KR20130141749A - Thin film deposition apparatus - Google Patents

Abstract

The present invention relates to a thin film deposition device. The thin film deposition device according to the present invention includes a chamber, a substrate supporting unit, which is installed inside the chamber, on which multiple substrates are placed and some of them are selectively being rotated, and a gas supply unit for supplying multiple process gases towards the substrates, wherein the gas supply unit supplies the multiple gases regarding each substrate simultaneously or consecutively.

Description

[0001] The present invention relates to a thin film deposition apparatus,

The present invention relates to a thin film deposition apparatus.

(CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or the like, as a deposition method for forming a thin film on a substrate such as a semiconductor wafer Technology has been used.

However, according to the conventional thin film deposition apparatus, one apparatus can perform only one deposition mode in the case of depositing a thin film on an object. For example, a conventional 'ALD device' (Atomic Layer Deposition apparatus) formed a thin film according to the atomic layer deposition mode. In addition, a conventional 'CVD apparatus' (Chemical Vapor Deposition apparatus) forms a thin film according to the chemical vapor deposition mode.

It is necessary to separately provide a device corresponding to each mode when a thin film is to be formed on an object by different deposition modes if only one deposition mode is performed by one device like a conventional device. This causes the producers to purchase a plurality of thin film deposition apparatuses in accordance with the deposition mode, thereby significantly increasing the cost of the process. Further, various problems such as an installation space and an increase in work processes arise due to a plurality of apparatuses .

It is an object of the present invention to provide a thin film deposition apparatus capable of selectively performing two or more different deposition modes in one apparatus to solve the above problems.

It is an object of the present invention to provide a plasma processing apparatus having a chamber, a substrate support unit disposed inside the chamber and selectively rotating with a plurality of substrates mounted thereon, and a gas supply unit capable of supplying a plurality of process gases toward the substrate, The supply unit supplies a plurality of process gases to the respective substrates simultaneously or sequentially.

Here, the thin film deposition apparatus may include any one of a first deposition mode in which a plurality of process gases are simultaneously supplied to each of the substrates, and a second deposition mode in which a plurality of process gases are sequentially supplied to the substrates, .

Wherein the gas supply unit includes a first gas supply unit capable of supplying at least one of a first process gas and a second process gas toward the substrate and at least one of a first process gas and a purge gas toward the substrate, And a second gas supply unit capable of exhausting gas and purge gas. The gas supply unit may plasmaize and supply the reaction gas in at least one of the first deposition mode and the second deposition mode. In this case, when the first process gas is supplied from one of the first gas supply unit and the second gas supply unit, the control unit controls to stop the supply of the first process gas. The first gas supply unit and the second gas supply unit are sequentially provided on the chamber.

Specifically, in the first deposition mode, the first gas supply unit simultaneously supplies the first process gas and the second process gas toward the respective substrates, and in the second deposition mode, the second gas supply unit supplies the first process gas And the first gas supply unit supplies the second process gas and sequentially supplies the first process gas and the second process gas. Further, in the first deposition mode, the driving of the second gas supply part is stopped, or only the purge gas is supplied by the second gas supply part, or the purge gas supply and exhaust is performed by the second gas supply part.

The distance between the second gas supply unit and the substrate is less than the distance between the first gas supply unit and the substrate.

Meanwhile, the thin film deposition apparatus stops the substrate supporting unit in the first deposition mode and moves the substrate supporting unit at a predetermined speed in the second deposition mode. In this case, in the first deposition mode, the substrate is moved so that the substrate is positioned between the second gas supply units, or the substrate is moved so that the substrate does not overlap with the second gas supply unit.

Also, the number of the second gas supply part is equal to the number of the substrate.

Further, the second gas supply unit adjacent to each other is provided so as to have a shape corresponding to the substrate.

The first gas supply unit may further include a plasma electrode for converting the second process gas into plasma. Specifically, the first gas supply unit includes a first electrode and a second electrode, which are disposed to face each other with a predetermined gap therebetween and have a plasma reaction space therebetween. Here, the first electrode and the second electrode are provided parallel to the substrate. The second electrode may include a first supply hole for supplying the first process gas and a second supply hole for supplying the second process gas to the reaction space, And a second supply hole for supplying the second process gas. In this case, the diameter of the second supply hole is not less than the diameter of the first supply hole. Wherein the first supply hole is provided inside the second electrode and connected to a first process gas supply line for supplying the first process gas and the second supply hole penetrates through the second electrode, And is connected to a second process gas supply line which communicates. In addition, a first gas inlet for allowing the first process gas to flow into the first process gas supply line is further provided on one side of the second electrode.

The second gas supply unit includes a housing, a first gas supply module provided in the housing and including a first supply channel through which the first process gas is supplied, a first gas supply module provided in the housing, A purge gas supply module having a gas supply channel, and an exhaust channel provided to surround the housing.

The chamber may include a cover spaced a predetermined distance from the substrate and facing the upper surface of the substrate, a first sidewall connected to the center of the cover and extending in the substrate direction, And a second side wall, and an exhaust unit for exhausting gas supplied from the gas supply unit to the chamber. Here, the exhaust unit includes a first exhaust slit provided in the chamber and parallel to the moving direction of the substrate. The first slit is provided on the first sidewall and the second sidewall. In this case, the height of the first exhaust slit is determined between the substrate and the lower end of the first gas supply part. Further, the first exhaust slit is provided in the first sidewall and the second sidewall between the second gas supply units. Furthermore, the exhaust unit further includes a second exhaust slit provided at a lower end of the second gas supply unit. In this case, the second exhaust slit is disposed parallel to a virtual plane parallel to the direction of the exhaust gas exhausted through the first exhaust slit, and is provided perpendicular to the moving direction of the substrate. The second exhaust slit communicates with the exhaust channel through the housing of the second gas supply unit.

On the other hand, the chamber further includes an exhaust passage communicating with the exhaust section. For example, the apparatus further includes an outer chamber surrounding at least a portion of the region including the exhaust portion of the chamber, and the exhaust portion exhausts through a space between the chamber and the outer chamber.

