JP3499145B2 - Heat treatment method, heat treatment apparatus and treatment system - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a heat treatment method, a heat treatment apparatus and a treatment system. Especially, for example, on a semiconductor wafer, SOD (Spin On Dielec)
tric) a technique useful for forming a film.

[0002]

2. Description of the Related Art When an organic SOD film such as plastic is formed on a semiconductor wafer (hereinafter, simply referred to as "wafer"), it is generally performed as follows.

First, while the wafer mounted on the spin chuck is rotated, the coating liquid is supplied to the rotation center of the wafer. As a result, the supplied coating liquid is spread over the entire wafer surface by the centrifugal force. Next, the wafer thus coated with the coating solution is heat-treated at a temperature of about 400 ° C. in an oven, for example. After that, for example, the wafer is cooled by a cooling mechanism provided in a transfer device that transfers the wafer.

[0004]

However, when the coating liquid is an organic system such as plastic, the coating liquid on the substrate is oxidized by heat treatment at the above high temperature.
There is a problem. Further, when cooling is performed from the high temperature as described above, there is a problem that it is difficult to make fine adjustment for performing appropriate cooling.

The present invention has been made to solve the above problems, and provides a heat treatment method, a heat treatment apparatus, and a treatment system capable of heat treating a substrate while suppressing the oxidation of a coating solution. It is an object. Another object of the present invention is to provide a processing system in which fine adjustment for proper cooling is easy and its mechanism is simple.

[0006]

In order to solve the above problems, the heat treatment method of the present invention is a method of heat treating a substrate coated with a coating solution that oxidizes at high temperature in a heat treatment chamber. The substrate is heat-treated by controlling the gas concentration of the atmosphere to be treated, and after the heat treatment is completed, the substrate is provided in
The heat treatment equipment is used while cooling the substrate with a cooling holding plate.
It is characterized in that the substrate is carried out from the table .

According to the heat treatment method of the present invention, a substrate on which a coating liquid that oxidizes at high temperature is applied has a lid body.
A method of heat treatment in an apparatus, comprising the step of applying the substrate
A step of accommodating in a heat treatment apparatus and closing the lid; a step of reducing the oxygen concentration of the treatment atmosphere at a low temperature; a step of heat-treating the substrate in a treatment atmosphere with a reduced oxygen concentration; from the end after a predetermined time has elapsed, the
The process of opening the lid, and after opening the lid
Heating while cooling the substrate with the cooling holding plate provided
Unloading the substrate from the processing apparatus .

The heat treatment method of the present invention is a method of heat treating a substrate coated with an organic coating solution in a heat treatment apparatus having a lid , wherein the substrate is subjected to the heat treatment. Dress
A step of accommodating the substrate and closing the lid; a step of replacing the processing atmosphere with an inert gas at a low temperature; a step of heat-treating the substrate in the processing atmosphere of the replaced inert gas; After a predetermined time has passed from the end of the treatment, the lid is
A step of opening the body, after opening the lid, setting the conveying device
While the substrate is cooled by the cooled holding plate, the heat treatment is performed.
And a step of unloading the substrate from the processing device .

According to the heat treatment method of the present invention, a substrate on which a coating liquid that oxidizes at high temperature is applied has a lid.
A method of heat treatment in an apparatus, comprising the step of applying the substrate
A step of accommodating in a heat treatment apparatus and closing the lid; a step of reducing the oxygen concentration of the treatment atmosphere at a low temperature; a step of heat-treating the substrate in a treatment atmosphere with a reduced oxygen concentration; When the temperature falls below a predetermined temperature, the lid
A step of opening the body, after opening the lid, setting the conveying device
While the substrate is cooled by the cooled holding plate, the heat treatment is performed.
And a step of unloading the substrate from the processing device .

