JPH0927459A - Processing equipment for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent an abrupt temperature rise in a plasma film formation region and enable accurate temperature control for higher productivity in semiconductor device processing, by heating strip substrates in a plurality of film formation spaces immediately before the area of plasma film formation using microwave power. SOLUTION: A heating means is constructed of a first temperature controller 409, a first infrared ray lamp heater 410, a second temperature controller 411 and a second infrared ray lamp heater 412. Chamber baking prior to deposition film formation is performed using this heating means. When a deposition film is formed by applying microwave power, the second infrared ray lamp heater 412 is turned off and only the first infrared ray lamp heater 410 is used for heating. This prevents an abrupt temperature rise in the plasma film formation region due to use of microwave power in the film formation spaces. Further, accurate temperature control is made feasible by constituting thermocouples, and temperature rise is prevented by installing a cooling mechanism in the film formation spaces.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus or a manufacturing method thereof, and more particularly to an apparatus or method capable of continuously forming laminated thin film elements such as photovoltaic elements on a belt-shaped substrate.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor device manufacturing apparatus for continuously forming a thin film on a surface of a belt-shaped substrate, for example, a manufacturing method by a continuous plasma CVD method employing a roll-to-roll method. A device is disclosed in U.S. Pat. No. 4,400,409. In this manufacturing apparatus, a plurality of glow discharge regions are provided,
A device having a semiconductor junction is continuously formed by continuously transporting a strip-shaped substrate having a desired width and sufficiently long in the longitudinal direction of the strip-shaped substrate along a path that sequentially penetrates the glow discharge region. It is described that it is possible. Further, in this manufacturing apparatus, a gas gate chamber is provided between each film forming space in order to prevent the film forming gas or the dopant gas used when forming each semiconductor layer from diffusing and mixing into another glow discharge region. . Specifically, each glow discharge region is separated by a slit-shaped separation passage, and a flow of a separation gas such as Ar or H ₂ is formed in the separation passage. Or, by providing exhaust means in the separation passage,
A means for exhausting the gas flowing from the adjacent film forming chambers is adopted. On the other hand, a plasma process using microwaves has been receiving attention in recent years. Microwave is the same as conventional RF (R
Since the frequency is higher than that in the case of using the audio frequency, it is possible to increase the energy density, and it is suitable for efficiently generating and maintaining plasma. For example, US Pat. No. 4,517,22
No. 8 and No. 4,504,518,
A method of depositing and forming a thin film on a substrate having a small area in a microwave glow discharge plasma under low pressure has been disclosed. However, according to microwave, discharge can be performed under low pressure as compared with RF. Prevents polymization of active species that causes deterioration of characteristics, not only obtains high quality deposited film, but also suppresses generation of powder such as polysilane in plasma, and dramatically improves deposition rate. It is supposed to be achieved.

[0003]

However, the above-mentioned prior art has the following problems. That is, when a microwave process is incorporated in the roll-to-roll film forming apparatus, when microwave power is applied in the film forming space to form a film on a substrate, a microwave discharge plasma region is formed. Since the temperature of the strip-shaped substrate rises sharply, it has been difficult to perform accurate temperature control by the conventional heating method. Further, the thermocouple in contact with the strip-shaped substrate for temperature control is affected by radiant heat from the heater and non-contact (floating of the thermocouple) generated by the transport of the strip-shaped substrate. It also contributed to the difficulty.

Therefore, the present invention solves the above-mentioned problems, does not cause a rapid temperature rise in the plasma film formation region by the microwave power in the film formation space, and enables accurate temperature control, thus improving productivity. It is an object of the present invention to provide a high semiconductor device manufacturing apparatus or a manufacturing method thereof.

