KR101372275B1 - Thin film deposition apparatus - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus. According to the present invention, a thin film deposition apparatus includes a chamber, a gas supply unit configured to supply at least one of one or more types of process gas and purge gas, and a substrate moving a plurality of substrate support units along a predetermined movement path in the chamber. And a partition means for partitioning the moving part, the heating part for heating the substrate, and the gas supply part and the substrate moving part.

Description

[0001] The present invention relates to a thin film deposition apparatus,

The present invention relates to a thin film deposition apparatus.

(CVD), plasma enhanced chemical vapor deposition (PECVD), and atomic layer deposition (MOCVD) as a deposition method for forming a thin film on a substrate such as a semiconductor wafer A technique such as ALD (atomic layer deposition) is used.

FIG. 13 is a schematic diagram showing a basic concept of an atomic layer deposition method among substrate deposition methods. FIG. Referring to FIG. 13, in the atomic layer deposition method, a raw material gas including a raw material such as trimethyl aluminum (TMA) is injected onto a substrate and then the substrate is sprayed through an inert purge gas such as argon (Ar) and exhaust of unreacted materials. A single atomic layer is adsorbed onto the substrate, and a reaction gas containing a reactant such as ozone (O ₃ ) reacted with the raw material is injected, followed by inert purge gas injection and unreacted material / by-product evacuation. Al-O).

The conventional thin film deposition apparatus used in the atomic layer deposition method has various kinds depending on the injection direction and the method for the substrate surface on which the source gas, the reactive gas, the purge gas and the like are to be deposited. However, the conventional thin film deposition apparatus used in the atomic layer deposition method has a problem in that it can not satisfy both the thin film having excellent quality and the throughput of the substrate. That is, when the thin film of excellent quality is achieved, there is a disadvantage that the throughput of the substrate is remarkably low. On the other hand, when the throughput of the substrate is improved, the quality of the thin film is deteriorated.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a thin film deposition apparatus capable of significantly improving substrate throughput in order to solve the above problems. In addition, it is an object of the present invention to provide a thin film deposition apparatus that can increase the substrate throughput and provide a thin film of excellent quality.

An object of the present invention as described above is a chamber, a gas supply unit for supplying at least one of one or more types of process gas and purge gas provided in the chamber, a substrate for moving a plurality of substrate support portion along a predetermined movement path in the chamber It is achieved by a thin film deposition apparatus comprising a moving part, a heating part for heating the substrate and partition means for partitioning the gas supply part and the substrate moving part. Here, the partition means includes a partition wall partitioning the gas supply portion and the substrate moving portion. The partition wall extends from the chamber, and an end portion of the partition wall is spaced apart from the substrate support part by a predetermined distance.

On the other hand, the heating unit is provided below the substrate along the movement path of the substrate, the partition wall is provided below the heating unit. The substrate support part includes a susceptor on which a substrate is mounted, a lower support part provided below the susceptor, and a connection part connected to the substrate moving part while connecting the lower support part and the susceptor. Extends into the space between the susceptor and the lower support in the chamber. In this case, the partition wall is provided above the substrate moving part to cover at least a portion of the substrate moving part.

Further, the movement path includes a pair of straight paths arranged in parallel and spaced apart a predetermined distance and a pair of curved paths connecting the pair of straight paths, the partition means is provided in the center of the movement path It further comprises a partition. In this case, the chamber includes a chamber body having a predetermined space therein and having an upper opening and a chamber lid for opening and closing the opened upper portion of the chamber body, wherein the partition portion is provided in the chamber lid. Therefore, an end portion of the partition wall and the partition portion are provided at a predetermined distance apart from each other, and the substrate support part is connected to the substrate moving part through a space between the partition wall and the partition part.

On the other hand, the thin film deposition apparatus according to the present embodiment can adjust the gas supply so that the purge gas is supplied to the space between the partition and the partition. The foreign substance may be prevented from flowing through the space between the partition and the partition by the supplied purge gas.

In addition, the partition means includes a partition gas supply unit for supplying an inert gas toward the substrate between the gas supply unit and the substrate moving unit. Here, the compartment gas supply unit is provided in the chamber.

Furthermore, when the roller of the substrate moving part, the belt, the guide part, and the roller of the substrate support part are made of a metal material, the magnetic member may be provided adjacent to the substrate moving part. In this case, the magnetic member is provided adjacent to the pulley or the guide portion.

On the other hand, the object of the present invention as described above is provided in the chamber, the gas supply unit for supplying at least one of one or more types of process gas and purge gas provided in the chamber, a plurality of substrate support portion in the chamber along a predetermined movement path A substrate moving part configured to partition the substrate moving part, a heating part heating the substrate, a gas supply part and a substrate moving part, and a partition wall to prevent foreign substances generated in the substrate moving part moving toward the gas supply part, and the gas supply part and the substrate It is achieved by a thin film deposition apparatus comprising a compartmental gas supply unit for supplying an inert gas toward the eastern part.

According to the present invention having the above-described configuration, substrate throughput can be improved by supplying a process gas and / or a purge gas by a plurality of gas supply units while simultaneously moving a plurality of substrates along a movement path including a straight path and a curved path It can be remarkably improved.

In addition, the present invention includes a partition means for partitioning the process region (or the region where the gas supply unit and / or the substrate is located) and the driving region (or region where the substrate moving unit) is moved to the substrate is deposited It prevents foreign matters that may occur in the driving region from flowing into the process region. The partition means includes a partition wall, a partition part, and a partition gas supply part, and the partition means prevents the inflow of foreign substances in the deposition process of the thin film, thereby obtaining a thin film having excellent quality.

Further, when the foreign matter generated in the substrate moving part includes a metal component, a magnetic member is provided adjacent to the substrate moving part to capture the foreign material, thereby preventing foreign matter from entering the process region.

1 is a plan view showing a substrate processing apparatus according to an embodiment,
FIG. 2 is an exploded perspective view showing the chamber in FIG. 1,
3 is a sectional view taken along the line III-III in Fig. 2,
FIG. 4 is a perspective view of the substrate moving part in FIG. 2,
Fig. 5 is a perspective view showing the gas supply unit in Fig. 2,
6, 7 and 8 are cross-sectional views taken along a line VI-VI of Fig. 5 showing the configuration of various gas supply units,
9 is a perspective view showing a gas supply unit according to another embodiment,
10 is a sectional view taken along the line X-X in Fig. 9,
11 is a cross-sectional view showing a gas supply unit according to yet another embodiment,
12 is an enlarged perspective view of the 'A' region of FIG. 11,
13 is a schematic diagram showing the basic concept of a vapor deposition apparatus.

Hereinafter, a thin film deposition apparatus and a substrate processing apparatus having the thin film deposition apparatus according to various embodiments of the present invention will be described in detail with reference to the drawings.

1 is a plan view showing the overall configuration of a substrate processing apparatus 1000 according to an embodiment.

Referring to FIG. 1, the substrate processing apparatus 1000 includes a thin film deposition apparatus 100 for performing a process such as a deposition operation on a substrate, a load lock chamber 700 capable of switching to a vacuum or atmospheric pressure state, And a plurality of boats 820 for loading a substrate on which deposition has been completed. Here, the thin film deposition apparatus 100 includes a chamber 110 for accommodating a substrate therein and a substrate pull-out unit 600 for pulling in and taking out the substrate. Although the substrate processing apparatus 1000 according to the present embodiment is assumed to have two chambers 110, it is not limited thereto.

