KR101344215B1 - Thin film deposition apparatus - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus. The thin film deposition apparatus according to the present invention includes a chamber, a substrate moving unit for moving a plurality of substrates in the chamber along a predetermined closed path having a pair of straight paths and curved paths, respectively, on a straight path in the chamber. A first gas supply unit supplying at least one of at least one kind of process gas and purge gas, a second gas supply unit provided on a curved path in the chamber, and supplying at least one of at least one kind of process gas and purge gas; And a substrate pull-out unit for introducing and extracting a substrate into the chamber.

Description

Thin film deposition apparatus

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film deposition apparatus, which can remarkably improve substrate throughput, provide uniform film deposition on a substrate surface, and provide a thin film of excellent quality, and also suppress particle generation. It relates to a thin film deposition apparatus that can improve the reliability of the product.

(CVD), plasma enhanced chemical vapor deposition (PECVD), and atomic layer deposition (MOCVD) as a deposition method for forming a thin film on a substrate such as a semiconductor wafer A technique such as ALD (atomic layer deposition) is used.

1 is a schematic diagram showing a basic concept of an atomic layer deposition method among substrate deposition methods. Referring to FIG. 1, the atomic layer deposition method injects a raw material gas including a raw material such as trimethyl aluminum (TMA) onto a substrate, and then inert purge gas injection such as argon (Ar) and exhaust of unreacted materials. Adsorbs a single molecular layer onto the substrate through the reaction mixture, and sprays a reaction gas containing a reactant such as ozone (O ₃ ) that reacts with the raw material, followed by inert purge gas injection and unreacted substances / byproducts An atomic layer (Al-O) is formed.

The thin film deposition apparatus used in the conventional atomic layer deposition method has a variety of methods depending on the method of injecting the source gas, the reaction gas, purge gas, etc. in a direction parallel to the substrate surface to be deposited. However, the thin film deposition apparatus used in the conventional atomic layer deposition method has a problem that can not satisfy both the high quality thin film and the substrate throughput. That is, when the thin film of excellent quality is achieved, there is a disadvantage that the throughput of the substrate is remarkably low. On the other hand, when the throughput of the substrate is improved, the quality of the thin film is deteriorated.

An object of the present invention is to provide a thin film deposition apparatus that can significantly improve the substrate throughput in order to solve the above problems. It is also an object of the present invention to provide a thin film deposition apparatus capable of increasing the substrate throughput and at the same time reducing the foot print of the apparatus or maintaining it similarly to the prior art. Furthermore, an object of the present invention is to provide a thin film deposition apparatus having a compatibility according to various environments while simplifying the configuration of a gas supply unit supplying a gas of the thin film deposition apparatus.

According to an aspect of the present invention, the chamber, a substrate moving unit for moving a plurality of substrates in the chamber along a predetermined closed path having a pair of straight paths and curved paths, respectively, and provided on a straight path in the chamber And a first gas supply unit supplying at least one of at least one kind of process gas and purge gas, and a second gas supply unit provided on a curved path in the chamber and supplying at least one of at least one kind of process gas and purge gas. And, a thin film deposition apparatus including a substrate pull-out unit for leading and withdrawing the substrate into the chamber may be provided.

Here, the substrate pull-out unit may be formed of a single device capable of performing the lead-in and pull-out of the substrate.

The substrate moving part includes a substrate support part for supporting the substrate, a connection member connected to and interlocked with the substrate support part, a pair of driving parts for moving the connection member along the straight path and the curved path, and the substrate support part. It may be made including a guide portion to support the movable.

The reaction chamber may include a chamber body having a predetermined space therein, and a chamber lid configured to seal an upper portion of the chamber body having an upper portion and an upper portion of the chamber body, wherein the first gas supply portion and the second gas supply portion may be disposed in the chamber. It may be provided in the lead.

The first gas supply unit and the second gas supply unit may include a cover for sealing an opening of the chamber lead, two or more gas supply modules provided in the opening to supply process gas or purge gas, and the gas supply module. It may be provided to include a plasma electrode supported by the chamber lead or the chamber body.

In this case, an exhaust channel for exhausting residual gas may be further included in at least one of the gas supply module and between the gas supply module and the chamber lead.

The second gas supply unit may include a plurality of gas supply blocks divided in a length direction, and may adjust the injection amount of the process gas injected through the respective gas supply blocks.

The gas supply block may further include a plurality of branch lines for supplying process gas to each of the gas supply blocks, and a flow control valve provided at the branch line to adjust the amount of process gas supplied to the gas supply blocks. .

The second gas supply unit may include a shower head having a shape corresponding to at least a portion of the curved area.

The shower head may include a process gas injection region for injecting process gas, a purge gas injection region for injecting purge gas, and an exhaust region for exhausting residual gas.

In this case, the process gas injection region may be formed in a shape having a larger area toward the outer side from the radial direction of the curved path.

The purge gas injection zone may be provided to surround the process gas injection zone.

Alternatively, the exhaust region may be provided to surround the process gas injection region.

Alternatively, at least a portion around the process gas injection zone may be surrounded by the purge gas injection zone, and the remaining part may be surrounded by the exhaust zone.

Meanwhile, the shower head may include only a purge gas injection area for injecting purge gas to remove particles.

According to another aspect of the present invention, a chamber, a substrate moving unit for moving the substrate along a predetermined closed path having a straight path and a curved path to perform the deposition process of the substrate in the chamber, and a straight path in the chamber A first gas supply unit configured to supply at least one process gas and purge gas, and provided on a curved path in the chamber to supply at least one process gas and purge gas, the radially inner side of the curved region In the thin film deposition apparatus including a second gas supply for injecting more process gas to the substrate toward the outside may be provided.

According to still another aspect of the present invention, in a thin film deposition apparatus having a closed path consisting of a straight path and a curved path, the thin film deposition apparatus is provided on a straight path in the chamber and supplies a process gas and a purge gas to perform a deposition process. A thin film deposition apparatus may include a gas supply unit and an auxiliary gas supply unit provided on a curved path in the chamber and supplying a purge gas to prevent particles.

According to the present invention having the above-described configuration, substrate throughput can be improved by supplying a process gas and / or a purge gas by a plurality of gas supply units while simultaneously moving a plurality of substrates along a movement path including a straight path and a curved path It can be remarkably improved.

