JPH0714774A - Method and device for forming functional deposition film continuously - Google Patents

Abstract

PURPOSE:To allow highly efficient continuous formation of a crytalline photovoltaic element having high photovoltaic conversion efficiency with high stability by producing a microwave heating region uniformly over a large area and large volume. CONSTITUTION:The method for forming a functional deposition film continuously comprises a microwave heating step for forming a columnar processing space having a band member 101 as a side wall in the way while shifting the band member formed with a deposition film continuously, and radiating or transmitting microwave energy to the processing space from a microwave applicator means 108 thus heating the side wall of the processing space on which the deposition film is formed. Microwave is radiated or transmitted to the processing space from the microwave applicator means having directivity in the direction normal to the traveling direction of microwave.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for continuously forming a functionally deposited film, in which a uniform microwave heating region is generated over a large area, and a solid phase growth reaction caused by the microwave heating region is generated. The functional deposited film is continuously formed over a large area by improving the quality of the deposited film formed in advance, and the functional deposited film is irradiated with a uniform microwave over a large area. The present invention relates to a continuous forming method and device that can perform More specifically, the present invention relates to a method and an apparatus capable of mass-producing large-area thin-film semiconductor devices such as photovoltaic elements at low cost.

[0002]

2. Description of the Related Art In recent years, attention has been paid worldwide to environmental problems. Environmental pollution by fossil fuels, global warming,
Due to issues such as safety of nuclear power generation, it is desired to supply clean energy that is kind to the earth, and expectations are placed on wind power, tidal power, geothermal power, and solar power generation using natural energy. Above all, the method of power generation using solar cells using sunlight attracts more attention because of the fact that sunlight is scattered all over the earth, there is little uneven distribution of energy sources, and there is no need for complicated large equipment. Has been done. In a solar cell, a semiconductor junction such as a so-called pn junction or a pin junction is formed in a semiconductor layer which is an important constituent element of the solar cell. These semiconductor junctions are formed by sequentially stacking semiconductor layers of different conductivity types, implanting dopants of different conductivity types into a semiconductor layer of one conductivity type by an ion implantation method, or diffusing by thermal diffusion. To be achieved.

Looking at this point in a solar cell using a thin film semiconductor such as amorphous silicon, which has been receiving attention as described above, in its fabrication, phosphine (P
H ₃ ), diborane (B ₂ H ₆ ) or the like is mixed with a raw material gas containing a dopant element such as silane which is a main raw material gas and glow discharge decomposition is performed to obtain a semiconductor film having a desired conductivity type. It is known that a semiconductor junction can be easily formed by sequentially stacking these semiconductor films on a desired substrate. From this, a method for producing an amorphous silicon solar cell is proposed in which an independent film forming chamber for forming each semiconductor layer is provided and each semiconductor layer is formed in the film forming chamber. ing.

Incidentally, in US Pat. No. 4,400,409, there is a roll-to-roll method.
There is disclosed a continuous plasma CVD apparatus adopting the Oll system. According to this apparatus, a plurality of glow discharge regions are provided, and a sufficiently long flexible substrate having a desired width is arranged along a path through which the substrates sequentially pass through the glow discharge regions. It is said that an element having a semiconductor junction can be continuously formed by continuously transporting the substrate in the longitudinal direction while depositing and forming a conductive type semiconductor layer required in the discharge region.
In this specification, a gas gate is used to prevent the dopant gas used when forming each semiconductor layer from diffusing and mixing into other glow discharge regions. Specifically, a means for separating each glow discharge region from each other by a slit-shaped separation passage and forming a flow of a scavenging gas such as Ar or H _{2 in the} separation passage is adopted. . From this, it can be said that the roll-to-roll method is suitable for mass production of semiconductor devices.

However, since the above semiconductor layers are formed by the plasma CVD method using RF (radio frequency), the film deposition rate is improved while maintaining the characteristics of continuously formed films. There is naturally a limit to what can be done. For example, even when a semiconductor layer having a film thickness of at most 5000 Å is formed, a predetermined plasma is used for a considerable length,
It is necessary to constantly occur over a large area and keep the plasma uniform. However, doing so requires considerable skill, and it is difficult to generalize the various plasma control parameters involved. Further, the decomposition efficiency and utilization efficiency of the film-forming raw material gas used are low, which is one of the factors that raise the production cost.

In addition, Japanese Laid-Open Patent Publication No. 61-288074 discloses a deposited film forming apparatus using an improved roll-to-roll system. In this apparatus, a hollow continuous slack portion is formed on a part of a flexible continuous sheet substrate installed in the reaction container, and active species generated in an activation space different from that of the reaction container are formed in the hollow portion. If necessary, another raw material gas is introduced to cause a chemical interaction by thermal energy, and a deposited film is formed on the inner surface of the sheet-like substrate forming the hollow-like slack portion. By depositing on the inner surface of the hollow-like slack portion in this way, the device can be made compact. Furthermore, since the activated species that have been activated in advance are used, the film forming rate can be increased as compared with the conventional deposited film forming apparatus.

However, this apparatus utilizes a deposited film forming reaction by chemical interaction in the presence of heat energy, and in order to further improve the film forming rate, the amount of active species introduced and It is necessary to increase the supply of heat energy. However, there is a limit to the method of uniformly supplying a large amount of thermal energy and the method of generating a large amount of highly reactive active species and introducing them into the reaction space without loss.

On the other hand, what has recently been attracting attention is a plasma process using microwaves. Since the microwave has a short frequency band, the energy density can be increased as compared with the case where the conventional RF is used, and it is suitable for efficiently generating and sustaining plasma.

For example, in US Pat. Nos. 4,517,223 and 4,504,518, thin films are deposited and formed on a small area substrate in a microwave glow discharge plasma under low pressure. A method of causing is disclosed. According to this method, not only a high-quality deposited film can be obtained by preventing the polymerization of active species that causes deterioration of film characteristics due to the process under a low pressure, but also powder of polysilane or the like in plasma can be obtained. It is said that the generation can be suppressed and the deposition rate can be dramatically improved. However, there is no specific disclosure for forming a uniform deposited film over a large area.

On the other hand, in US Pat. No. 4,729,341, a photoconductive semiconductor thin film is deposited on a large-area cylindrical substrate by a high power process using a pair of radiation waveguide applicators. Although a low-pressure microwave plasma CVD method and apparatus for forming the same are disclosed, the large-area substrate is limited to a cylindrical substrate, that is, a drum as an electrophotographic photoreceptor, and a large-area and long-sized substrate. It has not been applied to substrates.

Further, the manufacturing process of the deposited film is a batch type, and the amount of the deposited film formed by one charging is limited, and a large amount of the deposited film is continuously formed on a large-area substrate. There is no disclosure on how to do.

However, since the plasma using microwaves has a short wavelength of microwaves, energy non-uniformity is likely to occur, and various problems remain that must be solved for increasing the area of the substrate. .

For example, as an effective means for homogenizing microwave energy, there is a use of a slow wave circuit. In the slow wave circuit, the microwave coupling of plasma is increased as the distance of the microwave applicator increases in the lateral direction. It has a unique problem that a sharp drop occurs. Therefore, as a measure for solving this problem, for example, US Pat.
As disclosed in Japanese Patent Nos. 814,983 and 4,521,717, a method of making the energy density uniform near the surface of a substrate by changing the distance between the object to be processed and the slow wave circuit. Is being attempted. And in the former, it is described that it is necessary to incline the slow wave circuit to a certain angle with respect to the substrate, but the transfer efficiency of microwave energy to plasma is not satisfactory. In the latter case, it is disclosed that two slow wave circuits are provided non-parallel to each other in a plane parallel to the base.
That is, it is desirable that the planes perpendicular to the center of the microwave applicator intersect with each other in a plane parallel to the substrate to be processed and on a straight line perpendicular to the moving direction of the substrate. To avoid interference between two applicators, it is disclosed that the applicators are arranged laterally offset by half the length of the waveguide crossbar with respect to the direction of movement of the substrate.

