JP3983481B2 - Substrate processing apparatus and substrate transfer method in substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce operating energy by regulating local temperature and humidity in a substrate transfer space in a substrate processor. SOLUTION: A wafer transfer arms which freely advance or retreat are provided on the upside of a movable transfer base, and further the upside of the transfer base is covered with a cover body, to constitute a case body in which only the front side is opened so as not to prevent advance or retreat of the arms. A pair of gas supply parts are provided inside the case body so as to pinch a wafer holding region on the front side of the arms between left and right sides, and an exhaust ports are formed on the rear side of the wafer holding region on the surface of the transfer base. A regulation part for supplying air with its temperature and humidity regulated is connected to the proximal end of the gas supply part, and when the arm carries a wafer and simultaneously the regulated air is supplied from the gas supply part, as the air is forced to flow to the exhaust ports on the rear side, the arm and wafer are held at appropriate temperature and humidity.

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus for applying, exposing, and developing a resist solution, for example, to various substrates such as a semiconductor wafer and a glass substrate for a liquid crystal display, and a substrate transport method in the substrate processing apparatus.
[0002]
[Prior art]
Since there are a wide variety of processes for forming circuit patterns on the surface of a semiconductor wafer (hereinafter referred to as a wafer) or an LCD substrate of a liquid crystal display, for example, a processing apparatus used for each process is unitized and a space between these processing units is used. For example, a pattern forming apparatus for forming a predetermined resist pattern is configured by combining a transport unit so that the substrate can move.
[0003]
FIG. 11 is a schematic plan view showing a conventional example of such a pattern forming apparatus. A substrate cassette C containing a wafer W is carried in from a cassette station 1A. In the back of the cassette station 1A, there is provided a processing block 1B surrounded by a housing with a wafer W transfer means (not shown) interposed therebetween. The processing block 1B includes a main transfer means 11, called a main arm, and the like. A shelf unit 12 in which a plurality of processing units including cooling are stacked in multiple stages, and a liquid processing unit 13 such as a coating unit or a developing unit are arranged. Further, an exposure apparatus 1D is provided behind the processing unit 1B via an interface unit 1C.
[0004]
The resist application and development process is affected by temperature and humidity in processing conditions such as in-plane uniformity and pattern line width, so there is a downflow of temperature- and humidity-adjusted air in the liquid processing unit. Is formed. On the other hand, the wafer W carried into the liquid processing unit is adjusted in advance to a temperature corresponding to the atmosphere of the liquid processing unit by the cooling plate, but the temperature change from the cooling unit to the liquid processing unit is minimized. Therefore, it is necessary to adjust the atmosphere in the processing block.
[0005]
Usually, the atmosphere in the clean room where the semiconductor manufacturing equipment is placed is adjusted to a predetermined temperature and humidity. By taking this air into the equipment as a down flow through the upper filter, the temperature and humidity inside the equipment are adjusted. Is a predetermined atmosphere. In this case, an atmosphere close to the atmosphere of the liquid processing unit can be created in the processing block by further adjusting the temperature and humidity of the air in the clean room.
[0006]
[Problems to be solved by the invention]
By the way, in order to adjust the temperature and humidity of the air, a cooling means, a heater, a humidifier and the like are necessary. However, since the wafer is enlarged, a large amount of energy is required to adjust the temperature and humidity. The cost will soar. When a plurality of substrate transfer means are provided in a common transfer space, each substrate transfer is performed, for example, when transferring a wafer before development processing on the one hand and transferring a wafer before coating processing on the other hand. For each means, it may be preferable to transfer the wafer in an atmosphere suitable for the processing to be performed. However, in such a case, if the temperature and humidity inside the apparatus are adjusted at once, it is difficult to create an optimum atmosphere for both.
[0007]
The present invention has been made based on such circumstances, and an object of the present invention is to provide a technique that can locally adjust the atmosphere of the substrate transport space in the substrate processing apparatus and that requires less operating energy. .
