201007872 六、發明說明 【發明所屬之技術領域】 本發明是有關爲了在微影（Photolithography)工程中 形成塗佈膜，而於減壓環境下對被塗佈處理液的被處理基 板實施乾燥處理的減壓乾燥裝置。 【先前技術】 參 例如在FPD ( Flat Panel Display )的製造中，是藉由 所謂的微影工程來形成電路圖案，亦即對玻璃基板等的被 處理基板形成預定的膜之後，塗佈處理液的光阻劑（ Photoresist)(以下稱爲阻劑）而形成阻劑膜，對應於電 路圖案來將阻劑膜曝光，予以進行顯像處理。 在上述阻劑膜的形成工程中，往基板的阻劑塗佈後， 進行藉由減壓來使塗佈膜乾燥的減壓乾燥處理。 以往，進行如此的減壓乾燥處理的裝置，例如有圖10 ❹ 的剖面圖所示之揭示於專利文獻1的減壓乾燥單元。 圖1〇所示的減壓乾燥處理單元是下部腔室61與上部 ，腔室62貼緊而於內部形成處理空間。在該處理空間設有 用以載置被處理基板的平台63。在平台63設有用以載置 基板G的複數個固定銷66。 在此減壓乾燥處理單元中，一旦被處理面塗佈阻劑的 基板G搬入，則基板G會隔著固定銷66來載置於平台63 上。 其次’上部腔室62會貼緊於下部腔室61，基板G是 -5- 201007872 形成放置於氣密狀態的處理空間內的狀態。 其次，處理空間內的環境會從排氣口 64排氣，成爲 預定的減壓環境。藉由此減壓狀態維持預定時間，阻劑液 中的稀釋劑等溶劑會某程度蒸發，阻劑液中的溶劑會慢慢 地放出，不使阻劑受到不良影響的情形下促進阻劑的乾燥 〔專利文獻1〕特開2000-181079號公報201007872 6. Technical Field [Technical Field] The present invention relates to drying a substrate to be treated with a coating liquid under a reduced pressure environment in order to form a coating film in a photolithography project. Dry the device under reduced pressure. [Prior Art] For example, in the manufacture of FPD (Flat Panel Display), a circuit pattern is formed by a so-called lithography process, that is, a predetermined film is formed on a substrate to be processed such as a glass substrate, and then the treatment liquid is applied. A photoresist (hereinafter referred to as a resist) forms a resist film, and the resist film is exposed in response to a circuit pattern to perform development processing. In the formation process of the above-mentioned resist film, after the resist coating of the substrate, a vacuum drying treatment for drying the coating film by pressure reduction is performed. In the conventional apparatus for performing such a reduced-pressure drying treatment, for example, the vacuum drying unit disclosed in Patent Document 1 is shown in the cross-sectional view of Fig. 10 . The vacuum drying processing unit shown in Fig. 1A is a lower chamber 61 and an upper portion, and the chamber 62 is in close contact with each other to form a processing space therein. A stage 63 for placing a substrate to be processed is provided in the processing space. The platform 63 is provided with a plurality of fixing pins 66 for placing the substrate G. In the vacuum drying processing unit, when the substrate G on which the resist is coated is applied, the substrate G is placed on the stage 63 via the fixing pin 66. Next, the upper chamber 62 is in close contact with the lower chamber 61, and the substrate G is -5 - 201007872 in a state of being placed in the processing space in an airtight state. Second, the environment within the processing space is vented from the exhaust port 64 to a predetermined reduced pressure environment. By maintaining the reduced pressure state for a predetermined period of time, the solvent such as a diluent in the resist liquid evaporates to some extent, the solvent in the resist liquid is slowly released, and the resist is promoted without adversely affecting the resist. Drying [Patent Document 1] JP-A-2000-181079
【發明內容】 (發明所欲解決的課題） 可是，以往此減壓乾燥處理是一旦藉由固定銷來支持 基板，此固定銷的接觸部的形狀會轉印於基板，因此大多 採用以銷來支持畫素配置的區域外，迴避轉印的影響之手 段。SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, in the conventional vacuum drying treatment, when a substrate is supported by a fixing pin, the shape of the contact portion of the fixing pin is transferred to the substrate, and therefore, a pin is often used. A means of avoiding the effects of transfer outside the area where the pixel configuration is supported.
然而，近年來，面取形狀多樣化，無法支持畫素區域 外的課題、或隨著螢幕尺寸大型化，即使以固定銷來支持 畫素區域以外，也會有彎曲變大，使阻劑乾燥處理受到不 良影響的其他課題發生。 因此，爲了解決該等課題，被要求必須在畫素區域內 以銷支持，即使是該情形照樣可防止銷的轉印之技術。 另外，在上述專利文獻1所揭示的減壓乾燥處理中， 是在阻劑塗佈處理後調整平台63的溫度，以不會使基板 G蒙受溫度變化的方式進行控制，藉此抑制固定銷66轉 印至基板G。 -6- 201007872 然而，專利文獻1所揭示的方法是實施對基板0的減 壓乾燥處理的期間，藉由銷來支持基板G的同一處’因此 接觸於銷之處與不接觸之處，阻劑的乾燥速度會產生差異 ，恐有發生銷的轉印之虞。 又，即使基板G的溫度不變化，支持基板G的銷的 溫度也會隨著腔室內的減壓而慢慢地降低，銷與基板G的 溫度差會擴大，而恐有發生轉印之虞。 φ 本發明是有鑑於上述那樣的情事而硏發者，其目的是 在於提供一種對被塗佈處理液的被處理基板進行上述處理 液的乾燥處理，形成塗佈膜的基板處理裝置中，可防止支 持被處理基板的銷轉印至基板之基板處理裝置。 (用以解決課題的手段） 爲了解決上述的課題，本發明的減壓乾燥裝置，係對 被塗佈處理液的被處理基板進行上述處理液的減壓乾燥處 φ 理，形成塗佈膜之減壓乾燥裝置，其特徵係具備： 腔室，其係收容上述被處理基板； _ 減壓手段，其係將上述腔室內減壓； 複數的升降銷，其係配列於上述腔室內，從下方來支 持上述被處理基板； 升降銷升降手段，其係將複數根的上述升降銷設爲群 組單位，使各群組內的升降銷分別獨立升降； 基板溫度範圍檢出手段，其係將隨著減壓乾燥處理而 變化的上述基板的溫度分段成預定的溫度範圍來檢測出； 201007872 升降銷溫調手段，其係對上述群組內的各升降銷，將 該銷之與上述基板的接觸部設定成藉由上述基板溫度範圍 檢出手段所檢測出的溫度範圍所分別含的預定溫度；及 控制手段，其係進行上述升降銷升降手段的驅動控制 9 上述控制手段係根據藉由上述基板溫度範圍檢出手段 所檢測出的溫度範圍，以被溫調成該溫度範圍所含的預定 溫度之上述升降銷來支持上述被處理基板的方式進行上述 ^ 鬱 升降銷升降手段的驅動控制。 藉由如此的構成，支持被處理基板的升降銷會以能夠 成爲被調整成近似於基板溫度的溫度的銷之方式進行轉換 控制，隨著該轉換，升降銷與基板的接觸處會轉換。 亦即，即使減壓乾燥處理之間、腔室內的氣壓或溫度 變化，還是可經常藉由被溫調成與基板溫度大致相同的溫 度的升降銷來支持基板，且無基板的同一處長時間升降銷 接觸的情形。因此，可極力縮小升降銷對基板的影響’可 ❹ 防止支持基板的升降銷轉印至基板。 又，最好具備： 氣壓檢出手段，其係檢測出上述腔室內的氣壓； 記憶手段，其係記錄顯示上述腔室內的氣壓與上 板溫度範圍的相關關係的變換表， 上述基板溫度範圍檢出手段係根據上述氣壓檢出手& 所檢測出的腔室內的氣壓，參照上述變換表’以預定的$ 度範圍作爲檢出結果輸出。 -8- 201007872 根據藉由如此的構成所檢測出的氣壓，可容易輸出基 板溫度範圍。 或，亦可具備： 基板溫度檢出手段，其係檢測出被配置於上述腔室內 的被處理基板的溫度；及 記憶手段，其係記錄將藉由上述基板溫度檢出手段所 檢測出的基板溫度區分成預定的基板溫度範圍的變換表， φ 上述基板溫度範圍檢出手段係根據上述基板溫度檢出 手段所檢測出的基板溫度，參照上述變換表，以預定的溫 度範圍作爲檢出結果輸出。 根據藉由如此的構成所檢測出的基板溫度，可容易輸 出基板溫度範圍。 或，亦可具備記憶手段，其係記錄顯示減壓乾燥處理 的經過時間與上述基板溫度範圍的相關關係的變換表， 上述基板溫度範圍檢出手段係根據減壓乾燥處理的經 • 過時間，參照上述變換表，以預定的溫度範圍作爲檢出結 果輸出。 藉由如此的構成，可根據減壓乾燥處理的經過時間， 容易輸出基板溫度範圍。 〔發明的效果〕 若根據本發明，則可取得一種對被塗佈處理液的被處 理基板進行上述處理液的乾燥處理，形成塗佈膜的基板處 理裝置中，可防止支持被處理基板的銷轉印至基板之基板 -9- 201007872 處理裝置。 【實施方式】 以下，根據圖面來說明有關本發明的實施形態。圖1 是具備本發明的減壓乾燥裝置之塗佈顯像處理系統的平面 圖。 此塗佈顯像處理系統10是被設置於無塵室內，例如 將LCD用的玻璃基板設爲被處理基板，在LCD製造過程 中進行微影工程中的洗淨、阻劑塗佈、預烘烤、顯像及後 烘烤等一連串的處理者。曝光處理是以鄰接於此系統設置 的外部的曝光裝置12來進行。 塗佈顯像處理系統10是在中心部配置橫長的製程站 (P/S) 16，在其長度方向（X方向）兩端部設置卡匣站 (C/S ) 14 及介面站（I/F ) 18。 卡匣站（C/S) 14是搬出入卡匣C的埠，該卡匣C是 以能夠多段地堆起基板G的方式收容複數片，卡匣站（ C/S ) 14是具備：在水平的一方向（Y方向）可排列載置 至4個卡匣C的卡匣平台20、及對於該平台20上的卡匣 C進行基板G的搬出入的搬送機構22。搬送機構22是具 有可保持基板G的手段，例如搬送臂22a，可以X，Y，Z ，Θ的4軸來動作，而使能夠與鄰接的製程站（P/S) 16 側進行基板G的交接。 製程站（P/S) 16是在延伸於水平的系統長度方向（ X方向）之平行且逆向的一對製程生產線A，B依製程流 -10- 201007872 程或工程的順序配置各處理部。 亦即，從卡匣站（C/S ) 14側往介面站（I/F ) 18側的 製程生產線A，是搬入單元（IN PASS ) 24、洗淨製程部 26、第1熱的處理部28、塗佈製程部30及第2熱的處理 部32會沿著第1平流搬送路34來從上游側依該順序配置 成一列。 更詳細是搬入單元（IN PASS) 24會從卡匣站（C/S φ ) 14的搬送機構22來接受未處理的基板G，以預定的節 奏來投入第1平流搬送路34。 在洗淨製程部26，沿著第1平流搬送路34從上游側 依序設有準分子UV照射單元（E-UV) 36及滌氣器洗淨 單元（SCR) 38。 在第1熱的處理部28，從上游側依序設有黏附（ adhesion)單元（AD) 40及冷卻單元（COL) 42。在塗佈 製程部30，從上游側依序設有阻劑塗佈單元（c〇T ) 44 及作爲本發明的減壓乾燥裝置的減壓乾燥單元（VD) 46 〇 在第2熱的處理部32從上游側設有預烘烤單元（ PRE-BAKE ) 48 及冷卻單元（COL ) 50。 在位於第2熱的處理部32的下游側旁之第1平流搬 送路34的終點設有通路單元（PASS) 52。 在第1平流搬送路34上平流搬送而來的基板G可由 此終點的通路單元（PASS) 52往介面站（I/F) 18交接。 另一方面，從介面站（I/F ) 1 8側往卡匣站（C/S ) 14 -11 - 201007872 側之下游部的製程生產線B，是顯像單元（DEV ) 54、後 烘烤單元（POST-BAKE) 56、冷卻單元（COL) 58、檢查 單元（AP) 60及搬出單元（OUT PASS) 62會沿著第2平 流搬送路64來從上游側依此順序配置成一列。 在此，後烘烤單元（POST-BAKE) 56及冷卻單元（ C0L) 58是構成第 3熱的處理部66。搬出單元（OUT PASS) 62會從第2平流搬送路64 —片一片地接受處理完 成的基板G，而交接至卡匣站（C/S) 14的搬送機構22。 並且，在兩製程生產線A，B之間設有輔助搬送空間 68，能以1片的單位水平載置基板G的梭子70可藉由未 圖示的驅動機構來雙向移動於製程生產線方向（X方向） 〇 而且，介面站（I/F) 18是具有用以進行上述第1及 第2平流搬送路34、64或鄰接的曝光裝置12與基板G的 互相交往之搬送裝置72，在該搬送裝置72的周圍配置旋 轉平台（R/S) 74及周邊裝置76。旋轉平台（R/S) 74是 使基板G旋轉於水平面內的平台，在與曝光裝置12的交 接時，用以變換長方形的基板G的方向。周邊裝置76是 例如將字幕機（TITLER)或周邊曝光裝置（EE)等連接 至第2平流搬送路64。 圖2是表示此塗佈顯像處理系統對1片的基板g之全 行程的處理程序。首先，在卡匣站（C/S) 14中，搬送機 構22會從平台20上的任一個卡匣C取出基板G，將該取 出的基板G搬入製程站（P/S ) 1 6的製程生產線.A側的搬 -12- 201007872 入單元（IN PASS) 24(圖2的步驟S1)。從搬入單元（ IN PASS) 24移載或投入基板G至第1平流搬送路34上 〇 被投入第1平流搬送路34的基板G是最初在洗淨製 程部26中藉由準分子UV單元（E-UV) 36及滌氣器洗淨 單元（SCR) 38來依序實施紫外線洗淨處理及滌氣洗淨處 理（圖2的步驟S2、S3 )。 φ 滌氣器洗淨單元（SCR) 38是對平流搬送路34上水 平移動的基板G實施刷洗淨或吹洗淨，藉此來從基板表面 除去粒子狀的污穢，然後實施洗滌處理，最後利用氣刀等 來使基板G乾燥。一旦完成滌氣器洗淨單元（SCR) 38之 一連串的洗淨處理，則基板G會就那樣下降第1平流搬送 路34而至第1熱的處理部28。 在第1熱的處理部28中，基板G是最初在黏附單元 (AD) 40實施利用蒸氣狀的HMDS的黏附處理，使被處 參 理面疏水化（圖2的步驟S4 )。此黏附處理終了後，基 板G是在冷卻單元（COL) 42被冷卻至預定的基板溫度（ 圖2的步驟S5)。此後，基板G亦下降第1平流搬送路 34而往塗佈製程部30搬入。 在塗佈製程部30中，基板G最初在阻劑塗佈單元（ COT) 44維持平流藉由使用細縫噴嘴（Slit nozzle)的非 旋轉法（spinless)來對基板上面（被處理面）塗佈阻劑 液，緊接著，在下游側旁的減壓乾燥單元（VD) 46接受 利用減壓之常溫的乾燥處理（圖2的步驟S6)。 -13- 201007872 出塗佈製程部30的基板G是下降第1平流搬送路34 而至第2熱的處理部32。在第2熱的處理部32中，基板 G最初是在預供烤單元（PRE-BAKE) 48接受預烘烤作爲 阻劑塗佈後的熱處理或曝光前的熱處理（圖2的步驟S7 )° 藉由此預烘烤，在基板G上的阻劑膜中所殘留的溶劑 會被蒸發除去，阻劑膜對基板的密合性會被強化。其次， 基板G是在冷卻單元（COL) 50被冷卻至預定的基板溫度 (圖2的步驟S8)。然後，基板G會從第1平流搬送路 34的終點的通路單元（PASS) 52退出至介面站（I/F) 18 的搬送裝置72。 在介面站（I/F) 18中，基板G是在旋轉平台74例如 接受90度的方向轉換來搬入至周邊裝置76的周邊曝光裝 置（EE)，在此接受用以顯像時除去附著於基板G的周 邊部的阻劑之曝光後，送往相鄰的曝光裝置12(圖2的步 驟 S9)。 曝光裝置12是對基板G上的阻劑曝光預定的電路圖 案。然後，一旦完成圖案曝光的基板G從曝光裝置12回 到介面站（I/F) 18，則首先搬入至周邊裝置76的字幕機 (TITLER )，在此對基板上的預定部位記錄預定的資訊 (圖2的步驟S10)。然後，基板G會藉由搬送裝置72 來搬入至製程站（P/S) 16的製程生產線B側所鋪設的第 2平流搬送路64的顯像單元（DEV ) 54的始點。 如此基板G將在第2平流搬送路64上往製程生產線 -14- 201007872 B的下游側搬送。在最初的顯像單元（DEV) 54中，基板 G是在平流搬送的期間實施顯像、洗滌、乾燥之一連串的 顯像處理（圖2的步驟S 1 1 )。 在顯像單元（DEV ) 54完成一連串的顯像處理的基板 G是原封不動地載於第2平流搬送路64來依序通過第3 熱的處理部66及檢查單元（AP) 60。在第3熱的處理部 66中，基板G是最初在後烘烤單元（POST-BAKE) 56接 φ 受作爲顯像處理後的熱處理之後烘烤（圖2的步驟S12) 〇 藉由此後烘烤，在基板G的阻劑膜所殘存的顯像液或 洗淨液會被蒸發而除去，阻劑圖案對基板的密合性會被強 化。其次，基板G是在冷卻單元（COL) 58被冷卻至預定 的基板溫度（圖2的步驟S13)。在檢査單元（AP) 60是 針對基板G上的阻劑圖案來進行非接觸的線寬檢査或膜質 •膜厚檢查等（圖2的步驟S14)。 搬出單元（OUT PASS) 62是從第2平流搬送路64接 受完成全工程的處理而來的基板G，交給卡匣站（C/S) 14的搬送機構22。在卡匣站（C/S ) 14側，搬送機構22 會將從搬出單元（OUT PASS) 62接到之處理完成的基板 G收容於任一個（通常是原來）的卡匣c (圖2的步驟 S 1 5 )。 在此塗佈顯像處理系統10中，可將本發明的減壓乾 燥裝置適用於塗佈製程30內的減壓乾燥單元（VD) 46。 