JP2000173934A - Device and method for forming deposited film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the deterioration of the sliding property of a holding means, generation of dust, generation of uneven temperature of strip-shaped substrates, generation of unevenness of a plasma and the like by a method wherein when the substrates are continuously transferred in the longitudinal direction, the substrates are held by using electromagnetic magnets. SOLUTION: Strip-shaped substrates 10 wound on a bobbin 411 for delivery are changed in their transfer directions by a transfer roller 412 and are transferred to a vacuum container 501 for n-layer film formation, a vacuum container 601 for i-layer film formation and a vacuum container 701 for p-layer film formation. At the time, a plurality of electromagnetic magnets 1 are arranged in the transfer direction of the substrates 10, and a plurality of the electromagnetic magnets 1 hold the substrates 10 in non-contact state by controlling a current separately applied to coils. By this constitution, while the substrates 10 are transferred, treatments such as a film-forming treatment are continuously performed on the substrates 10, and the substrates 10 having been subjected to the treatments, such as the film-forming treatment, within each vacuum container are changed in their transfer directions by a transfer roller 812, and are wound on a bobbin 811 for winding.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an apparatus and a method for forming a deposited film. More specifically, the present invention relates to an apparatus and a method for forming a deposited film capable of suppressing a decrease in yield of the deposited film due to dust generation or the like due to contact between the belt-shaped substrate and the holding means and occurrence of abnormal discharge. . In particular, the present invention is suitably used when a laminated thin film element such as a photovoltaic element is continuously formed on a strip substrate.

[0002]

2. Description of the Related Art Conventionally, as a method of continuously forming a functional deposition film used for a photovoltaic element or the like on a substrate, an independent film forming chamber for forming each semiconductor layer is provided, and each film forming chamber is provided with an independent film forming chamber. Thus, a method of forming each semiconductor layer by using the method has been proposed.

[0003] For example, US Pat. No. 4,400,409 discloses a continuous plasma CVD apparatus employing a roll-to-roll method. According to this device, a plurality of glow discharge regions are provided,
A sufficiently long flexible substrate having a desired width is arranged along a path in which the substrate sequentially passes through each of the glow discharge regions, and a conductive semiconductor layer required in each of the glow discharge regions is formed. It is said that by continuously transporting the substrate in the longitudinal direction while depositing, an element having a semiconductor junction on the substrate can be continuously manufactured. In addition,
The specification also discloses that a gas gate is used to prevent a dopant gas used for manufacturing each semiconductor layer from diffusing or mixing into another glow discharge region. Specifically, means for separating the respective glow discharge regions from each other by a slit-shaped separation passage and creating a flow of a scavenging gas such as Ar or H _{2 in the} separation passage is employed. I have.

Japanese Unexamined Patent Application Publication No. 59-23573 discloses a roll-to-roll type apparatus for holding a band-shaped substrate on a predetermined plane by magnetic force.

Further, Japanese Patent Application Laid-Open No. 9-199430 discloses that a roll-to-roll type apparatus detects abnormal discharge or contact between a belt-like substrate and a member for forming a deposited film, and based on these results. An apparatus that adjusts a moving trajectory of a band-shaped substrate by adjusting a height of a roller including a magnet is disclosed.

Hereinafter, the conventional example will be described in detail with reference to FIGS. 10 and 11. FIG.

FIG. 10 is a schematic sectional view showing an example of a conventional roll-to-roll deposition film forming apparatus. The apparatus shown in FIG.
Vacuum container 501 for n-layer film formation, vacuum container 60 for i-layer film formation
1. Vacuum container 701 for p-layer deposition and vacuum container 801 for winding are gas gates 451, 551, 651, 751
Each vacuum vessel has an exhaust port 40
2, 502, 602, 702, 802 are evacuated to a vacuum by an exhaust pump (not shown). Delivery bobbin 41
The conveyance direction of the belt-shaped substrate 10 wound around 1 is changed by the conveyance roller 412, and the n-layer film formation vacuum container 501, i
It is conveyed to the vacuum container 601 for layer formation and the vacuum container 701 for p layer formation (direction of arrow A). At that time, the band-shaped substrate 10
Is a magnet roller 5 which is a roller including a magnet.
07, 607, and 707 are held in a plane. The strip-shaped substrate 10 held on this plane is conveyed in the direction of arrow A, and processes such as film formation are continuously performed thereon. Then, the belt-like substrate 10 which has been subjected to the processing such as film formation in each vacuum vessel is wound by the winding bobbin 811 with the transport direction changed by the transport roller 812. When such an operation of the strip-shaped substrate 10 is performed, the scavenging gas supply pipes 452, 453, 552, 553, in the gas gates 451, 551, 651, and 751 are provided.
Scavenging gas is flowed from 652, 653, 752, and 753 to prevent gas from being mixed between the vacuum vessels.