[0008]
[Means for Solving the Problems]
A substrate processing apparatus according to the present invention comprises: It is adjusted to the optimal temperature atmosphere for the coating process, An application unit for applying a resist solution to the substrate; A temperature different from the temperature in the coating unit. In a substrate processing apparatus provided with a substrate transport means provided in an atmosphere in which a downflow with a clean gas is formed and delivering a substrate to and from the coating unit,
The substrate transport means includes
A movable carrier base having a case body with an opening formed on the front surface;
An arm provided on the transport base so as to hold the substrate and move forward and backward through the opening between a retracted position that fits in the case body and a front position of the case body;
A gas supply unit configured to supply gas toward the substrate holding region of the arm in the case body,
Furthermore, gas is taken in from the atmosphere where the downflow is formed, and the coating unit Same temperature as inside And an adjustment unit that adjusts the temperature and supplies the gas supply unit.
[0009]
According to such a configuration, for example, when the substrate is transported, the arm that holds the substrate is housed in the case body, and the operation of supplying the temperature-adjusted gas only to the inside of the case body can be performed. The atmosphere around the substrate can be adjusted with less energy than when supplying temperature-adjusted air to the entire interior of the apparatus. Moreover, in this invention, you may make it supply the gas which adjusted humidity further in addition to temperature adjustment in the case body.
[0010]
As a specific example of the substrate transport means, a plurality of arms that can be moved forward and backward independently from each other inside the case body and stacked vertically are provided with a gas supply unit, and the substrate holding region of the arm is extended from the gas supply unit. A configuration in which gas is supplied so as to be sandwiched from the left and right sides can be given. In this example, the position of the gas supply unit may be in the vicinity of the tip of the case body, and an exhaust port for sucking the gas may be provided inside the case body. For example, the position of the exhaust port may be the substrate of the arm in the case body. By adjusting to the rear side of the holding area, the adjusted air supplied from the gas supply section crosses the substrate holding area of the arm and goes to the rear side, and an air flow is formed in the case body. That is, since the airflow flows across the substrate holding region so as to sandwich the arms from the left and right, the gas easily flows between the arms even when the arms hold the substrate, and the temperature adjustment effect can be enhanced.
[0011]
Further, the adjustment unit may adjust the gas to a predetermined temperature and to a predetermined humidity. Application unit The substrate transfer space in which the substrate transfer means is placed may be surrounded by a casing and an adjustment unit may be provided outside the casing.
[0012]
Furthermore, the substrate transport means in the substrate processing apparatus according to the present invention includes a surrounding member in which a vertically long opening is formed so as to correspond to the vertical movement region of the transport base, and the opening from the inside of the surrounding member through the opening. A support portion that supports the transport base, an elevating mechanism that is provided in the enclosing member and elevates and lowers the support portion, and an exhaust means that exhausts the atmosphere in the enclosing member to the atmosphere where the substrate is placed, With
A configuration may be adopted in which the gas sucked from the exhaust port is exhausted from the exhaust means through an exhaust path communicating with the inside of the support portion from the case body.
[0013]
The substrate transfer method in the substrate processing apparatus according to the present invention is as follows. It is adjusted to the optimal temperature atmosphere for the coating process, An application unit for applying a resist solution to the substrate; A temperature different from the temperature in the coating unit. In a substrate processing apparatus provided with a substrate transport means provided in an atmosphere in which a downflow with a clean gas is formed and delivering a substrate to and from the coating unit,
A step of transferring a substrate to and from the coating unit by an arm of the substrate transfer means;
The arm holding the substrate is retracted and accommodated in the case body of the substrate transfer means, and in this state, the case body is moved to transfer the substrate, and then the arm is advanced to be positioned in front of the case body. A process of making a state of delivering,
Taking in gas from outside the atmosphere in which the downflow is formed, the coating unit Same temperature as inside And adjusting the temperature to supply a gas to the substrate in the case body. In the present invention, the gas supplied to the substrate in the case body may be one in which humidity is adjusted in addition to temperature adjustment.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of a substrate processing apparatus according to the present invention will be described below by taking a pattern forming apparatus for forming a predetermined resist pattern on a substrate as an example. FIG. 1 is a plan view showing this pattern forming apparatus, and FIG. 2 is a perspective view thereof. In the figure, reference numeral 11 denotes a cassette station for carrying in / out a cassette C in which, for example, 13 wafers W serving as substrates are hermetically stored. The cassette station 11 has a placement section 12 on which the cassette C is placed; An opening / closing part 13 provided on the wall surface in front of the mounting part 12 and a delivery means 14 for taking out the wafer W from the cassette C via the opening / closing part 13 are provided. A processing unit S1 surrounded by a casing 20 is connected to the back side of the cassette station 11, and the processing unit S1 includes a shelf unit 21 in which heating / cooling units are sequentially arranged from the front side, 22 and 23 and main transfer means 3 (3A, 3B) which are substrate transfer means for transferring the wafer W between the processing units including a coating / developing unit described later are alternately arranged. Yes.
