JP5399153B2 - Vacuum processing apparatus, vacuum processing system and processing method - Google Patents

Description

  The present invention relates to a vacuum processing apparatus that performs plasma processing or the like on an object to be processed such as a glass substrate for a flat panel display (FPD) in a vacuum state, a vacuum processing system including the vacuum processing apparatus, and a processing method.

  In an FPD manufacturing process typified by a liquid crystal display (LCD), various processes such as etching and film formation are performed on an object to be processed such as a glass substrate under vacuum. In order to perform the process using plasma, a vacuum processing apparatus including a processing container that can be evacuated is used. Further, as a mechanism for transporting an object to be processed to a vacuum processing apparatus, a vacuum transport apparatus including a transport arm that can rotate and extend and contract to support the object to be processed under vacuum is used.

  In recent years, in order to improve the production efficiency of FPD, the request | requirement of the enlargement with respect to a to-be-processed object has increased, and it exists in the tendency for a vacuum processing apparatus and a vacuum conveyance apparatus to enlarge corresponding to it. At present, a large glass substrate having a side exceeding 2 m may be handled as a target object, and it is certain that the size of the target object will further increase in the future. Therefore, it is inevitable to increase the size of the vacuum processing apparatus and the vacuum transfer apparatus.

  Delivery of the object to be processed from the vacuum transfer device to a mounting table on which the object to be processed is placed in the processing container of the vacuum processing apparatus is performed via a lifter pin mechanism configured to be movable up and down. When transferring the object to be processed using this lifter pin mechanism, a sufficient height margin is provided so that the support member (fork) of the transfer arm can be safely inserted and retracted between the object to be processed and the mounting table at the transfer position. is necessary. In particular, when delivering a large object to be processed, it is necessary to set the drive stroke of the lifter pin in consideration of the amount of bending of the object to be processed, and the height of the processing container must be increased accordingly. I don't get it.

  In addition, as the vacuum transfer device is increased in size in response to the increase in the size of the object to be processed, the transfer arm that expands and contracts and swivels while supporting the object to be processed has higher rigidity and drive performance. Desired. Since the vacuum transfer device needs to be designed so that the transfer arm can turn while supporting a large object to be processed, it is necessary to provide a large container (transfer container), which requires a large installation area. come. However, unlike the case where the object to be processed is transported at atmospheric pressure, a transport container that performs vacuum transport has a limit to increase in size because it needs rigidity to resist external atmospheric pressure. In the future, it is expected that the size of the object to be processed will exceed the size that can be produced and transported as the processing object becomes larger. Furthermore, the increase in size of the transfer arm and the transfer container inevitably leads to an increase in materials and processing costs.

  As a method of transporting the object to be processed without using the transport arm, for example, a method of transporting the object to be processed using a roller, or by injecting a gas to the back side of the object to be processed, the object to be processed is levitated. And is used in in-line processing devices and the like. The latter levitation conveyance is performed in a non-contact manner on the object to be processed, so that problems such as particles hardly occur and is suitable for conveyance of a large substrate.

  As a technology related to levitation transport, by blowing process gas or transport gas to the substrate under atmospheric pressure or pressure near atmospheric pressure, the substrate has a transport means that lifts and transports the substrate, A plasma processing apparatus that performs etching processing, ashing processing, or thin film formation has been proposed (Patent Document 1). In the technique of this Patent Document 1, it is assumed that levitation conveyance is performed at atmospheric pressure or a pressure near atmospheric pressure, and levitation conveyance in a vacuum state is not assumed. In addition, since the substrate is floated and moved, a process such as etching is performed on the lower surface side of the substrate, so that a general plasma process is performed on the upper surface side of the substrate while the substrate is mounted on the mounting table. It is a special technology that is different from the device configuration.

  As another technique related to levitation conveyance, one of the two vacuum chambers that are in a floating state by the gas ejected from the gas ejection holes of the guide plates of one and the other vacuum chambers in a state where the two adjacent vacuum chambers are in communication with each other. There has been proposed a semiconductor manufacturing apparatus for transporting a substrate mounted on a tray by moving the tray of the tank along the longitudinal direction of the guide plate onto the guide plate of the other vacuum tank by a transport arm (patent) Reference 2). The technique disclosed in Patent Document 2 is a method in which a substrate is floated and conveyed in a vacuum state, but is a method in which a substrate is mounted on a tray using a tray, and the substrate alone is not floated and conveyed. In addition, the use of a tray enables the substrate to be transported stably, but on the other hand, the tray itself tends to cause particles, and it is difficult to control the temperature of the substrate in the etching and film formation processes. Also have.

JP 2004-207708 A WO2005 / 074020

  This invention is made | formed in view of the said situation, The 1st objective is to provide the vacuum processing apparatus which can suppress the magnitude | size of a vacuum processing container as much as possible even if a to-be-processed object enlarges. A second object of the present invention is to provide a vacuum processing system capable of transporting an object to be processed to a vacuum processing apparatus without using a large transport arm.

In order to solve the above problems, a vacuum processing apparatus according to the present invention is a vacuum processing apparatus that performs a predetermined process in a vacuum state on an object to be processed,
A processing container having an opening for carrying in and out a workpiece;
A mounting table for supporting an object to be processed inside the processing container;
With
The table above is
A mounting table main body having a mounting surface for mounting the object to be processed;
A plurality of gas injection holes formed in the mounting surface;
A gas flow path formed in the interior of the mounting table main body in communication with the gas injection hole;
A gas supply source connected to the gas flow path and configured to be able to switch between the levitation gas and the heat medium gas;
When the object to be processed is delivered, the object to be processed is levitated from the mounting surface by injecting the levitation gas from the gas injection hole to the back surface of the object to be processed with a predetermined pressure. In this state, the object to be processed is transferred to and from a vacuum transfer device provided outside the processing container.

The vacuum processing system according to the present invention is
A vacuum processing apparatus for performing a predetermined process on a workpiece in a vacuum state;
A vacuum transfer device that is disposed adjacent to the vacuum processing device and transfers an object to be processed under vacuum conditions;
A vacuum processing system comprising:
The vacuum processing apparatus includes:
A processing container having an opening for carrying in and out a workpiece;
A mounting table for supporting an object to be processed inside the processing container;
With
The table above is
A mounting table main body having a mounting surface for mounting the object to be processed;
A plurality of gas injection holes formed in the mounting surface;
A gas flow path formed in the interior of the mounting table main body in communication with the gas injection hole;
A gas supply source connected to the gas flow path and configured to be able to switch between the levitation gas and the heat medium gas;
When the object to be processed is delivered, the object to be processed is levitated from the placement surface by injecting the levitation gas from the gas injection hole toward the back surface of the object to be processed with a predetermined pressure. In such a state, the workpiece is transferred to and from the vacuum transfer device,
The vacuum transfer device is
A transport container having a transport opening for transporting a workpiece;
A transfer stage provided in the transfer container;
A pair of guide devices arranged on both sides of the transfer stage to guide the object to be processed in the transfer direction;
A levitation gas supply source for supplying gas to the transfer stage;
With
The transfer stage is
The stage body,
A plurality of floating gas injection holes formed on the upper surface of the stage body;
A floating gas channel communicating with the floating gas injection holes,
The guide apparatus in a state where the object to be processed is levitated from the upper surface of the stage body by injecting the gas for levitating toward the back surface of the object to be processed from the levitation gas injection hole with a predetermined pressure. The object to be processed is guided by and carried into the vacuum processing apparatus or carried out of the vacuum processing apparatus.

