JP3966884B2 - Substrate processing apparatus, substrate processing method, and substrate manufacturing method - Google Patents

Description

  The present invention processes a substrate to be processed, such as a semiconductor wafer or a substrate to be processed such as a glass substrate used in a liquid crystal display (LCD), for example, processing with a processing solution, for example, an organic solvent such as a resist solution, SOG, or the like. Substrate processing apparatus and substrate processing for applying an inorganic agent, processing with a developer after exposure, processing for supplying a cleaning solution to perform processing such as processing, or processing for heating a substrate to be processed Regarding the method.

  In a main process for manufacturing a substrate to be processed, for example, a glass substrate or a semiconductor wafer used for a liquid crystal display (LCD), as a first step, for example, a cleaning liquid such as a chemical solution or pure water is applied to the substrate. A cleaning process such as a brush is brought into contact with the substrate while being supplied (cleaning process), and the substrate is moved, for example, rotated and shaken to dry once, and subjected to a heat treatment at a predetermined temperature to perform a dehydration process. (Drying process) is performed, and thereafter, the substrate is subjected to predetermined gas treatment, for example, HMDS treatment at a predetermined temperature in order to make the substrate hydrophobic, or the substrate is irradiated with ultraviolet rays (UV irradiation), etc. Process (hydrophobization process), and then apply a predetermined film, for example, a photoresist film, to the hydrophobicized substrate by moving the substrate in a predetermined atmosphere, such as rotational movement. (Application step), a predetermined energy is applied to the photoresist film applied to the substrate at a predetermined temperature by applying energy such as heating energy and / or energy such as EB irradiation to the predetermined temperature. It is so-called curing (curing process), exposing a photoresist film corresponding to a predetermined circuit pattern (exposure process), and then supplying a developing solution to the substrate for development (development process). Substrates are manufactured by a method of forming a circuit pattern by photolithography.

Conventionally, as a system for manufacturing such a substrate, for example, as disclosed in Japanese Patent Application Laid-Open No. 2-144333, a linear transport is provided by a transport mechanism provided in a common linear transport path. It is carried out by a processing system in which a plurality of processing units for processing a substrate are arranged on both sides of the path, and the substrate is transported to the plurality of processing units by a transport mechanism provided in a linear transport path. Yes.
Japanese Patent Laid-Open No. 2-144333

  However, in recent industrial development, a large substrate of 300 mm is becoming the mainstream in the future for substrates to be processed, for example, semiconductor wafers, and the size of the substrate is steadily increasing in the future. In addition, the demand for large-sized displays on LCD substrates is accelerating, and the size of the substrates is increasing. At present, such LCD substrates have come up to enormous ones with a side as long as 1 m, and processing systems for processing these substrates are naturally becoming ever larger. Such an increase in the size of the processing system seriously affects the investment in facilities such as a clean room in which the processing system is arranged. That is, the footprint of the processing system becomes extremely large.

  In addition, an increase in the size of the processing system reduces the transfer time between processing units because the transfer mechanism for transferring the substrate to be processed in the processing system cannot be increased beyond a predetermined transfer speed due to problems such as chipping. This will have a significant impact on the throughput of substrate processing. In addition, since it may take a predetermined time or more to reduce the transfer time between processing units, etc., it is necessary to transfer to a processing unit that performs processing in the next process after a predetermined processing unit. If the time cannot be achieved, the processing process will not be able to achieve the target specifications, or the yield will be reduced.

  In addition, it was possible to construct a system flexibly with a certain amount of substrate size by configuring the processing unit that processes the substrate to be processed as one unit and combining multiple units to configure the system. However, if the size of the substrate exceeds a predetermined value, the material distance between the processing unit units also increases, leading to a decrease in transport time between processing units, which has a significant effect on substrate processing throughput. I will give it.

  As one of the solutions to such an increase in the size of the processing system, for example, it is conceivable to stack a plurality of processing units in the vertical direction in order to reduce the footprint. However, the increase in the size of the substrate to be processed not only increases the footprint of the processing system, but also increases the size in the height direction in order to achieve processing uniformity of the substrate to be processed. In facilities such as clean rooms where processing systems are installed, for example, an atmosphere of downflow is formed, and there are restrictions on the height of the facility, and there is a limit even if multiple processing units are stacked in the vertical direction. For this reason, in terms of number, it is extremely difficult to stack a plurality of processing units in the vertical direction as in the past.

  The present invention has been made in view of such circumstances, and is intended to improve the yield rate in substrate processing, improve the throughput of substrate processing, suppress the decrease in the current throughput, and configure the apparatus of the minimum unit. Accordingly, a substrate processing apparatus and a substrate processing method that can improve the degree of freedom in the arrangement configuration of the apparatus, improve the downsizing of the entire apparatus without causing problems in the apparatus configuration, and reduce the footprint of the entire apparatus are provided. The purpose is to do.

  The substrate processing apparatus of the present invention has a roller transport mechanism configured to be able to transport a substrate to be processed by a roller, and has a roller transport unit having a loading / unloading port for loading and unloading the substrate to be processed, and disposed above the roller transport unit. A temperature adjustment processing unit that performs temperature adjustment processing on the substrate to be processed, and a heat treatment unit that is disposed above the temperature adjustment processing unit and that heat-treats the substrate to be processed at a temperature higher than the temperature adjustment processing unit. A first processing target substrate processing unit; a transporting unit configured to transport the processing target substrate and having a loading / unloading port for loading and unloading the processing target substrate; and a processing target substrate disposed above the transporting unit. A temperature control processing unit that performs a temperature control process on the substrate, and a second heat processing unit that is disposed above the temperature control processing unit and that heat-treats the substrate to be processed at a temperature higher than the temperature control processing unit. A processing substrate processing section; And a roller disposed between each of the first processed substrate processing units and the second processed substrate processing unit and outside each processed substrate processing unit. A roller transport mechanism of the transport unit and / or a first transport mechanism configured to be capable of transporting the substrate to be processed with respect to the transport mechanism of the transport unit of the second substrate processing unit to be processed is configured to be free-running. It is characterized by that.

  In the substrate processing apparatus of the present invention, it is preferable that the substrate transport apparatus includes a second transport mechanism that is configured to be able to deliver the substrate to be processed from the first transport mechanism and that transports the substrate to be processed by itself.

  In the substrate processing apparatus of the present invention, it is preferable that the roller transport unit includes a processing liquid supply mechanism for supplying a processing liquid to the substrate to be processed.

  The substrate processing apparatus of the present invention preferably includes a gas supply mechanism that supplies a gas to the substrate to be processed and an exhaust mechanism that exhausts the gas from the gas supply mechanism.

  The substrate manufacturing method of the present invention is characterized in that a substrate to be processed is manufactured using the substrate processing method.

  The substrate manufacturing method of the present invention is characterized in that a substrate to be processed is manufactured using the substrate processing apparatus.

  According to the present invention, it is possible to increase the yield rate in substrate processing, increase the throughput of substrate processing, suppress the decrease in the current throughput, and configure the block configuration of the device in the smallest unit, so that the arrangement of the devices is free. The size of the entire apparatus can be improved and the footprint of the entire apparatus can be reduced without causing problems in the apparatus configuration. Therefore, it is possible to improve the throughput of the substrate processing by reducing the substrate transport distance or the transport process, etc., and by making the block configuration of the smallest unit, the atmosphere management of the substrate can be further controlled with respect to the substrate. The influence can be suppressed, and the yield of substrate processing can be improved. It can contribute to industrial development.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a plan view showing a substrate processing apparatus according to a first embodiment of the present invention, for example, a resist coating and developing apparatus for performing resist processing on a glass substrate for LCD, and FIGS. 4 is a side view showing the inside of the main part in the apparatus, FIG. 4 is a plan view showing the main part in the apparatus, and FIG. 5 is a side view showing the main part in the apparatus.

  This resist coating and developing processing apparatus 1 mounts at least one substrate container, for example, a cassette C, which is configured to be capable of accommodating a plurality of substrates to be processed, for example, glass substrates G for LCDs. A cassette placement portion 2 configured to be freely placed along one direction, and a glass substrate G that is carried in or out of the cassette C of the cassette placement portion 2 and a predetermined parallel to the placement direction of the plurality of cassettes C A cassette station unit 90 configured at least with a transfer mechanism arrangement unit 5 that arranges a transfer mechanism 11 configured to be capable of self-propelling in the direction Y1, and a predetermined process on the glass substrate G, for example, cleaning the glass substrate G A cleaning processing unit 21 that performs processing, a resist coating processing unit 22 that performs processing by applying a predetermined processing liquid, such as a resist solution, to the glass substrate G, and a resist film are formed. A glass substrate G is disposed between each processing unit and at least one processing arrangement unit such as a development processing unit 23 for supplying a predetermined processing solution, for example, a developing solution to the glass substrate G for processing. A transport mechanism 12, 13, 14 configured to be capable of transporting the substrate G and not self-propelled, and at least one of these transport mechanisms 12, 13, 14 or a transport mechanism of the cassette station unit 90 A substrate transport mechanism 16 serving as a transport mechanism configured to be capable of self-running in a predetermined direction Y2 that is configured so as to be able to deliver the glass substrate G from 11 and that is substantially orthogonal to the self-running direction Y1 of the transport mechanism 11 of the cassette station unit 90 is disposed. A processing station unit 91 composed of a transport mechanism placement unit 6 and a glass substrate G directly or indirectly with the transport mechanism 13 of the processing station unit 91. A transfer mechanism 15 that is configured to be freely transferred and configured to be free-running in a predetermined direction Y3 that is substantially orthogonal to the self-running direction Y2 of the transfer mechanism 15 of the processing station unit 91 is disposed and the glass substrate G is directly or directly from the transfer mechanism 15. An exposure apparatus 10 that indirectly exposes a predetermined circuit pattern to another apparatus, for example, a resist film formed on the glass substrate G, and an interface station section 92 as a transfer mechanism arrangement section 7 that is configured to be delivered. Its main part is composed.

  Next, the configuration of the cleaning processing unit 21 which is one of the processing arrangement units in the processing station unit 91 will be described with reference to FIG. The cleaning processing unit 21 includes a plurality of processing units including a processing unit that performs predetermined processing, for example, liquid processing. That is, one of the processing units supplies the cleaning liquid to the glass substrate G from a cleaning liquid nozzle 31 as a cleaning liquid supply mechanism that supplies the glass substrate G with a cleaning liquid as a predetermined liquid processing. In addition, the cleaning unit 30 configured to remove dust or the like as an unnecessary object attached to the glass substrate G by contacting the cleaning brush 32 configured to be rotatable with respect to the glass substrate G, and other processing units As one example, the glass substrate G is vacuum-sucked and held, and the cleaning liquid adhering to the surface of the glass substrate G by a rotating centrifugal force is shaken off by a chuck 36 as a holding mechanism configured to be rotatable and vertically movable. Shower as a gas supply mechanism configured to be freely dried and further supplying dry gas to the glass substrate G on the chuck 36 through a plurality of holes to promote drying. The glass substrate G can be transported between the drying promoting unit 35 and the drying promoting unit 35 and the cleaning unit 30 (one direction, that is, the next processing step is performed from the cleaning unit 30). In the direction of the drying accelerating portion 35 to be carried out (conveyed substantially horizontally in a direction substantially parallel to the self-running direction Y2 of the conveying mechanism 15) The glass substrate G can be delivered directly or indirectly through the roller substrate and the roller conveyance mechanism 38 serving as a conveyance mechanism configured to convey the glass substrate G by point or surface contact. Has been.