By the way, in recent years, studies have been conducted on crystals having excellent stability in place of amorphous silicon as a constituent member of a large area solar cell. In the sunshine plan under the guidance of the Ministry of International Trade and Industry, the amorphous silicon film deposited by the CVD method was doped with PH ₃ and then heated at 550 ° C. to 60 ° C.
Crystallization is attempted by annealing in a heating furnace at a low temperature of 0 ° C. for 10 to 20 hours. As a result, the grain size is 1.
About 5 μm, Hall mobility of electrons is about 200 cm ² / v
・ We are expecting long-wavelength absorption solar cells to obtain s. However, the problem of increase in capital investment due to the increase in size of the annealing furnace and the concern about productivity and cost due to increase in annealing process time are mentioned as technical problems to be solved in the future.

Further, it has been reported that good quality crystallization can be induced by laser annealing in a thin film having a film thickness of 1000Å to 2000Å (S. Usui, Mat).
initial Research Symposium
Procedings, Vol 71 (1986) P
P. 435). However, due to the difficulty in processing a large area due to the small spot diameter of the laser beam and the shallow absorption depth of the laser beam, a relatively thick 1 μm to 20 μm
It is unsuitable for heat treating a thin film of m at a time.

As means for heat-treating the semiconductor thin film, in addition to the above-mentioned heating furnace by infrared irradiation and laser annealing, induction heating mainly suitable for heating a magnetic material and the like can be mentioned. Further, as a heating means by high-frequency irradiation, a heating method by a microwave can be mentioned, particularly for drying wood containing a large amount of water, but it does not have a means for forming a large area and a uniform microwave. Utilizing the high absorption of microwaves due to the high dielectric constant of water contained in the
This has resulted in efficient evaporation of water. In order to heat-treat a semiconductor thin film having a low dielectric constant over a large area by microwave radiation, it is necessary to make a positive effort to make the microwave energy large in area and uniform.

Therefore, at present, there is a demand for early provision of a new microwave introduction process which solves various problems of the microwave radiating means described above.

In addition to the above-mentioned applications for solar cells, thin-film semiconductors are used in thin film transistors (TFTs) for driving the pixels of liquid crystal displays, photoelectric conversion elements and switching elements for contact image sensors, and the like. It is suitable for thin-film semiconductor devices that need to be large in area or long and has been partially put into practical use as a key component for image input / output devices. It is expected that the provision of such a new deposited film forming method will make it more widely popular.

[0019]

DISCLOSURE OF THE INVENTION The present invention overcomes the problems of the conventional method and apparatus for forming a thin film semiconductor device as described above, and forms a functionally deposited film uniformly over a large area at high speed. It is an object of the present invention to provide a novel method and device capable of doing the above. That is, by providing a method and a device for producing a heating region by a microwave uniformly over a large area and a large volume, stability is continuously improved,
An object of the present invention is to provide a method and an apparatus for continuously forming a functional deposited film capable of forming a crystalline photovoltaic element with high efficiency and high photoelectric conversion efficiency.

[0020]

Means and Actions for Solving the Problems The inventors of the present invention have made extensive studies to solve the above-mentioned problems in the conventional thin film semiconductor device forming apparatus and achieve the above-mentioned object of the present invention. A microwave applicator means for radiating or transmitting energy with directivity in one direction perpendicular to the traveling direction of the microwave is included in the microwave transmitting member, and the microwave applicator means is provided on the inner peripheral wall thereof. When the microwave is supplied from the microwave power source to the microwave applicator means, it is rushed into the processing space in a state of not being brought into contact with it, and the inside of the processing chamber is maintained at a predetermined pressure by inserting a vacuum or a processing gas. It has been found that a uniform heating area can be generated in the longitudinal direction of the applicator means in the processing space. .

The present invention has been completed as a result of further studies based on the above-mentioned findings, and a large-area functional deposition film is continuously formed by a microwave heating method whose main point is as described below. Includes methods and apparatus for forming.

The present invention is as described below.
That is, while continuously moving the band-shaped member on which the deposited film is formed, a columnar processing space having a side wall of the band-shaped member is formed in the middle of the band-shaped member, and the microwave energy is perpendicular to the traveling direction of the microwave. The microwave energy is radiated or transferred by the microwave applicator means having directivity in one direction to generate a microwave heating region in the processing space, and the microwave energy is generated. Is a method for continuously forming a functional deposited film, wherein the deposited film on the surface of the strip-shaped member that forms the side wall exposed to the atmosphere is subjected to microwave heat treatment (claim 1). .

In the method of the present invention, the bending start end forming means and the bending end end forming means are formed in the middle of the moving belt-like member by using the bending start end forming means and the bending end end forming means. The side wall of the pretreatment space is formed by curving the band-shaped member while leaving a gap in the longitudinal direction of the band-shaped member therebetween (claim 2).

Microwave energy is radiated or transmitted into the processing space from a gap left in the longitudinal direction of the strip-shaped member between the bending start end forming means and the bending end end forming means. Good (Claim 3),
The microwave applicator means is projected into the processing space from either one of both end surfaces of a columnar processing space formed with the strip-shaped member as a side wall to radiate or transmit microwave energy into the processing space. You may do so (Claim 4).

Microwave energy radiated or transferred from the microwave applicator means is radiated or transferred into the processing space via a microwave permeable member provided between the processing space and the applicator means. (Claim 5).

The microwave applicator means is arranged in close proximity to the width direction of the strip-shaped member so as not to come into contact with the microwave-permeable member, and the microwave is provided in the columnar processing space. The wave energy is radiated or transmitted (claim 6).

From the microwave applicator means, microwave energy is uniformly radiated or transmitted in a length substantially the same as the width direction of the strip-shaped member (claim 7).

The microwave applicator means is separated from the processing space via the microwave permeable member (claim 8).

In the present invention, the microwave energy radiated or transferred into the columnar processing space is prevented from leaking out of the processing space (claim 9).

The apparatus of the present invention is an apparatus for continuously forming a functional deposition film by microwave heating on a continuously moving strip-shaped member, and continuously moving the strip-shaped member in its longitudinal direction. Means, a bending portion forming means for bending the belt-shaped member in the middle thereof, and forming a columnar processing chamber capable of holding the inside of the belt-shaped member as a side wall substantially in vacuum; and the processing chamber. Microwave applicator means adapted to radiate microwave energy for generating a microwave heating region, and transmitting the microwave energy into the processing chamber, and separating the processing chamber from the microwave applicator means. Separation means for discharging, and exhaust means for exhausting the processing chamber,
A means for introducing a processing gas into the processing chamber, wherein the microwave is radiated from the microwave applicator means in a direction perpendicular to the traveling direction of the microwave with directivity. The continuous deposition apparatus for functionally deposited film is characterized in that (claim 10).

In the apparatus of the present invention, the bending portion forming means is composed of at least one set of a bending start end forming means and a bending end end forming means, and the bending start end forming means and the bending end end forming means. And means for disposing a gap in the longitudinal direction of the strip-shaped member (claim 11). In addition,
The curved portion forming means includes at least a pair of supporting / transporting rollers and a supporting / transporting ring, and the pair of supporting / transporting rollers are arranged in parallel in the longitudinal direction of the strip-shaped member with a gap left therebetween. (Claim 12).

In the apparatus of the present invention, the separating means is
It may be arranged in parallel with a gap left between the curved start end forming means and the curved end end forming means and arranged outside the processing chamber (claim 13). The separating means may project into the processing chamber from either one of both end surfaces of the columnar processing chamber having the belt-shaped member as a side wall substantially parallel to the width direction of the belt-shaped member (claim 1).
4).