The treatment method of the present invention is a treatment method for treating a workpiece under vacuum conditions,
A processing container having an opening for loading and unloading the object to be processed; a mounting table that supports the object to be processed inside the processing container; and a gas supply source that supplies gas to the mounting table. The mounting table main body having a mounting surface on which the object to be processed is mounted, a plurality of gas injection holes formed on the mounting surface, and the inside of the mounting table main body communicating with the gas injection holes A vacuum processing apparatus comprising: a gas flow path formed on the gas flow path; and a gas supply source connected to the gas flow path and configured to be capable of switching between a levitation gas and a heat medium gas ;
A transport container having a transport opening for transporting the object to be processed, a transport stage provided in the transport container, and a pair of guides disposed in both sides of the transport stage to guide the target object in the transport direction. A levitation gas supply source that supplies gas to the transfer stage, and the transfer stage includes a stage body and a plurality of levitation gas jets formed on the upper surface of the stage body. a hole, a vacuum transfer device, wherein a floating gas injection holes for floating gas passage communicating with, provided with, disposed adjacent to the vacuum processing apparatus,
Using a vacuum processing system with
In the vacuum transfer device, by injecting the levitation gas from the levitation gas injection hole toward the back surface of the object to be processed at a predetermined pressure, the object to be processed is levitated from the upper surface of the stage body. A step of guiding the object to be processed by the guide device and transporting it to the vacuum processing device;
At the time of delivery of the object to be processed, the object to be processed is levitated from the mounting surface by injecting the levitation gas from the gas injection hole toward the back surface of the object to be processed at a predetermined pressure. Passing the object to be processed from the vacuum transfer device to the vacuum processing device;
Performing a predetermined process in a state where the object to be processed is placed on the placement surface;
By injecting the gas from the gas injection hole toward the back surface of the object to be processed at a predetermined pressure, the object to be processed is received by the vacuum transfer device in a state where the object to be processed is levitated from the mounting surface. Passing, and
It is preferable to provide.

  According to the vacuum processing apparatus of the present invention, the deflection of the object to be processed is minimized by injecting the gas from the gas injection hole toward the back surface of the object to be processed at a predetermined pressure, thereby reducing the size of the processing container. Is possible. Further, when delivery is performed in a state in which the object to be processed is floated, a lifter pin mechanism is not required, and the processing container can be miniaturized, and the manufacturing cost can be suppressed. In particular, since the height of the processing container can be suppressed, processing in a narrow gap is facilitated.

  In addition, when the levitation gas is used as a heat medium (for example, a back cooling gas) that transmits the temperature of the mounting table to the object to be processed, the back cooling gas supply mechanism and the levitation gas supply mechanism can be used together. The above effects can be obtained with a simple apparatus configuration.

  In addition, according to the vacuum processing system of the present invention, gas is injected toward the back surface of the object to be processed at a predetermined pressure from the floating gas injection hole of the transfer stage of the vacuum transfer device, and the object to be processed is levitated. In this state, the object to be processed can be transferred to and from the vacuum processing apparatus without using a transfer arm that can be expanded and contracted and swiveled by being guided by the guide device. Therefore, it is possible to reduce the size of the vacuum transfer container, and in particular, it is possible to realize a reduced installation space and manufacturing cost.

  In particular, by adopting the in-line method, for example, the length restriction in the longitudinal direction of an object to be processed such as a glass substrate for FPD is reduced, and a longer substrate than before can be processed.

  In addition, because it is a levitation transfer method, the inline transfer method is used without causing problems such as peeling electrification of the object to be processed due to contact with the transfer arm and fork, generation of particles, and damage to the object due to deflection of the substrate. Throughput can be improved.

It is a horizontal sectional view showing a schematic structure of a vacuum processing system according to an embodiment of the present invention. It is a sectional side view of the vacuum processing system of FIG. It is explanatory drawing which shows the structural example of a holding member. It is explanatory drawing which shows another structural example of a holding member. It is principal part sectional drawing of the vacuum processing system with which it uses for description of a floating assistance apparatus. It is a horizontal sectional view of the vacuum processing system used for description of another example of composition of a guide device. It is a sectional side view of the vacuum processing system of FIG. It is a principal part horizontal sectional view of the vacuum processing system with which it uses for description of an upper gas injection mechanism. It is side sectional drawing of the vacuum conveying apparatus with which it uses for description of an upper gas injection mechanism. It is a principal part enlarged view of FIG. It is drawing explaining the example of arrangement | positioning of the engaging part in the holding member of a guide apparatus. It is drawing explaining another example of arrangement | positioning of the engaging part in the holding member of a guide apparatus. It is drawing explaining the state which supported four points | pieces in the floating experiment. It is drawing explaining the state which supported eight points | pieces in the floating experiment. It is drawing explaining the state (before floating) which supported the board | substrate with the holding member. It is drawing which expanded the part enclosed with the broken line of FIG. 13A. It is drawing which illustrates typically the flow of the gas injected on the back surface of a board | substrate. It is drawing which illustrates typically the state where the board | substrate has floated stably. It is drawing which illustrates typically the state where the board | substrate has not floated stably.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a horizontal sectional view showing a schematic configuration of a vacuum processing system 1 according to the present embodiment, and FIG. 2 is a side sectional view.

  The vacuum processing system 1 includes a plasma processing apparatus 100 that performs a plasma etching process on a liquid crystal display (LCD) glass substrate (hereinafter simply referred to as a “substrate”) S as an object to be processed, and both sides of the plasma processing apparatus 100. Are provided with a first vacuum transfer device 200a and a second vacuum transfer device 200b, respectively. The first vacuum transfer device 200a, the plasma processing apparatus 100, and the second vacuum transfer device 200b are connected in the order in which the substrate S is transferred in this order. In addition, the conveyance direction of the board | substrate S was shown by the arrow in FIG.

