JP2009038231A - Substrate supporting mechanism, decompression drying apparatus, and substrate processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent, as much as possible, unwanted thermal influence of a supporting pin on a substrate by reducing thermal influence from ambient temperature on the supporting pin to support the substrate to be processed. <P>SOLUTION: A substrate lifting mechanism 126 includes a lifting pin air-cooling section for cooling the lifting pin 128 to the desired constant temperature. In this lifting pin air-cooling section, an air-cooling gas CA supplied via an air-cooling gas supplying pipe 152 from an air-cooling gas supplying source 150 is introduced from an aperture of the lower end of pin into the lifting pin 128 (pin body 128a). The air-cooling gas CA introduced from the lower side into the lifting pin 128 flows to the upper side of the hollow space within the pin and is exhausted outside the pin form each ventilation hole 128c at the area near the end part of the pin. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate support mechanism that supports a substrate to be processed with a support pin, a reduced-pressure drying apparatus that performs drying under reduced pressure on the substrate using the substrate support mechanism, and a substrate processing apparatus that performs other processing in which the ambient temperature changes.

  For example, in a photolithography process for manufacturing a flat panel display (FPD) such as a liquid crystal display (LCD), a resist solution applied on a substrate to be processed such as a glass substrate is dried under reduced pressure in order to dry it appropriately prior to pre-baking. The device is used.

  A conventional vacuum drying apparatus is configured, for example, as described in Patent Document 1, such that a lower chamber of a tray or a shallow container type having an open upper surface and an upper surface of the lower chamber can be tightly adhered or fitted. And a lid-like upper chamber. A stage is disposed in the lower chamber, and after the substrate is placed horizontally on the stage, the chamber is closed (the upper chamber is brought into close contact with the lower chamber), and a vacuum drying process is performed. When loading / unloading a substrate into / from the chamber, the upper chamber is lifted by a crane or the like to open the chamber, and the stage is appropriately lifted by a cylinder or the like for loading / unloading of the substrate. Then, loading / unloading of the substrate or loading / unloading is performed by handling an external transport robot that transports the substrate around the vacuum drying apparatus.

More specifically, the mechanism for supporting the substrate in the chamber horizontally supports the substrate so as to be placed on the tips of a plurality of support pins that are discretely set and fixed at appropriate positions on the upper surface of the stage. The height position of the stage can be changed via an elevating shaft extending through the bottom wall of the stage. Here, the substrate is supported in the chamber by the support pins while avoiding direct contact with the upper surface of the stage. The substrate that has just been coated with the resist solution by the resist coating process in the previous step is received from the substrate support mechanism side during drying under reduced pressure. This is to minimize the thermal influence, that is, to reduce the contact (area) between the substrate and the substrate supporting member as much as possible, and to effectively work against static electricity.
JP2000-181079

  However, even when the substrate is supported by the support pins, there is some heat exchange between the substrate and the support pins. If the degree of heat exchange is large, the coating film (for example, resist film) on the substrate has a pin. There is a problem of so-called pin transfer that marks are left. Conventionally, in order to prevent pin transfer, the material and shape of the support pin are selected in consideration of thermal characteristics (thermal conductivity, thermal deformation temperature, thermal expansion coefficient, heat resistance temperature, specific heat, flame resistance, etc.) I have taken the measures. However, it has been found that such a material / shape-dependent support pin structure cannot cope with an application in which the ambient temperature changes.

  For example, in a vacuum drying apparatus such as that described above, during vacuum drying (vacuum evacuation), the atmospheric temperature in the chamber drops rapidly from the initial temperature (usually normal temperature) by a decrease of 5 ° C. to 10 ° C., and vacuum drying ( When the vacuum evacuation is stopped and the inside of the chamber is purged with nitrogen gas or the like, the ambient temperature rapidly rises to a temperature exceeding 10 ° C. from the initial temperature, that is, with an increase of several tens of degrees Celsius. Gradually decreases. The temperature of the support pin also changes in accordance with such a change in ambient temperature. Here, the problem is that when the processed substrate is unloaded from the chamber and the subsequent substrate is loaded into the chamber, the substrate temperature is normal, but the temperature of the support pins is It has not returned to room temperature. For this reason, heat exchange due to a temperature difference of, for example, about 10 ° C. occurs between the substrate and the support pins, and pin marks are easily transferred to the resist film.

  The present invention has been made in view of the problems of the prior art as described above, and reduces the influence of the ambient temperature on the support pin, and in particular, enables quick return of the support pin temperature to the initial or reference temperature. Furthermore, an object of the present invention is to provide a substrate support mechanism that can easily and efficiently maintain the support pins at a desired constant temperature.

  Another object of the present invention is to provide a reduced-pressure drying apparatus and a substrate processing apparatus that improve the processing quality by preventing the substrate to be processed from being undesirably affected by the support pins.

  In order to achieve the above object, a substrate support mechanism according to the present invention is a substrate support mechanism that supports a substrate to be processed by placing it on the tip of a support pin, the tip of the support pin is closed, and the side wall is supported on a side wall. A gas supply unit is formed at a base end portion of the cylindrical body so that a predetermined gas for adjusting temperature flows through the ventilation hole in the cylindrical body, and the hollow cylindrical body is provided with a ventilation hole. Alternatively, a vacuum source is connected.

  In the above configuration, the temperature of the support pin is controlled to a desired temperature by flowing a temperature adjusting gas inside the support pin that supports the substrate, thereby reducing the influence of the support pin from the ambient or ambient temperature. As a result, the thermal influence that the substrate receives from the support pins can be reduced.

  In the substrate support mechanism of the present invention, in order to increase the pin temperature adjustment efficiency, a vent hole is preferably provided in a portion near the tip of the support pin, and more preferably, a plurality of portions are provided in different portions in the axial direction of the support pin. Ventilation holes are provided, and a plurality of ventilation holes are provided at different portions in the circumferential direction of the support pins.

  As a preferred embodiment, the pin tip portion that is attached to the tip end portion of the cylindrical body of the support pin and directly contacts the substrate may be made of resin.

  As another preferred embodiment, the tube has a cylindrical cover body that covers the outer peripheral surface of the cylinder body with a gap therebetween, closing the pin tip side of the vent hole, and is provided on the base end side of the cover body. Further, a configuration is adopted in which the temperature adjusting gas is allowed to flow through the gap inside the cover body between the opening communicating with the outside air and the ventilation hole of the cylindrical body. According to such a configuration, the temperature adjusting gas flows along both the inner and outer sides along the wall of the support pin (cylindrical body), so that the pin temperature adjustment efficiency can be further improved and the temperature generated around the support pin. The influence which a board | substrate receives with the flow of conditioning gas can be prevented more reliably.

