JP5208093B2 - Substrate processing apparatus, substrate processing method, and reduced pressure drying apparatus - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for forming a coating liquid film on a substrate to be processed by a spinless method and immediately drying the coating liquid film in a reduced-pressure atmosphere, and a reduced-pressure drying apparatus used for reduced-pressure drying processing. .

  In a photolithography process in a manufacturing process of a flat panel display (FPD) such as an LCD, a long slit nozzle having a slit-like discharge port is relatively scanned to form a resist solution on a substrate to be processed such as a glass substrate. A spinless coating method is often used.

  In this type of spinless coating method, for example, as disclosed in Patent Document 1, a minute gap is set between a substrate mounted on a horizontal mounting table and a discharge port of the slit nozzle, and the slit nozzle is Move in one direction parallel to the substrate surface, that is, horizontally. Then, the resist solution discharged in a strip shape from the slit nozzle extends flatly from the gap to the rear of the nozzle on the substrate. Thus, a coating film of the resist solution is formed from one end to the other end on the substrate in the moving direction of the slit nozzle.

  Further, as another form of the spinless coating method, for example, a levitation conveyance method as disclosed in Patent Document 2 is also known. In this method, the substrate is transported in a horizontal direction while floating in the air on the floating stage, and a resist solution is ejected in a strip shape toward the substrate passing directly below the slit nozzle disposed above the stage. A coating film of a resist solution is formed from one end to the other end on the substrate in the substrate transport direction.

  Further, in the manufacture of FPD panels, if a heat treatment that evaporates residual solvent in a resist coating film after applying a resist solution on a substrate in a photolithography process, that is, pre-baking, is performed immediately in the heat treatment unit. There is a problem that solvent evaporation becomes uneven due to thermal influence from lift pins, support pins, vacuum grooves or the like that come into contact with the substrate, and unevenness such as transfer marks appears in the resist coating film. Therefore, prior to pre-baking, the solvent remaining in the resist coating film on the substrate is volatilized to a certain stage under a reduced pressure atmosphere to form a hard layer (a kind of altered layer) on the surface of the resist coating film. Processing is performed (for example, Patent Document 3). Thus, according to the reduced pressure drying method in which only the surface layer portion is solidified while keeping the inside or bulk portion of the resist coating film in a liquid state, the flow of the bulk resist can be suppressed during pre-baking to reduce the occurrence of dry spots. In addition, it is possible to obtain an effect of increasing the resist resolution by reducing the insolubility or film loss of the resist during the development process.

JP-A-10-156255 JP-A-2005-244155 JP2000-181079

  In the reduced-pressure drying apparatus that performs the reduced-pressure drying process as described above, as the size of the FPD substrate increases, the volume of the chamber increases, and vacuuming is performed to reduce the pressure in the chamber to a desired vacuum pressure value. In addition to the increase in the required time, the amount of the resist coating film formed on the substrate has also increased, so the processing time required to volatilize the solvent in the coating film in a reduced-pressure atmosphere is also increased. This is a problem in terms of processing efficiency or tact.

  Further, in the spinless coating method in which the long slit nozzle is moved relative to the substrate as described above (coating scanning), the resist coating film is formed as if a carpet is laid from one end to the other end on the substrate. Is formed at a constant speed in one direction (coating scanning direction), a constant time difference (for example, about 30 seconds) occurs between the coating start end and the coating end in the resist coating film. The time difference of the resist coating film formation on the substrate in this coating scanning direction is the difference in waiting time until the vacuum drying process starts, that is, the difference in natural drying time, and this improves the film quality uniformity of the resist coating film even after the vacuum drying process. It is a cause of lowering.

  Specifically, in the resist coating film on the substrate, the coating start end portion is exposed to natural drying for 30 seconds longer than the coating end portion, and the degree of drying is progressing. In some cases, the starting end portion undergoes development processing with a relatively higher degree of drying and solidification than the coating end portion, and the residual film ratio of the resist pattern may not be uniform in the surface.

  On the other side, if the time from the completion of the resist coating process to the start of the reduced-pressure drying process has passed, the coating start end where the natural drying time is longer than the coating end in the resist coating film on the substrate However, the effect of drying under reduced pressure is difficult to obtain, and after the drying under reduced pressure, the coating end portion relatively increases the degree of drying and solidification of the surface layer portion rather than the coating starting end portion. The remaining film ratio of the pattern may not be uniform in the surface.

  The present invention solves the problems of the prior art as described above, and improves the efficiency of the reduced-pressure drying process performed immediately after the coating process and shortens the processing time in the spinless coating method using the slit nozzle. Provided are a substrate processing apparatus, a substrate processing method, and a vacuum drying apparatus that are realized and improve the film quality uniformity of a resist coating film after the vacuum drying process.

In the substrate processing apparatus according to the first aspect of the present invention, the slit nozzle that discharges the coating liquid from the slit-shaped discharge port is relatively moved in a predetermined coating scanning direction parallel to the substrate surface on the substrate to be processed. A coating treatment unit for forming a coating solution film on the substrate and the substrate on which the coating solution film is formed are placed in a sealed reduced-pressure atmosphere, and a predetermined air flow parallel to the substrate surface is passed on the substrate. A reduced-pressure drying unit that passes an inert gas stream in a direction to dry the coating liquid film, and the coating scanning direction and the stream passage direction are opposite or the same direction with respect to the substrate to so that fit in any of the vacuum drying unit is a depressurizable chamber housing to be out of the substrate, and an exhaust unit for evacuating the chamber, the substrate in the chamber Place horizontally A direction parallel to the airflow passage direction in order to form an inert gas airflow in the airflow passage direction in the processing space on the substrate placed on the placement portion and the placement portion in the chamber. And the first and second gas injection portions provided on both sides of the placement portion, and the first and second gases so that the airflow passage direction is in a desired direction with respect to the substrate. An inert gas supply unit that selectively injects the inert gas from either one of the injection units.
In the substrate processing apparatus according to the second aspect of the present invention, the slit nozzle that discharges the coating liquid from the slit-shaped discharge port is relatively moved in a predetermined coating scanning direction parallel to the substrate surface on the substrate to be processed. A coating treatment unit for forming a coating solution film on the substrate and the substrate on which the coating solution film is formed are placed in a sealed reduced-pressure atmosphere, and a predetermined air flow parallel to the substrate surface is passed on the substrate. A reduced-pressure drying unit that passes an inert gas stream in a direction to dry the coating liquid film, and the coating scanning direction and the stream passage direction are opposite or the same direction with respect to the substrate In accordance with any one of the above, in the lower space where the reduced-pressure drying processing unit forms an inert gas stream before entering the processing space under the processing space with the substrate or the mounting unit interposed therebetween Inactive, preventing entry The scan of the airflow to guide the process space, with a second airflow guide portion provided on the periphery of the mounting section.
In the substrate processing apparatus according to the third aspect of the present invention, the slit nozzle that discharges the coating liquid from the slit-shaped discharge port is relatively moved in a predetermined coating scanning direction parallel to the substrate surface on the substrate to be processed. A coating treatment unit for forming a coating solution film on the substrate and the substrate on which the coating solution film is formed are placed in a sealed reduced-pressure atmosphere, and a predetermined air flow parallel to the substrate surface is passed on the substrate. A reduced-pressure drying unit that passes an inert gas stream in a direction to dry the coating liquid film, and the coating scanning direction and the stream passage direction are opposite or the same direction with respect to the substrate to so that fit in any of the vacuum drying unit, the horizontal direction orthogonal to the air flow passage direction to restrict the spreading of the processing space, to guide the air flow of the inert gas into the air flow passage direction In order to A first airflow guide portion provided on.
In the substrate processing apparatus according to the fourth aspect of the present invention, the slit nozzle for discharging the coating liquid from the slit-shaped discharge port is relatively moved on the substrate to be processed in a predetermined coating scanning direction parallel to the substrate surface. Then, a coating processing unit for forming a coating solution film on the substrate and the substrate on which the coating solution film is formed are placed in a sealed reduced pressure atmosphere, and a predetermined plane parallel to the substrate surface is placed on the substrate. A reduced-pressure drying processing unit that passes an inert gas flow in the direction of air flow to dry the coating liquid film, and a direction of the substrate during transfer of the substrate from the coating processing unit to the reduced-pressure drying processing unit. A substrate rotation mechanism that rotates the substrate by a desired rotation angle in a horizontal plane, and the application scanning direction and the airflow passage direction are either opposite or the same direction with respect to the substrate. Match it.