FIG. 11 is a schematic cross-sectional view showing a case where the vacuum chamber for film formation constituting the apparatus of FIG. 10 is a chamber for forming a deposited film by a high-frequency plasma CVD method.

In the apparatus shown in FIG. 11, the belt-like substrate 10 is held by a magnet roller 107, and the inside of the chamber is exhausted to a predetermined pressure by an exhaust pump (not shown). Thereafter, the band-shaped substrate 10 is heated to a predetermined temperature by the lamp heater 103, and a gas serving as a raw material of the film to be deposited is supplied into the chamber from the gas supply pipe 105,
By applying high-frequency power from a high-frequency power supply (not shown) to the discharge electrode 106, plasma is generated in the discharge furnace 104, and a desired deposition film is deposited on the belt-like substrate 10.
Here, the magnet roller 107 is a means for holding the belt-shaped substrate 10 on a flat surface, and can be appropriately arranged at intervals depending on the size of the discharge furnace.

[0010] On the other hand, the strip-shaped substrate originally has an ear wave (undulation at the end), distortion, torsion, and the like, and further, the heating of the strip-shaped substrate by a lamp heater or plasma causes thermal deformation of the strip-shaped substrate. Therefore, due to these effects, there was a problem that abnormal discharge that diffused or leaked from the discharge furnace to the outside occurred, or that the strip-shaped substrate came into contact with the discharge furnace, causing damage to the strip-shaped substrate. As a method of performing such a method, there has been known a device that detects abnormal discharge that diffuses or leaks from the discharge furnace to the outside or detects contact between the strip-shaped substrate and the discharge furnace and adjusts the height of the magnet roller based on the signal. .

However, in the above-mentioned conventional apparatus, the magnet roller which is a holding means for the band-shaped substrate is arranged also on the film-forming region, and particularly when the film-forming region is elongated in the longitudinal direction of the band-shaped substrate. Multiple magnet rollers were required. For this reason, thermal expansion due to heating by the lamp heater, thermal distortion due to repeated heating and cooling, etc., deteriorate the slidability of the magnet roller, and dust is generated due to friction between the belt-shaped substrate and the magnet roller, resulting in accumulation. There has been a problem that the yield of the film is reduced and abnormal discharge is caused.

Further, since the magnet roller is always disposed above the film forming region and is in contact with the belt-like substrate, the temperature of the belt-like substrate heated by the lamp heater is cooled at the point of contact with the magnet roller, and the belt-like substrate is cooled. Since the temperature non-uniformity occurs, the characteristics of the deposited film tend to deteriorate, and the characteristics of the deposited film formed in different places on the belt-shaped substrate tend to be non-uniform.

Further, since the magnet roller is always disposed on the film forming area, the magnetic field generated by the magnet roller causes unevenness in the plasma generated in the discharge furnace, so that the characteristics of the deposited film may deteriorate. In addition, the characteristics of the deposited films formed at different locations on the belt-shaped substrate are different from each other.

[0014]

SUMMARY OF THE INVENTION It is an object of the present invention to reduce the slidability of the holding means due to the contact between the strip-shaped substrate and the holding means, to generate dust due to the sliding with the holding means, and to prevent the strip-shaped substrate from being slid. An object of the present invention is to provide an apparatus and method for forming a deposited film, which can prevent the occurrence of temperature unevenness of a substrate and the occurrence of unevenness of plasma caused by a magnetic field generated by a holding unit.

[0015]

According to the present invention, there is provided an apparatus for forming a deposited film, comprising: a plurality of vacuum vessels connected via a gas gate; a discharge furnace for generating plasma provided in the vacuum vessel; In the vacuum container, a deposition film forming apparatus provided with at least a transport unit for continuously transporting the belt-shaped substrate in the longitudinal direction thereof includes a holding unit using an electromagnet in order to hold the belt-shaped substrate. It is characterized by doing.