[0015]
That is, the shelf units 21, 22, 23 and the main transfer means 3 (3A, 3B) are arranged in a line in the front-rear direction when viewed from the cassette station 21, and an opening for transferring a wafer (not shown) is provided at each connection portion. The wafer W is formed so that it can freely move in the processing unit S1 from the shelf unit 21 on one end side to the shelf unit 23 on the other end side. The main transfer means 3 (3A, 3B) includes one surface portion on the shelf units 21, 22, 23 arranged in the front-rear direction as viewed from the cassette station 21, and a right-side liquid processing unit 2 (2A, 2A, described later). 2B) is placed in a space surrounded by a partition wall 30 composed of one surface portion on the side and a back surface portion forming one surface on the left side.
[0016]
A portion of the main transport main stage 3 (3A, 4B) where the shelf units 21, 22, 23 are not connected, for example, the right side surface portion described above, is a liquid processing unit 2 (2A, 2B). Reference numerals 24 and 25 denote temperature / humidity adjustment units including, for example, a temperature or humidity adjusting device, a pump, a duct, and the like.
[0017]
In the liquid processing unit 2 (2A, 2B), for example, as shown in FIG. 2, a coating device or a developing device is stored on a storage portion 26 that forms a space for supplying a chemical solution such as a coating solution (resist) or a developing solution. The container 27 is configured to be stacked in a plurality of stages, for example, five stages, and a side surface on the main transfer means 3 (3A, 3B) side of the processing container 27 is used for wafer transfer described later when the wafer W is loaded / unloaded. A transfer port 28 is formed so that the arm can enter. In addition to the heating unit and the cooling unit, for example, the shelf units 21, 22, and 23 include a wafer transfer unit, a hydrophobic treatment unit, and the like, which are assigned, for example, in 10 stages on the upper and lower sides.
[0018]
An FFU (fan filter unit) (not shown) is provided at the top of the processing unit S1 (housing 20), and an exhaust means (not shown) is provided at the bottom so that clean air flows as a downflow. . Further, an exposure apparatus S3 is connected to the back side of the shelf unit 23 in the processing unit S1 via an interface unit S2. The interface unit S2 includes a transfer means 29 and a buffer cassette C0, and transfers the wafer W among the processing unit S1, the exposure apparatus S3, and the buffer cassette C0. Although not shown in FIGS. 1 and 2, a gate valve or a shutter (not shown) is provided between each unit to which the wafer W is transferred, so that each space can be kept airtight. ing.
[0019]
Here, the configuration of the main transport unit 3 (3A, 3B), which is the main part of the present embodiment, will be described by taking the main transport unit 3A as an example. Prior to detailed description, the general outline will be described with reference to FIGS. 1 and 2. The main transfer means 3 A supports the transfer unit main body 5 for holding and delivering the wafer W and the tip of the transfer unit main body 6. And a horizontal support portion 31 configured to move up and down integrally. A vertically long and box-shaped surrounding member 4 (4A, 4B) is provided on both sides of the support portion 31, and the support portion 31 is configured to be lifted and lowered by a driving portion described later. Yes.