[0005]

In order to achieve the above object, the present invention does not perform heating in the microwave discharge plasma region opening (deposition region) in the deposition space on the deposition region, This is performed immediately before the film formation region.
That is, the semiconductor device manufacturing apparatus of the present invention is provided with a plurality of film formation spaces in which thin films can be independently formed.
In a manufacturing device of a semiconductor element for continuously forming a thin film on a surface of a belt-shaped substrate arranged in the film formation space by introducing a microwave power while introducing a source gas through a source gas introducing means, A heating means is provided for heating the strip-shaped substrates in the plurality of film formation spaces immediately before the plasma film formation region by microwave power. In the present invention, the film forming temperature by this heating means is configured to be controlled by a thermocouple on the film forming region,
This thermocouple can prevent non-contact with the substrate due to floating by pressing the thermocouple onto the surface of the belt-shaped substrate and covering it. Further, by providing a cooling mechanism for cooling the strip-shaped substrate in the film forming space, it is possible to further suppress the temperature rise, but it is preferable that the cooling mechanism has a block or roller shape. Furthermore, in the method for manufacturing a semiconductor element of the present invention, the heating of the strip-shaped substrate in the plurality of film formation spaces is not performed on the plasma film formation region by microwave power, but immediately before entering the film formation region. In the present invention, the applied power density of microwave power is 0.5.
It is preferably w / cm ² or less. In the present invention, it is effective to introduce RF bias power or DC bias power together with microwave power to perform film formation. At that time, the applied power density of the bias power is 1 w / c.
m ² or less.

[0006]

BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, as described above, the microwave discharge plasma region opening (film forming region) in the film forming space is formed.
By not performing heating in the film formation region, but immediately before the film formation region, it is possible to prevent a rapid temperature rise in the plasma film formation region, and it is also possible to prevent the temperature from being increased by the thermoelectric control. The pair is installed by eliminating the effects of non-contact (floating of thermocouple) caused by radiant heat from the heater and conveyance of the strip-shaped substrate, that is, by pressing the cover onto the surface of the strip-shaped substrate and covering it Accurate temperature control can be realized by eliminating non-contact with the substrate due to. Further, by installing the cooling mechanism in the microwave discharge plasma region in the film forming space, it becomes possible to further improve the effect of suppressing the temperature rise. This will be described below with reference to the drawings. As a semiconductor device manufacturing apparatus for continuously forming a thin film used in the present invention, for example, the roll
An example is a two-roll type device. Examples of semiconductor elements include integrated circuits typified by LSI, various sensors typified by semiconductor lasers, and various photovoltaic elements typified by solar cells. Particularly, the manufacturing apparatus of the present invention is preferably applied to a solar cell that requires a large-area light receiving section. For example, a solar cell is shown in FIG.
The base structure 601 having the layer structure shown in FIG.
On the surface of the n-type semiconductor layer 602, the i-type semiconductor layer 60
3, a p-type semiconductor layer 604 and an ITO transparent conductive film 605, which are layered layers in this order. In FIG. 1, 101, 102, and 103 are film forming chambers by a microwave plasma CVD method, and 104 and 105 are a supply chamber and a winding chamber for a strip-shaped substrate. The film forming chambers are connected by a gas gate 106. 10
Reference numeral 7 denotes a belt-shaped substrate, which passes through three film forming chambers before being conveyed from the supply chamber to the winding chamber, and has three layers of functional deposition films on its surface, for example, a semiconductor film for a solar cell having a pin structure. Is formed. In each of the film forming chambers 101 to 103, a heater 108 for heating the substrate, gas supply means (not shown)
A gas introduction pipe 109 for introducing the film forming gas supplied from the film forming chamber into the film forming chamber, an exhaust pipe 110 for exhausting the film forming chamber by an exhaust means (not shown), and giving energy to the film forming gas in the film forming chamber for discharge. Waveguide 11 for supplying microwave power to generate
1 is provided, and a deposited film is formed by the microwave CVD method. Reference numeral 113 is a film formation region adjusting plate, 114 is a pressure gauge, and 115 and 116 are exhaust pipes for exhausting the supply chamber and the winding chamber. Film forming chamber 10 shown in FIG.
In 1, the rectangular parallelepiped film forming space shown in FIG. 3 is provided. This film forming space is formed by a film forming container 301 and a strip-shaped substrate 302. Film forming chamber 101 and film forming container 3
01 is electrically connected and is at ground potential. An applicator 303 for introducing microwave energy is attached in the film formation space. The applicator 303 is connected to a microwave power source (not shown) by a waveguide (not shown). Further, a gas introducing portion 304 for introducing the raw material gas is attached to the bottom surface of the film forming container, and a large number of gas releasing holes for releasing the raw material gas are arranged so as to face the strip-shaped substrate. ing. The gas introduction unit 304 is connected to a gas supply facility (not shown). The exhaust punching board 3 is provided on the opposite side wall of the applicator, that is, on the front side wall of the film forming container 301.
05 is attached to confine microwave energy in the film formation space and is connected to an exhaust pipe (not shown). The film forming chambers 102 and 103 in FIG. 1 also have the same configuration as described above.