In the method of forming a deposited film according to the present invention, the belt-like substrate is passed through a plurality of vacuum vessels connected via gas gates while being continuously transported in the longitudinal direction thereof, and is provided in the vacuum vessel. Plasma in the discharge furnace
In the method for forming a deposited film in which a deposited film is continuously laminated on the strip-shaped substrate, the strip-shaped substrate is transported while being held by holding means using an electromagnet.

In other words, the apparatus and the method of the present invention are characterized in that when a deposited film is formed on a strip-shaped substrate by a so-called roll-to-roll method, the strip-shaped substrate is held by an electromagnet.

According to the above configuration, the magnetic force applied to the belt-like substrate can be adjusted steplessly by changing the current flowing through the coil of the electromagnet and controlling the magnetic flux density. By appropriately setting the magnetic force from the electromagnet with respect to the weight of the belt-shaped substrate, the belt-shaped substrate can be held at a predetermined transfer position without the belt-shaped substrate coming into contact with the electromagnet. Furthermore, since the magnitude of the magnetic force can be changed by controlling the current flowing through the coil without changing the height of the electromagnet which is the means for transporting the band-shaped substrate, it is necessary to sequentially change the conveyance trajectory of the band-shaped substrate. Is also possible.

In other words, according to the above configuration, when necessary, a required amount of magnetic force can be obtained at a necessary place, so that the strip-shaped substrate can be stably held without contact with the electromagnet. It is possible to do. As a result, there is no deterioration in the slidability of the magnet roller, which is a transport means, and no dust generation due to the rubbing between the strip-shaped substrate and the magnet roller, which has occurred in the conventional apparatus, and the yield of the deposited film is reduced and abnormal discharge is generated. Can be prevented. Further, since there is no contact between the belt-shaped substrate and the electromagnet serving as the transfer means, the occurrence of temperature unevenness, which has been a problem in the conventional apparatus, is eliminated. Furthermore, since the electromagnet can be driven when and where needed, with the required magnetic force, the occurrence of unevenness in the plasma in the discharge furnace due to the magnetic field generated by the electromagnet can be reduced as much as possible. Characteristics and unevenness of characteristics in a large area can be prevented.

[0020]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic sectional view showing an example of an apparatus for forming a deposited film according to the present invention, which is an example of a roll-to-roll type plasma CVD method. FIG. 1 shows a case where the configuration according to the present invention is applied to a plasma CVD apparatus, but the configuration according to the present invention can be applied to any film forming method such as a vapor deposition method and a sputtering method.

The apparatus shown in FIG.
1. Vacuum container 501 for n-layer film formation, vacuum container 6 for i-layer film formation
01, the vacuum container 701 for p-layer film formation and the vacuum container 801 for winding are gas gates 451, 551, 651, 75
1, and each vacuum vessel has an exhaust port 40.
2, 502, 602, 702, 802 are evacuated to a vacuum by an exhaust pump (not shown). Delivery bobbin 41
The conveyance direction of the belt-shaped substrate 10 wound around 1 is changed by the conveyance roller 412, and the n-layer film formation vacuum container 501, i
It is conveyed to the vacuum container 601 for layer formation and the vacuum container 701 for p layer formation (direction of arrow A). At that time, a plurality of electromagnets 1 according to the present invention are arranged in the transport direction of the band-shaped substrate,
The plurality of electromagnets 1 hold the strip-shaped substrate 10 in a non-contact manner by individually controlling the current supplied to the coil. The strip-shaped substrate 10 held in a non-contact state with the electromagnet 1 is transported in the direction of the arrow A, and a process such as film formation is continuously performed thereon. The transfer direction of the belt-shaped substrate 10 on which the processing such as film formation has been performed in each vacuum vessel is changed by the transfer roller 812, and the strip-shaped substrate 10 is wound by the winding bobbin 811. Such a band-like substrate 10
Is performed, the gas gates 451, 551,
In 651, 751, scavenging gas supply pipes 452, 45
3,552,553,652,653,752,753
The scavenging gas is further flown to prevent the gas from being mixed between the vacuum vessels.

FIG. 2 is a schematic sectional view showing an example in which the film forming vacuum vessel constituting the apparatus shown in FIG. 1 is a deposition film forming chamber by a high-frequency plasma CVD method.
FIG. 3 is a schematic sectional view taken along aa ′ in FIG. 2.