In the substrate processing method according to the first aspect of the present invention, a slit nozzle for discharging a coating liquid from a slit-shaped discharge port is moved relative to the substrate to be processed in a coating scanning direction parallel to the substrate. A first step of forming a coating solution film on the processing solution, and placing the substrate on which the coating solution film is formed in a sealed reduced-pressure atmosphere, and passing a predetermined air flow parallel to the substrate on the substrate And a second step of drying the coating liquid film by passing an inert gas stream in the direction, and the coating scanning direction and the stream direction are opposite or the same direction with respect to the substrate to so that fit to any of said airflow passage orientation and reversible, selecting the air flow passage direction of orientation in the second step according to the application scanning direction of orientation in the first step .
In the substrate processing method according to the second aspect of the present invention, the slit nozzle that discharges the coating liquid from the slit-shaped discharge port is relatively moved in the coating scanning direction parallel to the substrate on the substrate to be processed. A first step of forming a coating solution film of a processing solution on a substrate; and the substrate on which the coating solution film is formed is placed in a sealed reduced-pressure atmosphere, and a predetermined parallel to the substrate on the substrate. A second step of allowing the coating liquid film to dry by passing an inert gas stream in the direction of air flow, wherein the coating scanning direction and the airflow passing direction are opposite to each other or The air flow in the second step is set so as to match any one of the same directions, and according to the direction of the coating scanning direction in the first step between the first step and the second step. Previous to select the direction of the passing direction By a desired rotation angle of the substrate in a horizontal plane to rotate.

In the substrate processing apparatus or the substrate processing method having the above-described configuration, the inert gas stream is passed in one direction parallel to the substrate surface on the substrate during the reduced-pressure drying process in a sealed reduced-pressure atmosphere. Not only can the evaporation of the solvent from the coating liquid film above be further promoted, but also the substrate scanning direction in the coating scanning direction can be adjusted by aligning the coating scanning direction and the airflow passage direction to either the opposite direction or the same direction with respect to the substrate. It is possible to compensate for variations in the elapsed time (natural drying time) from the formation of the coating film in each part to the start of drying under reduced pressure, and to make the film quality of the coating liquid film uniform on the substrate.

  The reduced-pressure drying apparatus of the present invention is a reduced-pressure drying apparatus for drying a film of a coating solution formed on a substrate to be processed in a reduced-pressure atmosphere, and a reduced-pressure chamber that accommodates the substrate in and out. An evacuation unit for evacuating the chamber, a placement unit for horizontally placing the substrate in the chamber, and a process on the substrate placed on the placement unit in the chamber First and second gas injection portions provided on both sides of the mounting portion facing each other in a direction parallel to the air flow passage direction in order to form an inert gas air flow in a predetermined air flow passage direction in the space; The first gas injection unit is turned on while the second gas injection unit is in an off state, and most of the inert gas injected from the first gas injection unit passes through the processing space in the first space. The first airflow formation mode that flows in the direction and the front The second gas injection unit is turned on while the first gas injection unit is in an off state, and most of the inert gas injected from the second gas injection unit passes through the processing space in the first direction. An airflow control unit that can be switched between a second airflow formation mode that flows in a second direction opposite to that of the airflow control mode.

  In the above-described reduced-pressure drying apparatus, it is possible to further promote the evaporation of the solvent from the coating liquid film on the substrate by forming an inert gas flow in a predetermined air flow passage direction in the processing space on the substrate during the reduced-pressure drying process. Instead, by switching to either the first air flow forming mode or the second air flow forming mode, the elapsed time from the formation of the coating film on each part of the substrate in the coating scanning direction to the start of reduced-pressure drying (natural drying time) ) Can be compensated for, and the film quality of the coating liquid film can be made uniform in the surface on the substrate.

  According to the substrate processing apparatus, the substrate processing method, or the reduced pressure drying apparatus of the present invention, the efficiency of the reduced pressure drying process performed immediately after the coating process in the spinless coating method using the slit nozzle is improved by the configuration and operation as described above. In addition, the processing time can be shortened, and the film quality uniformity of the resist coating film after the reduced-pressure drying process can be improved.

It is a top view which shows the layout of the resist application | coating development system as one structural example which can apply this invention. It is a top view which shows the structure of the application | coating process part in embodiment. FIG. 2 is a schematic plan view illustrating a configuration example of an air supply / exhaust system provided in the vacuum drying unit according to the embodiment. It is a cross-sectional view which shows the structure of the reduced pressure drying unit in embodiment. It is the II sectional view taken on the line of FIG. 4 which shows the structure (under reduced pressure drying) of the reduced pressure drying unit in embodiment. FIG. 5 is a cross-sectional view taken along the line II-II in FIG. 4 illustrating the configuration of the vacuum drying unit (at the time of substrate loading / unloading) in the embodiment. It is a top view. It is a schematic plan view which shows one effect | action of the reduced pressure drying unit in embodiment. It is a schematic plan view which shows one effect | action of the reduced pressure drying unit in embodiment. It is a schematic plan view which shows one effect | action of the reduced pressure drying unit in embodiment. It is a top view which shows the layout of the resist application | coating development system in another embodiment. It is a cross-sectional view which shows the structure of the reduced pressure drying unit in another embodiment. It is a longitudinal cross-sectional view which shows an effect | action of the reduced pressure drying unit of FIG. It is a longitudinal cross-sectional view which shows an effect | action of the reduced pressure drying unit of FIG.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

  FIG. 1 shows a resist coating and developing processing system as one configuration example to which the substrate processing apparatus, the substrate processing method and the vacuum drying apparatus of the present invention can be applied. The resist coating / developing system 10 is installed in a clean room. For example, a rectangular glass substrate is used as a processing target G, and cleaning, resist coating, pre-baking, developing, post-baking, etc. in a photolithography process are performed in an LCD manufacturing process. A series of processing is performed. The exposure process is performed by an external exposure apparatus 12 installed adjacent to this system.

  In the resist coating and developing system 10, a horizontally long process station (P / S) 16 is disposed at the center, and cassette stations (C / S) 14 and interface stations (I / I) are arranged at both ends in the longitudinal direction (X direction). F) 18 is arranged.

  The cassette station (C / S) 14 is a cassette loading / unloading port of the system 10, and arranges up to four cassettes C that can accommodate a plurality of substrates C in a horizontal direction (Y direction) by stacking substrates G in multiple stages. A cassette stage 20 that can be placed, and a transport mechanism 22 that takes in and out the substrate G to and from the cassette C on the stage 20 are provided. The transport mechanism 22 has a transport arm 22a that can hold the substrate G in units of one sheet, can be operated with four axes of X, Y, Z, and θ, and is adjacent to the adjacent process station (P / S) 16 side and the substrate. G can be delivered.

  The process station (P / S) 16 arranges each processing unit in the order of process flow or process on a pair of parallel and opposite process lines A and B extending in the horizontal system longitudinal direction (X direction). Yes.