The plurality of film forming spaces are, for example, a charging chamber in which the strip-shaped substrate is first charged and subjected to a depressurization process, a heating chamber for raising the transported strip-shaped substrate to an appropriate temperature, and is transported. A film forming chamber for forming an appropriate thin film on the surface of the strip-shaped substrate, a cooling chamber for lowering the conveyed strip-shaped substrate to an appropriate temperature, and a take-out chamber for returning the strip-shaped substrate having completed film formation to atmospheric pressure. Can be given.
In particular, a plurality of film forming chambers may be continuously provided to form a plurality of thin films of different materials. At this time, a means for preventing the influence of the adjacent film forming chambers by providing a gas gate chamber described below between the film forming chambers is also used. As a means for continuously transporting the strip-shaped substrate in a plurality of film forming chambers in the longitudinal direction of the strip-shaped substrate, for example, roll-to-roller shown in FIG.
A roll method can be used. In this system, the strip-shaped substrate wound on the drum arranged in the supply chamber 104 is moved by the roll-shaped winding device provided in the winding chamber 105 through the plurality of film formation spaces. It is important that the strip-shaped substrate is transported at a constant speed through the plurality of film-forming spaces without causing wrinkles, twists, warps, etc. in its surface. The transport speed at this time is appropriately selected depending on the film forming conditions (film thickness of semiconductor film, forming speed, etc.), but is preferably 200 mm / min to 2000 mm / m.
in. The gas gate chamber is a vacuum container provided for the purpose of separating and independently forming the film-forming chamber and the supply chamber and the winding chamber for the strip-shaped substrate, and for continuously transporting the strip-shaped substrate through them. is there. Further, when a plurality of thin films made of different materials are formed, they are also provided to separate adjacent film forming chambers. As the gas gate chamber, for example, one having the configuration of FIG. 2 (enlarged sectional view of FIG. 1) can be mentioned. The opening cross section adjusting member 201 is installed in a flat plate shape above and below the strip-shaped substrate 202, and between the deposition surface of the strip-shaped substrate,
A predetermined gap is provided. This gap is preferably set to a width of, for example, 1 to 5 mm for the purpose of reducing the conductance and preventing the diffusion and mixing of the gas between the film forming chambers. The material of the opening cross-section adjusting member 201 is ceramics such as alumina, which is less likely to be thermally deformed or worn, glass such as quartz,
Alternatively, the composite material or the like basically forms a flat plate. However, in order to stabilize the gas flow on the back surface of the substrate, a groove or the like may be provided in the longitudinal direction of the substrate. Furthermore,
The separation gas is introduced into the gas gate chamber from the separation gas introduction pipe 203 (112 in FIG. 1), and the film formation gas in the film formation chamber that enters the gas gate chamber is pushed back. As the separation gas, for example, Ar, He, N
Examples include rare gases such as e, Kr, Xe, and Rn, or diluent gases such as H ₂ for forming a semiconductor film. The gate gas flow rate is
Although it is appropriately determined by the conductance of the entire gas gate chamber, for example, if a point at which the pressure is maximized is provided approximately in the center of the gas gate, the gate gas will flow from the center of the gas gate to the vacuum container side on both sides, It is possible to minimize mutual gas diffusion between the vacuum containers.