In addition, in the present invention, the substrate is uniformly deposited on the surface of the substrate by supplying the gas while moving along the linear path, thereby providing a thin film of excellent quality.

Furthermore, in the present invention, when the substrate is introduced into or taken out of the chamber of the thin film deposition apparatus, the substrate can be drawn in and taken out by one apparatus, thereby simplifying the configuration and reducing the foot print.

In addition, the gas supply module is provided with a gas supply module that can be attached and detached without integrally providing the structure of the gas supply portion, so that the gas supply module is appropriately provided in accordance with the gas supply environment. Therefore, it can have compatibility with various gas supply environments.

In addition, the gas supply unit according to the present invention may include a plasma electrode to provide radicals to improve the quality of the thin film and reduce the deposition time. In particular, the plasma electrode can be supported by the chamber lid to simplify the configuration. In addition, in case of disassembling the gas supply unit for maintenance later, only the necessary part is to be disassembled, and the plasma electrode is supported by the chamber lid to be disassembled only when necessary. As a result, it becomes possible to remarkably reduce the time and process for maintenance of the gas supply unit.

In addition, since the gas supply part of the thin film deposition apparatus according to the present invention is provided on both a straight path and a curved path, the gas supply unit may perform a deposition process on a curved path or may be used as a purge gas injection for suppressing particle generation. .

1 is a schematic diagram showing a basic concept of atomic layer deposition among substrate deposition methods
2 is a plan view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention
3 is a perspective view showing a thin film deposition apparatus according to an embodiment of the present invention
4 is a cross-sectional view taken along line III-III of FIG.
FIG. 5 is a perspective view illustrating a substrate moving part of a thin film deposition apparatus according to an exemplary embodiment.
FIG. 6 is an enlarged perspective view of the first gas supply unit in FIG. 3. FIG.
FIG. 7 is a cross-sectional view taken along line VI-VI of FIG. 6.
8 is a cross-sectional view of a first gas supply unit according to another embodiment for solving the above-described problem.
9 is a cross-sectional view illustrating an example in which an exhaust channel is first provided to a first gas supply unit along a moving direction of a substrate;
10 and 11 are a perspective view and a cross-sectional view showing a configuration in which the plasma electrode is supported by the chamber body
12 is a configuration diagram showing various combinations of gas supply sequences
13 is a configuration diagram showing the configuration of a second gas supply unit according to another embodiment of the present invention
FIG. 14 is an exploded perspective view showing a thin film deposition apparatus in a case where the second gas supply unit includes a shower head; FIG.
15 to 19 are partial bottom views illustrating a case in which the showerhead of FIG. 14 has various shapes.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Like numbers refer to like elements throughout.

2 is a plan view showing the entire configuration of a substrate processing apparatus 1000 according to an embodiment of the present invention, Figure 3 is a perspective view showing a thin film deposition apparatus according to an embodiment of the present invention, Figure 4 is a view It is sectional drawing along the III-III line | wire.

2 to 4, the substrate processing apparatus 1000 according to an exemplary embodiment of the present invention may include a thin film deposition apparatus 100 that performs a process such as a deposition operation on a substrate W, and a vacuum or atmospheric pressure state. It may be provided with a load lock chamber 700 that can be converted to a plurality of boats and a plurality of boats 810 on which the substrate (W) to be deposited is loaded, and a plurality of boats 820 to load the completed substrate.

Here, the thin film deposition apparatus 100 is largely accommodated in the substrate (W) therein is a chamber 110 and the plurality of substrates (W) in the chamber 110, the deposition operation is performed a pair of linear paths respectively A substrate moving part 180 for moving along a predetermined closed path having an L and a curved path C, and a linear path L in the chamber 110, and at least one process gas and purge. The first gas supply unit 200 for supplying at least one of the gas, and the second gas supply unit provided on the curved path (C) in the chamber 110, supplying at least one of one or more types of process gas and purge gas And a substrate pull-out unit 600 for drawing the substrate W into and out of the chamber 110.

Although the substrate processing apparatus 1000 according to the present embodiment is assumed to have two chambers 110, it is not limited thereto.

When the substrate W is supplied to the chamber 110 of the thin film deposition apparatus 100, a first robot arm (not shown) inside the load lock chamber 700 loads the substrate in the boat 810. Transfer inside Subsequently, the load lock chamber 700 is converted into a vacuum state, and the second robot arm 610 of the substrate pull-out unit 600 receives the substrate and supplies the substrate to the chamber 110. When the substrate is taken out of the chamber 110, the process proceeds in the reverse order.

The chamber 110 provides a space in which various components may be provided to accommodate the substrate W therein so as to perform a deposition operation on the substrate. Furthermore, it provides an environment in which a substrate processing operation such as a deposition operation or the like can be performed by keeping the inside in a vacuum state by a vacuum equipment such as a pump (not shown) for exhausting air inside.

Specifically, the chamber 110 may include a chamber body 130 having a predetermined space therein and an upper portion of the chamber body 130, and a chamber lid 120 opening and closing the opened upper portion of the chamber body 130.

One side of the chamber body 130 has an opening 134 that the substrate (W) is drawn into and out of the chamber 110, and a connector 132 for sealing the substrate inlet / out portion (600) and the opening (134). It can be provided.

The openings 134 may be provided in the chamber body 130 in pairs. As shown in FIG. 2, when the two substrates 110 are connected to one substrate drawing-out unit 600 by providing two chambers 110 in the substrate processing apparatus 1000, productivity and compatibility are increased. For sake.

That is, regardless of the direction of the chamber 110 connected to the substrate pull-out unit 600, when manufacturing the chamber 110, a pair of openings 134 may be provided to improve productivity. Further, when connecting the chamber 110 to the substrate draw-out part 600 and when it is necessary to change the connection of the chamber 110 during the operation, the substrate draw-out part 600 in the other opening 134. You can increase the compatibility by connecting.

In addition, in the present exemplary embodiment, the substrate inlet / outlet unit 600 is connected to the chamber 110 to introduce the substrate into the chamber 110 or to draw out the substrate W having the deposition completed to the outside of the chamber 110. Done.