接著’根據圖3〜圖6來說明本發明的較佳實施形態 -15- 201007872 的塗佈製程部30內的減壓乾燥單元（VD) 46的構成及作 用。 圖3是表示塗佈製程部30的全體構成的平面圖。又 ，圖4〜圖6是表示減壓乾燥單元（VD) 46的構成，圖4 是其平面圖，圖5是其剖面圖，圖6是其部份擴大剖面圖 ❹ 在圖3中，阻劑塗佈單元（COT) 44是具有：構成第 1平流搬送路34(圖1)的一部分或一區間的浮上式的平 台80、及將此平台80上浮在空中的基板G搬送於平台長 度方向（X方向）的基板搬送機構82、及對平台80上所 被搬送的基板G上面供給阻劑液的阻劑噴嘴84、及在塗 佈處理的空閒時間更新阻劑噴嘴84的噴嘴更新部86。However, in recent years, the shape of the surface is diversified, and it is impossible to support the problem outside the pixel area, or as the size of the screen is increased, even if the pixel is supported by the fixed pin, the curvature is increased and the resist is dried. Handling other problems that are adversely affected. Therefore, in order to solve such problems, it is required to be supported by pins in the pixel area, and even in this case, the technique of preventing pin transfer can be prevented. Further, in the vacuum drying treatment disclosed in Patent Document 1, the temperature of the stage 63 is adjusted after the resist coating treatment, and the substrate G is controlled so as not to be subjected to temperature change, thereby suppressing the fixing pin 66. Transfer to the substrate G. -6- 201007872 However, the method disclosed in Patent Document 1 is to support the same portion of the substrate G by the pin during the period of performing the vacuum drying process on the substrate 0. Therefore, it is in contact with the pin where it is not in contact with the pin. There is a difference in the drying speed of the agent, and there is a fear that the transfer of the pin will occur. Further, even if the temperature of the substrate G does not change, the temperature of the pin of the support substrate G gradually decreases with the pressure reduction in the chamber, and the temperature difference between the pin and the substrate G increases, and the transfer may occur. . φ The present invention has been made in view of the above-described circumstances, and an object of the invention is to provide a substrate processing apparatus for forming a coating film by performing a drying treatment on the substrate to be processed of the coating liquid to be processed. A substrate processing apparatus that supports transfer of a pin supporting the substrate to be processed to the substrate is prevented. (Means for Solving the Problem) In order to solve the above-described problems, the vacuum drying apparatus of the present invention performs a vacuum drying of the treatment liquid on the substrate to be treated to which the treatment liquid is applied to form a coating film. a vacuum drying apparatus characterized by comprising: a chamber for accommodating the substrate to be processed; _ a pressure reducing means for decompressing the chamber; and a plurality of lifting pins arranged in the chamber from below To support the substrate to be processed; the lifting pin lifting and lowering means, wherein the plurality of lifting pins are set as a group unit, so that the lifting pins in each group are independently raised and lowered; and the substrate temperature range detecting means is The temperature of the substrate changed by the decompression drying process is segmented into a predetermined temperature range to be detected; 201007872 the lifting pin temperature adjustment means is for each of the lifting pins in the group, and the pin is opposite to the substrate The contact portion is set to a predetermined temperature respectively included in a temperature range detected by the substrate temperature range detecting means; and a control means for performing the lift pin lifter Driving control of the segment 9 The control means supports the substrate to be processed by the lifting pin which is temperature-tuned to a predetermined temperature included in the temperature range based on the temperature range detected by the substrate temperature range detecting means. In the manner of driving control of the above-mentioned lifting and lowering pin lifting means. With such a configuration, the lift pin supporting the substrate to be processed is converted and controlled so as to be a pin that can be adjusted to a temperature close to the substrate temperature, and the contact between the lift pin and the substrate is switched in accordance with the conversion. That is, even if the air pressure or temperature in the chamber changes between the vacuum drying treatments, the substrate can be often supported by the lift pins that are temperature-adjusted to a temperature substantially the same as the substrate temperature, and the same portion of the substrate is not long. The situation in which the lift pins are in contact. Therefore, the influence of the lift pins on the substrate can be minimized. 可 The lift pins of the support substrate can be prevented from being transferred to the substrate. Further, it is preferable to include: a gas pressure detecting means for detecting a gas pressure in the chamber; and a memory means for recording a conversion table indicating a correlation between a gas pressure in the chamber and a temperature range of the upper plate, wherein the substrate temperature range is detected The means for outputting the air pressure in the chamber detected by the air pressure detecting hand & is outputted with reference to the above-described conversion table as a detection result with a predetermined range of $ degrees. -8- 201007872 According to the air pressure detected by such a configuration, the temperature range of the substrate can be easily output. Alternatively, the substrate temperature detecting means may detect the temperature of the substrate to be processed disposed in the chamber, and the memory means for recording the substrate detected by the substrate temperature detecting means The temperature is divided into a conversion table of a predetermined substrate temperature range. φ The substrate temperature range detecting means outputs the predetermined temperature range as a detection result by referring to the conversion table based on the substrate temperature detected by the substrate temperature detecting means. . According to the substrate temperature detected by such a configuration, the substrate temperature range can be easily output. Alternatively, a memory means for recording a correlation table showing a correlation between an elapsed time of the reduced-pressure drying process and the substrate temperature range, wherein the substrate temperature range detecting means is based on the elapsed time of the reduced-pressure drying process, Referring to the above-described conversion table, a predetermined temperature range is output as a detection result. With such a configuration, it is possible to easily output the substrate temperature range in accordance with the elapsed time of the reduced-pressure drying treatment. [Effects of the Invention] According to the present invention, it is possible to obtain a pin for supporting a substrate to be processed in a substrate processing apparatus for forming a coating film by performing a drying process on the substrate to be processed to be processed. Substrate transferred to the substrate -9- 201007872 Processing unit. [Embodiment] Hereinafter, embodiments of the present invention will be described based on the drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a coating development processing system including a vacuum drying apparatus of the present invention. The coating development processing system 10 is installed in a clean room, for example, a glass substrate for LCD is used as a substrate to be processed, and is subjected to lithography, resist coating, and pre-bake in the LCD manufacturing process. A series of processors such as baking, developing and post-baking. The exposure processing is performed by an exposure device 12 disposed adjacent to the outside of the system. The coating development processing system 10 is a horizontally long process station (P/S) 16 disposed at the center portion, and has a card station (C/S) 14 and an interface station at both ends in the longitudinal direction (X direction). /F) 18. The cassette station (C/S) 14 is a cassette that carries in and out of the cassette C. The cassette C accommodates a plurality of sheets so that the substrate G can be stacked in multiple stages, and the cassette station (C/S) 14 is provided with: In the horizontal direction (Y direction), the cassette platform 20 placed on the four cassettes C and the transport mechanism 22 for carrying in and out the substrate G on the cassette C on the stage 20 can be arranged. The transport mechanism 22 is a means for holding the substrate G. For example, the transport arm 22a can operate on four axes of X, Y, Z, and ,, and can perform the substrate G with the adjacent process station (P/S) 16 side. Handover. The