When a substrate is supplied to the chamber 110 of the thin film deposition apparatus 100, a first robot arm (not shown) inside the load lock chamber 700 transfers the substrate from the boat 810 into the load lock chamber 700 . Subsequently, the load lock chamber 700 is converted into a vacuum state, and the second robot arm 610 of the substrate pull-out unit 600 receives the substrate and supplies the substrate to the chamber 110. When the substrate is taken out of the chamber 110, the process proceeds in the reverse order. Hereinafter, the thin film deposition apparatus 100 of the substrate processing apparatus 1000 will be described in detail.

2 is a perspective view showing the thin film deposition apparatus 100. FIG. In FIG. 2, the chamber lid 120 is shown in an exploded perspective view to show the internal structure of the thin film deposition apparatus 100.

2, the thin film deposition apparatus 100 includes a chamber 110, a gas supply unit 200 provided in the chamber 110 to supply at least one of a process gas and a purge gas of at least one kind, a chamber 110, A substrate transfer portion 600 for moving a plurality of substrates W along a predetermined movement path within the chamber 110 and a substrate transfer portion 600 for transferring the substrate W into and out of the chamber 110 have.

The chamber 110 accommodates the substrate W therein to perform a deposition operation on the substrate, and provides a space for providing various components. Furthermore, it provides an environment in which a substrate processing operation such as a deposition operation or the like can be performed by keeping the inside in a vacuum state by a vacuum equipment such as a pump (not shown) for exhausting air inside.

The chamber 110 includes a chamber body 130 having a predetermined space therein and opening and closing the opened upper portion of the chamber body 130. One side of the chamber body 130 includes an opening 134 through which the substrate W is drawn in and drawn out into the chamber 110, and a connector 132 sealing the substrate in / out part 600 and the opening 134. do.

The openings 134 may be provided in the chamber body 130 in pairs. 1, when two chambers 110 are provided in the substrate processing apparatus 1000 to connect the two chambers 110 to one substrate inlet / outlet unit 600, productivity and compatibility It is for this reason. That is, when the chamber 110 is manufactured regardless of the direction of the chamber 110 connected to the substrate inlet / outlet part 600, a pair of openings 134 are provided to improve the productivity. In addition, when it is necessary to change the connection portion of the chamber 110 while the chamber 110 is connected to the substrate inlet / outlet portion 600, the substrate inlet / outlet portion may be connected to the other opening portion to improve the compatibility have. On the other hand, when the substrate inlet / outlet part 600 is connected to one opening of the pair of openings 134, the other one opening is sealed with a shielding member (not shown).

In this embodiment, the substrate inlet / outlet part 600 is connected to the chamber 110 and serves to draw the substrate into the chamber 110 or to draw the substrate W after the deposition to the outside of the chamber 110 . When the substrate supporting unit 150 moves by the substrate moving unit 180 as described later, the substrate on which the deposition is completed is moved by the second robot arm 610 of the substrate receiving and feeding unit 600 through the opening 134 Withdraw. The substrate requiring the deposition is supplied to the substrate support 150 inside the chamber 110 through the opening 134 by the second robot arm 610 of the substrate inlet / As described above, in this embodiment, the substrate is pulled in and pulled out by a single device. Therefore, the number of components can be reduced and the installation area can be reduced as compared with a separate device for introducing and withdrawing the substrate, for example, a substrate inlet and a substrate outlet separately. In addition, since the components are reduced, the configuration can be simplified and the maintenance can be easily performed in the future.

Meanwhile, the chamber lid 120 of the chamber 110 is provided with a gas supply unit 200 for supplying at least one of a process gas and a purge gas of one or more types, which will be described in detail later.

The chamber body 130 of the chamber 110 is provided with a substrate transfer part 180 for transferring the substrate W along a predetermined movement path. The movement path includes a linear path L for moving the substrate supporting part 150 supporting the substrate W along a predetermined straight line and a curved path C for moving the substrate supporting part 150 along a predetermined curve do.

The conventional thin film deposition apparatus has a so-called " shower head " for supplying a process gas and / or a purge gas, rotates the substrate circularly at a predetermined speed, and supplies the process gas to the showerhead to perform deposition Respectively. However, in such a shower head system, the moving path of the substrate is formed in a circular shape, so that the rotation angular velocity of the circular central portion and the outer peripheral portion are different. Therefore, the deposition of the substrate region adjacent to the center of the circle and the substrate region adjacent to the circular outline proceeds differently, and the thickness of the deposition varies on one substrate. In this embodiment, in order to solve the above-described problems, when the substrate W is moved to perform deposition, the deposition operation is performed while the substrate W moves linearly. That is, the substrate includes a linear path through which the substrate can move linearly, and a deposition operation is performed while the substrate moves along the linear path. When the substrate moves along the linear path, the surface area of the substrate moves all at the same speed, so there is no possibility that the thickness of the deposition is changed during the deposition operation.

In the present embodiment, the aforementioned movement path includes a straight path L for moving the substrate supporting part 150 along a predetermined straight line, and a curved path C for moving the substrate supporting part 150 along a predetermined curve. For example, the substrate moving part 180 moves the substrate supporting part 150 along a predetermined closed loop. Here, the menopausal path may be defined as a path that passes the starting point again while moving along a predetermined path from one starting point. To this end, the substrate transfer part 180 according to the present embodiment can move the substrate support part 150 along a pair of straight path L and a curved path C, respectively. That is, a pair of linear paths L are arranged substantially parallel to each other at a predetermined interval, and a pair of curved paths C are connected between the linear paths L. Here, the curved path C may be a semicircular shape having a predetermined radius, or may be any curved shape other than a straight shape.

Accordingly, in this embodiment, the gas supply part 200 is provided along the straight path L of the substrate transfer part 180. If the process gas is supplied while the substrate W is mounted on the substrate supporter 150 and moves along the linear path L, the velocity of all the regions of the substrate W becomes constant, It can be made uniform.

Also, in this embodiment, the substrate inlet / outlet part 600 may be provided in the curved path C. As described above, when the substrate W moves along the curved path C, the rotational angular velocity of the surface region of the substrate W varies along the central portion and the outer portion of the curved line. Accordingly, the curved path C may include a substrate inlet / outlet part 600 to allow the substrate W to be drawn into and / or drawn out of the chamber 110, thereby improving space utilization. In this case, the above-described opening 134 may be provided in the chamber body 130 adjacent to the curved path C. Hereinafter, the substrate moving unit 180 will be described in more detail with reference to the accompanying drawings.

FIG. 3 is a cross-sectional view taken along the line III-III in FIG. 2, and FIG. 4 is a partial perspective view showing the structure of the substrate moving part 180 in detail.

3 and 4, the substrate moving part 180 is provided at a lower portion in the chamber 100, and is specifically provided at the bottom of the chamber body 130. The substrate moving unit 180 includes a driving unit and a substrate supporting unit 150 for moving the power transmission member 190 and the power transmission member 190 along the straight path and the curved path to which the substrate support unit 150 is connected. It may be provided with a guide portion 160 to possibly support.

