Q2 is provided with below growth chamber Q1, sample tray (T3 in blanking can be loaded in the Q2 of blanking chamber, T4, T5, T6), discharging chamber Q3 is provided with below the Q2 of blanking chamber, discharging chamber Q3 sidewall is provided with discharging window W2, the bottom elevation saddle T9 of height adjustable type tray T10 is provided with in the Q3 of discharging chamber, plural groups small cylinder G3 is provided with in the Q2 of blanking chamber, two the small cylinder G3 often organized are mutually corresponding, often organize two small cylinder G3 levels relative, the inside end of small cylinder G3 is provided with and sample tray (T3 in blanking, T4, T5, T6) the fixture J3 that peripheral shape is corresponding,
Small cylinder G3 and fixture J3 is provided with fixed head B3, more than one small cylinder G3 is provided with outside fixed head B3, the fixture J3 connecting small cylinder G3 is provided with inside fixed head B3, fixed head B3 is fixture J3, small cylinder G3 is synchronously in the Q2 displacement of blanking chamber, load coil (the C1 of plural number is provided with in the Q2 of blanking chamber, C2, C3), load coil (C1, C2, C3) can sample tray (T3 in accommodating blanking in, T4, T5, T6), load coil (C1, C2, C3) the plural blanking sample tray of blanking chamber Q2 (T3 is arranged in, T4, T5, T6) periphery,
Bottom elevation saddle T9 bottom surface connects elevating lever T10, after pallet T1 enters growth chamber Q1 from charging window W1, pallet T1 becomes the sample tray T2 grown, then the sample tray T2 grown falls into blanking chamber Q2 and grows, the sample tray T2 grown after completing becomes sample tray (T3 in blanking, T4, T5, T6), sample tray (T3 in blanking, T4, T5, T6) discharging chamber Q3 is entered, become sample tray T7 to be unloaded in the Q3 of discharging chamber, sample tray T7 to be unloaded falls into discharging chamber Q3, sample tray T7 now to be unloaded shifts out by the discharging window W2 of discharging chamber Q3 the sample tray T8 becoming and taken out.
For reaching above-mentioned purpose, the discharge mechanism of a kind of high growth temperature wafer provided by the invention and unloading manner thereof, adopt following technical scheme, comprise the following steps:
1., fill sample have that thermal coefficient of expansion is little, heat conductivity is good and the pallet T1 of the character such as non-volatile, by charging window W1, sample tray T1 is put in the Q1 of Material growth chamber, as the sample tray T2 grown;
2., close charging window W1 after carry out Material growth, shower nozzle is arranged at growth chamber Q1 top, the source gas of three or five bunches from its spout out, for epitaxial growth;
3. after the sample grown on the sample tray T2, grown completes, elevating lever T10 starts bottom elevation saddle T9 and rises to bottom the sample tray T2 that growing, the mobile sample tray T2 grown drops in the Q2 of blanking chamber, now becomes sample tray in blanking (T3, T4, T5, T6);
4. the fixture J3, often organizing relative small cylinder G3 inner end in the Q2 of blanking chamber inwardly stretches, fixed head B3 is synchronously in the Q2 displacement of blanking chamber fixture J3, small cylinder G3, fixture J3 to fold up in the Q2 of blanking chamber sample tray (T3, T4, T5, T6) in blanking, and fixture J3 clamps sample tray in blanking (T3, T4, T5, T6) and is fixed on and keeps motionless in the Q2 of blanking chamber;
5. put into, again from charging window W1 and new fill the sample tray T1 do not grown, the sample tray T1 putting growth chamber Q1 into overlays sample tray (T3) upper surface in the blanking on Q2 top, blanking chamber, then closes charging window W1, carries out Material growth;
6. the load coil (C1, C2, C3), in the Q2 of blanking chamber, for carrying out insulation and slowly annealing to sample tray in blanking (T3, T4, T5, T6);
7., repetition step like this 1. to step 6., put sample tray T1 several times into, first the sample tray T2 grown put into is down to the bottom of blanking chamber Q2, fixture J3 is sample tray (T3 in the blanking of centre, T4, T5, T6) clamp simultaneously and keep motionless (the sample tray T7 sample tray of the sample tray T2 grown at top and the to be unloaded of bottom is not among clamping), after loosening fixture J3 by small cylinder G3, bottom elevation saddle T9 carries sample tray (T3 in blanking, T4, T5, T6), decline one-level, the sample tray T7 to be unloaded at the sample tray of bottom is not clamped by pneumatic cylinder fixture J3, and along with after bottom elevation saddle T9 drops to discharging chamber Q3, become sample tray T7 to be unloaded,
8., when sample tray T7 to be unloaded in the Q2 of blanking chamber discharges after stress, bottom elevation saddle T9 progressively drops to sample tray T7 to be unloaded in the Q3 of discharging chamber, shifted out by the discharging window W2 of Q3 side, discharging chamber, become the sample tray T8 taken out, sample completes.
