JP5008147B2 - Vacuum dryer - Google Patents

Description

  The present invention relates to a reduced-pressure drying apparatus that performs a drying process in a reduced-pressure environment on a substrate to be processed to which a processing liquid is applied in order to form a coating film in a photolithography process.

For example, in the manufacture of an FPD (flat panel display), after a predetermined film is formed on a substrate to be processed such as a glass substrate, a photoresist (hereinafter referred to as a resist) as a processing liquid is applied to form a resist film. The circuit pattern is formed by a so-called photolithography process in which the resist film is exposed corresponding to the circuit pattern and developed.
In the resist film forming step, after applying the resist to the substrate, a reduced pressure drying process is performed in which the applied film is dried under reduced pressure.
Conventionally, as an apparatus for performing such a reduced pressure drying process, for example, there is a reduced pressure drying unit disclosed in Patent Document 1 shown in a sectional view of FIG.

In the reduced-pressure drying processing unit shown in FIG. 10, the lower chamber 61 and the upper chamber 62 are in close contact with each other to form a processing space therein. In the processing space, a stage 63 for placing a substrate to be processed is provided. The stage 63 is provided with a plurality of fixing pins 66 for placing the substrate G thereon.
In this reduced-pressure drying processing unit, when the substrate G coated with resist on the surface to be processed is loaded, the substrate G is placed on the stage 63 via the fixing pins 66.
Next, the upper chamber 62 comes into close contact with the lower chamber 61, and the substrate G is placed in an airtight processing space.

Next, the atmosphere in the processing space is exhausted from the exhaust port 64 to obtain a predetermined reduced pressure atmosphere. By maintaining this reduced pressure state for a predetermined time, the solvent such as thinner in the resist solution is evaporated to some extent, the solvent in the resist solution is gradually released, and the drying of the resist is promoted without adversely affecting the resist. The
JP 2000-181079 A

Conventionally, in this vacuum drying process, if the substrate is supported by a fixing pin, the shape of the contact portion of the fixing pin is transferred to the substrate. Many measures have been taken to avoid it.
However, in recent years, the chamfered shapes have diversified and the problem that the outside of the pixel area cannot be supported, and as the screen size increases, even if the area other than the pixel area is supported by a fixed pin, the flexure increases and the resist is dried. Other issues have also arisen that adversely affect processing.
For this reason, in order to solve any of the problems, it is necessary to support the inside of the pixel region with a pin, and even in that case, a technique capable of preventing the transfer of the pin has been demanded.

In the vacuum drying process disclosed in Patent Document 1, the temperature of the stage 63 is adjusted after the resist coating process, and control is performed so as not to change the temperature of the substrate G, whereby the fixing pin 66 is applied to the substrate G. Transcription is suppressed.
However, in the method disclosed in Patent Document 1, since the same portion of the substrate G is supported by pins while the reduced-pressure drying process is performed on the substrate G, a resist is formed between a portion that contacts the pin and a portion that does not contact the pin. There is a possibility that transfer of pins may occur due to a difference in drying speed.
Further, even if the temperature of the substrate G does not change, the temperature of the pins supporting the substrate G gradually decreases due to the reduced pressure in the chamber, and the temperature difference between the pins and the substrate G may be widened to cause transfer. .

  The present invention has been made under the circumstances as described above. In a substrate processing apparatus for drying a processing liquid on a processing substrate coated with a processing liquid to form a coating film, the processing target is provided. It is an object of the present invention to provide a substrate processing apparatus capable of preventing transfer of pins supporting the substrate to the substrate.

In order to solve the above-described problem, a reduced-pressure drying apparatus according to the present invention is a reduced-pressure drying apparatus that performs a reduced-pressure drying treatment of the processing liquid on a substrate to be processed coated with a processing liquid to form a coating film, a chamber for accommodating the substrate to be processed, and pressure reducing means for reducing the pressure within the chamber, wherein arranged in the chamber, a plurality of lift pins for supporting the substrate to be processed from below, a plurality of the one unit of said lift pins And a pin unit provided with a plurality of the units, lift pin elevating means for elevating and lowering the lift pins in each unit independently, and adjusting the temperature of each lift pin in one unit to different specific temperatures, and other Lift pins for adjusting the temperature of each lift pin in the unit to the same specific temperature as the specific temperature of each lift pin in the one unit And adjusting means, the control means for controlling the driving of the lift pin elevating means, the vacuum drying process the temperature of the substrate varies with the previously set plurality of substrate temperature range detection for detecting a predetermined temperature range from the temperature range And a specific temperature of each lift pin in each unit that is temperature-controlled by the lift pin temperature adjustment means is a temperature included in any one of the preset temperature ranges. The temperature of the lift pin is set to a temperature included in a different temperature range, and the control unit is disposed in each of the units adjusted to a specific temperature included in the temperature range detected by the substrate temperature range detection unit. in the lift pins, the performs drive control of the lift pin elevating means to support a substrate to be processed, and, accompanied to the temperature change of the substrate by the vacuum drying process , Different said temperature is adjusted to a specific temperature at the lift pins disposed in each unit, the supporting substrate to be processed, characterized in that the switching said sequential contact portion between the substrate and lift pins disposed in each unit .

With this configuration, switching control is performed so that the lift pins that support the substrate to be processed become pins that are adjusted to a temperature that approximates the substrate temperature, and the contact location between the lift pins and the substrate is switched along with the switching. .
That is, during the vacuum drying process, the substrate can always be supported by lift pins that are temperature-controlled to substantially the same temperature as the substrate temperature, even if the atmospheric pressure or temperature in the chamber changes, and at the same location on the substrate. Lift pins do not touch for a long time. For this reason, the influence with respect to the board | substrate of a lift pin can be made as small as possible, and the transcription | transfer to the board | substrate of the lift pin which supports a board | substrate can be prevented.