Specifically, a pair of pulleys 182 and 184 are provided at a predetermined distance from the inner bottom of the chamber body 130, and a power transmitting member 190 is provided surrounding the pair of pulleys 182 and 184. Here, the power transmitting member 190 may be formed of, for example, a belt, a chain, or the like. One of the pair of pulleys is connected to a motor (not shown) to serve as a drive pulley 182 for moving the power transmission member 190, the other pulley is a drive and power transmission member of the drive pulley 182. It acts as a driven pulley 184 to rotate together by (190). Therefore, in this embodiment, the pair of pulleys 182 and 184 and the motor correspond to the drive unit.

The substrate support 150 supporting the substrate W is connected to the power transmitting member 190 and moves together with the power transmitting member 190. More specifically, the substrate supporter 150 includes a susceptor 152 on which the substrate W is placed, a lower supporter 156 provided below the susceptor 152 and having a later-described rolling member 158, And a connection portion 154 connecting the lower support portion 156 and the susceptor 152 and connected to the power transmitting member 190.

The susceptor 152 has a susceptor 152 on which a substrate W is mounted and a susceptor 152 is mounted on the susceptor 152 in order to prevent movement of the substrate W during movement of the substrate supporter 150. [ (See Fig. 2). The connection portion 154 is connected vertically downward from one end of the susceptor 152.

The substrate supporting unit 150 moves in conjunction with the movement of the power transmitting member 190. The substrate supporting unit 150 moves along the moving path of the substrate supporting unit 150 while moving the substrate supporting unit 150, The guide portion 160 can be provided. The guide unit 160 may be implemented in various forms. In this embodiment, the guide unit 160 is provided as a linear motion (LM) guide provided below the substrate support unit 150. That is, the LM guide is provided at the bottom of the chamber body 130, and the substrate support 150 is moved along the LM guide while being supported by the LM guide.

Meanwhile, as described above, the substrate moving part 180 moves the substrate support part 150 along a straight path and a curved path, and the path of the substrate support part 150 is substantially formed by the guide part 160. do. Accordingly, in this embodiment, the guide portion 160 is provided to include a straight path and a curved path, and specifically, each of the guide portions 160 is configured to include a pair of a straight path L and a curved path C, respectively. A pair of linear paths L are provided at predetermined intervals, and the configuration in which both ends of the linear path L are connected by the curved path C is as described above.

The substrate support 150 may include a roller 158 corresponding to the guide 160 so that the substrate support 150 can move along the guide 160. For example, the lower support portion 156 of the substrate supporting portion 150 is provided with a guide portion 160, that is, a roller capable of moving along the LM guide. When the substrate supporting unit 150 moves in conjunction with the power transmitting member 190, the substrate supporting unit 150 is supported by the guide unit 160 and moves along the guide unit 160. The power transmitting member 190 provides a force to move the substrate supporting part 150 and the guide part 160 moves the substrate supporting part 150 while the substrate supporting part 150 moves, .

On the other hand, a connection portion 154 is vertically connected to one end of the susceptor 152 downward. The connecting portion 154 is connected to the power transmitting member 190 to allow the power transmitting member 190 to move together with the power transmitting member 190 when the power transmitting member 190 moves. The connection part 154 is preferably detachably connected to the power transmission member 190. This is because it may happen that the substrate support 150 is separated from the power transmitting member 190 for maintenance of the substrate support 150.

Referring to FIGS. 2 and 3, a heating unit 170 for heating the substrate W may be provided below the substrate supporting unit 150. The heating unit 170 is provided at a lower portion spaced apart from the susceptor 152 for supporting the substrate W to heat the substrate W.

In detail, the heating unit 170 includes a plurality of heating plates 172 provided below the substrate W along the movement path of the substrate supporting unit 150. The heating plate 172 is provided at a predetermined distance from the susceptor 152 that supports the substrate W to heat the substrate W. In this embodiment, the substrate supporter 150 includes a susceptor 152, a connection part 154 vertically connected downward from one end of the susceptor 152, and a lower support part 156. That is, the cross section of the substrate support part 150 may have a '⊃' or '⊂' shape as shown in FIG. 3. The heating plate 172 is provided in a space between the susceptor 152 and the lower holding portion 156 to prevent interference between the substrate supporting portion 150 and the heating plate 172 during movement of the substrate supporting portion 150 do.

In the chamber 110, a substrate receiving part 140 for receiving and drawing out the substrate W may be provided. The substrate receiving portion 140 receives the substrate W supplied into the chamber 110 by the substrate inlet / outlet portion 600 and places the substrate W on the substrate supporting portion 150, The substrate W can be drawn out to the outside of the chamber 110 by separating the substrate W from the substrate W. [ For this purpose, the substrate receiving portion 140 is preferably provided adjacent to the substrate inlet / outlet portion 600. Therefore, the substrate receiving unit 140 is provided in the curved path C.

The substrate receiving unit 140 includes a plurality of receiving pins 142 provided to be able to move a predetermined distance up and down, and a driving unit 144 for moving the receiving pins 142 up and down. The receiving pins 142 are provided in plural so as to support the substrate W, and are composed of three, for example. In FIG. 2, reference numeral 146 illustrates a through hole provided in the heating plate 172 to allow the receiving pin 142 to move up and down. That is, the substrate inlet withdrawal unit 600 is provided in the curved path C in the movement path of the substrate support unit 150, and the substrate receiving pin 142 is heated to move up and down for the inlet and / or the substrate out. The plate 172 includes a through hole 146 through which the substrate receiving pin 142 can move. The number of through holes 146 may be formed corresponding to the number of substrate receiving pins 142.

By the way, the thin film deposition apparatus 100 according to the present invention is a device for performing a deposition process for forming a thin film on the surface of the substrate (W) is a device that performs a very precise work. Therefore, even minute environmental changes during the deposition process may affect the quality of the thin film formed on the substrate surface. For example, if a fine foreign matter or the like is introduced into the substrate during the deposition process on the surface of the substrate, the foreign matter is added during the formation of the thin film to degrade the quality of the thin film. Therefore, in the thin film deposition apparatus as described above, it is important to prevent foreign matters from occurring in the chamber 110 during the deposition process, and furthermore, it is important to prevent foreign substances, etc., generated from moving toward the substrate or the gas supply unit. Hereinafter, a configuration for solving the above problems will be described with reference to the drawings.

Referring back to FIG. 3, the inside of the chamber 110 may be largely divided into a process region P in which a deposition operation is performed on the substrate W and a driving region A for driving the substrate W. Referring to FIG. For example, the process region P may be defined as a region where the substrate W and the gas supply unit 200 are located, and the driving region A may include a substrate moving unit 180 for moving the substrate W. It can be defined as a located area. Looking at the interior of the chamber 110 according to the present case, the gas supply unit 200 is provided in the upper portion of the chamber 110, the substrate moving part 180 is provided in the bottom of the chamber 110. Therefore, in this case, the upper portion of the heating unit 170 in the chamber 110 corresponds to the process region P, and the lower portion of the heating unit 170 corresponds to the driving region A in the chamber 110. Since the heating unit 170 is configured to heat the substrate W, the heating unit 170 is preferably included in the process region P. FIG.