The chip device of the unloading high growth temperature of design, entirety as shown in Figure 1.Pallet T1 is the pallet filling sample, and pallet need have that thermal coefficient of expansion is little, heat conductivity is good and the character such as non-volatile.Use graphite to be used as pallet in usual semicon industry, the high purity more than 99.998% of graphite, partial tray surface can plate the coatings such as SiC, increases its hardness and planarization.Charging window W1 is charging window, by it, sample tray T1 is put in the Q1 of Material growth chamber.The sample tray T2 grown is the sample tray grown.Shower nozzle is arranged at growth chamber Q1 top, the source gas of three or five bunches from its spout out, for epitaxial growth.C1 is load coil, and for carrying out insulation and slowly annealing to sample, its detailed construction illustrates in addition in figure 3.Blanking chamber Q2 is blanking chamber, and small cylinder G3 is small cylinder, and fixture J3 folds up sample tray fixture in blanking chamber, and its detailed construction illustrates in addition in fig. 2.Discharging chamber Q3 is discharging chamber, and sample tray T7 to be unloaded is sample tray to be unloaded, and the sample tray T8 taken out is the sample tray T7 taken out from discharging chamber Q3.Bottom elevation saddle T9 is bottom elevation saddle, and pallet elevating lever T10 is the elevating lever be connected with bottom elevation saddle T9, for bearing the weight of all samples pallet, and the sample tray grown progressively is dropped in Q3 discharging chamber, discharging chamber.Discharging window W2 is discharging window.
About charging window W1 charging window and discharging window W2 discharging window, its air-tightness is ensured by other mechanical structure, and this patent does not describe its content in detail.
As shown in Figure 2, small cylinder G3 is small cylinder for cylinder and bottom elevation saddle detailed construction, and fixture J3 is connected with small cylinder G3 and the folder sample tray fixture controlled by it, and fixture has corresponding radian and coefficient of friction.Promoted the fixture on both sides by the cylinders of a pair one-tenth 180 ° inwards, can enter lentamente in blanking chamber, with suitable grip force, sample tray is clamped and is fixed in blanking chamber and keep motionless.In blanking chamber, all cylinder unifications control air pressure by a pressure regulating valve, ensure to clamp sample tray with appropriate grip force, prevent overvoltage from causing sample tray to be out of shape or fracture.Fixed head B3 is fixture, cylinder and the joining steel plate of blanking cavity, and there are the structures such as joint connector, cushion rubber and water-cooled each cylinder, the fixture junction of mounted thereto, ensures the activity of blanking cavity air-tightness and fixture expansion link.Bottom elevation saddle T9 is bottom elevation saddle, and elevating lever T10 is the elevating lever be connected with bottom elevation saddle T9.Bottom elevation saddle T9 lifting can bear the weight of all samples pallet in blanking chamber.The up and down of elevating lever is controlled by a large-scale electric cylinder.Bottom elevation saddle carries the sample tray grown and progressively declines, until discharging chamber.
As shown in Figure 3, C1, C2 and C3 are copper pipe load coils to load coil detailed construction, and they surround the sample tray in blanking chamber, and the lead-in wire of coil is drawn from the blanking cavity back side respectively.When the magnetic field by producing during high-frequency current in coil, in sample tray graphite material, produce eddy current, cause pallet and on put sample heating or insulation, and its temperature value, then control automatically.Loading, uninstall process, constantly carry out so again and again, just can significantly shorten process cycle, enhance productivity.The present invention is applicable to current HVPE(hydride vapor-phase epitaxy especially) in perpendicular system, process cycle can be shortened, enhance productivity.