  More specifically, the upstream process line A from the cassette station (C / S) 14 side to the interface station (I / F) 18 side includes a carry-in unit (IN PASS) 24, a cleaning process unit 26, a first The thermal processing unit 28, the carry-out unit (OUT PASS) 30, the coating process unit 32, the carry-in unit (IN PASS) 34, the second thermal processing unit 36, and the carry-out unit (OUT PASS) 38 are arranged in this order from the upstream side. Arranged in a row.

  More specifically, the carry-in unit (IN PASS) 24 is configured to receive an unprocessed substrate G from the transport mechanism 22 of the cassette station (C / S) 14 and to put it into the process line A with a predetermined tact. .

  The cleaning process unit 26 is provided with an excimer UV irradiation unit (E-UV) 40 and a scrubber cleaning unit (SCR) 42 in order from the upstream side, and the first thermal processing unit 28 is an adhesion layer in order from the upstream side. A unit (AD) 44 and a cooling unit (COL) 46 are provided. Each of these processing units 40 to 46 is configured as a flat-flow processing unit, and extends from the carry-in unit (IN PASS) 24 to the carry-out unit (OUT PASS) 30 by longitudinally extending the process units 40 to 46. A first forward flow transport unit 48 composed of a roller transport path is laid.

  The coating process unit 32 includes a resist coating unit (CT) 50 and a reduced pressure drying unit (VD) 52 in order from the upstream side. The resist coating unit (CT) is not a flat-flow processing unit, but the substrate G is placed and fixed on the stage, and a long slit nozzle is scanned and moved in a predetermined horizontal direction above the substrate G. A coating film of a resist solution is formed on G. The reduced-pressure drying unit (VD) 52 is not a flat-flow processing unit, but the substrate G is placed and fixed on a stage provided in a chamber capable of reducing the pressure, and the chamber G is evacuated to evacuate the substrate G. The upper resist coating film is configured to be dried in a reduced-pressure atmosphere. The configuration and operation in the coating process unit 32 will be described in detail later with reference to FIGS.

  Each of the pre-bake unit (PRE-BAKE) 54 and the cooling unit (COL) 56 arranged in the second thermal processing unit 36 is configured as a flat-flow processing unit, and from the carry-in unit (IN PASS) 34 For example, a second forward flow transport unit 58 is provided which is formed of, for example, a roller transport path extending vertically through the processing units 54 and 56 to the carry-out unit (OUT PASS) 38.

  On the other hand, in the downstream or return process line B from the interface station (I / F) 18 side to the cassette station (C / S) 14 side, a carry-in unit (not shown), a developing unit (DEV) 60, a post The bake unit (POST-BAKE) 62, the cooling unit (COL) 64, the inspection unit (AP) 66, and the carry-out unit (OUT-PASS) 68 are arranged in this order. Here, the carry-in unit (not shown) is provided below the peripheral unit (TITLER / EE) 76 of the interface station (I / F) 18, that is, on the same floor as the developing unit (DEV) 60.

  The developing unit (DEV) 60, the post-bake unit (POST-BAKE) 62, the cooling unit (COL) 64, and the inspection unit (AP) 66 are all configured as a flat-flow type processing unit. For example, a return side flow transport unit 70 including a roller transport path extending from the processing units 60 to 66 to the carry-out unit (OUT PASS) 68 is installed.

  The interface station (I / F) 18 includes a transfer device 72 for exchanging the substrate G with the processing units of the process lines A and B on the forward path and the return path and the adjacent exposure apparatus 12. A rotary stage (R / S) 74 and a peripheral device 76 are disposed around or next to the periphery. The rotary stage (R / S) 74 is a stage that rotates the substrate G in a horizontal plane, and is used to change the orientation of the rectangular substrate G when it is transferred to the exposure apparatus 12. The peripheral device 76 includes, for example, a titler (TITLER), a peripheral exposure device (EE), and the like.

  In this resist coating and developing system 10, a courtyard that extends straight in the X direction is surrounded by a cassette station (C / S) 14, a forward process line A, an interface station (I / F) 18, and a backward process line B. The space NS is provided. In this courtyard space NS, the substrate G is loaded in the section of the carry-out unit (OUT PASS) 30 → the resist coating unit (CT) 50 → the reduced pressure drying unit (VD) 52 → the carry-in unit (IN PASS) 34 in the process line A in the forward path. A transport device 78 for sequential transfer is provided.

  Here, the processing procedure of all steps for one substrate G in the resist coating and developing processing system 10 will be described. First, in the cassette station (C / S) 14, the transport mechanism 22 takes out one substrate G from any one of the cassettes C on the stage 20, and removes the taken substrate G in the process station (P / S) 16. Carry into the carry-in unit (IN PASS) 24 on the process line A side. The substrate G is transferred from the carry-in unit (IN PASS) 24 to the first forward flat flow and transferred onto the transfer path 48.

  The substrate G put into the first forward flow transport path 48 is first subjected to an ultraviolet cleaning process and a scrubbing cleaning process by the excimer UV irradiation unit (E-UV) 40 and the scrubber cleaning unit (SCR) 42 in the cleaning process unit 26. Are applied sequentially. The scrubber cleaning unit (SCR) 42 removes particulate dirt from the substrate surface by performing brushing cleaning and blow cleaning on the substrate G that moves horizontally on the flat flow path 48, and then rinses. Finally, the substrate G is dried using an air knife or the like. When a series of cleaning processes in the scrubber cleaning unit (SCR) 42 is completed, the substrate G passes through the first thermal processing unit 28 as it is down the first forward flow and transport path 48.

  In the first thermal processing section 28, the substrate G is first subjected to an adhesion process using vapor HMDS in an adhesion unit (AD) 44, and the surface to be processed is hydrophobized. After the completion of this adhesion process, the substrate G is cooled to a predetermined substrate temperature by a cooling unit (COL) 46. Thereafter, the substrate G enters the carry-out unit (OUT PASS) 30 and stops here.

  Immediately thereafter, the transfer device 78 accesses the carry-out unit (OUT PASS) 30 from the courtyard space NS, and carries the substrate G out of the first forward flow and the transfer path 48. Next, the transfer device 78 moves in the courtyard space NS, and carries the substrate G into the adjacent resist coating unit (CT) 50.

  In the resist coating unit (CT) 50, as will be described later, the slit nozzle is horizontally moved (scanned) in one direction parallel to the substrate surface on the substrate G placed on the stage, and the upper surface ( A coating film of a resist solution is formed on the surface to be processed.

  When the resist coating process is completed in the resist coating unit (CT) 50, the transfer device 78 unloads the substrate G from the resist coating unit (CT) 50, moves in the courtyard space NS, and dries the substrate G under reduced pressure. Carry it into the unit (VD) 52.

  In the reduced pressure drying unit (VD) 52, as will be described later, the substrate G is horizontally placed on a stage in a chamber that can be decompressed, the inside of the chamber is decompressed by evacuation, and the processing space on the substrate G is The resist coating film on the substrate G is dried by flowing an inert gas in one direction.

  The transfer device 78 carries out the substrate G that has been subjected to the reduced pressure drying process from the reduced pressure drying unit (VD) 52, moves in the courtyard space NS, and carries the substrate G into the carry-in unit (IN-PASS) 34. Immediately after this, roller transport is started by the second forward flow transport unit 58, and the substrate G is transported to the downstream side of the process line A in a flat flow and passes through the second thermal processing unit 36.