  As another preferred embodiment, the substrate support mechanism of the present invention has a pin support member in which a plurality of support pins are arranged at a predetermined interval in a horizontal plane and each support pin is supported substantially vertically. . In this case, in this pin support member, it is possible to form a gas flow path that connects to the base end portion of the cylinder and communicates with the gas supply unit or the vacuum source. Moreover, you may have a raising / lowering part which moves a pin support member in a perpendicular direction in order to raise / lower a support pin.

  The reduced-pressure drying apparatus of the present invention supports a sealable chamber in which a substrate to be processed immediately after a coating film is formed on the substrate is detachably accommodated, and the substrate is placed on the tip of the support pin in the chamber. A substrate support mechanism of the present invention, and a vacuum exhaust mechanism for evacuating the chamber in order to dry the coating film on the substrate in a reduced pressure state.

  In the above apparatus configuration, the substrate support mechanism controls the temperature of the support pins to a desired temperature during the vacuum drying process and / or between the processes, so that the substrate is undesirably influenced by the support pins. In this way, it is possible to prevent pin transfer in which the marks of the support pins are attached to the coating film on the substrate, and to improve the characteristics of the coating film.

  In the reduced-pressure drying apparatus of the present invention, as a preferred embodiment, the gas of the substrate support mechanism is arranged so that the temperature adjusting gas flows through the support pins during the period when the vacuum exhaust operation of the vacuum exhaust mechanism is stopped. Supply or vacuum source is activated. In addition, a purge gas supply unit is provided, and purge gas is supplied into the chamber immediately after the evacuation operation of the evacuation mechanism is stopped. In addition, the gas supply or vacuum source is located outside the chamber, and the gas supply or vacuum source is connected to the base end of the cylinder of the support pin through a vacuum-sealed air passage through the chamber wall. Is done.

  According to another preferred embodiment, the single-wafer processing of drying under reduced pressure is repeatedly performed in a constant cycle, and the temperature of the pin tip portion of the support pin is constant reference temperature (for example, immediately before each processing is started) Control is performed so as to return to near the initial temperature of the substrate newly carried into the chamber.

  The substrate processing apparatus of the present invention includes a chamber that accommodates a substrate to be processed in a removable manner, a substrate support mechanism of the present invention that supports the substrate mounted on a tip of the support pin in the chamber, and the chamber in the chamber. And a processing unit that performs a predetermined process for changing the ambient temperature on the substrate.

  In the above apparatus configuration, the substrate support mechanism controls the temperature of the support pins to a desired temperature while performing a predetermined process on the substrate or between the processes, so that the substrate is undesired from the support pins. Processing quality can be improved without being affected by heat.

  According to the substrate support mechanism of the present invention, due to the configuration and operation as described above, the influence of the support pin from the ambient or ambient temperature is reduced, and the support pin temperature can be quickly returned to the initial or reference temperature. Alternatively, temperature control that maintains a desired constant temperature can also be made possible.

  According to the reduced pressure drying apparatus and the substrate processing apparatus of the present invention, the processing and quality can be improved by preventing the substrate to be processed from being undesirably affected by the support pins by the above-described configuration and operation. it can.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

  FIG. 1 shows a coating and developing treatment system as one configuration example to which the reduced pressure drying apparatus of the present invention can be applied. This coating and developing processing system 10 is installed in a clean room, for example, using a glass substrate as a substrate to be processed, and performing a series of processing such as cleaning, resist coating, pre-baking, developing and post-baking in the photolithography process in the LCD manufacturing process. Is what you do. The exposure process is performed by an external exposure apparatus 12 installed adjacent to this system.

  In the coating and developing system 10, a horizontally long process station (P / S) 16 is disposed at the center, and a cassette station (C / S) 14 and an interface station (I / F) are disposed at both ends in the longitudinal direction (X direction). ) 18.

  The cassette station (C / S) 14 is a cassette loading / unloading port of the system 10, and arranges up to four cassettes C that can accommodate a plurality of substrates C in a horizontal direction (Y direction) by stacking substrates G in multiple stages. A cassette stage 20 that can be placed, and a transport mechanism 22 that takes in and out the substrate G to and from the cassette C on the stage 20 are provided. The transport mechanism 22 has a transport arm 22a that can hold the substrate G in units of one sheet, can be operated with four axes of X, Y, Z, and θ, and is adjacent to the adjacent process station (P / S) 16 side and the substrate. G can be delivered.

  In the process station (P / S) 16, the processing units are arranged in the order of the process flow or the process on a pair of parallel and opposite lines A and B extending in the horizontal system longitudinal direction (X direction).

  More specifically, the upstream process line A from the cassette station (C / S) 14 side to the interface station (I / F) 18 side includes a carry-in unit (IN PASS) 24, a cleaning process unit 26, a first The thermal processing section 28, the coating process section 30, and the second thermal processing section 32 are arranged in a line in this order from the upstream side along the first flat flow path 34.

  More specifically, the carry-in unit (IN PASS) 24 receives the unprocessed substrate G from the transfer mechanism 22 of the cassette station (C / S) 14 and inputs it into the first flat flow transfer path 34 at a predetermined tact. It is configured. The cleaning process unit 26 includes an excimer UV irradiation unit (E-UV) 36 and a scrubber cleaning unit (SCR) 38 in order from the upstream side along the first flat flow path 34. The first thermal processing unit 28 includes an adhesion unit (AD) 40 and a cooling unit (COL) 42 in order from the upstream side. The coating process unit 30 is provided with a resist coating unit (COT) 44 and a vacuum drying unit (VD) 46 in order from the upstream side. The second thermal processing unit 32 includes a pre-bake unit (PRE-BAKE) 48 and a cooling unit (COL) 50 in order from the upstream side. A pass unit (PASS) 52 is provided at the end point of the first flat flow conveyance path 34 located adjacent to the downstream side of the second thermal processing unit 32. The substrate G that has been transported in a flat flow on the first flat flow transport path 34 is transferred from the pass unit (PASS) 52 at the end point to the interface station (I / F) 18.

  On the other hand, in the downstream process line B from the interface station (I / F) 18 side to the cassette station (C / S) 14 side, a development unit (DEV) 54, a post-bake unit (POST-BAKE) 56, a cooling unit are provided. A unit (COL) 58, an inspection unit (AP) 60 and a carry-out unit (OUT-PASS) 62 are arranged in a line in this order from the upstream side along the second flat flow path 64. Here, the post-bake unit (POST-BAKE) 56 and the cooling unit (COL) 58 constitute a third thermal processing unit 66. The carry-out unit (OUT PASS) 62 is configured to receive the processed substrates G one by one from the second flat flow transfer path 64 and pass them to the transfer mechanism 22 of the cassette station (C / S) 14. .

  An auxiliary transfer space 68 is provided between the process lines A and B, and a shuttle 70 capable of placing the substrate G horizontally in units of one sheet is both in the process line direction (X direction) by a drive mechanism (not shown). You can move in the direction.