[0020]
Next, details of the main transport unit 3A will be described. First, the enclosing members 4 (4A, 4B) will be described with reference to the perspective view shown in FIG. 3, but these enclosing members 4 (4A, 4B) have the same shape and are arranged symmetrically when viewed from the transport unit body 5. Therefore, here, the surrounding member 4B is omitted, and only the surrounding member 4A will be described. The enclosing member 4A is formed with a slit-like first opening 41 in the vertical direction on the side surface facing the enclosing member 4B (not shown) so as to correspond to the moving region of the support portion 31, that is, the transfer region in the vertical direction of the wafer W. If the direction in which the first opening 41 is formed is the front, the first chamber D1 on the front side having, for example, the first opening 41 by the partition wall 42, and the second on the rear side. It is divided into room D2.
[0021]
The first chamber D1 is provided with a guide shaft 43 which is a guide means for the support portion 31. The guide shaft 43 meshes with an engaging portion 32 having a concave cross section formed at an end portion of the support portion 31, and guides this in a freely movable manner. It is supposed to be. The first chamber D1 is provided with a drive mechanism 44 including pulleys 44a and 44b provided in the vicinity of the ceiling and the bottom surface, and a belt 44c wound around the pulley 44a and 44b. Is fixed integrally therewith. Therefore, when the belt 44c is rotationally driven by a driving force of a motor (not shown), the support portion 31 is moved up and down along the guide shaft 43 along with the movement. The drive mechanisms 44 of the surrounding members 4A and 4B are configured to rotate in synchronization. In the second room D2, fans 45 that rotate horizontally are arranged in multiple stages, for example, at equal intervals, and an exhaust port 46 is formed on the bottom surface. Although details will be described later, the fan 45 and the exhaust port 46 are provided to exhaust the atmosphere on the first chamber D1 side to the outside of the surrounding member 4A through a second opening (not shown) formed in the partition wall 42. It constitutes exhaust means.
[0022]
Next, the transport unit body 5 will be described with reference to FIGS. 3, 4, and 5. As shown in FIG. 3, the transport unit body 5 is provided on a lift 33 whose tip is fixed to the support unit 31 so as to be able to rotate θ around a vertical axis via a rotation mechanism 34. It moves up and down integrally with 31. On the surface of the plate-shaped transport base 51 that forms the bottom surface of the transport section main body 5, as shown in FIG. Is formed. Further, guide grooves 53 extending in the X direction are formed on both side surfaces of the transport base 51 so as to be parallel, for example.
[0023]
Reference numeral 54 denotes an arm support unit that supports three arms 55 (55a, 55b, 55c) serving as substrate transfer means above the transport base 51 and is selected from these arms 55 (55a, 55b, 55c). It is configured to advance and retreat the product along the guide groove 53. The position of the arm 55 (55a, 55b, 55c) shown in FIG. 4 is the retracted position, and the position of the exhaust port 52 described above is surrounded by the horseshoe-shaped portion of the arm 55 (55a, 55b, 55c) in the retracted position. It is formed on the rear side of the wafer holding region 56.
[0024]
Further, when the wafer W is delivered, the arm support portion 54 located at the rear end of the transfer base 51 in FIG. 4 advances to the vicinity of the front end of the transfer base 51, for example, one arm 55 (55a, 55b, 55c) The front wafer holding area 56 enters the delivery destination of the wafer W such as the liquid processing unit 2, for example.
[0025]
Above the transfer substrate 51, in order to partition the wafer holding area 56 from the outside when the arm 55 (55a, 55b, 55c) is retracted to have a predetermined temperature and humidity atmosphere, the arm support portion 54 and the arm 55 ( A cover body 6 is provided to cover 55a, 55b, 55c). The transport base 51 and the cover body 6 constitute a case body 60. The case body 60 is opened on the front side so that the arms 55 (55a, 55b, 55c) can advance and retreat, and the arms 55 (55a, 55a, 55). 55b, 55c) is enclosed, and on its inner wall surface, for example, a panel-like gas supply unit 61 (61a) is sandwiched between the left and right sides of the wafer holding region 56 of the arm 55 (55a, 55b, 55c) in the retracted position, for example. 61b). The gas supply unit 61 (61a, 61b) has a length before and after the wafer holding region 56 so that gas can be supplied to the wafer holding region 56 of each arm 55 (55a, 55b, 55c). In addition, a large number of gas supply holes 62 are formed according to the height position of each stage of the arm 55 (55a, 55b, 55c).