The heat treatment method of the present invention is a method of heat treating a substrate coated with an organic coating liquid in a heat treatment apparatus having a lid , wherein the substrate is subjected to the heat treatment. Dress
A step of accommodating the substrate and closing the lid; a step of replacing the processing atmosphere with an inert gas at a low temperature; a step of heat-treating the substrate in the processing atmosphere of the replaced inert gas; When the temperature drops below a predetermined temperature, the lid
A step of opening a, after opening the lid, provided in the transport device
Heat treatment while cooling the substrate with the cooling holding plate
Unloading the substrate from the apparatus .

In the processing system of the present invention, a processing chamber, a holding member arranged in the processing chamber for holding a substrate coated with an organic coating liquid, and an atmosphere in the processing chamber are replaced with an inert gas. Replacement means, heat treatment means for performing heat treatment on the substrate held by the holding member in the atmosphere replaced by the inert gas by the substitution means, and after a lapse of a predetermined time from the end of the heat treatment, the processing chamber A heat treatment device having means for opening the substrate to the atmosphere , and holding the substrate.
The base with a holding cooling plate for cooling while
In order to carry in and out the heat treatment equipment,
Drive means for moving the heat treatment device so as to move back and forth
And a transport device having.

The processing system of the present invention includes a processing chamber having an openable / closable lid, a holding / heating member that is disposed in the processing chamber, and that holds and heats a substrate coated with an organic coating liquid, Support pins that can be retracted from the surface of the holding and heating member, support the substrate away from the surface of the holding and heating member at the time of protrusion, and mount the substrate on the surface of the holding and heating member at the time of immersion, and the substrate by the support pins. The substrate is supported by immersing the support pin in a supporting state in which the atmosphere in the processing chamber is replaced with an inert gas and the atmosphere replaced with the inert gas by the replacing means. A means for placing the substrate on the surface of the holding and heating member and performing a heat treatment, and by separating the substrate from the surface of the holding and heating member by projecting the support pin after completion of the heat treatment, and further for a predetermined time. After a lapse of time , a heat treatment apparatus having a means for opening the lid to open the inside of the treatment chamber to the atmosphere ,
A base having a holding cooling plate for cooling while holding the substrate
And before transferring the substrate into and out of the heat treatment apparatus.
The holding cooling plate can be moved back and forth with respect to the heat treatment device.
And a conveying device having a driving means for moving the same.

[0013] processing system of the present invention, the above process shea
In the stem , the replacement means includes a jetting means for jetting an inert gas into the processing chamber.

[0014] processing system of the present invention, the above process shea
In the stem , the ejection of the inert gas by the ejection means is controlled according to the elapse of the processing time.

In the processing system of the present invention, the processing chamber, the holding member arranged in the processing chamber for holding the substrate coated with the organic coating liquid, and the atmosphere in the processing chamber are replaced with an inert gas. Replacement means, heat treatment means for heat-treating the substrate held by the holding member in the atmosphere replaced with the inert gas by the replacement means, and means for measuring the temperature of the heat-treated substrate, When the substrate has a predetermined temperature or lower after the end of the heat treatment, a heat treatment apparatus having a means for opening the treatment chamber to the atmosphere ,
A base having a holding cooling plate for cooling while holding the substrate
And before transferring the substrate into and out of the heat treatment apparatus.
The holding cooling plate can be moved back and forth with respect to the heat treatment device.
And a conveying device having a driving means for moving the same.

The processing system of the present invention includes a processing chamber having an openable / closable lid, a holding / heating member that is disposed in the processing chamber and heats a substrate coated with an organic coating liquid while holding the substrate. Support pins that can be retracted from the surface of the holding and heating member, support the substrate away from the surface of the holding and heating member at the time of protrusion, and mount the substrate on the surface of the holding and heating member at the time of immersion, and the substrate by the support pins. The substrate is supported by immersing the support pin in a supporting state in which the atmosphere in the processing chamber is replaced with an inert gas and the atmosphere replaced with the inert gas by the replacing means. A unit for placing the substrate on the surface of the holding and heating unit for heat treatment, a unit for measuring the temperature of the substrate to be heat treated, and a protrusion of the support pin after the end of the heat treatment, so that the substrate is heated. Separated from the surface of the holding and heating member,
When further the substrate is equal to or less than a predetermined temperature, and means for air release of the processing chamber is opened the lid
Heat treatment device and holding cooling that cools the substrate while holding it
A base with a reject plate and the substrate to the heat treatment device
In order to move in and out, the holding cooling plate is connected to the heat treatment device.
Device having drive means for moving forward and backward
And .