Further, substrate rising means for changing the distance between the substrate and the gas supply portion in at least one of the first deposition mode and the second deposition mode may be included. In this case, the substrate supporting part includes a substrate mounting part on which the substrate is mounted, and the substrate elevating and lowering part moves the substrate mounting part up and down by a predetermined distance. The substrate lifting means may elevate the upper end of the substrate to a height equal to or higher than the height of the lower end of the second gas supply portion when the substrate is lifted.

In addition, the substrate support may move along a circular movement path inside the chamber. In addition, the substrate support may move along a pair of linear paths within the inner chamber and along a pair of curved paths connecting the linear paths.

According to another aspect of the present invention, there is provided a thin film deposition apparatus for depositing a thin film on an object, comprising: a first deposition mode for simultaneously supplying a source gas and a reactive gas to the object to deposit a thin film; And a second deposition mode in which a thin film is deposited by sequentially supplying a reactive gas to the thin film deposition apparatus. Here, in at least one of the first deposition mode and the second deposition mode, the reaction gas is plasmaized and supplied.

According to the present invention having the above-described configuration, it is possible to implement at least two or more different deposition modes in one apparatus, so that even if deposition operations are performed by different deposition modes, all operations can be performed by one apparatus do. That is, a plurality of deposition apparatuses can be replaced by one apparatus as compared with a conventional thin film deposition apparatus, so that the cost can be remarkably reduced when the deposition work is performed. In addition, by replacing a plurality of devices with one device, it is possible to reduce installation space and cost, and consequently improve substrate throughput. Furthermore, the cost of maintenance after installation of the apparatus can be significantly reduced.

1 is an exploded perspective view of a thin film deposition apparatus according to an embodiment of the present invention,
Fig. 2 is a view showing the gas supply unit in Fig. 1,
3 is a sectional view taken along the line III-III in Fig. 2,
FIG. 4 is a bottom view of the first gas supply unit in FIG. 3,
FIG. 5 is a view showing the second gas supply unit in FIG. 2,
FIG. 6 is a partial cross-sectional view showing the inside of the chamber along the rotation direction of the substrate in FIG. 1,
7 is a cross-sectional view taken along line VII-VII in FIG. 1,
8 is a cross-sectional view showing the inside of a chamber of a thin film deposition apparatus according to another embodiment,
Figure 9 is a partial enlarged view of the substrate support in Figure 8;
10 is a view showing a gas supply unit according to another embodiment,
11 is a view showing a gas supply unit according to another embodiment,
12 is a perspective view showing a thin film deposition apparatus according to another embodiment.

Hereinafter, a thin film deposition apparatus according to various embodiments of the present invention will be described in detail with reference to the drawings.

1 is an exploded perspective view of a thin film deposition apparatus 1000 according to an embodiment of the present invention.

Referring to FIG. 1, a thin film deposition apparatus 1000 includes a chamber 200. In this embodiment, the chamber 200 is provided to form a predetermined space therein. A substrate supporting part 250 is rotatably installed in the chamber 200 to mount the substrate W on the substrate supporting part 250. The substrate support unit 250 is selectively rotated according to a control command of the controller 700. [ Meanwhile, the chamber 200 may have a circular shape, but may be formed along the movement path of the substrate W as shown in FIG. That is, in the embodiment shown in FIG. 1, the substrate support 250 on which the substrate W is mounted moves along a circular path in the chamber 200. In this case, the chamber 200 may have a so-called " donut " shape to form the movement path of the substrate W. For example, the chamber 200 may include a cover 202 facing the upper surface of the substrate W and spaced apart from the substrate W by a predetermined distance, a first substrate 202 connected to the center of the cover 202, And a second sidewall 210 connected to the outer periphery of the side wall 205 and the cover 202 and extending in the direction of the substrate W. [ As described above, when the chamber 200 has a donut shape as compared with the case where the chamber 200 has a circular shape, the volume inside the chamber 200 is reduced. Accordingly, when performing the deposition operation on the object through various deposition modes, it is possible to reduce the amount of the gas supplied into the chamber 200, which contributes to cost reduction.

Meanwhile, the outer chamber 100 may be further provided on the outer side of the chamber 200. The outer chamber 100 may be provided to surround at least a part of the chamber 200. In particular, the outer chamber 100 may be provided to surround at least a part of the region including the exhaust portion 600 of the chamber 200 described later. When the outer chamber 100 encloses the chamber 200, the exhaust gas exhausted from the exhaust unit 600 flows through the space between the chamber 200 and the outer chamber 100 and is exhausted. The exhaust unit 600 includes a first exhaust slit 220 formed in the chamber 200 and a second exhaust slit 512 described later. Also, the outer chamber 100 may surround almost the entire outer side of the chamber 200 as shown in FIG. 1, or may surround only the exhaust part 600. This will be described in detail later.

Hereinafter, the structure inside the chamber 200 will be described in detail with reference to the drawings. 2 is a top view of the inside of the chamber 200. For convenience of explanation, the position of the substrate W is shown by a dotted line.

Referring to FIG. 2, the thin film deposition apparatus 1000 includes a gas supply unit 300 capable of supplying a plurality of process gases toward the substrate W.

In the present embodiment, the gas supply unit 300 may supply a plurality of process gases to each substrate W at the same time or may sequentially supply a plurality of process gases. For example, the gas supply unit 300 may supply the first process gas (the 'source gas' or the 'source gas') and the second process gas (or the 'reaction gas' The first process gas and the second process gas can be sequentially supplied.

That is, the thin film deposition apparatus 1000 according to the present embodiment includes an input unit 800 capable of selecting a deposition mode, and the control unit 700 controls the gas supply unit 800 according to the deposition mode selected / Thereby controlling the gas supply and the movement of the substrate supporter 250 by the substrate 300.

The input unit 800 is provided to select at least two deposition modes. That is, the input unit 800 includes a plurality of deposition systems including a first deposition mode for simultaneously supplying a plurality of process gases to each substrate W, and a second deposition mode for sequentially supplying a plurality of process gases to each substrate Mode can be selected. For example, when two types of process gases are used, the first and second process gases are simultaneously supplied to the first and second process gases and the first and second process gases, respectively, And the second deposition mode. Here, the first deposition mode can deposit the thin film by, for example, 'CVD method', and the second deposition mode can deposit the thin film by 'ALD method', for example. As a result, the thin film deposition apparatus 1000 according to the present embodiment can realize two or more deposition modes having different deposition processes in one apparatus.