By the way, when looking at the foreign matter generated in the chamber 110, the foreign matter may occur in the component moving in the chamber 110, in this case the foreign matter may occur in the substrate moving unit 180. As described above, the substrate moving part 180 includes a power transmission member 190 to which the substrate support part 150 is connected, and a driving part and a substrate support part 150 to move the power transmission member 190 along a movement path. It is provided with a guide portion 160 to be movable. Therefore, foreign matter is generated by the contact force between the power transmission member 190 and the pulleys 182 and 184 while the power transmission member 190 moves, or the substrate support unit 150 while the substrate support unit 150 moves. Foreign matter may occur due to the contact of the rolling member 158 and the guide unit 160 of the.

As a result, in the present exemplary embodiment, partitioning means 1100 may be provided to prevent foreign substances, etc., which may occur in the driving region A from flowing into the process region P as described above. The partition means 1100 is provided to partition the gas supply unit 200 and the substrate moving unit 180 to prevent foreign substances, etc. generated from the substrate moving unit 180 from flowing toward the gas supply unit 200. Alternatively, the partition means 1100 partitions the process region P and the driving region A to prevent foreign substances generated in the driving region A from flowing into the process region P. FIG.

For example, the partition means 1100 may include a partition wall 1000 provided to partition the gas supply part 200 and the substrate moving part 180. The partition wall 1000 is provided to partition the gas supply unit 200 and the substrate moving unit 180. As a result, foreign substances, etc., which may occur in the substrate moving unit 180 may cause the gas supply unit 200 and / or the substrate W to be separated. To prevent movement towards

The partition wall 1000 may be supported by the chamber 110 and may extend from the chamber 110. The partition wall 1000 may be formed to extend horizontally to a predetermined length from the inner wall of the chamber body 130 toward the center portion. In this case, the height at which the partition wall 1000 is formed is lower than that of the heating unit 170. That is, the partition wall 1000 is provided below the heating unit 170. As described above, since the heating unit 170 is a component for heating the substrate W, if the substrate W and the heating unit 170 are separated by the partition wall 1000, the substrate W is heated by the heating unit 170. This is because it is difficult to heat).

On the other hand, since the substrate support part 150 is moved along the movement path by the substrate moving part 180, it is preferable that the substrate support part 150 does not interfere with the partition wall 1000 while the substrate support part 150 moves. That is, the partition wall 1000 divides the gas supply unit 200 and the substrate moving unit 180 (or the process region P and the driving region A), so as to provide a space for the substrate support unit 150 to move. It is provided. As described above, in the present embodiment, the substrate support part 150 includes a susceptor 152 on which the substrate W is seated, a lower support part 156 provided below the susceptor 152, and the lower support part ( And a connection part 154 connected to the power transmission member 190 at the same time as connecting the 156 and the susceptor 152. Looking at the substrate support unit 150 from the side has a '도' or '⊂' shape as shown in FIG. Accordingly, the partition wall 1000 extends toward the space between the susceptor 152 and the lower support part 156 to prevent interference between the substrate support part 150 and the partition wall 1000 while the substrate support part 150 moves. Done.

In this case, an end portion of the partition wall 1000 that is not connected to the chamber 110 is provided to be spaced apart from the substrate support 150 (specifically, the connecting portion 154) by a predetermined distance to provide a space for the substrate support 150 to move. do. On the other hand, the greater the distance between the end portion of the barrier rib 1000 and the substrate support portion 150, the foreign matter generated in the lower driving region A may flow into the upper process region P. Thus, the distance is the substrate support portion 150. ) And the barrier rib 1000 are preferably kept at a minimum distance to prevent interference.

In this embodiment, the partition wall 1000 serves to prevent foreign substances, etc., generated in the driving area A from flowing into the process area P, so that the substrate may be covered to cover at least a portion of the substrate moving part 180. It is provided at the top of the eastern part 180. As shown in FIG. 3, the partition wall 1000 is preferably provided to cover as many areas as possible of the substrate moving part 180. This is because foreign matters, which may occur in the substrate moving part 180, may be prevented from moving toward the gas supply part 200 as the partition 1000 covers the substrate moving part 180.

On the other hand, when the partition wall 1000 is installed to the area provided with the substrate receiving unit 140, although not shown in the figure provided with a through hole so that the receiving pin 142 of the substrate receiving unit 140 can move up and down It is desirable to. That is, the receiving pin 142 moves through the through hole (not shown) of the partition 1000 and the through hole 146 of the heating unit 170 to move up and down.

On the other hand, the thin film deposition apparatus 100 according to the present embodiment includes a movement path to move the substrate (W) in the interior of the chamber 110, the movement path is a pair of straight lines arranged in parallel spaced apart a predetermined distance It includes a pair of curved path (C) connecting the path (L) and a pair of straight path (L). Therefore, as shown in FIG. 3, the partition means 1100 preferably includes a partition 1150 at the center of the movement path. If there is no partition 1150, the pair of straight paths L remain as empty spaces, and foreign substances generated in the lower pulleys 182 and 184 move toward the gas supply units 200 on both sides. It becomes possible. Accordingly, in the partition 1150, foreign matters generated from the lower substrate moving part 180, more specifically, the pulleys 182 and 184 move toward the upper gas supply part 200 and / or the substrate W. To prevent it.

In this embodiment, the partition 1150 is provided in the chamber 110, and specifically, is provided in the chamber lead 120. In addition, the partition 1150 is provided to be spaced apart from the substrate support 150 to prevent interference with the moving substrate support 150. As a result, the above-described end portion of the partition 1000 and the partition 1150 are provided to be spaced apart from each other by a predetermined distance, and the substrate support 150 is the substrate moving part 180 through the space between the partition 1000 and the partition 1150. ) And move.

Meanwhile, as described above, an area in which the gas supply part 200 and / or the substrate W is located may be a process area, and an area in which the substrate moving part 180 is located may be defined as a driving area A. FIG. Here, the gas supply unit 200 supplies at least one kind of process gas and purge gas, and foreign substances generated in the substrate moving unit 180 are introduced into the process area P by the pressure of the supplied gas. Can be prevented. That is, the pressure of the process gas and the purge gas supplied from the gas supply unit 200 is adjusted to a predetermined pressure or more to the space between the partition 1000 and the partition 1150 by the pressure of the supplied process gas and the purge gas. Foreign material can be prevented from entering. In this case, it is preferable to prevent foreign substances from flowing into the space between the partition 1000 and the partition 1150 by the purge gas as compared with the process gas. This is because if the process gas is supplied into the space between the partition 1000 and the partition 1150 and flows into the lower driving region A, deposition may occur in an unneeded region. Therefore, in the present embodiment, the purge gas is supplied to the space between the partition 1000 and the partition 1150 by adjusting the pressure of the purge gas supplied from the gas supply unit 200. As a result, foreign matters in the driving region A may be prevented from flowing into the process region P through the space between the partition wall 1000 and the partition 1150.