The processing system of the present invention, the above process shea
In the stem , the replacement means includes a jetting means for jetting an inert gas into the processing chamber.

The processing system of the present invention, the above process shea
In the stem , the ejection of the inert gas by the ejection means is controlled according to the temperature of the substrate.

The processing system of the present invention, the above process shea
The stem is placed on the holding cooling plate with height adjustable.
Placed so as to separate the substrate from the holding cooling plate.
It is characterized by further comprising an adjusting support pin for supporting .

In the present invention, when a substrate coated with a coating solution that oxidizes at a high temperature is heat-treated, the gas concentration such as the oxygen concentration of the atmosphere to be heat-treated is controlled to change the treatment atmosphere to an inert gas. Since the substrate is heat-treated by substitution, the substrate can be heat-treated while suppressing the oxidation of the coating liquid.

In particular, while the substrate is supported by the support pins and separated from the surface of the holding and heating member, the atmosphere in the processing chamber is replaced with an inert gas, and the support pins are immersed.
The substrate is heat-treated in close contact with the surface of the holding and heating member, and after completion of the heat treatment, the support pins are projected to separate the substrate from the surface of the holding and heating member, and after a predetermined time elapses or the temperature of the substrate falls below a predetermined temperature If the lid is opened and the inside of the processing chamber is opened to the atmosphere when the temperature becomes low, the replacement with the inert gas, the heat treatment after the replacement, and the cooling after the heat treatment can be easily realized. If it is attempted to realize the replacement with an inert gas and the heat treatment after the replacement by controlling the temperature of the holding and heating member, it is difficult to control the temperature. It will be difficult to return to room temperature).

Further, particularly in the processing system of the present invention, since the height of the adjusting support pin arranged on the holding and cooling plate of the transfer device can be adjusted, the structure is very simple and suitable. Fine adjustment for proper cooling can be easily performed.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. 1 is a plan view of a film forming system according to an embodiment of the present invention, FIG. 2 is a front view of the film forming system shown in FIG. 1, and FIG. 3 is a rear view of the film forming system shown in FIG.

As shown in FIGS. 1 to 3, the film forming system 1 has a structure in which a cassette station 2 and a processing station 3 are integrally connected. In the cassette station 2, a plurality of wafers W, for example, a unit of 25 wafers, is loaded into the film forming system 1 from the outside and is unloaded from the film forming system 1 to the outside in the cassette station 2. Further, the wafer W is carried in and out of the cassette C. In the processing station 3, various single-wafer processing units that perform predetermined processing on the wafers W one by one during the film forming process are arranged in multiple stages at predetermined positions.

In the cassette station 2, as shown in FIG. 1, a plurality of cassettes C, for example, four cassettes C are provided at the positions of the positioning protrusions 10a on the cassette mounting table 10, with their respective wafer W entrances and exits facing the processing station 3 side. And are placed in a line in the X direction (vertical direction in FIG. 1). The wafer carrier 15 that is movable in the cassette C arrangement direction (X direction) and in the wafer W arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C is movable along the conveyance path 15a. Yes, each cassette C is selectively accessed.

The wafer carrier 15 is configured to be rotatable in the θ direction, and as will be described later, an alignment unit (ALIM) and an extension unit belonging to the multi-stage unit section in the third processing unit group G3 on the processing station 3 side. You can also access (EXT).

In the processing station 3, as shown in FIG. 1, a vertical transfer type transfer device 20 is provided at the center thereof, and various processing units are arranged around it in a multi-stage integration in one set or in a plurality of sets. They are arranged to form a processing unit group. In such a film forming system 1, five processing unit groups G1, G2, G3, G4, G5 are arranged so that the first and second processing unit groups G1, G2 can be arranged.
Is disposed on the front side of the system, and the third processing unit group G
3 is arranged adjacent to the cassette station 2 and
Processing unit group G4 is disposed at a position facing the third processing unit group G3 with the transporting device 20 sandwiched therebetween, and the fifth processing unit group G5 indicated by a broken line can be disposed on the back side. ing. The transfer device 20 is configured to be rotatable in the θ direction and movable in the Z direction, and can transfer the wafer W to and from each processing unit.