The separating means may be substantially cylindrical (claim 15) or semi-cylindrical (claim 1).
6).

On the other hand, the microwave applicator means is arranged so as to be separated from the peripheral wall of the separating means and to be contained inside the separating means (claim 17).

In the apparatus of the present invention, the separating means is provided with a cooling means (claim 18), and the cooling means is an air flow flowing along the inner peripheral surface of the separating means ( Claim 19). Further, the cooling means may be arranged inside the separating means, and may be concentrically arranged with the separating means so as to form a conduit structure capable of flowing a cooling medium between the cooling means and the separating means (claim). Item 20).

In the apparatus of the present invention, the microwave applicator means is a microwave transmission waveguide, and the microwave energy is substantially evenly distributed in the longitudinal direction of the waveguide in the traveling direction of the microwave. A substantially rectangular hole is formed for directing and radiating in one vertical direction (claim 21). The rectangular holes are provided on at least one side of the waveguide,
A microwave is radiated from this hole (claim 22). When a plurality of the rectangular holes are formed, these holes are arranged at intervals in the longitudinal direction of the waveguide (claim 23).

The square hole may be a single rectangle having a large aspect ratio (claim 24), and the dimension thereof is larger than one wavelength of the microwave and the length of the waveguide is long. The width and the length are substantially equal to each other in the direction (claim 25).

Then, the microwave energy is uniformly radiated from the rectangular hole in the lengthwise direction of the waveguide with a length of at least one wavelength of the radiated microwave or more (claim) 26).

Further, shutter means is provided in the rectangular hole so as to surely radiate microwave energy from the rectangular hole at a substantially uniform density over the entire length of the microwave applicator means. 27).

The apparatus of the present invention is an apparatus for continuously forming a large-area functional deposition film by microwave heating on a continuously moving strip-shaped member, and the strip-shaped member is continuously formed in the longitudinal direction thereof. And means for moving the strip-shaped member while forming a curved portion for forming a columnar processing chamber capable of being curved in the middle of the strip-shaped member and using the strip-shaped member as a side wall to substantially maintain the inside in a vacuum state. And a microwave applicator means for transmitting evanescent microwave energy with directivity in one direction perpendicular to the traveling direction of the microwave in order to generate a microwave heating region in the processing chamber. And an evanescent microwave energy transmitted from the microwave applicator means with directivity in one direction perpendicular to the traveling direction of the microwave. For separating the microwave applicator means from the processing chamber and for separating the microwave applicator means from the processing chamber, an exhaust means for exhausting the processing chamber, and a processing gas for introducing the processing gas into the processing chamber. A gas supply means is provided, and a deposited film is formed on the surface of the continuously moving strip-shaped member that is exposed to the microwave energy, or the deposited film is heat-treated. It is a continuous deposition apparatus for functionally deposited film according to claim 29.

In the apparatus of the present invention, the microwave applicator means is an elongated slow-wave circuit waveguide, and the slow-wave circuit waveguide is substantially uniformly distributed in the processing space in the longitudinal direction of the evanescent microwave energy. Has a ladder-like structure for transmitting the electric power (claim 40). Also,
The length of the ladder-shaped structure is substantially equal to the length of the strip-shaped member in the width direction (claim 41). The ladder structure is a structure for uniformly transmitting the evanescent microwave energy for at least one wavelength of the microwave transmitted in the longitudinal direction (claim 4).
2).

The experiments conducted by the present inventors to complete the present invention will be described in detail below.

(Experiment) Using the apparatus of the present invention, the generation conditions of the microwave heating region and the relative positional relationship between the strip-shaped member and the separating means for uniformly forming the functional deposited film on the strip-shaped member, etc. In order to study

(Experimental Examples 1 to 9) In the apparatus having the structure shown in FIG. 5, the transfer rings 104 and 105 were used as exhaust holes and connected to an exhaust pump (not shown), and various waveguides shown in Table 1 were used. Experiments and evaluations were performed on the ultimate temperature and temperature unevenness under the microwave heating conditions shown in Table 2 using a microwave applicator having a tube and a hole processing size. The evaluation results are shown in Table 3. L ₁ , L ₂ , and L ₃ in Table 2 are the distances defined in FIG. 5, respectively. In addition, in this heating experiment, when the strip-shaped member 101 is stationary,
It was carried out with the case of carrying at a carrying speed of / min, but there was no particular difference in the reached temperature and the temperature unevenness between the two.

(Experimental Examples 10 to 18) The apparatus in which the strip-shaped member and the microwave applicator were arranged as shown in FIG. 6 was used, and the microwave applicators having various waveguides and hole processing dimensions shown in Table 1 were used. Further, under the microwave heating conditions shown in Table 4, the reached temperature and the temperature unevenness were tested and evaluated. L _{4 in} Table 4 is the distance defined in FIG.

The evaluation results are shown in Table 5. In this heating experiment, the case where the strip-shaped member 101 is stationary and 1.
It was carried out with the case of carrying at a carrying speed of 2 m / min, but there was no particular difference in the reached temperature and the temperature unevenness between them. (Experimental Examples 19 to 28) In the apparatus having the configuration shown in FIG. 5, the transfer rings 104 and 105 were used as exhaust holes, which were connected to an exhaust pump (not shown), and various waveguides and holes shown in Table 6 were used. Experiments and evaluations were performed on the ultimate temperature and the temperature unevenness under the microwave heating conditions shown in Table 2 using the shutter processing size. The evaluation results are shown in Table 7. In this heating experiment, the belt-shaped member 101 was stationary and the belt was conveyed at a conveying speed of 1.2 m / min, but there was no particular difference in the reached temperature and the temperature unevenness. It was

(Experimental Examples 29 to 38) In the apparatus having the configuration shown in FIG. 6, various waveguides and holes shown in Table 6 and microwave applicators having shutter processing dimensions were used, and the microwaves shown in Table 4 were used. Experiments and evaluations were made on the ultimate temperature and temperature unevenness under the wave heating conditions. The evaluation results are shown in Table 8. In this heating experiment, the strip-shaped member was stationary and was transported at a transport speed of 1.2 m / min, but there was no particular difference in the reached temperature and temperature unevenness between the two. It was

(Comparative Experimental Examples 1 to 4) Experimental Examples 2, 7 and 21
25 and 25, among the microwave heating conditions shown in Table 2, the other conditions were not changed and only the pressure was changed variously as shown in Table 9 so that the occurrence of discharge at that time and the uniformity of heating in the heating region, etc. It was evaluated from the viewpoint of. Regarding evaluation, when the most stable state is obtained, it is ⊚, when it is somewhat lacking in stability and uniformity but there is no problem in practical use, it is ○, when it is lacking in stability and uniformity, there is a problem in practical use, it is banded. When the member was not heated or when it was not practical due to abnormal discharge or the like, it was ranked as x and the evaluation results are shown in Table 9.

As can be seen from Table 9, stable and uniform microwave heating is realized in a wide pressure range.

It should be noted that these results show that 1.2 m / min and 1.5 m / m are obtained even when the strip member is stationary.
No particular change was observed even when the sheet was conveyed at an in-conveyance speed.

(Comparative Experimental Examples 5 to 8) Experimental Examples 2, 7 and 21
And 25, the microwave heating conditions shown in Table 2 are not changed and the microwave power alone is variously changed as shown in Table 10 so that the heating state at that time is stable, uniform, etc. From the viewpoint of, the case where the most stable state was obtained is ◎, the case where stability and uniformity are somewhat lacking but practically no problem ○, the stability and uniformity are lacking and practically problematic Δ, when the belt-shaped member was not heated, or when there was abnormal discharge or the like and was not practical, it was ranked as ×, and the evaluation results are shown in Table 10.