Further, the apparatus includes an atmospheric pressure detection unit that detects an atmospheric pressure in the chamber, and a storage unit that records a conversion table indicating a correlation between the atmospheric pressure in the chamber and the substrate temperature range, and the substrate temperature range detection unit includes: It is desirable to refer to the conversion table based on the atmospheric pressure in the chamber detected by the atmospheric pressure detection means and output a predetermined temperature range as a detection result.
With this configuration, the substrate temperature range can be easily output based on the detected atmospheric pressure.

Alternatively, substrate temperature detection means for detecting the temperature of the substrate to be processed arranged in the chamber, and storage means for recording a conversion table for sorting the substrate temperature detected by the substrate temperature detection means into a predetermined substrate temperature range; The substrate temperature range detecting means may refer to the conversion table based on the substrate temperature detected by the substrate temperature detecting means and output a predetermined temperature range as a detection result.
With this configuration, the substrate temperature range can be easily output based on the detected substrate temperature.

Alternatively, the storage unit stores a conversion table indicating a correlation between the elapsed time of the reduced-pressure drying process and the substrate temperature range, and the substrate temperature range detecting unit is configured to perform the conversion based on the elapsed time of the reduced-pressure drying process. A predetermined temperature range may be output as a detection result with reference to the table.
With this configuration, the substrate temperature range can be easily output based on the elapsed time of the vacuum drying process.

  According to the present invention, in a substrate processing apparatus that forms a coating film by drying the processing liquid on the target substrate to which the processing liquid has been applied, the transfer of the pins that support the target substrate to the substrate is prevented. It is possible to obtain a substrate processing apparatus that can perform the above process.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a coating and developing treatment system including a reduced pressure drying apparatus according to the present invention.
This coating / development processing system 10 is installed in a clean room. For example, a glass substrate for LCD is used as a substrate to be processed, and a series of cleaning, resist coating, pre-baking, developing, post-baking, and the like during a photolithography process in the LCD manufacturing process. The processing is performed. The exposure process is performed by an external exposure apparatus 12 installed adjacent to this system.

In the coating and developing system 10, a horizontally long process station (P / S) 16 is arranged at the center, and a cassette station (C / S) 14 and an interface station (I / F) are arranged at both ends in the longitudinal direction (X direction). 18 are arranged.
The cassette station (C / S) 14 is a port for loading and unloading a plurality of cassettes C in such a manner that the substrates G are stacked in multiple stages, and up to four can be placed side by side in a horizontal direction (Y direction). A cassette stage 20 and a transport mechanism 22 for taking the substrate G in and out of the cassette C on the stage 20 are provided. The transport mechanism 22 has a means for holding the substrate G, for example, a transport arm 22a, can be operated with four axes of X, Y, Z, and θ, and is adjacent to the adjacent process station (P / S) 16 side and the substrate G. Delivery is now possible.

In the process station (P / S) 16, the processing units are arranged in the order of the process flow or the process on a pair of parallel and opposite lines A and B extending in the horizontal system longitudinal direction (X direction).
That is, in the process line A from the cassette station (C / S) 14 side to the interface station (I / F) 18 side, a carry-in unit (IN PASS) 24, a cleaning process unit 26, and a first thermal processing unit 28 are provided. The coating process unit 30 and the second thermal processing unit 32 are arranged in a line in this order from the upstream side along the first flat flow path 34.

More specifically, the carry-in unit (IN PASS) 24 receives the unprocessed substrate G from the transfer mechanism 22 of the cassette station (C / S) 14 and inputs it into the first flat flow transfer path 34 at a predetermined tact. It is configured.
The cleaning process unit 26 is provided with an excimer UV irradiation unit (E-UV) 36 and a scrubber cleaning unit (SCR) 38 in order from the upstream side along the first flat flow path 34.

  The first thermal processing unit 28 is provided with an adhesion unit (AD) 40 and a cooling unit (COL) 42 in order from the upstream side. The coating process unit 30 is provided with a resist coating unit (COT) 44 and a vacuum drying unit (VD) 46 as a vacuum drying apparatus according to the present invention in order from the upstream side.

The second thermal processing unit 32 is provided with a pre-bake unit (PRE-BAKE) 48 and a cooling unit (COL) 50 from the upstream side.
A pass unit (PASS) 52 is provided at the end point of the first flat flow conveyance path 34 located adjacent to the downstream side of the second thermal processing unit 32.
The substrate G that has been transported in a flat flow on the first flat flow transport path 34 is transferred from the pass unit (PASS) 52 at the end point to the interface station (I / F) 18.

  On the other hand, in the downstream process line B from the interface station (I / F) 18 side to the cassette station (C / S) 14 side, a development unit (DEV) 54, a post-bake unit (POST-BAKE) 56, a cooling unit are provided. A unit (COL) 58, an inspection unit (AP) 60, and a carry-out unit (OUT PASS) 62 are arranged in a line in this order from the upstream side along the second flat flow path 64.

  Here, the post-bake unit (POST-BAKE) 56 and the cooling unit (COL) 58 constitute a third thermal processing unit 66. The carry-out unit (OUT PASS) 62 is configured to receive the processed substrates G one by one from the second flat flow transfer path 64 and pass them to the transfer mechanism 22 of the cassette station (C / S) 14. .

  Further, an auxiliary transfer space 68 is provided between the process lines A and B, and a shuttle 70 on which the substrate G can be horizontally placed in units of one sheet is processed in the process line direction (X direction) by a drive mechanism (not shown). You can move in both directions.

  Further, the interface station (I / F) 18 includes a transport device 72 for exchanging the substrate G with the first and second flat flow transport paths 34 and 64 and the adjacent exposure device 12. A rotary stage (R / S) 74 and a peripheral device 76 are arranged around the device 72. The rotary stage (R / S) 74 is a stage that rotates the substrate G in a horizontal plane, and is used to change the orientation of the rectangular substrate G when it is transferred to the exposure apparatus 12. The peripheral device 76 connects, for example, a titler (TITLER), a peripheral exposure device (EE), and the like to the second flat flow path 64.