When the substrate supporting unit 150 moves by the substrate moving unit 180 as described later, the substrate on which the deposition is completed is moved by the second robot arm 610 of the substrate receiving and feeding unit 600 through the opening 134 Withdraw. The substrate requiring the deposition is supplied to the substrate support 150 inside the chamber 110 through the opening 134 by the second robot arm 610 of the substrate inlet /

As described above, in the present embodiment, the substrate W is drawn in and drawn out by a single device. Therefore, the components can be reduced and the installation area can be reduced as compared with the case where a separate device, for example, a substrate inlet and a substrate outlet is separately provided for the inlet and outlet of the substrate W. FIG. In addition, since the components are reduced, it has the advantage of easy maintenance in the future.

Meanwhile, the chamber lead 120 of the chamber 110 includes a first gas supply unit 200 and a second gas supply unit 200a for supplying at least one of a first process gas, a second process gas, and a purge gas. This will be described in detail later.

The substrate moving part 180 may be provided in the chamber body 130 of the chamber 110 to move the substrate W along a predetermined path. The substrate moving part 180 has a straight path L for moving the substrate support 150 supporting the substrate W along a predetermined straight line and a curved path for moving the substrate support 150 along a predetermined curve ( C), through which the substrate moving part 180 moves the substrate supporting part 150 along a predetermined closed loop.

Here, the menopause path may be defined as a path passing through the starting point again while moving along a predetermined path from the starting point. To this end, the substrate transfer part 180 according to the present embodiment can move the substrate support part 150 along a pair of straight path L and a curved path C, respectively.

That is, a pair of linear paths L are arranged substantially parallel to each other at a predetermined interval, and a pair of curved paths C are connected between the linear paths L. Here, the curved path C may be a semicircular shape having a predetermined radius, or may be any curved shape other than a straight shape.

Here, the first gas supply part 200 is provided along a straight path L of the substrate moving part 180. When the first gas supply part 200 is provided in the straight path L, the substrate W is seated on the substrate support part 150 and the process gas is supplied along the straight path L. Since the speeds of all the regions are constant, the deposition may be uniformly performed on the surface of the substrate (W).

In addition, the second gas supply unit 200a may be provided along the curved path C of the substrate moving unit 180 to perform an additional deposition process on the curved path C, thereby improving the substrate processing speed. Can be.

The second gas supply unit 200a may be configured to be used for supplying an inert gas for removing particles instead of a deposition process, and details thereof will be described later.

On the other hand, in the present embodiment, the substrate pull-out unit 600 may be provided in the curved path (C). In this case, the opening 134 described above may be provided in the chamber body 130 adjacent to the curved path (C).

5 is a perspective view illustrating the configuration of the substrate moving unit 180 in more detail.

1 to 5, the substrate moving part 180 includes a pair of driving parts for moving the belt 190 and the belt 190 along the straight path and the curved path to which the substrate support part 150 is connected. 182 and 184 and a guide portion 160 for supporting the substrate support 150 to be movable.

The connection member 190 may be formed of a belt, and the driving units 182 and 184 may be formed of a pulley.

A pair of driving units 182 and 184 are provided at an inner base of the chamber body 130 at a predetermined distance, and a connection member 190 is provided to surround the pair of driving units 182 and 184. One of the pair of driving units is connected to a motor (not shown) to serve as a driving pulley 182 for moving the connecting member 190, and the other pulley drives and the connecting member 190 of the driving pulley 182. By acting as a driven pulley 184 to rotate together.

The substrate support part 150 supporting the substrate W is connected to the connection member 190 to move together with the connection member 190. In detail, the substrate support part 150 includes a susceptor 152 on which the substrate W is seated, a lower support part 156 provided below the susceptor 152 and provided with a roller 158 to be described later. The lower support part 156 and the susceptor 152 may be connected to a connection part 154 connected to the connection member 190 at the same time.

The susceptor 152 has a substrate W mounted thereon, and a groove corresponding to the substrate W in the upper part of the susceptor 152 to prevent movement of the substrate W during the movement of the substrate support part 150. (153, see FIG. 3). The connection portion 154 is connected vertically downward from one end of the susceptor 152.

On the other hand, the substrate support 150 is moved in conjunction with the movement of the connection member 190, but while the substrate support 150 is moved while forming the movement path of the substrate support 150 to guide the substrate support. It may be provided with a guide portion 160.

The guide unit 160 may be implemented in various forms. In this embodiment, the guide unit 160 is provided as an LM guide provided under the substrate support unit 150. That is, the LM guide is provided at the base inside the chamber body 130, and the substrate support 150 is moved along the LM guide while being supported by the LM guide.

Meanwhile, as described above, the substrate moving part 180 moves the substrate support part 150 along a straight path and a curved path, and the path of the substrate support part 150 is substantially formed by the guide part 160. do.

Accordingly, in this embodiment, the guide portion 160 is provided to include a straight path and a curved path, and specifically, each of the guide portions 160 is configured to include a pair of a straight path L and a curved path C, respectively. A pair of linear paths L are provided at predetermined intervals, and the configuration in which both ends of the linear path L are connected by the curved path C is as described above.

The substrate support part 150 may include a roller 158 corresponding to the guide part 160 so that the substrate support part 150 moves along the guide part 160. In detail, the lower support part 156 of the substrate support part 150 includes a guide part 160, that is, a roller 158 that can move along the LM guide.

Therefore, when the substrate support part 150 moves in conjunction with the connection member 190, the substrate support part 150 is supported by the guide part 160 and moves along the guide part 160. As a result, the connection member 190 provides the power (force) for the substrate support 150 to move, the guide portion 160 supports the substrate support 150 to move the path of the substrate support 150 Will be provided.

On the other hand, a connection portion 154 is vertically connected to one end of the susceptor 152 downward. The connection part 154 is connected to the connection member 190 to move together with the connection member 190 when the connection member 190 is moved. The connection part 154 is preferably detachably connected to the connection member 190. This is because the substrate support 150 may be separated from the connection member 190 for the maintenance of the substrate support 150.

3 and 4, a lower portion of the substrate support 150 may be provided with a heating unit 170 for heating the substrate W. Referring to FIGS. The heating unit 170 is provided at a lower portion spaced apart from the susceptor 152 for supporting the substrate W to heat the substrate W.