As shown in FIGS. 2 and 3, the electromagnet 1 which is a means for transporting the strip-shaped substrate 10 according to the present invention comprises the strip-shaped substrate 1.
A plurality are arranged in the conveyance direction and the width direction of 0. Then, by individually controlling the current flowing through the coils constituting the individual electromagnets 1, the belt-shaped substrate 10 is held in a non-contact state with the electromagnets 1, and the inside of the chamber is reduced to a predetermined pressure by an exhaust pump (not shown). Exhausted. Then, the band-shaped substrate 1
0 is heated to a predetermined temperature by a lamp heater 103, a gas as a raw material of a film to be deposited is supplied into the chamber from a gas supply pipe 105, and high frequency power is applied to a discharge electrode 106 from a high frequency power supply (not shown). As a result, plasma is generated in the discharge furnace 104, and a desired deposited film is deposited on the belt-like substrate 10. Here, the electromagnet 1
Is a means for holding the strip-shaped substrate 10 on a flat surface, and can be appropriately arranged at intervals depending on the size of the discharge furnace.

FIG. 4 is a schematic cross-sectional view showing another example in which the film forming vacuum vessel constituting the apparatus of FIG. 1 is a chamber for forming a deposited film by a high-frequency plasma CVD method, and FIG. FIG. 4 is a schematic sectional view taken along line bb ′ of FIG.
The chamber shown in FIG. 4 has a mechanism for detecting an abnormal discharge that diffuses or leaks from the discharge furnace 104 to the outside or a contact between the strip-shaped substrate 10 and the discharge furnace 104 and controls a current supplied to the electromagnet 1 based on these detection signals. FIG. 2 shows that the transport trajectory of the belt-shaped substrate 10 can be changed without contacting the electromagnet 1.
Is different from the chamber.

As shown in FIGS. 4 and 5, the electromagnet 1, the abnormal discharge detecting means 2 for detecting abnormal discharge diffusing or leaking from the discharge furnace 104 to the outside, and the contact between the strip substrate 10 and the discharge furnace 104 are determined. A plurality of contact detecting means 3 for detecting can be appropriately arranged.

For example, the occurrence of abnormal discharge that diffuses or leaks from the discharge furnace 104 to the outside is detected by the abnormal discharge detecting means 2 and the current flowing through the coil of the electromagnet 1 corresponding thereto is increased to reduce the magnetic force of the electromagnet 1. When the belt-like substrate 10 is strongly pulled, the transport trajectory is changed until the detection by the abnormal discharge detecting means 2 disappears. Further, the contact between the strip-shaped substrate 10 and the electric discharge furnace 104 is detected by the contact detecting means 3, and the magnetic force of the electromagnet 1 is adjusted by increasing or decreasing the current flowing through the coil of the electromagnet 1 corresponding thereto. Is pulled or separated, and the transport trajectory is changed until the detection by the contact detection means 3 disappears.

By providing the above-mentioned mechanism, it is caused by ear waves (undulation at the end), distortion, and torsion originally possessed by the strip-shaped substrate, and thermal deformation of the strip-shaped substrate caused by lamp heater heating or plasma heating. It is possible to prevent the occurrence of abnormal discharge and the generation of scratches on the strip-shaped substrate due to the contact between the strip-shaped substrate and the discharge furnace. This effect is particularly effective in a deposition film forming apparatus that processes a large number of strip-shaped substrates in a large area.

[0029]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments according to the present invention will be described below with reference to the drawings, but the present invention is not limited to these embodiments.

Example 1 In this example, a single-cell type photovoltaic device having the structure shown in FIG. 7 was used by using the apparatus shown in FIG. 1 provided with the deposition film forming chamber shown in FIG. 2 as a vacuum chamber for film formation. An element was manufactured. In FIG. 7, reference numeral 10 denotes a belt-like substrate;
51 is a back reflector film, 952 is an Ag thin film, 95
3 is a ZnO thin film, 961 is a semiconductor element, 962 is n-type amorphous silicon, 963 is i-type amorphous silicon, 964 is p-type amorphous silicon, and 971 is IT
O transparent conductive film.

Hereinafter, description will be made in accordance with the manufacturing procedure.