In the present invention, it is preferable that the band-shaped substrate has a small amount of deformation and distortion at a temperature required for manufacturing a semiconductor film, has a desired strength, and has conductivity. Specifically, thin plates of metal such as stainless steel, aluminum and its alloys, iron and its alloys, copper and its alloys, and their composites, and metal thin films of different materials and / or SiO ₂ , S on their surfaces.
An insulating thin film such as i ₃ N ₄ or AlN is formed by sputtering, vapor deposition,
An example of which is surface coating treatment by a plating method or the like. Further, polyimide, polyamide, polyethylene terephthalate, heat-resistant resinous sheet such as epoxy, or a simple substance or alloy on the surface of a composite of these, glass fiber, carbon fiber, boron fiber, metal fiber, etc., and transparent conductive oxidation Thing (TC
O) and the like are subjected to a conductive treatment by a method such as sputtering, vapor deposition, plating and coating. In addition, the thickness of the belt-shaped substrate is as thin as possible in consideration of cost, storage space, etc. as long as it is within a range in which the curved shape produced during the transportation by the transportation means is maintained. Is desirable. Specifically, it is preferably 0.01 mm
It is desirable that the thickness is 1 mm, most preferably 0.05 mm to 0.5 mm, but when a thin plate made of metal or the like is used, the desired strength can be easily obtained even if the thickness is relatively thin. The width of the strip-shaped substrate is not particularly limited and is determined by the size of the semiconductor film forming means or the container thereof. The length of the belt-shaped substrate is not particularly limited, and may be such a length that it can be wound into a roll, and a long one is further lengthened by welding or the like. Is also good.

In the semiconductor device manufacturing apparatus of the present invention, the heating means is provided as a first temperature control device 40 as shown in FIG. 4 which is an enlarged view of the film forming chamber portion in FIG. 1, for example.
9, a first infrared lamp heater 410, a second temperature control device 411, and a second infrared lamp heater 412. Chamber baking before forming a deposited film is performed by heating these, and deposition is performed by applying microwave power. During film formation, the second infrared lamp heater 412 is turned off and heating is performed only by the first infrared lamp heater 410, thereby preventing a rapid temperature rise in the plasma film formation region due to microwave power in the film formation space. It is a thing.
At the same time, the structure of the thermocouple as described above enables accurate temperature control, and the effect of suppressing the temperature rise is further improved by installing a cooling mechanism in the film formation space.

[0010]