process station (P/S) 16 is a pair of process lines A and B which are parallel and reversed in the length direction (X direction) of the system extending in the horizontal direction, and each processing unit is arranged in the order of process flow -10- 201007872. That is, the process line A from the side of the card station (C/S) 14 to the interface station (I/F) 18 is the loading unit (IN PASS) 24, the cleaning process unit 26, and the first heat processing unit. 28. The coating process unit 30 and the second heat processing unit 32 are arranged in a row from the upstream side along the first advancing transport path 34. More specifically, the loading unit (IN PASS) 24 receives the unprocessed substrate G from the transport mechanism 22 of the cassette station (C/S φ ) 14 and inputs the first traverse transport path 34 with a predetermined rhythm. In the cleaning processing unit 26, an excimer UV irradiation unit (E-UV) 36 and a scrubber cleaning unit (SCR) 38 are sequentially provided from the upstream side along the first advection conveying path 34. In the first heat processing unit 28, an adhesion unit (AD) 40 and a cooling unit (COL) 42 are sequentially provided from the upstream side. In the coating process unit 30, a resist coating unit (c〇T) 44 and a vacuum drying unit (VD) 46 which is the vacuum drying apparatus of the present invention are sequentially disposed from the upstream side, and the second heat treatment is performed. The portion 32 is provided with a pre-baking unit (PR-BAKE) 48 and a cooling unit (COL) 50 from the upstream side. A passage unit (PASS) 52 is provided at the end of the first advection conveying path 34 located on the downstream side of the processing unit 32 of the second heat. The substrate G that has been transported advancingly on the first advancing transport path 34 can be transferred to the interface station (I/F) 18 by the access unit (PASS) 52 at the end point. On the other hand, the process line B from the interface station (I/F) 18 side to the downstream side of the card station (C/S) 14 -11 - 201007872 is the developing unit (DEV) 54 and post-baking. The unit (POST-BAKE) 56, the cooling unit (COL) 58, the inspection unit (AP) 60, and the unloading unit (OUT PASS) 62 are arranged in a row from the upstream side in this order along the second advancing conveying path 64. Here, the post-baking unit (POST-BAKE) 56 and the cooling unit (C0L) 58 are processing units 66 constituting the third heat. The carry-out unit (OUT PASS) 62 receives the processed substrate G one by one from the second advancing transport path 64, and delivers it to the transport mechanism 22 of the cassette station (C/S) 14. Further, an auxiliary transfer space 68 is provided between the two process lines A and B, and the shuttle 70 on which the substrate G can be placed in one unit can be bidirectionally moved in the direction of the process line by a drive mechanism (not shown) (X) In addition, the interface station (I/F) 18 is a transport device 72 that performs mutual communication between the first and second convective transport paths 34 and 64 or the adjacent exposure device 12 and the substrate G. A rotating platform (R/S) 74 and a peripheral device 76 are disposed around the device 72. The rotary table (R/S) 74 is a platform for rotating the substrate G in the horizontal plane, and is used to change the direction of the rectangular substrate G when it is placed on the exposure device 12. The peripheral device 76 is, for example, a captioning machine (TITLER) or a peripheral exposure device (EE) or the like connected to the second advancing conveying path 64. Fig. 2 is a view showing a processing procedure of the entire stroke of the substrate g of the one sheet of the coating development processing system. First, in the cassette station (C/S) 14, the transport mechanism 22 takes out the substrate G from any of the cassettes C on the stage 20, and carries the taken-out substrate G into the process of the processing station (P/S) 16 Production line.A side of the moving-12- 201007872 into the unit (IN PASS) 24 (step S1 of Figure 2). The substrate G that has been transferred from the loading unit (IN PASS) 24 to the substrate G to the first convective transport path 34 and that has been loaded into the first accommodating transport path 34 is initially made of an excimer UV unit in the cleaning process unit 26 ( E-UV) 36 and a scrubber cleaning unit (SCR) 38 are sequentially subjected to ultraviolet cleaning treatment and scrubbing treatment (steps S2 and S3 in Fig. 2). The φ scrubber cleaning unit (SCR) 38 performs brush cleaning or purging on the substrate G horizontally moving on the advancing conveying path 34, thereby removing particulate contamination from the surface of the substrate, and then performing washing treatment, and finally The substrate G is dried by an air knife or the like. When a series of cleaning processes of the scrubber cleaning unit (SCR) 38 are completed, the substrate G is lowered by the first advancing transport path 34 to the first heat processing unit 28. In the first heat processing unit 28, the substrate G is first adhered to the adhesion unit (AD) 40 by a vapor-like HMDS, and the surface to be treated is hydrophobized (step S4 in Fig. 2). After the end of the adhesion process, the substrate G is cooled to a predetermined substrate temperature in the cooling unit (COL) 42 (step S5 of Fig. 2). Thereafter, the substrate G is also lowered by the first advancing transport path 34 and carried into the coating process unit 30. In the coating process portion 30, the substrate G is initially maintained in a flat flow in the resist coating unit (COT) 44 by coating the upper surface of the substrate (the processed surface) by using a spinless nozzle (spinless). Immediately thereafter, the depressurization drying unit (VD) 46 on the downstream side receives drying treatment at room temperature by decompression (step S6 of Fig. 2). -13- 201007872 The substrate G of the coating processing unit 30 is the processing unit 32 that lowers the first advancing conveying path 34 to the second heat. In the second heat processing unit 32, the substrate G is initially subjected to heat treatment before the pre-baking as a resist coating or heat treatment before the exposure in the pre-bake unit (PRE-BAKE) 48 (step S7 of FIG. 2). By this prebaking, the solvent remaining in the resist film on the substrate G is removed by evaporation, and the adhesion of the resist film to the substrate is enhanced. Next, the substrate G is cooled to a predetermined substrate temperature in the cooling unit (COL) 50 (step S8 of Fig. 2). Then, the substrate G is withdrawn from the passage unit (PASS) 52 at the end of the first advection conveying path 34 to the conveying device 72 of the interface station (I/F) 18. In the interface station (I/F) 18, the substrate G is a peripheral exposure device (EE) that is transferred to the peripheral device 76 at a rotation stage 74, for example, in a direction of 90 degrees, and is removed from the peripheral exposure device (EE) for receiving the image. After exposure of the resist of the peripheral portion of the substrate G, it is sent to the adjacent exposure device 12 (step S9 of Fig. 2). The exposure device 12 is a predetermined circuit pattern for exposing the resist on the substrate G. Then, once the substrate G on which the pattern exposure is completed is returned from the exposure device 12 to the interface station (I/F) 18, it is first carried into the captioning machine (TITLER) of the peripheral device 76, where predetermined information is recorded on a predetermined portion on the substrate. (Step S10 of Fig. 2). Then, the substrate G is carried into the starting point of the developing unit (DEV) 54 of the second advancing conveying path 64 laid on the side of the process line B of the process station (P/S) 16 by the conveying device 72. Thus, the substrate G is transported to the downstream side of the process line -14 - 201007872 B on the second advancing path 64. In the first developing unit (DEV) 54, the substrate G is subjected to development processing of a series of development, washing, and drying during the advection conveyance (step S1 1 in Fig. 2). The substrate G that has completed the series of development processing in the developing unit (DEV) 54 is the processing unit 66 and the inspection unit (AP) 60 that sequentially pass the third heat, which are carried in the second advancing conveying path 64 as they are. In the third heat processing unit 66, the substrate G is first baked after the heat treatment after the post-baking unit (POST-BAKE) 56 is subjected to the development processing (step S12 of FIG. 2). After baking, the developer liquid