By the way, the partition wall 1000 of the partition means 1100 is formed extending from the inner wall of the chamber body 130 toward the center portion, the substrate support 150 is a power transmission member 190 located in the center portion of the chamber body 130 ) And a susceptor 152 is disposed toward the chamber body 130 at the central portion. Therefore, as shown in FIG. 3, the foreign matter generated in the substrate moving part 180 moves toward the chamber body 130 along the space between the partition wall 1000 and the heating part 170, thereby susceptor 152 and the chamber body. It may be supplied toward the substrate W and / or the gas supply unit 200 through a space between the 130. As a result, in order to prevent foreign matter from flowing through the space between the susceptor 152 and the chamber body 130, the partition means 1100 may include a substrate between the gas supply part 200 and the substrate moving part 180. It may further include a partition gas supply unit 1300 for supplying an inert gas toward W). When the inert gas is supplied toward the substrate W by the compartment gas supply unit 1300, the supplied inert gas is divided into two flow directions by the substrate W or the susceptor 152. That is, it is divided into a flow toward the top and a flow toward the bottom centering on the substrate W or susceptor 152. Therefore, it is possible to prevent foreign substances from flowing from the bottom to the top by the flow toward the bottom of the substrate W or the susceptor 152. The compartment gas supply unit 1300 described above may be provided in the chamber 110, and specifically, may be provided in the chamber body 130. The compartment gas supply unit 1300 may receive and supply an inert gas from a compartment gas supply source (not shown).

Meanwhile, the pulleys 182 and 184 may be made of a metal material to maintain proper strength, and the power transmission member 190 that rotates together with the pulleys 182 and 184 may be made of a metal material as well. In addition, the guide unit 160 and the rolling member 158 may also be made of a metal material to maintain a predetermined strength. In this case, the foreign matter generated by the contact between the pulleys 182 and 184 and the power transmission member 190 or the contact between the guide unit 160 and the rolling member 158 has a metal component. Therefore, in view of preventing foreign matter from entering the process region, the magnetic member 1200 may be provided adjacent to the substrate moving part 180. This is because when the foreign substance of the metal component is generated, the foreign substance is adsorbed by the magnetic member 1200 to prevent the foreign substance from moving toward the process region P or the gas supply unit 200. In this case, the foreign matter may be generated by the contact between the pulleys 182 and 184 and the power transmission member 190, or the contact between the guide unit 160 and the rolling member 158, so that the magnetic member 1200 may have a pulley ( It may be provided adjacent to the 182, 184 or may be provided adjacent to the guide portion 160.

Meanwhile, as described above, the gas supply unit 200 is provided along the linear path L while the substrate supporting unit 150 is moving. In FIG. 2, three gas supply units 200 are shown as being provided along the straight path L, but this is merely an example, and can be appropriately adjusted according to the length of the straight path and the width of the gas supply unit 200. The gas supply unit 200 is provided on the chamber 110, specifically, on the chamber lid 120. Specifically, the chamber lid 120 is provided with an opening 122, and the gas supply part 200 is provided in the opening 122. [ Hereinafter, the gas supply unit 200 will be described in detail with reference to the drawings.

FIG. 5 is an enlarged perspective view of the gas supply unit 200 in FIG. 2. FIG. 6 is a cross-sectional view taken along the line VI-VI in FIG. 5 and shows a specific configuration of the gas supply unit 200.

5 and 6, the gas supply unit 200 includes a cover 205 for sealing the opening of the chamber lid 120, and a first process gas (or 'material gas') or a second process gas At least two gas supply modules 300 for supplying a purge gas and a plasma electrode 350 provided between the gas supply module 300 and supported by the chamber lid 120.

The cover 205 is provided on the upper part of the chamber lid 120 to seal the opening of the chamber lid 120. Accordingly, although not shown in the drawings, a gasket (not shown) may be provided between the cover 205 and the chamber lid 120 for sealing. The cover 205 may be provided with a process gas, purge gas, or various lines for the gas to be exhausted, to the gas supply module 300, which will be described in detail later.

Specifically, the cover 205 may be provided with a first supply line 210 for supplying a first process gas (or a 'source gas') and / or a purge gas. The first supply line 210 is connected to a first process gas source (not shown) and / or a purge gas source (not shown) to supply the first process gas and / or purge gas to the gas supply module 300 . Further, the cover 205 may further include a second supply line 220 for supplying a second process gas (or 'reaction gas'). The second supply line 220 may be connected to a second process gas source (not shown) to supply the second process gas toward the plasma electrode 350. The cover 205 may further include an exhaust line 230 for exhausting the process gas and / or the purge gas supplied from the gas supply module 300. The exhaust line 230 is connected to a pumping unit (not shown) to exhaust residual gas in the chamber 110 by pumping the pumping unit.

As described above, the gas supply unit 200 is provided with the gas supply module 300 for supplying the first process gas and / or the purge gas. The gas supply module 300 has a supply channel 212 through which the first process gas and / or purge gas travels. In this embodiment, the gas supply module 300 is seated and fixed at the edge of the opening 122 of the chamber lid 120. The gas supply module 300 is spaced apart from the adjacent gas supply modules by a predetermined distance to form a space therebetween.

The provision of the gas supply module 300 for supplying the process gas and / or the purge gas as in the present embodiment has an advantage that various types of gas can be supplied. That is, when the gas supply unit is formed integrally with one member as in the conventional case, there is a problem that the gas supply unit needs to be replaced as a whole when the number of the gas supplied or the order of the gas changes depending on the type of the substrate, . However, in the present embodiment, the gas supply module 300 is detachably provided, so that the number of the gas supplied by adjusting the number of the gas supply module 300 provided in the opening 122 of the chamber lid 120 is appropriately adjusted. It is possible to adjust. Accordingly, the number of the gas supply module 300 can be easily increased even if the number of the supplied gas and the order of the gas are changed, so that the gas supply unit 200 according to the present embodiment has an advantage of excellent compatibility with the conventional one .

Although the gas supply unit 200 includes two gas supply modules 300 on both sides of the plasma electrode 350 in the present embodiment, this is only an example, and the number of the gas supply modules 300 is It can be adjusted appropriately. It is also possible to provide the same number of gas supply modules 300 on both sides of the plasma electrode 350 or to provide different numbers of gas supply modules 300 on both sides of the plasma electrode 350 .

As described above, the cover 205 is connected to the first supply line 210 for supplying the first process gas and / or the purge gas. The first supply line 210 extends into the interior of the cover 205 to supply the first process gas and / or purge gas to the supply channels 212 of the gas supply module 300. Although not shown in the drawings, the first supply line 210 may have a plurality of supply holes or a supply slit of a predetermined length. The first supply line 210 may be connected to the supply channel 212 of the direct gas supply module 300 or may be connected to the supply channel 212 of the cover 205, 206 may be provided. That is, the supplemental channel 206 extends along the cover 205 at the first supply line 210 and communicates with the supply channel 212. Therefore, the gas supplied from the first supply line 210 is supplied through the auxiliary channel 206 and the supply channel 212.