  In the second thermal processing section 36, the substrate G is first pre-baked by the pre-bake unit (PRE-BAKE) 54 as a heat treatment after resist application or a heat treatment before exposure. By this pre-baking, the solvent remaining in the resist film on the substrate G is evaporated and removed, and the adhesion of the resist film to the substrate is enhanced. Next, the substrate G is cooled to a predetermined temperature by a cooling unit (COL) 56. Thereafter, the substrate G is taken up by the transport device 72 of the interface station (I / F) 18 from the unloading unit (OUT-PASS) 38 at the end point of the second forward flow transport unit 58.

  In the interface station (I / F) 18, the substrate G is subjected to, for example, a 90-degree direction change by the rotary stage 74 and then carried into the peripheral exposure device (EE) of the peripheral device 76, where it adheres to the peripheral portion of the substrate G. After receiving the exposure for removing the resist to be developed, the resist is sent to the adjacent exposure apparatus 12.

  In the exposure device 12, a predetermined circuit pattern is exposed to the resist on the substrate G. Then, when the substrate G that has undergone pattern exposure is returned from the exposure apparatus 12 to the interface station (I / F) 18, first, it is carried into a titler (TITLER) of the peripheral device 76, where it is transferred to a predetermined portion on the substrate. Is recorded. Thereafter, the substrate G is carried into the carry-in unit (not shown) below the peripheral device 76 from the transfer device 72.

  In this way, the substrate G is now moved toward the cassette station (C / S) 14 on the roller transport path of the return-flow parallel transport path 70 laid in the process line B of the return path.

  In the first development unit (DEV) 60, the substrate G is subjected to a series of development processes of development, rinsing, and drying while being conveyed in a flat flow.

  The substrate G that has undergone a series of development processing in the development unit (DEV) 60 is then returned to the normal flow and placed on the conveyance path 70, and the third thermal processing units (62, 64) and the inspection unit (AP) 66 are passed through. Pass sequentially. In the third thermal processing section, the substrate G is first subjected to heat treatment after development processing, that is, post-baking by a post-bake unit (POST-BAKE) 62. By this post-baking, the developing solution and the cleaning solution remaining in the resist film on the substrate G are removed by evaporation, and the adhesion of the resist pattern to the substrate is enhanced. Next, the substrate G is cooled to a predetermined substrate temperature by a cooling unit (COL) 64. In the inspection unit (AP) 66, the resist pattern on the substrate G is subjected to non-contact line width inspection, film quality / film thickness inspection, and the like.

  The carry-out unit (OUT PASS) 68 receives the substrate G that has been processed in all steps from the return-flow flat-flow conveyance path 70 and transfers it to the conveyance mechanism 22 of the cassette station (C / S) 14. On the cassette station (C / S) 14 side, the transport mechanism 22 accommodates the processed substrate G received from the carry-out unit (OUT PASS) 68 in any one (usually the original) cassette C.

  In the resist coating and developing system 10, the substrate processing apparatus and method of the present invention can be applied to the coating process unit 32, and the vacuum drying apparatus of the present invention can be applied to the vacuum drying unit (VD) 52.

Hereinafter, the configuration and operation of the coating process unit 32 and the reduced-pressure drying unit (VD) 52 in one embodiment of the present invention will be described in detail with reference to FIGS.

FIG. 2 shows a layout configuration around the coating process unit 30 and its surroundings. In the figure, with reference to the direction of the process line A (X direction), the front side of the rectangular substrate G is indicated by G _F , the left side is indicated by G _L , the right side is indicated by G _R , and the rear side is indicated by G _B.

  As shown in the figure, the resist coating unit (CT) 50 includes a stage 80 for horizontally placing and holding the substrate G, and a slit nozzle on the upper surface (surface to be processed) of the substrate G placed on the stage 80. 82, a coating processing unit 84 for applying a resist solution by a spinless method, and a nozzle refreshing unit 86 for recovering the resist solution discharge function of the slit nozzle 82 while the coating process is not being performed. A lift pin 85 that can be moved up and down for loading / unloading the substrate G on the stage 80 is also provided.

The slit nozzle 82 is a long nozzle having a slit-like discharge port that can cover the substrate G on the stage 80 from one end (front side G _F ) to the other end (rear side G _B ) in the X direction. It is connected to a liquid supply source (not shown). The coating processing unit 84 includes a nozzle moving mechanism 88 that horizontally moves the slit nozzle 82 above the stage 80 in the Y direction during the coating process. The nozzle moving mechanism 88 includes an inverted U-shaped support 90 that horizontally supports the slit nozzle 82, and a rectilinear drive unit 92 that linearly moves the support 90 in both directions in the Y direction.

  While the slit nozzle 82 discharges the resist solution in a strip shape and moves horizontally (scans) in the Y direction above the stage 80, a desired film is laid on the substrate G from one end to the other end in the Y direction. A thick coating film of a resist solution is formed.

In this embodiment, with respect to coating the scanning direction of the substrate G, toward a first mode of applying scanning toward the right G _R from the left side G _L of the substrate G, the right side G _R of the substrate G in opposition to the left side G _L Two modes of the second mode of application scanning are possible, and either mode can be selected. Therefore, for example, it is possible to always select only the first mode or the second mode for the substrate G of a certain lot, or alternatively, the first mode and the second mode are alternately switched for each substrate. It is also possible. In any case, a system controller (not shown) that controls the entire resist coating / developing system 10 or a local controller (not shown) that controls each part in the coating processing unit 32 is provided for each substrate G. It manages whether the first mode or the second mode is selected or executed.

  The vacuum drying unit (VD) 52 includes a lower chamber 96 having a fixed structure that constitutes a chamber body, and a movable upper chamber (not shown in FIG. 2) that constitutes an upper lid. The upper chamber is moved up and down (not shown) so that close contact (chamber sealing) and separation (chamber release) with respect to the lower chamber 96 can be switched.

  The lower chamber 96 is substantially rectangular, and a stage 98 for horizontally placing and supporting the substrate G is disposed at the center, and exhaust ports 100a, 100b, 100c, and 100d are provided at the four corners of the bottom surface of the chamber. ing. Each exhaust port 100a to 100d communicates with a vacuum pump (not shown in FIG. 2) via an exhaust pipe (not shown in FIG. 2). The chamber is sealed, and the pressure in the chamber can be reduced to a desired vacuum pressure value by the vacuum pump.

  Further, in the lower chamber 96 of the reduced pressure drying unit (VD) 52, both sides in the Y direction (near the side walls) with the stage 98 sandwiched in correspondence with the coating scanning direction (Y direction) in the resist coating unit (CT) 50. A pair of gas injection units 102 and 104 are provided.

  The transfer device 78 includes a transfer robot having a transfer arm 78a capable of holding the substrate G in units of one sheet, and can be operated with four axes of X, Y, Z, and θ, and moves in the courtyard space NS. All units whose carry-in or carry-out port faces the courtyard space NS, in particular, the resist coating unit (CT) 50, the vacuum drying unit (VD) 52, and the carry-out unit (OUT-PASS) of the first forward flattening conveyance unit 48 ) 30, the carry-in unit (IN-PASS) 34 of the second forward flow transport unit 58 can be accessed, and the substrate G can be transferred to and from these units.

  In FIG. 2, the first forward flow transport unit 48 forms a roller transport path by arranging rod-shaped rollers 106 each having a plurality of rollers attached at regular intervals in the transport direction (X direction) to form a roller transport path. Each roller 106 is rotationally driven by a roller driving unit (not shown) including a mechanism and the like, and the substrate G is transferred on the roller transfer path. In the cooling unit (COL) 46, a cooling mechanism (not shown) is provided that cools the substrate G passing by roller conveyance to a predetermined temperature by heat exchange or by applying cold air. The carry-out unit (OUT-PASS) 30 is configured to stop or stop the substrate G that has been conveyed in a flat flow along the roller conveyance path of the first forward flow conveyance unit 48, and to the conveyance arm 78 a of the conveyance device 78. It is configured to receive G. Note that, in the first forward flow transport unit 48, the roller transport path may be divided into a plurality of sections, and an independent roller driving unit may be provided for each section.