Specifically, the heating unit 170 includes a plurality of heating plates 172 provided along the movement path of the substrate supporting unit 150. The heating plate 172 is provided at a predetermined distance from the susceptor 152 that supports the substrate W to heat the substrate W.

In this embodiment, the substrate supporter 150 includes a susceptor 152, a connection part 154 vertically connected downward from one end of the susceptor 152, and a lower support part 156. That is, the cross section of the substrate support part 150 has a 'c' shape as shown in FIG. 3. The heating plate 172 is provided in a space between the susceptor 152 and the lower holding portion 156 to prevent interference between the substrate supporting portion 150 and the heating plate 172 during movement of the substrate supporting portion 150 do.

In the chamber 110, a substrate receiving part 140 for receiving and drawing out the substrate W may be provided. The substrate receiving portion 140 receives the substrate W supplied into the chamber 110 by the substrate inlet / outlet portion 600 and places the substrate W on the substrate supporting portion 150, The substrate W can be drawn out to the outside of the chamber 110 by separating the substrate W from the substrate W. [ For this purpose, the substrate receiving portion 140 is preferably provided adjacent to the substrate inlet / outlet portion 600. Therefore, the substrate receiving unit 140 is provided in the curved path C.

The substrate receiving portion 140 includes a plurality of receiving pins 142 that are vertically movable and a driving portion 144 that moves the receiving pins 142 up and down. The receiving pins 142 are plurally provided to support the substrate W, and are formed of, for example, three. In FIG. 2, reference numeral 146 denotes a through hole provided in the heating plate 172 so that the receiving pin 142 can move up and down.

That is, in the course of movement of the substrate supporting part 150, the curved path C is provided with the substrate drawing-out part 600, and the substrate drawing pin 142 is heated The plate 172 has a through hole 146 through which the substrate receiving pin 142 can move. Of course, the number of the through holes 146 is formed corresponding to the number of the substrate receiving pins 142.

Meanwhile, as described above, the first gas supply unit 200 may be provided along the straight path L, and the second gas supply unit 200 ㅁ may be provided in the curved path C. 2 and 3, the first gas supply unit 200 is shown as being provided with three along the straight path (L), but this is only one example, the length of the straight path (L), of the first gas supply unit 200 It can be adjusted according to the width.

In addition, although the second gas supply unit 200a is shown in the case where two are provided along the curved path (C), this is also an example of the number installed according to the curvature, radius, length, etc. of the curved path (C) appropriately It is adjustable.

FIG. 6 is an enlarged perspective view of the gas supply unit 200 in FIG. 3, and FIG. 7 is a cross-sectional view taken along the line VI-VI of FIG. 6, showing a specific configuration of the gas supply unit 200.

In the present embodiment, since the first gas supply unit 200 and the second gas supply unit 200a have the same structure, the configuration of the first gas supply unit 200 will be described.

6 and 7, the first gas supply unit 200 is provided above the chamber 110, and specifically, provided in the chamber lead 120. An opening 122 is provided in the chamber lead 120, and the gas supply unit 200 is provided in the opening 122.

The first gas supply unit 200 includes a cover 205 for sealing an opening of the chamber lead 120, and provided in the opening 122 to supply a first process gas (or 'source gas') or purge gas. The gas supply module 300 and the gas supply module 300 includes a plasma electrode 350 provided between the chamber lead 120 or the chamber body 130.

The cover 205 is provided on an upper portion of the chamber lead 120, and serves to seal the opening of the chamber lead 120. Accordingly, although not shown in the drawings, a ring (not shown) for sealing may be provided between the cover 205 and the chamber lid 120. The cover 205 may be provided with a process gas, purge gas, or various lines for the gas to be exhausted, to the gas supply module 300, which will be described in detail later.

In detail, the cover 205 may include a first supply line 210 for supplying a first process gas and / or purge gas. The first supply line 210 is connected to a first process gas source (not shown) and / or a purge gas source (not shown) to supply the first process gas and / or purge gas to the gas supply module 300 .

Further, the cover 205 may further include a second supply line 220 for supplying a second process gas (or 'reaction gas'). The second supply line 220 may be connected to a second process gas source (not shown) to supply the second process gas toward the plasma electrode 350.

The cover 205 may further include an exhaust line 230 for exhausting the process gas and / or the purge gas supplied from the gas supply module 300. The exhaust line 230 is connected to a pumping unit (not shown) to exhaust the residual gas inside the chamber 110 by pumping the pumping unit.

The first gas supply unit 200 is provided with a gas supply module 300 for supplying a first process gas and / or purge gas. The gas supply module 300 has a supply channel 212 through which the first process gas and / or purge gas travels. In this embodiment, the gas supply module 300 is seated and fixed at the edge of the opening 122 of the chamber lid 120. The gas supply module 300 is spaced apart from the adjacent gas supply modules by a predetermined distance to form a space therebetween.

The provision of the gas supply module 300 for supplying the process gas and / or the purge gas as in the present embodiment has an advantage that various types of gas can be supplied. That is, when the gas supply unit is formed of one member as in the related art, there is a problem in that the gas supply unit needs to be replaced as a whole when the type of the substrate, the number of gases supplied by the customer, the order of the gas, etc. are changed.

However, in the present embodiment, the gas supply module 300 is detachably provided, so that the number of the gas supplied by adjusting the number of the gas supply module 300 provided in the opening 122 of the chamber lid 120 is appropriately adjusted. It is possible to adjust. Therefore, the first gas supply unit 200 according to the present embodiment can easily increase the number of the gas supply module 300 even if the number of the gas to be supplied and the order of the gas is changed, thereby providing an advantage of excellent compatibility compared to the conventional art. To have.

In the present exemplary embodiment, the first gas supply unit 200 having two gas supply modules 300 on both sides of the plasma electrode 350 is illustrated, but this is only an example, and the gas supply module 300 of the gas supply module 300 is shown. The number can be adjusted accordingly. It is also possible to provide the same number of gas supply modules 300 on both sides of the plasma electrode 350 or to provide different numbers of gas supply modules 300 on both sides of the plasma electrode 350 .