  Although the chuck 36 as the holding mechanism holds the glass substrate G by vacuum suction, a mechanical chuck that supports the back surface or the side surface of the glass substrate G may be used. Moreover, although it may deliver directly from the conveyance mechanism 11 and the conveyance mechanism 12 with respect to the roller conveyance mechanism 38, as one method of performing delivery indirectly, the back surface of the glass substrate G once in the position above the roller conveyance mechanism 38 is used. Alternatively, as a support mechanism (not shown) for supporting the side surface or the like, a method of supporting the glass substrate G by a plurality of support pins and then simultaneously lowering the plurality of pins to transfer the glass substrate G to the roller portion of the roller transport mechanism 38 is considered. It is done. This is because, for example, when the plurality of roller portions of the roller transport mechanism 38 are not rotated independently, if a plurality of glass substrates G exist in the cleaning processing unit 21, the plurality of roller portions rotate. At the same time, it may move during the process, or may cause a transport error when directly transferring from the transport mechanism 11 and the transport mechanism 12 during such movement, or the rotation of the plurality of roller units may stop. This is because the waiting time for the transfer may affect the processing throughput. Therefore, the support mechanism may exist as a standby mechanism that temporarily waits for the glass substrate G, or may exist in a section in the middle of the roller transport mechanism 38. When the plurality of roller portions of the roller transport mechanism 38 are independently rotated, the above problem is unlikely to have a significant influence.

  Next, the configuration of the transport mechanism 11 of the cassette station unit 90 will be described. As described above, the transport mechanism 11 itself has a predetermined direction Y1 parallel to the mounting direction of the plurality of cassettes C. The transport mechanism 11 is provided with a plurality of stacked arms 41 as a holding mechanism for holding or supporting the glass substrate G. Each of these arms 41 is configured to be independently extendable and contractible (X1 direction), and the base 40 of these arms 41 collectively includes a plurality of arms 41 in the vertical direction (Z1 direction) and the rotation direction ( It is configured to be movable in the (θ1 direction).

  Next, an ultraviolet treatment for irradiating ultraviolet rays, for example, excimer UV, etc., is performed on the upper side of the cleaning processing unit 21, that is, on one side of the upper portion, in order to remove unnecessary substances attached to the surface of the glass substrate G, such as organic substances. The first heat system processing unit 25 for processing the glass substrate G with a predetermined heat is disposed on the other side above the cleaning processing unit 21. The thermal processing unit 25 includes a heat processing unit 28 including an adhesion processing unit 26 that performs a hydrophobic treatment on the glass substrate G, a dehydration bake unit 27 that performs dehydration baking on the glass substrate G, and the like. A temperature adjustment processing unit 29 is disposed so as to substantially set the glass substrate G processed by a predetermined processing unit of the heat processing unit 28 to a temperature at the time of processing in the next process.

  In addition, although the temperature control processing part 29 is arrange | positioned in the part nearest to the washing | cleaning process part 21 in the thermal processing part 25, and the heat processing part 28 is arrange | positioned thereabove, the glass normally set in the temperature control processing part 29 is arranged. Since the temperature at the time of processing the substrate G in the next process is lower than the temperature in the processing unit in the heat processing unit 28, for example, approximately room temperature, the heat of the heat processing unit 28 affects the cleaning processing unit 21. In order to prevent the temperature adjustment processing unit 29 from being arranged, the arrangement position is also taken into consideration as a buffer function for suppressing the influence of heat. Furthermore, in order to suppress the thermal effect on the cleaning processing unit 21, the processing unit that performs processing at a higher temperature also in the heat processing unit 28 should be arranged at a higher position, that is, at a position farther from the cleaning processing unit 21. preferable. Further, in the present embodiment, one temperature adjustment processing unit 29 is provided, but if there are a plurality of temperature control processing units 29, the thermal influence on the cleaning processing unit 21 is further suppressed.

  Next, the transport mechanism 12 is arranged on the side of the cleaning processing unit 21 facing the transport mechanism 11 of the cassette station section 90 described above. Similar to the transport mechanism 11 described above, the transport mechanism 12 includes a plurality of stacked arms 41 as a holding mechanism that holds or supports the glass substrate G. These arms 41 are each configured to be independently extendable and contractible (X1 direction), and the base 40 of these arms 41 collectively includes a plurality of arms 41 in a vertical direction (Z1 direction) and a rotational direction ( (θ1 direction) is configured to be movable, and the cleaning processing unit 21, the adhesion processing unit 26, the heating processing unit 28 of the dehydration baking unit 27, and the temperature control processing unit 29 are connected to the respective processing units via the general inlet / outlet ports 39. On the other hand, the glass substrate G is configured to be freely loaded and unloaded.

  Next, the configuration of the resist coating processing unit 22 which is another one of the processing arrangement units in the processing station unit 91 will be described with reference to FIG. The resist coating processing unit 22 includes a plurality of processing units including a processing unit that performs predetermined processing, for example, liquid processing. These processing units, for example, apply a resist solution to the glass substrate G from a resist solution supply nozzle 61 as a resist solution supply mechanism that supplies the resist solution to the glass substrate G as a predetermined liquid treatment on the glass substrate G. The resist solution on the glass substrate G is formed over the entire processing surface of the glass substrate G by the centrifugal force generated by the rotation of the rotating mechanism 62 that is configured to be able to hold and rotate the glass substrate G. In this resist film forming process, either one of the upper cup 63 and the lower cup 64 is moved by a mechanism (not shown) and is in contact with the other to maintain a certain degree of airtightness in the cup. And either one of the upper cup 65 and the lower cup 66 is moved by a mechanism (not shown) and comes into contact with the other to contact the upper cup 65 and the lower cup. 6 is configured to be set to a certain degree of reduced pressure by an exhaust mechanism, for example, a vacuum pump 67, and to some extent with respect to the resist solution forming film on the glass substrate G processed by the resist coating unit 51. A vacuum drying unit 52 for drying in a reduced pressure state, and a solvent liquid supply nozzle 68 as a solvent supply mechanism using a solvent solution, such as thinner, for the resist film on the periphery of the glass substrate G processed by the vacuum drying unit 52. And an unnecessary resist film removing section 53 that removes the resist film at the peripheral edge of the glass substrate G.

  Further, the glass substrate G is sequentially applied to the processing units of the resist coating unit 51, the reduced pressure drying unit 52, and the unnecessary resist film removing unit 53 (in one direction, that is, in the direction in which the next processing step is performed, substantially the same as the self-running direction Y2 of the transport mechanism 15). The transport mechanism 79 configured to be transported substantially horizontally in the parallel direction (Y5 direction) will be described with reference to FIG. In the transport mechanism 79, arms 69 and 70 as holding mechanisms for supporting or holding the back surface or side surface of the glass substrate G are arranged at positions facing the glass substrate G. It is configured to move close to and away from each other (in the direction Y5 in the figure) and move up and down so that each processing unit and the transport mechanism 12 and the glass substrate G can be delivered freely, and the glass substrate G is held by the arms 69 and 70. It is configured to move substantially horizontally.

  Next, as shown in FIG. 3, a second heat processing unit 71 for processing the glass substrate G with a predetermined heat is disposed above the resist coating processing unit 22, that is, on one side of the upper part. ing. The thermal processing unit 71 includes a heat processing unit 28 including a dehydration baking unit 27 that performs dehydration baking on the glass substrate G disposed in the first thermal processing unit 25 described above, A temperature adjustment processing unit 29 for setting the glass substrate G processed in a predetermined processing unit of the heat processing unit 28 to a temperature at the time of processing in the processing in the resist coating processing unit 22 which is processing of the next process is laminated. Arranged. In other words, the pre-processing of the processing in the resist coating processing unit 22 is performed on the glass substrate G by the first thermal processing unit 25 and the second thermal processing unit 71.

  The unit configurations of the first thermal processing unit 25 and the second thermal processing unit 71 may be similar, but the resist coating processing unit 22 is more preferable than the cleaning processing unit 21. However, the unit of the processing unit 71 of the second heat system is more than the total amount of heat of processing in each processing unit arranged in the processing unit 25 of the first heat system. The total heat quantity of the heat in the process is configured to be lower, or arranged in the second heat system processing unit 71 than the number of temperature control processing units 29 arranged in the first heat system processing unit 25 The number of temperature control processing units 29 to be increased is increased, or the number of temperature control processing units 29 interposed between the cleaning processing unit 21 and the heat processing unit 28 is larger than that of the resist coating processing unit 22 and the heat processing unit 28. The number of temperature control processing units 29 interposed between the two is increased. The unit structure of the second thermal system of the processing unit 71 may be composed of only the temperature regulation processing unit 29.

  Further, on the other side above the resist coating processing unit 22, a plurality of resist films formed on the glass substrate G processed in the resist coating processing unit 22 are processed at a predetermined temperature to cure the resist film. The heat treatment unit 76 constituted by the heat treatment unit 75 and the like, and the glass substrate G treated by the predetermined treatment unit 75 of the heat treatment unit 76 are substantially equal to the temperature at the time of processing in the processing of the next process or the temperature in the apparatus A temperature control processing unit 77 for setting is stacked and arranged, and a third thermal processing unit 72 is configured. Note that the temperature adjustment processing unit 77 is interposed between the resist coating processing unit 22 and the heat processing unit 76 for the same reason as described above.

  Next, the above-described transport mechanism 12 carries the glass substrate G into the resist coating processing unit 22 from the first general entrance / exit 39 of the resist coating processing unit 22, and with respect to the heating processing unit 28 and the temperature control processing unit 29. The glass substrate G can be carried in and out through a general inlet / outlet 39 provided. The operation of the transport mechanism 12 is basically as described above.

  Next, the glass substrate G processed in the resist coating processing unit 22 is carried out from the loading / unloading port 39 of the resist coating processing unit 22 or is respectively applied to the heating processing unit 75 or the temperature adjustment processing unit 77 of the heating processing unit 76. A transport mechanism 13 for generally loading and unloading the glass substrate G through the loading / unloading port 39 will be described with reference to FIG. Note that the glass substrate G processed in the resist coating processing unit 22 is provided with a loading / unloading port 39 of the resist coating processing unit 22, a heating processing unit 75 of the heating processing unit 76, or a loading / unloading port 39 of the temperature control processing unit 77. The coating unit 51, the reduced pressure drying unit 52, and the unnecessary resist film removing unit 53 are configured to be disposed in the direction of arrangement of the processing units, that is, in a direction substantially orthogonal to the self-running direction Y4 of the transport mechanism in the resist coating processing unit 22. Yes.

  Accordingly, the transport mechanism 13 is disposed so as to be positioned in a direction substantially orthogonal to the self-running direction Y4 of the transport mechanism in the resist coating processing unit 22, and the transport mechanism 13 is the same as the transport mechanism 12 described above. A plurality of arms 41 as a holding mechanism for holding or supporting the glass substrate G are provided. These arms 41 are each configured to be independently extendable and contractible (X2 direction), and the base 40 of these arms 41 collectively includes a plurality of arms 41 in the vertical direction (Z2 direction) and the rotation direction ( It is configured to be movable in the (θ2 direction).