As can be seen from Table 10, stable and uniform microwave heating is realized in a relatively wide microwave power range. It should be noted that these results show that 1.2 m / min even when the strip-shaped member is stationary.
Also, no particular change was observed during the conveyance at a conveyance speed of 1.5 m / min.

(Comparative Experimental Examples 9 to 12) Experimental Examples 2, 7 and 2
1 and 25, among the microwave heating conditions shown in Table 2, other conditions were not changed, and as shown in Table 11, L ₁ , L
₂ is variously changed, and the heating state of the belt-shaped member at that time is evaluated from the viewpoint of stability, uniformity, etc., ◎ when the most stable state is obtained, and a little lacking in stability and uniformity. When there is no problem in practical use, ○; when stability and uniformity are lacking, when there is a problem in practical use, Δ, no discharge at all,
When it was not practical due to abnormal discharge or the like, it was ranked as x and the evaluation results are shown in Table 11.

As can be seen from these, when at least one of L ₁ and L ₂ is larger than ¼ wavelength of the microwave wavelength, flickering of microwave discharge and microwave leakage increase. However, it can be seen that stable and uniform microwave heating is realized when the wavelengths are all ¼ wavelength or less. It should be noted that these results show that 1.2 m / min even when the strip-shaped member is stationary.
Also, no particular change was observed during the conveyance at a conveyance speed of 1.5 m / min.

(Comparative Experimental Examples 13 to 16) Experimental Examples 2 and 7,
21 and 25, among the microwave heating conditions shown in Table 2, other conditions were not changed and only L ₃ was changed variously as shown in Table 12 to change the heating state at that time to stability, uniformity, etc. From the viewpoint of, the case where the most stable state was obtained is ◎, the case where stability and uniformity are somewhat lacking but practically no problem ○, the stability and uniformity are lacking and practically problematic Δ: When no heating was performed, or when abnormal discharge or the like was not practical, it was ranked as ×, and Table 12
The evaluation results are shown in.

As can be seen from the above, heating becomes unstable when L ₃ is less than 1/2 wavelength of the microwave wavelength,
It can be seen that stable and uniform microwave heating is realized at ½ wavelength or more.

However, when L ₁ and L ₂ were larger than ¼ wavelength and L ₃ was too large, microwave leakage was large and heating was unstable.

It should be noted that these results show that 1.2 m / min and 1.5 m / m even when the strip-shaped member is stationary.
No particular change was observed even when the sheet was conveyed at an in-conveyance speed.

(Comparative Experimental Examples 17 to 20) Experimental Examples 2 and 7,
21 and 25, among the microwave heating conditions shown in Table 2, other conditions were not changed, and only the inner diameter of the curved shape was variously changed as shown in Table 13 to stabilize the heating state at that time, Evaluated from the viewpoint of uniformity, etc., ◎ when the most stable state was obtained, somewhat stable, ○ when there is no practical problem but lacks practicality, stability, lack of uniformity and practical problems The evaluation results are shown in Table 13 with Δ in some cases, and in x with no heating or in cases where abnormal discharge or the like is not practical.

As can be seen from these, it is understood that uniform microwave heating can be realized stably up to a relatively large inner diameter. Note that these results show that 1.2 m / min and 1.5 m / min even when the strip-shaped member is stationary.
No particular change was observed even when transported at a transport speed of min.

(Comparative Experimental Examples 21 to 24) Experimental Examples 11 and 1
8, 30, and 37, among the microwave heating conditions shown in Table 4, only the pressure was changed variously as shown in Table 14 without changing other conditions, and the heating state at that time was stable and uniform. When the most stable state is obtained, it is evaluated as ◎, and when stability and uniformity are somewhat lacking but there is no practical problem, ○, when stability and uniformity are lacking and practical problem exists. Is rated as △, and if there is no heating or there is abnormal discharge, etc., it is ranked as ×,
The evaluation results are shown in Table 14.

As can be seen from these, it is understood that uniform and uniform microwave heating is realized in a wide pressure range. It should be noted that these results show that 1.2 m / min and 1.5 m / m even when the strip-shaped member is stationary.
No particular change was observed even when the sheet was conveyed at an in-conveyance speed.

(Comparative Experimental Examples 25 to 28) Experimental Examples 11 and 1
8, 30, and 37, among the microwave heating conditions shown in Table 4, other conditions were not changed and only the microwave power was variously changed as shown in Table 15 to stabilize the heating state at that time, Evaluated from the viewpoint of uniformity, etc., ◎ when the most stable state was obtained, somewhat stable, ○ when there is no practical problem but lacks practicality, stability, lack of uniformity and practical problems △ in some cases, no heating at all,
When it was not practical due to abnormal discharge or the like, it was ranked as x and the evaluation results are shown in Table 15.

As can be seen from the above, stable and uniform microwave heating can be realized in a relatively wide microwave power range. It should be noted that these results show that 1.2 m / min even when the strip-shaped member is stationary.
Also, no particular change was observed during the conveyance at a conveyance speed of 1.5 m / min.

(Comparative Experimental Examples 29 to 32) Experimental Examples 11 and 1
8, 30, and 37, among the microwave heating conditions shown in Table 4, other conditions were not changed, and as shown in Table 16, L
₄ is changed variously, and the heating state at that time is evaluated from the viewpoint of stability, uniformity, etc., when the most stable state is obtained, it is ◎, although it is somewhat lacking in stability and uniformity, it is a practical problem. When there is no, it is ranked as ○, when stability and uniformity are lacking and there is a problem in practical use, △, when there is no heating or there is abnormal discharge etc., it is ranked as ×,
The evaluation results are shown in Table 16.

As can be seen from the above, it is understood that L ₄ is stable and uniform microwave heating is realized in the range of about ½ wavelength or less of the microwave wavelength.

It should be noted that these results show that 1.2 m / min and 1.5 m / m even when the strip-shaped member is stationary.
No particular change was observed even when the sheet was conveyed at an in-conveyance speed.

(Comparative Experimental Examples 33 to 36) Experimental Examples 11 and 1
In 8, 30, and 37, among the microwave heating conditions shown in Table 4, other conditions were not changed, and only the inner diameter of the curved shape was variously changed as shown in Table 17 to stabilize the heating state at that time. When the most stable state is obtained, it is evaluated as ◎, and when stability and uniformity are somewhat lacking but there is no problem in practical use, ○, stability and uniformity are lacking and practical When there is a problem, it is ranked as Δ, and when it is not practical because it is not heated at all or due to abnormal discharge or the like, it is ranked as ×, and Table 17 shows the evaluation results.

As can be seen from these, it can be seen that uniform microwave heating is realized in a range where the inner diameter is up to about 5 times the diameter of the separating means.
It should be noted that these results did not show any particular change even when the belt-shaped member was stationary or when the belt-shaped member was conveyed at a conveying speed of 1.2 m / min and 1.5 m / min. (Comparative Experimental Examples 37 to 40) In Experimental Examples 1 and 37,
SUS bunching board for confining microwave region
A similar evaluation was performed on the heating stability and the like except that the surface of the thin plate made of 316L was sprayed with alumina, and the other heating conditions were not changed, and no particular difference was observed. .

(Summary of Experimental Results) In the method and apparatus of the present invention, the stability and uniformity of microwave heating are determined by, for example, the type and shape of the microwave applicator, the pressure in the processing chamber during heating, the microwave power, Since various parameters such as the degree of confinement of microwave energy, the volume and shape of the processing space are intricately entangled and maintained, it is difficult to find the optimum condition with only a single parameter. From this, the following trends and condition ranges were found.