  The interface station (I / F) 18 includes a transfer device 72 for exchanging the substrate G with the first and second flat flow transfer paths 34 and 64 and the adjacent exposure device 12. A rotary stage (R / S) 74 and a peripheral device 76 are arranged around the periphery. The rotary stage (R / S) 74 is a stage that rotates the substrate G in a horizontal plane, and is used to change the orientation of the rectangular substrate G when it is transferred to the exposure apparatus 12. The peripheral device 76 connects, for example, a titler (TITLER), a peripheral exposure device (EE), and the like to the second flat flow path 64.

  FIG. 2 shows a processing procedure of all steps for one substrate G in this coating and developing processing system. First, in the cassette station (C / S) 14, the transport mechanism 22 takes out one substrate G from any one of the cassettes C on the stage 20, and removes the taken substrate G in the process station (P / S) 16. It is carried into the carry-in unit (IN PASS) 24 on the process line A side (step S1). The substrate G is transferred or loaded onto the first flat flow path 34 from the carry-in unit (IN PASS) 24.

  The substrate G put into the first flat transport path 34 is first subjected to an ultraviolet cleaning process and a scrubbing cleaning process by the excimer UV irradiation unit (E-UV) 36 and the scrubber cleaning unit (SCR) 38 in the cleaning process unit 26. Sequentially applied (steps S2, S3). The scrubber cleaning unit (SCR) 38 removes particulate dirt from the substrate surface by performing brushing cleaning and blow cleaning on the substrate G that moves horizontally on the flat flow path 34, and then rinses. Finally, the substrate G is dried using an air knife or the like. When a series of cleaning processes in the scrubber cleaning unit (SCR) 38 is completed, the substrate G passes through the first thermal processing section 28 as it is down the first flat flow path 34.

  In the first thermal processing unit 28, the substrate G is first subjected to an adhesion process using vapor HMDS in the adhesion unit (AD) 40, and the surface to be processed is hydrophobized (step S4). After the completion of this adhesion process, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 42 (step S5). Thereafter, the substrate G is carried into the coating process unit 30 along the first flat flow path 34.

  In the coating process section 30, the substrate G is first coated with a resist solution on the upper surface (surface to be processed) by a spinless method using a slit nozzle while being flown flat in a resist coating unit (COT) 44, and immediately after that, adjacent to the downstream side. A vacuum drying unit (VD) 46 receives a drying process at room temperature by a reduced pressure (step S6).

  The substrate G that has left the coating process unit 30 passes through the second thermal processing unit 32 through the first flat flow path 34. In the second thermal processing section 32, the substrate G is first pre-baked by the pre-bake unit (PRE-BAKE) 48 as a heat treatment after resist coating or a heat treatment before exposure (step S7). By this pre-baking, the solvent remaining in the resist film on the substrate G is evaporated and removed, and the adhesion of the resist film to the substrate is enhanced. Next, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 50 (step S8). Thereafter, the substrate G is taken from the pass unit (PASS) at the end point of the first flat flow transfer path 34 to the transfer device 72 of the interface station (I / F) 18.

  In the interface station (I / F) 18, the substrate G is subjected to, for example, a 90-degree direction change by the rotary stage 74 and then carried into the peripheral exposure device (EE) of the peripheral device 76, where it adheres to the peripheral portion of the substrate G. After receiving the exposure for removing the resist to be developed at the time of development, the resist is sent to the adjacent exposure apparatus 12 (step S9).

  In the exposure apparatus 12, a predetermined circuit pattern is exposed to the resist on the substrate G. Then, when the substrate G that has undergone pattern exposure is returned from the exposure apparatus 12 to the interface station (I / F) 18 (step S9), it is first carried into a titler (TITLER) of the peripheral device 76, where there is a predetermined on the substrate. Predetermined information is written in the part (step S10). Thereafter, the substrate G is carried from the transfer device 72 to the starting point of the development unit (DEV) 54 of the second flat flow transfer path 64 laid on the process line B side of the process station (P / S) 16. .

  In this way, the substrate G is transferred on the second flat flow transfer path 64 toward the downstream side of the process line B. In the first development unit (DEV) 54, the substrate G is subjected to a series of development processes of development, rinsing, and drying while being conveyed in a flat flow (step S11).

  The substrate G that has undergone a series of development processes in the development unit (DEV) 54 is sequentially passed through the third thermal processing unit 66 and the inspection unit (AP) 60 while being put on the second flat flow path 64 as it is. To do. In the third thermal processing section 66, the substrate G is first subjected to post-baking as post-development heat treatment in the post-bake unit (POST-BAKE) 56 (step S12). By this post-baking, the developing solution and the cleaning solution remaining in the resist film on the substrate G are removed by evaporation, and the adhesion of the resist pattern to the substrate is enhanced. Next, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 58 (step S13). In the inspection unit (AP) 60, non-contact line width inspection, film quality / film thickness inspection, and the like are performed on the resist pattern on the substrate G (step S14).

  The carry-out unit (OUT PASS) 62 receives the substrate G that has been processed in all steps from the second flat-carrying conveyance path 64 and transfers it to the conveyance mechanism 22 of the cassette station (C / S) 14. On the cassette station (C / S) 14 side, the transfer mechanism 22 stores the processed substrate G received from the carry-out unit (OUT PASS) 62 in any one (usually the original) cassette C (step S1). ).

  In this coating and developing treatment system 10, the present invention can be applied to a vacuum drying unit (VD) 46 in the coating process unit 30. Hereinafter, the configuration and operation of the vacuum drying unit (VD) 46 in the coating process section 30 in a preferred embodiment of the present invention will be described in detail with reference to FIGS.

  FIG. 3 is a plan view showing the overall configuration of the coating process unit 30 in this embodiment. 4 to 6 show a configuration of a vacuum drying unit (VD) 46 according to one embodiment, FIG. 4 is a plan view thereof, and FIGS. 5 and 6 are sectional views thereof.

  In FIG. 3, the resist coating unit (COT) 44 floats in the air on the floating stage 80 that constitutes a part or one section of the first flat flow path 34 (FIG. 1). A substrate transport mechanism 82 for transporting the substrate G in the longitudinal direction of the stage (X direction), a resist nozzle 84 for supplying a resist solution to the upper surface of the substrate G transported on the stage 80, and a resist nozzle 84 between the coating processes. And a nozzle refresh unit 86 for refreshing.

  A large number of gas injection ports 88 for injecting a predetermined gas (for example, air) upward are provided on the upper surface of the stage 80, and the substrate G is moved from the upper surface of the stage by the pressure of the gas injected from the gas injection ports 88. It is configured to rise to a certain height.