Conventional thin film deposition apparatuses can perform only one deposition mode in the case of depositing a thin film on an object. For example, a conventional 'ALD apparatus' (Atomic Layer Deposition apparatus) sequentially supplies a plurality of process gases to a substrate according to an atomic layer deposition mode to form a thin film. In addition, a conventional 'CVD apparatus' (Chemical Vapor Deposition apparatus) simultaneously supplies a plurality of process gases to a substrate according to a chemical vapor deposition mode to form a thin film. It is necessary to separately provide a device corresponding to each mode when a thin film is to be formed on an object by different deposition modes if only one deposition mode is performed by one device like a conventional device. This causes the producers to purchase a plurality of thin film deposition apparatuses in accordance with the deposition mode, thereby significantly increasing the cost of the process. Further, various problems such as an installation space and an increase in work processes arise due to a plurality of apparatuses .

Accordingly, in order to solve the above-described problems, the thin film deposition apparatus 1000 according to the present embodiment is provided to perform deposition according to at least two different deposition modes. That is, when the user selects one of the two or more different deposition modes, the deposition operation is performed according to the selected deposition mode. Therefore, the thin film deposition apparatus 1000 according to the present embodiment can realize at least two or more different deposition modes in one apparatus, so that even when the deposition operation is performed by different deposition modes, . ≪ / RTI > That is, a plurality of deposition apparatuses can be replaced by one apparatus as compared with a conventional thin film deposition apparatus, so that the cost can be remarkably reduced when the deposition work is performed. In addition, by replacing a plurality of devices with one device, it is possible to reduce installation space and cost, and consequently improve substrate throughput. Furthermore, the cost of maintenance after installation of the apparatus can be significantly reduced. Hereinafter, the structure of the thin film deposition apparatus having the above-described effects will be described in detail.

Referring to FIG. 2, the gas supply unit 300 includes a first gas supply unit 400, 410, or 420 that is provided in the chamber 200 and can supply at least one of the first process gas and the second process gas toward the substrate W. And a second gas supply unit 500 provided in the chamber 200 and capable of supplying at least one of the first process gas and the purge gas toward the substrate W. [ Also, the second gas supply unit 500 is provided to exhaust the supplied first process gas, the second process gas, and / or the purge gas.

For example, the first gas supply units 400, 410, 420, and 430 may be of the so-called 'showerhead' type and include at least one of the first process gas and the second process gas toward the lower substrate W As shown in FIG. On the other hand, the second gas supply unit 500 may be provided as an 'injector' type and may supply at least one of the first process gas and the purge gas toward the lower substrate W. In addition, the second gas supply unit 500 is configured to exhaust various supplied process gases and / or purge gases. Specific configurations of the first gas supply unit and the second gas supply unit 500 will be described in detail later.

The first gas supply units 400, 410, 420, and 430 and the second gas supply unit 500 are sequentially disposed on the upper portion of the chamber 200. 2, a second gas supply unit 500 is provided on the upper part of the chamber 200 and first gas supply units 400, 410, 420, and 430 are provided between adjacent second gas supply units 500. [ Respectively. Alternatively, the first gas supply units 400, 410, 420, and 430 may be installed on the upper portion of the chamber 200, and the second gas supply unit 500 may be installed between the neighboring first gas supply units 400. That is, in this embodiment, the first gas supply portion is provided in the form of four modules having the same shape and provided between the second gas supply portions 500.

The control unit 700 controls the first gas supply units 400, 410, 420, and 430 and the second gas supply unit 500 according to the deposition mode selected by the user so that appropriate process gases and / or purge gases . That is, when the first process gas is supplied from one of the first gas supply units 400, 410, 420, and 430 and the second gas supply unit 500, the control unit 700 supplies the first process gas So as to be stopped. Hereinafter, one first gas supply unit 400 will be described as an example.

For example, the control unit 700 may simultaneously supply the first process gas and the second process gas toward the respective substrates by the first gas supply unit 400 when the user selects the first deposition mode. Since the first process gas and the second process gas are simultaneously supplied, a thin film can be formed on the substrate by a chemical vapor deposition process. On the other hand, when the first deposition mode is selected, the controller 700 may completely stop the driving of the second gas supply part 500, or may supply only the purge gas by the second gas supply part 500. Or in the first deposition mode, the controller 700 may perform purge gas supply and exhaust by the second gas supply unit 500. [

On the other hand, when the user selects the second deposition mode, the control unit 700 controls the second gas supply unit 500 to supply the first process gas and the first gas supply unit 400 to supply the second process gas . In this case, the first gas supply unit 400 and the second gas supply unit 500 are sequentially disposed in the chamber 200, and the substrate support unit 250 is rotated in the second deposition mode, And the second process gas is sequentially supplied to the substrate W. Since the first process gas and the second process gas are sequentially supplied to the substrate W, a thin film can be formed on the substrate by the atomic layer deposition method.

Meanwhile, the gas supplying unit 300 according to the present embodiment supplies the second process gas (or 'reaction gas') in a plasma mode in at least one of the first deposition mode and the second deposition mode. Hereinafter, a specific configuration of the first gas supply unit 400 will be described with reference to FIG.

3 is a cross-sectional view taken along the line III-III in FIG. 2, and is a side sectional view showing the internal structure of the first gas supply unit 400. FIG.

Referring to FIG. 3, the first gas supply unit 400 includes a means for supplying the first process gas and a means for supplying the second process gas. Further, when the second process gas is supplied, the second process gas is supplied in a plasma state.

The first gas supply unit 400 may include plasma electrodes 450 and 470 for converting plasma of the second process gas into plasma and may be configured to convert a space between the plasma electrodes 450 and 470 into a plasma reaction space 455 . That is, the plasma electrodes are provided with a first electrode 450 and a second electrode 470 provided facing each other with a predetermined interval therebetween and having a plasma reaction space 455 therebetween. The first electrode 450 and the second electrode 470 may be connected to each other by an insulator 460. Here, when power is supplied to the first electrode 450, the second electrode 470 may be grounded. However, since the first electrode 450 is located at the upper portion and the power supply is easy, it is preferable to supply power to the first electrode 450.