  The plasma processing apparatus 100 is provided with a processing container 101, a mounting table 103 that is also a lower electrode disposed in the processing container 101, and a counter for the mounting table 103, and introduces a processing gas into the processing container 101. And a shower head 105 that also functions as an upper electrode. Note that illustration of a gas supply mechanism, piping, and the like for supplying a processing gas for plasma processing to the shower head 105 is omitted.

The processing container 101 has a shallow box shape. The processing container 101 is configured as a pressure-resistant container that can withstand a predetermined degree of vacuum, for example, 1 × 10 ⁻⁴ Pa. For example, the processing container 101 is formed of aluminum whose surface is anodized (anodized). Openings 101a and 101b for carrying in / out the substrate S are formed on two side surfaces of the processing container 101 facing each other. Further, at the bottom of the processing vessel 101, exhaust ports 101c are provided at a plurality of locations (four locations in FIG. 1), and each exhaust port 101c is connected to a vacuum pump via an exhaust pipe (not shown).

  The mounting table 103 is formed inside the main body 103a in communication with the main body 103a having the mounting surface F on which the substrate S is mounted, a plurality of gas injection holes 103b formed in the mounting surface F, and the gas injection holes 103b. The gas flow path 107 is provided. The gas injection hole 103b also functions as a heat medium injection hole that injects a heat medium that conveys the temperature of the mounting table 103 to the substrate S. In FIG. 1, the arrangement shape of the gas injection holes 103b on the placement surface F is a double rectangle inside and outside in plan view, but is not limited to this. The mounting table 103 may include an electrostatic chuck mechanism (not shown) in order to fix the substrate S to the mounting surface F.

  As shown in FIG. 2, the inner diameter of each gas injection hole 103b communicating with the gas flow path 107 is narrow, so that the injection pressure at the gas injection hole 103b can be increased. A gas supply source 111 is connected to the gas flow path 107 via a gas pipe 109. The gas pipe 109 is provided with valves, pumps, etc., but illustration thereof is omitted.

The gas supply source 111 is configured to supply a single type or a plurality of types of gas. In the present embodiment, an inert gas such as N ₂ used for levitation and a gas having high thermal conductivity such as He used as a heat medium during the process can be switched and used. A gas having high thermal conductivity is jetted toward the back surface of the substrate S, thereby functioning as a heat medium (back cooling gas) that transmits the temperature of the mounting table 103 to the substrate S, and the temperature rise of the substrate S due to plasma is increased. suppress.

  The first vacuum transfer is performed in a state where the substrate S is floated from the mounting surface F by injecting gas from the gas supply source 111 to the back surface of the substrate S through the gas injection hole 103b with a predetermined pressure. The substrate S can be transferred between the apparatus 200a or the second vacuum transfer apparatus 200b. Thus, in this Embodiment, since the lifter pin mechanism is not essential for delivery of the board | substrate S, when not using a lifter pin mechanism, the height of the processing container 101 can be suppressed. Therefore, a material and processing cost of the processing container 101 can be reduced, and a plasma process in which a narrow gap having a narrow distance (gap G) between the upper electrode (shower head 105) and the mounting surface F of the mounting table 103 is suitable. There is an advantage that can be easily implemented.

Further, by switching between a gas having high thermal conductivity such as He and an inert gas such as levitation N ₂ as the gas supplied from the gas supply source 111, the gas pipe 109, the gas flow path 107, and the gas injection hole 103b can also be used as a back cooling gas supply channel and a substrate S floating gas supply channel.

  An insulating plate 113 is disposed below the mounting table 103. In addition, a focus ring 115 made of an insulating material such as ceramic is provided on the mounting table 103 so as to surround the mounting surface F. The focus ring 115 plays a role of converging plasma on the mounting table 103. Further, a shield plate 117 made of an insulating material such as ceramic is provided on the side surface of the mounting table 103.

  The first vacuum transfer device 200a includes a transfer container 201 disposed adjacent to the plasma processing apparatus 100, a transfer stage 203 provided in the transfer container 201, and a transfer stage 203 provided on both sides of the transfer stage 203. And a pair of guide devices 205 and 205 for guiding the substrate S in the direction.

The transfer container 201 has a shallow box shape. The transfer container 201 is configured as a pressure-resistant container that can withstand a predetermined degree of vacuum, for example, 1 × 10 ⁻¹ Pa. For example, the transfer container 201 is formed of aluminum whose surface is anodized (anodized). On the two side surfaces of the transport container 201 facing each other, transport openings 201a and 201b for carrying the substrate S in and out are formed. Further, at the bottom of the transport container 201, exhaust ports 201c are provided at a plurality of locations (only two locations are shown in FIG. 1), and each exhaust port 201c is connected to a vacuum pump via an exhaust pipe (not shown).

  The transfer stage 203 has a stage main body 203a. The stage main body 203a has a thin plate shape and is made of a material such as aluminum or stainless steel. The transfer stage 203 has a plurality of levitation gas injection holes 207 formed on the upper surface of the stage main body 203 a and a levitation gas flow path 209 formed in the stage main body 203 a and communicating with the levitation gas injection holes 207. And have.

  As shown in FIG. 2, the inner diameter of each levitation gas injection hole 207 communicating with the levitation gas flow path 209 is narrow, so that the injection pressure at the levitation gas injection hole 207 can be increased. Yes. The levitation gas flow path 209 is connected to the levitation gas supply source 211 via the levitation gas pipe 210. The levitation gas pipe 210 is provided with valves, pumps, etc., but illustration thereof is omitted. Further, the shape, interval and number of the floating gas injection holes 207 formed in the stage main body 203a may be any shape, interval and number as long as the substrate S can be lifted.

  As the levitation gas supplied from the levitation gas supply source 211, for example, clean dry air, inert gas, or the like can be used.

  The guide device 205 includes a holding member 213 that holds the substrate S, a rail 215 that is provided in a straight line parallel to the transport direction and defines the moving direction of the holding member 213, and supports the holding member 213 on the rail 215. A movable support 217 that reciprocates and a drive source (not shown) that reciprocates the movable support 217 are provided.

  In the present embodiment, a pair of holding members 213 are arranged in a positional relationship facing each other in the width direction of the substrate S (the direction orthogonal to the transport direction). That is, the pair of holding members 213 disposed on both sides with the substrate S interposed therebetween is configured to be able to reciprocate in the transport direction in parallel and synchronously, and the two holding members 213 can move the substrate S. The movement direction of the floating substrate S is regulated so as to be sandwiched from both sides. In this way, by restricting the substrate S from both sides in the width direction, errors in the transport direction of the substrate S can be reduced and transport position accuracy can be increased. The method of regulating the substrate S is not limited to both sides, but it is possible to regulate only one side, or the leading or trailing edge of the substrate S. However, the transport position accuracy and transport reliability can be improved. It is preferable to restrict at both sides from the viewpoint of increasing.