  Further, the transport mechanism 13 is configured so that the glass substrate G can be carried into the development processing unit 23 from the first general entrance / exit 39 of the development processing unit 23, and further, one of the upper side of the development processing unit 23, that is, one on the upper side. As a fourth thermal processing unit 73 disposed on the side and processing the glass substrate G with a predetermined heat, the glass substrate G processed with the exposure apparatus 10 described later is heated at a predetermined temperature. Between the heat processing unit 75 and the heat processing unit 75 and the development processing unit 23, the glass substrate G processed by the heat processing unit 75 so that the heat of the heat processing unit 75 does not affect the development processing unit 23. The glass substrate G is configured to be able to be carried in and out through each general inlet / outlet 39 of the temperature adjustment processing unit 77 that is set to substantially the same temperature as the processing temperature in the development processing unit 23, for example, room temperature.

  The processing unit groups of the fourth thermal processing unit 73 and the second thermal processing unit 71 are arranged in the direction in which the general inlet / outlet 39 oppose each other, and further the development processing unit 23 and the resist coating processing unit 22. The general entrance / exit 39 is also arranged to oppose.

  Next, the configuration of the development processing unit 23 will be described with reference to FIG. The development processing unit 23 includes a plurality of processing units including a processing unit that performs predetermined processing, for example, liquid processing. That is, one of the processing units supplies a developing solution for supplying a developing solution to the glass substrate G as a predetermined liquid treatment for a resist film on which a predetermined circuit pattern is formed by the exposure apparatus 10 for the glass substrate G. A developer supply unit 80 that supplies a developer to the glass substrate G from a developer nozzle 81 as a mechanism, and a developer that is stacked on the glass substrate G by the developer supply unit 80 as one of the other processing units. The development reaction of the liquid is allowed to proceed, and after the development reaction is completed, a rinsing liquid such as pure water is supplied from the rinsing liquid supply nozzle 83 to the glass substrate G to remove the developing liquid on the glass substrate G (from the developing liquid to the rinsing liquid) And a rinsing liquid supply unit 82 that accelerates the drying of the glass substrate G by a drying acceleration mechanism (not shown) such as dry air.

  Further, the glass substrate G can be freely transported between the developer supply unit 80 and the rinse solution supply unit 82 in the development processing unit 23 (a rinse solution for performing the next processing step in one direction, that is, from the developer supply unit 80 side). Glass substrate G from the transport mechanism 13 and the transport mechanism 14 described later through the general entrance / exit 39, respectively, in the direction of the supply unit 82 and transported substantially horizontally in a direction substantially parallel to the self-running direction Y2 of the transport mechanism 15. And a transfer mechanism 85 using a roller as a transfer mechanism configured to be able to transfer the glass substrate G by point or surface contact.

  In addition, although conveyance by a roller is described in the conveyance mechanism 85 in the development processing unit 23 or the conveyance mechanism 38 in the cleaning processing unit 23, the present invention is not limited to this. , 70 may constitute a conveyance mechanism, or the conveyance mechanism 79 in the resist coating processing unit 22 may be replaced with a conveyance mechanism using a roller. If the substrate can be conveyed as described above, the type of the mechanism is possible. It is not intended to limit.

  Next, as shown in FIG. 6, a fifth thermal processing unit 74 is provided above the development processing unit 23, that is, on the one end side that is not the arrangement side of the upper fourth thermal processing unit 73. The glass substrate G processed in the development processing unit 23 is processed at a predetermined temperature to dry and cure the resist film on the glass substrate G, and the glass substrate G processed in the heat processing unit 100 The temperature adjustment processing unit 101 for substantially setting the temperature at the time of processing in the processing of the next process or the temperature in the apparatus is laminated, and decolorization of development with respect to the glass substrate G below the temperature control processing unit 101 An ultraviolet irradiation unit 102 for irradiating i-line ultraviolet rays (for example, an electromagnetic energy processing unit, for example, an EB processing unit for irradiating an electron beam in the case of processing a semiconductor wafer) serves as an ultraviolet processing unit for performing processing. Vignetting, the lower portion of the ultraviolet irradiation unit 102 inspection processing unit 103 to inspect the resist film formed on the glass substrate G is provided.

  Next, the transport mechanism 14 is provided with a plurality of stacked arms 41 as a holding mechanism for holding or supporting the glass substrate G similarly to the transport mechanism 13 described above. These arms 41 are configured to be independently extendable and contractible (X3 direction), and the base 40 of these arms 41 collectively includes a plurality of arms 41 in the vertical direction (Z3 direction) and the rotation direction ( The glass substrate G is configured to be movable in the direction (θ3) and is processed in the development processing unit 23, and is unloaded from the loading / unloading port 39 of the development processing unit 23, or the heating processing unit 100, the temperature control processing unit 101, the ultraviolet irradiation unit 102, or the like. The glass substrate G can be generally inserted into and removed from each of the inspection processing units 103 via respective loading / unloading ports 39.

  Next, the substrate transport mechanism 16 shown in FIG. 1 will be described with reference to the perspective views of FIGS. As shown in FIG. 1, the substrate transport mechanism 16 is made of glass at a delivery position (P1, P2, P3 in the figure) for delivering the glass substrate G to and from the plurality of transport mechanisms 12, 13, 14 in the processing station 91. The substrate G is configured to be freely transferred (TP), and the transport mechanism 11 of the cassette station unit 90 is also configured to be able to transfer the glass substrate G (TP).

  As shown in FIG. 7, the substrate transport mechanism 16 includes transport mechanisms 11, 12 including a peripheral edge holding member 120 that holds the side or peripheral edge of the glass substrate G and a back surface holding member 121 that holds the back surface side. After the 13 or 14 arm 41 moves in the X direction and is positioned on the substrate transport mechanism 16, the side or peripheral edge of the glass substrate G is held and raised so as not to interfere with the arm 41 as shown in FIG. 8. A peripheral edge holding member 125 configured to move up and down, and a rear surface holding member configured to protrude from the slit portion 122 of the arm so as not to interfere with the arm 41 and hold the back side of the glass substrate G and to be movable up and down. 126 is configured to receive the glass substrate G on the arm 41 freely.

  Further, the substrate transport mechanism 16 is configured such that after the arm 41 of the transport mechanism 11, 12, 13 or 14 moves in the X direction and retracts from the substrate transport mechanism 16, as shown in FIG. When holding the side or peripheral edge of the glass substrate G when the holding member 126 is lowered, a peripheral edge holding member 128 and a back surface holding member 129 for holding the back side of the glass substrate G are provided.

  Further, as shown in FIG. 10, the peripheral edge holding member 128 of the substrate transport mechanism 16 includes a drop portion 130 having a plurality of angles (θ1, θ2) as a positioning mechanism of the glass substrate G. It is possible to prevent the position of the glass substrate G from shifting even during movement of 16. Such a positioning mechanism has an effect of suppressing the displacement of the position even when the transport mechanism 11, 12, 13 or 14 is transferred to and from the arm 41. Further, the peripheral edge holding member 120 of the arm 41 of the transport mechanism 11, 12, 13, or 14 is also provided with such a mechanism, and is configured to perform the operation during transport of the glass substrate G or during delivery more reliably. . The substrate transport mechanism 16 is provided with a temperature control mechanism (not shown) so that the glass substrate G can be set to a predetermined temperature, for example, a predetermined temperature suitable for transport or substantially the same temperature as the processing temperature of the temperature control processing unit. It is configured.

  Next, the interface station unit 92 will be described with reference to FIG. The interface station unit 92 is provided with a plurality of stacked arms 41 as holding mechanisms for holding or supporting the glass substrate G in the same manner as the transport mechanism 11 described above, and these arms 41 can be extended and retracted independently. Further, the base of these arms 41 is configured such that the plurality of arms 41 can be moved together in the vertical direction (Z direction) and the rotation direction (θ direction), and the base is Y1 of the transport mechanism 11. A transport mechanism 15 configured to be movable in the Y3 direction parallel to the direction is provided.

  Further, the transport mechanism 15 is configured to be able to transfer the glass substrate G directly or indirectly between the transport mechanism 13 of the processing station unit 91 and the exposure apparatus 10.

  Next, FIG. 11 shows dotted line portions shown between the processing units in the respective processing units shown in the drawing of the cleaning processing unit 21 in FIG. 2, the resist coating processing unit 22 in FIG. 3, and the development processing unit 23 in FIG. A description will be given with reference to FIG. For example, a mechanism as shown in FIG. 11 or FIG. 12 is provided between the processing units inside each of the processing units 21, 22, and 23 as an atmosphere blocking mechanism in order to suppress atmospheric interference with each processing unit, for example. (Here, an example in which the glass substrate G is conveyed by rollers will be described.)

  That is, an upper shutter 152 and a lower shutter 153 are provided as an opening / closing mechanism in the atmosphere blocking mechanism 150 shown in FIG. 11, and silicon is used as a seal member on a contact surface of one side, for example, the upper shutter 152 of the lower shutter 153. Rubber 154 and the like are disposed. Further, the upper shutter 152 and the lower shutter 153 are configured to be relatively close to each other (Z5 in the drawing), and when the upper shutter 152 and the lower shutter 153 come into contact with each other, the atmosphere between the processing units can be cut off. It is composed.

  In addition, in the atmosphere blocking mechanism 150 shown in FIG. 12, a blocking medium such as a gas, for example, clean air, or a liquid, such as pure water, is supplied from a blocking medium supply mechanism 156 via an opening / closing mechanism, for example, a valve 157. It is comprised so that it may discharge in curtain shape from 158. Further, a blocking medium receiving portion 159 for collecting the blocking medium discharged from the nozzle 158 is provided at a position below the nozzle 158, and the blocking medium of the blocking medium receiving portion 159 passes through an opening / closing mechanism such as a valve 160. The blocking medium recovery mechanism 161 is configured to be recovered. Further, the blocking medium recovery mechanism 161 is configured to be freely circulated by returning at least a part of the recovered blocking medium to the blocking medium supply mechanism 156 via the circulation path 162 from the merits such as cost reduction.

  Regarding the operation of the atmosphere blocking mechanism 150, when the glass substrate G passes through the atmosphere blocking mechanism 150 by the transport mechanisms 38, 79, 85, for example, when using the shutters 152, 153, an opening / closing or blocking medium is used. For example, in the case of using a liquid, it is necessary to configure to stop the discharge. However, for example, when gas is used in the blocking medium, it is often unnecessary to stop the operation. That is, for example, when the atmosphere blocking mechanism 150 is arranged between the cleaning unit 30 and the drying promoting unit 35 in the cleaning processing unit 21, the cleaning unit 30 has been processed if, for example, gas is used in the blocking medium. Since the cleaning liquid on the glass substrate G is blown off, a secondary effect that the processing time of the drying promoting unit 35 in the subsequent processing can be shortened can be generated. In this case, as a point to be particularly noted, when the cleaning liquid on the glass substrate G is blown off by the blocking medium to be mist, measures are taken so that the mist is not processed or adhered to the glass substrate G after processing by the drying accelerating unit 35. There is a need. As one of such measures, a plurality of atmosphere blocking mechanisms 150 may be disposed in the conveyance direction of the glass substrate G. From the above, it is necessary to appropriately select the atmosphere blocking mechanism 150 according to the arrangement environment or the front and rear processing environments.

  Next, the loading / unloading port 39 provided in each processing unit will be described with reference to FIGS. 13 and 14. The loading / unloading port 39 provided in each processing unit has a sealing member, for example, O, around the loading / unloading port 39 on the inner wall 165 in each processing unit as shown in FIG. A ring 166 is provided, and the opening / closing mechanism shown in FIG. 14, for example, the shutter mechanism 167 moves from the standby position to a predetermined operation, for example, moves in the Z0 direction and further moves in the X0 direction and contacts the O-ring 166 to carry in and out. 39 is configured to be openable and closable.