The pressure is not limited, but preferably from vacuum to atmospheric pressure, more preferably from vacuum to 500 mTo.
It was found to be in the range of rr. With respect to microwave power, it has been found that it is preferably between 100W and 5500W, more preferably between 200W and 5000W. Furthermore,
Regarding the inner diameter of the curved shape, preferably about 5 times the length of the outer peripheral wall of the separating means exposed to the microwave heating region,
It has been found that, more preferably, by setting the condition in the range of about 4 times, the microwave heating is maintained substantially stable and uniform.

Further, it was found that when the amount of leakage of microwave energy from the microwave heating region becomes large, the stability of the temperature distribution in the heating region is lacking, and the gap formed by either the curved end of the belt-shaped member or the separating means is small. It has been found that it is desirable to set the wavelength to preferably ½ wavelength or less of the microwave, more preferably ¼ wavelength or less.

Hereinafter, the method of the present invention will be described in more detail based on the facts found by the above experiment.

In the method of the present invention, in the middle of the moving strip-shaped member, the side wall of the columnar processing space formed by bending the strip-shaped member using the bending start end forming means and the bending end end forming means is formed. Most of it is formed by the moving strip-shaped member, but a gap is left in the longitudinal direction of the strip-shaped member between the bending start end forming means and the bending end end forming means.

In the method of the present invention, in order to uniformly generate the microwave heating region in the columnar processing space, the microwave capable of radiating or transmitting the microwave energy uniformly in the width direction of the strip-shaped member. The wave applicator means is projected from either one of both end surfaces in the columnar processing space substantially parallel to the width direction of the belt-shaped member, or the bending start end forming means and the bending end end forming means. It is desirable to dispose them in close proximity to each other and substantially parallel to the gap left in the longitudinal direction. Microwave energy is radiated or transmitted from the microwave applicator means in one direction perpendicular to the traveling direction of microwaves, and in any case, in the columnar processing space. The microwave energy radiated or transmitted to the side wall is repeatedly reflected, scattered, and absorbed by the band-shaped member constituting the side wall to fill the processing space uniformly, thereby forming a uniform microwave heating region. However, in order to stably and reproducibly generate the microwave heating, the microwave energy is efficiently radiated or transmitted into the processing space, and the microwave energy does not leak from the processing space. Need to be considered.

For example, in the former case, the applicator means is left in the longitudinal direction of the belt-shaped member between the one end surface of the applicator means which is not projected and the curve start end forming means and the curve end end forming means of the band-shaped member. It is necessary to prevent microwave energy from leaking through the gaps formed, and the end face and the gaps are sealed with a conductive member, and the hole diameter preferably has a microwave wavelength of 1 or less.
/ 2 wavelength or less, more preferably 1/4 wavelength or less,
Covering with a bunching board is desirable. When the microwave applicator means is thrust into the processing space, it is desirable that the microwave applicator means be disposed at positions substantially equidistant from the side wall, but in the case where the curved shape of the side wall is asymmetrical, etc. There is no particular limitation on the position where the is arranged.

In the latter case, the direction in which the microwave energy is radiated or transmitted from the microwave applicator means with directivity lies between the bending start end forming means and the bending end end forming means of the belt-shaped member. It is necessary to face the gap left behind. Then, in order to efficiently radiate or transmit the microwave energy into the columnar processing space, the gap left between the bending start end forming means and the bending end end forming means in the longitudinal direction of the strip-shaped member. The minimum size of the opening width is preferably ¼ wavelength or more, more preferably ½ wavelength or more of the microwave wavelength.

Further, if the gap and the microwave applicator means are arranged at an excessively large distance, the amount of microwave energy radiated or transmitted into the processing space is reduced and the microwave energy is radiated or transmitted. Microwave energy may be insufficiently confined.

However, the radiation or transmission direction of the microwave energy and the opening width, and the distance between the gap and the microwave applicator means are for efficiently supplying the microwave energy into the columnar processing space. However, it is preferable to appropriately adjust and arrange so as to maximize the efficiency because they have an important meaning and are related to each other.

It should be noted that the columnar processing space is sealed with a conductive member so that microwaves do not leak from both end faces, and the hole diameter is preferably 1/2 of the microwave wavelength used.
It is desirable to cover with a wire mesh, bunching board, or the like having a wavelength of less than or equal to the wavelength, and more preferably a wavelength of less than or equal to 1/4.

In the method of the present invention, the shape of the both end surfaces of the columnar processing space formed by bending the moving belt-like member using the bending start end forming means and the bending end end forming means is as described above. It is preferable that the microwave energy radiated or transmitted into the processing space is substantially uniformly filled in the processing space, and the microwave energy has a shape similar to a circular shape, an elliptical shape, a rectangular shape, or a polygonal shape. A symmetrical and relatively smooth curved shape is desirable. Of course, in the gap portion left in the longitudinal direction of the strip-shaped member between the bending start end forming means and the bending end end forming means, the end face shape may be discontinuous.

In the method of the present invention, the bending start end forming means and the bending end end forming means are arranged at least at two positions in the longitudinal direction of the moving strip-shaped member to bend the strip-shaped member and to form the curved strip-shaped member. A columnar processing space having a member as a side wall is formed. It is preferable that the curved shape always keeps a constant shape in order to maintain the stability and uniformity of the microwave heating generated therein, and the strip-shaped member has the curved start end forming means and the curved end end. It is desirable that the forming means should support the wrinkles, the slack, and the lateral shift so as not to occur. Then, in addition to the bending start end forming means and the bending end end forming means, a supporting means for holding a curved shape may be provided. Specifically, a support means for continuously holding a desired curved shape may be provided inside or outside the curved strip-shaped member. When the support means is provided inside the curved strip-shaped member, care should be taken to minimize the portion that comes into contact with the surface of the deposited film to be subjected to the microwave heat treatment. For example, it is preferable to provide the supporting means at both ends of the belt-shaped member.

As the band-shaped member, one having flexibility capable of continuously forming the curved shape is used, and it is desirable to form a smooth shape at the bending start end, the bending end end and the middle curved portion.

In the method of the present invention, directivity is imparted to one direction perpendicular to the traveling direction of the microwaves at least substantially uniformly with respect to the widthwise length of the strip-shaped member used from the microwave applicator means. In order to radiate or transfer microwave energy, either a leaky wave type or a slow wave circuit type is suitably adopted. In either method, consideration is given so that the amount of microwave radiation or transmission is uniform with respect to the traveling direction of microwaves. Further, the microwave applicator means separates the microwave heating region generated in the processing space from the microwave heating member. By doing so, the microwave energy radiated or transmitted from the microwave applicator means is kept uniform in its longitudinal direction regardless of changes in the external environment.

Hereinafter, the microwave plasma CVD of the present invention will be described.
The configuration and characteristic points of the apparatus will be described in more detail step by step.

According to the apparatus of the present invention, by confining the microwave heating region with the moving belt-shaped member,
The microwave heating efficiency can be dramatically increased.

Further, by using the microwave applicator means of the present invention, the uniformity of the microwave heating region occurring in the longitudinal direction of the microwave means is enhanced, so that it is formed in the width direction of the strip-shaped member. In addition to the excellent uniformity of the characteristics of the deposited film, the longitudinal length of the strip-shaped substrate can be increased by continuously transporting the strip-shaped member in a direction substantially perpendicular to the longitudinal direction of the microwave applicator means. The deposited film characteristics are uniform and excellent in the direction.

Further, according to the apparatus of the present invention, since heating can be continuously and stably maintained with good uniformity, a functional deposited film having stable characteristics can be continuously formed on a long strip-shaped member. Further, by using the microwave applicator means of the present invention and varying the hole diameter and the opening ratio in various ways, a microwave heating region having high uniformity can be generated in the longitudinal direction.