(1) First, the strip-shaped substrate 10 is sufficiently degreased and washed, and the lower electrode is made of a 100 nm thick Ag thin film and a 1 μm thick ZnO thin film by a sputtering method.
Using SUS430BA (width: 120 mm × length: 100 m × thickness: 0.13 mm) having a thickness of m, the tension was adjusted as shown in FIG. At this time, in each of the film forming vacuum vessels 501, 601 and 701, the current flowing through the coil constituting each electromagnet 1 is individually controlled so that the strip-shaped substrate 10 is held in a non-contact state. did.

(2) Each vacuum vessel 401, 501, 60
1, 701, 801 exhaust ports 402, 502, 602,
The lamp heater 50 provided in each vacuum chamber for film formation is evacuated from 702 and 802 by an exhaust pump (not shown).
3, 603, 703, the band-shaped substrate 10 is heated to a predetermined temperature, and the film forming gas inlets 505, 60 are formed.
5 and 705, a film forming gas and a scavenging gas supply pipe 4
52, 453, 552, 553, 652, 653, 75
H ₂ gas was introduced as scavenging gas from _2, 753, respectively.

(3) Next, RF power having a frequency of 13.56 MHz is applied to the discharge electrodes 506 and 706, and microwaves having a frequency of 2.45 GHz are introduced from the microwave introduction means 606, whereby each of the discharge furnaces 50
Glow discharge was generated in 4,604,704.

(4) By moving the belt-like substrate 10 at a predetermined transport speed, desired layers were formed by the plasma CVD method. Table 1 shows the manufacturing conditions of each film forming chamber.

[0036]

[Table 1]

(5) The strip-shaped substrate 10 on which the predetermined amorphous silicon film was deposited in the step (4) was taken out of the apparatus shown in FIG. 1 and cut into a substrate having a size of 5 cm × 5 cm.

(6) In a single-chamber vacuum evaporation apparatus (not shown), the substrate separated in the above step (5) is made of stainless steel having 25 holes 902 having a diameter of 6 mm as shown in FIG. Was set together with the mask 901. Then, on the p-type amorphous silicon film 964,
By depositing the ITO transparent conductive film 971 under the conditions shown in Table 2, a single-cell photovoltaic element having the configuration shown in FIG. 7 was produced.

[0039]

[Table 2]

(Comparative Example 1) This example is different from Example 1 in that amorphous silicon layers 962, 963, and 964 were formed using the conventional apparatus shown in FIG. 10 instead of the apparatus shown in FIG. That is, in the apparatus shown in FIG. 10, the holding means for the band-shaped substrate is not an electromagnet but a magnet roller, and the magnet roller is in contact with the band-shaped substrate when forming each amorphous silicon layer.

The other points were the same as in Example 1, and a photovoltaic element having the structure shown in FIG. 7 was produced.

The characteristics of the photovoltaic elements manufactured in Example 1 and Comparative Example 1 were evaluated. As a result, the photoelectric conversion efficiency of the device of Example 1 was improved by about 2% as compared with the device of Comparative Example 1, and the distribution of the photoelectric conversion efficiency in the width direction of the band-shaped substrate was 6% (Comparative Example 1). (Device) to 4% (device of Example 1).

Therefore, according to the apparatus and method for forming a deposited film on a strip-shaped substrate while holding the strip-shaped substrate by the holding means using the electromagnet according to the present invention, it is possible to improve the characteristics of the deposited film. It became clear that the unevenness of the characteristics in a large area can be suppressed.

Example 2 In this example, the deposited film forming chamber shown in FIG. 4 was used as a film forming vacuum vessel constituting the apparatus shown in FIG. 1 instead of the deposited film forming chamber shown in FIG. This is different from the first embodiment. That is, the chamber of FIG. 4 detects an abnormal discharge that diffuses or leaks from the discharge furnace 104 to the outside or a contact between the strip-shaped substrate 110 and the discharge furnace 104, and controls a current supplied to the electromagnet 1 based on these detection signals. In addition, a mechanism is provided for preventing abnormal discharge or contact by changing the transport trajectory of the band-shaped substrate 10 without contact with the electromagnet 1.

The other points were the same as in Example 1, and a photovoltaic element having the structure shown in FIG. 7 was produced.