In the first processing unit group G1, as shown in FIG. 2, the wafer W is placed on the spin chuck in the cup CP and rotated, and a predetermined position is set to a rotation center on the wafer W from a supply nozzle (not shown). The two spinner-type supply units 4 for supplying the processing liquid are stacked in two stages. Then, similarly to the first processing unit group G1, also in the second processing unit group G2, two spinner type supply units 4 are stacked in two stages. Here, the predetermined treatment liquid is a coating liquid that oxidizes at a high temperature, and specifically, an organic coating liquid such as plastic can be given as an example.

As shown in FIG. 2, this film forming system 1
A high-performance filter 23 such as a ULPA filter is provided at the upper part of each of the two zones (cassette station 2, processing station 3). When the air supplied from the upstream side of the high-performance filter 23 passes through the high-performance filter 23, particles and organic components are collected and removed. Therefore, the cassette mounting table 10, the transfer path 15a of the wafer transfer body 15, the first to second processing unit groups G1 and G2, and the third to fifth processing unit group G3 are passed through the high-performance filter 23. ,
Downflow of clean air from above is supplied to G4 and G5 in the direction of a solid arrow or a dotted arrow in FIG.

In the third processing unit group G3, as shown in FIG. 3, an oven-type processing unit for placing a wafer W on a mounting table and performing a predetermined process, for example, an alignment unit (ALIM) for alignment, an extension. A unit (EXT) and a heat treatment unit (BAKE) for performing heat treatment are stacked in a total of eight stages, for example.

In the fourth processing unit group G4, the wafer W
An oven-type processing unit for carrying out a predetermined processing by placing a substrate on a mounting table, for example, a heating processing unit (BA
KE) is stacked in a total of eight stages, for example.

As described above, the unit group for supplying the coating liquid and the unit group for performing the heat treatment are independent from each other, so that the heat treatment unit (BAKE) changes the supply unit 4 from the heat treatment unit (BAKE).
It is possible to reduce the thermal interference with. Particularly, in the present embodiment, since the temperature of the heat treatment in the heat treatment unit (BAKE) reaches around 400 ° C., it is effective to reduce the thermal interference in this way. On the other hand,
By making each unit group into a multi-stage configuration and consolidating the units, it is possible to reduce the size of the system and further improve the processing efficiency. In particular, it is possible to efficiently form a multi-layer film by achieving the multi-unit and the integration as described above.

4 and 5 are front views of the above-mentioned heat treatment unit (BAKE), and FIG. 6 is a plan view thereof. Here, FIG. 4 shows a state in which the support pins are retracted into the hot plate as described later, and FIG. 5 shows a state in which the support pins are projected from the hot plate. As shown in FIGS. 4 to 6,
A hot plate 31 for heat-treating the wafer W is arranged substantially at the center of the heat treatment unit (BAKE). For example, heat rays are embedded in the hot plate 31, and the temperature of the surface of the hot plate 31 is set to about 400 ° C. during the heat treatment. In addition, a plurality of, for example, three support pins 32 for delivering the wafer W are arranged on the hot plate 31 so that the support pins 32 can be retracted, and can be moved up and down by an elevating mechanism 33 arranged on the back surface of the hot plate 31. Has become.

A N 2 gas ejection pipe 34 is arranged around the hot plate 31 so as to surround the hot plate 31. A large number of ejection holes 35 are provided in the N2 gas ejection pipe 34, and N2 gas is ejected from the ejection holes 35 into the unit. Note that other inert gas such as Ar gas can be used instead of N2 gas.