  The substrate transport mechanism 82 includes a pair of guide rails 90A and 90B extending in the X direction across the stage 80, a slider 92 that can reciprocate along the guide rails 90A and 90B, and both sides of the substrate G on the stage 80. And a substrate holding member (not shown) such as a suction pad provided on the slider 92 so as to detachably hold the end, and the slider 92 is moved in the transport direction (X) by a linear movement mechanism (not shown). The substrate G is floated and conveyed on the stage 80 by being moved in the direction).

  The resist nozzle 84 is a long nozzle that extends above the stage 80 in a horizontal direction (Y direction) perpendicular to the transport direction (X direction), and passes through the substrate G that passes directly under the predetermined application position. The resist solution is discharged in a strip shape from the slit-shaped discharge port with respect to the upper surface. Further, the resist nozzle 84 is configured to be movable in the X direction integrally with the nozzle support member 94 that supports the nozzle, and is movable up and down in the Z direction, and moves between the application position and the nozzle refreshing portion 86. It can be done.

  The nozzle refresh unit 86 is held by the support member 96 at a predetermined position above the stage 80, and as a preparation for the coating process, a priming processing unit 98 for causing the resist nozzle 84 to discharge a resist solution, and a resist nozzle A nozzle bath 100 for keeping the resist discharge port 84 in a solvent vapor atmosphere for the purpose of preventing drying and a nozzle cleaning mechanism 102 for removing the resist adhering to the vicinity of the resist discharge port of the resist nozzle 84 are provided. .

  Here, main actions in the resist coating unit (COT) 44 will be described. First, the substrate G sent by, for example, roller conveyance from the first thermal processing unit 28 (FIG. 1) in the previous stage is carried into a carry-in unit set on the front end side on the stage 80, and is in a standby state there. 92 holds and receives the substrate G. On the stage 80, the substrate G receives the pressure of the gas (air) injected from the gas injection port 88 and keeps the floating state in a substantially horizontal posture.

  The slider 92 moves in the transport direction (X direction) toward the reduced-pressure drying unit (VD) 46 while holding the substrate, and when the substrate G passes under the resist nozzle 84, the resist nozzle 84 is moved to the substrate. By discharging the resist solution in a strip shape toward the upper surface of G, a liquid film of the resist solution is formed on one surface so that a carpet is laid on the substrate G from the front end to the rear end of the substrate. The substrate G thus coated with the resist solution is then levitated and conveyed on the stage 80 by the slider 92, passes over the rear end of the stage 80, and transfers to the roller conveyance path 104 described later, where the holding by the slider 92 is released. . The substrate G transferred to the roller transport path 104 is then transported on the roller transport path 104 by roller transport, as will be described later, and is carried into the subsequent vacuum drying unit (VD) 46.

  After the coated substrate G is sent to the reduced pressure drying unit (VD) 46 side as described above, the slider 92 returns to the carry-in portion on the front end side of the stage 80 in order to receive the next substrate G. The resist nozzle 84 moves from the coating position (resist liquid discharge position) to the nozzle refresh unit 86 after completing one or a plurality of coating processes, and performs refreshing or preparatory processing such as nozzle cleaning and priming. Then return to the application position.

  As shown in FIG. 3, on the extension (downstream side) of the stage 80 of the resist coating unit (COT) 44, a roller transport that constitutes a part or one section of the first flat flow transport path 34 (FIG. 1). A path 104 (104a, 104b, 104c) is laid. The roller conveyance path 104 is continuously laid inside and outside (front and rear) of the chamber 106 of the vacuum drying unit (VD) 46.

  More specifically, the roller conveyance path 104 around the reduced-pressure drying unit (VD) 46 is laid in the chamber 106 and a loading-side roller conveyance path 104a that is laid on the conveyance upstream side of the chamber 106, that is, on the loading side. The inner roller conveyance path 104b and the unloading side roller conveyance path 104c laid on the conveyance downstream side of the chamber 106, that is, the unloading side.

  The roller conveyance paths 104a, 104b, and 104c of each part are rotated by rotating a plurality of rollers 108a, 108b, and 108c arranged at appropriate intervals in the conveyance direction (X direction) by respective independent or common conveyance driving units. G is sent in the conveyance direction (X direction) by roller conveyance. Here, the carry-in side roller conveyance path 104 a receives the substrate G carried out from the stage 80 of the resist coating unit (COT) 44 as an extension of the floating conveyance, and rolls it into the chamber 106 of the vacuum drying unit (VD) 46. It functions to send in. The internal roller transport path 104b draws the substrate G sent by the roller transport from the carry-in side roller transport path 104a into the chamber 106 by roller transport at the same speed, and the substrate G that has been subjected to the vacuum drying process in the chamber 106. It functions so as to send it out of the chamber 106 (back stage) by roller conveyance. The carry-out side roller conveyance path 104c pulls out the processed substrate G sent out from the internal roller conveyance path 104b in the chamber 106 by roller conveyance at the same speed as the conveyance speed of the internal roller conveyance path 104b, and a subsequent processing unit. It functions to send to (second thermal processing unit 32).

  As shown in FIGS. 3 to 6, the chamber 106 of the vacuum drying unit (VD) 46 is formed in a relatively flat rectangular parallelepiped, and has a space in which the substrate G can be accommodated horizontally. A pair of (upstream and downstream) chamber sidewalls facing each other in the transport direction (X direction) of the chamber 106 is formed with a slit-shaped transport inlet 110 and a transport outlet formed so as to allow the substrate G to pass through in a flat flow. 112 are provided. Further, gate mechanisms 114 and 116 for opening and closing the carry-in port 110 and the carry-out port 112 are attached to the outer wall of the chamber 106. The upper surface portion or upper lid 118 of the chamber 106 is removable for maintenance.

  Although not shown, each gate mechanism 114, 116 has a lid (valve body) capable of airtightly closing the slit-shaped loading / unloading port (110, 112), and the lid body horizontally with the loading / unloading port (110, 112). A first cylinder that moves up and down between an opposed vertical forward movement position and a lower vertical backward movement position, and a horizontal forward movement position in which the lid is tightly adhered to the loading / unloading port (110, 112). And a second cylinder that moves horizontally between the horizontal return positions to be separated.

  In the chamber 106, the rollers 108b constituting the inner roller conveyance path 104b are arranged in a row at an appropriate distance in the conveyance direction (X direction) at a height position corresponding to the carry-in / out port (110, 112). A part or all of the rollers 108b are connected to a rotational drive source 120 such as a motor provided outside the chamber 106 through an appropriate transmission mechanism. Each roller 108b is configured as a rod that contacts the back surface of the substrate G with a cylindrical portion or a column portion having a uniform outer diameter, and both end portions thereof are bearings provided on the left and right side walls of the chamber 106 or in the vicinity thereof. (Not shown) is rotatably supported. A side wall portion of the chamber 106 through which the rotation shaft 122 of the transmission mechanism passes is sealed with a seal member 124.