The characteristics of the photovoltaic devices manufactured in Example 2 and Comparative Example 1 were evaluated. As a result, the photoelectric conversion efficiency of the device of Example 2 was improved by about 3% as compared with the device of Comparative Example 1, and the distribution of the photoelectric conversion efficiency in the width direction of the band-shaped substrate was 6% (Comparative Example 1). It was found that the ratio was improved from 3% (element) to 3% (element of Example 2). Further, the yield of Example 2 was about 10% higher than that of Comparative Example 1.

Therefore, by providing a means for detecting abnormal discharge or contact in addition to the means for holding the strip-shaped substrate using the electromagnet according to the present invention, the transport trajectory of the strip-shaped substrate 10 and the electromagnet 1 are brought into a non-contact state. In addition, it has been found that since the localization can be controlled more, unevenness of the characteristics of the deposited film and the characteristics in a large area can be further improved.

(Embodiment 3) In this embodiment, a triple-cell type photovoltaic device having the structure shown in FIG. 9 is used, instead of the device shown in FIG. 1, using a roll-to-roll type deposited film forming device shown in FIG. A power element was manufactured. In FIG. 9, reference numeral 1000 denotes a belt-like substrate, 3001 denotes a back reflector film, and 3002 denotes Ag.
A thin film, 3003 a ZnO thin film, 3011 a first semiconductor element, 3012 a first n-type amorphous silicon,
013 is a first i-type amorphous silicon, 3014 is a first p-type amorphous silicon, 3021 is a second semiconductor element, 3022 is a second n-type amorphous silicon, 3023 is a second i-type amorphous silicon, 3030
24 is a second p-type amorphous silicon, 3031 is a third semiconductor element, 3032 is a third n-type amorphous silicon, 3033 is a third i-type amorphous silicon,
3034 is a third p-type amorphous silicon, 3041
Is an ITO transparent conductive film.

Hereinafter, description will be made in accordance with the manufacturing procedure.

(1) As a belt-shaped substrate 1000, an Ag thin film 3002 having a thickness of 100 nm and a ZnO thin film 30
SUS430BA (width 1
20mm x length 100m x thickness 0.13mm)
As shown in FIG. 8, the tension was adjusted to such an extent that there was no slack.

At this time, the first n-layer deposition vacuum vessel 110
1. First i-layer film formation vacuum container 1201, first p-layer film formation vacuum container 1301, second n-layer film formation vacuum container 14
01, second i-layer deposition vacuum vessel 1501, second p-layer deposition vacuum vessel 1601, third n-layer deposition vacuum vessel 1
701, the third i-layer film forming vacuum vessel 1801 and the third p-layer film forming vacuum vessel 1901 individually control the current flowing through the coils constituting the electromagnets 1 to thereby control the band-shaped substrate. 10 was held in a non-contact state.

(2) Vacuum container for delivery 1001, vacuum containers for film formation 1101, 1201, 1301, 140
1, 1501, 1601, 1701, 1801, 190
1. While the air is exhausted from an exhaust port (not shown) of the take-up vacuum vessel 2001 by an exhaust pump (not shown), the band-shaped substrate 10 is predetermined by a lamp heater (not shown) provided in each film forming vacuum vessel. , And H ₂ gas as a scavenging gas from a scavenging gas supply pipe (not shown).
Each was introduced.

(3) Next, the discharge electrodes 1105 and 130
5, 1405, 1605, 1705, 1805, 190
RF power having a frequency of 13.56 MHz is applied to the RF power supply 5.
By introducing a microwave of 45 GHz, a glow discharge was generated in each discharge furnace (not shown).

(4) The belt-like substrate 1000 at a predetermined transport speed
Is moved in the direction of arrow B so that the band-shaped substrate 10
A first n-type amorphous silicon film 3012
The first i-type amorphous silicon film 3013, the first p
-Type amorphous silicon film 3014, second n-type amorphous silicon film 3022, second i-type amorphous silicon film 3023, second p-type amorphous silicon film 3024, third n-type amorphous silicon film 303
Second, a third i-type amorphous silicon film 3033 and a third p-type amorphous silicon film 3034 were successively stacked. Table 3 shows the manufacturing conditions of each film forming chamber.

[0055]

[Table 3]

(5) The strip-shaped substrate 1000 on which a predetermined amorphous silicon film has been deposited in the step (4) is shown in FIG.
, And cut into substrates having a size of 5 cm × 5 cm.

(6) Thereafter, an ITO transparent conductive film 3041 is deposited on the p-type amorphous silicon film 3034 under the same conditions as in the first embodiment, thereby forming a triple-cell type photovoltaic element having the structure shown in FIG. Produced.