  Similarly, the second forward flow conveying unit 58 also forms a roller conveyance path by arranging rod-shaped rollers 108 having a plurality of rollers attached at regular intervals in the conveyance direction (X direction) to form a motor and transmission mechanism. Each roller 108 is rotationally driven by a roller drive unit (not shown) having the above, and the substrate G is transported on the roller transport path. In the pre-bake unit (PRE-BAKE) 54, a heater mechanism (not shown) is provided that heats the substrate G passing by roller conveyance to a predetermined temperature by heat exchange or by applying hot air. The carry-in unit (IN-PASS) 34 has a configuration in which the substrate G can be received from the transfer arm 78a of the transfer device 78, and a structure in which a flat flow transfer (roller transfer) can be started immediately after receiving the substrate G. Also in the second forward flow conveying section 58, the roller conveying path may be divided into a plurality of sections, and an independent roller driving section may be provided for each section.

  Next, the configuration and operation of the vacuum drying unit (VD) 52 in this embodiment will be described in detail with reference to FIGS.

  FIG. 3 shows a configuration example of the air supply / exhaust system in the vacuum drying unit (VD) 52.

  In the air supply system, the gas jetting portions 102 and 104 in the lower chamber 96 are connected to a common inert gas supply source 114 having an inert gas tank 110 and a blower (or compressor) 112, respectively. 116 (2). In the middle of the gas supply pipes 116 (1) and 116 (2), flow control valves 118 (1) and 118 (2) and on-off valves 120 (1) and 120 (2) are provided, respectively. The inert gas used is, for example, nitrogen gas.

  In the exhaust system, exhaust ports 100a, 100b, 100c, and 100d in the lower chamber 96 are connected to a common exhaust device 126 having a vacuum pump 122 and a pressure control valve 124, respectively, by exhaust pipes 128 (1), 128 (2), They are connected via 128 (3) and 128 (4). On-off valves 130 (1), 130 (2), 130 (3), and 130 (4) are provided in the middle of the exhaust pipes 128 (1), 128 (2), 128 (3), and 128 (4), respectively. It has been.

  As will be described later, in this reduced-pressure drying unit (VD) 52, when an inert gas for promoting drying is flowed during the reduced-pressure drying process, a one-way air flow is applied to the processing space PS (FIG. 5A) on the substrate G. In order to form, control is performed such that only one of the gas ejection portions 102 and 104 is selectively activated and the other is stopped.

  More specifically, when the gas ejection unit 102 is selectively operated, the air supply system turns on the on-off valve 120 (1) and turns off the on-off valve 120 (2). In the exhaust system, the on-off valves 130 (3) and 130 (4) are turned on so that the inside of the chamber is exhausted through the exhaust ports 100c and 100d opposite to the gas ejection part 102 (that is, the flow of inert gas is drawn). In addition, the on-off valves 130 (1) and 130 (2) are turned off so that the exhaust ports 100a and 100b on the front side do not draw the airflow.

  On the other hand, when the gas ejection unit 104 is selectively operated, the air supply system turns on the on-off valve 120 (2) and turns off the on-off valve 120 (1). In the exhaust system, the on-off valves 130 (1) and 130 (2) are turned on to exhaust the inside of the chamber through the exhaust ports 100 a and 100 b on the opposite side of the gas ejection part 104 (that is, to draw an inert gas flow). In addition, the on-off valves 130 (3) and 130 (4) are turned off so that the exhaust ports 100c and 100d on the front side do not draw the airflow.

  FIG. 4, FIG. 5A and FIG. 5B show a specific configuration example of the vacuum drying unit (VD) 52. FIG. 4 is a cross-sectional view showing the configuration of the lower chamber 96, FIG. 5A is a vertical cross-sectional view taken along line II in FIG. 4, and FIG. 5B is a vertical cross-sectional view taken along line II-II in FIG.

The lower chamber 96 of the vacuum drying unit (VD) 52 is provided with an air flow control unit 132 for controlling the flow of an inert gas around the substrate G placed on the stage 98 during the vacuum drying. Yes. The air flow control unit 132 is provided with air flow guide walls (preferably positioned as close as possible to the stage 98) on both sides of the stage 98 inside the chamber side walls 96 (2) and 96 (4) facing each other in the X direction. (First airflow guide portions) 134A and 134B, and a rectangular airflow shielding wall (second airflow guide portion) 136 that covers the space under the substrate G placed on the stage 98.

  As shown in FIG. 4, the airflow guide walls 134A and 134B are arranged in the Y direction from the position near the gas injection unit 102 and the exhaust ports 100a and 100b provided on one side (left side in the figure) of the stage 98. It extends to a position near the gas injection part 104 and the exhaust ports 100c, 100d on the opposite side (right side) of the gas. In the height direction (Z direction), as shown in FIG. 5B, the airflow guide walls 134A and 134B have a size that reaches from the bottom surface of the lower chamber 96 to the lower surface (ceiling) of the upper chamber 138 or the vicinity thereof.

  The airflow shielding wall 136 extends vertically from the bottom surface of the lower chamber 96 around the stage 98 to a height that is in contact with the peripheral edge of the back surface (lower surface) of the substrate G placed on the stage 98 or a height near the height. It extends (FIGS. 5A and 5B).

  The stage 98 is coupled to a lifting / lowering actuator 142 via a lifting / lowering driving shaft 140 extending in the vertical direction, and is used to transfer the substrate G to and from the transfer device 78 (FIG. 2) or in a chamber ceiling (upper chamber in a vacuum drying process). The lower surface of 138) can be moved up and down to adjust the distance or clearance. The elevating drive shaft 140 passes through the bottom wall of the lower chamber 96 so as to be movable up and down, and the through hole is vacuum-sealed by a seal member 144.

  Next, the operation of the vacuum drying unit (VD) 52 in this embodiment will be described with reference to FIGS.

  As described above, in the resist coating unit (CT) 50 adjacent to the reduced-pressure drying unit (VD) 52, the slit nozzle 82 is moved in one direction (Y direction) on the substrate G, and the resist solution is applied onto the substrate G. The coating film RM (FIGS. 6 and 7) is formed. After the completion of the resist coating process, the transfer device 78 transfers the substrate G from the resist coating unit (CT) 50 to the reduced pressure drying unit (VD) 52. At this time, the vacuum drying unit (VD) 52 opens the upper chamber 138 and lifts the stage 98 up from the lower chamber 96 to receive the substrate G (FIG. 5B).

  Next, in the vacuum drying unit (VD) 52, the stage 98 is lowered into the lower chamber 96, the upper chamber 138 is closed to seal the chamber, and the air supply / exhaust system (FIG. 3) is activated. As shown in FIG. 5A, a processing space PS having a desired clearance is formed between the substrate G placed on the stage 98 and the chamber ceiling surface (the lower surface of the upper chamber 138) in a sealed chamber. Is done.

Substrate G is placed on the stage 98 in the lower chamber 96, as shown in FIG. 4, front edge G _F and the rear side G _B airflow guide wall 134A of the substrate G in the X direction, respectively opposite to 134B In the Y direction, the left side G _L and the right side G _R of the substrate G face the gas injection units 102 and 104, respectively.

  The controller of the reduced-pressure drying unit (VD) 52 grasps the mode (first mode / second mode) relating to the direction of the coating scanning direction selected with respect to the substrate G in the resist coating unit (CT) 50, The direction of the inert gas flowing in the processing space PS during the drying under reduced pressure is determined according to a determination criterion obtained by combining the selected mode and other predetermined determination conditions, and the inertness having such directivity is determined. The air supply / exhaust system (FIG. 3) is controlled so that a gas flow is obtained.