  The holding member 213 engages and holds the side of the substrate S, and an arm extending in the horizontal direction (horizontal direction) so that the engaging portion 213a can be inserted into the processing container 101. Part 213b. The base end side of the arm part 213b is fixed to the movable support 217. The configuration of the engaging portion 213a of the holding member 213 is not limited as long as the moving direction of the substrate S in a floating state can be regulated. As an example of the engaging portion 213a, a clamp mechanism that holds the substrate S can be cited. For example, the clamp device 221 shown in FIG. 3 drives the shaft 225 and a pair of upper and lower contact members 223a and 223b, a shaft 225 that moves the distance between the contact members 223a and 223b closer to or away from each other. And a drive unit such as a motor (not shown).

  In the clamping device 221, the lower contact member 223b is raised by rotating the shaft 225 in the direction indicated by the arrow in FIG. 3 by, for example, a drive unit, and the edges of the substrate S are brought into contact with the contact members 223a and 223b. And can be clamped between. In this case, by rotating the shaft 225 in the reverse direction, the contact member 223b is lowered to increase the distance between the contact member 223a and the clamp of the substrate S is released.

  Further, as another example of the engaging portion 213a, an electrostatic adsorption mechanism that adsorbs the substrate S by an electrostatic force typified by a Coulomb force can be employed. For example, the electrostatic adsorption device 231 shown in FIG. 4 includes an adsorption base material 233 made of a dielectric, a first electrode 235a and a second electrode 235b embedded in the adsorption base material 233, and the first DC power supplies 237a and 237b for applying a DC voltage to the electrode 235a and the second electrode 235b, respectively. Further, the DC power supply 237a and the first electrode 235a, and the DC power supply 237b and the second electrode 235b are electrically connected by power supply lines 239a and 239b, respectively. The electrostatic adsorption device 231 applies a DC voltage to the first electrode 235a and the second electrode 235b in a state where the adsorption base material 233 is inserted between the edge of the substrate S that has floated and the transfer stage 203. Thus, the edge of the substrate S is electrostatically attracted and fixed by the Coulomb force. The substrate S can be unfixed by stopping the application of voltage from the DC power sources 237a and 237b to the first electrode 235a and the second electrode 235b. In FIG. 4, the bipolar electrostatic chucking device 231 having the pair of electrodes 235a and 235b is taken as an example, but a monopolar electrostatic chucking mechanism may be used.

  The movable support 217 in the guide device 205 includes a rolling mechanism 217a such as a linear guide way, a roller, and a wheel for reciprocating on the rail 215, and is driven by power from a drive source (not shown). The mechanism for moving the movable support 217 is not particularly limited as long as the movable support 217 can be horizontally reciprocated. For example, in addition to a mechanical mechanism such as a pulley, a gear, and an air cylinder, a linear motor Etc. can also be used. In the guide devices 205 and 205 on both sides with the conveyance stage 203 in between, the two movable support bodies 217 are configured to move in parallel on the rail 215 in conjunction with each other.

  In the first vacuum transfer apparatus 200a having the above-described configuration, the levitation gas is injected from the levitation gas supply source 211 toward the back surface of the substrate S through the levitation gas injection hole 207 at a predetermined pressure. The substrate S can be guided to the plasma processing apparatus 100 by the guide device 205 in a state where the substrate S is lifted from the upper surface of the transfer stage 203 by several mm to several cm.

  The positioning of the transfer position of the substrate S between the guide device 205 of the first vacuum transfer device 200a and the mounting table 103 of the vacuum processing device 100 is performed by, for example, determining the amount of movement of the engaging portion 213a (or the movable support 217). It can be accurately grasped by detecting with a position detecting means (not shown) such as a linear scale.

  The configuration of the second vacuum transfer device 200b is the same as that of the first vacuum transfer device 200a except that it is mirror-image-symmetric with respect to the plasma processing apparatus 100. Description is omitted.

  Between the transfer container 201 and the processing container 101, a gate valve GV is provided as a shut-off means that can be opened and closed. The gate valve GV shuts off the atmosphere between the processing container 101 and the transfer containers 201 and 201 adjacent to both sides in the closed state, and allows the processing container 101 and the transfer containers 201 and 201 to communicate with each other in the open state. Allow movement. Note that a gate valve GV is also provided in the transfer opening 201a of each transfer container 201 so that the atmosphere from the outside of the vacuum processing system 1 can be shut off.

  As shown in FIG. 5, a levitation assisting device 121 that injects gas toward the back surface of the substrate S in the middle of conveyance can be provided between the opening 101 a and the mounting table 103 in the processing container 101. The levitation assisting device 121 is connected to the gas injection plate 125 having a plurality of gas injection holes 123, a drive rod 127 that supports the gas injection plate 125 and is driven up and down by a drive mechanism (not shown), and the gas injection holes 123. A gas supply source 129. A gas flow path 127 a is formed inside the drive rod 127, and the gas flow path 127 a is connected to a gas supply source 129 via a levitation assisting gas pipe 131. In FIG. 5, reference numeral 133 denotes an O-ring for ensuring airtightness between the drive rod 127 and the opening portion of the processing container 101. The levitation assisting gas pipe 131 is provided with valves, pumps, etc., but illustration thereof is omitted.

  The gas injection holes 123 are linearly arranged at predetermined intervals in the width direction of the substrate S (direction orthogonal to the transport direction of the substrate S). As the levitation assisting gas ejected from the gas ejection holes 123, for example, clean dry air, inert gas, or the like can be used.

  When the substrate S is transported, the driving mechanism raises the gas injection plate 125 to a position close to the substrate S as shown in FIG. It sprays toward the back surface of the substrate S. The floating assist gas prevents the substrate S from being bent due to its own weight during the transfer, and can improve the transfer reliability.

  When a predetermined process is performed on the substrate S, the height of the gas injection plate 125 is lowered below, for example, the mounting surface F of the mounting table 103 by the driving mechanism to rectify the flow of the processing gas in the processing container 101. Can be used as a baffle plate. By using the gas injection plate 125 of the levitation assisting device 121 also as a baffle plate for rectification, the reliability of levitation conveyance can be improved without complicating the device configuration.

  As described above, the levitation assisting device 121 causes the substrate S to bend due to its own weight in a region where the gas pressure for levitation of the substrate between the transfer stage 203 of the transfer container 201 and the mounting table 103 of the processing container 101 is weak. To prevent. The levitation assisting device 121 enables highly reliable levitation conveyance even when the distance between the conveyance stage 203 of the conveyance container 201 and the mounting table 103 of the processing container 101 becomes long.