  Although not shown, the roller 108a constituting the carry-in side roller conveyance path 104a is also rotatably supported by bearings fixed to a frame or the like, and is common to the rotation drive source 120 for the inner roller conveyance path 104b. Or it is rotationally driven by a separate rotational drive source. The same applies to 108c constituting the carry-out side roller conveyance path 104c.

  The vacuum drying unit (VD) 46 includes a substrate lift mechanism (substrate support mechanism) 126 for supporting the substrate G in the chamber 106 substantially horizontally and raising and lowering it. The substrate lift mechanism 126 includes a large number (preferably 50 or more) of lift pins 128 discretely arranged in a predetermined arrangement pattern (for example, in a matrix) in the chamber 106, and a predetermined set of these lift pins 128. Alternatively, a plurality of horizontal bar or horizontal plate pin bases 130 supported at positions lower than the transport surface of the inner roller transport path 104b for each group, and the outside (lower) of the chamber 106 for moving each pin base 130 up and down For example, a cylinder 132.

  More specifically, a plurality of (preferably seven or more) lift pins 128 are vertically arranged in a row in a gap between two adjacent rollers 108b, 108b in parallel with the roller 108b (in the Y direction) at regular intervals. A plurality of (preferably 8 or more) lift pin rows are provided at appropriate intervals in the conveying direction (X direction), and one or a plurality of pairs (two in the illustrated example) are provided on each pin base 130. Support the lift pin row. The pin base 130 inside the chamber is connected to the corresponding cylinder 132 outside the chamber by a lifting shaft 136 that penetrates the bottom wall of the chamber 106 through a seal member 134 and is movable up and down. .

  In the substrate lift mechanism 126 configured as described above, all the cylinders 132 are all driven forward (upward) or backward (downward) at the same timing at the same time, so that all the cylinders 132 can be moved through the lifting shaft 136 and the pin base 130. The lift pin 128 is aligned with the height of the tip of the pin, and as shown in FIG. 5, the tip of the pin is lowered (lowered) below the conveying surface of the roller conveying path 104b, and the tip of the pin is in contact with the roller as shown in FIG. It can be moved up and down between the forward (upward) position that is higher than the transport surface of the transport path 104b.

  An exhaust port 138 is formed at one or a plurality of locations on the bottom wall of the chamber 106. A vacuum exhaust device 142 is connected to these exhaust ports 138 through an exhaust pipe 140. Each vacuum evacuation device 142 has a vacuum pump for evacuating the chamber 106 from the atmospheric pressure state to maintain a reduced pressure state of a predetermined pressure or a degree of vacuum. In addition, in order to average the dispersion | variation in the exhaust capability of these several vacuum exhaust apparatuses 142, you may connect each exhaust pipe 140 with a connection pipe (not shown). Further, an open / close valve (not shown) may be provided in the middle of the exhaust pipe 140.

  Cylindrical nitrogen gas ejection portions 144 extending in the Y direction are provided at both ends in the chamber 106, that is, near the carry-in port 110 and the carry-out port 112 and lower than the roller conveyance path 104b. These nitrogen gas ejection portions 144 are made of, for example, a porous hollow tube formed by sintering metal powder, and are connected to a nitrogen gas supply source (not shown) via a pipe 146 (FIG. 4). . When returning from the reduced pressure state to the atmospheric pressure state with the chamber 106 sealed after completion of the reduced pressure drying process, these nitrogen gas ejection portions 144 eject the purge nitrogen gas from the entire peripheral surface of the tube.

  Each lift pin 128 has a pin main body 128a having a base end portion, that is, a lower end portion fixed to the pin base 130, and a pin tip portion 128b protruding vertically upward from the upper end of the pin main body 128a (FIG. 5). The pin main body 128a is configured by a hollow cylinder or tube made of a rigid body such as stainless steel (SUS). The pin tip portion 128b is preferably formed of a cylindrical rod body made of a resin such as PEEK or cerazole (trade name), and is fixed by caulking to the upper end portion of the pin body 128a.

  In this embodiment, the substrate lift mechanism 126 has a temperature adjustment function for air-cooling the lift pins 128 to a desired constant temperature. For this temperature adjustment function, an air-cooling gas supply source 150 is installed outside the chamber 106. The output port of the air cooling gas supply source 150 is connected to each lift pin 128 via a pipe, that is, an air cooling gas supply pipe 152. An on-off valve 154 may be provided in the middle of the pipe 152.

  FIG. 7 shows a specific configuration example of the lift pin air cooling unit in the substrate lift mechanism 126. A through hole is provided at a pin mounting position of the pin base 130. More specifically, a screw hole (female screw) 156 is formed in the upper portion of the through hole, and an air cooling gas inlet 158 is formed in the lower portion. When the cylindrical screw part (male screw) 160 fixed to the lower end part of the lift pin 128 is fitted into the screw hole 156, the lift pin 128 is detachably attached to the pin base 130. Further, in this pin mounting structure, the lower surface of the cylindrical block (saddle) 162 fixed to the lift pin 128 abuts on the upper surface of the pin base 130, so that the lift pin 128 is aligned with the height of the pin tip vertically. It is designed to be fixed in posture. For example, an air cooling gas supply pipe 152 is connected to the air cooling gas inlet 158 via a T-shaped joint 164.

  In the lift pin 128, the interior of the pin main body 128a is hollow, the lower end is opened, and the tapered upper end is closed by the pin tip 128b. The side wall of the pin main body 128a is provided with one or a plurality of vent holes 128c, preferably at a portion close to the tip of the pin. In the illustrated configuration example, a plurality of, for example, two vent holes 128c are provided in the axial direction of the lift pin 128, for example, and a plurality of, for example, four (for example, eight) vent holes 128c are provided in the circumferential direction.

  An air cooling gas CA such as air or nitrogen gas sent from the air cooling gas supply source 150 (FIGS. 5 and 6) through the air cooling gas supply pipe 152 passes through the air cooling gas inlet 158 from the T-shaped joint 164. It is introduced into the lift pin 128 (pin body 128a) from the opening at the lower end of the pin. The air-cooled gas CA introduced from below into the lift pin 128 flows upward through the hollow space 165 inside the pin, and flows out of the pin from each vent hole 128c near the tip of the pin. Thus, the air cooling gas CA passes through the hollow space 165 in the lift pin 128 from the bottom to the top, so that the lift pin 128 is air-cooled (temperature-controlled) to a predetermined temperature using the air-cooling gas CA as a refrigerant (medium). Yes.

  In this embodiment, the structure of the lift pin 128 itself and the air cooling gas supply source 150, the air cooling gas supply pipe 152, and the on-off valve 154 are combined to constitute the lift pin air cooling unit. In the lift pin air cooling section, the temperature and flow rate of the air cooling gas CA are the main temperature control conditions. The temperature of the air cooling gas CA mainly defines the saturation value of the pin air cooling temperature. The flow rate of the air cooling gas CA mainly determines the pin air cooling rate, and the air cooling rate increases as the flow rate increases. When increasing the flow rate of the air-cooled gas CA, it is desirable to increase the conductance by increasing the number of vent holes 128c or increasing the total opening area.