A lid 36 is formed on the upper surface of the hot plate 31 so as to form a closed space with the hot plate 31.
Are arranged. The lid 36 can be moved up and down by an elevator mechanism (not shown). In addition, the lid 36
Has a structure that inclines upward toward the center,
An exhaust port 37 is provided in the center of the lid body 36. The exhaust port 37 is connected to an exhaust device such as a vacuum pump (not shown).

In this way, the N 2 gas jet pipe 34 is arranged in the lower part, the exhaust port 37 is provided in the upper part, and the exhaust port 3
7 has the above structure, the heat treatment unit (BA
The substitution with N2 gas in KE) can be performed efficiently.

Next, the operation of the heat treatment unit (BAKE) thus constructed will be described. Here, FIG. 7 shows a temporal change in the temperature of the wafer W in the heat treatment unit (BAKE) and the oxygen concentration in the unit. First, the support pin 32 is the hot plate 3
1, the wafer W having the coating liquid applied onto the support pins 32 is transferred from the transfer device 20 in a state in which the lid body 36 is opened and the lid body 36 is opened. Then, with the lid 36 closed, as shown in FIG. 5, with the support pins 32 protruding from the hot plate 31 supporting the wafer W, the N 2 gas ejection pipe 3
By discharging the N 2 gas from the ejection holes 35 of No. 4 and exhausting the inside of the unit from the exhaust port 37, the inside of the unit is replaced with the N 2 gas without heating the wafer W to a high temperature (FIG. 7).
Period). The period is preferably about 30 seconds, for example.

Next, as shown in FIG.
Immerses into the hot plate 31 to bring the wafer W into close contact with the surface of the hot plate 31 (period in FIG. 7). The period is preferably about 70 seconds. This allows
The wafer W is heat-treated at around 400 ° C., but since the inside of the unit is in the N 2 atmosphere at that time, the coating liquid applied to the surface of the wafer W is not oxidized.

Next, as shown in FIG.
Protrude from the hot plate 31 to separate the wafer W from the surface of the hot plate 31. Then, the lid 36 is kept closed for, for example, about 10 seconds. By this, N
The wafer W can be lowered to a temperature at which the coating film is not oxidized in the two atmospheres. After that, the lid 36 is opened to open to the atmosphere (period in FIG. 7). The period of is preferably about 30 seconds, for example. Then, the wafer W is carried out of the unit by the carrier device 20.

As described above, according to the present embodiment, when the wafer W coated with the coating liquid is heat-treated, the atmosphere to be heat-treated is replaced with N 2 gas to heat-treat the wafer W. Therefore, the wafer W can be heat-treated while suppressing the oxidation of the coating liquid.

In the above embodiment, the atmosphere is opened after waiting for a predetermined time. However, for example, the temperature of the wafer W to be heat-treated is measured, for example, a thermocouple (for example, provided in a hot plate). A temperature measuring unit may be provided so as to open to the atmosphere when the temperature of the wafer W becomes equal to or lower than a predetermined temperature. As a result, the temperature of the wafer W can be completely lowered before opening to the atmosphere, and the oxidation of the coating film can be more effectively prevented. At that time, the ejection control of the N2 gas ejected from the ejection hole 35 of the N2 gas ejection pipe 34 may be performed. For example, as shown in FIG. 8, an opening / closing valve 82 is provided between the N 2 gas ejection pipe 34 and the N 2 gas supply source 81, and the opening / closing valve 82 is configured to be opened / closed by a control unit 83. Then, based on the measurement result by the temperature measuring means, the opening / closing valve 82 is opened and the ejection hole 35 of the N 2 gas ejection pipe 34 is opened until the temperature of the wafer W becomes equal to or lower than a predetermined temperature.
The N2 gas may be further ejected, and when the temperature becomes equal to or lower than a predetermined temperature, the opening / closing valve 82 may be closed to stop the ejection of the N2 gas from the ejection hole 35 of the N2 gas ejection pipe 34.