or the cleaning liquid remaining on the resist film of the substrate G is removed by evaporation, and the adhesion of the resist pattern to the substrate is enhanced. Next, the substrate G is cooled to a predetermined substrate temperature at the cooling unit (COL) 58 (step S13 of Fig. 2). The inspection unit (AP) 60 performs a non-contact line width inspection or a film quality/film thickness inspection or the like for the resist pattern on the substrate G (step S14 of Fig. 2). The carry-out unit (OUT PASS) 62 is a substrate G that has been subjected to the process of completing the entire process from the second advancing transport path 64, and is delivered to the transport mechanism 22 of the cassette station (C/S) 14. On the side of the cassette station (C/S) 14, the transport mechanism 22 accommodates the substrate G that has been processed from the carry-out unit (OUT PASS) 62 in any one (usually the original) cassette c (Fig. 2 Step S 1 5 ). In the coating development processing system 10, the vacuum drying apparatus of the present invention can be applied to a vacuum drying unit (VD) 46 in the coating process 30. Next, the configuration and function of the reduced-pressure drying unit (VD) 46 in the coating process unit 30 of the preferred embodiment -15-201007872 of the preferred embodiment of the present invention will be described with reference to Figs. 3 to 6 . FIG. 3 is a plan view showing the overall configuration of the coating process unit 30. 4 to 6 are views showing a configuration of a reduced-pressure drying unit (VD) 46, FIG. 4 is a plan view thereof, FIG. 5 is a cross-sectional view thereof, and FIG. 6 is a partially enlarged sectional view thereof. FIG. The coating unit (COT) 44 has a floating type platform 80 that constitutes a part or a section of the first advection conveying path 34 (FIG. 1), and a substrate G that floats the platform 80 in the air in the longitudinal direction of the platform ( The substrate transfer mechanism 82 in the X direction), the resist nozzle 84 that supplies the resist liquid to the upper surface of the substrate G transported on the stage 80, and the nozzle update unit 86 that updates the resist nozzle 84 during the idle time of the coating process.
在平台80的上面設有將預定的氣體（例如空氣）噴 射至上方的多數個氣體噴射口 88，可藉由從該等的氣體噴 出口 88噴出的氣體壓力來使基板G從平台上面浮上一定 的高度。 基板搬送機構82是具備：夾著平台80來延伸於X方 向的一對導軌90A、90B、及可沿著該等導軌90A，90B來 往復移動的滑塊92、及以能夠在平台80上可裝卸地保持 基板G的兩側端部之方式設於滑塊92的吸附墊等的基板 保持構件（未圖示），藉由直進移動機構（未圖示）來使 滑塊92移動於搬送方向（X方向），藉此構成可在平台 80上進行基板G的浮上搬送。 阻劑噴嘴84是在平台80的上方橫渡於與搬送方向（ -16- 201007872 χ方向）正交的水平方向（γ方向）延伸的長型噴嘴，可 在預定的塗佈位置對通過其正下方的基板G上面藉由細縫 狀的吐出口來帶狀地吐出阻劑液。並且，阻劑噴嘴84是 構成可與支持此噴嘴的噴嘴支持構件94 一體移動於X方 向，且可升降於Ζ方向，可在上述塗佈位置與噴嘴更新部 8 6之間移動。 噴嘴更新部86是在平台80上方的預定位置保持於支 ϋ 柱構件96，具備：作爲塗佈處理的預先準備，使阻劑液從 阻劑噴嘴84吐出的打底（priming )處理部98、及用以除 去附著於阻劑噴嘴84的阻劑吐出口附近的阻劑之噴嘴洗 淨機構102。 在如此構成的阻劑塗佈單元（COT) 44中，首先，藉 由前段的第1熱的處理部28例如以滾子搬送所送來的基 板G會被搬入至設定於平台80上的前端側的搬入部，在 此待機的滑塊92會保持基板G而接收。在平台80上基板 • G是接受由氣體噴射口 88所噴射的氣體（空氣）的壓力 來以大致水平的姿勢保持浮上狀態。 然後，滑塊92會一邊保持基板G —邊往減壓乾燥單 元（VD) 46側移動於搬送方向（X方向），當基板G通 過阻劑噴嘴84的下面時，阻劑噴嘴84會朝基板G的上面 帶狀地吐出阻劑液，藉此可在基板G上從基板前端往後端 鋪設地毯般地將阻劑液的液膜形成於一面。 如此被塗佈阻劑液的基板G，之後也藉由滑塊92在 平台80上浮上搬送，超過平台80的後端後轉乘於後述的 -17- 201007872 滾子搬送路104，在此利用滑塊92的保持會被解除。轉乘 於滾子搬送路104的基板G，從此先如後述般在滾子搬送 路104上以滾子搬送來移動，搬入至後段的減壓乾燥單元 (VD ) 46。 其次，詳細說明有關本發明的減壓乾燥裝置的減壓乾 燥單元（VD) 46。 如圖3所示，在阻劑塗佈單元（COT) 44的平台80 的延長上（下游側）鋪設有構成第1平流搬送路34的一 部分或一區間的滾子搬送路104。此滾子搬送路104是在 減壓乾燥單元（VD) 46的腔室106之中及外（前後）連 續鋪設。 更詳細，此減壓乾燥單元（VD) 46的滾子搬送路 104是由：鋪設於腔室106的搬送上游側亦即搬入側的搬 入側滾子搬送路l〇4a、及鋪設於腔室106內的內部滾子搬 送路1 〇4b、及鋪設於腔室1 06的搬送下游側亦即搬出側的 搬出側滾子搬送路l〇4c所構成。 各滾子搬送路l〇4a、104b、104c是藉由各獨立或共 通的搬送驅動部來使各個以適當的間隔配置於搬送方向（ X方向）的複數個滾子l〇8a、108b、108c旋轉，而使能 夠以滾子搬送基板G於搬送方向（X方向）。在此，搬入 側滾子搬送路l〇4a是接受從阻劑塗佈單元（COT) 44的 平台80以浮上搬送的延長所搬出的基板G，藉滾子搬送 來送入減壓乾燥單元（VD) 46的腔室106內之機能。 內部滾子搬送路l〇4b是具有以同速度的滾子搬送來 201007872 將從搬入側滾子搬送路l〇4a以滾子搬送所送來的基板G 引入至腔室106內，且將腔室1〇6內減壓乾燥處理完成的 基板G以滾子搬送來送出至腔室1〇6外的機能。搬出側滾 子搬送路l〇4c是具有以和從腔室106內的內部滾子搬送 路104b中送出來的處理完成的基板G同速度的滚子搬送 抽出，送至後段的處理部（第2熱的處理部32)的機能。 如圖3〜圖5所示，減壓乾燥單元（VD) 46的腔室 φ 106是形成比較偏平的長方體，具有其中可水平收容基板 G的空間。在此腔室106的搬送方向（X方向）彼此相向 的一對（上游側及下游側）的腔室側壁分別設有形成基板 G剛好可平流通過的大小之細縫狀的搬入口 110及搬出口 112。而且，用以開閉該等的搬入口 110及搬出口 112的 閘機構114，116會被安裝於腔室106的外壁。另外，腔 室106的上面部是形成可拆卸於維修用。 在腔室106內，構成內部滾子搬送部l〇4b的滾子 ❿ l〇8b是在對應於搬出入口 110、112的高度位置，取適當 的間隔來一列配置於搬送方向（X方向），一部分或全部 的滾子108b會經由適當的傳動機構來連接至設於腔室1〇6 外的馬達等的旋轉驅動源120。 如圖4所示’各滾子l〇8b是構成以外徑一樣的圓筒 部或圓柱部來接觸於基板G的背面之棒體，其兩端部可旋 轉地被腔室106的左右兩側壁或設於其附近的軸承（未圖 示）所支持。傳動機構的旋轉軸122所貫通之腔室106的 外壁部分是以密封構件124來密封。 -19- 201007872 又，如圖5所示，此減壓乾燥單元（VD) 46是具備 用以在腔室106內大致水平支撐基板G而上升下降的複數 個升峰銷128。複數的升降銷128是在腔室106內以預定 的配置圖案配列，各升降銷128可藉由分別對應的升降機 構126(升降銷升降手段）來升降於鉛直方向。升降機構 126是例如使用汽缸驅動或滾珠螺桿（ball screw)驅動方 式。 更詳細是如圖4、圖5所示，在相鄰接的2根滾子 1 〇8b間的間隙，沿著基板搬送方向（X方向），複數根， 此實施形態是3根的升降銷128會配置成可分別升降於鉛 直方向。 並且，藉由該等3根的升降銷128來構成作爲1個群 組的銷單元129。上述銷單元129是例如圖4所示，在X 方向及Y方向分別排列有複數單元（圖是各7單元），藉 此，在腔室106內，升降銷128會形成矩陣狀配列的狀態 〇 各升降銷128是如圖5所示具有藉由升降機構126來 升降動作的直線棒狀的銷本體128a、及從該銷本體128a 的上端突出至鉛直上方的銷尖端部128b。 銷本體128a是構成例如不鏽鋼（SUS)所構成的剛體 的中空管。又，銷尖端部128b是例如藉由 PEEK ( polyetheretherketone;聚酸酸酮）等的樹脂所形成，形成 非常細前端成圓的形狀’可構成對基板G以極小面積來點 接觸支持。 -20- 201007872 又，銷本體128a是經由密封構件134來對腔室106 的底壁氣密貫通，且如上述般可藉由升降機構126來升降 〇 又，各升降銷128是例如圖6所示，在銷尖端部128b 內具備致冷元件（Peltier device) 131，對此致冷元件131 藉由電流供給控制手段132來供給預定的電流，以銷尖端 部128b能夠形成預定的溫度之方式進行調整（亦即，藉 φ 由致冷元件131及電流供給控制手段132來構成升降銷溫 調手段）。 具體而言，構成各銷單元129的3根升降銷128的銷 尖端部128b是被設定成各個相異的溫度。例如，將3根 的升降銷128如圖6所示，分別設爲銷A、銷B、銷C， 則銷A是與玻璃基板G的初期溫度同2 3 °C，銷B是較低 的2PC，銷C是更低的17°C，控制成維持各個的溫度。 並且，各銷單元129的升降銷128是分別獨立的升降 • 驅動控制，因此在各銷單元129中，可控制成3根的升降 銷128的任一根突出至上方來支持玻璃基板G。 亦即，全銷單元129的各銷A、或銷B、或銷C (升 降銷128相當），所分別對應的升降機構126會被執行以 同一時序來使對升降銷128的同一行程（stroke)的前進 (上昇）或後退（下降）驅動一起進行的控制。此時，各 銷A、或銷B、或銷C，可使銷尖端端的高度一致，如圖 5所示般，在銷尖端端比滾子搬送路l〇4b更低的下降位置 、及銷尖端端比滾子搬送路l〇4b更高的上昇位置之間， 201007872 升降移動。 而且，在腔室106的底壁形成有1處或複數處的排氣 口 138。在該等的排氣口 138是經由排氣管140來連接真 空排氣裝置M2 (減壓手段）。各真空排氣裝置142是具 有用以將腔室106內從大氣壓狀態抽真空而維持預定的真 空度的減壓狀態之真空泵（未圖示）。另外，爲了使該等 複數的真空排氣裝置142的排氣能力的偏差平均化，亦可 使用排氣管（未圖示）來聯繫各個的排氣管140彼此間。 並且，在腔室106內的兩端部，亦即接近搬入口 110 及搬出口 112，比滾子搬送路104b更低的位置，設有延伸 於Y方向的圓筒狀的氮氣體噴出部144。該等的氮氣體噴 出部144是例如由燒結金屬粉末而成的多孔質的中空管所 構成，經由配管146 (圖4)來連接至氮氣體供給源（未 圖示）。在減壓乾燥處理的終了後，腔室106會從管的全 周面噴出氮氣體。 而且，在腔室106內的大致中央，設有用以檢測出室 內的環境壓之氣壓感測器135(氣壓檢出手段）。此氣壓 感測器135是例如可使用膜片壓力計（diaphragm gauge) ，其係根據靜電容（electrostatic capacity)的變化來檢測 出膜片（隔膜）的變形，求取壓力。 並且，在減壓乾燥單元（VD) 46設有進行其動作控 制之由電腦及記憶裝置等所構成的控制裝置1 3 3 (控制手 段），可根據所被實行的電腦程式來對閘機構114、116、 旋轉驅動源120、各銷單元129的升降機構126、真空排 201007872 氣裝置142、電流供給控制手段132等各個進行驅動控制 〇 又，藉由上述氣壓感測器135所檢測出的信號是被輸 出至上述控制裝置133，控制裝置133可根據所被檢測出 的腔室室內的壓力，來驅動控制各銷單元129的升降機構 126 〇 詳細，控制裝置133是參照預先記錄於所具備的記憶 φ 部133a (記憶手段）之顯示腔室室內的壓力與基板G的 溫度（溫度範圍）的相關之變換表，轉換被溫調成各個相 異的溫度之升降銷128。 舉具體的例子，在控制裝置133內的記憶部133a中 ，記錄有根據事前的測定之變換表T(參照圖7)，其內 容係「腔室106內的氣壓從大氣壓減壓至53088.5Pa的期 間，基板G的溫度是位於第一基板溫度範圍（例如23 °C以 上25°C未滿），腔室106內的氣壓從53088.4Pa減壓至 φ 293.9Pa的期間，基板G的溫度是位於第二基板溫度範圍 (例如2PC以上23°C未滿），腔室1〇6內的氣壓從 293.8Pa減壓至19.5 Pa的期間，基板G的溫度是位於第三 基板溫度範圍（例如1 7 t以上2 1°C未滿）」。 控制裝置133是具有作爲基板溫度範圍檢出手段的機 能，根據藉由上述氣壓感測器135所檢測出的腔室106內 的氣壓値，參照記錄於上述記憶部133a的變換表T，檢 測出該時的基板G的基板溫度範圍。 然後，控制裝置133會在各銷單元129中進行控制’ -23- 201007872 而使能夠藉由被溫調成含於上述檢測出的基板溫度範圍的 預定溫度的銷A(23°C)、銷B(21°C)、銷C(17°C)的 其中任一個升降銷128來支持基板G。 接著，根據圖8的流程及圖9的升降銷動作遷移圖來 說明有關此減壓乾燥單元（VD) 46的動作。 在上游的阻劑塗佈單元（COT ) 44塗佈阻劑液的基板 G是藉由平流搬送來從平台80上的浮上搬送路移載至搬 入側滾子搬送路l〇4a上。 然後，基板G是在搬入側滾子搬送路l〇4a上以滾子 搬送移動，在減壓乾燥單元（VD) 46的腔室106之中， 從其搬入口 11〇進入（圖8的步驟ST1)。此時，藉由閘 機構114，搬入口 110是成開啓的狀態。 內部滾子搬送路l〇4b亦藉由旋轉驅動源120的旋轉 驅動，進行與搬入側滾子搬送路l〇4a的滾子搬送動作合 時序的同一搬送速度的滾子搬送動作，如圖5所示，將從 搬入口 110進入的基板G以滾子搬送來引入至腔室106內 部。此時，全部的升降機構126是使在全部的升降銷128 的各銷尖端端比內部滾子搬送路l〇4b的搬送面更低的下 降位置待機。 然後，一旦基板G到達腔室106內的大致中心的位置 ，則於此內部滾子搬送路l〇4b的滾子搬送動作會停止。 同時或之前搬入側滾子搬送路l〇4a的滾子搬送動作也可 停止。 如此一來，在阻劑塗佈單元（COT ) 44被塗佈阻劑液 201007872 而來的基板G會藉由搬入側滾子搬送路l〇4a及內部滾子 搬送路104b上的連續性的滾子搬送來搬入至減壓乾燥單 元（VD) 46的腔室106。緊接著，閘機構114、116會作 動，分別關閉至今開啓的搬入口 11〇及搬出口 Π2，密閉 腔室1 06。 另一方面，一旦腔室106被密閉，則真空排氣裝置 142會作動，將腔室106內真空排氣至預定的真空度（圖 U 8的步驟ST2)。如此一來，在腔室106內，基板G會被 放置於減壓環境中，藉此基板G上的阻劑液膜會在常溫下 效率佳適度地乾燥。 並且，藉由氣壓感測器135所檢測出的電氣信號會經 常被輸入至控制裝置133,在控制裝置133開始腔室106 內的氣壓監控，根據所被檢測出的氣壓値，檢測出該時的 基板G溫度作爲預定的基板溫度範圍（圖8的步驟ST3) 。另外，上述基板溫度範圍是例如第--第三的3個基板 φ 溫度範圍的其中之一，第一基板溫度範圍是包含所被搬入 的基板G的初期溫度，例如23t以上25 °C未滿，第二基 板溫度範圍是更低，例如2 1 °C以上2 3 t未滿，第三基板溫 度範圍是例如17°C以上21°C未滿。 又，藉由圖6所示的電流供給控制手段132，在全部 的銷單元129的各升降銷128中，對銷尖端部128b的致 冷元件13 1供給預定的電流，以銷尖端部128b能夠成爲 每個銷A〜C所被預先設定的預定溫度之方式調整（圖8 的步驟ST4)。具體而言，例如相當於銷a的升降銷128 -25- 201007872 會被設定於上述第一基板溫度範圍（包含所被搬入的基板 G的初期溫度）所含的2 3 °C，相當於銷B的升降銷128會 被設定於更低溫的上述第二基板溫度範圍所含的21 °C，相 當於銷C的升降銷128會被設定於更低溫的上述第三基板 溫度範圍所含的17°C。 其次，根據在控制裝置133中所被實行的電腦程式的 預定算法來進行升降銷128的升降控制。 亦即，在全部的銷單元129中，3根的升降銷128( 銷A、銷B、銷C)之中，相當於被設定於近似所被搬入 的基板G的初期溫度的231之銷A的升降銷128的升降 機構126會驅動。然後，以該銷尖端端能夠超過內部滾子 搬送路104b的搬送面的預定高度位置之方式，銷本體 128a僅預定的行程（stroke)上昇。 藉此，基板G會從內部滾子搬送路104b保持水平姿 勢，移載至相當於銷A的升降銷128的銷尖端部12 8b， 如圖9(a)所示，就那樣往內部滾子搬送路104b的上方 舉起（圖8的步驟ST5 )。 此時，接觸於基板G的銷尖端部12 8b是以極小面積 來接觸於基板G，被設定成與基板G的溫度（約23t)大 致相同，因此不會有銷尖端部128b的痕跡轉印至基板G 的情形。 在此，若減壓乾燥處理進行，腔室室內的氣壓減壓， 而下降至第一氣壓（例如53 088.4Pa)，則控制裝置132 判斷基板溫度移至上述第二基板溫度範圍（圖8的步驟 -26- 201007872 ST6 )。 然後，在全部的銷單元129中’驅動相當於被調溫成 上述第二基板溫度範圍所含的21°C的銷B之升降銷128, 使該銷尖端端上昇至超過內部滾子搬送路104b的搬送面 的預定高度位置。