Meanwhile, the first gas supply unit 400 is provided in the form of a plurality of modules as described above. For example, the present embodiment is provided in the form of four modules. Accordingly, when power is supplied to the first gas supply units 400, 410, 420, and 430, a separate power supply unit may be provided in each module to supply power. For example, in the present embodiment, four power supply units may be provided and power may be supplied to four modules of the first gas supply units 400, 410, 420, and 430, respectively. Alternatively, it is also possible to provide one power supply unit and supply power to any one of the first gas supply units 400, 410, 420, and 430, and connect the remaining modules to the module to which power is supplied.

The first electrode 450 and the second electrode 470 are provided parallel to the lower substrate W. Therefore, an electric field can be formed in a direction perpendicular to the substrate W to generate plasma.

On the other hand, the second electrode 470 described above includes not only an electric field corresponding to the first electrode 450, but also means for supplying a first process gas and means for supplying a plasmaized second process gas .

Specifically, the second electrode 470 includes a plurality of first supply holes 404 for supplying the first process gas and a plurality of second supply holes 402 for supplying the plasmaized second process gas. Here, the first supply hole 404 is provided inside the second electrode 470 and is connected to the first process gas supply line 408 for supplying the first process gas. Further, a first gas inlet 406 for introducing the first process gas into the first process gas supply line 408 is provided at one side of the second electrode 470. As a result, the first process gas is supplied from the first process gas supply source (not shown) through the first gas inlet 406 to the interior of the second electrode 470 and flows along the first process gas supply line 408 And is supplied toward the lower substrate W through the first supply hole 404.

The second supply hole 402 is connected to the second process gas supply line 403 which communicates with the reaction space 455 through the second electrode 470. Further, the first electrode 450 is provided with a second gas inlet 452 for supplying the second process gas to the reaction space. As a result, the second process gas is supplied from the second process gas supply source (not shown) to the plasma reaction space 455 through the second gas inlet 452, and the second process gas is supplied to the first electrode 450 and the second electrode 470 Plasma is generated in the plasma reaction space 455 by an electric field and is supplied to the lower substrate W through the second process gas supply line 403 and the second supply hole 402.

As a result, in the present embodiment, the first electrode 450 and the second electrode 470 serve to generate an electric field for generating plasma and to provide means for supplying various process gases.

4 shows a first supply hole 404 and a second supply hole 402 provided in a lower portion of the first gas supply part 400. As shown in FIG.

 Referring to FIG. 4, the diameter of the second supply hole 402 for supplying the plasmaized second process gas is greater than the diameter of the first supply hole 404 for supplying the first process gas. This is to sufficiently supply the radicals of the plasmaized second process gas. The first supply holes 404 may be arranged to surround the second supply holes 402 between the second supply holes 402 as shown in the figure or may be arranged in a honeycomb form .

5 is a view showing the second gas supply part 500 of the gas supply part 300. [

Referring to FIG. 5, the second gas supply unit 500 can supply the first process gas and the purge gas, and further includes means for exhausting the supplied various gases.

Specifically, the second gas supply unit 500 includes a housing 510 provided at an upper portion of the chamber 200. The housing 510 is mounted on the upper portion of the chamber 200 and the first gas supply units 400, 410, 420 and 430 are provided between the neighboring housings 510 as described above.

A gas supply module 520 may be provided inside the housing 510. The gas supply module 520 may be spaced apart from the inner wall of the housing 510 by a predetermined distance. The gas supply module 520 includes a first gas supply module 540 having a first supply channel 542 to which a first process gas is supplied and a purge gas supply channel 532 to which purge gas is supplied, And a gas supply module 530. For example, a first gas supply module 540 is located at approximately the center of the housing 510, and a pair of purge gas supply modules 530 are provided at both sides of the first gas supply module 540. The first process gas is supplied from the first process gas supply source (not shown) to the first gas supply module 540 and is supplied through the first supply channel 542. Further, the purge gas is supplied from the purge gas supply source (not shown) to the purge gas supply module 530, and is supplied through the purge gas supply channel 532.

Meanwhile, the second gas supply unit 500 may include an exhaust channel 550 provided to surround the housing 510. Specifically, the space between the inner wall of the housing 510 and the gas supply module 520 corresponds to the exhaust channel 550. That is, the space between the housing 510 and the gas supply module 520 can be used as the exhaust channel 550 without a separate exhaust member for exhausting, thereby simplifying the structure while reducing the number of components have. Accordingly, when supplying the first process gas and / or the purge gas by the gas supply module 520, various gases supplied through the exhaust channel 550 can be exhausted. In this case, the exhaust channel 550 can suck and exhaust various gases by pumping a pump (not shown).

As described above, the thin film deposition apparatus 1000 according to the present embodiment can selectively perform at least two or more different deposition modes. When the different deposition modes are performed in one apparatus, the distance between the gas supply unit 300 and the substrate W may be a major factor. Hereinafter, the arrangement of the substrate W and the gas supply unit 300 will be described with reference to the drawings.

FIG. 6 is a partial cross-sectional view showing the internal structure of the chamber 200 along the moving direction of the substrate W in FIG. 1, and FIG. 7 is a sectional view taken along the line VII-VII in FIG.

6 and 7, the thin film deposition apparatus 1000 according to the present embodiment may include a second gas supply unit 500 corresponding to the number of substrates W mounted on the substrate support unit 250 . That is, the number of the second gas supply part 500 is the same as the number of the substrate W. This is for the purpose of enabling a pair of second gas supply parts 500 adjacent to one substrate to act as barrier ribs when a deposition operation is performed by a first deposition mode ('CVD method') as described later . This will be described in detail later.

When the first gas supply part 400 and the second gas supply part 500 are provided on the upper part of the chamber 200, the lower ends of the first gas supply part 400 and the second gas supply part 500 have different heights . For example, the distance between the second gas supply part 500 and the substrate W may be less than the distance between the first gas supply part 400 and the substrate W. [ That is, the lower end of the second gas supply part 500 is disposed closer to the substrate W and the substrate supporting part 250 than the lower end part of the first gas supplying part 400. In this case, the lower end of the second gas supply part 500 is spaced apart from the substrate supporting part 250 by a predetermined distance so as not to interfere with the moving substrate supporting part 250. The lower part of the second gas supplying part 500 is spaced by a minimum distance.