In the apparatus of the present invention, when the strip-shaped member functions as a structural material, the outside of the processing chamber may be atmospheric air, but the functional deposition formed by the inflow of atmospheric air into the processing chamber. When the characteristics of the film are affected, an appropriate air inflow prevention means may be provided. Specifically, a mechanical sealing structure using an O-ring, a gasket, a helicopter, a magnetic fluid, or the like, or a diluted gas atmosphere that has little influence on the characteristics of the deposited film formed or is effective, Alternatively, it is desirable to dispose an isolation container for forming an appropriate vacuum atmosphere in the periphery. In the case of the mechanical sealing structure, special consideration needs to be given so that the band-shaped member can continuously move while maintaining the sealed state. When the apparatus of the present invention and another plurality of deposited film forming means are connected and the deposited films are continuously laminated and microwave-heated on the strip-shaped member, each apparatus is connected using a gas gate means or the like. Is desirable.

In the apparatus of the present invention, the pressure outside the processing chamber may be in a depressurized state or in a pressurized state, but if the band-shaped member is largely deformed due to the pressure difference between the processing chamber and the processing chamber, an appropriate assistance is provided. The structural material may be arranged in the processing chamber. As the auxiliary structural material, it is desirable that the auxiliary structural material has a shape substantially the same as that of the side wall of the processing chamber and is formed of a wire material, a thin plate or the like made of metal, ceramics, reinforced resin or the like having appropriate strength.

The material of the belt-shaped member that is preferably used in the method and apparatus of the present invention is deformed at the temperature required for forming a functional deposited film by microwave heating,
It is preferable that it has little distortion and has a desired strength. Specifically, it is a thin plate of metal such as stainless steel, aluminum and its alloys, iron and its alloys, copper and its alloys, and their composites, and those. Metallic thin film of different materials and / or SiO ₂ , Si ₃ N ₄ , Al _{2 on the surface}
Examples thereof include those obtained by subjecting an insulating thin film such as O ₃ or AlN to a surface coating treatment by a sputtering method, a vapor deposition method, a plating method or the like. In addition, the thickness of the belt-shaped member should be as thin as possible in consideration of cost, storage space, etc., as long as it is within a range in which the curved shape formed during the transportation by the transportation means is maintained. Is desirable. In particular,
Preferably 0.01 mm to 5 mm, more preferably
0.02 mm to 2 mm, optimally 0.05 mm to 1
The thickness is preferably mm, but it is easier to obtain a desired strength by using a thin plate made of a metal or the like even if the thickness is reduced.
The width of the strip-shaped member is not particularly limited as long as the microwave applicator means of the present invention is used so that the uniformity of the microwave heating region with respect to the longitudinal direction is maintained. Preferably, specifically preferably 5 cm to 200 cm,
More preferably, it is desired to be 10 cm to 150 cm.

Further, the length of the belt-like member is not particularly limited, and may be such a length that it can be wound into a roll, and a longer one can be made longer by welding or the like. It may be one that has been made.

In the apparatus of the present invention, as a means for supporting and conveying the belt-shaped member while continuously curving the belt-shaped member, the curved shape of the belt-shaped member can be obtained without causing slack, wrinkles, lateral deviation, etc. during the conveyance. It is necessary to keep it constant. For example, at least one pair of supporting / conveying rings having a desired curved shape are provided, preferably both ends of the belt-shaped member are supported by the supporting / conveying rings, and the supporting members are curved along the shape thereof, The supporting / conveying roller as at least a pair of the bending start end forming means and the bending end end forming means provided in the longitudinal direction of the member narrows it down to bend it into a substantially columnar shape, and further, the supporting / conveying ring and the supporting / conveying. A driving force is applied to at least one of the application rollers to convey the belt-shaped member in its longitudinal direction while maintaining the curved shape. The supporting / transporting ring may be supported / transported by simple sliding friction, or the belt-shaped member may be processed with a sprocket hole or the like, or the supporting / transporting ring in the previous term may be used. Also in regard to this, a so-called gear-shaped one having saw-tooth-shaped projections provided around it may be used.

Regarding the shape of the support / transport ring in the previous term, it is preferable that it is circular when forming a curved shape, but even if it is elliptical, rectangular or polygonal, it is continuously constant. There is no particular problem as long as it has a mechanism for maintaining its shape. Keeping the transport speed constant is an important point in transporting without causing slack, wrinkles, lateral deviation, etc. in the curved shape. Therefore, it is desirable that the support / conveyance mechanism be provided with a mechanism for detecting the conveyance speed of the belt-shaped member and a mechanism for adjusting the conveyance speed in which a fieldback is applied. Also,
These mechanisms bring about a great effect also on the film thickness control in manufacturing a semiconductor device.

Further, the supporting / transporting ring is arranged in the microwave plasma and the heating region, though the ring is exposed to the plasma for the purpose. Therefore,
It is desirable that the material be resistant to microwave plasma and heating, that is, excellent in heat resistance, corrosion resistance and the like.

In the present invention, the film previously formed on the belt-shaped member may be any of a semiconductor material, a metal material and an insulating material, and may be an inorganic material or an organic material. Further, it does not need to be composed of only a single component, and may be a mixture of these plural components. Regarding the structure, amorphous, microcrystal, polycrystal,
It is applicable to any of single crystals. From the viewpoint of manufacturing method, RF plasma CVD method, sputtering method and reactive sputtering method, photo CVD method, thermal CVD method
Method, a MOCVD method, an MBE method, an HR-CVD method, a microwave CVD method, and the like, a deposited film forming method by a gas phase reaction also deposits a solid in a solution state. A liquid phase growth method, a solid phase growth method such as a heat ray, an electron beam, an ion beam, radiation, or a laser beam, or a combination thereof may be used. Further, it may be formed by a deposition method by electrolytic polymerization by an electrochemical reaction.

Further, prior to the microwave heat treatment, an additive may be introduced into the previously formed deposited film in an appropriate ratio for the purpose of controlling crystal grains by the microwave heat treatment, and the concentration distribution thereof may be appropriately adjusted. It is also possible to adjust and control the particle size.

The microwave heating method of the present invention is effective as a means for activating doping atoms for controlling valence electrons of semiconductors.

The processing gas in the present invention is introduced for the purpose of promoting the structuring of the deposited film and the passivation of defects when the deposited film previously formed on the strip portion is radiatively heated with microwave energy. Those that are easily diffused into the deposited film are preferable, and specific examples thereof include inert gases such as He, Ar, Xe, Kr, and Rn, and H ₂ , F ₂ , Cl ₂ , O _2, etc. can be appropriately selected.

Further, the processing gas in the present invention is introduced into the processing space by the gas introduction means, may absorb a part of the microwave energy and be decomposed and excited, or may be a gas temperature which is not decomposed and has risen. Also, the strip-shaped member forming the processing space may be heated by microwaves to absorb the thermal energy and decomposed and excited, and the gas temperature may rise.

In the present invention, it is possible to control the depth of annealing in the film thickness direction of the thin film deposited on the strip-shaped member by changing the intensity of microwave energy and the transport speed of the strip-shaped band.

[0102]

EXAMPLES The present invention will be described in detail below with reference to specific examples of the present invention with reference to the drawings, but the present invention is not limited thereto.

Example 1 FIG. 1 shows a schematic diagram of the microwave heating apparatus of the present invention.

Reference numeral 101 denotes a belt-shaped member, which is used for supporting / conveying rollers 102, 103 and supporting / conveying ring 104,
It is conveyed in the direction of the arrow in the figure while maintaining a cylindrically curved shape by 105. 106 and 107 are band-shaped members 1
01 is a temperature control mechanism for heating or cooling. However, in this embodiment, the temperature control mechanism of the isolation container during microwave heating is not used.