EXAMPLES Hereinafter, this will be described more specifically based on examples. Example 1 A pin type amorphous silicon solar cell was produced on the surface of a strip-shaped substrate by the following operation using the semiconductor device manufacturing apparatus shown in FIG. First, the strip-shaped substrate 107 is unwound from the supply chamber 104 and connected to the gas gate chamber 106 to form three film formation chambers 101 to 103.
And was set so as to be wound up in the winding chamber 105. As the belt-shaped substrate 107, SUS430BA having a width of 30 cm, a length of 50 m and a thickness of 0.2 mm was used. In addition, the slit height of the gas gate chamber 106 is all 10
mm. Next, the strip substrate supply chamber, the winding chamber,
After sufficiently exhausting each film forming chamber to the level of 10 ⁻⁶ Torr by an exhaust device (not shown) through the exhaust pipes 110, 115, 116, while continuously exhausting, each gas is introduced from the gas introduction pipe 109 to each film forming chamber. A film gas was introduced, and while observing the pressure gauge 114, the exhaust amount was adjusted to adjust each film forming chamber to a predetermined pressure. In the slit of the gas gate 106, H ₂ as a separating gas is supplied from the upper and lower gas introducing pipes 112 at 30
0 sccm was introduced. Band-shaped substrate 107 with heater 108
The microwave waveguide 11 is heated at a predetermined temperature from the back side of the
Microwave power was introduced from 1 to cause glow discharge in each film forming chamber, and the belt-shaped substrate was transported at a constant speed to continuously form an n, i, p-type amorphous silicon film on the belt-shaped substrate. A method of heating the strip-shaped substrate in the present invention at this time will be described below with reference to FIG. FIG. 4 is an enlarged view of the film forming chamber portion in FIG. In FIG.
Reference numeral 1 is a film forming container, 402 is a gas gate, and 403 is a strip-shaped substrate. 404 is a waveguide for supplying microwave power, 4
Reference numeral 05 denotes a gas introducing pipe for introducing a film forming gas into the film forming chamber, 406
Is an exhaust pipe, and 407 is a pressure gauge. Further, reference numeral 408 is a film formation region adjusting plate, and a deposited film is formed in the opening portion. Reference numerals 409 to 412 are substrate heaters,
9 is a first temperature control device, 410 is a first infrared lamp heater, 411 is a second temperature control device, and 412 is a second temperature control device.
This is an infrared lamp heater. The chamber baking before the formation of the deposited film was performed by heating the first and second temperature control devices by controlling the thermocouples 413 and 414 directly below the respective temperature control devices. At the time of forming the deposited film to which microwave power was applied, the second infrared lamp heater 412 was turned off, and heating was performed only by the first infrared lamp heater 410. In addition, the temperature control at that time is performed by the thermocouple 414 on the film formation region.
This was performed using Further, a thermocouple (not shown) for temperature monitoring was installed in the film formation region, and the substrate temperature was confirmed at several points. Here, a method for mounting the control thermocouple will be described. Conventionally, the thermocouple has been in contact with the strip-shaped substrate, but due to the transfer of the strip-shaped substrate, non-contact (floating of the thermocouple) occurs, and it is affected by the radiant heat from the heating heater section, making accurate temperature control difficult. Met. Therefore, FIG.
It was installed as shown in. The belt-shaped substrate 501 is covered with a cover 503 so that the thermocouple 502 is in contact therewith,
Moreover, the shape is made to hold down. The cover was made of SUS. By this installation method, the problems in the above thermocouple were solved and experiments were conducted. The substrate heating temperature in each film forming chamber is 250, 300, 1 for n, i, and p layers, respectively.
50 ° C. In addition, the applied power of microwave is 0.1 to
It was changed to 0.8 w / cm ² and the temperature change and characteristics in the film formation region were confirmed.

The strip-shaped substrate on which the amorphous silicon film obtained by the above method is deposited is taken out from the roll-to-roll apparatus and cut into a size of 10 cm × 10 cm,
It was placed in a single-chamber vacuum vapor deposition apparatus, and an ITO transparent conductive film was laminated by a vacuum vapor deposition method to fabricate a solar cell shown in the schematic sectional view of FIG. In FIG. 6, 601 is a substrate,
602 is an n-type layer, 603 is an i-type layer, 604 is a p-type layer, 6
Reference numeral 05 is an ITO transparent conductive film.

(Comparative Example 1) In this example, the method of heating the strip-shaped substrate at the time of forming the deposited film by applying microwave power is as follows.
The first and second temperature control devices in FIG. 4 were respectively controlled by thermocouples 413 and 414 directly below to perform heating. The other points were the same as in Example 1. From the above experiment, the following results were obtained. (1) FIG. 7 shows changes in the substrate temperature of the i-layer monitored in the film formation region in Example 1 and Comparative Example 1. This shows the difference between the outlet temperature and the inlet temperature in the film formation region when the microwave applied power density is changed in the i layer having the largest temperature change. From this, it can be seen that the temperature change in the film formation region in Example 1 (present invention) is smaller than that in Comparative Example 1 (conventional). It is considered that the temperature rise in the latter half of the film formation region was large due to the heating by the microwave plasma and the heater in the upper part of the film formation region in the past, but the heating method in the present invention made it possible to suppress the temperature rise. . (2) Regarding the solar cells produced in Example 1 and Comparative Example 1 with the same formulation (the same microwave power), the characteristics and the survival rate of the solar cell of Example 1 were better.
Here, the survival rate is a rate with respect to 10 lcm square solar cells having an open circuit voltage of 0.5 v or more. (3) In the solar cell manufactured by the heating method (Example 1) of the present invention, characteristics at each microwave power density,
As a result of evaluating the temperature change in the film formation region together,
It was confirmed that the power density showing good characteristics and capable of stably controlling the film forming temperature was 0.5 w / cm ² or less. From the above, by the heating method in the present invention,
The temperature rise in the film formation region was reduced, and it became possible to fabricate solar cells with excellent characteristics and survival rates.