  Next, the operation of the vacuum drying unit (VD) 46 in this embodiment will be described with reference to FIGS. FIG. 8 shows an example of the temperature change of the lift pin 128 when the single-wafer processing for vacuum drying is repeated at a predetermined cycle or tact τ in the vacuum drying unit (VD) 46.

  As described above, the substrate G to which the resist solution is applied by the resist application unit (COT) 44 adjacent to the upstream side moves from the floating conveyance path on the stage 80 to the carry-in side roller conveyance path 104a in a flat flow. Thereafter, as shown in FIG. 5, the substrate G moves on the carry-in side roller conveyance path 104 a by roller conveyance, and eventually enters the chamber 106 of the reduced pressure drying unit (VD) 46 from its carry-in port 110. At this time, the gate mechanism 114 keeps the carry-in entrance 110 open.

  The inner roller conveyance path 104b also performs a roller conveyance operation at the same conveyance speed as the roller conveyance operation of the carry-in side roller conveyance path 104a by the rotational drive of the rotation drive source 120. As shown in FIG. The substrate G entering from 110 is drawn into the interior of the chamber 106 by roller conveyance. At this time, the substrate lift mechanism 126 waits for all the lift pins 128 at the backward movement (downward) position where the tip ends of the pins are lower than the conveyance surface of the internal roller conveyance path 104b. When the substrate G arrives at a predetermined position substantially in the center of the chamber 106, the roller transfer operation of the internal roller transfer path 104b stops there. At the same time or just before this, the roller conveyance operation of the carry-in side roller conveyance path 104a may be stopped.

  As described above, as shown in FIG. 5, when the substrate G to be subjected to the vacuum drying process is carried into the chamber 106 from the resist coating unit (COT) 44 on the upstream side or upstream side as described above, simultaneously or immediately before this. The preceding substrate G that has just undergone the vacuum drying process in the chamber 106 goes out of the chamber 106 from the carry-out port 112 by the continuous constant-speed roller conveyance on the inner roller conveyance path 104b and the carry-out side roller conveyance path 104c. It is sent to the second thermal processing section 32 (FIG. 1) adjacent to the downstream or downstream side in a flat flow.

  As described above, the substrate G, on which the resist solution has been applied by the resist coating unit (COT) 44, is continuously transported on the carry-in side roller transport path 104a and the inner roller transport path 104b by a reduced pressure drying unit (VD). ) It is carried into the chamber 106 of 46. Immediately after this, the gate mechanisms 114 and 116 are operated to close the carry-in port 110 and the carry-out port 112 that have been opened so far, thereby sealing the chamber 106. The substrate G is carried into the chamber 106 at room temperature (for example, about 25 ° C.).

  Next, the substrate lift mechanism 126 moves the elevating cylinder 132 forward so that all the pin bases 130 are moved to a predetermined height position in the chamber 106 where the tip ends of all the lift pins 128 exceed the transfer surface of the internal roller transfer path 104b. Raise it by a predetermined stroke all at once. As shown in FIG. 6, the substrate G is transferred from the inner roller transport path 104b to the pin tip of the lift pin 128 by the forward movement (upward) operation of the substrate lift mechanism 126, and the inner roller transport path 104b is moved as it is. Lifted up.

Next, at a predetermined timing (time point t _{a in} FIG. 8), the vacuum exhaust device 142 is operated to start the vacuum exhaust in the chamber 106. By this evacuation, the pressure in the chamber 106 becomes a reduced pressure state, and the solvent (thinner) evaporates from the resist liquid film on the substrate G under this reduced pressure state, and the temperature of the substrate G and the ambient temperature are caused by this heat of vaporization. As shown in FIG. 8, the temperature of the lift pin 128 also decreases monotonously from the initial temperature of room temperature (about 25 ° C.), for example.

  While the evacuation device 142 is performing the evacuation operation, the on-off valve 154 is closed in the lift pin air cooling section of the substrate lift mechanism 126, and the air cooling with respect to the lift pin 128 is suspended.

When the vacuum evacuation device 142 stops the vacuum evacuation operation and finishes the vacuum drying process at a time point t _b in FIG. 8 after a predetermined time has elapsed since the start of the vacuum drying, the temperature of the lift pin 128 at this time is the minimum value T. _L (for example, 12 ° C. to 8 ° C.) is reached. In place of this, both gate mechanisms 114 and 116 on the side wall of the chamber 106 are opened, and the nitrogen gas ejection part 144 diffuses and discharges the purge nitrogen gas at a predetermined flow rate in the chamber 106. Due to this purging, the ambient temperature in the chamber 106 increases rapidly.

  On the other hand, the lift pin air cooling unit of the substrate lift mechanism 126 also starts the air cooling operation immediately after the completion of the vacuum drying, the on-off valve 154 opens, and the air cooling gas from the air cooling gas supply source 150 passes through the air cooling gas supply pipe 152 into the chamber 106. The lift pins 128 are supplied at a predetermined flow rate (for example, 15 liters / minute or more). As described above, in each lift pin 128, the air cooling gas CA introduced from the air cooling gas introduction port 158 flows vertically through the hollow space 165 in the pin main body 128a from the bottom to the top, and each air hole near the upper end of the pin. Exit from 128c. Thus, air cooling of the lift pins 128 is started in the substrate lift mechanism 126.

However, during purging, the rate of increase in the ambient temperature in the chamber 106 exceeds the lift pin air cooling rate, so the temperature of the lift pin 128 increases monotonously, and at the end of purging (time t _C ), the temperature of the lift pin 128 becomes the initial temperature. A maximum temperature T _H (eg, 35 ° C. to 40 ° C.) that is much higher than T _S (about 25 ° C.) is reached.

  However, after the operation of the nitrogen gas ejection part 144 is stopped and the purging is finished, the effect of air cooling by the lift pin air cooling part is immediately manifested, the temperature of the lift pin 128 is rapidly lowered, and the air cooling gas CA is rapidly reduced. Saturates (stable) when the temperature reaches the pin air cooling temperature. In this embodiment, since the pin air cooling temperature is set to room temperature (about 25 ° C.), the temperature of the lift pin 128 returns to the room temperature, that is, the vicinity of the initial temperature (about 25 ° C.).

  In parallel with or before and after the purging operation and the lift pin air cooling operation as described above, the substrate G is transferred from the lift pins 128 to the inner roller transport path 104b. More specifically, the substrate lift mechanism 126 moves the elevating cylinder 132 backward so that all the pin bases 130 reach a predetermined height position at which the tip ends of all the lift pins 128 are lower than the transfer surface of the internal roller transfer path 104b. Are simultaneously lowered by a predetermined stroke. By the backward movement (downward movement) of the substrate lift mechanism 126, the substrate G is transferred from the tip of the lift pin 128 to the internal roller transport path 104b in a horizontal posture.