  Further, the loading / unloading port 39 provided with an opening / closing mechanism that can freely open and close each processing unit is usually configured to form a downflow of air from a clean room through a filter or the like in the apparatus. One of the main purposes is to prevent the interference of the atmosphere. For example, when the heat-treated atmosphere of the heat treatment unit 75 flows into the resist coating processing unit 22, the resist coating process easily changes the thickness of the coating film due to the influence of heat, so that the processing yield of the glass substrate G is generated. Resulting in. Further, for example, it is necessary to take measures to prevent mist such as cleaning liquid from the cleaning processing unit 21 from splashing out of the cleaning processing unit 21 and adhere to the glass substrate G during transportation. In order to solve such a problem, when such a problem occurs, the opening / closing mechanism of the loading / unloading port 39 is effective.

  Further, for example, the atmospheric pressure inside the resist coating processing unit 22 is set to a substantially higher pressure than the atmospheric pressure outside the resist coating processing unit 22, and the atmosphere outside the resist coating processing unit 22 is set inside the resist coating processing unit 22. If the other processing unit does not have a special influence, the opening / closing mechanism of the loading / unloading port 39 of the resist coating processing unit 22 may not be particularly provided.

  An example of the procedure of the processing steps of the glass substrate G in the resist coating and developing treatment apparatus 1 configured as described above will be described below. First, at least one cassette C is transported to the cassette placement unit 2 of the cassette station unit 90 by human or mechanical transport, for example, by an AGV robot, and an unprocessed glass substrate G placed in the cassette placement unit 2 is transferred. The glass substrates G are unloaded from the cassette C storing a plurality of sheets to the transfer device 11 one by one, and the unloaded glass substrates G are directly loaded into the ultraviolet processing unit 24, where pretreatment for cleaning is performed in the ultraviolet processing unit 24. .

  Next, the glass substrate G processed in the ultraviolet processing section 24 is transported by the transport device 11 to the cleaning processing section 21 located below the ultraviolet processing section 24 via the general entrance / exit 39 (opening / closing mechanism of the general entrance / exit 39). The same applies hereinafter) The same is applied to the transport mechanism 38 using rollers in the cleaning processing section 21, and then the glass substrate G is processed by the cleaning section 30 by the rotational driving of the rollers of the transport mechanism 38. It is transported approximately horizontally to the position and subjected to a cleaning process.

  Next, the glass substrate G that has been subjected to the cleaning process is transported substantially horizontally to the processing position of the drying accelerating unit 35 by the rotational drive of the rollers of the transport mechanism 38 (the atmosphere blocking mechanism disposed in the middle of the transport path has been described above. (The same applies hereinafter) and a drying process is performed. The glass substrate G that has been subjected to the drying process is transported substantially horizontally to a delivery position where the glass substrate G is delivered directly or indirectly to the transport mechanism 12 by rotation of the rollers of the transport mechanism 38, and then transported. The mechanism 12 transports the cleaning substrate 21 to the outside of the cleaning processor 21 through the general inlet / outlet 39 of the cleaning processor 21, and the transport mechanism 12 then dehydrates and bake units of the heating processor 28 that places the glass substrate G above the cleaning processor 21. 27 or the temperature control processing unit 29 above the resist coating processing unit 22 is conveyed through a general entrance / exit 39, and the glass substrate G is subjected to dehydration processing in the dehydration bake unit 27.

  Next, the glass substrate G that has been subjected to the dehydration process in the dehydration bake unit 27 is carried out of the dehydration bake unit 27 by the transport mechanism 12 and is transferred to the temperature adjustment processing unit 29 below the dewatering bake unit 27 by the transport mechanism 12. A process of cooling to a predetermined temperature and maintaining the predetermined temperature in the temperature adjustment processing unit 29 is performed.

  Next, the glass substrate G maintained at a predetermined temperature in the temperature control processing unit 29 is carried out of the temperature control processing unit 29 by the transport mechanism 12 and is subjected to an adhesion process at a position above the temperature control processing unit 29 by the transport mechanism 12. It is transported to the unit 26 and subjected to a hydrophobizing process (HMDS process) in the adhesion processing unit 26.

  Next, the glass substrate G processed in the adhesion processing unit 26 is heated by the transport mechanism 12 so as to be positioned above the temperature adjustment processing unit 29 or the resist coating processing unit 22 disposed below the adhesion processing unit 26. A predetermined temperature in the selected temperature adjustment processing unit 29 that is selectively conveyed to any one of the temperature adjustment processing units 29 of the processing unit 29, for example, a temperature in processing in the resist coating processing unit 22 that performs processing in the next process. And a process of setting the temperature to a predetermined temperature, for example, approximately room temperature, is performed.

  Next, the glass substrate G maintained at a predetermined temperature in the temperature control processing unit 29 is unloaded from the temperature control processing unit 29 by the transport mechanism 12 and is positioned below the temperature control processing unit 29 by the transport mechanism 12. The glass substrate G is transferred to the coating processing unit 22 via the general entrance / exit 39 and directly or indirectly transferred to the transporting mechanism 79 in the resist coating processing unit 22. It is transported approximately horizontally to the position, and a resist solution coating process is performed.

  Next, the glass substrate G on which the resist coating process has been performed in the resist coating unit 51 is transported substantially horizontally to the processing position of the vacuum drying unit 52 by the transport mechanism 79, and is subjected to a drying process by reducing the pressure. . The glass substrate G subjected to the decompression process is transported substantially horizontally to the processing position of the unnecessary resist film removing unit 53 by the transport mechanism 79, and a process of removing the unnecessary portion of the resist film formed on the peripheral edge of the glass substrate G is performed. Applied. The glass substrate G from which the unnecessary portion of the resist film has been removed is transported approximately horizontally by the transport mechanism 79 to a delivery position where the glass substrate G is delivered directly or indirectly to the transport mechanism 13, and then the transport mechanism. 13 is transferred to the outside of the resist coating processing unit 22 through the general entrance / exit 39 of the resist coating processing unit 22.

  Next, the transport mechanism 13 transports the glass substrate G to the selected heat processing unit 75 in the heat processing unit 76 disposed above the resist coating processing unit 22, and the glass substrate G is heated in the heat processing unit 75. Processing is performed.

  Next, the glass substrate G that has been heat-treated in the heat-treatment unit 75 is suitable for a predetermined temperature, for example, for conveyance, in a temperature adjustment processing unit 77 that is disposed at a position below the heat-treatment unit 75 by the conveyance mechanism 13. The temperature is cooled to substantially the same temperature as the ambient temperature in the transport mechanism arrangement unit 6 or a temperature in the vicinity thereof, and a process of maintaining a predetermined temperature is performed.

  Next, the glass substrate G processed in the temperature control processing unit 77 is carried out of the temperature control processing unit 77 by the transport mechanism 13 and then directly or indirectly to the transport mechanism 15 of the interface station unit 92. Hand over the glass substrate G. Further, the transport mechanism 15 delivers the glass substrate G directly or indirectly to the exposure apparatus 10, and a predetermined circuit pattern is exposed on the resist film of the glass substrate G in the exposure apparatus 10.

  Next, the glass substrate G subjected to the exposure process in the exposure apparatus 10 is directly or indirectly delivered from the exposure apparatus 10 to the transport mechanism 15 of the interface station unit 92, and the transport mechanism 15 is further transferred to the transport mechanism 13. The glass substrate G is handed over directly or indirectly.

  Next, the glass substrate G is transported by the transport mechanism 13 to the heat processing unit 75 positioned above the development processing unit 23 and subjected to heat treatment after exposure. The glass substrate G processed in the heat processing unit 75 is moved by the transport mechanism 13 at a position below the heat processing unit 75 or a temperature control processing section 77 positioned above the resist coating processing section 22. The predetermined temperature within the selected temperature adjustment processing unit 77 and, for example, the temperature in the processing in the development processing unit 23 that performs the next process, is approximately the same as the temperature in the selected temperature adjustment processing unit 77. Alternatively, it is cooled to a temperature in the vicinity thereof, and a process of setting to a predetermined temperature, for example, approximately room temperature, is performed.

  Next, the glass substrate G set at a predetermined temperature in the temperature control processing unit 77 is unloaded from the temperature control processing unit 77 by the transport mechanism 13 and is developed below the temperature control processing unit 77 by the transport mechanism 13. It is conveyed to the processing unit 23 via the general entrance / exit 39 and is directly or indirectly transferred to the conveyance mechanism 85 in the development processing unit 23, and then the glass substrate G is transferred to the processing position of the developer supply unit 80 by the conveyance mechanism 85. And the developer is supplied to the glass substrate G, whereby the liquid buildup process of the developer is performed on the glass substrate G.

  Next, the glass substrate G on which the developer liquid has been deposited in the developer supply unit 80 is transferred to the glass substrate G on which the developer has been deposited at the processing position of the rinse liquid supply unit 82 by the transport mechanism 85. After the chemical reaction with the resist film by the developer is completed, the substrate is transported approximately horizontally so that it does not fall off from the glass substrate G, and is supplied and replaced with a rinsing solution. A drying process is performed. The glass substrate G that has been treated with the rinsing liquid is transported substantially horizontally to a delivery position where the glass substrate G is directly or indirectly delivered to the transport mechanism 14 by the transport mechanism 85. The glass substrate G is carried out of the development processing unit 23 through the general entrance / exit 39 of the development processing unit 23.

  Next, the transport mechanism 14 transports the glass substrate G to the ultraviolet processing unit 102 disposed above the development processing unit 23, and the glass substrate G is subjected to decoloring processing in the ultraviolet processing unit 102. Thereafter, the glass substrate G is transported to the heat treatment unit 100 by the transport mechanism 14 and subjected to heat treatment, and then the glass substrate G is transported to the temperature adjustment processing unit 101 by the transport mechanism 14 and subjected to cooling processing.

  Next, the transport mechanism 14 transports the glass substrate G to the inspection processing unit 103 and performs a process of inspecting the state of the resist film on the glass substrate G. Thereafter, the glass substrate G is transferred to the transport mechanism 11 of the cassette station unit 90 indirectly or directly by the transport mechanism 14 via the substrate transport mechanism 16 disposed at the position P1 (in FIG. 1).

  Next, the transport mechanism 11 carries the glass substrate G into the cassette C that houses the processed glass substrate G that places the glass substrate G in the cassette placement unit 2, and the series of processing ends.

  The operation or role of the substrate transport mechanism 16 performs the following operation or role in addition to the above. When the processing of the glass substrate G is not the series of processing described above, but only the processing up to the cleaning processing is performed as the operation of the substrate transport mechanism 16, for example, the position P <b> 2 (in FIG. 1) ended by the cleaning processing unit 21. The glass substrate G is indirectly or directly received via the transport mechanism 12 and moved to the P1 (in FIG. 1) position, and the glass substrate G is delivered to the transport mechanism 11 of the cassette station unit 90. Further, for example, when it is desired to perform only the processing up to the resist coating processing, only the processing up to the exposure processing, or only the processing up to the thermal processing after completion of the exposure processing, P3 (in FIG. 1) The glass substrate G is indirectly or directly received via the transport mechanism 13 and moved to the P1 (in FIG. 1) position, and the glass substrate G is delivered to the transport mechanism 11 of the cassette station unit 90.