The flow of substrate processing in the substrate processing system having the above configuration will be described.
First, the substrate S is carried into the first vacuum transfer device 200a from the outside by a transfer mechanism (not shown). The floating gas is ejected from the floating gas ejection hole 207 of the transfer stage 203 toward the back side of the substrate S, and the substrate S is floated above the transfer stage 203. In this state, the rear end of the substrate S is held by the holding member 213 of the pair of guide devices 205 in the transport direction. In addition, gas is also injected at a predetermined pressure from the gas injection hole 103b of the mounting table 103 of the plasma processing apparatus 100, and preparation for levitation conveyance is made. The gate valve GV between the first vacuum transfer apparatus 200a and the plasma processing apparatus 100 is opened, and the gate valve GV between the plasma processing apparatus 100 and the second vacuum transfer apparatus 200b is closed.

  Next, the movable support 217 is moved toward the plasma processing apparatus 100 on the rail 215, whereby the substrate S is levitated and transferred from the first vacuum transfer apparatus 200a to the plasma processing apparatus 100. At this time, the substrate assisting device 121 may be operated to inject the substrate assisting gas to the back surface of the substrate S to prevent the substrate S from bending (see FIG. 5). When the movable support 217 reaches the tip of the rail 215 (the end on the plasma processing apparatus 100 side), the substrate S enters the vacuum processing apparatus 100 (inside the processing container 101), and is held at that position. The holding by the member 213 is released.

  When the holding by the holding member 213 is released, the substrate S is in a state of being statically levitated by the gas from the gas injection hole 103b of the mounting table 103 of the plasma processing apparatus 100. In this way, the delivery of the substrate S from the first vacuum transfer apparatus 200a to the vacuum processing apparatus 100 is completed. Next, by gradually lowering the gas injection pressure from the gas injection holes 103 b, the substrate S is lowered and placed on the placement surface F of the placement table 103. Then, the substrate S is fixed by an electrostatic adsorption mechanism (not shown).

Next, the gate valve GV between the first vacuum transfer apparatus 200 a and the plasma processing apparatus 100 is closed, and a predetermined process such as plasma etching is performed on the substrate S in a state where the gate valve GV is mounted on the mounting table 103. During this process, the temperature of the substrate S can be adjusted by continuing to supply gas from the gas injection hole 103b to the back side of the substrate S at a predetermined pressure, for example, 100 to 400 Pa. During this process, it is desirable to switch the gas supplied from the gas ejection hole 103b to the back side of the substrate S to a gas having high thermal conductivity such as He instead of an inert gas such as N ₂ for flying.

  After the processing is completed, the gas supply from the gas injection hole 103b to the back surface of the substrate S is once stopped, and the fixation by the electrostatic adsorption mechanism is released. Thereafter, the gate valve GV between the plasma processing apparatus 100 and the second vacuum transfer apparatus 200b is opened. Next, the substrate S is lifted from the mounting surface F of the mounting table 103 by gradually increasing the gas injection pressure from the gas injection holes 103 b. In addition, the levitation gas is also injected from the levitation gas injection hole 207 of the conveyance stage 203 of the second vacuum conveyance device 200b at a predetermined pressure to prepare for levitation conveyance.

  In a state where the substrate S is lifted from the mounting surface F of the mounting table 103, the movable support 217 of the second vacuum transfer device 200b is moved along the rail 215 to the end on the plasma processing apparatus 100 side to hold the holding member. The end portion on the front end side of the substrate S is held by the engaging portion 213a of 213. Next, the movable support 217 of the second vacuum transfer device 200b is moved forward on the rail 215 in the transfer direction, thereby guiding the moving direction of the substrate S from the plasma processing apparatus 100 to the second vacuum transfer device. The substrate S is floated and conveyed to 200b. At this time, the substrate assisting device 121 may be operated to inject the substrate assisting gas to the back surface of the substrate S to prevent the substrate S from bending (see FIG. 5). When the movable support 217 reaches the tip of the rail 215 (the end on the downstream side in the transport direction) and most of the substrate S enters the second vacuum transport device 200b, the substrate S is placed on another transport mechanism (not shown). In order to deliver, the holding | maintenance of the board | substrate S of the floating state by the engaging part 213a of the holding member 213 is cancelled | released.

  As described above, the substrate transferred to the second vacuum transfer device 200b is transferred to the outside of the vacuum processing system 1 by a transfer mechanism (not shown). In addition, another vacuum processing device and another vacuum transport device may be alternately arranged on the downstream side in the transport direction of the second vacuum transport device 200b so as to continuously process different contents. Further, the substrate S that has been processed by the plasma processing apparatus 100 may be levitated and transferred back to the first vacuum transfer apparatus 200a. Further, the first vacuum transfer device 200a and the second vacuum transfer device 200b may be used as a vacuum preparatory chamber (load lock chamber) capable of alternately switching between the atmospheric pressure state and the vacuum state.

  1 and 2 show a configuration in which the substrate S is held at two locations by the engaging portions 213a of the pair of holding members 213 arranged with the substrate S interposed therebetween, but more locations are shown. It is also possible to hold the substrate S. For example, the vacuum processing system 1a shown in FIGS. 6 and 7 uses a holding member 213 having two engaging portions 213a and holds the substrate S at four corners. In this case, two corners on one end side of the substrate S are restricted in the width direction by a pair of engaging portions 213a and 213a provided in the middle of the pair of arm portions 213b. At the same time, the two corners on the other end side of the substrate S can be regulated in the width direction by the pair of engaging portions 213a and 213a provided at the tips of the pair of arm portions 213b. In this way, by holding the substrate S at the four corners, the direction accuracy of the levitation conveyance is increased, and the conveyance reliability can be further improved. Further, as will be described later, it is more preferable that the number of the engaging portions 213a in one holding member 213 is three or more in order to stably float the substrate S. As the configuration of the engaging portion 213a, for example, a clamping device 221 or an electrostatic chucking device 231 can be employed as described above. 6 and 7, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals, and the description thereof is omitted.

  Further, in the levitation transfer, when the gas pressure injected from the gas injection hole 207 of the transfer stage 203 to the back side of the substrate S is high, the central portion of the substrate S swells and the substrate S distorts upward (swells). Sometimes. When the substrate S is distorted or swollen, the gas pressure ejected from the gas ejection holes 207 becomes non-uniform in the plane of the substrate S, the floating posture of the substrate S becomes unstable, and the container S drops or containers fall during transportation. It is easy to contact with. A preferable configuration example for correcting such distortion and swelling of the substrate S is shown in FIGS. FIG. 8 is a horizontal cross-sectional view of the first vacuum transfer apparatus 200a provided with an upper gas injection mechanism 241 that corrects distortion of the substrate S by injecting gas onto the upper surface of the substrate S so as to face the transfer stage 203. . FIG. 9 is a side sectional view of the first vacuum transfer device 200a provided with the upper gas injection mechanism 241, and FIG. 10 is an enlarged view of a main part of FIG.