  Immediately after the substrate transfer operation, the roller transfer operation is started on the inner roller transfer path 104b and the unload-side roller transfer path 104c, and the substrate G just subjected to the decompression drying process is transferred from the transfer port 112 by roller transfer. It is carried out and sent as it is to the second thermal processing section 32 (FIG. 1) at the subsequent stage as it is. Simultaneously with the carry-out operation of the processed substrate G, as shown in FIG. 5, the subsequent substrate G from the resist coating unit (COT) 44 is continuously transferred on the carry-in side roller conveyance path 104a and the inner roller conveyance path 104b. It is carried into the chamber 106 from the carry-in port 110 by roller conveyance. This succeeding or new substrate G is also carried in at room temperature, and the single-wafer processing of the same vacuum drying as described above is performed on this substrate G with a constant tact τ.

  In this case, the newly introduced room temperature substrate G contacts the lift pins 128 that have returned to the initial temperature, that is, near room temperature, so there is almost no substantial temperature difference or heat exchange between the substrate G and the lift pins 128. In both cases (G, 128), vacuum drying (evacuation) is started from the room temperature. As a result, it is possible to prevent pin transfer in which the lift pins 128 are left on the resist film on the substrate G.

In this regard, in the conventional vacuum drying apparatus, that is, when the substrate lift mechanism does not include the lift pin air cooling unit of the above embodiment, as shown by the phantom line (dashed line) in FIG. after the degree (rise) is large, the degree of lift pins temperature drop after purging ends (rate) is small, the temperature of the lift pins in the next vacuum drying time (evacuation) is started t _d (t _a) the initial temperature Alternatively, the temperature T _S ′ (for example, 32 ° C. to 36 ° C.) is still considerably higher than room temperature (about 25 ° C.). As a result, the substrate immediately after being loaded is supported (contacted) by the higher-temperature lift pins, and the resist liquid film on the substrate is affected by local heat in the vicinity of the lift pin contact position (locally the solvent). Evaporation of the pin is promoted), and pin marks are easily transferred.

  As described above, in the vacuum drying apparatus of this embodiment, the lift pins 128 that support the substrate G in the chamber 106 throughout the vacuum drying process and throughout the vacuum drying process at a predetermined timing and over a predetermined period. Since cooling (temperature adjustment) is performed at the pin cooling temperature, pin transfer in which the lift pins 128 are marked on the resist film on the substrate G can be effectively prevented.

  In addition, the reduced-pressure drying apparatus of this embodiment has an advantage that the conventional apparatus does not have. That is, the substrate G to be subjected to the vacuum drying process is carried into the chamber 106 by roller conveyance, and the substrate G that has been subjected to the vacuum drying process in the chamber 106 is carried out of the chamber 106 by roller conveyance. When loading / unloading the substrate G into / from the chamber 106, a transfer robot using a transfer arm is not required, and the substrate is bent like a fan, causing errors such as misalignment, collision and breakage during loading / unloading. You don't have to wake up. In addition, since the substrate G is loaded and unloaded through the slit-shaped loading / unloading port 110 and the loading / unloading port 112 provided on the side wall of the chamber 106, the upper lid 118 of the certain chamber 106 is opened / closed (lifted / lowered) by 1 to 2 tons or more. No operation is required, there is no problem of dust generation due to large vibrations, and safety for workers is ensured.

  9 and 10 show a modification of the lift pin air cooling unit in the substrate lift mechanism 126 of this embodiment.

  The lift pin air cooling unit shown in FIG. 9 covers a pin body 128a of a lift pin 128 with a cylindrical cover 170 that hermetically closes the tip end of the pin and opens the lower end of the pin to the outside. More specifically, the cylindrical cover 170 is made of a rigid body such as SUS or aluminum, and the upper end portion of the cover is tapered to be airtightly joined to the upper end portion of the pin body 128a on the radially outer side of the pin tip portion 128b. The portion extends in parallel with the outer periphery of the pin main body 128 a to form a cylindrical gap 172, and the lower end of the cover terminates at a position slightly above the cylindrical block body 162 to form an annular opening 174.

  According to such a configuration, the air cooling gas CA that has flowed through the air cooling gas supply pipe 152 from the air cooling gas supply source 150 (FIGS. 5 and 6) is introduced into the lift pin 128 from the opening at the lower end of the pin, and the inside of the pin The hollow space 165 flows from the bottom to the top and flows out of the pins through the respective vent holes 128c near the tip of the pin. Then, the air-cooled gas CA that has flowed out of the lift pins 128 from the respective vent holes 128c is guided downward in the gap inside the cylindrical cover 170, that is, in the gas flow path 172, and radially from the opening 174 at the lower end of the cover 170. Go to the outside or surrounding space. Thereby, the following specific effects are exhibited.

  One is to improve the pin air cooling effect. That is, the air-cooled gas CA flows along the inner wall of the lift pin 128 (pin body 128a) through the gas flow path 165 inside the pin from the bottom to the top, and when it comes out of each vent hole 128c, the lift pin 128 (pin body 128a). ) Along the outer wall of the pin, the gap around the pin or the gas flow path 172 flows from the top to the bottom, so that the wall of the lift pin 128 (pin body 128a) is double-air cooled on both the inner and outer sides, thereby pin air cooling. The effect can be further enhanced.

  Moreover, the effect which prevents more reliably the thermal influence which it has on the board | substrate G of a lift pin air cooling part is also acquired. That is, by lowering the height position at which the air-cooling gas CA is ejected from the lift pin 128 to the position of the opening 174 at the lower end of the cover 170 rather than the position of the vent hole 128c, the air-cooling gas CA is ejected. The thermal influence on the substrate G can be sufficiently prevented.

  The lift pin air cooling unit of FIG. 10 is characterized in that the lift pin 128 can be air cooled regardless of the pressure in the chamber 106, that is, even when the chamber 106 is in a reduced pressure state. In this configuration example, the lower end of the cover 170 is extended (filled) into the pin base 130, and the cover opening 174 is hermetically connected to the gas flow path (return path) 180 inside the pin base 130. The gas flow path (return path) 180 passes through the pin base 130 and the elevating shaft 136 and communicates with the atmosphere outside the chamber 106. On the other hand, the gas flow path 182 connected to the lower end opening of the lift pin 128 passes through the pin base 130 and the elevating shaft 136 and is connected to the gas supply pipe 152 outside the chamber 106.

  In such a configuration, gas passages (182, 165, 128c, 172, 174, 180) for circulating the air-cooled gas CA into the lift pins 128 in the chamber 106 are sealed (vacuum sealed) over the entire section. Therefore, the air cooling of the lift pin 128 can be performed continuously or intermittently independently of the pressure in the chamber 106. In particular, when the air cooling of the lift pins 128 is performed continuously or continuously, the temperature of the lift pins 128 can be kept constant.