並且，與銷B的銷尖端部128b到達該 預定的高度位置同時，使銷A的銷尖端部128b下降。 藉此，支持基板G的升降銷128，如圖9(b)所示’ φ 從銷A轉換成銷B (圖8的步驟ST7)。此時’接觸於基 板G的銷尖端部12 8b是以極小面積在與銷A相異之處接 觸於基板G，被設定成與隨著腔室內的減壓而溫度降低的 基板G溫度（約21 °C)大致相同，因此不會有銷尖端部 1 2 8b的痕跡轉印至基板G的情形。 又，若減壓乾燥處理進行，腔室室內下降至第二氣壓 (例如293.8Pa)，則控制裝置132判斷基板溫度移至上 述第三基板溫度範圍（圖8的步驟ST8)。 〇 然後，在全部的銷單元129中，驅動相當於被溫調成 上述第三基板溫度範圍所含的17°C的銷C之升降銷128, 使該銷尖端端上昇至超過內部滾子搬送路104b的搬送面 的預定高度位置。並且，與銷C的銷尖端部12 8b到達其 預定的高度位置同時，使銷B的銷尖端部12 8b下降。 藉此，支持基板G的升降銷128，如圖9(c)所示， 從銷B轉換成銷C (圖8的步驟ST9)。此時，接觸於基 板G的銷尖端部128b是以極小面積在與銷B相異之處接 觸於基板G，被設定成隨著腔室內的減壓而溫度降低的基 -27- 201007872 板G溫度（約17C)大致相同，因此不會有彳 128b的痕跡轉印至基板G的情形。 又’若減壓乾燥處理進行，腔室室內下降至 (例如1 9 · 5 P a )，則控制裝置1 3 3判斷減壓乾燥 ’使真空排氣裝置142的排氣動作停止（圖； ST10)。取而代之，氮氣體噴出部144會對腔室 入氮氣體。然後，室內的壓力上昇至大氣壓之後 114，116會作動而開啓搬入口 11〇及搬出口 112 前後，控制裝置132是在全部的銷單元129 相當於銷C的升降銷128的升降機構126，使該 下降至比內部滾子搬送路l〇4b的搬送面更下方 機位置的高度位置。藉由此升降機構126的下降 板G是以水平姿勢從升降銷128的銷尖端移載至 搬送路l〇4b。 然後，緊接著在內部滾子搬送路104b及搬 搬送路104c上開始滾子搬送動作，剛接受減壓 板G會從搬出口 112搬出至滾子搬送，就那樣以 後段的第2熱的處理部32 (圖8的步驟ST1 1 )。 另外，亦可與該處理完成基板G的搬出動作 自阻劑塗佈單元（COT) 44的後續基板G藉由搬 搬送路l〇4a及內部滾子搬送路104b上的連續性 送來從搬入口 110搬入至腔室106內。A plurality of gas injection ports 88 for spraying a predetermined gas (for example, air) onto the upper surface of the stage 80 are provided, and the substrate G can be floated from the platform by the gas pressure ejected from the gas ejection ports 88. the height of. The substrate transfer mechanism 82 includes a pair of guide rails 90A and 90B extending in the X direction with the platform 80 interposed therebetween, and a slider 92 that can reciprocate along the guide rails 90A and 90B, and can be mounted on the platform 80. A substrate holding member (not shown) such as a suction pad of the slider 92 is detachably attached to both end portions of the substrate G, and the slider 92 is moved in the transport direction by a linear motion mechanism (not shown). In the (X direction), the floating transport of the substrate G can be performed on the stage 80. The resist nozzle 84 is a long nozzle that extends across the stage 80 in a horizontal direction (γ direction) orthogonal to the transport direction (−16-201007872 χ direction), and can pass right below the predetermined application position. On the upper surface of the substrate G, a resist liquid is discharged in a strip shape by a slit-shaped discharge port. Further, the resist nozzle 84 is configured to be movable integrally with the nozzle supporting member 94 that supports the nozzle in the X direction, and is movable in the Ζ direction, and is movable between the coating position and the nozzle updating portion 86. The nozzle updating unit 86 is held by the support column member 96 at a predetermined position above the stage 80, and includes a priming processing unit 98 that prepares the coating liquid in advance, and discharges the resist liquid from the resist nozzle 84, And a nozzle cleaning mechanism 102 for removing a resist attached to the vicinity of the resist discharge port of the resist nozzle 84. In the resist application unit (COT) 44 configured as described above, first, the substrate G sent by the first heat processing unit 28 in the front stage, for example, by the roller conveyance, is carried into the front end set on the stage 80. The slider 92 on the side holds the substrate G and receives it. On the stage 80, the substrate • G receives the pressure of the gas (air) injected from the gas injection port 88 to maintain the floating state in a substantially horizontal posture. Then, the slider 92 moves to the transport direction (X direction) toward the decompression drying unit (VD) 46 side while holding the substrate G, and when the substrate G passes under the resist nozzle 84, the resist nozzle 84 faces the substrate. The resist liquid is discharged in a strip shape on the upper surface of G, whereby the liquid film of the resist liquid can be formed on one side of the substrate G from the front end of the substrate to the rear end. The substrate G to which the resist liquid is applied is then floated on the stage 80 by the slider 92, and is passed over the rear end of the stage 80, and then transferred to the -17-201007872 roller transport path 104, which will be described later, and used here. The holding of the slider 92 is released. The substrate G that has been transferred to the roller transport path 104 is transported by roller transport on the roller transport path 104 as will be described later, and is carried into the decompression drying unit (VD) 46 in the subsequent stage. Next, the vacuum drying unit (VD) 46 of the vacuum drying apparatus of the present invention will be described in detail. As shown in Fig. 3, a roller transport path 104 constituting a part or a section of the first advection transport path 34 is laid on the extension (downstream side) of the stage 80 of the resist coating unit (COT) 44. This roller transport path 104 is continuously laid in and outside (front and rear) in the chamber 106 of the reduced-pressure drying unit (VD) 46. More specifically, the roller transport path 104 of the reduced-pressure drying unit (VD) 46 is placed on the transport-side upstream side of the chamber 106, that is, the carry-in side roller transport path 10a, which is placed on the transport side, and is placed in the chamber. The internal roller transport path 1 〇 4b in the 106 and the carry-out side roller transport path 10 4c which is placed on the transport downstream side of the chamber 106, that is, the carry-out side. Each of the roller transport paths 10a, 104b, and 104c is a plurality of rollers 10a, 108b, and 108c that are disposed in the transport direction (X direction) at appropriate intervals by independent or common transport drive units. By rotating, it is possible to convey the substrate G in the conveyance direction (X direction) by the roller. Here, the carry-in side roller transport path 10a is a substrate G that is carried out by the extension of the floating conveyance from the platform 80 of the resist application unit (COT) 44, and is transported by a roller to be sent to the decompression drying unit ( The function within the chamber 106 of the VD) 46. The internal roller transport path 10b is transported by the same speed roller 201007872. The substrate G fed from the carry-in side roller transport path 10a is transported into the chamber 106 by the roller transport, and the cavity is introduced into the chamber 106. The substrate G which has been subjected to the vacuum drying treatment in the chamber 1〇6 is conveyed by a roller to be sent out to the outside of the chamber 1〇6. The carry-out side roller transport path 10b is transported to the downstream stage by the roller transporting at the same speed as the substrate G which has been processed from the internal roller transport path 104b in the chamber 106. 2 The function of the heat treatment unit 32). As shown in Figs. 3 to 5, the chamber φ 106 of the reduced-pressure drying unit (VD) 46 is a rectangular parallelepiped having a relatively flat shape, and has a space in which the substrate G can be horizontally accommodated. In the pair of (upstream side and downstream side) side walls of the chamber 106 in the transport direction (X direction), the side walls of the chambers are formed with a slit-shaped transfer port 110 which is formed so that the substrate G can flow advancingly. Exit 112. Further, the shutter mechanisms 114, 116 for opening and closing the transfer port 110 and the transfer port 112 are attached to the outer wall of the chamber 106. In addition, the upper surface portion of the chamber 106 is formed to be detachable for maintenance. In the chamber 106, the rollers ❿8〇8b constituting the internal roller transporting unit 104b are disposed in the transport direction (X direction) in a row at an appropriate interval in accordance with the height positions of the carry-out ports 110 and 112. Some or all of the rollers 108b are connected to a rotary drive source 120 of a motor or the like provided outside the chambers 1 to 6 via a suitable transmission mechanism. As shown in Fig. 4, each of the rollers 8 8b is a rod body which is formed by a cylindrical portion or a cylindrical portion having the same outer diameter to contact the back surface of the substrate G, and both end portions thereof are rotatably rotatably supported by the left and right side walls of the chamber 106. Or supported by bearings (not shown) located nearby. The outer wall portion of the chamber 106 through which the rotating shaft 122 of the transmission mechanism passes is sealed by a sealing member 124. -19- 201007872 Further, as shown in Fig. 5, the reduced-pressure drying unit (VD) 46 is provided with a plurality of peak pins 128 for raising and lowering the substrate G substantially horizontally in the chamber 106. The plurality of lift pins 128 are arranged