6, when the lower end of the second gas supply unit 500 is disposed closer to the substrate W than the first gas supply unit 400, the second gas supply unit 500 blocks the substrates W Effect. For example, as will be described later, when the deposition operation is performed in the case of the first deposition mode, the substrate W is stopped between the second gas supply parts 500. In this case, since the lower end of the second gas supply part 500 disposed on both sides of the substrate W is disposed very close to the substrate support part 250, the second gas supply part 500 serves as a sort of partition wall. Therefore, the space between the substrate W and the first gas supply unit 400 serves as a kind of reaction space, and the gas supplied from the first gas supply unit 400 is supplied to the side surface of the substrate W by the second gas supply unit 500 It is prevented from being moved. Thus, efficient thin film deposition can be achieved when the deposition operation is performed by the first deposition mode.

On the other hand, it is important that the process of discharging various kinds of gas supplied when performing the deposition operation by various deposition modes. If the supplied gas is not appropriately exhausted and remains in the chamber, the supply of the process gas and the purge gas becomes difficult due to the pressure of the inner residual gas. Further, unnecessary vapor deposition may occur due to the reaction of the residual gas, thereby deteriorating the quality of the thin film formed on the substrate, and forming a thin film in an unnecessary region of the chamber. As described above, the thin film deposition apparatus 1000 has the exhaust channel 550 for exhausting the gas to the second gas supply unit 500, but it may be difficult to perform sufficient exhaust with the exhaust channel 550 alone. Therefore, it further includes an exhaust means capable of exhausting the remaining gas, and will be described in detail below.

Referring to FIGS. 6 and 7, the thin film deposition apparatus 1000 includes an exhaust unit 600 in the chamber 200 for exhausting the gas supplied from the gas supply unit 300.

In this embodiment, the exhaust unit 600 may include various exhaust slits provided in the chamber 200. For example, the exhaust unit 600 includes a first exhaust slit 220 provided in the chamber 200 and substantially parallel to the moving direction of the substrate W.

The chamber 200 has a cover 202, a first sidewall 205 connected to the cover 202 and a second sidewall 210, as described above. In this case, the first exhaust slit 220 is provided in the first sidewall 205 and the second sidewall 210. It is preferable that the first exhaust slit 220 is provided adjacent to the substrate W in order to efficiently perform exhausting. For example, the height of the first exhaust slit 220 can be determined between the substrate W and the lower end of the first gas supply part 400, and is preferably closer to the substrate W than the first gas supply part 400 Respectively. Therefore, the gas supplied from the first gas supply unit 400 first reaches the substrate W, and then is exhausted through the first exhaust slit 220. [ Meanwhile, as described above, the lower end of the second gas supply part 500 is disposed closer to the substrate W than the first gas supply part 400. When the first exhaust slit 220 is provided in the first sidewall 205 and the second sidewall 210, the first sidewall 205 and the second sidewall 210 between the second gas supply units 500, The first exhaust slit 220 is provided.

As described above, the chamber 200 may further include an outer chamber 100 outside the chamber 200, and the outer chamber 100 may surround at least a portion of the chamber 200 including the exhaust portion 600. Respectively. 7, a predetermined space is formed between the outer chamber 100 and the chamber 200 when the outer chamber 100 is provided. The outer chamber 100 has a base 120 at a lower portion thereof and an edge of the base 120 is spaced apart from the outer chamber 100 by a predetermined distance. The space between the outer chamber 100 and the chamber 200 and the space between the edge of the base 120 and the outer chamber 100 form the exhaust passage 130 through which the exhaust gas is exhausted. The exhaust gas exhausted through the first exhaust slit 220 is exhausted through the space between the outer chamber 100 and the chamber 200 and between the outer edge of the base 120 and the outer chamber 100 As shown in Fig.

However, in the case of exhausting various kinds of gas supplied toward the substrate W, it is preferable to exhaust uniformly in all directions surrounding the substrate W. The exhaust is performed in the direction surrounding the substrate W by the first exhaust slit 220 and the second gas supply unit 500 described above and the direction of the exhaust gas through the first exhaust slit 220, The direction of the exhaust gas through the exhaust pipe 500 does not lie on the same plane and becomes perpendicular to each other. Therefore, the second exhaust slit 512 may further include a second exhaust slit 512 parallel to a virtual plane parallel to the direction of the exhaust gas exhausted through the first exhaust slit 220 for uniform exhaust. Here, the second exhaust slit 512 may be provided at the lower end of the second gas supply part 500.

As described above, the space between the housing 510 and the gas supply module 520 acts as an exhaust channel 550 in the second gas supply part 500. Therefore, if the second exhaust slit 512 is provided on one side of the housing 510 so as to communicate with the exhaust channel 550 through the housing 510, the exhaust channel 550 can be pumped by pumping the pump (not shown) The second exhaust slit 512 can be exhausted together. The second exhaust slit 512 is disposed substantially parallel to the moving direction of the substrate W but is disposed parallel to a virtual plane parallel to the direction of the exhaust gas exhausted through the first exhaust slit 220. As a result, the first exhaust slit 220 and the second exhaust slit 512 uniformly discharge the exhaust gas in all directions with respect to the substrate W, thereby improving the deposition efficiency.

7, the outer chamber 100 is configured to surround the chamber 200, but it is not limited thereto. The outer chamber 100 may be configured to surround a partial region including the first exhaust slit 220 of the chamber 200 It is possible. In this case, the outer chamber 100 is provided with an exhaust passage for exhausting the exhaust gas therein.

On the other hand, when the deposition operation is performed by a plurality of deposition modes, the distance between the substrate W and the gas supply unit 300 may need to be appropriately adjusted depending on the type of the process gas. For example, when the deposition operation is performed in the deposition mode in which the substrate W is not rotated, the substrate support 250 is kept in a stationary state without rotating. In this case, the distance between the substrate W and the first gas supply units 400, 410, 420, and 430 may need to be changed depending on the kind of the process gas. Therefore, another embodiment of the thin film deposition apparatus capable of changing the distance between the substrate W and the gas supply unit 300 in response to this necessity will be described.