  The preferred embodiments of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the technical idea.

  For example, in the lift pin air cooling section of the substrate lift mechanism 126, the air cooling gas supply source 150 can be replaced with a vacuum source such as a vacuum pump or an ejector. In this case, the air-cooled gas is an ambient gas (for example, air or nitrogen gas) around the lift pin 128, the gas supply pipe 152 is a gas suction pipe, and the direction in which the air-cooled gas flows in the lift pin 128 is opposite to that in the above embodiment. become. That is, the gas around the pin (air-cooled gas) flows into the pin from the vent hole 128c, and the air-cooled gas that has flowed in flows from the top to the bottom in the hollow space 165 inside the pin and passes through the gas suction pipe 152 from the lower end opening. Inhaled into the vacuum source.

  In the above embodiment, the present invention is applied to the roller-conveying vacuum drying unit (VD) 46. However, the present invention can be widely applied to any type of vacuum drying apparatus, and further desired without vacuum. The present invention can also be applied to other substrate processing apparatuses that perform the above processing (for example, heat treatment). Various modifications can be made to the overall structure of the substrate support mechanism or each part. For example, a structure in which the support pin is fixed at a certain position without being raised or lowered, or a structure in which the support pin can move up and down through the bottom wall of the chamber. Etc. are also possible.

  The substrate to be processed in the present invention is not limited to a glass substrate for LCD, and other flat panel display substrates, semiconductor wafers, CD substrates, photomasks, printed substrates and the like are also possible. The coating liquid to be dried under reduced pressure is not limited to a resist liquid, and for example, a processing liquid such as an interlayer insulating material, a dielectric material, or a wiring material is also possible.

It is a top view which shows the structure of the application | coating development processing system which can apply this invention. It is a flowchart which shows the process sequence in the said application | coating development processing system. It is a top view which shows the whole structure of the application | coating process part in embodiment. It is a top view which shows the structure of the reduced pressure drying unit in embodiment. It is sectional drawing which shows the state of each part of carrying in / out of the reduced pressure drying unit in embodiment. It is sectional drawing which shows the state of each part in the vacuum drying process of the vacuum drying unit in embodiment. It is sectional drawing which shows the principal part of the board | substrate lift mechanism in embodiment. It is a figure which shows an example of the characteristic which the temperature of a lift pin changes in the single wafer process of the reduced pressure drying by embodiment. It is sectional drawing which shows the principal part of the board | substrate lift mechanism by one modification of embodiment. It is sectional drawing which shows the principal part of the board | substrate lift mechanism by another modification of embodiment. It is sectional drawing which shows the principal part of a board | substrate lift mechanism.

Explanation of symbols

10 Coating and Development Processing System 46 Vacuum Drying Unit (VD)
106 Chamber 108b Roller of internal roller transport path 110 Carrying-in port 112 Carrying-out port 114, 116 Gate mechanism 120 Transport drive source 126 Substrate lift mechanism 128 Lift pin 128a Pin body 128b Pin tip portion 128c Vent hole 130 Pin base 132 Cylinder
136 Elevating shaft 138 Exhaust port 140 Exhaust pipe 142 Vacuum exhaust device 152 Cooling gas supply pipe 170 Cylindrical cover

Claims (15)

A substrate support mechanism for supporting a substrate to be processed on the tip of a support pin,
The support pin is constituted by a hollow cylinder whose front end is closed and a side wall is provided with a vent hole,
A substrate support mechanism in which a gas supply unit or a vacuum source is connected to a base end portion of the cylinder so that a predetermined gas for temperature adjustment flows through the cylinder through the vent.   The substrate support mechanism according to claim 1, wherein the vent hole is provided in a portion close to a tip portion of the support pin.   The substrate support mechanism according to claim 1, wherein a plurality of the air holes are provided at different portions in the axial direction of the support pins.   The board | substrate support mechanism as described in any one of Claims 1-3 in which the said ventilation hole is provided with two or more in a site | part which differs in the surrounding direction of the said support pin.   The board | substrate support mechanism as described in any one of Claims 1-4 in which the said support pin has a resin-made pin tip part attached to the front-end | tip part of the said cylinder. It has a cylindrical cover body that covers the outer peripheral surface of the cylindrical body with a gap therebetween by closing the pin tip side from the vent hole,
The gas according to any one of claims 1 to 5, wherein the gas is allowed to flow through an inner gap of the cover body between an opening portion provided on a base end portion side of the cover body and communicating with outside air and a vent hole of the cylindrical body. The substrate support mechanism according to one item.   The substrate according to any one of claims 1 to 6, further comprising a pin support member, wherein a plurality of the support pins are arranged at predetermined intervals in a horizontal plane, and each of the support pins is supported substantially vertically. Support mechanism.   The substrate support mechanism according to claim 7, wherein a gas flow path is formed in the pin support member so as to be connected to a proximal end portion of the cylindrical body and communicate with the gas supply unit or the vacuum source.   The substrate support mechanism according to claim 7, further comprising an elevating part that moves the pin support member in a vertical direction in order to move the support pin up and down. A hermetically sealable chamber that accommodates the substrate to be processed immediately after the coating film is formed on the substrate in a removable manner;
The substrate support mechanism according to any one of claims 1 to 9, wherein the substrate is supported on the tip of the support pin in the chamber.
A vacuum drying apparatus comprising: a vacuum evacuation mechanism that evacuates the chamber in order to dry the coating film on the substrate in a reduced pressure state.   The gas supply unit or vacuum source of the substrate support mechanism is operated so that the temperature adjusting gas flows through the support pin during a period in which the vacuum exhaust operation of the vacuum exhaust mechanism is stopped. The vacuum drying apparatus according to 10.   The reduced-pressure drying apparatus according to claim 11, further comprising a purge gas supply unit configured to supply a purge gas into the chamber immediately after the vacuum exhaust operation of the vacuum exhaust mechanism is stopped.   The single-wafer processing of the reduced-pressure drying is repeatedly performed in a constant cycle, and the temperature of the pin tip portion of the support pin returns to a vicinity of a constant reference temperature immediately before each processing is started. The reduced-pressure drying apparatus described in 1.   The gas supply part or vacuum source is arranged outside the chamber, and the base end part of the cylinder of the gas supply part or vacuum source and the support pin through a vacuum-sealed air passage through the wall of the chamber The reduced-pressure drying apparatus according to any one of claims 10 to 13, wherein A chamber for accommodating a substrate to be processed in a removable manner;
The substrate support mechanism according to any one of claims 1 to 9, wherein the substrate is supported on the tip of the support pin in the chamber.
A substrate processing apparatus comprising: a processing unit configured to perform a predetermined process in which an atmospheric temperature changes on the substrate in the chamber.

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