Accompanying drawing explanation
Fig. 1 is the overall schematic of the embodiment of the present invention;
Fig. 2 is the cross section view of embodiment of the present invention cylinder and bottom elevation saddle;
Fig. 3 is the stereogram of embodiment of the present invention copper pipe load coil and sample tray;
Fig. 4 is the schematic diagram of embodiment of the present invention load sample pallet;
Fig. 5 is the schematic diagram that embodiment of the present invention sample tray declines;
Fig. 6 is the schematic diagram of embodiment of the present invention unloading sample tray.
In figure, parts sign flag is as follows:
Sample tray (T3, T4, T5, T6), load coil (C1, C2, C3), blanking chamber Q2, small cylinder G3, fixture J3, discharging chamber Q3, sample tray T7 to be unloaded, the sample tray T8 taken out, bottom elevation saddle T9, elevating lever T10, discharging window W2, fixed head B3 in pallet T1, charging window W1, growth chamber Q1, the sample tray T2 grown, blanking.
Embodiment
For feature of the present invention, technological means and the specific purposes reached, function can be understood further, resolve the advantages and spirit of the present invention, by below in conjunction with accompanying drawing and embodiment, detailed description of the present invention is further understood.
Native system loads, the process of unloading high growth temperature sample wafer is as follows:
The process of load sample: as shown in Figure 4, puts into growth chamber Q1 the graphite pallet T1 filling sample from charging window W1, is placed in (the sample tray T2 position that Fig. 4 is growing) on bottom elevation saddle T9.Material growth is carried out after closing charging window W1, after having grown, again the decline one-level of bottom elevation saddle T9 under bottom elevation bar T10 transmission.
Fig. 1 is this device overall schematic, and left side is the stereogram placing sample sample tray, and right side is the generalized section that system is faced; Fig. 2 is cylinder and bottom elevation saddle cross section view, and left side is vertical elevation cross-sectional view, and right side is the profile that level is overlooked; Fig. 4 is this device load sample pallet step schematic diagram; Fig. 5 is this device sample tray decline step schematic diagram; Fig. 6 is this device unloading sample tray step schematic diagram.
As shown in Figure 5, contain the sample tray T2 that the sample tray that grown is growing in the diagram, sample tray T3 position in blanking is dropped to bottom elevation saddle T9, the now temperature of load coil C1, C2, C3 Quality control pallet, is incubated contained sample, annealing in process of lowering the temperature.Meanwhile, then from charging window W1 put into and new fill the sample tray do not grown.After the sample tray put into overlay on its sample tray first put into, as shown in sample tray T3 in the sample tray T2 grown of Fig. 5, blanking, the sample tray T2 lower surface grown that in blanking, the upper surface of sample tray T3 is conflicted, in the sample tray T2 grown and blanking, sample tray T3 stacks.Then close charging window W1, carry out Material growth.Repetition like this, puts sample tray several times into, and in the blanking first put into, sample tray (T3, T4, T5, T6) is down to the bottom of blanking chamber Q2, as shown in Figure 6.
The process of unloading sample:
As shown in Figure 6, now, the weight of all samples pallet still by bottom elevation saddle T9 bearing support.Four couples of cylinder small cylinder G3, by being connected with it and the four couples of fixture J3 controlled by it, lentamente sample tray (T3, T4, T5, T6) in the blanking of centre being clamped simultaneously and keeping motionless (the sample tray T7 sample tray of the sample tray T2 grown at top and the to be unloaded of bottom is not among clamping).At the sample tray of bottom sample tray T7 to be unloaded because not clamped by pneumatic cylinder fixture J3, and along with bottom elevation saddle T9 drop to discharging chamber Q3 after just can take out.Then, bottom elevation saddle T9 rises to bottom the sample tray T6 that is in bottom blanking chamber, and after loosening fixture J3 by small cylinder G3, bottom elevation saddle T9 carries sample tray in blanking (T3, T4, T5, T6), decline one-level.Then again according to abovementioned steps repetitive operation, just having grown through native system and the sample tray processed of lowering the temperature, can shift out outside discharging chamber one by one, just can implement progressive unloading.