  As described above, when a predetermined process in the apparatus 1 is selected, or when the glass substrate G is no longer able to be processed, such as when the apparatus 1 is broken or stopped, the glass substrate G is discharged from the apparatus 1. When performing, it operates to access each transport mechanism.

  As described above, according to the present embodiment, in the cleaning processing unit 21 as a processing unit that performs a predetermined process on the glass substrate G, the cleaning unit 30 and the drying promoting unit 35 are performed as processing units that perform processes before and after the processing. Is disposed in one direction, and in the resist coating processing unit 22, a resist coating unit 51, a reduced pressure drying unit 52, and an unnecessary resist film removing unit 53 are disposed in one direction as processing units for performing the steps before and after the processing. In the development processing unit 23, a developing solution supply unit 80 and a rinsing solution supply unit 82 are arranged in one direction as processing units for performing the steps before and after the processing, and further in the cleaning processing unit 21 and the resist coating processing unit 22. The developer supply unit 80 includes transport mechanisms 38, 79, and 85 that can transport the glass substrate G in one direction. The fine developer supply unit 80 transport mechanism 12, 13, 14 for transporting the glass substrates G processed in the respective parts are respectively provided.

  In other words, a processing unit that performs predetermined pre- and post-processing is integrated, and further includes a transport mechanism that transports the substrate to the inside and the outside of the integrated processing system (for example, the cleaning processing unit 21 and the transport mechanism). 12 or the resist coating processing unit 22 and the transport mechanism 13 or the development processing unit 23 and the transport mechanism 14), for example, adjacent to the processing chamber constituting the processing unit, compared to the conventional system in which the processing unit is separately arranged and configured. Since the thickness of the processing wall at the side portion can be reduced, the space can be deleted accordingly, so that the apparatus can be reduced in size. As a result, the footprint of the apparatus can be reduced. In addition, a mechanism for setting the atmosphere in each processing unit is required in a plurality of processing units set to the same atmosphere, but by integrating them, the mechanism for setting those atmospheres is reduced. Therefore, the apparatus can be reduced in size, and as a result, the footprint of the apparatus can be reduced. In addition, the price of the apparatus can be reduced, which can further contribute to industrial development.

  Furthermore, by integrating the processing units that perform predetermined pre- and post-processing, the processing time for a plurality of substrates is made as compared with the conventional system in which the processing time between the processing units is made constant and the processing units are separately arranged and configured. Therefore, it is possible to suppress the variation in processing for each substrate, thereby reducing the yield.

  Furthermore, by integrating a processing unit that performs predetermined pre- and post-processing, further comprising a single transport mechanism in the processing unit, and configuring the entire system by combining at least one or a plurality of such systems, For example, since the thickness of the processing wall of the side part adjacent to the processing chamber constituting the processing unit can be reduced compared to the system in which the processing unit is separately arranged, the size of the apparatus can be reduced because space can be deleted accordingly. As a result, the footprint of the apparatus can be reduced. In addition, by arranging a processing unit that performs a predetermined process on the substrate processed by the processing unit arrangement unit, for example, a heating processing unit, above the processing unit (processing unit arrangement unit) that performs the processing before and after the predetermined, Accordingly, since the space can be further deleted, the apparatus can be reduced in size. Furthermore, since the processing unit arrangement unit and the heat treatment unit can be accessed by the conveyance mechanism provided for each processing unit arrangement unit, it is not necessary to have an extra conveyance mechanism, and further space can be eliminated, so that the size of the apparatus can be reduced. .

  Furthermore, by disposing a processing unit that performs a predetermined process on the substrate processed in the processing unit arrangement unit, for example, a heating processing unit, above the processing unit (processing unit arrangement unit) that performs the processing before and after the predetermined, By providing the heat treatment part on the upper side of the treatment part arrangement part, for example, the non-heat treatment part, it is possible to suppress the heat of the heat treatment part from going down, and to suppress the influence of the heat on the treatment part arrangement part. Therefore, it becomes possible to reduce the yield.

  Further, each processing unit (processing unit placement unit) that performs a predetermined front-rear process includes a dedicated transport mechanism, and is configured as an integral unit so that a substrate can be delivered from each transport mechanism. Since it has a transport mechanism, the degree of freedom of use of the system is expanded in maintenance, substrate dispensing, etc., and people can enter the placement area of the substrate transport mechanism, for example, a linear area, and use it as a maintenance area it can.

  Furthermore, a transport mechanism disposed in the same direction as the transport direction of the substrate in the processing unit placement unit attached to one processing unit placement unit, and a substrate in the processing unit placement unit attached to the other one processing unit placement unit Compared to the conventional system in which the processing unit is separately arranged and configured by having at least two systems with the transfer mechanism arranged in the direction perpendicular to the transfer direction of the two and combining them For example, since the thickness of the processing wall of the side part adjacent to the processing chamber constituting the processing unit can be reduced, the space can be deleted accordingly, and the apparatus can be reduced in size. Can be reduced.

  Furthermore, the heat processing unit is arranged above the liquid processing unit (processing unit arranging unit) (that is, arranged above the general entrance / exit of the processing unit arranging unit or above the transport height of the substrate in the processing unit arranging unit). Thus, by providing the heat treatment unit on the upper side of the liquid treatment unit, it is possible to suppress the heat of the heat treatment unit from going down, and to suppress the influence of heat on the liquid treatment unit, thereby reducing the yield. Can be achieved.

  Furthermore, by arranging the atmosphere blocking mechanism inside the liquid processing unit (processing unit arrangement unit), it is possible to suppress the interference of the atmosphere between the processing units in the processing unit arrangement unit, suppress the influence between each liquid processing unit, Therefore, it becomes possible to reduce the yield.

  Next, a second embodiment of the present invention will be described. FIG. 15 is a plan view showing a resist coating and developing apparatus for a glass substrate for LCD according to a second embodiment of the present invention. 16 is a cross-sectional view showing a main part of FIG. The description of the same symbols as those in the first embodiment will be omitted.

  As shown in FIG. 15, the glass substrate G processed in the processing unit arrangement unit, for example, the development processing unit 23, provided in the resist coating and developing processing device 109 is arranged on the development processing unit 23 by the transport mechanism 14. Further, the fifth heat processing unit 74 is configured to perform the processing as in the first embodiment. Further, as shown in FIG. 16, the transport mechanism 14 is also disposed on another transport mechanism, for example, the transport region 108 of the transport mechanism 11, with respect to the thermal processing unit 110 that performs thermal processing on the glass substrate G. However, the glass substrate G is configured to be transportable. Further, as shown in FIG. 15, the transport mechanism 14 is disposed on another transport mechanism, for example, the transport region of the substrate transport mechanism 16, and the thermal processing unit 110 that performs thermal processing on the glass substrate G. However, the glass substrate G is configured to be transportable.

  As shown in FIG. 16, the thermal processing unit 110 includes a heating processing unit 115 configured by laminating a plurality of heating processing units 114 that process the glass substrate G with predetermined heat, and the heating processing unit 115. Below the processing unit 115 and above the transfer region 108 of the transfer mechanism 11 or the substrate transfer mechanism 16, the temperature at the time of transfer to the 115 glass substrate G processed by the heat processing unit 115 or processing in the next step is set approximately. And a temperature adjustment processing unit 117 configured by stacking and arranging a plurality of temperature adjustment processing units 116.

  Since the thermal processing unit 110 is provided with more thermal processing units 110 than in the first embodiment, for example, the processing time of the glass substrate G processed in the development processing unit 23 (processing unit placement unit) is the fifth. When a processing time shift occurs such as when the processing time of the glass substrate G processed by the thermal processing unit 74 is shorter, it is possible to prevent a decrease in processing throughput due to the standby time than in the first embodiment. It becomes. In addition, when there is a limit in the height direction in the fifth heat system processing unit 74, there is a limit to the number of processing units arranged there. Therefore, the apparatus can be miniaturized.

  Further, in the thermal processing unit 110, the temperature adjustment processing unit 116 is disposed between the heat processing unit 115 and the transport region 108 of the transport mechanism 11 or the substrate transport mechanism 16, so that it is held by the transport mechanism 11 or the substrate transport mechanism 16. Therefore, it is possible to suppress the transfer of heat to the glass substrate G, and thus it is possible to reduce the yield. Further, considering the influence of heat, for example, the thermal processing unit 110 above the other transport mechanism 11 includes the thermal processing unit 110 and the development processing unit 23 (processing unit placement unit) configured only by the heating processing unit 114. The thermal processing unit 74 composed only of the temperature control processing unit 116 is provided above the control unit to suppress the transfer of heat to the glass substrate G with respect to the development processing unit 23 (processing unit placement unit). You can also.

  Further, as shown in FIG. 15, for example, the transport mechanism 14 is arranged on the transport area of another transport mechanism, for example, the transport mechanism 16, and the heat system that performs the heat processing on the glass substrate G is used. The glass substrate G is configured to be freely transportable to the processing unit 111, and the transport mechanism 13 is disposed on a transport region of a plurality of other transport mechanisms, for example, the transport mechanism 16, and performs heat processing on the glass substrate G. The glass substrate G can be freely transferred to the system processing unit 112 or to the heat processing unit 112 which is disposed on the transfer region of another transfer mechanism, for example, the transfer mechanism 15 and performs the heat processing on the glass substrate G. It is comprised so that the effect similar to the above-mentioned effect may be produced.

  Next, a resist coating and developing apparatus for a glass substrate for LCD according to a third embodiment of the present invention will be described. FIG. 17 is a plan view showing a resist coating and developing apparatus for a glass substrate for LCD according to a third embodiment of the present invention. 18 is a cross-sectional view showing a main part of FIG. FIG. 19 is a perspective view showing a main part of FIG. The description of the same symbols as those in the first embodiment will be omitted.

  As shown in FIG. 17, in the resist coating and developing apparatus 170, the linear transport arrangement unit 171 in which the substrate transport mechanism of the first embodiment is arranged waits for the glass substrate G to stand by temporarily. The substrate transport mechanisms 16a and 16b are respectively disposed in the plurality of divided regions 173. Further, the substrate transport mechanism 16a and the substrate transport mechanism 16b are configured to be able to deliver the glass substrate G via the standby unit 172, and the substrate transport mechanism 16b and the transport mechanism 13 can directly or indirectly deliver the glass substrate G. It is configured. The substrate transfer mechanisms 16a and 16b are self-propelled and configured to be self-propelled in the Y2 direction in the figure.

  Further, in the substrate transport mechanism 16a and the substrate transport mechanism 16b, the arm 41 is provided with a plurality of holding members 175 as a holding mechanism for holding or supporting the glass substrate G, as shown in FIG. I have. Further, at a position below the arm 41, a holding member base 178 having a plurality of holding members 177 as a holding mechanism for holding or supporting the glass substrate G that can freely protrude from the slit portion 176 of the arm 41, and the base 178. A lifting / lowering mechanism that moves up and down collectively, for example, a mechanism for temporarily waiting for the glass substrate G constituted by the air cylinder 179 is provided.

  Further, as an operation of the substrate transport mechanism 16a and the substrate transport mechanism 16b, as a delivery of the glass substrate G between the transport mechanism 13 and the substrate transport mechanism 16b, for example, first, the base 178 is set by the air cylinder 179 of the substrate transport mechanism 16b. The holding member 177 is raised and protruded from the arm 41 of the substrate transfer mechanism 16b, and the glass substrate G is transferred to the holding member 177 by the arm 41 of the transfer mechanism 13. Thereafter, the base 178 is lowered and held by the air cylinder 179. The glass substrate G of the member 177 is transferred to the holding member 175 of the arm 41 of the substrate transport mechanism 16b. Therefore, the substrate transport mechanism 16a and the substrate transport mechanism 16b also have a function of temporarily waiting the substrate.