On the other hand, when the first process gas is supplied through the gas supply module 300, it is preferable that the first process gas is not directly exhausted from the end of the supply channel 212 and a sufficient deposition time is maintained at the substrate surface. This is because the more the process gas has a sufficient deposition time at the substrate surface, the more favorable the deposition. It is also preferable that the process gas is uniformly diffused and supplied toward the substrate W when the process gas is supplied. This is because, when the deposition process is performed on the substrate W, it is advantageous for uniform deposition thickness that the process gas is uniformly diffused and supplied on the surface of the substrate W. [

Thus, in this embodiment, the gas supply module 300 is provided with a confinement portion 315 that allows the gas to diffuse uniformly at the end of the supply channel 212 and allows the process gas to remain sufficiently at the surface of the substrate W . The limiting part 315 is provided at an end of the gas supply module 300 so that the gas supplied by the supply channel 212 is discharged to a predetermined space (hereinafter referred to as a 'reaction space' ). ≪ / RTI > That is, as shown in FIG. 6, the step portion 312 may be provided to form a reaction space at the end of the gas supply module 300. Accordingly, the reaction space having a wider width than the width of the supply channel 212 is formed to form the limiting part 315. Accordingly, the process gas supplied through the supply channel 212 is diffused in the reaction space defined by the defining unit 315 and supplied to the surface of the substrate W. Further, the process gas is divided by the defining unit 315, The substrate is brought into contact with the substrate for a sufficient time. Here, the step portion 312 forming the defining portion 315 has been described as an example, and can be implemented in various forms.

On the other hand, various process gases are supplied into the chamber 110, and when such process gas remains in the chamber 110, deposition may occur in an undesired region other than the substrate due to mutual reaction. Such unnecessary deposition requires a frequent cleaning operation of the thin film deposition apparatus 100 when the thin film deposition apparatus 100 is used for a long time, which causes a lot of time and cost in maintenance. Therefore, the thin film deposition apparatus 100 may include an exhaust means for exhausting the gas remaining in the chamber 110. The thin film deposition apparatus 100 of this embodiment is provided with an exhaust means in the gas supply unit 200.

Specifically, the gas supply unit 200 includes at least two gas supply modules 300, and at least one of the gas supply modules 300 is provided at a predetermined distance from the other. Thus, a space between the gas supply modules 300 forms an exhaust channel 332 for exhausting the residual gas. That is, in this embodiment, a space is provided between the gas supply modules for supplying the process gas and / or the purge gas, instead of forming the exhaust channel by providing a separate member for forming the exhaust channel, as an exhaust channel . Therefore, in this embodiment, the number of constituent elements and the manufacturing process can be reduced when the gas supply unit is manufactured, so that it is possible to remarkably reduce the cost and time when assembling the thin film deposition apparatus. The exhaust channel 332 is connected to an exhaust line 230 provided in the cover 205 to exhaust the residual gas to the outside by pumping the pumping unit.

Meanwhile, unnecessary vapor deposition may occur in the exhaust channel 332 due to the reaction between the process gases when the process gas capable of reacting with each other is exhausted together with the gas exhausted through the exhaust channel 332. That is, deposition may occur outside the gas supply module 300. This prevents the exhaust gas from being smoothly exhausted, and thus requires a cleaning operation. However, in the case of performing the cleaning operation, if the gas supply module 300 is separated and cleaned, a process of reassembling becomes necessary. This increases the cost, process and time of assembling, which is a problem. Hereinafter, a gas supply unit according to another embodiment will be described in order to solve the above problems.

Figure 7 shows a gas supply unit according to another embodiment for solving the above problems. This embodiment differs from the embodiment of FIG. 6 in that the exhaust member 330 for forming the exhaust channel 332 is provided. Hereinafter, the differences will be mainly discussed.

Referring to FIG. 7, an exhaust member 330 is provided in a space between the pair of gas supply modules 300, and the exhaust member 330 has an exhaust channel 332 therein. The exhaust channel 332 forms a passage through which the remaining process gas or purge gas is exhausted. Accordingly, even if evaporation occurs due to the reaction of the process gas exhausted through the exhaust channel 332, the exhaust member 330 is separated to perform the cleaning operation, thereby reducing the time and cost required for reassembling. This is because, when the exhaust member 330 is reassembled, the exhaust member 330 can be closely attached to the adjacent gas supply module 300 and assembled easily.

6 and 7 illustrate a pair of gas supply modules 300 on both sides of the plasma electrode 350 and an exhaust channel 332 between the pair of gas supply modules 300. [ Fig. However, the exhaust channel 332 may be provided before the gas supply along the direction in which the substrate W moves. That is, the exhaust gas may be removed prior to supplying the process gas and / or the purge gas to remove the residual gas on the substrate. 8 shows an example in which the exhaust channel 332 is provided first in the gas supply section along the moving direction of the substrate. Hereinafter, Fig. 8 assumes that the substrate moves from the right side to the left side in the figure when the substrate moves under the gas supply unit.

8, a gas supply module 300 (gas supply module located at the rightmost position in FIG. 8) provided adjacent to the chamber lid 120 is spaced apart from the chamber lid 120 by a predetermined distance, And an exhaust member 330 is provided between the module 300 and the chamber lid 120. As a result, when the substrate moves from right to left, it is possible to exhaust the remaining gas on the surface of the substrate prior to supplying the process gas and / or the purge gas along the moving direction to perform a uniform deposition operation. In the meantime, although the gas supply unit of the present embodiment is shown to include the exhaust member 330 forming the exhaust gas channel 332 at the edge, the exhaust member 330 may be omitted. That is, it goes without saying that the exhaust channel 332 may be formed as a space between the chamber lid 120 and the gas supply module 300. Also, although not shown in the drawings, the exhaust channel may be provided at the end along the moving direction of the substrate.

Hereinafter, a plasma electrode for supplying a plasma during a deposition operation will be described in detail with reference to the drawings.

Referring to FIG. 6, the gas supply unit 200 according to the present embodiment includes two or more gas supply modules 300, and the plasma electrode 350 is provided between the gas supply modules 300.

Specifically, the plasma electrode 350 is supported by the chamber lid 120. That is, the plasma electrode 350 is not supported by the adjacent gas supply module 300 or the cover 205 but is supported by the chamber lead 120. The gas supply module 300 is detachably mounted on the chamber lid 120 and is not suitable for supporting the plasma electrode 350. The cover 205 is removed when the gas supply unit 200 is maintained and repaired. Therefore, if the plasma electrode 350 is supported on the cover 205, it is troublesome to detach the plasma electrode 350. Accordingly, in this embodiment, when the plasma electrode 350 is provided, the plasma electrode 350 is supported by the chamber lid 120.

An electrode supporting part 360 of an insulating material is provided on the chamber lead 120 to support the plasma electrode 350 and the plasma electrode 350 is mounted on the electrode supporting part 360. Although not shown in the drawing, power is supplied to the plasma electrode 350 through the chamber lid 120 and the electrode support 360. At least one of the gas supply modules 300 adjacent to the plasma electrode 350 is grounded to serve as a ground electrode. Preferably, the gas supply modules 300 located on both sides of the plasma electrode 350 are grounded, And serves as a ground electrode.

The cover 205 of the gas supply unit 200 further includes a second supply line 220 for supplying a second process gas for generating plasma. The second process gas is supplied from the second supply line 220 toward the plasma electrode 350. In this case, dispersion means may be provided so that the second process gas is uniformly dispersed around the plasma electrode. The dispersion means may be provided in the plasma electrode 350 and may include a dispersion unit 355 provided in the plasma electrode 350. The dispersion unit 355 is provided in the plasma electrode 350 toward the second supply line 220 to which the second process gas is supplied and serves as a so-called 'diffuser' for dispersing the second process gas.