  FIG. 2 shows a processing procedure of the entire process for one substrate G in this coating and developing processing system. First, in the cassette station (C / S) 14, the transport mechanism 22 takes out the substrate G from any one of the cassettes C on the stage 20, and uses the removed substrate G as a process line of the process station (P / S) 16. It carries in to the A side carrying-in unit (IN PASS) 24 (step S1 of FIG. 2). The substrate G is transferred or loaded onto the first flat flow path 34 from the carry-in unit (IN PASS) 24.

The substrate G put into the first flat transport path 34 is first subjected to an ultraviolet cleaning process and a scrubbing cleaning process by the excimer UV unit (E-UV) 36 and the scrubber cleaning unit (SCR) 38 in the cleaning process unit 26 in order. (Steps S2 and S3 in FIG. 2).
The scrubber cleaning unit (SCR) 38 removes particulate dirt from the substrate surface by performing brushing cleaning and blow cleaning on the substrate G that moves horizontally on the flat flow path 34, and then rinses. Finally, the substrate G is dried using an air knife or the like. When a series of cleaning processes in the scrubber cleaning unit (SCR) 38 is completed, the substrate G reaches the first thermal processing unit 28 as it is down the first flat flow path 34.

  In the first thermal processing unit 28, the substrate G is first subjected to an adhesion process using vapor HMDS in an adhesion unit (AD) 40, and the surface to be processed is hydrophobized (step of FIG. 2). S4). After the completion of the adhesion process, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 42 (step S5 in FIG. 2). Thereafter, the substrate G is carried into the coating process unit 30 along the first flat flow path 34.

  In the coating process section 30, the substrate G is first coated with a resist solution on the upper surface (surface to be processed) by a spinless method using a slit nozzle while being flown flat in a resist coating unit (COT) 44, and immediately after that, adjacent to the downstream side. A vacuum drying unit (VD) 46 receives a drying process at room temperature using a reduced pressure (step S6 in FIG. 2).

  The substrate G that has left the coating process unit 30 reaches the second thermal processing unit 32 through the first flat flow path 34. In the second thermal processing section 32, the substrate G is first pre-baked by the pre-bake unit (PRE-BAKE) 48 as a heat treatment after resist coating or a heat treatment before exposure (step S7 in FIG. 2).

  By this pre-baking, the solvent remaining in the resist film on the substrate G is evaporated and removed, and the adhesion of the resist film to the substrate is enhanced. Next, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 50 (step S8 in FIG. 2). Thereafter, the substrate G is taken from the pass unit (PASS) 52 at the end point of the first flat flow transport path 34 to the transport device 72 of the interface station (I / F) 18.

  In the interface station (I / F) 18, the substrate G undergoes a turn of 90 degrees, for example, by the rotary stage 74, and then is carried into the peripheral exposure device (EE) of the peripheral device 76, where it adheres to the peripheral portion of the substrate G. After receiving the exposure for removing the resist to be developed during development, the resist is sent to the adjacent exposure apparatus 12 (step S9 in FIG. 2).

In the exposure apparatus 12, a predetermined circuit pattern is exposed to the resist on the substrate G. Then, when the substrate G that has undergone pattern exposure is returned from the exposure apparatus 12 to the interface station (I / F) 18, first, it is carried into a titler (TITLER) of the peripheral device 76, where it is transferred to a predetermined portion on the substrate. Is recorded (step S10 in FIG. 2). Thereafter, the substrate G is carried from the transfer device 72 to the starting point of the developing unit (DEV) 54 of the second flat flow transfer path 64 laid on the process line B side of the process station (P / S) 16. .
In this way, the substrate G is now transported on the second flat transport path 64 toward the downstream side of the process line B. In the first development unit (DEV) 54, the substrate G is subjected to a series of development processes of development, rinsing, and drying while being conveyed in a flat flow (step S11 in FIG. 2).

  The substrate G that has undergone a series of development processes in the development unit (DEV) 54 is sequentially passed through the third thermal processing unit 66 and the inspection unit (AP) 60 while being put on the second flat flow path 64 as it is. To do. In the third thermal processing section 66, the substrate G is first subjected to post-baking as post-development heat treatment in the post-baking unit (POST-BAKE) 56 (step S12 in FIG. 2).

  By this post-baking, the developer and the cleaning solution remaining in the resist film on the substrate G are evaporated and removed, and the adhesion of the resist pattern to the substrate is enhanced. Next, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 58 (step S13 in FIG. 2). In the inspection unit (AP) 60, non-contact line width inspection, film quality / film thickness inspection, and the like are performed on the resist pattern on the substrate G (step S14 in FIG. 2).

  The carry-out unit (OUT PASS) 62 receives the substrate G that has been processed in all steps from the second flat-carrying conveyance path 64 and transfers it to the conveyance mechanism 22 of the cassette station (C / S) 14. On the cassette station (C / S) 14 side, the transport mechanism 22 accommodates the processed substrate G received from the carry-out unit (OUT PASS) 62 in any one (usually the original) cassette C (FIG. 2). Step S15).

In the coating and developing treatment system 10, the vacuum drying apparatus of the present invention can be applied to the vacuum drying unit (VD) 46 in the coating process 30.
Next, the configuration and operation of the reduced-pressure drying unit (VD) 46 in the coating process unit 30 according to the preferred embodiment of the present invention will be described with reference to FIGS.
FIG. 3 is a plan view showing the overall configuration of the coating process unit 30. 4 to 6 show the configuration of the vacuum drying unit (VD) 46, FIG. 4 is a plan view thereof, FIG. 5 is a sectional view thereof, and FIG. 6 is a partially enlarged sectional view thereof.

  In FIG. 3, the resist coating unit (COT) 44 floats in the air on the floating stage 80 that constitutes a part or one section of the first flat flow path 34 (FIG. 1). A substrate transport mechanism 82 for transporting the substrate G in the longitudinal direction of the stage (X direction), a resist nozzle 84 for supplying a resist solution to the upper surface of the substrate G transported on the stage 80, and a resist nozzle 84 between the coating processes. And a nozzle refresh unit 86 for refreshing.