[Embodiment 2] In this embodiment, in the embodiment 1, when the deposited film is formed on the i layer, the microwave power and R
F-bias power was supplied to produce a solar cell. The other points were the same as in Example 1. As a result, the following results were obtained. (1) In Example 2, as in Example 1, the characteristics at each RF bias power density and the temperature change in the film forming region were evaluated together, and as a result, good characteristics were shown and the film forming temperature was It was confirmed that the RF bias applied power density that can be stably controlled is 1 w / cm ² or less.

[Embodiment 3] In this embodiment, in addition to the heating method in Embodiment 1, as shown in FIG. 8, a cooling mechanism for the substrate is installed in the film forming region. In FIG. 8, reference numeral 815 is a cooling block, and the others are the same as in FIG. FIG. 9 is a schematic diagram of this cooling block. The cooling pipe 9 is attached to the block 901.
02 is piped, and cooling water or air is flowing. The block is in contact with the upper surface of the strip-shaped substrate 903, and the strip-shaped substrate is cooled thereby. The material of the block is preferably Al or the like, and the cooling pipe is preferably a vacuum component, and is preferably a metal such as SUS with less outgassing.
The block needs to be installed so as not to deform the strip-shaped substrate and to smoothly convey the scratched material without changing the speed. A pin-type amorphous silicon solar cell was manufactured on the surface of the strip-shaped substrate using the semiconductor device manufacturing apparatus of FIG. 1 in which this cooling mechanism was installed. The other points were the same as in Example 1. From the above experiment, the following results were obtained. (1) Changes in the substrate temperature of the i layer monitored in the film formation region in Example 3 are shown in FIG. This shows the difference between the outlet temperature and the inlet temperature in the film formation region when the microwave applied power density is changed in the i layer having the largest temperature change. As a result, the temperature change in the film formation region in Example 3 was the smallest as compared with Example 1 and Comparative Example 1,
It was confirmed that the control was stable. By installing a cooling mechanism, it became possible to further suppress the temperature rise.

[0015]

As described above, according to the present invention, the heating of the strip-shaped substrate in the film formation space is performed immediately before the plasma film formation region by the microwave power. It is possible to prevent the rise of temperature, and to install the thermocouple for temperature control by eliminating the effects of non-contact (floating of thermocouple) caused by radiant heat from the heater and conveyance of the strip-shaped substrate, that is, the strip-shaped By pressing and covering the surface of the substrate with the cover, it is possible to eliminate non-contact with the substrate due to floating and realize accurate temperature control. Further, by installing the cooling mechanism in the microwave discharge plasma region in the film forming space, it becomes possible to further improve the effect of suppressing the temperature rise. According to the above, the present invention can realize a semiconductor device manufacturing apparatus and a manufacturing method thereof which have stable and good characteristics from the start to the end of film formation and have high productivity.

[Brief description of drawings]

FIG. 1 is a schematic view showing an example of a semiconductor device manufacturing apparatus according to the present invention.

FIG. 2 is a schematic diagram showing a structure of a gas gate of the semiconductor device manufacturing apparatus according to the present invention.

FIG. 3 is a schematic view showing a structure of a film forming space of the semiconductor device manufacturing apparatus according to the present invention.

FIG. 4 is a schematic view showing a structure inside a film forming chamber of the semiconductor device manufacturing apparatus in Example 1.