[0026]
Further, the rear end of the gas supply unit 61 (61a, 61b) is piped through a fan 64 and a particle removal cleaning filter 65 from an adjustment unit 63 provided at an upper portion of the processing unit S1 (housing 20), for example. For example, a gas supply pipe 66 made of a flexible tube is connected. For example, the adjustment unit 63 is for taking in air in the factory (external air), adjusting the temperature thereof, and supplying the air into the case body 60. For example, the intake air is once cooled to 0 ° C. or lower and dehumidified. The humidifier is humidified to a predetermined humidity and heated to a predetermined temperature with a heater. The air thus adjusted is supplied by the fan 64, cleaned by the cleaning filter 65, and supplied into the case body 60.
[0027]
The exhaust port 52 described above is for sucking the internal atmosphere of the case body 60 to form an airflow flowing from the front side to the rear side, and is connected to the exhaust port 52 with reference to FIGS. 5 and 6 below. The exhaust side will be described. As shown in the drawing, on the downstream side of the exhaust port 52, a flow path 71 that communicates with the inside of the transport base 51, the rotation mechanism 34, and the lifting platform 33 is formed, and this flow path 71 is formed in the support portion 31. Connected to the hollow portion 72. Although not described in FIG. 3, the hollow portion 72 is formed so as to penetrate the inside of the support portion 31 in the longitudinal direction, and the hole portion 73 that forms both ends of the hollow portion 72 faces the partition wall 42 in the engaging portion 32. It is formed on a vertical surface. Thus, since the exhaust port 52 is connected to the first room D1 via the flow path 71 and the hollow portion 72, when exhaust is performed in the first room D1, the suction at the exhaust port 52 is simultaneously performed. It has become. Further, as shown in FIG. 6, the partition wall 42 is formed with a slit-like second opening 74 extending vertically so as to correspond to the above-described lifting region of the support member 41, for example, so that the second chamber When exhaust is performed in D2, the atmosphere on the first room D1 side is sucked through the second opening 74. The flow path 71 and the hollow portion 72 correspond to the exhaust path in the claims.
[0028]
Next, the operation of the above embodiment will be described. First, when the cassette C is carried into the cassette station 11, the lid of the cassette C is removed together with the opening / closing part 13, and the wafer W is taken out by the transfer means 14. Then, the wafer W is transferred from the transfer means 14 to the main transfer means 3A via the transfer unit (unit on which the mounting table is placed) in the shelf unit 21. For example, the resist solution is applied by a coating apparatus in the liquid processing unit 2A. Is applied to the exposure apparatus S3 through the transfer unit of the shelf unit 22, the transfer unit of the main unit 3B, the transfer unit of the shelf unit 23, and the transfer unit 29 of the interface unit S2. Is done. Before applying a resist to the wafer W, for example, a hydrophobizing process and a cooling process are performed in processing units included in the shelf units 21, 22, and 23. After applying a resist, a heating process and a cooling process are performed. Done. After the exposure, the wafer W is transferred to the main transfer means 3A through the reverse path, and developed by, for example, a developing unit in the liquid processing unit 2A, thereby forming a predetermined resist pattern. Before and after development, pre-processing and post-processing such as heating and cooling are performed in the shelf units 21, 22, and 23.