  Here, the determination condition is that the direction of the coating scanning direction selected by the resist coating unit (CT) 50 with respect to the substrate G and the air flow selected with respect to the substrate G by the reduced pressure drying unit (VD) 52. This is a criterion for determining whether the direction of the passage direction should be reversed or the same. Usually, the type of resist used, the process from the end of the resist coating process to the start of the vacuum drying process The time (natural drying time) is integrated, and a determination result (command) may be given from the system controller as one piece of recipe information.

  As an example, with respect to the substrate G carried into the reduced pressure drying unit (VD) 52, it is assumed that the system controller instructs that the direction of the airflow passage direction should be opposite to the direction of the coating scanning direction.

In this case, when the second mode is selected for scanning applied toward the left G _L from the right side G _R the resist coating unit (CT) 50 in the substrate G, the vacuum drying unit (VD) 52, FIG. As shown in FIG. 6, airflow control is performed such that the left gas ejection unit 102 is selectively activated and the right gas ejection unit 104 is stopped during the reduced pressure drying process.

  When the left gas ejection portion 102 is selectively operated, as described above, the exhaust flow paths of the front (left side) exhaust ports 100a and 100b are closed, and the chamber is passed through the opposite (right side) exhaust ports 100c and 100d. Inside exhaust is performed.

As shown in FIG. 5A, the inert gas injected above the gas jetting part 102 or toward the center of the chamber does not flow into the lower space below the substrate G by the airflow shielding wall 136 and is above the substrate G. As shown in FIG. 6, the spread in the X direction is restricted on the substrate G, that is, in the processing space PS by the airflow guide walls 134A and 134B, and the left side G _L to the right side G _{R of the} substrate G are guided to the processing space PS. When the gas passes through the processing space PS (passes through), the air is sucked into the exhaust ports 100 c and 100 d while flowing downward from the substrate G.

Further, when the first mode for scanning applied toward the right G _R from the left side G _L the resist coating unit (CT) 50 in the substrate G is selected, the vacuum drying unit (VD) 52, 7 As shown in FIG. 4, air flow control is performed so that the right gas ejection unit 104 is selectively activated and the left gas ejection unit 102 is stopped during the vacuum drying process.

  When the right gas ejection section 104 is selectively operated, as described above, the exhaust flow paths of the front (right side) exhaust ports 100c and 100d are closed, and the chamber is passed through the opposite (left side) exhaust ports 100a and 100b. Inside exhaust is performed.

The inert gas injected above the gas ejection part 104 or toward the center of the chamber is guided to the processing space PS above the substrate G without flowing into the lower space below the substrate G by the airflow shielding wall 136. as shown in FIG. 7, the airflow guide wall 134A, while the X-direction extent is restricted on the clogging processing space PS of the substrate G by 134B, flows in one direction from the right side G _R of the substrate G toward the left side G _L When passing through (passing through) the processing space PS, the air is sucked into the exhaust ports 100a and 100b while flowing down to the lower side of the substrate G.

  Thus, by forming an inert gas stream in one direction parallel to the substrate surface on the substrate G during the vacuum drying process, evaporation of the organic solvent from the resist coating film RM on the substrate G is further promoted. The drying time under reduced pressure can be shortened. The solvent evaporation promoting action by such reduced-pressure air drying is not constant at each position on the substrate G, and is usually larger on the upstream side of the air stream with less steam and smaller on the downstream side of the air stream with more steam.

Therefore, when the left gas ejection unit 102 is selectively operated as described above, the effect of the reduced pressure air flow drying on the resist coating film RM on the substrate G is the right side G _R (starting point of coating scanning) of the substrate G. It is the smallest and becomes larger toward the left side G _L (end of application scanning) of the substrate G. However, as a result, the time difference (variation) of the resist coating film formation that occurs in the coating scanning direction and the difference in natural drying time (variation) are canceled as a result, and the film quality of the resist coating film RM on the substrate G is made uniform in the surface. can do.

Further, when the right gas ejection unit 104 is selectively operated as described above, the effect of the reduced pressure air flow drying on the resist coating film RM on the substrate G is the left side G _{L of the} substrate G (starting point of coating scanning). It is the smallest and becomes larger toward the right side G _R (end of application scanning) of the substrate G. However, as a result, the time difference (variation) of the resist coating film formation that occurs in the coating scanning direction and the difference in natural drying time (variation) are canceled as a result, and the film quality of the resist coating film RM on the substrate G is made uniform in the surface. can do.

  As another example, with respect to the substrate G carried into the reduced pressure drying unit (VD) 52, the system controller may instruct that the direction of the airflow passage direction should be the same as the direction of the application scanning direction.

  In this resist coating and developing system 10, after the resist coating process is completed, the transfer device 78 carries the substrate G out of the resist coating unit (CT) 50, and passes through the courtyard space NS to the adjacent vacuum drying unit (VD) 52. Carry in. In the reduced pressure drying unit (VD) 52, after the substrate G is carried in, the upper chamber 138 is put on the lower chamber 96 and the chamber is sealed, and then the vacuum evacuation is started, so that the substrate G in the resist coating unit (CT) 50 is unloaded. If loading, substrate transport by the transport device 78, or loading of the substrate G in the vacuum drying unit (VD) 52 takes a long time, the time from the completion of the resist coating process to the start of the vacuum drying process (natural drying time) becomes long. May be too much. Then, in the resist coating film RM on the substrate G, the application start end portion having a longer natural drying time than the application end portion is less likely to obtain the effect of reduced pressure drying, and after the reduced pressure drying process, the application start end portion is less than the application start end portion. The coating end portion relatively increases the degree of drying and solidification of the surface layer portion, and in this case as well, the residual film ratio of the resist pattern after development may not be uniform in the surface.

  When such a situation or phenomenon is observed, the difference in the time difference (variation) in the formation of the resist coating film that occurs in the coating scanning direction and the difference in natural drying time are caused when the direction of the airflow passage direction is the same as the direction of the coating scanning direction. As a result, (variation) can be canceled and the film quality of the resist coating film RM on the substrate G can be made uniform in the surface.

Therefore, when the first mode for scanning applied toward the right G _R from the left side G _L the resist coating unit (CT) 50 in the substrate G is selected, the vacuum drying unit (VD) 52, FIG. 8 As shown in FIG. 6, air flow control is performed such that the left gas ejection part 102 is selectively operated and the right gas ejection part 104 is stopped during the vacuum drying process.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and other embodiments or various modifications can be made within the scope of the technical idea.

  For example, in the above-described embodiment, the processing space on the substrate G is set in the reduced-pressure drying unit (VD) 52 in order to adjust the coating scanning direction and the airflow passage direction to either the opposite direction or the same direction with respect to the substrate G. A mechanism and a function for switching the direction of the air flow of the inert gas formed on the PS were provided.

  However, as another embodiment, even if the direction of the flow of the inert gas formed in the processing space PS on the substrate G in the reduced pressure drying unit (VD) 52 is not switchable and always constant, as shown in FIG. In addition, by installing the rotary stage (R / S) 146 in the courtyard space NS, airflow switching control equivalent to the above-described embodiment can be realized.

  In this case, the rotary stage (R / S) 146 rotates the direction of the substrate G by a predetermined rotation angle (180 ° in the layout of FIG. 9) in the horizontal plane. Therefore, after unloading the substrate G after the resist coating process from the resist coating unit (CT) 50, the direction of the substrate G is reversed by 180 ° via the rotary stage (R / S) 146, and then the reduced pressure drying unit ( VD) 52, if it is possible to carry it into 52, it is carried into vacuum drying unit (VD) 52 without passing through rotary stage (R / S) 146 and thus without reversing the direction of substrate G. It is also possible to select either case. Accordingly, the application scanning direction and the airflow passage direction can be selected with respect to the substrate G by selecting either the opposite direction or the same direction.