8 is a cross-sectional view showing the inside of a chamber of a thin film deposition apparatus according to another embodiment. 6, the same reference numerals are used for the same constituent elements. Hereinafter, differences will be mainly described.

Referring to FIG. 8, the thin film deposition apparatus according to the present embodiment is provided to adjust the distance between the substrate W and the gas supply unit 300 in at least one of two or more deposition modes. For example, the thin film deposition apparatus has a substrate lifting means for moving the substrate W up and down by a predetermined distance.

8, the substrate supporting part 250 may include a substrate mounting part 255 on which the substrate W is mounted. The substrate mounting / lowering part includes a substrate mounting part 255 vertically disposed at a predetermined distance . 8, when the substrate W is raised by a predetermined distance according to the kind of the process gas in the deposition mode in which the substrate W does not rotate, the substrate W and the first gas supply unit 400 are heated, The quality of the thin film can be improved. The upper end of the substrate W rises above the height of the lower end of the second gas supply part 500 and the side of the substrate seating part 255 and the second gas A labyrinth structure is formed between the supply portions 500. Therefore, it is possible to further prevent the process gas or the like supplied by the first gas supply unit 400 from flowing out through the space between the substrate seating unit 255 and the second gas supply unit 500.

Meanwhile, it is preferable that the above-described substrate lifting means is provided to raise and lower the substrate seating portion 255 on which the substrate W is mounted by a predetermined distance. That is, if the substrate lifting means is configured to raise and lower only the substrate W, the process gas is also introduced into the lower surface of the substrate W, including the upper surface of the substrate W, ) Can also be deposited. Therefore, in order to prevent the bottom surface of the substrate W from being deposited, the substrate lifting unit according to the present embodiment is provided to raise and lower the substrate seating unit 255 on which the substrate is placed.

The substrate lifting means described above can be implemented in various ways. Fig. 9 is a partially enlarged view of the substrate supporting portion in Fig. 8, showing the substrate lifting means.

9, a first through hole 254 is formed in the substrate supporting part 250 and a substrate lifting member 900 for moving the substrate seating part 255 up and down by a predetermined distance below the substrate supporting part 250, . The substrate elevating and lowering member 900 includes a body portion 910 and a plurality of elevating pins 920 vertically extended from the body portion 910. Accordingly, when the substrate lifting member 900 is lifted by driving the driving unit (not shown), the lifting pin 920 moves up through the first through hole 254 as shown in FIG. In this case, the substrate mounting portion 255 rises by the lifting and lowering pin 920, and the substrate W is eventually raised. When the substrate W is lowered, it operates in the reverse order. The substrate lifting member 900 and the driving unit may be provided on the base 120, for example. The substrate support 250 may be provided on the base 120 because the substrate support 250 is rotatably mounted on the substrate support 250.

The thin film deposition apparatus includes a lift pin for moving the substrate W up and down when the substrate W is drawn into the chamber 200 or when the substrate W is taken out of the chamber 200 950). The pins 952 of the lift pins 950 pass through the second through holes 252 of the substrate supporting portion 250 and the third through holes 257 of the substrate seating portion 255 to move the substrate W up and down .

If the substrate lifting member 900 and the lift pin 950 are provided together as described above, interference may occur between the substrate lifting member 900 and the lift pin 950 when they are driven. Therefore, in order to prevent interference between the substrate lifting member 900 and the lift pins 950, the body portion 910 of the substrate lifting member 900 is moved in the vertical direction so that the lift pins 950 can move upward and downward . For example, the body portion 910 may be provided in the form of a frame having a hollow therein, as shown in some perspective views of FIG.

On the other hand, the substrate lifting means of FIGS. 8 and 9 has been described as an example, and various means for lifting and lowering the substrate can be realized.

On the other hand, Fig. 10 shows a gas supply unit 1300 according to another embodiment. The gas supply unit 1300 according to the present embodiment is different from the above-described embodiment in that the second gas supply unit 1500 is provided in the first gas supply unit 1400. Hereinafter, the differences will be mainly discussed.

10, the gas supply unit 1300 according to the present embodiment includes a first gas supply unit 1400 corresponding to an upper portion of the chamber 200, and a second gas supply unit 1400 And a plurality of fixing holes 1410 that can be inserted and fixed. In this case, the second gas supply part 1500 may be inserted / fixed into the fixing hole 1410 of the first gas supply part 1400 and then the first gas supply part 1400 may be mounted on the upper part of the chamber 200 have.

In this embodiment, since the first gas supply unit 1400 is constituted by one member, it can supply power to the first gas supply unit 1400 with one power supply unit when supplying power. In this case, power can be supplied to the center of the first gas supply part 1400.

11 also shows a gas supply 2300 according to another embodiment. The gas supply unit 2300 according to this embodiment is different from the above-described embodiments in that the adjacent second gas supply unit 2500 has a shape corresponding to the substrate W. Hereinafter, differences will be mainly described.

Referring to FIG. 11, the opposing surfaces of the second gas supply units 2500 adjacent to each other have a circular arc shape corresponding to the shape of the substrate W. The distance between the substrate W and the second gas supply unit 2500 can be minimized when the substrate W is stopped between the second gas supply units 2500 in the first deposition mode as described later. As a result, the space between the first gas supply part 2400 and the substrate W can be reduced, and the use of the process gas and the purge gas supplied from the first gas supply part 2400 can be reduced. Further, since the second gas supply unit 2500 has a shape corresponding to the substrate W, the effect of gas shutoff by the second gas supply unit 2500 can be further improved.

The second gas supply unit 2500 includes a gas supply module 2520. The gas supply module 2520 includes a first gas supply module 2540 for supplying a first process gas, A purge gas supply module 2530 to which the purge gas supply module 2530 is supplied and an exhaust channel 2520 along the periphery of the second gas supply part 2500.

Hereinafter, a process of performing the deposition operation in the thin film deposition apparatus 1000 having the above structure will be described.