  The upper gas injection mechanism 241 includes a nozzle arm 243 disposed in a cross shape, for example, so as to face the transfer stage 203 above the substrate S. The arrangement shape of the nozzle arm 243 is not limited to the cross shape. The nozzle arm 243 has four end portions fixed to the upper surface of the engaging portion 213a of the holding member 213, respectively. A plurality of gas injection holes 245 are provided on the lower surface of the nozzle arm 243 (see FIG. 10). Each gas injection hole 245 communicates with a gas flow path (not shown) formed inside the nozzle arm 243, and this gas flow path is connected to a correction gas supply source (not shown) via a flexible pipe (not shown). Has been.

  The correction gas is injected from the gas injection hole 245 of the nozzle arm 243 toward the upper surface of the substrate S, thereby correcting the swelling of the central portion of the substrate S and making the substrate S parallel to the transfer stage 203. Can keep. That is, the upper gas injection mechanism 241 functions as a means for correcting the shape of the substrate S in the floating state. In this way, by providing the upper gas injection mechanism 241 and suppressing the distortion and swelling of the substrate S that is levitated and conveyed, the reliability of conveyance can be improved. In addition, the upper gas injection mechanism 241 is configured to be fixed to the holding member 213 of the guide device 205 and can be moved in synchronization with the substrate S. Can correct bulges.

  Further, the upper gas injection mechanism 241 is provided facing the transfer stage 203, and the flying height position of the substrate S can be finely adjusted by adjusting the pressure of the gas injected from above and below the substrate S, respectively. That is, the upper gas injection mechanism 241 can also function as a means for adjusting the flying height position of the substrate S.

  Next, a method of supporting the substrate S by the holding member 213 of the guide device 205 will be described. The holding member 213 of the guide device 205 preferably has a structure that can support the left and right sides of the substrate S at an equal height. For example, it is preferable to provide three or more engaging portions 213a on the holding member 213 (arm portion 213b) on one side of the pair of holding members 213 facing each other across the substrate S. As shown in FIG. 11A, it is preferable to provide four or more engaging portions 213a in one holding member 213. Further, as another configuration example, as shown in FIG. 11B, it is also preferable to form a structure that supports most of the side of the substrate S by forming the engaging portion 213a of the holding member 213 to be long.

  Here, a description will be given of an experimental result of examining whether or not a difference occurs in the floating posture of the substrate S due to the difference in the support portion by the holding member 213. 12A shows the case where the vicinity of the four corners of the substrate S is supported by the engaging portions 213a of the holding member 213 (hereinafter referred to as “four-point support”), FIG. 12B shows the left and right in the traveling direction in addition to the four corners of the substrate S. The case where the two sides are supported at a total of 8 locations (hereinafter referred to as “8-point support”) is shown. Note that the arrows in FIGS. 12A and 12B indicate the transport direction of the substrate.

First, as shown in FIGS. 12A and 12B, the substrate S was supported at four points or eight points by the engaging portion 213a of the holding member 213 in the processing container 101 of the plasma processing apparatus 100, respectively. At this stage, as shown in FIG. 13A, gas is not injected from the gas injection holes 103b formed on the mounting surface F, so that the central portion of the substrate S bends to the mounting surface F of the mounting table 103. It is in contact. In the present experiment, as shown in an enlarged view in FIG. 13B, the height of the support position of the substrate S by the engaging portion 213a (with respect to the placement surface F and the support position) with respect to the placement surface F of the placement table 103. The gap G1) was set to 5 mm. The pressure in the processing container 101 was set to a vacuum state of 1 × 10 ⁻² Pa. As in FIG. 1, the gas injection holes 103b are arranged in a double rectangular arrangement in plan view, and the interval (pitch) between adjacent gas injection holes 103b in each row is 30 mm. Moreover, the board | substrate S used the thing of the magnitude | size of 550 mm of short sides x 650 mm of long sides.

Next, N ₂ gas was injected toward the back surface of the substrate S from the gas injection hole 103 b of the mounting table 103 of the plasma processing apparatus 100. The behavior of the substrate S was observed by changing the flow rate of N ₂ gas in the range of 10 to 3000 ml / min (sccm). The evaluation was made in three stages: stable ascent (A), ascending but fluttering (B), and not ascending (C). In addition, the B determination “floating but fluttering” means that a stable posture cannot be maintained by alternately repeating a state in which the central portion of the substrate S bulges upward and a state in which the central portion dents downward. means. Table 1 shows the determination results in the case of 4-point support and 8-point support.

  From Table 1, in the case of four-point support (see FIG. 12A), the substrate S cannot be floated when the gas flow rate is 100 mL / min (sccm) or less, and it floats when the gas flow rate is 110 mL / min (sccm) or more. A stable posture could not be maintained. On the other hand, in the case of 8-point support (see FIG. 12B), the flow rate was too small to float the substrate S when the gas flow rate was 50 mL / min (sccm) or less, but when the gas flow rate was 60 mL / min (sccm) or more. I was able to surface stably.

  From the above results, it is possible to use the gas injection holes 103b for the back cooling gas arranged in a double rectangular shape in plan view without providing gas injection holes on the entire surface of the mounting table 103 by supporting eight points. The substrate S was stably levitated. In addition, in order to stably float the substrate S, it was confirmed that it is preferable to support not only the four corners of the substrate S but also the side (with respect to the traveling direction of the substrate S).

  With the four-point support, the posture of the substrate S is not stable, and the reason why stable floating is possible with the eight-point support can be rationally explained as follows. In the case of 8-point support, the center portion of the substrate S is bent downward by its own weight before rising, and the left and right sides are higher than the center portion. Therefore, the cross section in the width direction orthogonal to the traveling direction of the substrate S has a shape that curves downward and convex (see FIG. 13A). In the case of 8-point support, the cross-section in the width direction of the substrate S is substantially evenly lowered at any position by supporting the left and right sides so as to have the same height by the plurality of engaging portions 213a. A convexly curved shape.

  On the other hand, in the case of four-point support, the front and rear ends of the substrate S in the transport direction have a downwardly curved curved shape as in the case of eight-point support, but near the center in the transport direction (that is, the substrate S). In the vicinity of the center), the left and right sides are also bent downward. In other words, in the case of four-point support, all the sides except the four corners of the supported substrate S have a shape in which the vicinity of the midpoint is curved downward.