Loading, uninstall process, constantly carry out so again and again, just can significantly shorten process cycle, enhance productivity.
Example one HVPE loading and unloading wafer process
As shown in Figure 4, the pallet T1 filling sample is put into growth chamber Q1 from charging window W1, be placed in (the sample tray T2 position that Fig. 4 is growing) on bottom elevation saddle T9.Carry out Material growth after closing charging window W1, after having grown, bottom elevation saddle T9 declines one-level under the transmission of bottom elevation bar T10.
The process of load sample, as shown in Figure 5.Contain the sample tray T2 that the sample tray that grown is growing in the diagram, T3 position is dropped to bottom elevation saddle T9, the now temperature of load coil C1, C2, C3 Quality control pallet, is incubated contained sample, annealing in process of lowering the temperature.Meanwhile, then put into from charging window W1 and new fill the sample tray do not grown, after the sample tray put into overlay on its sample tray first put into, as shown in sample tray T2, T3 of growing of Fig. 5.Then close charging window W1, carry out Material growth.Repetition like this, puts sample tray several times into, and the sample tray first put into is down to the bottom of blanking chamber Q2, as shown in Figure 6.
The process of unloading sample, as shown in Figure 6.Now, the weight of all samples pallet still by bottom elevation saddle T9 bearing support.4 couples of cylinder small cylinder G3, by being connected with it and the 4 couples of fixture J3 controlled by it, lentamente sample tray (T3, T4, T5, T6) in the blanking of centre being clamped simultaneously and keeping motionless (the sample tray T7 sample tray of the sample tray T2 grown at top and the to be unloaded of bottom is not among clamping).At the sample tray of bottom sample tray T7 to be unloaded because not clamped by pneumatic cylinder fixture J3, and along with bottom elevation saddle T9 drop to discharging chamber Q3 after just can take out.Then, bottom elevation saddle T9 rises to bottom the sample tray T6 that is in bottom blanking chamber, and after loosening fixture J3 by small cylinder G3, bottom elevation saddle T9 carries sample tray in blanking (T3, T4, T5, T6) decline one-level.Then again according to abovementioned steps repetitive operation, just having grown through native system and the sample tray processed of lowering the temperature, discharging can be shifted out outside window, completing unloading.
Loading, uninstall process, constantly carry out so again and again, just can significantly shorten process cycle, enhance productivity.
About charging window W1 charging window and discharging window W2 discharging window, its air-tightness is ensured by other mechanical structure, and this patent does not describe its content in detail.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (5)
1. the discharge mechanism of a high growth temperature wafer, include: growth chamber (Q1), growth chamber (Q1) sidewall is provided with charging window (W1), it is characterized in that: described growth chamber (Q1) is provided with blanking chamber (Q2) below, in blanking chamber (Q2), sample tray (T3 in blanking can be loaded, T4, T5, T6), blanking chamber (Q2) is provided with discharging chamber (Q3) below, discharging chamber (Q3) sidewall is provided with discharging window (W2), bottom elevation saddle (T9) is provided with in discharging chamber (Q3), plural groups small cylinder (G3) is provided with in blanking chamber (Q2), two small cylinders (G3) often organized are mutually corresponding, and the inside end of small cylinder (G3) is provided with and sample tray (T3 in blanking, T4, T5, T6) fixture (J3) that peripheral shape is corresponding, is provided with the load coil (C1 of plural number in blanking chamber (Q2), C2, C3), described load coil (C1, C2, C3) described sample tray (T3 is surrounded, T4, T5, T6).
2. the discharge mechanism of a kind of high growth temperature wafer according to claim 1, it is characterized in that: described small cylinder (G3) and fixture (J3) are provided with fixed head (B3), fixed head (B3) outside is provided with more than one small cylinder (G3), fixed head (B3) inner side is provided with the fixture (J3) connecting small cylinder (G3), and fixed head (B3) is synchronously in blanking chamber (Q2) displacement fixture (J3), small cylinder (G3).