[0029]
Here, paying attention to the transfer unit main body 5 in the main transfer means 3 (3A, 3B), the operation during transfer of the wafer W will be described. First, in the enclosing member 4 (4A, 4B) in the main transport means 3 (3A, 3B), the fan 45 is rotated to exhaust air before the transport body 5 is raised and lowered. Specifically, in the second room D2, for example, a downward flow toward the exhaust port 46 is formed by increasing the rotational speed of the fan 45 on the lower stage side than on the upper stage side, and the first room is formed by this downward flow. The atmosphere on the D1 side is sucked to the second room D2 side through the second opening 74. As a result, an air flow from the first opening 41 to the second opening 74 is formed in the first chamber D1, so that, for example, when the support 31 is moved up and down, particles generated from the drive mechanism 44 are transferred to the wafer. Moving toward the front side of the first opening 41, which is the W conveyance area, is suppressed.
[0030]
At the same time, the air flow, that is, the suction force in the second opening 74 also reaches the hole 73 of the support portion 31, and the exhaust inside the transport unit body 5 is exhausted from the exhaust port 52 through the hollow portion 72 and the flow path 71. . As described above, since all the directions other than the front side are blocked, the air flow from the front side toward the exhaust port 52 is formed by exhausting from the exhaust port 52. It becomes.
[0031]
At this time, the wafer holding area 56 in the case body 60 is constantly supplied with air whose temperature and humidity have been adjusted from the adjusting unit 63, for example, and this air passes above the transfer substrate 51 and is placed on each stage of the wafer. An air flow is formed along the W surface, and is sucked into the exhaust port 52 across the wafer transfer region 56 as shown in FIG. 7, and as described above, each exhaust port 46 of the surrounding member 4 (4A, 4B). To the outside of the pattern forming apparatus.
[0032]
That is, the wafer W held by the arm 55 (55a, 55b, 55c) is transferred while being maintained in an atmosphere adjusted to a constant temperature and humidity. For example, since the in-plane uniformity of the resist film thickness is greatly affected by temperature and humidity, the atmosphere in the liquid processing unit 2 (2A, 2B) including the coating unit and the developing unit is optimal for temperature and humidity. However, the atmosphere in the case body 60 is adjusted separately by the main transfer means 3A and 3B so that the atmosphere corresponding to such an atmosphere, for example, the same atmosphere as each of the liquid processing units 2A and 2B is obtained. Is done.
[0033]
According to the above-described embodiment, the case body 60 is provided on the arm 55 (55a, 55b, 55c) for transporting the wafer W, the temperature and humidity of the atmosphere therein are adjusted, and the wafer W is transported to the processing unit. Since the atmosphere around the wafer W is adjusted before and after, the wafer W is loaded into the liquid processing unit 2 (2A, 2B) and then the resist is applied and developed on the wafer W immediately. Compared to adjusting the temperature and humidity of the entire substrate processing apparatus, it is only necessary to adjust the atmosphere in a narrow space, so the energy required for adjusting the atmosphere (energy required for air cooling and heating, energy for the humidifier, etc.) Etc.) and the cost can be kept low. Further, since the air is supplied so as to be sandwiched from the side of the arm 55 (55a, 55b, 55c), each of the arms 55 (55a, 55b, 55c) also holds the wafer W. There is also an advantage that air easily flows between the arms and the effect of temperature and humidity control is high.
[0034]
As described above, since the transport unit body 5 can form different atmospheres for the main transport units 3A and 3B, for example, even when different atmospheres are set for the liquid processing units 2A and 2B, the main transport unit 3 (3A , 3B), it is possible to form an optimum atmosphere for the processing to be performed on the wafers W to be transferred by each of the transfer unit main bodies 5 and to operate them simultaneously.
[0035]
By the way, in the transfer unit body 5, for example, when the arm 55a is used for receiving the heated wafer W1, and the arms 55b and 55c are used for receiving the cooled wafer W2, the wafer W2 held on the arm 55b is used. On the other hand, the heat of the hot wafer W1 held by the arm 55a may be transmitted.
[0036]
Therefore, in order to prevent this problem, for example, a shield plate 57 may be provided between the arm 55a and the arm 55b as shown in FIG. 8, but in the present embodiment, the wafer W1 is configured in such a configuration. , W2 as well as the shielding plate 57 can be cooled.