As described above, the cover 205 is connected to the first supply line 210 for supplying the first process gas and / or the purge gas. The first supply line 210 extends into the interior of the cover 205 to supply the first process gas and / or purge gas to the supply channels 212 of the gas supply module 300.

Although not shown in the drawing, the first supply line 210 may include a plurality of supply holes or supply slits of a predetermined length for supplying an internal gas to the outside. The first supply line 210 may be connected to the supply channel 212 of the direct gas supply module 300 or may be connected to the supply channel 212 of the cover 205, 206 may be provided. That is, the supplemental channel 206 extends along the cover 205 at the first supply line 210 and communicates with the supply channel 212. Therefore, the gas supplied from the first supply line 210 is supplied through the auxiliary channel 206 and the supply channel 212.

On the other hand, when the first process gas is supplied through the gas supply module 300, it is preferable that the first process gas is not directly exhausted from the end of the supply channel 212 and a sufficient deposition time is maintained at the substrate surface.

This is because the more the process gas has a sufficient deposition time at the substrate surface, the more favorable the deposition. It is also preferable that the process gas is uniformly diffused and supplied toward the substrate W when the process gas is supplied. This is because, when the deposition process is performed on the substrate W, it is advantageous for uniform deposition thickness that the process gas is uniformly diffused and supplied on the surface of the substrate W. [

Thus, in this embodiment, the gas supply module 300 is provided with a confinement portion 315 that allows the gas to diffuse uniformly at the end of the supply channel 212 and allows the process gas to remain sufficiently at the surface of the substrate W .

The confining unit 315 is provided at the end of the gas supply module 300 so that the gas supplied by the supply channel 212 can stay for a predetermined time without being directly exhausted (hereinafter, referred to as 'reaction space'). It can be defined as).

That is, the step portion 312 may be provided to form a reaction space at the end of the gas supply module 300 as shown in FIG. Accordingly, the reaction space having a wider width than the width of the supply channel 212 is formed to form the limiting part 315.

Accordingly, the process gas supplied through the supply channel 212 is diffused in the reaction space defined by the defining unit 315 and supplied to the surface of the substrate W. Further, the process gas is divided by the defining unit 315, The substrate is brought into contact with the substrate for a sufficient time. Here, the step portion 312 forming the defining portion 315 has been described as an example, and can be implemented in various forms.

Meanwhile, various process gases are supplied into the chamber 110, and when such process gases remain inside the chamber 110, deposition may occur in unwanted regions other than the substrate by mutual reaction.

Such unnecessary deposition requires a frequent cleaning operation of the thin film deposition apparatus 100 when the thin film deposition apparatus 100 is used for a long time, which causes a lot of time and cost in maintenance. Therefore, the thin film deposition apparatus 100 may include exhaust means for exhausting the gas remaining in the chamber 110. The thin film deposition apparatus 100 according to the present embodiment includes an exhaust means in the first gas supply unit 200.

In detail, the first gas supply unit 200 includes two or more gas supply modules 300, and at least one of the gas supply modules 300 is spaced apart from the other by a predetermined distance.

Thus, a space between the gas supply modules 300 forms an exhaust channel 332 for exhausting the residual gas. That is, in this embodiment, a space is provided between the gas supply modules for supplying the process gas and / or the purge gas, instead of forming the exhaust channel by providing a separate member for forming the exhaust channel, as an exhaust channel .

Therefore, in the present embodiment, when manufacturing the gas supply unit, the number of components and the manufacturing process can be reduced, so that the cost and time can be significantly reduced when assembling the thin film deposition apparatus. The exhaust channel 332 is connected to an exhaust line 230 provided in the cover 205 to exhaust the residual gas to the outside by pumping the pumping unit.

Meanwhile, unnecessary vapor deposition may occur in the exhaust channel 332 due to the reaction between the process gases when the process gas capable of reacting with each other is exhausted together with the gas exhausted through the exhaust channel 332. That is, deposition may occur outside the gas supply module 300. This prevents the exhaust gas from being smoothly exhausted, and thus requires a cleaning operation.

However, when the cleaning operation is performed to remove the gas supply module 300 to perform the cleaning operation requires a step of reassembling. This increases the cost, process and time of assembling, which is a problem. Hereinafter, a gas supply unit according to another embodiment will be described in order to solve the above problems.

8 shows a gas supply unit according to another embodiment for solving the above-described problem. This embodiment has a difference in that it has an exhaust member 330 to form the exhaust channel 332 compared with the embodiment of FIG. Hereinafter, the differences will be mainly discussed.

Referring to FIG. 8, an exhaust member 330 is provided in a space between the pair of gas supply modules 300, and the exhaust member 330 has an exhaust channel 332 therein. The exhaust channel 332 forms a passage through which the remaining process gas or purge gas is exhausted.

Accordingly, even if evaporation occurs due to the reaction of the process gas exhausted through the exhaust channel 332, the exhaust member 330 is separated to perform the cleaning operation, thereby reducing the time and cost required for reassembling. This is because, when the exhaust member 330 is reassembled, the exhaust member 330 can be closely attached to the adjacent gas supply module 300 and assembled easily.

Meanwhile, in FIGS. 7 and 8, the pair of gas supply modules 300 are provided at both sides of the plasma electrode 350, respectively, and the exhaust channel 332 is provided between the pair of gas supply modules 300. This example is shown. However, the exhaust channel 332 may be provided before the gas supply along the direction in which the substrate W moves.

That is, the exhaust gas may be removed prior to supplying the process gas and / or the purge gas to remove the residual gas on the substrate. 9 illustrates an example in which the exhaust channel 332 is first provided in the gas supply unit along the moving direction of the substrate. In the following, it is assumed that the substrate moves from the right side to the left side of the drawing when the substrate moves below the gas supply unit.

Referring to FIG. 9, the gas supply module 300 (the gas supply module located at the far right in FIG. 8) provided adjacent to the chamber lead 120 is provided to be spaced apart from the chamber lead 120 by a predetermined distance. An exhaust member 330 is provided between the module 300 and the chamber lid 120.