in a predetermined arrangement pattern in the chamber 106, and each of the lift pins 128 can be raised and lowered in the vertical direction by the corresponding lift mechanism 126 (lifting pin lifting means). The lifting mechanism 126 is, for example, a cylinder drive or a ball screw drive method. More specifically, as shown in FIG. 4 and FIG. 5, the gap between the adjacent two rollers 1 〇 8b is plural along the substrate transport direction (X direction), and this embodiment is three lift pins. 128 will be configured to be raised and lowered in the vertical direction. Further, the pin units 129 as one group are constituted by the three lift pins 128. As shown in FIG. 4, for example, as shown in FIG. 4, the pin unit 129 has a plurality of cells (each of which is 7 cells) arranged in the X direction and the Y direction, whereby the lift pins 128 are arranged in a matrix in the chamber 106. Each of the lift pins 128 has a linear rod-shaped pin body 128a that is moved up and down by the lift mechanism 126 as shown in Fig. 5, and a pin tip end portion 128b that protrudes upward from the upper end of the pin body 128a. The pin main body 128a is a hollow tube constituting a rigid body made of, for example, stainless steel (SUS). Further, the pin tip end portion 128b is formed of a resin such as PEEK (polyetheretherketone; polyacid ketone), and has a shape in which a very thin tip end is formed in a circle, and the substrate G can be contact-supported with a small area on a very small area. -20- 201007872 Further, the pin body 128a is airtightly passed through the bottom wall of the chamber 106 via the sealing member 134, and can be lifted and lowered by the lifting mechanism 126 as described above, and each of the lifting pins 128 is, for example, FIG. In the pin tip portion 128b, a cooling element (Peltier device) 131 is provided, and the cooling element 131 is supplied with a predetermined current by the current supply control means 132, and is adjusted so that the pin tip portion 128b can form a predetermined temperature. (That is, the hoisting element is configured by the chilling element 131 and the current supply control means 132). Specifically, the pin tip end portions 128b of the three lift pins 128 constituting each pin unit 129 are set to have mutually different temperatures. For example, as shown in FIG. 6, the three lift pins 128 are respectively referred to as a pin A, a pin B, and a pin C, and the pin A is at the same temperature as the initial temperature of the glass substrate G at 23 ° C, and the pin B is lower. 2PC, pin C is a lower 17 ° C, controlled to maintain each temperature. Further, since the lift pins 128 of the pin units 129 are independently lifted and driven, the pin units 129 can be controlled so that any one of the three lift pins 128 protrudes upward to support the glass substrate G. That is, each pin A, or pin B, or pin C of the all-pin unit 129 (corresponding to the lift pin 128), the corresponding lift mechanism 126 is executed to perform the same stroke on the lift pin 128 at the same timing (stroke The forward (rise) or backward (down) drive controls that are performed together. At this time, each pin A, or pin B, or pin C can make the height of the tip end of the pin uniform, as shown in Fig. 5, at the lower end of the pin end than the roller transport path l4b, and the pin The tip end is moved higher than the roller position of the roller transport path l〇4b, 201007872. Further, one or more exhaust ports 138 are formed in the bottom wall of the chamber 106. At the exhaust port 138, the vacuum exhaust unit M2 (decompression means) is connected via the exhaust pipe 140. Each of the vacuum exhausting means 142 is a vacuum pump (not shown) having a reduced pressure state for evacuating the inside of the chamber 106 from the atmospheric pressure to maintain a predetermined degree of vacuum. Further, in order to average the deviation of the exhaust capability of the plurality of vacuum exhaust devices 142, an exhaust pipe (not shown) may be used to contact the respective exhaust pipes 140. Further, at both end portions in the chamber 106, that is, near the transfer inlet 110 and the transfer port 112, a cylindrical nitrogen gas discharge portion 144 extending in the Y direction is provided at a position lower than the roller transfer path 104b. . The nitrogen gas ejecting portion 144 is made of, for example, a porous hollow tube made of sintered metal powder, and is connected to a nitrogen gas supply source (not shown) via a pipe 146 (Fig. 4). After the end of the vacuum drying process, the chamber 106 will eject a nitrogen gas from the entire circumference of the tube. Further, a gas pressure sensor 135 (air pressure detecting means) for detecting the environmental pressure in the chamber is provided at substantially the center of the chamber 106. The air pressure sensor 135 is, for example, a diaphragm gauge which detects deformation of a diaphragm (diaphragm) based on a change in electrostatic capacity and obtains a pressure. Further, the decompression drying unit (VD) 46 is provided with a control device 133 (control means) including a computer and a memory device for controlling the operation thereof, and the shutter mechanism 114 can be operated based on the executed computer program. And 116, the rotary drive source 120, the lift mechanism 126 of each pin unit 129, the vacuum discharge 201007872 gas device 142, the current supply control means 132, and the like, each of which performs drive control, and the signal detected by the air pressure sensor 135 It is output to the control device 133. The control device 133 can drive and control the lifting mechanism 126 of each pin unit 129 based on the detected pressure in the chamber. The control device 133 is pre-recorded in the reference. A table in which the pressure in the display chamber of the memory φ portion 133a (memory means) is related to the temperature (temperature range) of the substrate G is converted, and the lift pins 128 which are temperature-adjusted to respective different temperatures are converted. As a specific example, in the memory unit 133a in the control device 133, a conversion table T (see FIG. 7) based on the previous measurement is recorded, and the content thereof is "the air pressure in the chamber 106 is decompressed from atmospheric pressure to 53088.5 Pa. During this period, the temperature of the substrate G is located in the first substrate temperature range (for example, 23 ° C or more and 25 ° C is not full), and the pressure in the chamber 106 is decompressed from 53088.4 Pa to φ 293.9 Pa, and the temperature of the substrate G is located. The second substrate temperature range (for example, 2PC or more and 23° C. is not full), the pressure in the chamber 1〇6 is reduced from 293.8Pa to 19.5 Pa, and the temperature of the substrate G is in the third substrate temperature range (for example, 17) t above 2 1 °C is not full)". The control device 133 has a function as a substrate temperature range detecting means, and detects the air pressure 腔 in the chamber 106 detected by the air pressure sensor 135 by referring to the conversion table T recorded in the memory unit 133a. The substrate temperature range of the substrate G at this time. Then, the control device 133 performs control ' -23 - 201007872 in each pin unit 129 to enable pin A (23 ° C) and pin which are temperature-adjusted to a predetermined temperature included in the above-mentioned detected substrate temperature range. Any one of the lift pins 128 of B (21 ° C) and pin C (17 ° C) supports the substrate G. Next, the operation of the decompression drying unit (VD) 46 will be described based on the flow of Fig. 8 and the lift pin operation transition diagram of Fig. 9. The substrate G coated with the resist liquid in the upstream resist coating unit (COT) 44 is transferred from the floating transport path on the stage 80 to the carry-in side roller transport path 104a by the advection transport. Then, the substrate G is transported by the roller on the carry-in side roller transport path 10a, and enters from the transfer port 11 in the chamber 106 of the decompression drying unit (VD) 46 (step of FIG. 8). ST1). At this time, the opening 110 is opened by the shutter mechanism 114. The internal roller transport path 104b is also driven by the rotation of the rotary drive source 120, and performs the roller transport operation at the same transport speed as the roller transport operation of the carry-in side roller transport path 104a, as shown in FIG. As shown, the substrate G entering from the carry-in port 110 is introduced into the interior of the chamber 106 by roller transport. At this time, all of the elevating mechanisms 126 stand by at the