  In the above-described embodiment, the exhaust ports 100 a to 100 d of the vacuum drying unit (VD) 52 are arranged at the four corners of the lower chamber 96. However, as another embodiment, as shown in FIG. 10, one or a plurality of exhaust ports 148 (1), 148 (2) are arranged below the substrate G, that is, inside the airflow shielding wall 136. Is also possible.

In this case, the air flow shielding wall 136 four sides of the plate wall 136F, divided 136B, the 136L, 136 R, airflow guiding walls 134A, 134B and the counter (adjacent) to plate wall 136F, the 136B fixed, gas injection portion 102, 104 It is possible to suitably adopt a configuration that allows the plate walls 136L and 136R that face each other to move up and down. Here, as shown in FIGS. 11A and 11B, the movable plate walls 136 </ b> L and 136 </ b> R that can be moved up and down are respectively driven up and down by elevating actuators 150 </ b> L and 150 </ b> R disposed below the lower chamber 96.

  In such a configuration, when the left gas ejection portion 102 is selectively operated, one (left side) movable plate wall 136L is located above the chamber bottom surface (preferably reaching the back surface of the substrate G) as shown in FIG. 11A. The movable plate wall 136R on the opposite side (right side) is retracted below the bottom surface of the chamber. The exhaust ports 148 (1) and 148 (2) are connected to a common exhaust device 126 (FIG. 3) via exhaust pipes 152 (1) and 152 (2), respectively, and all exhaust passages are opened. Set to the (On) state.

In this case, the inert gas injected above the gas jetting part 102 or toward the center of the chamber does not flow into the lower space below the substrate G by the left movable plate wall 136L, but the processing space PS above the substrate G. is guided into the airflow guide wall 134A, while the X-direction extent is restricted on the clogging processing space PS of the substrate G by 134B, flows in one direction from the left side G _L of the substrate G on the right side G _R, the processing space After passing through PS, it passes over the right movable plate wall 136R that is being retracted, moves under the substrate G, and is sucked into the exhaust ports 148 (1) and 148 (2).

  When the right gas ejection portion 104 is selectively operated, as shown in FIG. 11B, the right movable plate wall 136R protrudes above the bottom surface of the chamber (preferably to a height reaching the back surface of the substrate G) or While being raised, the movable plate wall 136L on the opposite side (left side) is retracted below the bottom surface of the chamber. The exhaust ports 148 (1) and 148 (2) are all opened (ON).

In this case, the inert gas injected above the gas ejection part 104 or toward the center of the chamber does not flow into the lower space below the substrate G by the movable plate wall 136R on the right side, and the processing space PS above the substrate G. is guided into the airflow guide wall 134A, while the X-direction extent is restricted on the clogging processing space PS of the substrate G by 134B, flows in one direction from the right side G _R of the substrate G toward the left side G _L, the processing space When passing through the PS, it passes over the retracted left movable plate wall 136L and under the substrate G, and is sucked into the exhaust ports 148 (1) and 148 (2).

  In the vacuum drying unit (VD) 52, during the vacuum drying process, the formation of the inert gas stream in one direction in the processing space PS is started or stopped at an arbitrary timing, and the direction of the inert gas stream in the middle. Can be reversed, and the flow rate of the airflow can be varied. Therefore, for example, even in the configuration in which exhaust ports are arranged at the four corners of the chamber, immediately after the start of the vacuum drying process or just before the end, exhaust gas that does not rectify the inert gas by opening all the exhaust ports (ON) is performed. It is also possible to do this. In particular, when purging the inside of a sealed chamber with an inert gas at the end of the vacuum drying process, the inert gas is simultaneously ejected from both the left and right (all) gas ejection portions 104, and all the exhaust ports 100a to 100d ( 148 (1), 148 (2)) may be used for quick exhaust.

  Although not shown, the plate walls 136F and 136B facing (adjacent) the airflow guide walls 134A and 134B can also be configured to be movable up and down. In this case, for example, when the left gas ejection unit 102 is selectively operated, the processing space which is one of the important parameters of the reduced pressure air flow drying is obtained by changing the height positions of the plate walls 136L, 136F, and 136B. PS clearance can be varied.

  Further, in the vacuum drying unit (VD) 52, not only the structure and shape of the chamber itself, but also the parts inside and outside the chamber, in particular, the structure, number, arrangement position, etc. of the stage, gas ejection part, and exhaust port are those of the above-described embodiment. However, various modifications are possible.

  In the resist coating and developing system described above, the resist coating unit (CT) 50 and / or the vacuum drying unit (VD) 52 of the coating processing unit 32 can be configured as a flat-flow processing unit. The present invention is also applicable to a flat-flow type resist coating unit and / or a vacuum drying unit.

  The substrate to be processed in the present invention is not limited to a glass substrate for LCD, and other flat panel display substrates, semiconductor wafers, CD substrates, photomasks, printed substrates and the like are also possible. The coating solution is not limited to the resist solution, and for example, a processing solution or a chemical solution such as an interlayer insulating material, a dielectric material, and a wiring material can be used.

Claims (15)