As a result, before the process gas and / or purge gas is supplied along the moving direction of the substrate, the remaining gas on the surface of the substrate may be exhausted to perform a more uniform deposition operation. In the meantime, although the gas supply unit of the present embodiment is shown to include the exhaust member 330 forming the exhaust gas channel 332 at the edge, the exhaust member 330 may be omitted. That is, it goes without saying that the exhaust channel 332 may be formed as a space between the chamber lid 120 and the gas supply module 300.

Hereinafter, a plasma electrode for supplying a plasma during a deposition operation will be described in detail with reference to the drawings.

Referring to FIG. 7, the first gas supply unit 200 according to the present embodiment includes two or more gas supply modules 300, and the plasma electrode 350 is provided between the gas supply modules 300.

Specifically, the plasma electrode 350 is supported by the chamber lid 120. That is, the plasma electrode 350 is not supported by the adjacent gas supply module 300 or the cover 205 but is supported by the chamber lead 120. The gas supply module 300 is detachably mounted on the chamber lid 120 and is not suitable for supporting the plasma electrode 350.

The cover 205 is removed when the gas supply unit 200 is maintained and repaired. Therefore, if the plasma electrode 350 is supported on the cover 205, it is troublesome to detach the plasma electrode 350. Accordingly, in this embodiment, when the plasma electrode 350 is provided, the plasma electrode 350 is supported by the chamber lid 120.

An electrode supporting part 360 of an insulating material is provided on the chamber lead 120 to support the plasma electrode 350 and the plasma electrode 350 is mounted on the electrode supporting part 360. Although not shown in the drawing, power is supplied to the plasma electrode 350 through the chamber lid 120 and the electrode support 360. In addition, at least one of the gas supply modules 300 adjacent to the plasma electrode 350 is grounded to serve as a ground electrode.

The cover 205 of the gas supply unit 200 further includes a second supply line 220 for supplying a second process gas for generating plasma. The second process gas is supplied from the second supply line 220 toward the plasma electrode 350.

In this case, dispersion means may be provided so that the second process gas is uniformly dispersed around the plasma electrode. The dispersion means may be provided in the plasma electrode 350 and may include a dispersion unit 355 provided in the plasma electrode 350.

The dispersion unit 355 is provided on the plasma electrode 350 toward the second supply line 220 to which the second process gas is supplied, and serves as a so-called 'diffuser' for dispersing the second process gas. . Specifically, when the cross section of the dispersing unit 355 is viewed, the width of the upper portion is narrower than the width of the lower portion.

Therefore, the narrow upper portion is provided to face the second process gas so that the second process gas is uniformly distributed to both sides of the plasma electrode 350 along the dispersion unit 355. The dispersion unit 355 may be formed integrally with the plasma electrode 350 or may be formed as a separate member.

Although the plasma electrode 350 is supported by the chamber lid 120 in the above embodiment, the plasma electrode 350 may be supported by the chamber body 130. 10 and 11 illustrate a configuration in which the plasma electrode 350 is supported by the chamber body 130. Hereinafter, differences from the above-described embodiment will be mainly described.

10 and 11, an electrode support 360 supporting the plasma electrode 350 is connected to the chamber body 130. More specifically, the electrode supporting portion 360 includes a connection portion 362 selectively connected to one side of the chamber body 130, and a support bar 364 supporting the plasma electrode 350 and bent at the connection portion 362 do. The electrode supporting portion 360 is made of an insulating material, which is the same as the above-described embodiment.

As shown in FIG. 10, the electrode support part 360 is assembled toward the inside of the chamber 110 from the outside of the chamber body 130 or outward from the inside of the chamber body 130. Therefore, only the connecting portion 362 is visible outside the chamber body 130. The plasma electrode 350 may be previously seated on the support bar 364 when the electrode support 360 is assembled to the chamber body 130. That is, the plasma electrode 350 is mounted on the electrode supporting part 360, and the electrode supporting part 360 is connected to the chamber body 130. Although not shown in the drawing, a gasket or the like may be provided on the contact surface or the like for sealing between the connection portion 362 and the chamber body 130. [ Further, although not shown in the figure, power is supplied to the plasma electrode 350 through the chamber body 130 and the electrode support 360. [ At least one of the gas supply modules 300 adjacent to the plasma electrode 350 is grounded to serve as a ground electrode. Preferably, all of the gas supply modules 300 located on both sides of the plasma electrode 350 are grounded, And serves as an electrode.

As a result, the plasma electrode 350 is said to be supported by the chamber 110, and is specifically supported by the chamber lead 120 or supported by the chamber body 130.

On the other hand, the order of the first process gas (source gas), the second process gas (reaction gas) and the purge gas supplied from the gas supply unit 200 according to the above embodiments can be appropriately adjusted.

12 illustrates various combinations of gas supply sequences. In FIG. 12, 'S' means a source gas, that is, a first process gas, 'P' means a purge gas, and 'R' means a reaction gas, that is, a second process gas. Further, arrows from the bottom to the top show the exhaust flow by the exhaust channel. In each of the drawings shown in FIG. 12, the substrate is described as moving from right to left of the drawing.

FIG. 12A illustrates the gas supply order and the exhaust order by the gas supply unit 200 according to FIG. 7 described above. That is, as the substrate W moves, the first process gas supply S, the exhaust gas, the purge gas supply P, the reaction gas supply R, the purge gas supply P, the exhaust gas, and the purge gas supply P The deposition is performed in the order of.

On the other hand, Figure 12 (b) shows the gas supply order and the exhaust order by the gas supply unit 200 according to FIG. 9 described above. That is, as the substrate W moves, the exhaust gas, the first process gas supply S, the exhaust gas, the purge gas supply P, the reactive gas supply R, the purge gas supply P, P), and exhaust are performed in this order. There is a difference in that it further includes the exhaust process at the beginning and the end along the moving direction of the substrate compared to the sequence of FIG.

On the other hand, Figure 12 (c) shows a gas supply order and exhaust order according to another embodiment. That is, as the substrate W moves, the deposition is performed in the order of the first process gas supply S, exhaust, purge gas supply P, reactive gas supply R, exhaust, and purge gas supply P . The adjustment of the gas supply sequence and the exhaust sequence can be adjusted by a combination of the gas supply module 300 and the exhaust member 330 as described above.