A large number of gas injection ports 88 for injecting a predetermined gas (for example, air) upward are provided on the upper surface of the stage 80, and the substrate G is removed from the upper surface of the stage by the pressure of the gas discharged from the gas injection ports 88. It is configured to rise to a certain height.
The substrate transport mechanism 82 includes a pair of guide rails 90A and 90B extending in the X direction across the stage 80, a slider 92 that can reciprocate along the guide rails 90A and 90B, and both side ends of the substrate G on the stage 80. And a substrate holding member (not shown) such as a suction pad provided on the slider 92 so as to detachably hold the portion, and the slider 92 is moved in the transport direction (X direction) by a linear movement mechanism (not shown). ), The substrate G is floated and conveyed on the stage 80.

  The resist nozzle 84 is a long nozzle that extends above the stage 80 in a horizontal direction (Y direction) perpendicular to the transport direction (X direction), and passes through the substrate G that passes directly under the predetermined application position. The resist solution is discharged in a strip shape from the slit-shaped discharge port with respect to the upper surface. Further, the resist nozzle 84 is configured to be movable in the X direction integrally with the nozzle support member 94 that supports the nozzle, and is movable up and down in the Z direction, and moves between the application position and the nozzle refreshing portion 86. It can be done.

  The nozzle refresh unit 86 is held by the support member 96 at a predetermined position above the stage 80, and as a preparation for the coating process, a priming processing unit 98 for causing the resist nozzle 84 to discharge a resist solution, and a resist nozzle And a nozzle cleaning mechanism 102 for removing the resist adhering to the vicinity of the 84 resist discharge ports.

  In the resist coating unit (COT) 44 configured as described above, first, the substrate G sent by, for example, roller conveyance by the first thermal processing unit 28 in the previous stage is set on the front end side on the stage 80. The slider 92 that has been carried into the carry-in section and has been waiting there holds and receives the substrate G. On the stage 80, the substrate G receives the pressure of the gas (air) injected from the gas injection port 88 and keeps the floating state in a substantially horizontal posture.

  Then, the slider 92 moves in the transport direction (X direction) toward the reduced-pressure drying unit (VD) 46 while holding the substrate G, and when the substrate G passes under the resist nozzle 84, the resist nozzle 84 By discharging the resist solution in a strip shape toward the upper surface of the substrate G, a liquid film of the resist solution is formed over the substrate G so that a carpet is laid from the front end to the rear end of the substrate G.

  The substrate G thus coated with the resist solution is then levitated and conveyed on the stage 80 by the slider 92, passes over the rear end of the stage 80 and moves to a roller conveyance path 104 described later, where the holding by the slider 92 is released. . The substrate G transferred to the roller transport path 104 is then transported on the roller transport path 104 by roller transport, as will be described later, and is carried into the subsequent vacuum drying unit (VD) 46.

Next, the vacuum drying unit (VD) 46 as the vacuum drying apparatus according to the present invention will be described in detail.
As shown in FIG. 3, a roller conveyance path 104 constituting a part or one section of the first flat flow conveyance path 34 is laid on the extension (downstream side) of the stage 80 of the resist coating unit (COT) 44. Has been. The roller conveyance path 104 is continuously laid inside and outside (front and rear) of the chamber 106 of the vacuum drying unit (VD) 46.

  More specifically, the roller conveyance path 104 of the reduced-pressure drying unit (VD) 46 includes a carry-side roller conveyance path 104 a laid on the conveyance upstream side of the chamber 106, that is, a carry-in side, and an interior laid in the chamber 106. The roller conveyance path 104b and a carry-out side roller conveyance path 104c laid on the conveyance downstream side, that is, the carry-out side of the chamber 106 are configured.

  Each roller conveyance path 104a, 104b, 104c is formed by rotating a plurality of rollers 108a, 108b, 108c arranged at appropriate intervals in the conveyance direction (X direction) by each independent or common conveyance driving unit. Is sent in the conveyance direction (X direction) by roller conveyance. Here, the carry-in side roller conveyance path 104 a receives the substrate G carried out from the stage 80 of the resist coating unit (COT) 44 as an extension of the floating conveyance, and rolls it into the chamber 106 of the vacuum drying unit (VD) 46. It functions to send in.

  The internal roller transport path 104b draws the substrate G sent by the roller transport from the carry-in side roller transport path 104a into the chamber 106 by roller transport at the same speed, and the substrate G that has been subjected to the vacuum drying process in the chamber 106. It functions so as to be sent out of the chamber 106 by roller conveyance. The carry-out side roller conveyance path 104c is pulled out by the roller conveyance at the same speed as the processed substrate G sent out from the internal roller conveyance path 104b in the chamber 106, and the subsequent processing section (second thermal processing section 32). ) To send to.

  As shown in FIGS. 3 to 5, the chamber 106 of the vacuum drying unit (VD) 46 is formed in a relatively flat rectangular parallelepiped, and has a space in which the substrate G can be accommodated horizontally. A pair of (upstream and downstream) chamber sidewalls facing each other in the transport direction (X direction) of the chamber 106 is formed with a slit-shaped transport inlet 110 and a transport outlet formed in a size that allows the substrate G to finally pass through in a flat flow. 112 are provided. Further, gate mechanisms 114 and 116 for opening and closing the carry-in port 110 and the carry-out port 112 are attached to the outer wall of the chamber 106. Note that the upper surface portion of the chamber 106 is removable for maintenance.