lowering positions of the pin end of all the lift pins 128 than the transfer faces of the inner roller transport path 104b. Then, when the substrate G reaches a substantially central position in the chamber 106, the roller transporting operation of the inner roller transport path 104b is stopped. At the same time or before, the roller transporting operation of the side roller transport path l〇4a can be stopped. As a result, the substrate G coated with the resist liquid (20107872) in the resist coating unit (COT) 44 is carried by the continuity of the side roller transport path 104a and the internal roller transport path 104b. The roller is transported to move into the chamber 106 of the reduced pressure drying unit (VD) 46. Immediately thereafter, the shutter mechanisms 114, 116 actuate to close the opening 11 and the opening Π 2 which have been opened so far, and close the chamber 106. On the other hand, once the chamber 106 is sealed, the vacuum exhaust unit 142 is actuated to evacuate the chamber 106 to a predetermined degree of vacuum (step ST2 of Fig. U8). As a result, in the chamber 106, the substrate G is placed in a reduced pressure environment, whereby the resist liquid film on the substrate G is dried moderately at a normal temperature. Further, the electrical signal detected by the air pressure sensor 135 is often input to the control device 133, and the control device 133 starts the air pressure monitoring in the chamber 106, and detects the time based on the detected air pressure 値. The substrate G temperature is set as a predetermined substrate temperature range (step ST3 of FIG. 8). Further, the substrate temperature range is, for example, one of the first to third third substrate φ temperature ranges, and the first substrate temperature range is an initial temperature including the substrate G to be carried in, for example, 23 t or more and 25 ° C is not full. The second substrate temperature range is lower, for example, 2 1 ° C or more and 2 3 t is not full, and the third substrate temperature range is, for example, 17 ° C or more and 21 ° C is not full. Further, the current supply control means 132 shown in Fig. 6 supplies a predetermined current to the cooling element 13 1 of the pin tip portion 128b in each of the lift pins 128 of the pin unit 129, so that the pin tip portion 128b can be used. It is adjusted so that each of the pins A to C is set to a predetermined temperature (step ST4 of Fig. 8). Specifically, for example, the lift pins 128 - 25 - 201007872 corresponding to the pin a are set at 23 ° C in the first substrate temperature range (including the initial temperature of the substrate G to be loaded), which is equivalent to the pin. The lift pin 128 of B is set at 21 ° C which is included in the temperature range of the second substrate which is lower in temperature, and the lift pin 128 corresponding to the pin C is set at a lower temperature temperature range of the third substrate. °C. Next, the raising and lowering control of the lift pins 128 is performed based on a predetermined algorithm of the computer program executed in the control device 133. In other words, among the three pin units 129, the three lift pins 128 (pin A, pin B, and pin C) correspond to the pin A set at 231 which is set to approximate the initial temperature of the substrate G to be loaded. The lifting mechanism 126 of the lift pin 128 is driven. Then, the pin body 128a rises only by a predetermined stroke so that the pin tip end can exceed the predetermined height position of the conveying surface of the inner roller conveying path 104b. Thereby, the substrate G is held in a horizontal posture from the internal roller transport path 104b, and is transferred to the pin tip end portion 128b of the lift pin 128 corresponding to the pin A, as shown in Fig. 9(a), as shown in Fig. 9(a). The upper side of the conveyance path 104b is lifted up (step ST5 of FIG. 8). At this time, the pin tip portion 12 8b contacting the substrate G is in contact with the substrate G with a very small area, and is set to be substantially the same as the temperature of the substrate G (about 23 t), so that the trace of the pin tip portion 128b is not transferred. To the case of the substrate G. Here, if the vacuum drying process is performed, the air pressure in the chamber is decompressed, and the pressure is lowered to the first air pressure (for example, 53 088.4 Pa), the control device 132 determines that the substrate temperature has moved to the second substrate temperature range (Fig. 8 Step -26- 201007872 ST6). Then, in all of the pin units 129, 'the lift pin 128 corresponding to the pin B that is temperature-controlled to 21 ° C included in the temperature range of the second substrate is driven to raise the pin tip end beyond the internal roller transport path The predetermined height position of the transport surface of 104b. Further, at the same time as the pin tip end portion 128b of the pin B reaches the predetermined height position, the pin tip end portion 128b of the pin A is lowered. Thereby, the lift pin 128 of the support substrate G is converted from the pin A to the pin B as shown in Fig. 9(b) (step ST7 of Fig. 8). At this time, the pin tip end portion 12 8b that is in contact with the substrate G is in contact with the substrate G at a position that is different from the pin A in a very small area, and is set to a temperature of the substrate G which is lowered in temperature as the pressure in the chamber is lowered. Since 21 ° C) is substantially the same, there is no case where the trace of the pin tip portion 1 28 b is transferred to the substrate G. When the vacuum drying process is performed and the chamber chamber is lowered to the second air pressure (e.g., 293.8 Pa), the control unit 132 determines that the substrate temperature has moved to the third substrate temperature range (step ST8 of Fig. 8). Then, in all of the pin units 129, the lift pin 128 corresponding to the pin C that is temperature-adjusted to 17 ° C included in the temperature range of the third substrate is driven, so that the pin tip end rises beyond the internal roller transport The predetermined height position of the conveying surface of the road 104b. Further, while the pin tip end portion 12 8b of the pin C reaches its predetermined height position, the pin tip end portion 12 8b of the pin B is lowered. Thereby, the lift pin 128 of the support substrate G is converted from the pin B to the pin C as shown in FIG. 9(c) (step ST9 of FIG. 8). At this time, the pin tip end portion 128b that is in contact with the substrate G is in contact with the substrate G at a position different from the pin B in a very small area, and is set to be a base -27-201007872 plate G which is lowered in temperature as the chamber is decompressed. Since the temperature (about 17 C) is substantially the same, there is no case where the trace of the crucible 128b is transferred to the substrate G. Further, if the vacuum drying process is performed and the chamber is lowered (for example, 1 9 · 5 P a ), the control device 13 3 judges that the vacuum drying is performed to stop the exhaust operation of the vacuum exhaust device 142 (Fig. ST10) ). Instead, the nitrogen gas ejecting portion 144 introduces a nitrogen gas into the chamber. Then, after the pressure in the room rises to the atmospheric pressure, 114, 116 is actuated to open the inlet 11 and the outlet 112, and the control device 132 is the lifting mechanism 126 corresponding to the lifting pin 128 of the pin C in all the pin units 129. This is lowered to a height position lower than the transport surface of the inner roller transport path 10b4b. The lowering plate G of the elevating mechanism 126 is transferred from the pin tip of the lift pin 128 to the transport path 10b in a horizontal posture. Then, the roller transport operation is started in the internal roller transport path 104b and the transport transport path 104c, and the pressure reduction plate G is immediately taken out from the carry-out port 112 to the roller transport, and the second heat processing in the subsequent stage is performed. Part 32 (step ST1 1 of Fig. 8). In addition, the subsequent substrate G of the self-resisting agent application unit (COT) 44 of the processing completion substrate G may be transported by the continuity of the transport path 104a and the internal roller transport path 104b. The port 110 is carried into the chamber 106.