A coating process for forming a coating liquid film on the substrate by moving a slit nozzle that discharges the coating liquid from a slit-like discharge port in a predetermined coating scanning direction parallel to the substrate surface on the substrate to be processed. And
The coating liquid film is formed by placing the substrate on which the coating liquid film is formed in a sealed reduced-pressure atmosphere, and passing an inert gas stream in a predetermined airflow passage direction parallel to the substrate surface on the substrate. A vacuum drying treatment section for drying the
And said air flow passage direction and the coating scanning direction on so that fit to one of opposite directions or the same direction with respect to the substrate,
The reduced-pressure drying processing unit,
A depressurizable chamber for removably containing the substrate;
An exhaust part for evacuating the chamber;
A placement unit for placing the substrate horizontally in the chamber;
In order to form an air flow of inert gas in the air flow passage direction in the processing space on the substrate placed on the mounting portion in the chamber, the front faces each other in a direction parallel to the air flow passage direction. First and second gas injection units provided on both sides of the placement unit;
An inert gas supply unit that selectively injects an inert gas from one of the first and second gas injection units so that the airflow passage direction is a desired direction with respect to the substrate;
Having
Substrate processing equipment. The exhaust part is
In the chamber, the first exhaust port provided on the opposite side of the first gas injection unit with the mounting portion as the center, and the second exhaust port provided on the opposite side of the second gas injection unit An exhaust port,
When the first gas injection unit injects the inert gas, the exhaust passage on the second exhaust port side is closed, and the chamber is exhausted through the first exhaust port,
When the second gas injection unit injects the inert gas, the exhaust passage on the first exhaust port side is closed, and the inside of the chamber is exhausted via the second exhaust port.
The substrate processing apparatus according to claim 1 . A coating process for forming a coating liquid film on the substrate by moving a slit nozzle that discharges the coating liquid from a slit-like discharge port in a predetermined coating scanning direction parallel to the substrate surface on the substrate to be processed. And
The coating liquid film is formed by placing the substrate on which the coating liquid film is formed in a sealed reduced-pressure atmosphere, and passing an inert gas stream in a predetermined airflow passage direction parallel to the substrate surface on the substrate. A vacuum drying treatment section for drying the
And said air flow passage direction and the coating scanning direction on so that fit to one of opposite directions or the same direction with respect to the substrate,
The reduced-pressure drying treatment unit is inactive by preventing an air flow of an inert gas before entering the treatment space from entering the lower space formed under the treatment space with the substrate or the placement unit interposed therebetween. In order to guide the gas flow to the processing space, it has a second air flow guide provided around the mounting portion.
Substrate processing equipment. The second airflow guide section is
A plate wall movable or displaceable in the vertical direction;
The substrate according to claim 3 , further comprising: a plate wall height adjusting unit configured to change a height position of the upper end of the plate wall in accordance with a height position of the placement unit in order to adjust a clearance of the processing space. Processing equipment. The exhaust part is
In the chamber, an exhaust port provided at the bottom of a lower space formed under the processing space across the substrate or the mounting portion,
A first plate wall portion that can be raised and lowered to selectively shield the lower space facing the first gas injection portion;
A first lifting mechanism for moving the first plate wall up and down;
A second plate wall that can be raised and lowered to selectively shield the lower space facing the second gas injection unit;
A second lifting mechanism for moving the second plate wall up and down,
When the first gas injection unit injects the inert gas, the first plate wall portion is raised above the bottom of the chamber to shield the lower space and the second plate wall portion to the chamber. Evacuate below the bottom of the
When the second gas injection unit injects an inert gas, the second plate wall portion is raised above the bottom of the chamber to shield the lower space, and the first plate wall portion is moved to the chamber. Evacuate below the bottom of the
The substrate processing apparatus according to claim 1 . A coating process for forming a coating liquid film on the substrate by moving a slit nozzle that discharges the coating liquid from a slit-like discharge port in a predetermined coating scanning direction parallel to the substrate surface on the substrate to be processed. And
The coating liquid film is formed by placing the substrate on which the coating liquid film is formed in a sealed reduced-pressure atmosphere, and passing an inert gas stream in a predetermined airflow passage direction parallel to the substrate surface on the substrate. A vacuum drying treatment section for drying the
And said air flow passage direction and the coating scanning direction on so that fit to one of opposite directions or the same direction with respect to the substrate,
In order for the reduced-pressure drying processing unit to regulate the spread of the processing space in a horizontal direction orthogonal to the airflow passage direction and guide the airflow of the inert gas in the airflow passage direction, both sides of the mounting portion A first airflow guide provided in the
Substrate processing equipment. A coating process for forming a coating liquid film on the substrate by moving a slit nozzle that discharges the coating liquid from a slit-like discharge port in a predetermined coating scanning direction parallel to the substrate surface on the substrate to be processed. And
The coating liquid film is formed by placing the substrate on which the coating liquid film is formed in a sealed reduced-pressure atmosphere, and passing an inert gas stream in a predetermined airflow passage direction parallel to the substrate surface on the substrate. A vacuum drying treatment section for drying
A substrate rotating mechanism that rotates the substrate by a desired rotation angle in a horizontal plane in order to change the direction of the substrate during the transfer of the substrate from the coating processing unit to the reduced-pressure drying processing unit ;
A substrate processing apparatus, wherein the coating scanning direction and the airflow passage direction are adjusted to either the opposite direction or the same direction with respect to the substrate. A vacuum drying apparatus for drying a coating liquid film formed on a substrate to be processed in a vacuum atmosphere,
A depressurizable chamber for accommodating the substrate therein;
An exhaust part for evacuating the chamber;
A placement unit for placing the substrate horizontally in the chamber;
In order to form an air flow of inert gas in a predetermined air flow passage direction in a processing space on the substrate placed on the mounting portion in the chamber, facing each other in a direction parallel to the air flow passage direction. First and second gas injection units provided on both sides of the placement unit;
The first gas injection unit is turned on while the second gas injection unit is in an off state, so that most of the inert gas injected from the first gas injection unit passes through the processing space in the first direction. The first gas flow forming mode flowing through the first gas injection unit, and the second gas injection unit is turned on while the first gas injection unit is off, and the inert gas injected from the second gas injection unit A reduced-pressure drying apparatus comprising: an airflow control unit that is switchable between a second airflow formation mode that mostly flows in the processing space in a second direction opposite to the first direction. The exhaust part is
In the chamber, the first exhaust port provided on the opposite side of the first gas injection unit with the mounting portion as the center, and the second exhaust port provided on the opposite side of the second gas injection unit An exhaust port,
When the first gas injection unit injects the inert gas, the exhaust passage on the second exhaust port side is closed, and the chamber is exhausted through the first exhaust port,
When the second gas injection unit injects the inert gas, the exhaust passage on the first exhaust port side is closed, and the inside of the chamber is exhausted via the second exhaust port.
The reduced-pressure drying apparatus according to claim 8 . An inert gas stream before entering the processing space is prevented from entering the lower space formed under the processing space across the substrate or the mounting portion, and the inert gas stream is flowed into the processing space. for guiding the, having a second air flow guide portion provided on the periphery of the mounting table, vacuum drying apparatus according to claim 8 or claim 9. The second airflow guide section is
A plate wall movable or displaceable in the vertical direction;
The decompression according to claim 10 , further comprising: a plate wall height adjusting unit for changing a height position of an upper end of the plate wall in accordance with a height position of the mounting unit in order to adjust a clearance of the processing space. Drying equipment. The exhaust part is
In the chamber, an exhaust port provided at the bottom of a lower space formed under the processing space across the substrate or the mounting portion,
A first plate wall portion that can be raised and lowered to selectively shield the lower space facing the first gas injection portion;
A first lifting mechanism for moving the first plate wall up and down;
A second plate wall that can be raised and lowered to selectively shield the lower space facing the second gas injection unit;
A second lifting mechanism for moving the second plate wall up and down,
When the first gas injection unit injects the inert gas, the first plate wall portion is raised above the bottom of the chamber to shield the lower space and the second plate wall portion to the chamber. Evacuate below the bottom of the
When the second gas injection unit injects an inert gas, the second plate wall portion is raised above the bottom of the chamber to shield the lower space, and the first plate wall portion is moved to the chamber. Evacuate below the bottom of the
The reduced-pressure drying apparatus according to claim 8 . The first air flow provided on both sides of the mounting portion in order to regulate the spread of the processing space in a horizontal direction orthogonal to the air flow passage direction and guide the air flow of the inert gas in the air flow passage direction. The reduced-pressure drying apparatus according to any one of claims 8 to 12 , comprising a guide part. A slit nozzle that discharges the coating liquid from the slit-shaped discharge port is moved relatively on the substrate to be processed in a coating scanning direction parallel to the substrate to form a coating liquid coating film on the substrate. And the process of
The substrate on which the coating liquid film has been formed is placed in a sealed reduced-pressure atmosphere, and an inert gas stream is passed through the substrate in a predetermined airflow passage direction parallel to the substrate, so that the coating liquid film is A second step of drying,
And said air flow passage direction and the coating scanning direction on so that fit to one of opposite directions or the same direction with respect to the substrate,
The substrate processing method , wherein the direction of the airflow passage direction is reversible, and the direction of the airflow passage direction in the second step is selected according to the direction of the coating scanning direction in the first step . A slit nozzle that discharges the coating liquid from the slit-shaped discharge port is moved relatively on the substrate to be processed in a coating scanning direction parallel to the substrate to form a coating liquid coating film on the substrate. And the process of
The substrate on which the coating liquid film has been formed is placed in a sealed reduced-pressure atmosphere, and an inert gas stream is passed through the substrate in a predetermined airflow passage direction parallel to the substrate, so that the coating liquid film is A second step of drying,
And said air flow passage direction and the coating scanning direction on so that fit to one of opposite directions or the same direction with respect to the substrate,
In order to select the direction of the airflow passage direction in the second step according to the direction of the coating scanning direction in the first step between the first step and the second step, A substrate processing method , wherein the substrate is rotated by a desired rotation angle in a horizontal plane .

Images