In the chamber 106, the rollers 108b constituting the internal roller transport unit 104b are arranged in a row at an appropriate distance in the transport direction (X direction) at a height position corresponding to the loading / unloading ports 110 and 112. Part or all of the rollers 108b are connected to a rotational drive source 120 such as a motor provided outside the chamber 106 via an appropriate transmission mechanism.
As shown in FIG. 4, each roller 108 b is configured as a rod body that contacts the back surface of the substrate G with a cylindrical portion or a column portion having a uniform outer diameter, and both end portions thereof are the left and right side walls of the chamber 106. It is rotatably supported by a bearing (not shown) provided in the vicinity thereof. The outer wall portion of the chamber 106 through which the rotating shaft 122 of the transmission mechanism passes is sealed with a seal member 124.

  Further, as shown in FIG. 5, the reduced-pressure drying unit (VD) 46 includes a plurality of lift pins 128 for supporting the substrate G in the chamber 106 so as to be raised and lowered substantially horizontally. The plurality of lift pins 128 are arranged in a predetermined arrangement pattern in the chamber 106, and each lift pin 128 can be moved up and down in the vertical direction by a corresponding lift mechanism 126 (lift pin lifting means). For the lift mechanism 126, for example, a cylinder drive or a ball screw drive system is used.

More specifically, as shown in FIGS. 4 and 5, a plurality of lift pins 128 in the gap between two rollers 108 b adjacent to each other along the substrate transport direction (X direction), three lift pins 128 in this embodiment. Are arranged to be vertically movable in the vertical direction.
The three lift pins 128 constitute a pin unit 129 as one group. For example, as shown in FIG. 4, the pin unit 129 has a plurality of units (7 units in the figure) arranged in the X direction and the Y direction, respectively, whereby lift pins 128 are arranged in a matrix in the chamber 106. Are arranged in a state.

As shown in FIG. 5, each lift pin 128 has a straight rod-like pin main body 128a that moves up and down by a lift mechanism 126, and a pin tip portion 128b that protrudes vertically upward from the upper end of the pin main body 128a.
The pin body 128a is configured as a rigid hollow tube made of, for example, stainless steel (SUS). The pin tip portion 128b is formed of a resin such as PEEK (polyetheretherketone), for example, and has a very thin shape with a rounded tip, and is configured to support the substrate G in point contact with a minimal area. Has been.
Further, the pin main body 128a penetrates the bottom wall of the chamber 106 in an airtight manner via the seal member 134 and can be moved up and down by the lift mechanism 126 as described above.

  For example, as shown in FIG. 6, each lift pin 128 includes a Peltier element 131 in the pin tip portion 128 b, and a predetermined current is supplied to the Peltier element 131 by the current supply control means 132, and the pin tip The portion 128b is adjusted to have a predetermined temperature (that is, the lift pin temperature adjusting means is configured by the Peltier element 131 and the current supply control means 132).

  Specifically, the pin tip portions 128b of the three lift pins 128 constituting each pin unit 129 are set to have different temperatures. For example, as shown in FIG. 6, if the three lift pins 128 are a pin A, a pin B, and a pin C, respectively, the pin A is 23 ° C. which is the same as the initial temperature of the glass substrate G, and the pin B is 21 ° C. lower than that. Pin C is further lowered to 17 ° C. and is controlled to maintain the respective temperatures.

In addition, since the lift pins 128 in each pin unit 129 are independently controlled to be lifted and lowered, in each pin unit 129, one of the three lift pins 128 protrudes upward to support the glass substrate G. Control is performed as follows.
That is, for each pin A, pin B, or pin C (corresponding to lift pin 128) in all the pin units 129, the corresponding lift mechanism 126 moves forward (up) or retracts in the same stroke with respect to the lift pin 128 at the same timing. (Descent) Control is performed to drive all at once. At this time, for each pin A, pin B, or pin C, the height of the tip of the pin is aligned, and as shown in FIG. 5, the lowered position where the tip of the pin is lower than the roller conveyance path 104b, and the tip of the pin is the roller. It is possible to move up and down between a raised position higher than the conveyance path 104b.

  In addition, exhaust ports 138 are formed at one or a plurality of locations on the bottom wall of the chamber 106. A vacuum exhaust device 142 (decompression unit) is connected to these exhaust ports 138 through an exhaust pipe 140. Each vacuum evacuation device 142 has a vacuum pump (not shown) for evacuating the chamber 106 from the atmospheric pressure state to maintain a reduced pressure state of a predetermined degree of vacuum. In addition, in order to average the dispersion | variation in the exhaust capability of these several vacuum exhaust apparatuses 142, you may connect each exhaust pipe 140 with exhaust pipes (not shown).

  Further, cylindrical nitrogen gas ejection portions 144 extending in the Y direction are provided at both ends in the chamber 106, that is, near the carry-in port 110 and the carry-out port 112 and lower than the roller conveyance path 104b. These nitrogen gas ejection portions 144 are made of, for example, a porous hollow tube formed by sintering metal powder, and are connected to a nitrogen gas supply source (not shown) via a pipe 146 (FIG. 4). . After the vacuum drying process is completed, the chamber 106 blows out nitrogen gas from the entire peripheral surface of the tube.

  In addition, an atmospheric pressure sensor 135 (atmospheric pressure detection means) for detecting the atmospheric pressure in the room is provided at substantially the center in the chamber 106. As the atmospheric pressure sensor 135, for example, a diaphragm gauge that detects a deformation of a diaphragm (diaphragm) by a change in capacitance and obtains a pressure can be used.

  Further, the vacuum drying unit (VD) 46 is provided with a control device 133 (control means) including a computer and a storage device for controlling the operation thereof, and the gate mechanisms 114 and 116 are rotated based on the computer program to be executed. Drive control is performed for each of the drive source 120, the lift mechanism 126 of each pin unit 129, the vacuum exhaust device 142, the current supply control means 132, and the like.

The signal detected by the atmospheric pressure sensor 135 is output to the control device 133, and the control device 133 drives and controls the lift mechanism 126 of each pin unit 129 based on the detected pressure in the chamber chamber. ing.
Specifically, the control device 133 refers to a conversion table that is recorded in advance in the storage unit 133a (storage means) provided and indicates the correlation between the pressure in the chamber chamber and the temperature of the substrate G (temperature range), and each temperature varies. The lift pin 128 whose temperature has been adjusted is switched.