[0037]
On the other hand, the exhaust port 52 provided in the case body 60 forms an air flow across the wafer holding region 56 by the air supplied from the gas supply unit 61, so that the entire surface of the arm 55 and the wafer W is kept at a uniform temperature. be able to. Further, for suction of the gas at the exhaust port 52, the particles in the surrounding member 4 (4A, 4B) are provided in the surrounding member 4 (4A, 4B) in order to prevent the particles in the surrounding member 4 (4A, 4B) from jumping out to the lifting / lowering region side of the transport unit body 5. Since the suction force of the fan 45 is used, the particles collected by the transfer unit body 5 are also discharged from the surrounding member 4 (4A, 4B), and the wafer W can be transferred in a cleaner environment. There is also. The effect is further enhanced by purifying the air whose temperature and humidity are adjusted as described above.
[0038]
In addition, the position of the gas supply part 61 (61a, 61b) in the conveyance part main body 5 is not limited to the position shown in the said embodiment, For example, in 2nd Embodiment shown in FIG.9 and FIG.10. It can also be done. In this embodiment, the gas supply unit 81 is provided, for example, in the vicinity of the tip of the ceiling of the cover body 6, and the shape thereof is an arc shape along the outer periphery of the wafer W as shown in FIG. A plurality of gas supply holes 82 are formed along. Further, the hole 82 is provided rearward and obliquely downward as shown in FIG. 10, and the temperature-humidity-adjusted air supplied from the gas supply hole 82 crosses the wafer holding region 56 toward the exhaust port 52. The same effects as those of the first embodiment can be obtained. The same applies to the position of the exhaust port 52. For example, when it is provided on the transfer base 51, it may be directly under the wafer holding area 56, or formed on the inner wall surface of the cover body 6 on the rear side of the wafer holding area, for example. You may make it do.
[0039]
In the above-described embodiment, both the temperature and the humidity are adjusted for the air supplied into the case body 60. However, for example, in order to improve the in-plane uniformity of the resist film thickness formed on the wafer surface, the temperature change Only one of them may be adjusted so that only the temperature adjustment is performed before and after the process affecting the humidity, and only the humidity adjustment is performed before and after the process affecting the humidity change.
[0040]
Further, it is not always necessary to supply air into the case body 60 as in the above-described embodiment. For example, the control unit monitors the advance and retreat of the arm 55 (55a, 55b, 55c), and the arm 55 (55a , 55b, 55c) may be configured such that when the wafer W is received by moving forward and backward, an operation signal is issued from the controller to the fan 64, and adjusted air is supplied into the case body 60. Further, the rotation speed of the fan 64 may be controlled to change the air supply speed.
[0041]
In the above embodiment, the pattern forming apparatus for forming a predetermined resist pattern on the surface of the semiconductor wafer has been described as an example in the present embodiment. However, the present invention is not limited to this, for example, applying organic silica to the substrate surface. This may be applied to an apparatus for forming a glass film by heating, and the substrate is not limited to a wafer but may be an LCD substrate.
[0042]
【The invention's effect】
As described above, according to the present invention, the substrate transfer space in the substrate processing apparatus can be locally adjusted, and the operating energy can be reduced.
[Brief description of the drawings]
FIG. 1 is a plan view showing an embodiment of a substrate processing apparatus according to the present invention.
FIG. 2 is a perspective view showing an embodiment of a substrate processing apparatus according to the present invention.
FIG. 3 is a perspective view showing an overall structure of a main transport unit 3A.
FIG. 4 is a perspective view for explaining the structure of a transport unit main body 5;
FIG. 5 is a schematic longitudinal sectional view for explaining an exhaust path of an exhaust port 52 provided in the transport section main body 5;
FIG. 6 is a schematic cross-sectional view for explaining an exhaust path of an exhaust port 52 provided in the transport section main body 5;
FIG. 7 is an operation explanatory diagram in the embodiment.
FIG. 8 is a longitudinal sectional view for explaining another embodiment of the substrate processing apparatus according to the present invention.
FIG. 9 is a plan view for explaining another embodiment of the substrate processing apparatus according to the present invention.