FIG. 5 is a schematic view showing an example of a method for installing a thermocouple for temperature control according to the present invention.

6 is a schematic cross-sectional view showing the layer structure of the solar cell manufactured in Example 1. FIG.

FIG. 7 is a graph showing a temperature change in an i-layer deposition region with respect to a microwave applied power density in Example 1 and Comparative Example 1.

FIG. 8 is a schematic view showing the structure of a film forming chamber having a cooling mechanism in Example 3.

FIG. 9 is a schematic view showing an example of the structure of a cooling mechanism in the third embodiment.

FIG. 10 is a graph showing a temperature change in an i-layer deposition region with respect to a microwave applied power density in Example 1, Comparative Example 1 and Example 3.

[Explanation of symbols]

101, 102, 103 film forming chamber 104 supply chamber for strip-shaped substrate 105 winding chamber for strip-shaped substrate 106, 402, 802 gas gate 107, 202, 302, 403, 501, 803, 9
03 band-shaped substrate 108 heating heater 109 gas introduction pipe 110, 115, 116, 406, 806 exhaust pipe 111, 404, 804 microwave waveguide 112, 203 separation gas introduction pipe 113, 408, 808 film formation region adjusting plate 114, 407, 807 Pressure gauge 201 Opening cross-section adjusting member 301, 401, 801 Film forming container 303, Microwave introduction applicator 304, 405, 805 Gas introduction part 305, Exhaust punching board 409, 809 First temperature control device 410, 810 First infrared lamp heater 411, 811 Second temperature control device 412, 812 Second infrared lamp heater 413, 414, 502, 813, 814 Temperature control thermocouple 503 Thermocouple mounting cover 601 Base body 602 n-type layer 603 i-type layer 604 p-type 605 transparent conductive layer 815 base cooling mechanism 901 base cooling block 902 cooling pipe

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Goto Yoshino 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Masahiro Kanai 3-30-2 Shimomaruko, Ota-ku, Tokyo Kya Non non corporation

Claims (9)

[Claims] 1. A raw material gas is introduced through a raw material gas introduction means into a plurality of film forming spaces in which thin films can be independently formed, and microwave power is introduced into the film forming spaces. In a semiconductor device manufacturing apparatus for continuously forming a thin film on the surface of a band-shaped substrate arranged, heating of the band-shaped substrates in the plurality of film formation spaces is performed immediately before a plasma film formation region by microwave power. An apparatus for manufacturing a semiconductor element, comprising: 2. The heating means controls the film forming temperature by a thermocouple on the film forming region.
An apparatus for manufacturing a semiconductor element according to 1. 3. The apparatus for manufacturing a semiconductor element according to claim 2, wherein the thermocouple is covered by being pressed onto the surface of the strip-shaped substrate by a cover. 4. The manufacturing of a semiconductor device according to claim 1, wherein a cooling mechanism for cooling the strip-shaped substrate is provided in the film forming space. apparatus. 5. The semiconductor device manufacturing apparatus according to claim 4, wherein the cooling mechanism has a block or roller shape. 6. A raw material gas is introduced through a raw material gas introduction means and microwave power is introduced into a plurality of film forming spaces in which thin films can be independently formed, respectively, and the film forming spaces are introduced. In a method of manufacturing a semiconductor element in which a thin film is continuously formed on a surface of a band-shaped substrate arranged, heating of the band-shaped substrate in the plurality of film forming spaces is not performed on a plasma film forming region by microwave power. A method for manufacturing a semiconductor element, which is performed immediately before entering the film formation region. 7. The method of manufacturing a semiconductor device according to claim 6, wherein the microwave power has an applied power density of 0.5 w / cm ² or less. 8. The method of manufacturing a semiconductor device according to claim 6, wherein RF bias power or DC bias power is introduced into the film formation space to perform film formation. 9. The method of manufacturing a semiconductor device according to claim 8, wherein the bias power has an applied power density of 1 w / cm ² or less.