  As a specific example, the storage unit 133a in the control device 133 indicates that “the temperature of the substrate G is within the first substrate temperature range (for example, while the atmospheric pressure in the chamber 106 is reduced from atmospheric pressure to 53088.5 Pa”). The temperature of the substrate G is in the second substrate temperature range (for example, 21 ° C. or more and less than 23 ° C.) while the pressure in the chamber 106 is reduced from 53088.4 Pa to 293.9 Pa. , While the pressure in the chamber 106 is reduced from 293.8 Pa to 19.5 Pa, the temperature of the substrate G is in a third substrate temperature range (for example, 17 ° C. or higher and lower than 21 ° C.) ” A table T (see FIG. 7) is recorded.

The control device 133 functions as a substrate temperature range detection means, refers to the conversion table T recorded in the storage unit 133a based on the atmospheric pressure value in the chamber 106 detected by the atmospheric pressure sensor 135, and the substrate at that time The substrate temperature range of G is detected.
Then, in each pin unit 129, the control device 133 adjusts the temperature of the pin A (23 ° C.), the pin B (21 ° C.), and the pin C (17 ° C.) adjusted to a predetermined temperature included in the detected substrate temperature range. Control is performed so that one of the lift pins 128 supports the substrate G.

Next, the operation of the vacuum drying unit (VD) 46 will be described based on the flow of FIG. 8 and the lift pin operation transition diagram of FIG.
The substrate G coated with the resist solution by the upstream resist coating unit (COT) 44 is transferred from the floating conveyance path on the stage 80 onto the carry-in side roller conveyance path 104a by flat flow conveyance.
Thereafter, the substrate G moves by roller conveyance on the carry-in side roller conveyance path 104a, and enters the chamber 106 of the reduced pressure drying unit (VD) 46 from its carry-in port 110 (step ST1 in FIG. 8). At this time, the carry-in entrance 110 is opened by the gate mechanism 114.

The inner roller conveyance path 104b also performs a roller conveyance operation at the same conveyance speed as the roller conveyance operation of the carry-in side roller conveyance path 104a by the rotational drive of the rotation drive source 120. As shown in FIG. The substrate G entering from 110 is drawn into the interior of the chamber 106 by roller conveyance. At this time, all the lift mechanisms 126 are kept waiting at the lowered position where the tip ends of all the lift pins 128 are lower than the transport surface of the internal roller transport path 104b.
When the substrate G arrives at a substantially central position in the chamber 106, the roller transfer operation of the internal roller transfer path 104b stops there. At the same time or just before this, the roller conveyance operation of the carry-in side roller conveyance path 104a may be stopped.

  In this manner, the substrate G on which the resist solution has been applied by the resist coating unit (COT) 44 is continuously transported on the carry-in side roller transport path 104a and the inner roller transport path 104b, and the reduced pressure drying unit (VD). It is carried into 46 chambers 106. Immediately after this, the gate mechanisms 114 and 116 are operated to close the carry-in port 110 and the carry-out port 112 that have been opened so far, and the chamber 106 is sealed.

On the other hand, when the chamber 106 is sealed, the evacuation device 142 is operated, and the inside of the chamber 106 is evacuated to a predetermined degree of vacuum (step ST2 in FIG. 8). Thus, by placing the substrate G in the reduced pressure atmosphere in the chamber 106, the resist liquid film on the substrate G is efficiently and appropriately dried at room temperature.
The electrical signal detected by the atmospheric pressure sensor 135 is constantly input to the control device 133, and the control device 133 starts monitoring the atmospheric pressure in the chamber 106, and based on the detected atmospheric pressure value, the temperature of the substrate G at that time Is detected as a predetermined substrate temperature range (step ST3 in FIG. 8). The substrate temperature range is, for example, one of the first to third substrate temperature ranges, and the first substrate temperature range includes the initial temperature of the loaded substrate G, for example, 23 ° C. or more and less than 25 ° C. The second substrate temperature range is lower, for example, 21 ° C. or higher and lower than 23 ° C., and the third substrate temperature range is, for example, 17 ° C. or higher and lower than 21 ° C.

  Further, the current supply control means 132 shown in FIG. 6 supplies a predetermined current to the Peltier element 131 of the pin tip portion 128b in each lift pin 128 in all the pin units 129, and the pin tip portion 128b is pin A to C. Every time, the temperature is adjusted to a predetermined temperature (step ST4 in FIG. 8). Specifically, for example, the lift pin 128 corresponding to the pin A is included in the first substrate temperature range (including the initial temperature of the loaded substrate G), and the lift pin 128 corresponding to the pin B is at a lower temperature. The lift pins 128 corresponding to 21 ° C. included in the second substrate temperature range and the pin C are set to 17 ° C. included in the lower third substrate temperature range.

Next, the lifting / lowering control of the lift pins 128 is performed based on a predetermined algorithm of a computer program executed in the control device 133.
That is, in all the pin units 129, among the three lift pins 128 (pin A, pin B, pin C), the lift pin corresponding to the pin A set to 23 ° C. which approximates the initial temperature of the substrate G to be loaded. 128 lift mechanisms 126 are driven. Then, the pin main body 128a is raised by a predetermined stroke so that the tip of the pin is at a predetermined height position exceeding the conveying surface of the inner roller conveying path 104b.

As a result, the substrate G is transferred from the inner roller conveyance path 104b to the pin tip portion 128b of the lift pin 128 corresponding to the pin A while maintaining the horizontal posture, and as shown in FIG. (Step ST5 in FIG. 8).
At this time, the pin tip portion 128b in contact with the substrate G is in contact with the substrate G with a minimal area and is set to be substantially the same as the temperature of the substrate G (about 23 ° C.). There is no transfer of marks.