FIG. 10 is a longitudinal sectional view for explaining another embodiment of the substrate processing apparatus according to the present invention.
FIG. 11 is a plan view illustrating a substrate processing apparatus according to a conventional invention.
[Explanation of symbols]
W wafer
S1 processor
Two liquid processing unit
21, 22, 23 Shelf unit
3 Main transport means
31 Support member
32 engaging part
4 Enclosing members
41 First opening
42 Bulkhead
45 fans
5 Conveyor body
51 Transport base
52 Exhaust vent
55 arms
6 Cover body
60 case body
61 Gas supply section
63 Adjustment section
71 flow path
72 Hollow part
74 Second opening

Claims (10)

An atmosphere that is adjusted to an optimum temperature atmosphere for the coating process and performs a resist solution coating process on the substrate, and an atmosphere in which a downflow is formed by a clean gas having a temperature different from the temperature in the coating unit. In a substrate processing apparatus comprising: a substrate transport unit that delivers a substrate to and from the coating unit.
The substrate transport means includes
A movable carrier base having a case body with an opening formed on the front surface;
An arm provided on the transport base so as to hold the substrate and move forward and backward through the opening between a retracted position that fits in the case body and a front position of the case body;
A gas supply unit configured to supply gas toward the substrate holding region of the arm in the case body,
And an adjustment unit that takes in gas from outside the atmosphere in which the downflow is formed, adjusts the gas to the same temperature as that in the coating unit , and supplies the gas to the gas supply unit. Substrate processing apparatus.   The substrate processing apparatus according to claim 1, wherein the adjustment unit adjusts the gas to a predetermined temperature and to a predetermined humidity.   The substrate processing apparatus according to claim 1, wherein the arms are configured as a plurality of arms that can be moved forward and backward independently of each other and are provided one above the other.   The gas supply unit is provided in the case body, and gas is supplied so as to be sandwiched from one of the left and right sides or from both sides toward the substrate holding region of the arm in the case body. A substrate processing apparatus according to claim 1.   The substrate processing apparatus according to claim 1, wherein the gas supply unit is provided in the vicinity of the tip of the case body so as to supply gas to the rear side.   6. The substrate processing apparatus according to claim 1, wherein the case body is provided with an exhaust port for sucking the gas supplied from the gas supply unit.   The substrate processing apparatus according to claim 6, wherein the exhaust port is provided at a rear side of the substrate holding region of the arm in the case body. The substrate transfer means includes a surrounding member in which a vertically long opening is formed so as to correspond to a vertical movement region of the transfer substrate, and a support portion that supports the transfer substrate from the inside of the surrounding member through the opening. And an elevating mechanism provided in the enclosing member and elevating and lowering the support part, and an exhaust means for exhausting the atmosphere in the enclosing member to the atmosphere where the substrate is placed,
The substrate processing apparatus according to claim 6, wherein the gas sucked from the exhaust port is exhausted by the exhaust unit through an exhaust path communicating with the inside of the support portion from the case body. An atmosphere that is adjusted to an optimum temperature atmosphere for the coating process and performs a resist solution coating process on the substrate, and an atmosphere in which a downflow is formed by a clean gas having a temperature different from the temperature in the coating unit. In a substrate processing apparatus comprising: a substrate transport unit that delivers a substrate to and from the coating unit.
A step of transferring a substrate to and from the coating unit by an arm of the substrate transfer means;
The arm holding the substrate is retracted and accommodated in the case body of the substrate transfer means, and in this state, the case body is moved to transfer the substrate, and then the arm is advanced to be positioned in front of the case body. A process of making a state of delivering,
Taking gas from outside the atmosphere in which the downflow is formed, adjusting the temperature to the same temperature as in the coating unit , and supplying the gas to the substrate in the case body, Substrate transport method in a substrate processing apparatus.   The substrate transport method in the substrate processing apparatus according to claim 9, further comprising a step of supplying a gas whose humidity is further adjusted in addition to temperature adjustment to the substrate in the case body.

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