  It is considered that the gas injected to the back surface side of the substrate S forms an air flow along the back surface of the substrate S. In the case of eight-point support, the left and right sides of the substrate S are substantially equally higher than the central portion, so that the gas injected to the back surface of the substrate S is orthogonal to the traveling direction of the substrate S as shown in FIG. It is considered that a gas flow Gf that escapes from the left and right sides is formed. As a result, as shown in FIG. 14B, the posture of the substrate S is stable and can be stably floated with a shape in which the cross section in the width direction is convexly curved downward.

  On the other hand, in the case of four-point support, the flow of gas injected to the back side of the substrate S is not constant, and as a result of trying to escape back and forth and left and right, gas stays between the substrate S and the mounting surface F. It is considered that the state where the gas escapes and the state where the gas escapes from one side at a time are repeated. As a result, as shown in FIG. 15, the central portion of the substrate S alternately repeats a state in which it bulges upward and a state in which it protrudes downward (indented state), and a stable posture cannot be maintained.

  From the above, in order to stably float the substrate S, it is preferable to employ a support method that promotes the formation of the gas flow Gf from the back surface of the substrate S toward the left and right sides. For that purpose, at least three points (for example, near two corners and the middle point) on one side of the substrate S by one holding member 213, preferably four points (for example, two corners and two equal points between them). ). In order to obtain the same effect, for example, as shown in FIG. 11B, the entire engaging portion 213 a of the holding member 213 may be formed to support the entire side of the substrate S. Such a method of holding the substrate S can be applied not only to the plasma processing apparatus 100 but also to the case where the substrate S is supported by the holding member 213 in the first vacuum transfer device 200a and the second vacuum transfer device 200b.

  Further, in order to promote the formation of the gas flow Gf from the center of the back surface of the substrate S toward the left and right sides, the height position (the mounting surface F and the mounting surface F) is supported by the engaging portion 213a. The gap G1) to the support position is also important. By sufficiently taking this gap G1, even when the substrate S is bent convexly downward, the central portion (the portion closest to the mounting surface F) can be levitated. However, if the gap G1 is too large, the gas may escape too much and the substrate S may not be lifted. Therefore, for example, when the flying height of the central portion of the substrate S is 1 mm to 2 mm, the gap G1 is preferably set to 4 mm or more and 10 mm or less, and more preferably set to 5 mm or more and 8 mm or less. In addition, by setting the gap G1 within the above range, the posture before the substrate S is lifted becomes a downwardly curved shape, and the central portion can be stably lifted with the shape.

  Note that by providing the upper gas injection mechanism 241 shown in FIGS. 8 to 10, it is possible to effectively suppress the central portion of the substrate S from bulging upward, so that the cross section in the width direction of the substrate S protrudes downward. It is possible to more stably maintain a floating posture that is curved in a straight line.

  As described above, in the vacuum processing system 1, in the first vacuum transfer device 200a or the second vacuum transfer device 200b, the floating gas injection hole 207 of the transfer stage 203 is transferred to the back surface of the substrate S with a predetermined pressure. The levitation gas is sprayed toward the substrate, and the substrate S is transported while being guided by the guide device 205 in a state where the substrate S is lifted. Then, the substrate S can be transferred to and from the vacuum processing apparatus 100 without using a transfer arm that can be expanded and contracted and swiveled. Therefore, it is possible to reduce the size of the vacuum transfer container, and in particular, it is possible to realize a reduced installation space and manufacturing cost.

  In particular, by adopting the in-line method, for example, a substrate S such as a glass substrate for FPD has less restrictions on the length in the longitudinal direction, and it is possible to process a longer substrate S than before. .

  In addition, since it is a levitation transfer method, it does not cause problems such as peeling charging of the substrate S due to contact with the transfer arm and fork used in the transfer of the prior art, generation of particles, breakage of the substrate S, etc. Throughput can be improved by the method.

  Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications can be made. For example, in the above embodiment, the plasma processing apparatus 100 that performs the etching process is described as an example of the vacuum processing apparatus. However, the present invention is not limited to the etching process, and any processing apparatus that performs a predetermined process on the substrate under vacuum conditions may be used. The present invention can be applied without particular limitation, and can be applied to, for example, a film forming apparatus and an ashing apparatus.

  Moreover, in the said embodiment, although the glass substrate for liquid crystal displays (LCD) was mentioned as the example of to-be-processed object, other FPD substrates, for example, an electroluminescence (Electro Luminescence; EL) display, a plasma display panel ( PDP) and the like can be similarly processed. Further, the present invention is not limited to the FPD substrate, but can be applied to a solar cell panel substrate, for example.

  Furthermore, the present invention is not limited to the in-line method, and can also be applied to transfer of an object to be processed in a cluster-type vacuum processing system including a plurality of processing apparatuses.

  DESCRIPTION OF SYMBOLS 1 ... Vacuum processing system, 100 ... Plasma processing apparatus, 101 ... Processing container, 101a, 101b ... Opening part, 101c ... Exhaust port, 103 ... Mounting stand (lower electrode), 103b ... Gas injection hole, 105 ... Shower head (upper part) Electrode), 107 ... gas flow path, 109 ... gas piping, 111 ... gas supply source, 200a ... first vacuum transfer device, 200b ... second vacuum transfer device, 201 ... transfer container, 201a, 201b ... opening for transfer , 201c ... exhaust port, 203 ... transfer stage, 205 ... guide device, 207 ... levitation gas injection hole, 209 ... levitation gas flow path, 210 ... levitation gas piping, 211 ... levitation gas supply source, 213 ... holding Member, 213a ... holding part, 213b ... arm part, 215 ... rail, 217 ... movable support, GV ... gate valve, F ... mounting surface, S ... substrate

Claims (19)