Here, when the reduced pressure drying process proceeds and the pressure in the chamber is reduced to a first pressure (for example, 53088.4 Pa), the controller 132 determines that the substrate temperature has shifted to the second substrate temperature range. (Step ST6 in FIG. 8).
Then, in all the pin units 129, the lift pins 128 corresponding to the pins B that are temperature-controlled at 21 ° C. included in the second substrate temperature range are driven, and the tip ends of the pin units are moved on the transfer surface of the inner roller transfer path 104b. Raise to a predetermined height position that exceeds. Further, the pin tip portion 128b of the pin A is lowered at the same time as the pin tip portion 128b of the pin B reaches the predetermined height position.

  As a result, the lift pins 128 that support the substrate G are switched from the pin A to the pin B as shown in FIG. 9B (step ST7 in FIG. 8). At this time, the pin tip portion 128b in contact with the substrate G is in contact with the substrate G at a location having a minimum area different from the pin A, and is substantially the same as the temperature of the substrate G (about 21 ° C.) which has been lowered due to the decompression in the chamber. Since the setting is the same, the trace of the pin tip portion 128b is not transferred to the substrate G.

When the vacuum drying process further proceeds and the chamber chamber is lowered to the second atmospheric pressure (for example, 293.8 Pa), the control device 132 determines that the substrate temperature has shifted to the third substrate temperature range (step ST8 in FIG. 8). ).
Then, in all the pin units 129, the lift pins 128 corresponding to the pins C adjusted to 17 ° C. included in the third substrate temperature range are driven, and the tip ends of the pin units are moved along the transfer surface of the internal roller transfer path 104b. Raise to a predetermined height position that exceeds. Further, the pin tip portion 128b of the pin B is lowered at the same time as the pin tip portion 128b of the pin C reaches the predetermined height position.

  As a result, the lift pins 128 that support the substrate G are switched from the pin B to the pin C as shown in FIG. 9C (step ST9 in FIG. 8). At this time, the pin tip portion 128b in contact with the substrate G is in contact with the substrate G at a location having a minimum area different from the pin B, and is substantially equal to the temperature (about 17 ° C.) of the substrate G whose temperature has decreased due to the decompression in the chamber. Since the setting is the same, the trace of the pin tip portion 128b is not transferred to the substrate G.

  When the vacuum drying process further proceeds and the chamber chamber is lowered to a third atmospheric pressure (for example, 19.5 Pa), the control device 133 determines that the vacuum drying process is completed, and stops the exhaust operation by the vacuum exhaust device 142. (Step ST10 in FIG. 8). Instead of this, the nitrogen gas ejection part 144 flows nitrogen gas into the chamber 106. Then, after the indoor pressure rises to atmospheric pressure, the gate mechanisms 114 and 116 are operated to open the carry-in port 110 and the carry-out port 112.

  Before and after this, the control device 132 drives the lift mechanism 126 of the lift pin 128 corresponding to the pin C in all the pin units 129, and the tip of the pin is lower than the transport surface of the internal roller transport path 104b. Lower to the height of the standby position. By the lowering operation of the lift mechanism 126, the substrate G is transferred from the tip of the lift pin 128 to the internal roller transport path 104b in a horizontal posture.

Immediately after this, the roller transport operation is started on the inner roller transport path 104b and the unload-side roller transport path 104c, and the substrate G just subjected to the decompression process is transported by the roller transport from the transport outlet 112, and remains in the second second stage. Is sent to the thermal processing section 32 in a flat flow (step ST11 in FIG. 8).
Simultaneously with the carry-out operation of the processed substrate G, the subsequent substrate G from the resist coating unit (COT) 44 is brought into the carry-in entrance by continuous roller conveyance on the carry-in side roller conveyance path 104a and the internal roller conveyance path 104b. It may be carried into the chamber 106 from 110.

As described above, according to the embodiment of the substrate processing apparatus of the present invention, in the vacuum drying unit (VD) 46, the lift pins 128 that support the substrate G become pins adjusted to a temperature that approximates the substrate temperature. Switching control is performed, and the contact location between the lift pin 128 and the substrate G is switched in accordance with the switching.
That is, during the drying process under reduced pressure, even if the atmospheric pressure or temperature in the chamber changes, the substrate G can always be supported by the lift pins 128 that are temperature-controlled to substantially the same temperature as the substrate temperature. The lift pin 128 does not contact the same place for a long time. For this reason, the influence with respect to the board | substrate G of the lift pin 128 can be made as small as possible, and it can prevent that the trace of the lift pin 128 is transcribe | transferred to the board | substrate G.

In the above embodiment, the atmospheric pressure in the chamber 106 is monitored, and the lift pins 128 are switched based on the correlation (conversion table) between the atmospheric pressure recorded in advance and the substrate temperature range. However, as another method, For example, by providing a radiation thermometer (substrate temperature detecting means) in the chamber 106, the temperature of the substrate G is directly measured, and based on the measured temperature, a conversion table (in this case, the substrate temperature is sorted into a predetermined substrate temperature range). For example, the lift pin 128 may be switched.
Alternatively, the lift pins 128 may be switched over time based on a conversion table in which the correlation between the time passage and the substrate temperature range is recorded in advance.

  In the above-described embodiment, the lift pin temperature adjusting means is configured by the Peltier element 131 and the current supply control means 132. However, the present invention is not limited to this. It is good also as a structure which adjusts temperature.

  Next, the vacuum drying apparatus according to the present invention will be further described based on examples. In this example, the effect was verified by actually performing an experiment using the vacuum drying apparatus having the configuration described in the above embodiment.

First, in order to set the substrate temperature range used for the support pin switching control, the chamber is depressurized from the atmospheric pressure to the depressurization target value (19.5 Pa) at a predetermined exhaust speed (flow rate). A transition curve was obtained. As a result, the result shown by the graph in FIG. 11 was obtained. In FIG. 11, the horizontal axis represents the elapsed time (sec), and the vertical axis represents the atmospheric pressure value (Pa).
As shown in FIG. 11, the depressurization transition from the atmospheric pressure ( 100,000 Pa ) to the target value (19.5 Pa) is from a period from atmospheric pressure to 53088.4 Pa, from 53088.4 Pa to 293.8 Pa, from 293.8 Pa. In the period up to the target value (19.5 Pa), the depressurization gradients were different.