Reference numeral 108 designates a microwave applicator, which is separated by the separating means 109.
Separated from 3. Reference numeral 110 is a microwave leakage preventing metal cylinder, and 111 is a microwave leakage preventing metal mesh. 1
Reference numeral 12 is a gas introduction pipe, into which a processing gas is independently introduced via a mass flow controller (not shown). Reference numerals 114 and 115 denote microwave leakage preventing wire nets, and the microwave heating region 113 is enclosed in a processing chamber having a curved portion of the belt-shaped member 101 as a side wall. The inside of the microwave heating region 113 is set by an exhaust device (not shown).
A gap between the separating means 109 and the conveying rollers 102 and 103, and / or a microwave leakage preventing wire net 114 or 11
Exhausted via 5.

FIG. 2 shows a concrete schematic view of the microwave applicator means 201 used as the microwave applicator 108. The circular waveguide 202 has a distal end 20.
3 has a plurality of (for example, five here) on one side thereof.
Holes 204 to 208 arranged at intervals are opened, and microwaves propagate in the direction of the arrow in the figure. Here, as an example, the hole 204 is shown to be covered with a lid made of the same material as the waveguide 202. By opening or closing some holes in this manner, the waveguide 202
The microwave energy radiated in the longitudinal direction is uniformed.

(Embodiment 2) An example of an apparatus in which the apparatus shown in Embodiment 1 of the present invention is arranged in an isolation container can be given. The schematic diagram is shown in FIG. Reference numeral 400 denotes an isolation container, the inside of which can be evacuated from the exhaust hole 419 by using an exhaust pump (not shown). 401,4
Reference numeral 02 denotes a fixing flange, which fixes the separating means 109 protruding through both walls of the isolation container 400. The fixing flanges 401 and 402 are preferably made of a suitable corrosion-resistant material such as stainless steel like the isolation container 400, and preferably have a detachable structure from the isolation container 400. The fixing flange 401 is attached to the connecting flange 404. Connection flange 404
Is attached directly to the side wall of the isolation container 400, where an opening 405 having substantially the same extent as the outer peripheral surface of the cylindrical separating means 109 is opened, and the separating means 109 is opened.
Can be inserted. Further, at least two O-rings 406 and 407 are attached to the fixing flange 401 to separate the vacuum atmosphere in the isolation container 400 from the outside air. Here, a cooling groove 408 is provided between the O-rings 406 and 407, and a coolant such as water can be circulated therethrough to uniformly cool the O-rings 406 and 407. As a material for the O-ring, for example, a material such as Viton which fulfills its function at a temperature of 100 ° C. or higher is preferably used. Here, the position where the O-ring is provided is preferably a position sufficiently distant from the microwave heating region, and this can prevent the O-ring from being damaged at a high temperature.

Reference numeral 110 designates a metal cylinder, the opening end portion 40 of which.
A wire mesh 111 is attached to the wire 9, and an earth finger 410 keeps electrical contact with the fixing flange 401. These structures prevent microwave energy from leaking to the outside. The wire net 111 also has a role of allowing the cooling air of the separating means 109 to flow out. A dummy load for absorbing microwaves may be connected to the opening end 409. This is particularly useful where microwave energy leakage occurs at high power levels.

The isolation container 400 is provided with a fixing flange 402 for fixing the same as the separating means on the side wall to which the fixing flange 401 described above is attached. 411 is a connecting flange, 412 is an opening, 41
3, 414 is an O-ring, 415 is a cooling groove, 416 is a metal cylinder, and 417 is a ground finger. Reference numeral 418 denotes a connecting plate, which connects the microwave applicator means 108, the microwave power source, and the rectangular or circular conversion waveguide 403, and preferably has a structure in which microwave energy does not leak here. For example, a choke flange or the like can be used. Further, the rectangular-to-circular conversion waveguide 403 includes a rectangular waveguide 421 and a connecting flange 420.
Connected through.

FIG. 5 shows the belt-shaped member 10 of this embodiment.
1 schematically shows a side sectional view of the transport mechanism of No. 1. The arrangement here has at least two proximity points on the outer peripheral surface of the separating means 109, and is curved in a substantially columnar shape with respect to the side facing the hole 208 formed in the circular waveguide 202 to form a columnar shape. The case where the processing space 504 is formed is shown. The supporting / conveying rollers 102 and 103 and the supporting / conveying ring 104 (105) are used to hold the cylindrical shape.
Here, the width of the support / transport ring 104 (105) is
It is possible to effectively heat the film previously deposited on the substrate by using a strip member having a ratio as small as possible with respect to the width of the strip member to be used.

Further, the support / transport rings 104, 105
Wire meshes or thin plates 501 and 501 ′ for confining the microwave heating region are preferably attached (both sides are not shown) to both side surfaces of the, and the mesh diameter is preferably the wavelength of the microwave used. It is preferably ½ wavelength or less, more preferably ¼ wavelength or less, and when exhausting from this surface, it is desirable that the permeation of the processing gas can be secured.

Further, the intervals L ₁ and L ₂ at the close points between the outer peripheral surface of the separating means 109 and the strip-shaped member 101 prevent the microwave energy from leaking from here, and confine the microwave heating region within the curved shape. Therefore, it is preferable to set the wavelength shorter than at least half the wavelength of the emitted microwave. However, in the interval L ₃ between the bending start end and the bending end end of the band-shaped member 101, microwave energy radiated from the microwave applicator 201 is efficiently radiated into the curved shape region formed by the band-shaped member 101. One of the wavelengths of the emitted microwave for
It is desirable to set the wavelength longer than / 4 wavelength.

The microwave energy radiated from the hole 208 is directionally radiated in a direction substantially perpendicular to the side facing the hole 208, so that the radiating direction is at least approximately the distance L _3. It is preferably oriented vertically.

(Embodiment 3) Next, a case where the microwave applicator means 301 shown in FIG. 3 (a) is used in the apparatus shown in FIG. 1 can be mentioned.

An opening end 303 and one elongated rectangular hole 304 are formed in the circular waveguide 302, and a microwave propagates in the direction of the arrow in the figure. The hole 304 is larger than one wavelength of the microwave used, and the circular waveguide 30
It is opened almost all over one side of 2. The open end 303 is provided in order to avoid standing waves, but even if it is sealed, there is no particular problem. With this structure, microwave energy can be radiated from the entire surface of the hole 304, but the microwave energy concentration is maximized especially at the end of the hole close to the microwave power source. Therefore, the circular waveguide 30 is formed by the connecting portion 305.
The degree of concentration can be adjusted using at least one shutter 306 attached to the No. 2. As a preferable shape of the shutter 306, there are a strip shape, a trapezoid shape, and a shape in which one side of the strip or the trapezoid is cut out in a half-moon shape as shown in FIGS. 3B to 3D. The connecting portion 305 includes a groove 307 opened on the side of the shutter 306 near the microwave power source, and a fixing bottle 308. In addition, an insulator 309 made of glass, Teflon, or the like is provided around the hole 304. In these, the shutter 306 is the waveguide 30 only at the connecting portion 305.
This is for contacting with 2. Here, some shutter 3
If a contact is provided between 06 and the waveguide 302, this will be an arc contact.

(Embodiments 4 and 5) In this apparatus example, as in the side sectional views shown in FIG. 6 in Embodiments 1 and 2,
The case where the strip-shaped member 101 and the separating means 109 are arranged may be mentioned. The arrangement here is the separation means 109.
The case where the strip-shaped member 101 is curved concentrically along the outer peripheral surface of FIG. Here, the support / transport ring 104,
It is preferable that metal meshes 502 and 502 '(one side is not shown) for confining the microwave heating region are attached to both side surfaces of 105, and the mesh is preferably 1/2 wavelength of the microwave used. Below, it is more preferable that the wavelength is not more than ¼ wavelength and that the permeation of the processing gas can be secured.