Specifically, when the cross section of the dispersing unit 355 is viewed, the width of the upper portion is narrower than the width of the lower portion. Thus, a narrow top portion is provided facing the second process gas supply portion such that the second process gas is uniformly distributed to both sides of the plasma electrode 350 along the dispersion portion 355. The dispersion unit 355 may be formed integrally with the plasma electrode 350 or may be formed as a separate member. As a result, a magnetic field is formed between the plasma electrode 350 and the adjacent gas supply module 300 serving as the ground electrode, and the second process gas passes through the magnetic field to become a plasma state to supply radicals toward the lower substrate. do.

Although the plasma electrode 350 is supported by the chamber lid 120 in the above embodiment, the plasma electrode 350 may be supported by the chamber body 130. Figs. 9 and 10 show a configuration in which the plasma electrode 350 is supported by the chamber body 130. Fig. Hereinafter, differences from the above-described embodiment will be mainly described.

FIG. 9 is a perspective view showing a gas supply unit according to another embodiment, and FIG. 10 is a cross-sectional view taken along the line X-X in FIG.

Referring to FIGS. 9 and 10, an electrode support 360 supporting the plasma electrode 350 is connected to the chamber body 130. More specifically, the electrode supporting portion 360 includes a connection portion 362 selectively connected to one side of the chamber body 130, and a support bar 364 supporting the plasma electrode 350 and bent at the connection portion 362 do. The electrode supporting portion 360 is made of an insulating material, which is the same as the above-described embodiment.

The electrode supporting portion 360 is assembled from the outside of the chamber body 130 toward the inside of the chamber 110 or from the inside to the outside of the chamber body 130 as shown in FIG. Therefore, only the connecting portion 362 is visible outside the chamber body 130. The plasma electrode 350 may be previously seated on the support bar 364 when the electrode support 360 is assembled to the chamber body 130. That is, the plasma electrode 350 is mounted on the electrode supporting part 360, and the electrode supporting part 360 is connected to the chamber body 130. Although not shown in the drawing, a gasket or the like may be provided on the contact surface or the like for sealing between the connection portion 362 and the chamber body 130. [ Further, although not shown in the figure, power is supplied to the plasma electrode 350 through the chamber body 130 and the electrode support 360. [ At least one of the gas supply modules 300 adjacent to the plasma electrode 350 is grounded to serve as a ground electrode. Preferably, all of the gas supply modules 300 located on both sides of the plasma electrode 350 are grounded, And serves as an electrode.

As a result, the plasma electrode 350 is said to be supported by the chamber 110, and is specifically supported by the chamber lead 120 or supported by the chamber body 130.

On the other hand, in the above-described embodiment, it is assumed that the substrate transfer unit 180 rotates the substrate W in one direction along a predetermined movement path. However, the thin film deposition apparatus according to the present invention is not limited thereto, and the substrate transfer unit 180 may rotate the substrate W in both directions along the transfer path. For example, when the substrate W is rotated along the movement path, the substrate moving unit 180 changes the rotation direction of the substrate W at a predetermined time interval, or when the substrate W moves along the movement path The rotation direction of the substrate W can be changed. Such a change in the rotational direction of the substrate W may be performed by changing the rotational direction of a motor (not shown) connected to the drive pulley 182 of the substrate transfer unit 180. [ However, if the rotation direction of the substrate W is changed for a predetermined period of time or a predetermined number of rotations, the configuration of the gas supply unit 200 may be different from that of the above embodiment. That is, in the atomic layer deposition method, a thin film can be formed on the substrate W by supplying the first process gas (source gas or source gas) of the disposal to the substrate W and then supplying the second process gas (reaction gas) It is because. Accordingly, the structure of the gas supply unit, which can be applied to a case where the relative movement direction of the substrate W with respect to the gas supply unit is changed for a predetermined time or a predetermined number of rotations, will be described.

11 is a side sectional view showing one embodiment of a gas supply portion that can be applied when the relative movement direction of the substrate W with respect to the gas supply portion is changed.

Referring to FIG. 11, the gas supply unit 2000 according to the present embodiment has a symmetrical structure along the movement path of the substrate W. FIG. That is, since the substrate W is rotated in both directions along the movement path, the gas supply unit 2000 has a symmetrical structure along the movement path of the substrate W, which is advantageous for the deposition of the thin film. That is, since the gas supply part 2000 is symmetrically provided around the central part, the substrate can be deposited on both sides of the substrate in both directions.

In this embodiment, the gas supply unit 2000 includes a first gas supply unit for supplying the first process gas to the center. The first gas supply means includes a first supply line 2110 to which the first process gas is supplied and a first auxiliary channel 2112 to move the first process gas to be supplied toward the substrate W, 2312). Therefore, the gas supply unit 2000 according to the present embodiment is provided symmetrically about the first gas supply means. Hereinafter, a specific configuration of the gas supply unit 2000 will be described with reference to the drawings.

The gas supply part 2000 includes a cover part 2100, a first body part 2300 connected to the cover part 2100 and connected to the upper part of the chamber lead 120, And a second body portion 2500 connected to the plasma electrode 2400 to support the plasma electrode 2400 and to provide an auxiliary exhaust channel 2553.

The cover portion 2100 is connected to a plurality of supply lines to which various gases are supplied and an exhaust line to which residual gas is exhausted. As described above, the first supply line 2110 to which the first process gas is supplied is connected to the substantially central portion. The exhaust line 2150, the purge gas supply line 2120, the second supply line 2130, and the exhaust line 2150 are connected in order from the first supply line 2110 to the right. On the other hand, an exhaust line 2150, a purge gas supply line 2120, a second supply line 2130, and an exhaust line 2150 are symmetrically connected to the left side of the first supply line 2110. The cover part 2100 is also provided with a first auxiliary channel 2112 to which the first process gas supplied from the first supply line 2110 is supplied and an auxiliary exhaust channel 2152 to exhaust the remaining gas to the exhaust line 2150, A purge gas supplementary channel 2122 supplied with the purge gas supplied from the purge gas supply line 2120 and a second auxiliary channel 2132 supplied with the second process gas supplied from the second supply line 2130 do.

Meanwhile, the cover portion 2100 is connected to the first body portion 2300. A first through hole 2102 is formed in the cover part 2100 and a first fastening hole 2302 is formed in the first body part 2300 and connected by bolts or the like. The first body portion 2300 is connected to the upper portion of the chamber lid 120. The first body portion 2300 can be seated along the edge of the opening 122 with the opening 122 in the chamber lid 120 as described above. In this case, a second through hole 2304 may be provided in the first body part 2300 and may be connected to the chamber lead 120 by a bolt or the like.