Next, another embodiment of the present invention will be described. FIG. 9 is a front view showing the configuration of the processing system according to this embodiment. As shown in FIG. 9, in the chamber 41, the heat treatment unit (BAK) shown in FIGS.
E) is installed and the heat treatment unit (BAK
E) A transfer device 4 for loading / unloading the wafer W to / from
2 are arranged. Here, the inside of the chamber 41 is N2.
The atmosphere is an inert gas such as gas or Ar gas.
Accordingly, it is possible to prevent the coating film applied on the wafer W from being oxidized during the cooling transfer.

The transfer device 42 has a base 43, and a holding / cooling plate 44 for holding and cooling the wafer W is arranged on the base 43. The holding / cooling plate 44 is movable back and forth with respect to the heat treatment unit (BAKE) by a drive mechanism (not shown). In addition, a cooling mechanism (not shown) is embedded in the holding / cooling plate 44, so that the wafer W held by the holding / cooling plate 44 after being heat-treated by the heat treatment unit (BAKE). Is being cooled rapidly.

Here, on the surface of the holding / cooling plate 44, a plurality of, for example, three adjusting support pins 45 for supporting the wafer W so as to be separated from the holding / cooling plate 44 are arranged. As shown in FIG. 10, each adjustment support pin 45 is screwed to the holding cooling plate 44. As a result, the distance between the surface of the holding cooling plate 44 and the adjustment support pin 45 can be adjusted. Therefore, it is possible to easily perform fine adjustment for performing appropriate cooling with a very simple configuration. For example, there is a case where it is desired to change the cooling rate during cooling according to the film thickness of the wafer W. In this embodiment, by adjusting the distance between the surface of the holding / cooling plate 44 and the adjustment support pin 45, it is possible to change the temperature decrease rate (in FIG. 11) as shown in FIG.

When the processing system shown in FIG. 9 is applied to the system 1 shown in FIG. 1, the processing units G3 and G4 are arranged as shown in FIG. In that case, the heat treatment unit (BAKE) shown in FIGS. 4 to 6 may be mixed. Particularly, in that case, it is preferable to dispose on the side of the processing unit group G3. This is because the processing system in FIG. 9 interferes with the processing unit G5 if the processing system is arranged in the processing unit group G4.

Although the present invention has been described by taking the heat treatment for the semiconductor wafer as an example, it is naturally applicable to a system for heat treating a glass substrate for LCD or the like.

[0047]

As described above, according to the present invention,
When heat-treating a substrate coated with a coating liquid that oxidizes at high temperature, the substrate is heat-treated by controlling the gas concentration of the atmosphere to be heat-treated. It can be heat-treated.

In particular, in the present invention, the substrate is supported by the support pins and is separated from the surface of the holding and heating member, and the atmosphere in the processing chamber is replaced with an inert gas to immerse the support pins. The substrate is separated from the surface of the holding and heating member by protruding the support pins after the heating process is completed, and the substrate is separated from the surface of the holding and heating member. By making the air open to the atmosphere, the replacement with an inert gas, the heat treatment after the replacement, and the cooling after the heat treatment can be easily realized.

Further, particularly in the present invention, since the height of the adjustment support pin arranged on the holding cooling plate of the carrying device can be adjusted, a fine structure for performing appropriate cooling with a very simple structure. Adjustment can be easily performed.

[Brief description of drawings]

FIG. 1 is a plan view of a film forming system according to an embodiment of the present invention.

2 is a front view of the film forming system shown in FIG. 1. FIG.

3 is a rear view of the film forming system shown in FIG.

FIG. 4 is a front view of the heat treatment unit shown in FIG.

5 is a front view of the heat treatment unit shown in FIG.

6 is a plan view of the heat treatment unit shown in FIGS. 4 and 5. FIG.

FIG. 7 is a diagram showing changes over time in the temperature of the wafer W and the oxygen concentration in the unit in the heat treatment unit shown in FIG.

FIG. 8 is a configuration diagram showing a modified example of the present embodiment.

FIG. 9 is a front view showing a configuration of a processing system according to another embodiment of the present invention.

FIG. 10 is a diagram showing an example of the adjustment support pin shown in FIG.

FIG. 11 is a diagram showing an example of changing the temperature lowering rate.