(Comparative Example 3) In this example, in the apparatus configuration shown in FIG. 8, a conventional apparatus provided with a magnet roller instead of an electromagnet as holding means for a strip-shaped substrate was used, and each amorphous silicon layer 3012, 3013, 3014, 30
22, 3023, 3024, 3032, 3033 and 3
034 is different from the third embodiment. That is, in the conventional apparatus used in this example, the holding means for the strip substrate is not an electromagnet but a magnet roller, and the magnet roller is in contact with the strip substrate when forming each amorphous silicon layer.

The other points were the same as in Example 3, and a photovoltaic element having the structure shown in FIG. 9 was produced.

The characteristics of the photovoltaic elements manufactured in Example 3 and Comparative Example 3 were evaluated. As a result, the photoelectric conversion efficiency of the device of Example 3 was improved by about 4% as compared with the device of Comparative Example 3, and the distribution of the photoelectric conversion efficiency in the width direction of the band-shaped substrate was 9% (Comparative Example 3). It was found that the improvement was 6% (element of Example 3) to 6% (element of Example 3).

Therefore, according to the apparatus and method for forming a deposited film on a band-shaped substrate while holding the band-shaped substrate with the holding means using an electromagnet according to the present invention, a triple-cell type photovoltaic element is manufactured. In this case, it is clear that the characteristics of the deposited film can be improved and the unevenness of the characteristics in a large area can be suppressed.

[0062]

As described above, according to the present invention,
By using an electromagnet as the holding means of the band-shaped substrate,
When necessary, the necessary magnetic force can be obtained in the required place, so that the strip-shaped substrate can be stably held while keeping the strip-shaped substrate and the electromagnet in a non-contact state. As a result, the slidability of the holding means is deteriorated due to the contact between the strip-shaped substrate and the holding means, the generation of dust and the temperature unevenness of the strip-shaped substrate caused by the sliding with the holding means, and the Thus, an apparatus and a method for forming a deposited film that can prevent generation of unevenness in plasma due to an emitted magnetic field can be obtained. Therefore, according to the present invention, it is possible to significantly improve the yield and characteristics of the deposited film and the uniformity of the characteristics.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing one example of a deposition film forming apparatus according to the present invention.

FIG. 2 is a schematic cross-sectional view showing an example in which a film forming vacuum container constituting the apparatus of FIG. 1 is a deposited film forming chamber by a high-frequency plasma CVD method.

FIG. 3 is a schematic cross-sectional view taken along aa ′ of FIG. 2;

FIG. 4 is a schematic cross-sectional view showing another example in which the film forming vacuum vessel constituting the apparatus of FIG. 1 is a deposited film forming chamber by a high-frequency plasma CVD method.

FIG. 5 is a schematic sectional view taken along line bb ′ of FIG. 4;

FIG. 6 is a schematic plan view showing an example of a mask used for producing an ITO transparent conductive film.

FIG. 7 is a schematic sectional view showing an example of a photovoltaic device according to the present invention.

FIG. 8 is a schematic sectional view showing another example of the deposition film forming apparatus according to the present invention.

FIG. 9 is a schematic sectional view showing another example of the photovoltaic element according to the present invention.

FIG. 10 is a schematic cross-sectional view showing an example of a conventional apparatus for forming a deposited film by a roll-to-roll method.