The first body part 2300 may include a supply channel and an exhaust channel for supplying various gases. Specifically, the first supply channel 2312 communicating with the first auxiliary channel 2112 and supplying the first process gas toward the substrate, and the first exhaust channel 2352 communicating with the auxiliary exhaust channel 2152 to exhaust the remaining gas. ), A purge gas supply channel 2232 communicating with the purge gas auxiliary channel 2122 and supplying a purge gas, and a second supply channel 2332 communicating with the second auxiliary channel 2132 and supplying a second process gas. Equipped. The second exhaust channel 2353 located at the outer periphery of the first body part 2300 is connected to the second body part 2500 to be described later. . Specifically, the length of the second exhaust channel 2353 provided in the first body portion 2300 is shorter than the length of the first exhaust channel 2352.

Meanwhile, the second body part 2500 is connected to the lower part of the first body part 2300. For example, the second body portion 2500 may have a third through hole 2506, and the first body portion 2300 may have a second fastening hole 2306 and may be fastened with a bolt or the like.

The second body part 2500 includes an electrode support part 2510 supporting the plasma electrode 2400 and an auxiliary exhaust channel 2553 communicating with the second exhaust channel 2353. Accordingly, the upper portion of the plasma electrode 2400 is supported by the cover portion 2100, and the lower portion thereof is supported by the electrode supporting portion 2510 of the second body portion 2500. On the other hand, the second process gas is supplied toward the plasma electrode 2400 through the second supply line 2130, the second auxiliary channel 2132, and the second supply channel 2332. In this case, the first body portion 2300 facing the plasma electrode 2400 may serve as a ground electrode.

Meanwhile, the first body part 2300 may further include a dispersing member 2700 for uniformly dispersing the first process gas and the purge gas. A fourth through hole 2702 is provided in the dispersing member 2700 and a third fastening hole 2308 corresponding to the fourth through hole 2702 is formed in the first body portion 2300 and can be connected by the fastening member. FIG. 12 is an enlarged perspective view of the 'A' region of the dispersing member 2700 in FIG.

12, the dispersion member 2700 has a first dispersion channel 2712 that communicates with the first supply channel 2312. [ The first dispersion channel (2712) communicates with the plurality of first dispersion holes (2750). The first process gas moved along the first supply channel 2312 is supplied to the lower substrate W through the first dispersion channel 2712 and the first dispersion hole 2750. [ In this case, the first process gas is uniformly dispersed and supplied through the plurality of first dispersion holes 2750.

The dispersing member 2700 also has a second dispersion channel 2722 in communication with the purge gas supply channel 2322. The second dispersion channel (2722) communicates with the plurality of second dispersion holes (2740). The purge gas moved along the purge gas supply channel 2322 is supplied to the lower substrate W through the second dispersion channel 2722 and the second dispersion hole 2740. [ In this case, the first process gas is uniformly dispersed and supplied through the plurality of second dispersion holes 2740.

On the other hand, the dispersing member 2700 is configured not to cover the lower portion of the second supply channel 2332 and the plasma electrode 2400. This is because it is preferable that the radicals are supplied without passing through the dispersion member 2700 when the radical is supplied by the plasma electrode 2400.

100 ... Thin Film Deposition Device 110 ... Chamber
120 ... chamber lead 130 ... chamber body
140 ... substrate receiving portion 142 ... receiving pin
144 ... driving part 150 .... substrate supporting part
152 ... susceptor 154 ... connection
156 ... bottom support portion 158 ... roller
160 ... guide portion 170 ... heating portion
180 < SEP >
184 .... driven pulley 190 ... belt
200 ... gas supply unit 205 ... cover
210 ... first supply line 212 ... supply channel
220 ... second supply line 230 ... exhaust line
300 ... gas supply module 315 ... limited portion
330 ... exhaust member 332 ... exhaust channel
350 ... Plasma electrode 355 ... dispersion part
360 ... Electrode supporter 600 ... Substrate inlet /
610 ... second robot arm 700 ... load lock chamber
810, 820 ... boat 1000 ... substrate processing apparatus

Claims (16)

chamber;
A gas supply unit provided in the chamber to supply at least one of a process gas and a purge gas;
A substrate moving part moving a plurality of substrate supporting parts along a predetermined movement path in the chamber;
A heating unit for heating the substrate; And
And partitioning means for partitioning the process region in which the deposition operation is performed on the substrate and the driving region for driving the substrate to prevent foreign substances from the driving region from flowing into the process region. Device. The method of claim 1,
And the process region is defined as an area in which the substrate and the gas supply part are located, and the driving area is defined as an area in which the substrate moving part is located. 3. The method of claim 2,
The partition means includes a partition wall partitioning the gas supply unit and the substrate moving part, the partition wall thin film deposition apparatus, characterized in that formed extending from the chamber. The method of claim 3,
An end portion of the partition wall is thin film deposition apparatus characterized in that it has a space to move the substrate support portion spaced apart from the substrate support portion. The method of claim 3,
The heating unit is provided under the substrate along the movement path of the substrate, the partition wall thin film deposition apparatus, characterized in that provided in the lower portion of the heating unit. The method of claim 3,
The substrate support part includes a susceptor on which a substrate is seated, a lower support part provided below the susceptor, and a connection part connected to the substrate moving part while connecting the lower support part and the susceptor.
The partition wall thin film deposition apparatus, characterized in that formed in the chamber extending into the space between the susceptor and the lower support. The method of claim 3,
The barrier rib is provided on the substrate moving portion to cover at least a portion of the substrate moving portion. The method of claim 3,
The movement path includes a pair of curved paths connecting the pair of straight paths and the pair of straight paths arranged in parallel and spaced apart by a predetermined distance,
The partition means further comprises a partition provided in the central portion of the movement path thin film deposition apparatus. 9. The method of claim 8,
The chamber has a predetermined space therein and includes a chamber body having an upper portion opened and a chamber lid for opening and closing an opened upper portion of the chamber body, wherein the partition portion is provided with the thin film deposition apparatus. . 10. The method of claim 9,
And an end portion of the partition wall and the partition part spaced apart from each other by a predetermined distance, and the substrate support part is connected to the substrate moving part through a space between the partition wall and the partition part. 11. The method of claim 10,
Thin film deposition apparatus, characterized in that for adjusting the gas supply unit so that the purge gas is supplied to the space between the partition and the partition. 3. The method of claim 2,
The partition means is a thin film deposition apparatus comprising a partition gas supply unit for supplying an inert gas toward the substrate between the gas supply unit and the substrate moving unit. The method of claim 12,
Thin film deposition apparatus, characterized in that the compartment gas supply unit is provided in the chamber. 3. The method of claim 2,
Thin film deposition apparatus comprising a magnetic member adjacent to the substrate moving portion. 15. The method of claim 14,
The substrate moving part includes a power transmission member connected to and interlocked with the substrate support part, a driving part for moving the power transmission member along the movement path, and a guide part for movably supporting the substrate support part.
Thin film deposition apparatus, characterized in that the magnetic member is provided adjacent to the drive unit or the guide unit. chamber;
A gas supply unit provided in the chamber to supply at least one of at least one kind of process gas and purge gas;
A substrate moving part moving a plurality of substrate supporting parts along a predetermined movement path in the chamber;
A heating unit for heating the substrate;
A partition wall partitioning the gas supply part and the substrate moving part to prevent foreign substances generated in the substrate moving part from moving toward the gas supply part; And
Thin film deposition apparatus comprising a compartment gas supply unit for supplying an inert gas toward the gas supply unit and the substrate moving unit.

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