  Further, since the substrate transport mechanism 16a and the substrate transport mechanism 16b each have the arm 41, the processing unit disposition unit, for example, the longitudinal direction of the development processing unit 23, that is, the transport mechanism 38 in the development processing unit 23. The glass substrate G is configured to be able to be loaded and unloaded from a loading / unloading port 39 provided in a direction substantially orthogonal to the conveyance direction of the glass substrate G, and the glass substrate G can be directly or indirectly transferred to the conveyance mechanism 38. ing.

  In such a configuration, the degree of freedom of use of the system is expanded in the maintenance of the processing unit arrangement unit, the dispensing of the substrate, etc., and the transfer time of the glass substrate G is also increased, so that the throughput in the transfer is further increased. Can be improved. In addition, since the standby unit 172 is provided, the substrate transfer mechanism 16a and the substrate transfer mechanism 16b can cause the standby unit 172 to temporarily wait on the glass substrate G. Therefore, in the transfer of the substrate transfer mechanism 16a or the substrate transfer mechanism 16b. The conveyance delay can be suppressed, and the throughput in the conveyance or processing of the glass substrate G can be further improved.

  Next, a resist coating and developing apparatus for a glass substrate for LCD according to a fourth embodiment of the present invention will be described. FIG. 20 is a plan view showing a resist coating and developing apparatus for a glass substrate for LCD according to a fourth embodiment of the present invention. The description of the same symbols as those in the third embodiment will be omitted.

  As shown in FIG. 20, the resist coating and developing apparatus 180 is configured by supplementing the function of the substrate transport mechanism 16 b with the transport mechanism 13 as understood from FIG. 17 used in the description of the third embodiment. Is. That is, the transport mechanism 13 is configured to make the transport mechanism 13 self-propelled and move in the Y2 direction in the figure, and is configured by adding a mechanism for temporarily waiting for the glass substrate G of the substrate transport mechanism 16b.

  With this configuration, the number of transport mechanisms can be reduced, the device price can be reduced, the turbulence in the device atmosphere due to the transport mechanism can be further reduced, and adhesion of mist and the like can also be suppressed. Therefore, the process yield can be improved. Furthermore, since the space such as the working force of the transport mechanism can be deleted, the apparatus can be reduced in size, and as a result, the footprint of the apparatus can be reduced.

  Next, a resist coating and developing apparatus for a glass substrate for LCD according to a fifth embodiment of the present invention will be described. FIG. 21 is a plan view showing a resist coating and developing apparatus for a glass substrate for LCD according to a fifth embodiment of the present invention. FIG. 22 is a perspective view showing a main part of FIG. The description of the same symbols as those in the above-described embodiment will be omitted.

  As shown also in FIG. 21, a substrate transport mechanism 16a for transporting the glass substrate G is disposed in the linear transport placement unit 171 of the resist coating and developing treatment apparatus 181. Is arranged. As shown in FIG. 22, the thermal processing unit 185 includes a heat processing unit 187 having a plurality of heat processing units 186 that heat-process the glass substrate G, and a glass substrate provided below the heat processing unit 187. A temperature adjustment processing unit 189 having a temperature adjustment processing unit 188 that sets G to a predetermined temperature suitable for conveyance and the like. And a delivery section 190 that delivers between the two. The delivery unit 190 may be provided with a temperature adjustment mechanism that sets the glass substrate G to a predetermined temperature suitable for conveyance or the like.

  Further, as shown in FIG. 22, the heat processing unit 187 of the heat processing unit 186 is configured to be disposed at a position Zb higher than the height position Za of the loading / unloading port 39 of the development processing unit 23. It is configured to suppress the influence of heat. Further, the temperature adjustment processing unit 188 and the delivery unit 190 are connected to the transport mechanism 14 and the substrate transport mechanism 16a (in the XA direction (substantially orthogonal to the transport direction of the glass substrate G in the processing unit disposition unit or the self-running direction of the substrate transport apparatus). Direction or substantially the same direction parallel to the self-running direction of the transport mechanism 11 and the XB direction (substantially the same direction as the transport direction of the glass substrate G in the processing unit placement unit or the self-running direction of the substrate transport device or the self-running of the transport mechanism 11. The glass substrate G can be loaded and unloaded in the XA and XB directions so as to be accessible (from the direction substantially orthogonal to the direction), and the delivery section 190 is accessible in the XC direction (processing) The glass substrate G is loaded in the direction of conveyance of the glass substrate G in the part arrangement section, the direction substantially the same as the self-running direction of the substrate transport apparatus, or the direction substantially perpendicular to the self-running direction of the transport mechanism 11). Freely out port 39 is provided. In addition, the heat treatment unit 186 of the heat treatment unit 187 is provided with a loading / unloading port 39 that allows the glass substrate G to be loaded / unloaded in the XA direction so as to be accessible only from the transport mechanism 14 (from the XA direction).

  As an example of the processing and conveyance procedure of the glass substrate G in the system configured as described above, the glass substrate G is unloaded from the development processing unit 23 by the conveyance mechanism 14 and the glass substrate G is selected by the conveyance mechanism 14. It is conveyed to 186 and processed. Thereafter, the glass substrate G is unloaded from the selected heat treatment unit 186 by the transfer mechanism 14 and transferred to the temperature adjustment processing unit 188 selected by the transfer mechanism 14 for processing. Thereafter, the glass substrate G is unloaded from the temperature adjustment processing unit 188 selected by the transfer mechanism 16a, and further transferred into the delivery unit 190 by the transfer mechanism 16a. After the loading / unloading port 39 in the XC direction of the delivery unit 190 is opened by an opening / closing mechanism, the glass substrate G is taken out from the loading / unloading port 39 by the transfer mechanism 11 of the cassette station unit 90 and is substantially unloaded from the processing station unit 91.

  With this configuration, for example, when it is necessary that the atmosphere from the cassette station unit 90 does not flow into the processing station unit 91 side, only the loading / unloading port 39 in the XC direction of the delivery unit 190 is provided. The influence of mist etc. can be suppressed. In addition, for example, when the processing station unit 91 is set to a positive pressure from the cassette station unit 90 side by a pressure adjustment mechanism or the like, the use of wind pressure or the like such as the pressure adjustment mechanism or the like, for example, requires less power so that the apparatus price is reduced. In addition, the interference of the atmosphere between the stations can be further reduced, and adhesion of mist and the like can be suppressed, so that the processing yield can be improved. Furthermore, the space for the pressure adjusting mechanism and the like can be reduced, so that the apparatus can be downsized. As a result, the footprint of the apparatus can be reduced.

  In addition, when the temperature adjustment processing unit 188 is used as the delivery unit 190, a loading / unloading port 39 is further provided on the XC direction side of the temperature adjustment processing unit 188, and the temperature adjustment processing unit 188 by the substrate transport mechanism 16a is transferred to the delivery unit 190. It becomes possible to delete the process of conveying the glass substrate G, and the throughput of the conveying time of the glass substrate G can also be improved. In addition, when connecting as another apparatus without providing the inspection mechanism in the apparatus, the apparatus is connected to the side facing the thermal processing unit 185 so that it can be accessed from the transport mechanism 14 to increase the connectivity of the apparatus. Also good.

  Next, a processing liquid coating treatment apparatus will be described as another embodiment of a resist coating and developing apparatus for an LCD glass substrate according to a sixth embodiment of the present invention. FIG. 23 is a plan view showing a processing solution coating apparatus for a glass substrate for LCD according to a sixth embodiment of the present invention. 24 is a plan view showing the main part of the processing unit arrangement part of FIG. 23, FIG. 25 is a perspective view showing the main part of the processing part arrangement part of FIG. 23, FIG. 26 is a diagram for explaining processing, and FIG. It is a top view which shows the principal part of the process part arrangement | positioning part as other embodiment of 24 process part arrangement | positioning parts. The description of the same symbols as those in the above-described embodiment will be omitted.

  As shown also in FIG. 23, the processing liquid coating processing apparatus 194 uses, for example, a color solvent (in the case of a semiconductor wafer, for example, an organic or inorganic solvent for forming an SOD or SOG film is used as such a coating liquid. For example, a coating processing unit 22a having the same configuration as the resist coating processing unit 22 as described above, a processing unit mounting unit, for example, a cleaning processing unit 21, and the like. The thermal processing unit 185a, which does not include the heat processing unit 187 in the configuration, the transport mechanisms 12, 16a, the coating processing unit 22a, and the cleaning process are the same as the configuration of the thermal processing unit 185 described above. A first processing station unit 195 composed of a thermal processing unit 200 as another processing unit arrangement unit arranged one or more on the upper part of the unit 21, and a cassette station unit 9 And a thermal system second processing station unit 196 including a plurality of, for example, two thermal processing units 200 arranged on the target with the transport mechanism 15a interposed therebetween, and the main part thereof is configured. Has been. It should be noted that at least one thermal processing unit 200 is disposed in a stacked manner.

  Furthermore, as shown in FIG. 24, the thermal processing unit 200 includes at least one, for example, three, for example, three loading / unloading ports 39 for loading or unloading the glass substrate G. Furthermore, inside the thermal processing unit 200, a temperature control mechanism that delivers the glass substrate G directly or indirectly with the transport mechanism 16a or the transport mechanism 15a disposed outside the thermal system processing unit 200 is provided. And heat-treating the glass substrate G at a predetermined temperature and an arm-shaped temperature adjustment processing unit 205 having a moving mechanism as a movement processing unit that moves in the XP direction (longitudinal direction of the processing unit arrangement unit) in the drawing. The heat processing unit 206 and the atmosphere blocking mechanism 150 as described above constitute the main part.

  Further, the temperature adjustment processing unit 205 is configured to protrude from below the temperature adjustment processing unit 205, and includes a plurality of slit portions 208 so as not to contact a holding member for holding or supporting the glass substrate G, for example, the holding pins 207. In addition, the temperature adjustment processing unit 205 includes a holding member for holding or supporting the glass substrate G, for example, a holding pin 209. As a standby position of the temperature adjustment processing unit 205, as shown in the figure, the temperature adjustment at a position where the glass substrate G is directly or indirectly transferred to or from the transfer mechanism 16a or the transfer mechanism 15a disposed outside the heat processing unit 200. Region 210.

  Next, the heat treatment unit 206 is fixedly arranged in the heat treatment region, and as shown in FIG. 25, at least one of the lid 219 and the base 212 is close to form a treatment chamber. It is configured as follows. The base 212 has a heat plate 213 as a heating body for setting the glass substrate G at a predetermined temperature, and is in contact with the bottom of the lid portion 219 disposed around the heat plate 213 and is a sealed space in the processing chamber. And a plurality of exhaust ports 215 for exhausting the processing chamber between the O-ring 214 and the heat plate 213, the plurality of exhaust ports 215 being an exhaust mechanism, For example, the vacuum pump 216 is connected via an opening / closing mechanism, for example, a valve 217. The hot plate 213 is provided with a hole 218 in which a holding member for holding or supporting a plurality of glass substrates G, for example, a holding pin (not shown) can be protruded, and the hot plate 213 has a hole. A holding member, for example, a holding pin 220, is provided for positioning and holding or supporting the glass substrate G transferred from a holding pin configured to be able to protrude with respect to the portion 218 on the hot plate 213.