若像以上那樣根據本發明的基板處理裝置的 ，則在減壓乾燥單元（VD ) 46中，支持基板G 瞎尖端部 第三氣壓 處理終了 S的步驟 1 〇 6內流 ，閘機構 〇 中，驅動 銷尖端端 的預定待 動作，基 內部滾子 出側滾子 處理的基 平流送至 同時，來 入側滾子 的滾子搬 實施形態 的升降銷 201007872 128會以能夠成爲被調整成近似於基板溫度的溫度的 方式進行轉換控制，隨著該轉換，升降銷128與基板 接觸處會轉換。 亦即，即使減壓乾燥處理之間、腔室內的氣壓或 變化，還是可經常藉由被溫調成與基板溫度大致相同 度的升降銷128來支持基板G，且無基板G的同一處 間升降銷128接觸的情形。因此，可極力縮小升降銷 φ 對基板G的影響，可防止升降銷128轉印至基板G。 另外，在上述實施形態中，是監控腔室106內的 ，根據預先記錄的氣壓與基板溫度範圍的相關關係（ 表）來轉換升降銷128，但亦可爲其他的方法，例如 室106內設置放射溫度計（基板溫度檢出手段），藉 接測定基板G的溫度，根據該測定溫度，參照變換表 情況用以將基板溫度區分成預定的基板溫度範圍者） 換升降銷128。 β 或，亦可根據預先記錄時間經過與基板溫度範圍 關關係之變換表，依時間經過來轉換升降銷128。 並且，在上述實施形態中，是藉由致冷元件131 流供給控制手段1 3 2來構成升降銷溫調手段，但並非 此，亦可使升降銷溫調手段構成爲藉由在銷尖端端 內流動溫水來溫調成預定溫度者。 〔實施例〕 接著，根據實施例更說明有關本發明的減壓乾燥 銷之 G的 溫度 的溫 長時 128 氣壓 變換 在腔 此直 (此 ，轉 的相 及電 限於 128b 裝置 -29- 201007872 。本實施例是使用上述實施形態所示構成的減壓乾燥裝置 ，實際進行實驗，藉此來檢證其效果。 首先，爲了設定使用於支持銷轉換控制的基板溫度範 圍，而進行以預定的排氣速度（流量）來將腔室內從大氣 壓減壓至減壓目標値（19.5Pa)的處理，求取腔室內的減 壓推移曲線。其結果，可取得圖11中圖表所示的結果。 在圖11中，橫軸是經過時間（sec)，縱軸是氣壓値（Pa )0 如圖11所示，從大氣壓（l〇〇〇〇〇〇Pa)到目標値（ 19.5Pa)的減壓推移，是在從大氣壓到53088.4Pa的期間 、從53088.4Pa到293_8Pa的期間、從293.8Pa到目標値 (19.5Pa)的期間，各個減壓梯度有所不同。 根據此結果，與上述實施形態同樣地，將腔室內的氣 壓爲大氣壓〜53088.4Pa的期間的基板溫度設爲第一基板 溫度範圍（23 °C以上 25 °C未滿），將腔室內的氣壓爲 53088.4Pa〜293.8Pa的期間的基板溫度設爲第二基板溫度 範圍（21°C以上23°C未滿），將腔室內的氣壓爲293.8Pa 〜19.5Pa的期間的基板溫度設爲第三基板溫度範圍（17°C 以上2 1 X：未滿）。 並且，在第一基板溫度範圍中，將使用於基板支持的 升降銷的溫度設爲2 3 °C，在第二基板溫度範圍中，將使用 於基板支持的升降銷的溫度設爲21°C，在第三基板溫度範 圍中，將使用於基板支持的升降銷的溫度設爲17 °C。 實驗是與上述實施形態同樣地搬入被塗佈阻劑的基板 -30- 201007872 ，而實施減壓乾燥處理，另一方，一邊監控腔室內的氣壓 ’一邊檢測出基板溫度範圍，轉換支持基板的升降銷。 然後，觀察減壓乾燥處理後所被搬出的基板之與升降 銷的接觸處，檢證是否發生轉印。其結果，未被確認出升 降銷的轉印。 以上的實施例的結果，可確認若利用本發明的減壓乾 燥裝置，則可防止支持基板之銷的轉印。 【圖式簡單說明】 圖1是具備本發明的減壓乾燥裝置之塗佈顯像處理系 統的平面圖。 圖2是表示圖1的塗佈顯像處理系統的基板處理的流 程的流程圖。 圖3是表示圖1的塗佈顯像處理系統所具備的塗佈製 程部的全體構成的平面圖。 圖4是圖3的塗佈製程部所具備的減壓乾燥單元的平 面圖。 圖5是減壓乾燥單元的剖面圖。 圖6是減壓乾燥單元的部分擴大剖面圖。 圖7是模式地表示使用於銷升降控制的變換表的表。 圖8是表示減壓乾燥單元的動作流程圖。 圖9是減壓乾燥單元的升降銷動作遷移圖。 圖是表示以往的減壓乾燥單元的槪略構成的剖面 圖。According to the substrate processing apparatus of the present invention as described above, in the vacuum drying unit (VD) 46, the step 1 〇6 of the third substrate pressure processing end S of the support substrate G 瞎 tip portion flows, and the gate mechanism , The tip end of the driving pin is scheduled to be moved, and the base roller of the base roller is processed by the side roller to be simultaneously sent, and the lifting pin 201007872 128 of the roller loading embodiment of the roller into the side roller can be adjusted to approximate the substrate. The temperature is controlled in such a manner that the lift pin 128 is switched at the point of contact with the substrate. That is, even if the air pressure or the change in the chamber between the vacuum drying treatments is changed, the substrate G can be often supported by the lift pins 128 that are temperature-adjusted to substantially the same temperature as the substrate, and the same portion of the substrate G is not present. The case where the lift pins 128 are in contact. Therefore, the influence of the lift pin φ on the substrate G can be minimized, and the lift pin 128 can be prevented from being transferred to the substrate G. Further, in the above embodiment, the lift pin 128 is switched in the monitoring chamber 106 based on the correlation (table) between the previously recorded air pressure and the substrate temperature range, but other methods such as setting in the chamber 106 may be employed. The radiation thermometer (substrate temperature detecting means) receives the lift pin 128 by taking the temperature of the measurement substrate G and referring to the conversion table to divide the substrate temperature into a predetermined substrate temperature range based on the measurement temperature.或 or, the lift pin 128 may be converted by time passage according to a conversion table in which the pre-recording time passes the relationship with the substrate temperature range. Further, in the above embodiment, the cooling element 131 is supplied with the control means 1 3 2 to constitute the lift pin temperature adjustment means. However, the lift pin temperature adjustment means may be configured to be at the pin tip end. The inside of the warm water to adjust the temperature to a predetermined temperature. [Embodiment] Next, according to the embodiment, the temperature of the G of the decompression drying pin of the present invention is changed to a temperature of 128 MPa in the cavity (the phase and electric power are limited to 128b device -29-201007872). In the present embodiment, the vacuum drying apparatus having the configuration described in the above embodiment is used, and an experiment is actually carried out to verify the effect. First, in order to set the temperature range of the substrate used for the support pin switching control, the predetermined row is performed. The gas velocity (flow rate) is used to reduce the pressure in the chamber from the atmospheric pressure to the pressure reduction target 値 (19.5 Pa), and the pressure reduction curve in the chamber is obtained. As a result, the results shown in the graph of Fig. 11 can be obtained. In Fig. 11, the horizontal axis is the elapsed time (sec), and the vertical axis is the barometric pressure (Pa). As shown in Fig. 11, the decompression from the atmospheric pressure (l〇〇〇〇〇〇Pa) to the target 値 (19. 5 Pa) is shown. In the period from atmospheric pressure to 53088.4 Pa, from 53088.4 Pa to 293_8 Pa, and from 293.8 Pa to target 値 (19.5 Pa), the respective pressure reduction gradients are different. Ground The substrate temperature during the period from atmospheric pressure to 53088.4 Pa in the room is set to the first substrate temperature range (23 ° C or more and 25 ° C is not full), and the substrate temperature during the period in which the gas pressure in the chamber is 53088.4 Pa to 293.8 Pa is set. The second substrate temperature range (21 ° C or more and 23 ° C is not full), and the substrate temperature during the period from 293.8 Pa to 19.5 Pa in the chamber is set to the third substrate temperature range (17 ° C or more 2 1 X: not Further, in the first substrate temperature range, the temperature of the lift pins used for the substrate support is set to 23 ° C, and in the second substrate temperature range, the temperature of the lift pins used for the substrate support is set to At 21 ° C, the temperature of the lift pin used for the substrate support was set to 17 ° C in the temperature range of the third substrate. In the experiment, the substrate to which the resist was applied was carried out in the same manner as in the above embodiment, and the substrate -30-201007872 was loaded. The vacuum drying process is performed, and the substrate temperature range is detected while monitoring the air pressure in the chamber, and the lift pins of the support substrate are switched. Then, the contact of the substrate carried out after the vacuum drying process with the lift pins is observed. It was confirmed whether or not transfer occurred. As a result, the transfer of the lift pins was not confirmed. As a result of the above examples, it was confirmed that the transfer of the pins of the support substrate can be prevented by the vacuum drying apparatus of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a coating development processing system including a vacuum drying apparatus according to the present invention. Fig. 2 is a flow chart showing a flow of substrate processing in the coating development processing system of Fig. 1. 3 is a plan view showing the overall configuration of a coating process unit included in the coating development processing system of FIG. 1 . Fig. 4 is a plan view showing a reduced-pressure drying unit provided in the coating process unit of Fig. 3; Figure 5 is a cross-sectional view of the reduced-pressure drying unit. Fig. 6 is a partially enlarged cross-sectional view showing the reduced-pressure drying unit. Fig. 7 is a table schematically showing a conversion table used for pin lifting control. Fig. 8 is a flow chart showing the operation of the reduced-pressure drying unit. Fig. 9 is a movement diagram of the lift pin movement of the reduced-pressure drying unit. The figure is a cross-sectional view showing a schematic configuration of a conventional vacuum drying unit.
201007872 圖11是表示在實施例所使用之腔室內的減壓推移曲 線的圖表。 【主要元件符號說明】 1〇:塗佈顯像處理系統 3〇 :塗佈製程部 46:減壓乾燥單元（減壓乾燥裝置） 104 :滾子搬送路 106 :腔室 126:升降機構（升降銷升降手段） 1 2 8 :升降銷 128a :銷本體 128b :銷尖端部 129 :銷單元 133:控制裝置（控制手段、基板溫度範圍檢出手段） 1 3 3 a :記憶部（記憶手段） 135:氣壓感測器（氣壓檢出手段） i 42:真空排氣裝置（減壓手段） G :基板 -32-201007872 Fig. 11 is a graph showing a pressure reduction transition curve in a chamber used in the embodiment. [Explanation of main component symbols] 1〇: Coating development processing system 3〇: Coating process unit 46: Decompression drying unit (decompression drying device) 104: Roller conveying path 106: Chamber 126: Lifting mechanism (lifting Pin lifting means 1 2 8 : Lifting pin 128a : Pin main body 128b : Pin tip part 129 : Pin unit 133 : Control device (control means, substrate temperature range detecting means) 1 3 3 a : Memory part (memory means) 135 : Barometric sensor (pneumatic detection means) i 42: Vacuum exhaust device (decompression means) G : Substrate - 32-