First, when the user selects the first deposition mode ('CVD') through the input unit 800, the controller 700 controls the substrate W so that the substrate W is positioned between the second gas supply units 500, ) To control the movement of the substrate supporter (250) so as not to overlap with the second gas supply part (500). That is, the substrate supporting unit 250 is moved a predetermined distance so that the substrate W is positioned between the second gas supplying units 500. To this end, it is possible to provide positioning means (not shown) for grasping the relative positions of the substrate W and the second gas supply part 500. For example, a light emitting unit (not shown) may be provided at a position of the substrate W of the substrate supporting unit 250, and a light receiving unit (not shown) may be provided between the second gas supplying units 500 of the chamber 200 have. It can be determined that the substrate W is located between the second gas supply units 500 when the light receiving unit receives the signal transmitted from the light emitting unit. Such position sensing means has been described as an example and can be implemented in various ways.

If the substrate W is disposed between the second gas supply units 500 when the first deposition mode is selected, the controller 700 may rotate the substrate support unit 250 during the deposition operation in which various process gases and purge gases are supplied . As a result, the second gas supply part 500 functions as a partition wall, so that the first gas supply part 400 and the one substrate W are reacted at a ratio of 1: 1 to improve the quality of the thin film .

Then, the control unit 700 simultaneously supplies the first process gas and the second process gas to the respective substrates by the first gas supply unit 400. In this case, the controller 700 can completely stop the driving of the second gas supplying part 500, or can supply only the purge gas by the second gas supplying part 500. Or in the first deposition mode, the controller 700 may perform purge gas supply and exhaust by the second gas supply unit 500. [

Meanwhile, the gas supplied by the first gas supply unit 400 is uniformly exhausted through the first exhaust slit 220 and the second exhaust slit 512. Further, when the exhaust channel of the second gas supply unit 500 is driven, the exhaust gas is also exhausted through the second gas supply unit 500.

On the other hand, in the first deposition mode, depending on the type of the process gas, the controller can raise the substrate seating part 255 on which the substrate W is placed by the substrate lifting / lowering unit.

When the user selects the second deposition mode ('ALD' mode) through the input unit 800, the controller 700 controls the substrate supporting unit 250 to rotate the substrate supporting unit 250 at a predetermined speed, .

Specifically, the control unit 700 controls the second gas supply unit 500 to supply the first process gas and the first gas supply unit to supply the second process gas. In this case, the control unit 700 controls the first gas supply unit 400 so that the first process gas is not supplied. Therefore, the first process gas and the second process gas are sequentially supplied to the substrate W, and a thin film can be formed on the substrate by the atomic layer deposition method.

In the above-described embodiments, the substrate support moves along the circular movement path along the inside of the chamber, but the present invention is not limited thereto and may include various movement paths. For example, the substrate support may move along a pair of straight paths spaced a predetermined distance apart and arranged in a substantially parallel manner, and a pair of curved paths connecting the pair of straight paths. 12 shows a thin film deposition apparatus including a pair of linear paths and a pair of curved paths connecting the pair of linear paths.

12, an exploded perspective view of the chamber lid 3120 is shown to show the internal structure of the thin film deposition apparatus 3100. As shown in Fig. In this embodiment, as described above, there is a difference in that the substrate W moves along the movement path including the straight path and the curved path, not the circular path. Hereinafter, differences will be mainly described.

12, a thin film deposition apparatus 3100 includes a chamber 3110, a gas supply unit 3200 provided in the chamber 3110 and supplying at least one of a process gas and a purge gas of one or more kinds, a chamber 3110, And a substrate transfer portion 3180 for transferring a plurality of substrates W along a predetermined movement path within the substrate transfer portion 3100. [ At one side of the chamber body 3130, an opening 3134 through which the substrate W is drawn into and drawn out of the chamber 3110 is provided.

The chamber body 3130 of the chamber 3110 is provided with a substrate moving portion 3180 for moving the substrate W along a predetermined movement path. The substrate transfer portion 3180 includes a power transfer member 3190 to which the substrate support portion 3150 is connected and interlocked, a drive portion 3182 and 3184 that moves the power transfer member 3190 along the straight path and the curved path, And a guide portion for movably supporting the substrate supporting portion 3150.

The movement path includes a straight path L for moving the substrate supporting part 3150 supporting the substrate W along a predetermined straight line and a curved path C for moving the substrate supporting part 150 along a predetermined curve do.

In a device for performing deposition by rotating a substrate at a predetermined speed in a circular shape, the movement path of the substrate is formed in a circular shape, so that the rotational angular velocity of the circular central portion differs from that of the outer periphery. Therefore, the deposition of the substrate region adjacent to the center of the circle and the substrate region adjacent to the circular outline proceeds differently, and the thickness of the deposition varies on one substrate. In this embodiment, in order to solve the above-described problems, when the substrate W is moved to perform deposition, the deposition operation is performed while the substrate W moves linearly. That is, the substrate includes a linear path through which the substrate can move linearly, and a deposition operation is performed while the substrate moves along the linear path. When the substrate moves along the linear path, the surface area of the substrate moves all at the same speed, so there is no possibility that the thickness of the deposition is changed during the deposition operation.

In the present embodiment, the movement path described above includes a straight path L for moving the substrate support 3150 along a predetermined straight line, and a curved path C for moving along the predetermined curve. For example, the substrate transfer portion 3180 moves the substrate support 3150 along a predetermined closed loop. Here, the menopausal path may be defined as a path that passes the starting point again while moving along a predetermined path from one starting point. To this end, the substrate moving part 3180 according to the present embodiment can move the substrate supporting part 3150 along a pair of the straight path L and the curved path C, respectively. That is, a pair of linear paths L are arranged substantially parallel to each other at a predetermined interval, and a pair of curved paths C are connected between the linear paths L. Here, the curved path C may be a semicircular shape having a predetermined radius, or may be any curved shape other than a straight shape.

In this embodiment, the gas supply unit 3200 includes a first gas supply unit 3250 and a second gas supply unit 3260 similar to the above-described embodiments, and the lower end portion 3262 of the second gas supply unit 3260 Is closer to the substrate. Since the description of the first gas supply part 3250 and the second gas supply part 3260 is similar to the above-described embodiments, repetitive description will be omitted.