FIG. 11 is a diagram illustrating a film forming vacuum container constituting the apparatus of FIG.
It is a typical sectional view showing the case of a deposition film formation chamber by a high frequency plasma CVD method.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Electromagnet, 2 Abnormal discharge detection means, 3 Contact detection means, 10, 1000 Strip-shaped substrate, 411, 1002 Feeding bobbin, 811, 2002 Winding bobbin, 412, 812, 1003, 2003 Transport roller, 401, 1001 Feeding Vacuum container, 101 Vacuum container for film formation, 501, 1101, 1401, 1701 Vacuum container for n-layer film formation, 601, 1201, 1501, 1801 Vacuum container for i-layer film formation, 701, 1301, 1601, 1901 p-layer formation Vacuum container for film, 801, 2001 Vacuum container for winding, 402, 502, 602, 702, 802 Exhaust port, 451, 551, 651, 751, 1051, 115
1, 1251, 1351, 1451, 1551, 165
1,1751,1851,1951 gas gate, 452,453,552,553,652,653,7
52, 753 Separation gas supply pipe, 103, 503, 603, 703 Lamp heater, 104, 504, 604, 704 Discharge furnace, 105, 505, 605, 705 Deposition gas introduction pipe, 106, 506, 706, 1105, 1305, 140
5, 1605, 1705, 1805, 1905 Discharge electrode, 606, 1206, 1506 Microwave introduction means, 107, 507, 607, 707 Magnet roller, 901 Stainless steel mask, 902 hole, 951, 3001 Back reflector film, 952, 3002 Ag thin film, 953, 3003 ZnO thin film, 961, 3011, 3021, 3031 semiconductor element, 962, 3012, 3022, 3032 n-type amorphous silicon, 963, 3013, 3023, 3033 i-type amorphous silicon, 964, 3014, 3024, 3034 p-type amorphous silicon, 971, 3041 transparent conductive film.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Masahiro Kanai 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (Reference) 4M104 AA10 BB01 BB36 CC01 DD37 DD44 FF13 GG05 HH20 5F045 AA08 AA09 AB04 AC01 AD06 AD07 AE17 AE21 AF10 BB15 BB20 CA13 DA52 DP22 DQ15 EK12 EM01 GB15 HA24 5F051 AA05 BA14 BA15 CA16 CA22 CA27 CA40 DA04 DA17 FA02 GA02 GA05

Claims (12)

[Claims] 1. A plurality of vacuum vessels connected via gas gates, a discharge furnace for generating plasma provided in the vacuum vessels, and a belt-like substrate continuously extending in the longitudinal direction in the plurality of vacuum vessels. An apparatus for forming a deposited film, wherein the apparatus for forming a deposited film includes at least a transporting means for transporting the deposited substrate, and a holding means using an electromagnet for holding the strip-shaped substrate. 2. The apparatus according to claim 1, wherein said strip-shaped substrate is made of a magnetic material. 3. The holding means using an electromagnet is provided with a mechanism for changing a transport trajectory of the strip-shaped substrate by adjusting a current supplied to a coil of the electromagnet. 3. The apparatus for forming a deposited film according to claim 1. 4. The continuous deposition film forming apparatus according to claim 3, wherein the electromagnet and the belt-like substrate are arranged in a non-contact state. 5. An abnormal discharge detecting means for detecting abnormal discharge diffusing or leaking to the outside of the electric discharge furnace, and a mechanism for changing a transport trajectory of the strip-shaped substrate based on a signal generated by the abnormal discharge detecting means. The apparatus for continuously forming a deposited film according to claim 3, wherein: 6. A contact detecting means for detecting contact between the strip-shaped substrate and the electric discharge furnace, and a mechanism for changing a transport trajectory of the strip-shaped substrate based on a signal generated by the contact detecting means. The apparatus for continuously forming a deposited film according to claim 3, wherein: 7. While continuously transporting the strip-shaped substrate in the longitudinal direction, the strip-shaped substrate is passed through a plurality of vacuum vessels connected via gas gates, and plasma is generated in a discharge furnace provided in the vacuum vessel. In the method of forming a deposited film in which a deposited film is continuously laminated on the strip-shaped substrate, the strip-shaped substrate is transported while being held by holding means using an electromagnet. 8. The method for forming a deposited film according to claim 7, wherein a magnetic material is used as said strip-shaped substrate. 9. The method according to claim 7, wherein the transport trajectory of the strip-shaped substrate is changed by adjusting a current supplied to a coil of an electromagnet constituting the holding unit. 10. The method for forming a deposited film according to claim 9, wherein an electromagnet constituting said holding means and said strip-shaped substrate are brought into a non-contact state. 11. A transport trajectory of the strip-shaped substrate is detected by detecting an abnormal discharge that diffuses or leaks outside the discharge furnace and adjusting a current supplied to the coil of the electromagnet based on the detection signal of the abnormal discharge. The method for forming a deposited film according to claim 9, wherein the abnormal discharge is eliminated by changing. 12. A conveyance trajectory of the band-shaped substrate is changed by detecting a contact between the band-shaped substrate and the discharge furnace, and adjusting a current supplied to a coil of the electromagnet based on a detection signal of the contact. The method for forming a deposited film according to claim 9, wherein the contact between the strip-shaped substrate and the discharge furnace is eliminated.