  Further, when the base 212 and the processing chamber are configured, an opening / closing mechanism such as a predetermined processing gas or an inert gas such as nitrogen is supplied to the lid 219 from the gas supply unit 223. When the gas supply mechanism 221 supplied through the valve 224, the base 212, and the processing chamber are configured, the processing space is exhausted by the opening / closing mechanism, for example, the valve 225, by the exhaust unit, for example, the vacuum pump 226. Mechanism 222 is provided.

  An example of a procedure for processing the glass substrate G in the system configured as described above will be described below. First, the glass substrate G carried out of the cassette C by the transport mechanism 11 is carried into one of the cleaning processing units 21 and subjected to a cleaning process by the transport mechanism 11 arranged in the first atmosphere. . Further, the glass substrate G processed in the cleaning processing unit 21 is unloaded from the cleaning processing unit 21 by the transport mechanism 12 and is transferred to the thermal processing unit 200 above either the coating processing unit 22 a or the cleaning processing unit 21. Selected and transported.

  As an example of a delivery procedure between the transport mechanism 12 and the thermal processing unit 200, an arm that holds the glass substrate G of the transport mechanism 12 after the opening / closing mechanism (not shown) of the loading / unloading port 39 of the thermal processing unit 200 is opened. 41 is located above the temperature adjustment processing unit 205 in the processing unit 200 of the thermal system via the loading / unloading port 39. Thereafter, after the glass substrate G is transferred onto the holding pins 207 protruding from the lower side of the temperature adjustment processing unit 205, the arm 41 of the transport mechanism 12 is retracted out of the thermal processing unit 200. (After that, the opening / closing mechanism (not shown) of the loading / unloading port 39 is closed) The holding pin 207 descends while holding the glass substrate G and delivers the glass substrate G to the holding pin 209 of the temperature adjustment processing unit 205 (at this time, The temperature adjustment processing unit 205 is in a stationary state, and the glass substrate G held by the holding pins 209 of the temperature adjustment processing unit 205 is brought to a predetermined temperature, for example, approximately room temperature 23 ° C. by the temperature adjustment mechanism of the temperature adjustment processing unit 205. Temperature control processing is started (temperature control processing step before heat processing)).

  Next, the temperature control processing unit 205 moves from the temperature control region 210 (second atmosphere) to the heat processing region 211 (third atmosphere) with the glass substrate G held by the holding pins 209, that is, in the direction of the heat processing unit 206. It moves horizontally (in the XP direction) to a position above the hot plate 213 of the heat treatment unit 206 via the atmosphere blocking mechanism 150. A holding pin protrudes from the hole 218 and the glass substrate G of the temperature adjustment processing unit 205 is held and transferred by raising the holding pin (then, the temperature adjustment processing unit 205 moves to the temperature adjustment region 210 and stands by). .

  Next, holding a glass substrate G after supplying a predetermined gas from the gas supply mechanism 221 into the heat treatment region 211 and setting the ambient atmosphere of the glass substrate G to a substantially predetermined gas (atmosphere setting step before the heat treatment). The pins are lowered and stored in the holes 218, and the glass substrate G is transferred to the holding pins 220 of the hot plate 213. Thereafter, the lid portion 219 descends and the bottom of the lid portion 219 and the O-ring 214 of the base 212 come into contact with each other to form a processing chamber. Further, while introducing a predetermined gas from the gas supply mechanism 221 into the processing chamber, the processing chamber is exhausted by the exhaust port 215 or the exhaust mechanism 222 to heat the glass substrate G, for example, at a temperature of 200 ° C. or higher as a heating temperature. Processed (heat treatment process).

  Next, after the glass substrate G is heat-treated in the processing chamber, the lid 219 is raised and separated from the base 212 to cancel the formation of the processing chamber. A holding pin protrudes from the hole 218 and the glass substrate G is separated and held from the heat plate 213 by raising the holding pin (until this time, a predetermined gas is supplied from the gas supply mechanism 221 to the glass substrate G ( After-heat treatment atmosphere setting step)). After the glass substrate G is lowered to a predetermined temperature, the temperature adjustment processing unit 205 moves from the temperature adjustment region 210 (second atmosphere) and is held by the holding pins protruding from the heat plate 213 and the hole 218. It is located at a predetermined position with G.

  Next, the holding pin protruding from the hole 218 is lowered so as to be accommodated in the hole 218, and the glass substrate G is transferred to the holding pin 209 of the temperature adjustment processing unit 205. (The transferred glass substrate G begins to be cooled to be set to a predetermined temperature by the temperature adjustment mechanism of the temperature adjustment processing unit 205.) Thereafter, the temperature adjustment processing unit 205 holds the glass substrate G on the holding pins 209. In the state, from the heat treatment region 211 (third atmosphere) to the temperature adjustment region 210 (second atmosphere), that is, in the standby direction (XP direction) of the temperature adjustment processing unit 205, the temperature adjustment processing unit 205 The glass substrate G is temperature-controlled at a predetermined temperature by the temperature adjustment mechanism of the temperature adjustment processing unit 205 in a stationary state. (Temperature adjustment processing step after heat treatment) (In addition, the temperature adjustment processing unit 205 performs the movement of the temperature adjustment processing unit 205 with respect to the glass substrate G held by the holding pins 209 of the temperature adjustment processing unit 205 at the standby position of the temperature adjustment processing unit 205. A gas having a temperature substantially equal to the set temperature of the temperature control mechanism may be supplied from a gas supply mechanism (temperature control promotion mechanism) (not shown) to increase the temperature control processing throughput of the glass substrate G. When the shut-off mechanism 150 is configured with gas as described above, the same effect can be obtained by setting the gas to substantially the same temperature as the set temperature of the temperature control mechanism of the temperature control processing unit 205.) Then, after the opening / closing mechanism (not shown) of the loading / unloading port 39 of the thermal processing unit 200 is opened, the glass substrate G is received via the holding pin 207 protruding from below the temperature adjustment processing unit 205 by the transport mechanism 12. Thermal system processing 200 outside via the transfer port 39 unloading the glass substrate G.

  As an example of performing such processing, a heat treatment of a substrate to be processed, for example, an SOD film on a semiconductor wafer, for example, a Low-K film (low dielectric constant film) will be specifically described with reference to FIG. FIG. 26 is a table for indicating the influence of the steps in the pre-heat treatment atmosphere setting step or the post-heat treatment atmosphere setting step on the substrate processing. In the heat treatment of the Low-K film, assuming that the substrate and the Low-K film formed on the substrate have the same temperature, the temperature of the substrate is a predetermined temperature, for example, a temperature of about 200 ° C. or higher. The present inventor discovers that the low-K film causes problems such as oxidation when the oxygen concentration in the atmosphere around the substrate is a predetermined concentration or higher, for example, about 30 to 100 ppm, preferably 30 ppm or higher. It came.

  Accordingly, in the pre-heat treatment atmosphere setting step, for example, nitrogen is used as an inert gas as the predetermined gas for setting the ambient atmosphere around the substrate by the gas supply mechanism 221, and the hole of the hot plate 213 is disposed above the hot plate 213. The condition of the substrate held by the holding pins protruding from 218 is a predetermined oxygen concentration or lower, for example, about 30 to 100 ppm, preferably 30 ppm or lower, while being maintained at a predetermined temperature or lower, for example, about 200 ° C. or lower. Thereafter, the substrate is heated close to the hot plate 213, for example, at a temperature of 200 ° C. or higher, for example, 450 ° C. Further, the substrate condition in the atmosphere setting step after the heat treatment is a predetermined oxygen concentration or higher, for example, about 30 to 100 ppm, preferably in a state where the substrate temperature is lowered to a predetermined temperature or lower, for example, about 200 ° C. or lower. It is necessary to release the oxygen concentration around the substrate to 30 ppm or more to the atmospheric oxygen concentration.

  Further, although the hot plate 213 is disclosed as applying predetermined energy to the substrate, it is replaced with a heating body such as a hot plate or used in combination with predetermined electromagnetic energy, for example, an electron beam or the like by an EB apparatus. May be. Also in this case, as described above, the relationship between the substrate temperature and the oxygen concentration around the substrate needs to be set in substantially the same manner.

  In addition, the atmosphere in the temperature control region 210 (second atmosphere) or the heat treatment region 211 (third atmosphere) is always supplied at a predetermined oxygen concentration or lower, for example, with nitrogen or the like, for example, in the thermal processing unit 200. Although it is an effective means to fill the gas, the consumption of nitrogen becomes intense and the running cost becomes great, so the following solution can be considered.

  That is, the thermal processing unit 200 is supplied with oxygen concentration, for example, 30 ppm or less containing gas, nitrogen or the like from the gas supply mechanism 221 or the temperature control promotion mechanism, and maintained at a positive pressure in the thermal processing unit 200. The loading / unloading port 39 is closed by an opening / closing mechanism (not shown) to maintain a certain degree of airtightness. Further, the atmosphere blocking mechanism 150 is configured as a shutter mechanism as described above so that the atmosphere in the temperature control region 210 (second atmosphere) and the heat treatment region 211 (third atmosphere) can be blocked.

  Further, when the atmosphere of the transport mechanism 12 disposed outside the thermal processing unit 200 is the atmosphere inside the apparatus (first atmosphere), when the transport mechanism 12 accesses the thermal processing unit 200, the thermal system Since the loading / unloading port 39 of the processing unit 200 is opened by the opening / closing mechanism, the first atmosphere may flow into the second atmosphere due to the entry of the arm 41. However, in that case, if the temperature control region 210 and the heat treatment region 211 are separated by the closing operation of the atmosphere blocking mechanism 150, the heat treatment region 211 is not affected. Further, when the atmosphere blocking mechanism 150 is opened, there is a problem of atmospheric interference between the heat treatment region 211 and the temperature control region 210, so that the pressure is substantially the pressure of the first atmosphere <the pressure of the second atmosphere. Or / and the pressure of the second atmosphere <the pressure of the third atmosphere or / and the oxygen concentration is substantially the oxygen concentration of the first atmosphere> the oxygen concentration of the second atmosphere or / and the oxygen of the second atmosphere If the concentration is set such that the oxygen concentration of the third atmosphere is set, there is no problem of atmospheric interference, and it is possible to suppress the occurrence of problems in the processing of the substrate.

  Further, the temperature is substantially the first atmosphere temperature <the temperature of the second atmosphere or / and the temperature of the second atmosphere <the temperature of the third atmosphere. If the temperature of the second atmosphere temperature is not affected by the temperature adjustment of the second atmosphere, for example, about 200 ° C. .

  Further, since the influence of the oxygen concentration as described above is also related to the humidity in the atmosphere, the humidity is substantially the humidity of the first atmosphere> the humidity of the second atmosphere or / and the humidity of the second atmosphere. > It is preferable to set the humidity of the third atmosphere.

  Next, returning to the processing procedure of the glass substrate G shown in FIG. 23, after the glass substrate G is unloaded through the loading / unloading port 39 out of the thermal processing unit 200 by the transfer mechanism 12, the glass substrate G is transferred by the transfer mechanism 12. G is subjected to a predetermined coating process by the coating processing unit 22a, and then the glass substrate G is glass by the heat processing unit 200 or the transport mechanism 16a above the coating processing unit 22a by the transport mechanism 16a. The substrate G is directly or indirectly transferred to the transport mechanism 15a (from the first processing station unit 195 side to the second processing station unit 196 side of the thermal system) and transferred to the second processing station unit 196 side by the transport mechanism 15a. It is directly or indirectly transferred to a selected thermal processing unit 200 among the plurality of thermal processing units 200 to be arranged, and is subjected to thermal processing as described above.