FIG. 12 is a plan view of a film forming system according to another embodiment of the present invention.

[Explanation of symbols] 31 hot plate 32 support pins 34 N2 gas ejection pipe 35 ejection holes 36 Lid 41 chamber 42 Conveyor 44 Cooling holding plate 45 Adjustment support pin BAKE heat treatment unit W wafer

Front page continuation (72) Inventor Akira Yonemizu 2655 Tsukyu, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Tokyo Electron Kyushu Co., Ltd., Kumamoto Business Office (56) Reference JP 2000-40698 (JP, A) JP 2000- 138213 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/31 H01L 21/312 H01L 21/314 H01L 21/316 H01L 21/318

Claims (14)

(57) [Claims] 1. A method of heat-treating a substrate coated with a coating solution that oxidizes at high temperature in a heat treatment chamber, wherein the substrate is heat-treated by controlling the gas concentration of an atmosphere to be heat-treated. After finishing, use the cooling holding plate provided on the carrier to
Carry the substrate from the heat treatment device while cooling the substrate.
The heat treatment method is characterized in that 2. A method of heat-treating a substrate coated with a coating solution that oxidizes at high temperature in a heat treatment apparatus having a lid , wherein the substrate is housed in the heat treatment apparatus and the lid is provided. Close
That the steps, at low temperatures, a step of reducing the oxygen concentration in the treatment atmosphere, in a treatment atmosphere in which oxygen concentration is lowered, a step of heat-treating the substrate, after a predetermined time has elapsed from the end of the heat treatment, the lid Body
Opening process and cooling holding plate provided on the transfer device after opening the lid
While cooling the substrate with the heat treatment device from the substrate
And a step of carrying out the heat treatment method. 3. A substrate coated with an organic coating liquid is covered with a lid.
A method of performing heat treatment in a heat treatment apparatus having a body, the substrate being housed in the heat treatment apparatus and the lid being closed.
A step of replacing the processing atmosphere with an inert gas at a low temperature, a step of heat-treating the substrate in the processing atmosphere of the replaced inert gas, and a predetermined time after the end of the heat treatment, The lid
Opening process and cooling holding plate provided on the transfer device after opening the lid
While cooling the substrate with the heat treatment device from the substrate
And a step of carrying out the heat treatment method. 4. A method of heat-treating a substrate coated with a coating solution that oxidizes at high temperature in a heat treatment apparatus having a lid , wherein the substrate is housed in the heat treatment apparatus and the lid is provided. Close
That the steps, at low temperatures, a step of reducing the oxygen concentration in the treatment atmosphere, in a treatment atmosphere in which oxygen concentration is lowered, a step of heat-treating the substrate, when the substrate is equal to or less than a predetermined temperature, the Open the lid
Kicking process and, after opening the lid, the cooling holding plate provided on the conveying device
While cooling the substrate with the heat treatment device from the substrate
And a step of carrying out the heat treatment method. 5. A substrate coated with an organic coating liquid is covered with a lid.
A method of performing heat treatment in a heat treatment apparatus having a body, the substrate being housed in the heat treatment apparatus and the lid being closed.
A step of replacing the processing atmosphere with an inert gas at a low temperature, a step of heat-treating the substrate in the processing atmosphere of the replaced inert gas, and when the temperature of the substrate becomes equal to or lower than a predetermined temperature. , Open the lid
Kicking process and, after opening the lid, the cooling holding plate provided on the conveying device
While cooling the substrate with the heat treatment device from the substrate
And a step of carrying out the heat treatment method. 6. A processing chamber, a holding member that is disposed in the processing chamber and holds a substrate coated with an organic coating liquid, and a replacement unit that replaces an atmosphere in the processing chamber with an inert gas, Heat treatment means for heat-treating the substrate held by the holding member in the atmosphere replaced with the inert gas by the replacement means, and means for opening the inside of the processing chamber to the atmosphere after a lapse of a predetermined time from the end of the heat treatment. base having a heating treatment apparatus having the door, holding the cooling plate for cooling while holding the substrate
And the storage device for loading and unloading the substrate into and from the heat treatment apparatus.
The cooling plate can be moved back and forth with respect to the heat treatment device.