Based on this result, the substrate temperature in the period from the atmospheric pressure to 53088.4 Pa is set to the first substrate temperature range (23 ° C. or more and less than 25 ° C.) as in the above embodiment, The substrate temperature in the period from 53088.4 Pa to 293.8 Pa in the second substrate temperature range (21 ° C. or more and less than 23 ° C.), and the substrate temperature in the chamber in the period from 293.8 Pa to 19.5 Pa in the chamber Was the third substrate temperature range (17 ° C. or more and less than 21 ° C.).
Further, the temperature of the lift pins used for supporting the substrate in the first substrate temperature range is 23 ° C., the temperature of the lift pins used for supporting the substrate in the second substrate temperature range is 21 ° C., and the substrate is supported in the third substrate temperature range. The temperature of the lift pin used was 17 ° C.

In the experiment, a resist-coated substrate was carried in and dried under reduced pressure as in the above embodiment, while the substrate temperature range was detected while monitoring the atmospheric pressure in the chamber, and the lift pins supporting the substrate were switched.
And the contact part with the lift pin in the board | substrate carried out after the reduced pressure drying process was observed, and it was verified whether transfer generate | occur | produced. As a result, transfer of lift pins was not confirmed.
As a result of the above examples, it was confirmed that the transfer of the pins supporting the substrate can be prevented according to the reduced pressure drying apparatus of the present invention.

FIG. 1 is a plan view of a coating and developing treatment system including a reduced pressure drying apparatus according to the present invention. FIG. 2 is a flowchart showing a substrate processing flow of the coating and developing processing system of FIG. FIG. 3 is a plan view showing an overall configuration of a coating process section provided in the coating and developing treatment system of FIG. FIG. 4 is a plan view of a vacuum drying unit provided in the coating process section of FIG. FIG. 5 is a cross-sectional view of the vacuum drying unit. FIG. 6 is a partially enlarged sectional view of the vacuum drying unit. FIG. 7 is a table schematically showing a conversion table used for pin elevation control. FIG. 8 is a flow showing the operation of the vacuum drying unit. FIG. 9 is a lift pin operation transition diagram in the vacuum drying unit. FIG. 10 is a cross-sectional view showing a schematic configuration of a conventional vacuum drying unit. FIG. 11 is a graph showing a depressurization transition curve in the chamber used in the example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Application | coating development system 30 Application | coating process part 46 Low pressure drying unit (low pressure drying apparatus)
104 Roller transport path 106 Chamber 126 Lift mechanism (lift pin lifting / lowering means)
128 Lift pin 128a Pin body 128b Pin tip 129 Pin unit 133 Control device (control means, substrate temperature range detection means)
133a Storage unit (storage means)
135 Barometric pressure sensor (barometric pressure detection means)
142 Vacuum exhaust system (pressure reduction means)
G substrate

Claims (4)

A reduced-pressure drying apparatus that performs a reduced-pressure drying process of the processing liquid on a substrate to be processed coated with a processing liquid to form a coating film,
A chamber for accommodating the substrate to be processed;
Pressure reducing means for reducing the pressure in the chamber;
A plurality of lift pins arranged in the chamber and supporting the substrate to be processed from below;
A plurality of the lift pins as one unit, a pin unit provided with a plurality of the units,
Lift pin lifting means for lifting and lowering the lift pins in each unit independently;
Each lift pin in one unit is adjusted to a different specific temperature, and each lift pin in the other unit is adjusted to a specific temperature that is the same as the specific temperature of each lift pin in the one unit. Lift pin temperature control means,
Control means for performing drive control of the lift pin lifting means;
A substrate temperature range detecting means for detecting a temperature of the substrate that changes with the reduced-pressure drying process as a predetermined temperature range from a plurality of preset temperature ranges ;
With
The specific temperature of each lift pin in each unit that is temperature-controlled by the lift pin temperature adjusting means is a temperature included in any one of the plurality of preset temperature ranges, and for each lift pin Set to a temperature within a different temperature range,
The control means is a lift pin disposed in each unit that is temperature-controlled at a specific temperature included in the temperature range detected by the substrate temperature range detection means, and the lift pin raising / lowering means supports the substrate to be processed. Drive control,
And with the temperature change of the substrate due to the reduced-pressure drying process, the substrate to be processed is supported by the lift pins arranged in the respective units adjusted to different specific temperatures, and the lift pins arranged in the respective units and the A reduced-pressure drying apparatus characterized by sequentially switching contact points with a substrate. An atmospheric pressure detection means for detecting the atmospheric pressure in the chamber; and a storage means for recording a conversion table indicating a correlation between the atmospheric pressure in the chamber and the substrate temperature range,
The substrate temperature range detection unit refers to the conversion table based on the atmospheric pressure in the chamber detected by the atmospheric pressure detection unit, and outputs a predetermined temperature range as a detection result. Vacuum drying equipment. Substrate temperature detecting means for detecting the temperature of the substrate to be processed disposed in the chamber, and storage means for recording a conversion table for sorting the substrate temperature detected by the substrate temperature detecting means into a predetermined substrate temperature range. ,
2. The decompression according to claim 1, wherein the substrate temperature range detection means refers to the conversion table based on the substrate temperature detected by the substrate temperature detection means, and outputs a predetermined temperature range as a detection result. Drying equipment. A storage unit that records a conversion table indicating a correlation between the elapsed time of the reduced-pressure drying process and the substrate temperature range;
2. The reduced-pressure drying apparatus according to claim 1, wherein the substrate temperature range detection unit refers to the conversion table based on an elapsed time of the reduced-pressure drying process and outputs a predetermined temperature range as a detection result.

Images