  Next, for the thermal processing unit 200 on the upper part of the coating processing unit 22a, the selection is made among the plurality of thermal processing units 200 arranged in the transport mechanism 16a or on the second processing station unit 196 side. The glass substrate G processed by the thermal processing unit 200 is once transferred directly or indirectly to the transport mechanism 16a via the transport mechanism 15a. Further, the glass substrate G is transferred to the processing unit 185a by the transport mechanism 16a, and is transported from the processing unit 185a by the transport mechanism 11 and loaded into the cassette C, and the series of processes is completed.

  With this configuration, the thermal processing unit 200 serving as the processing unit placement unit is provided in the thermal control unit 200 as a plurality of processing units in the temperature control region 210 and the heat processing region 211, respectively. The heating processing unit 206 and the temperature control processing unit 205, ie, a processing unit that performs predetermined pre- and post-processing, are integrated, and any one of the transfer functions for transporting the substrate within the integrated processing system. Compared to the conventional system in which the processing unit is separately arranged and configured, it is adjacent to the processing chambers that constitute the processing unit. Since the thickness of the processing wall at the side can be reduced, the space can be deleted accordingly, and the device can be downsized. As a result, the footprint of the device can be reduced. It becomes possible. Further, by providing the atmosphere blocking mechanism 150 between a plurality of processing units, for example, between the heat processing unit 206 and the temperature adjustment processing unit 205, it is possible to suppress the interference of the atmosphere in the arrangement region of the processing units. Furthermore, by integrating the thermal processing unit, the atmosphere with the heat outside the thermal processing unit arrangement unit is once directly transferred from the substrate through the temperature control processing unit 205, Heat from the heat treatment unit 206 can be suppressed from flowing out, and the influence of heat can be suppressed as another processing unit arrangement unit, for example, a liquid processing unit arrangement unit, thereby increasing the substrate processing yield. It becomes possible to reduce.

  Further, a plurality of thermal processing units 200 are stacked to form a block, and at least one block, for example, two blocks are arranged (for example, as shown in FIG. The temperature adjustment processing unit 205 as the heat treatment is arranged (arranged so as to suppress the influence of heat by separating the heat treatment unit as far as possible from the processing station unit 195) and arranged to oppose the conveyance mechanism 15a) In addition, by providing a thermal processing station unit 196 configured to allow a substrate to be carried into or transported to the thermal processing unit 200 of a plurality of blocks by the transport mechanism 15a, It is possible to individually manage the atmosphere with the processing station unit 195, and the influence of the heat of the thermal processing unit 200 is liquid processing. It is possible to reduce the yield of the processing of the substrate in order not to act by the processing station unit 195 that performs. Furthermore, when the apparatus system is constructed by integrating the thermal processing station unit 196, the degree of freedom is improved.

  Further, another embodiment of the thermal processing unit 200 will be described with reference to FIG. The substrate loading / unloading port in the thermal processing unit 200 of FIG. 27 includes a loading / unloading port 39b on the temperature adjustment processing unit 205 side and a loading / unloading port 39a of the heat processing unit 206. The transfer mechanism 15a illustrated in FIG. In the figure, in the Yt direction (on the extension line in the self-running direction (Y2) of the transport mechanism 16a in the processing station unit 195, or on the line substantially parallel to the extension line, or the moving direction of the temperature adjustment processing unit 205 of the thermal processing unit 200) (On a line parallel to (XP)). (In the above-described embodiment, it is not configured to be self-propelled but is fixed.) By such a transport mechanism 15a, heat treatment is performed to the temperature adjustment processing unit 205 via the loading / unloading port 39b and via the loading / unloading port 39a. The substrate 206 is configured to be transportable with respect to the unit 206.

  As an operation in the system configured as described above, first, the substrate is directly or indirectly carried into the heat processing unit 206 of the thermal processing unit 200 by the transport mechanism 15a. After the processing of the substrate is completed in the heat processing unit 206, the temperature adjustment processing unit 205 moves in the direction of the heat processing unit 206, and then the substrate of the heat processing unit 206 is delivered to the temperature adjustment processing unit 205, and the substrate is temperature controlled. Temperature processing is performed in the processing unit 205.

  With this configuration, for example, when a temperature adjustment step is not required before the heat treatment, there is no particular problem even if the loading / unloading port 39a is disposed on the heat treatment portion side, for example, the heat treatment temperature is low or the treatment portion is disposed. In the case where it is not necessary to set the atmosphere inside the unit, even if the loading / unloading port 39a is arranged on the heat processing unit side, predetermined measures are taken in the heat processing station unit 196, and the processing station unit 195 In the case where the thermal influence on the side is suppressed, the temperature adjustment processing unit 205 is not interposed once when the substrate is carried into the thermal processing unit 200, so that the processing throughput can be improved. it can.

  In addition, it cannot be overemphasized that about the heat processing part 200 described above, it may replace with the heat processing part or temperature control processing part which are arrange | positioned by other embodiment, Each heating The processing unit or the temperature control processing unit and the thermal processing unit 200 may be used in combination.

  It should be noted that the present invention is not limited to the above-described embodiments, and various modifications within the scope of the idea of the present invention, or modifications configured by combining a plurality of essential parts or the whole of each embodiment, for example, the layout of the apparatus, However, the processing is not limited to the processing by the resist coating and developing processing apparatus as described above, and other apparatuses that perform liquid processing and thermal processing, for example, predetermined processing. A device that simply applies the processing liquid to the substrate, a device that only cleans the substrate with a predetermined processing liquid, a device that only temperature-treats the substrate at a predetermined temperature, or a device that combines these configurations It is also possible to apply to the above. Furthermore, although the case where an LCD substrate or a semiconductor wafer is used as the substrate to be processed has been shown, it is needless to say that the present invention is not limited to this and can be applied to processing of other substrates to be processed such as color filters, compact discs, MDs and the like. Absent.

1 is a plan view showing a resist coating and developing treatment apparatus according to a first embodiment of the present invention. The side view which shows the inside of the principal part of the resist coating and developing processing apparatus which concerns on the 1st Embodiment of this invention. The side view which shows the inside of the principal part of the resist coating and developing processing apparatus which concerns on the 1st Embodiment of this invention. The top view which shows the inside of the principal part of the resist application | coating development processing apparatus which concerns on the 1st Embodiment of this invention. 1 is a side view showing a main part of a resist coating and developing treatment apparatus according to a first embodiment of the present invention. The side view which shows the inside of the principal part of the resist coating and developing processing apparatus which concerns on the 1st Embodiment of this invention. 1 is a perspective view showing a main part of a resist coating and developing treatment apparatus according to a first embodiment of the present invention. 1 is a perspective view showing a main part of a resist coating and developing treatment apparatus according to a first embodiment of the present invention. 1 is a perspective view showing a main part of a resist coating and developing treatment apparatus according to a first embodiment of the present invention. Sectional drawing which shows the principal part of the resist application | coating development processing apparatus which concerns on the 1st Embodiment of this invention. 1 is a perspective view showing a main part of a resist coating and developing treatment apparatus according to a first embodiment of the present invention. Sectional drawing which shows the principal part of the resist application | coating development processing apparatus which concerns on the 1st Embodiment of this invention. 1 is a perspective view showing a main part of a resist coating and developing treatment apparatus according to a first embodiment of the present invention. Sectional drawing which shows the principal part of the resist application | coating development processing apparatus which concerns on the 1st Embodiment of this invention. The top view which shows the resist application | coating development processing apparatus which concerns on the 2nd Embodiment of this invention. Sectional drawing which shows the principal part of the resist application | coating development processing apparatus which concerns on the 2nd Embodiment of this invention. The top view which shows the resist application | coating development processing apparatus which concerns on the 3rd Embodiment of this invention. Sectional drawing which shows the principal part of the resist coating and developing processing apparatus which concerns on the 3rd Embodiment of this invention. The perspective view which shows the principal part of the resist coating and developing processing apparatus which concerns on the 3rd Embodiment of this invention. The top view which shows the resist coating and developing processing apparatus which concerns on the 4th Embodiment of this invention. The top view which shows the resist application | coating development processing apparatus which concerns on the 5th Embodiment of this invention. The perspective view which shows the principal part of the resist application | coating development processing apparatus which concerns on the 5th Embodiment of this invention. The top view which shows the process liquid application | coating apparatus which concerns on the 6th Embodiment of this invention. The top view which shows the principal part of the process liquid coating processing apparatus which concerns on the 6th Embodiment of this invention. The perspective view which shows the principal part of the process liquid coating processing apparatus which concerns on the 6th Embodiment of this invention. The figure explaining the process which concerns on the 6th Embodiment of this invention. The top view which shows other embodiment of FIG.

Explanation of symbols

1, 170, 180, 181... Resist coating and developing apparatus 5, 6, 7... Transport mechanism placement unit 11, 12, 13, 14, 15, 15 a. Substrate transport mechanism)
21 …… Cleaning processing unit (processing unit placement unit)
22 …… Resist application processing section (processing section placement section)
23 …… Development processing section (processing section placement section)
25, 71, 72, 73, 74... Thermal processing units 38, 79, 85... Transport mechanism 90... Cassette station units 91, 195, 196. Atmosphere blocking mechanism 194... Treatment liquid coating apparatus 200... Thermal processing section (processing section placement section)
205 …… Temperature control unit 206 …… Heating unit G …… LCD glass substrate

Claims (6)

  A roller transport unit having a roller transport mechanism configured to freely transport a substrate to be processed by a roller and having a loading / unloading port for loading and unloading the substrate to be processed. A first substrate processing unit that includes a temperature control processing unit that performs conditioning processing, and a thermal processing unit that is disposed above the temperature control processing unit and that performs thermal processing on the substrate to be processed at a temperature higher than the temperature control processing unit. And a transport unit having a transport mechanism configured to transport the substrate to be processed and having a loading / unloading port for loading and unloading the substrate to be processed, and a temperature at which the substrate to be processed is temperature-controlled. A second processing target substrate processing unit including a conditioning processing unit, and a thermal processing unit disposed above the temperature control processing unit and performing a thermal processing on the processing substrate at a temperature higher than the temperature control processing unit. And the first processed Between the plate processing section and the second processed substrate processing section and disposed outside each processed substrate processing section, and / or a roller transport mechanism of a roller transport section of the first processed substrate processing section A substrate processing apparatus comprising a first transfer mechanism configured to be able to transfer the substrate to be processed with respect to a transfer mechanism of a transfer unit of the second substrate processing unit to be processed. . The first are passed freely configure target substrate from the transfer mechanism, the substrate processing apparatus according to claim 1, characterized by including a second transport mechanism for transporting to the self-propelled substrate to be processed. The substrate processing apparatus according to claim 1 , wherein the roller transport unit includes a processing liquid supply mechanism that supplies a processing liquid to the substrate to be processed. The gas supply mechanism which supplies gas with respect to the said to-be-processed substrate, and the exhaust mechanism which exhausts the gas from this gas supply mechanism were comprised, The any one of Claims 1-3 characterized by the above-mentioned. Substrate processing equipment. A substrate processing method, comprising: processing a substrate to be processed using the substrate processing apparatus according to claim 1 . A substrate manufacturing method using the substrate processing apparatus according to claim 1 to manufacture a substrate to be processed.

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