And a transport device having a driving unit for driving the processing system . 7. A processing chamber having an openable / closable lid, a holding and heating member which is disposed in the processing chamber and heats a substrate coated with an organic coating liquid while holding the substrate, and from the surface of the holding and heating member. A state in which the substrate can be retracted and is supported while being separated from the surface of the holding and heating member at the time of protrusion, and the substrate is mounted on the surface of the holding and heating member at the time of immersion, and the substrate is supported by the support pin. In the replacement means for replacing the atmosphere in the processing chamber with an inert gas, and by immersing the support pin in the atmosphere replaced with the inert gas by the replacement means, the substrate is the surface of the holding and heating member. Means for heat treatment by placing on the substrate, and after the end of the heat treatment, by projecting the support pin, the substrate is separated from the surface of the holding and heating member, further after a predetermined time has elapsed, the lid body Base having a heating device and means for the processing chamber is opened to the atmosphere you are, the holding cooling plate for cooling while holding the substrate
And the storage device for loading and unloading the substrate into and from the heat treatment apparatus.
The cooling plate can be moved back and forth with respect to the heat treatment device.
And a transport device having a driving unit for driving the processing system . 8. In the processing system according to claim 6 or 7, wherein the processing system the replacing means, characterized in that it comprises ejection means for ejecting an inert gas into the processing chamber. 9. A processing system In the processing system of claim 8, the ejection of the inert gas by the jet means, and controlling depending on the lapse of processing time. 10. A processing chamber, a holding member that is disposed in the processing chamber and holds a substrate coated with an organic coating liquid, a replacement unit that replaces an atmosphere in the processing chamber with an inert gas, Heat treatment means for heat-treating the substrate held by the holding member in an atmosphere replaced with an inert gas by the replacement means, means for measuring the temperature of the heat-treated substrate, and the end of the heat treatment. when the substrate after is equal to or less than a predetermined temperature, and a means for air release said processing chamber
A base having a heat treatment device and a holding / cooling plate for cooling while holding the substrate
And the storage device for loading and unloading the substrate into and from the heat treatment apparatus.
The cooling plate can be moved back and forth with respect to the heat treatment device.
And a transporting device having a driving unit for driving the processing system. 11. A processing chamber having an openable / closable lid, a holding / heating member which is disposed in the processing chamber and heats a substrate coated with an organic coating liquid while holding the substrate, and from the surface of the holding / heating member. A state in which the substrate can be retracted and is supported while being separated from the surface of the holding and heating member at the time of protrusion, and the substrate is mounted on the surface of the holding and heating member at the time of immersion, and the substrate is supported by the support pin. In the replacement means for replacing the atmosphere in the processing chamber with an inert gas, and by immersing the support pin in the atmosphere replaced with the inert gas by the replacement means, the substrate is the surface of the holding and heating member. Means for heat-treating the substrate placed on the substrate, means for measuring the temperature of the substrate to be heat-treated, and after the heat treatment is completed, the support pin is projected to hold the substrate on the holding and heating member table. Spaced from the surface, when further the substrate is equal to or less than a predetermined temperature, heating and a means for air release of the processing chamber is opened the lid
A base having a processing apparatus and a holding cooling plate that cools the substrate while holding it
And the storage device for loading and unloading the substrate into and from the heat treatment apparatus.
The cooling plate can be moved back and forth with respect to the heat treatment device.
And a transport device having a driving means for
Processing system to collect. 12. The processing system according to claim 10 or 11.
In the system, the replacement means includes a jetting means for jetting an inert gas into the processing chamber. 13. In the processing system of claim 12, the ejection of the inert gas by the jet means, the heat treatment apparatus, characterized by controlling in accordance with the temperature of the substrate. 14. The method according to any one of claims 6 to 13.
The processing system described above, The substrate is disposed on the holding cooling plate in an adjustable height.
Adjustment support for supporting the so as to be separated from the holding cooling plate
A processing system further comprising a pin.