12 (d) shows a gas supply sequence and an exhaust sequence according to another embodiment. That is, as the substrate W moves, the deposition is performed in the order of exhaust, first process gas supply S, exhaust gas, purge gas supply P, reactive gas supply R, exhaust gas, and purge gas supply P . There is a difference in that it further includes an exhaust process initially along the moving direction of the substrate as compared with the procedure of FIG.

12 (e) shows a gas supply sequence and an exhaust sequence according to another embodiment. That is, as the substrate W moves, the deposition is carried out in the order of the first process gas supply S, exhaust gas, purge gas supply P, exhaust gas, reactive gas supply R, exhaust gas and purge gas supply P . Compared with the sequence of FIG.

12 (f) shows a gas supply sequence and an exhaust sequence according to another embodiment. That is, as the substrate W moves, the exhaust gas, the first process gas supply S, the exhaust gas, the purge gas supply P, the exhaust gas, the reaction gas supply R, the exhaust gas, the purge gas supply P, Deposition is performed in this order. Compared with the sequence of FIG.

Fig. 12G shows a gas supply sequence and an exhaust sequence according to another embodiment. That is, as the substrate W moves, the purge gas supply P, the exhaust, the first process gas supply S, the exhaust, the purge gas supply P, the reaction gas supply R, the exhaust, and the purge gas supply ( Deposition is performed in the order of P). Compared with the procedure of FIG.

12 (h) shows a gas supply sequence and an exhaust sequence according to another embodiment. As the substrate W moves, the first process gas supply S, the exhaust gas, the purge gas supply P, the purge gas supply P, the reactive gas supply R, the exhaust gas, the purge gas supply P, , And purge gas supply (P). There is a difference in that the purge gas is supplied two times when the purge gas is supplied along the moving direction of the substrate as compared with the procedure of FIG. Therefore, in this embodiment, by increasing the number of times the purge gas is supplied, it is possible to more reliably remove the remaining process gas, thereby preventing the process gas from mixing.

The matters regarding the gas supply units 200 and 200a described so far have been described by taking an example in which the first gas supply unit 200 and the second gas supply unit 200a have the same structure.

However, since the second gas supply unit 200a is located on the curved path C, the movement path of the substrate is formed in a circular shape so that the rotational angular velocity of the center and the outer circle of the circle is different. Therefore, the deposition of the substrate region adjacent to the center of the circle and the substrate region adjacent to the outer circle of the circle proceeds differently, which may cause a problem that the thickness of the deposition varies in one substrate.

The structure of the second gas supply unit for solving this problem will be described below.

FIG. 13 is a diagram illustrating a configuration of a second gas supply unit according to another exemplary embodiment of the present disclosure.

Referring to FIG. 13, the second gas supply unit 200b includes a plurality of gas supply blocks 201b divided in the longitudinal direction, and adjusts the injection amount of the process gas injected through the gas supply blocks 201b. It may be configured to enable.

That is, the second gas supply unit 200b is divided into a plurality of gas supply blocks 201b in the longitudinal direction by a partition wall (not shown), or the gas supply blocks 201b are assembled as a separate module from the beginning. 2 gas supply unit (200b) can be completed.

Of course, the cross-sectional structure of the second gas supply unit 200b may be configured in the same manner as the first gas supply unit described with reference to FIGS. 7 to 9, but is differentiated from the first gas supply unit in that it is blocked in the longitudinal direction.

The supply line 210b may be connected to supply the process gas or the purge gas to the second gas supply unit 200b, and the process gas may be supplied to each gas supply block 201b separated from the supply line 210b. A plurality of branch lines 211b connected to each gas supply block 201b may be provided.

In addition, the branch line 211b may be provided with a flow control valve 213b for controlling the amount of process gas supplied to each of the gas supply blocks 201b.

By configuring the second gas supply unit 200b as described above, the flow rate of the process gas supplied to each gas supply block 201b may be adjusted through the flow control valve 213b to adjust the amount of gas injected to the substrate.

Therefore, where the substrate movement is fast, such as the outside of the curved path (C), the gas injection amount is increased, and where the substrate movement is slow, such as the inside of the curved path (C), the gas injection amount is made small and deposited on the curved path (C). Even when the process is performed, there is an advantage that a uniform film quality can be obtained.

FIG. 14 is an exploded perspective view illustrating a thin film deposition apparatus in a case where the second gas supply unit is formed of a shower head, and FIGS. 15 to 19 are partial bottom views illustrating a case in which the shower head of FIG. 12 is formed in various forms.

14 to 19, the second gas supply unit of the thin film deposition apparatus 100 according to the exemplary embodiment may include a shower head 200c having a shape corresponding to at least a portion of the curved area C. FIG. Can be. Since the configuration other than the second gas supply unit formed of the shower head 200c is the same as in the previously described embodiment, detailed descriptions thereof will be omitted.

The shower head 200c includes a process gas injection region 240c for injecting process gas, a purge gas injection region 270c for injecting purge gas, and an exhaust region 280c for exhausting residual gas. Can be done.

Here, the process gas injection region 240c may include a first process gas injection region 250c and a second process gas injection region 260c.

In this case, the process gas injection region 240c may have a shape having a larger area from the inner side of the curved path C toward the outer side. That is, the process gas injection region may be formed to correspond to the curved path (C) shape to form a substantially fan-shaped shape.

As such, the process gas injection zone 240c has a fan shape corresponding to the curved path C, so that more process gases can be supplied to the outer shell even when the rotational angular velocity of the center and the outer shell of the curved path C are different. Uniform film quality can be obtained during the process.

Looking at the specific configuration of the shower head (200c), as shown in Figure 15, the first process gas injection region is provided with a plurality of first process gas injection hole (252c) into which the first process gas (or source gas) is injected 250c is provided, and then a purge gas injection region 270c having a plurality of purge gas injection holes 272c is provided.

Subsequently, a second process gas injection region 260c including a plurality of second process gas injection holes 262c into which the second process gas (or reactive gas) is injected is provided, and exhaust holes are disposed between and at both ends thereof. An exhaust area 280c including a plurality of 282c may be disposed.