100 ... outer chamber 200 ... chamber
220 ... first exhaust slit 250 ... substrate support
300 ... gas supply unit 400 ... first gas supply unit
500 ... second gas supply unit 512 ... second exhaust slit

Claims (38)

chamber;
A substrate supporting unit provided within the chamber, the substrate supporting unit having a plurality of substrates mounted thereon and rotated selectively; And
And a gas supply part capable of supplying a plurality of process gases toward the substrate.
The gas supply unit is a thin film deposition apparatus, characterized in that for supplying a plurality of process gases to the substrate at the same time or sequentially. The method of claim 1,
And selectively performing any one of a first deposition mode for simultaneously supplying a plurality of process gases to each of the substrates and a second deposition mode for sequentially supplying a plurality of process gases to each of the substrates. Thin film deposition apparatus. 3. The method of claim 2,
The gas supply part
A first gas supply unit configured to supply at least one of a first process gas and a second process gas toward the substrate; And
And a second gas supply unit configured to supply at least one of the first process gas and the purge gas toward the substrate, and to exhaust the process gas and the purge gas. 3. The method of claim 2,
Wherein the gas supply unit plasmaizes the process gas in at least one of the first deposition mode and the second deposition mode. The method of claim 3,
The thin film deposition apparatus of claim 1, wherein when one of the first gas supply unit and the second gas supply unit supplies the first process gas, the other stops the first process gas supply. The method of claim 3,
Wherein the first gas supply unit and the second gas supply unit are sequentially provided on the chamber. The method of claim 3,
Simultaneously supplying the first process gas and the second process gas toward the substrates by the first gas supply unit in the first deposition mode,
Supplying the first process gas from the second gas supply part and supplying the second process gas from the first gas supply part in the second deposition mode to sequentially supply the first process gas and the second process gas Thin film deposition apparatus characterized in that. The method of claim 3,
Wherein the distance between the second gas supply unit and the substrate is not more than the distance between the first gas supply unit and the substrate. The method of claim 3,
Wherein the substrate support is stopped in the first deposition mode and the substrate support is moved at a predetermined speed in the second deposition mode. The method of claim 3,
And the substrate is moved so that the substrate is positioned between the second gas supply units in the first deposition mode. The method of claim 3,
Wherein the substrate is moved so that the substrate does not overlap the second gas supply unit in the first deposition mode. The method of claim 3,
Wherein the number of the second gas supply part is equal to the number of the substrate. The method of claim 12,
And the second gas supply unit adjacent to each other has a shape corresponding to the substrate. 5. The method of claim 4,
The first gas supply unit
Further comprising a plasma electrode for plasma-forming the second process gas. 15. The method of claim 14,
The first gas supply unit
Wherein the plasma electrodes are provided with a first electrode and a second electrode facing each other with a predetermined gap therebetween and having a plasma reaction space therebetween. 16. The method of claim 15,
Wherein the first electrode and the second electrode are parallel to the substrate. 17. The method of claim 16,
And a second gas inlet for supplying the second process gas to the reaction space is provided in the first electrode. 18. The method of claim 17,
Wherein the second electrode comprises a first supply hole for supplying the first process gas and a second supply hole for supplying the plasmaized second process gas. 19. The method of claim 18,
And the diameter of the second supply hole is equal to or larger than the diameter of the first supply hole. 19. The method of claim 18,
Wherein the first supply hole is provided inside the second electrode and connected to a first process gas supply line for supplying the first process gas and the second supply hole penetrates through the second electrode, And the second process gas supply line is connected to the second process gas supply line. 21. The method of claim 20,
Further comprising a first gas inlet for allowing the first process gas to flow into the first process gas supply line at one side of the second electrode. The method of claim 3,
The second gas supply part
housing;
A first gas supply module provided in the housing and having a first supply channel through which the first process gas is supplied;
A purge gas supply module provided in the housing and having a purge gas supply channel to which the purge gas is supplied; And
And an exhaust channel provided to surround the housing. The method of claim 1,
The chamber
A cover spaced apart from the substrate by a predetermined distance and facing the upper surface of the substrate;
A first sidewall connected to the center of the cover and extending in the direction of the substrate; And
And a second side wall connected to an outer peripheral portion of the cover and extending in the direction of the substrate. 24. The method of claim 23,
And an exhaust part for exhausting the gas supplied from the gas supply part to the chamber. 25. The method of claim 24,
Wherein the exhaust unit includes a first exhaust slit provided in the chamber and disposed in parallel with a moving direction of the substrate. 25. The method of claim 24,
Wherein the exhaust unit includes a first exhaust slit provided on the first sidewall and the second sidewall. 27. The method of claim 25 or 26,
Wherein the height of the first exhaust slit is determined between the substrate and the lower end of the first gas supply part. The method of claim 256 or 25,
Wherein the first exhaust slit is provided on the first sidewall and the second sidewall between the second gas supply units. 27. The method of claim 25 or 26,
Wherein the exhaust unit further comprises a second exhaust slit provided at a lower end of the second gas supply unit. 30. The method of claim 29,
Wherein the second exhaust slit is disposed parallel to an imaginary plane parallel to the direction of the exhaust gas exhausted through the first exhaust slit and perpendicular to the moving direction of the substrate. 30. The method of claim 29,
The second gas supply unit includes a housing, a first gas supply module provided in the housing and having a first supply channel through which the first process gas is supplied, a purge gas supply unit provided in the housing, A second gas supply module having a channel, and an exhaust channel provided to surround the housing,
And the second exhaust slit communicates with the exhaust channel through the housing. 25. The method of claim 24,
Further comprising an exhaust flow path communicating with the exhaust part in the chamber. 25. The method of claim 24,
Further comprising an outer chamber surrounding at least a part of the region including the exhaust portion of the chamber, wherein the exhaust portion exhausts through a space between the chamber and the outer chamber. 3. The method of claim 2,
And substrate up / down means for changing a distance between the substrate and the gas supply unit in at least one of the first deposition mode and the second deposition mode. 35. The method of claim 34,
Wherein the substrate supporting portion includes a substrate mounting portion on which the substrate is mounted, and the substrate elevating / lowering means moves the substrate mounting portion up and down by a predetermined distance. 36. The method of claim 35,
Wherein the substrate raising / lowering means raises the upper end of the substrate to a height equal to or higher than a height of the lower end of the second gas supplying portion when raising the substrate. The method of claim 1,
Wherein the substrate support moves along a circular movement path inside the chamber. The method of claim 1,
And the substrate support portion moves along a pair of straight paths and a pair of curved paths connecting the straight paths within the inner chamber.

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