3. the discharge mechanism of a kind of high growth temperature wafer according to claim 1, it is characterized in that: can sample tray (T3, T4, T5, T6) in accommodating blanking in described load coil (C1, C2, C3), load coil (C1, C2, C3) is arranged in the periphery of the plural blanking sample tray (T3, T4, T5, T6) in blanking chamber (Q2).
4. the discharge mechanism of a kind of high growth temperature wafer according to claim 1, is characterized in that: described bottom elevation saddle (T9) bottom surface connects elevating lever (T10), and two small cylinder (G3) levels often organized are relative.
5. a unloading manner for high growth temperature wafer, is characterized in that, comprises the following steps:
What 1., fill sample has that thermal coefficient of expansion is little, heat conductivity is good and the pallet (T1) of the character such as non-volatile, by charging window (W1), sample tray (T1) is put in Material growth chamber (Q1), as the sample tray grown (T2);
2., close charging window (W1) after carry out Material growth, shower nozzle is arranged at growth chamber (Q1) top, the source gas of three or five bunches from its spout out, for epitaxial growth;
3. after the sample grown on the sample tray (T2), grown completes, elevating lever (T10) starts bottom elevation saddle (T9) and rises to sample tray (T2) bottom grown, the mobile sample tray (T2) grown drops in blanking chamber (Q2), now becomes sample tray in blanking (T3, T4, T5, T6);
4. the fixture (J3), often organizing relative small cylinder (G3) inner end in blanking chamber (Q2) inwardly stretches, fixed head (B3) is synchronously in blanking chamber (Q2) displacement fixture (J3), small cylinder (G3), fixture (J3) folds up sample tray (T3, T4, T5, T6) in blanking chamber (Q2) interior blanking, and fixture (J3) is clamped sample tray in blanking (T3, T4, T5, T6) and is fixed on and keeps motionless in blanking chamber (Q2);
5., put into from charging window (W1) again and new fill the sample tray (T1) do not grown, the sample tray (T1) putting growth chamber (Q1) into overlays sample tray (T3) upper surface in the blanking on blanking chamber (Q2) top, then close charging window (W1), carry out Material growth;
6. the load coil (C1, C2, C3), in blanking chamber (Q2), for carrying out insulation and slowly annealing to sample tray in blanking (T3, T4, T5, T6);
7., repetition step like this 1. to step 6., put sample tray (T1) several times into, first the sample tray (T2) grown put into is down to the bottom of blanking chamber (Q2), fixture (J3) is sample tray (T3 in the blanking of centre, T4, T5, T6) clamp simultaneously and keep motionless, the sample tray (T2) grown at top and sample tray (T7) sample tray to be unloaded of bottom be not among clamping, at the sample tray of bottom sample tray (T7) to be unloaded because not clamped by pneumatic linear actuator fixture (J3), and along with bottom elevation platform (T9), to drop to discharging chamber (Q3) inner, shifted out by the discharging window (W2) of discharging chamber (Q3) side, become the sample tray (T8) taken out, sample completes, then bottom elevation saddle (T9) rises to sample tray (T6) bottom be in bottom blanking chamber, after loosening fixture (J3) by small cylinder (G3), bottom elevation saddle (T9) carries sample tray in blanking (T3, T4, T5, T6), decline one-level.
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| CN101540275A (en) * | 2008-03-17 | 2009-09-23 | 东京毅力科创株式会社 | Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program |
| CN101868853A (en) * | 2007-11-20 | 2010-10-20 | 硅绝缘体技术有限公司 | Transfer of high temperature wafers |
| CN102263047A (en) * | 2011-08-19 | 2011-11-30 | 清华大学 | Wafer thermal buffer stack and method for realizing thermal buffer |
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| CN101868853A (en) * | 2007-11-20 | 2010-10-20 | 硅绝缘体技术有限公司 | Transfer of high temperature wafers |
| CN101540275A (en) * | 2008-03-17 | 2009-09-23 | 东京毅力科创株式会社 | Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program |
| CN102263047A (en) * | 2011-08-19 | 2011-11-30 | 清华大学 | Wafer thermal buffer stack and method for realizing thermal buffer |
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