As another example, as shown in FIG. 16, the purge gas injection region 270c may include the process gas injection region 240c, that is, the first process gas injection region 250c and the second process gas injection region 260c. It may be provided to surround the circumference. In this case, the exhaust area 280c may be provided between both ends and the process gas injection area 240c.

As another example, as illustrated in FIG. 17, the exhaust region 280c may be provided to surround the process gas injection region 240c. In this case, a purge gas injection region 270c may be disposed between both ends and the process gas injection region 240c.

As such, when the process gas injection region 240c is surrounded by the purge curtain or the exhaust curtain, the process gas may be prevented from leaking and the density of the deposition may be increased.

Furthermore, at least a portion around the process gas injection region 240c may be surrounded by the purge gas injection region 270c, and the remaining portion may be surrounded by the exhaust region 280c. For example, as illustrated in FIG. 18, the process gas injection region 240c may be surrounded by half of the purge gas injection region 270c and the other half may be surrounded by the exhaust region 280c.

Meanwhile, as shown in FIG. 19, the shower head 200c may include only a purge gas injection region 270c for injecting purge gas to remove particles. That is, when the second gas supply unit is configured as described above, deposition is not performed in the curved path C, and residual gas in the straight path C is prevented from leaking into the curved path through the purge gas injection, and particle generation is prevented. It can be suppressed.

In particular, as described above, since the curved path C is a section adjacent to the driving unit such as the driving pulley 182 (see FIG. 14) and the driven pulley 184 (see FIG. 14), since the particle generation may occur frequently, the shower head ( Using only 200c) for the purge gas injection, not for the deposition process, may be a desirable method for particle suppression.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. You can do it. It is therefore to be understood that the modified embodiments are included in the technical scope of the present invention if they basically include elements of the claims of the present invention.

100 Thin Film Deposition Apparatus 110 Chamber
120 Chamber Chamber 130 Chamber Body
140 ... substrate receiving portion 142 ... receiving pin
144 ... driving part 150 .... substrate supporting part
152 ... susceptor 154 ... connection
156 ... bottom support portion 158 ... roller
160 ... guide portion 170 ... heating portion
180 < SEP >
184 ... driven pulley 190 ... connection member
200 Gas supply section 205 Cover
210 ... first supply line 212 ... supply channel
220 ... second supply line 230 ... exhaust line
300 ... gas supply module 315 ... limited portion
330 ... exhaust member 332 ... exhaust channel
350 ... Plasma electrode 355 ... dispersion part
360 ... Electrode supporter 600 ... Substrate inlet /
610 ... second robot arm 700 ... load lock chamber
810, 820 ... boat 1000 ... substrate processing apparatus

Claims (17)

chamber;
A substrate moving unit for moving a plurality of substrates in the chamber along a predetermined closed path having a pair of straight paths and curved paths, respectively;
A first gas supply part provided on a straight path in the chamber and supplying at least one of a process gas and a purge gas;
A second gas supply part provided on a curved path in the chamber and supplying at least one of a process gas and a purge gas; And
And a substrate drawing in / out unit which draws in and draws out the substrate into the chamber. The method of claim 1, further comprising:
The thin film deposition apparatus of claim 1, wherein the substrate withdrawal and withdrawal unit comprises a single device capable of performing withdrawal and withdrawal of the substrate. The method of claim 1,
The substrate moving part
A substrate support portion for supporting the substrate;
A connection member connected to the substrate support and interlocked with the substrate support;
A pair of driving parts for moving the connection member along the straight path and the curved path; And
And a guide part for supporting the substrate support to be movable. The method of claim 1,
The chamber has a predetermined space therein and includes a chamber body having an upper opening and a chamber lid for sealing an opened upper portion of the chamber body, wherein the first gas supply part and the second gas supply part are provided in the chamber lead. Thin film deposition apparatus, characterized in that. 5. The method of claim 4,
The first gas supply unit and the second gas supply unit,
A cover for sealing the opening of the chamber lid;
Two or more gas supply modules provided in the openings to supply process gas or purge gas;
And a plasma electrode provided between the gas supply modules and supported by the chamber lead or the chamber body. The method of claim 5,
And an exhaust channel for exhausting residual gas between at least one of the gas supply modules and between the gas supply module and the chamber lead. 5. The method of claim 4,
The second gas supply unit,
And a plurality of gas supply blocks divided in a length direction, and controlling the injection amount of the process gas injected through the respective gas supply blocks. The method of claim 7, wherein
A plurality of branch lines for supplying process gas to the respective gas supply blocks;
And a flow rate control valve provided at the branch line to adjust an amount of process gas supplied to each gas supply block. 5. The method of claim 4,
The second gas supply unit,
Thin film deposition apparatus comprising a shower head of a shape corresponding to at least a portion of the curved path. 10. The method of claim 9,
The shower head includes:
A thin film deposition apparatus comprising a process gas injection region for injecting a process gas, a purge gas injection region for injecting a purge gas, and an exhaust region for exhausting residual gas. The method of claim 10,
The process gas injection region is a thin film deposition apparatus, characterized in that the form having a larger area toward the outer side from the radial direction of the curved path. The method of claim 10,
The purge gas injection region is thin film deposition apparatus characterized in that it is provided so as to surround the process gas injection region. The method of claim 10,
And the exhaust region is provided to surround the process gas injection region. The method of claim 10,
At least a portion around the process gas injection region is surrounded by a purge gas injection region, and the other part is surrounded by an exhaust region. 10. The method of claim 9,
The showerhead is a thin film deposition apparatus including only a purge gas injection area for injecting a purge gas to remove particles. chamber;
A substrate moving unit which moves the substrate along a predetermined closed path having a straight path and a curved path to perform a deposition process of the substrate in the chamber;
A first gas supply part provided on a straight path in the chamber and supplying at least one process gas and a purge gas; And
A second gas supply part provided on the curved path in the chamber to supply at least one process gas and purge gas, and spraying more process gases to the substrate from the inner side in the radial direction of the curved path toward the outer side; Vapor deposition apparatus. In the thin film deposition apparatus having a closed path consisting of a straight path and a curved path,
A main gas supply unit provided on a straight path in the chamber and supplying a process gas and a purge gas to perform a deposition process; And
And an auxiliary gas supply unit provided on the curved path in the chamber and supplying a purge gas to prevent particles.

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