A vacuum processing apparatus that performs predetermined processing on a workpiece in a vacuum state,
A processing container having an opening for carrying in and out a workpiece;
A mounting table for supporting an object to be processed inside the processing container;
With
The table above is
A mounting table main body having a mounting surface for mounting the object to be processed;
A plurality of gas injection holes formed in the mounting surface;
A gas flow path formed in the interior of the mounting table main body in communication with the gas injection hole;
A gas supply source connected to the gas flow path and configured to be able to switch between the levitation gas and the heat medium gas;
When the object to be processed is delivered, the object to be processed is levitated from the mounting surface by injecting the levitation gas from the gas injection hole to the back surface of the object to be processed with a predetermined pressure. In a state, the vacuum processing apparatus is configured to deliver an object to be processed to or from a vacuum transfer device provided outside the processing container. The said gas injection hole is used as a heat-medium ejection hole which conveys the temperature of the said mounting stand to the to-be-processed object mounted in the said mounting surface at the time of the process of the said to-be-processed object. The vacuum processing apparatus as described. A vacuum processing apparatus for performing a predetermined process on a workpiece in a vacuum state;
A vacuum transfer device that is disposed adjacent to the vacuum processing device and transfers an object to be processed under vacuum conditions;
A vacuum processing system comprising:
The vacuum processing apparatus includes:
A processing container having an opening for carrying in and out a workpiece;
A mounting table for supporting an object to be processed inside the processing container;
With
The table above is
A mounting table main body having a mounting surface for mounting the object to be processed;
A plurality of gas injection holes formed in the mounting surface;
A gas flow path formed in the interior of the mounting table main body in communication with the gas injection hole;
A gas supply source connected to the gas flow path and configured to be able to switch between the levitation gas and the heat medium gas;
When the object to be processed is delivered, the object to be processed is levitated from the placement surface by injecting the levitation gas from the gas injection hole toward the back surface of the object to be processed with a predetermined pressure. In such a state, the workpiece is transferred to and from the vacuum transfer device,
The vacuum transfer device is
A transport container having a transport opening for transporting a workpiece;
A transfer stage provided in the transfer container;
A pair of guide devices arranged on both sides of the transfer stage to guide the object to be processed in the transfer direction;
A levitation gas supply source for supplying gas to the transfer stage;
With
The transfer stage is
The stage body,
A plurality of floating gas injection holes formed on the upper surface of the stage body;
A floating gas channel communicating with the floating gas injection holes,
The guide apparatus in a state where the object to be processed is levitated from the upper surface of the stage body by injecting the gas for levitating toward the back surface of the object to be processed from the levitation gas injection hole with a predetermined pressure. The object to be processed is guided by, and is carried into the vacuum processing apparatus or unloaded from the vacuum processing apparatus,
A vacuum processing system characterized by The guide device includes:
A holding member that reciprocates along the transfer stage while holding the object to be processed;
The vacuum processing system according to claim 3, wherein the object to be processed is floated and conveyed while the object to be processed is held by the holding member.   The vacuum processing system according to claim 4, wherein the holding member includes a clamp device that clamps the object to be processed.   The vacuum processing system according to claim 4, wherein the holding member includes an electrostatic adsorption device that adsorbs an object to be processed.   The holding member forms a gas flow in which the gas sprayed to the back surface of the object to be processed in a floating state is directed in a direction perpendicular to the traveling direction of the object to be processed and escapes from the left and right sides. The vacuum processing system according to any one of claims 4 to 6, wherein the vacuum processing system is supported.   The said holding member supports a to-be-processed object so that it may become the shape where the cross section of the width direction orthogonal to an advancing direction curved convexly in the state which the to-be-processed object floated. Item 7. The vacuum processing system according to any one of items 6.   The said holding member has a some engaging part, and supports three or more places of one side of a to-be-processed object by the said engaging part, The any one of Claim 4-6 characterized by the above-mentioned. The vacuum processing system according to item.   The vacuum transfer device is provided to face the transfer stage, and includes a gas injection mechanism that corrects distortion of the object to be processed by injecting gas onto the upper surface of the object to be processed. The vacuum processing system according to any one of claims 3 to 9. Heat the plurality of gas injection holes formed in the mounting surface of the vacuum processing apparatus, the when processing of the object is, to tell the temperature of the mounting table in the target object placed on the placement surface The vacuum processing system according to claim 3, wherein the vacuum processing system is used as a medium ejection hole.   The levitation assisting device for injecting gas toward the back surface of the object to be processed in the middle of conveyance is provided between the opening and the mounting table in the processing container. The vacuum processing system of any one of Claims. The levitation assisting device is
A gas injection plate having a plurality of gas injection holes and capable of being vertically moved up and down;
A gas supply source for supplying gas to the gas injection holes;
With
13. The vacuum processing system according to claim 12, wherein when the object to be processed is transported, the gas injection plate is raised to a position close to the object to be processed and gas is injected onto the back surface of the object to be processed. .   The vacuum processing system according to claim 13, wherein the gas injection plate functions as a baffle plate that rectifies the flow of the processing gas in the processing container while the object to be processed is processed.   The vacuum processing system according to any one of claims 3 to 14, wherein the vacuum transfer device is continuously provided around the vacuum processing device. A processing method for processing a workpiece under vacuum conditions,
A processing container having an opening for loading and unloading the object to be processed; a mounting table that supports the object to be processed inside the processing container; and a gas supply source that supplies gas to the mounting table. The mounting table main body having a mounting surface on which the object to be processed is mounted, a plurality of gas injection holes formed on the mounting surface, and the inside of the mounting table main body communicating with the gas injection holes A vacuum processing apparatus comprising: a gas flow path formed on the gas flow path; and a gas supply source connected to the gas flow path and configured to be capable of switching between a levitation gas and a heat medium gas ;
A transport container having a transport opening for transporting the object to be processed, a transport stage provided in the transport container, and a pair of guides disposed in both sides of the transport stage to guide the target object in the transport direction. A levitation gas supply source that supplies gas to the transfer stage, and the transfer stage includes a stage body and a plurality of levitation gas jets formed on the upper surface of the stage body. a hole, a vacuum transfer device, wherein a floating gas injection holes for floating gas passage communicating with, provided with, disposed adjacent to the vacuum processing apparatus,
Using a vacuum processing system with
In the vacuum transfer device, by injecting the levitation gas from the levitation gas injection hole toward the back surface of the object to be processed at a predetermined pressure, the object to be processed is levitated from the upper surface of the stage body. A step of guiding the object to be processed by the guide device and transporting it to the vacuum processing device;
At the time of delivery of the object to be processed, the object to be processed is levitated from the mounting surface by injecting the levitation gas from the gas injection hole toward the back surface of the object to be processed at a predetermined pressure. Passing the object to be processed from the vacuum transfer device to the vacuum processing device;
Performing a predetermined process in a state where the object to be processed is placed on the placement surface;
By injecting the gas from the gas injection hole toward the back surface of the object to be processed at a predetermined pressure, the object to be processed is received by the vacuum transfer device in a state where the object to be processed is levitated from the mounting surface. Passing, and
A processing method characterized by comprising:   The guide device is configured to form a gas flow in which the gas sprayed to the back surface of the object to be processed in a floating state is directed in a direction orthogonal to the traveling direction of the object to be processed and escapes from the left and right sides. The processing method according to claim 16, wherein the body is held and guided.   The guide device holds and guides the object to be processed so that a cross section in a width direction orthogonal to the traveling direction is curved downward and convex in a state where the object to be processed floats. 16. The processing method according to 16. The processing method according to claim 16, wherein the guide device supports one side of the object to be processed at a plurality of locations.

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