Further, the surface spacing L ₄ of the strip-shaped member 101 at the bending start end and the bending end end of the strip-shaped member 101 prevents the microwave energy from leaking from here and confines the microwave heating region within the curved shape. Therefore, it is necessary to set the wavelength shorter than at least half the wavelength of the radiated microwave.

The relative arrangement of the separating means 109 and the strip-shaped member 101 is preferably concentric, but as long as the separating means 109 is arranged in a curved shape of the strip-shaped member 101. The radiated microwave energy is confined within the curved shape without any problem, and the direction in which the hole 208 is directed is not particularly limited.

Further, the three gas introduction pipes 112a, 112
b and 112c are the separating means 109 and the strip-shaped member 10.
It is arranged in the area surrounded by 1 and at angles of θ ₁ , θ ₂ , and θ ₃ with reference to the central axis HH ′ of the film forming chamber.

(Examples 6 and 7) In Examples 4 and 5,
The microwave applicator 201 may have the same configuration except that the microwave applicator 301 used in Example 2 is replaced.

(Embodiments 8 to 11) In Embodiments 1, 2, 4 and 5, the microwave applicator 201 has the same structure except that a microwave applicator of a slow wave circuit type not shown is used. You can

(Embodiment 12) In this apparatus example, as shown in FIG. 7, a strip-shaped member 101 is provided in a microwave / plasma CVD apparatus for forming a deposited film having the same structure as the microwave heating apparatus shown in Example 2. The vacuum containers 701 and 702 for feeding and winding are connected to gas gates 801, 802, 803.
And the device connected using 804.

Reference numeral 703 denotes a bobbin for feeding the belt-shaped member, 7
Reference numeral 04 denotes a bobbin for winding the strip-shaped member, and the strip-shaped member is conveyed in the direction of the arrow in the drawing. Of course, this can also be reversed and conveyed. Reference numerals 705 and 706 are transport rollers that also serve to adjust the tension and position the belt-shaped member. 7
Reference numerals 12 and 713 are temperature adjusting mechanisms used for preheating or cooling the belt-shaped member. 709, 709a and 709
b is a throttle valve for adjusting the displacement, 720, 720
Exhaust pipes a and 720b are connected to an exhaust pump (not shown). Reference numerals 714, 715 are pressure gauges, 805, 806, 807, and 808 are gate gas introduction pipes, and 809, 810, 811, 812 are gate gas exhaust pipes, and a gate gas and / or a deposited film forming raw material is formed by an exhaust pump (not shown). The gas and / or process gas is exhausted. Reference numerals 601a and 601b denote film forming spaces having the strip-shaped member 101 as a side wall. Reference numeral 601 is a processing space having the strip-shaped member 101 as a side wall.

Example 13 Using the continuous microwave plasma CVD apparatus (FIG. 7) shown in Example 12, amorphous silicon was deposited and then crystallized by microwave heating. The microwave applicator is No. Thirteen
This type was used for each isolation room.

First, a vacuum container 701 having a substrate delivery mechanism was thoroughly degreased and washed to make SUS430BA.
Band-shaped substrate (width 60 cm x length 100 m x thickness 0.2 m
m) the wound bobbin 703 is set, and the strip-shaped member 101 is attached to the gas gates 801, 802, 803, 80.
4 and the vacuum container 702 having a substrate winding mechanism through the transport mechanism in the isolation containers 400a and 400b,
The tension was adjusted so that there was no slack. Table 18 shows conditions such as the arrangement of the curved gas introduction pipe of the belt-shaped member. As the gas supply means, a type having a single gas introduction pipe having the configuration shown in FIGS. 1 and 5 was used.

Therefore, the vacuum vessels 701 and 702 and the isolation vessels 400a, 400 and 400b are roughly evacuated by a rotary pump (not shown), and then a mechanical booster pump (not shown) is activated to evacuate to a pressure of around 10 ^-3 Torr. , And using the temperature control mechanisms 106a and 107a,
While maintaining the substrate surface temperature at 280 ° C., an oil diffusion pump (HS-32 manufactured by Varian) (not shown) was used for 5 × 10 ⁻⁶ Tor.
A vacuum was drawn up to r or less.

When sufficient degassing was performed, SiH ₄
(PH ₃ 100 ppm) at a flow rate of 90 sccm, a raw material gas for forming a deposited film is introduced through a gas introduction pipe, and the opening of a throttle valve 700 a attached to the oil diffusion pump is adjusted to adjust the pressure in the film forming chamber 601 a. It was kept at 12 mTorr. At this time, the pressure in the isolation container 400a is 4 mT.
It was orr.

When the pressure became stable, a microwave of 1.2 KW in effective power was emitted from the applicator 301 from a microwave power source (not shown). Immediately, the introduced source gas is turned into plasma to form a microwave plasma region, and the microwave plasma region is transferred to the transfer ring 10.
Wire mesh 501a (linear 1m attached to the side of 4a
m, interval 5 mm) did not leak to the vacuum container side, and no microwave leakage was detected.

Next, H ₂ gas was caused to flow at 10 sccm through the gas introduction pipe 112 arranged in the processing space 601, and the processing space pressure was maintained at 12 mTorr. Isolation container 40 at this time
The pressure in 0 was 4 mTorr.

A microwave of 3.5 KW in effective power was emitted from the applicator 301 from a microwave power source (not shown).

The microwave did not leak from the wire net 501 attached to the side surface of the transfer ring 104 to the vacuum container side, and no microwave leak was detected. When the back surface temperature of the strip-shaped member 101 was measured with a thermocouple (not shown), it was 600 ° C., and the standard deviation of the in-plane distribution was 2 ° C., which was a uniform temperature distribution over a large area.

Therefore, the supporting / conveying rollers 102, 1
03 and supporting / conveying rings 104 and 105 (neither drive mechanism is shown) were activated to control the conveying speed of the belt-shaped member 101 to 1.2 m / min.

The gas gates 801, 802, 80
3, 804, gate gas introduction pipes, 805, 806, 8
From 07,808, H ₂ gas is used as a gate gas for 500 s
ccm flow, exhaust from exhaust holes 809, 810, 811 and 812 by an oil diffusion pump (not shown), gas gate internal pressure is 1 m
It was controlled to be Torr.

In this embodiment, since a thin film is not formed in the isolation container 400b, H ₂ gas is caused to flow at 10 sccm from the gas introduction pipe 602b and the pressure in the film formation space 601b is set to 12 m.
The pressure in the isolation container 400b at this time was 12 mTorr.

After forming an n ^- amorphous silicon layer over the entire length of the strip-shaped member 101 and performing microwave heat treatment, it was cooled and arbitrarily cut into 10 mm squares within the entire surface to evaluate crystallinity. This evaluation was performed by observing a reflection type high-speed electron beam diffraction image and measuring Raman scattering. As a result, it was found that spot-like diffraction points were observed and crystallized in all the cut-out samples. Furthermore, in Raman scattering measurement, Si of 520 cm ^-1
A sharp peak due to the TO mode of -Si is seen, and its half-value width is 6.3 cm ^{-1, which} is good crystalline silicon.
It was also found that there was almost no difference in the in-plane distribution in the width and the longitudinal direction of the strip-shaped member, and that the crystallinity had a uniform in-plane distribution.

Example 14 In this example, the crystalline silicon solar cell shown in FIG. 8 was produced. In the figure, 901 is a crystalline silicon n ⁻ layer and 902 is an amorphous silicon P.
^{The +} layer, 903 is a transparent conductive film, and 904 is a collector electrode.

The gas introduction conditions of this embodiment are as shown in Table 19. As shown in the table, the same procedure as in Example 13 was performed except that 2 sccm of a mixed gas of SiH ₄ (BF ₃ 300 ppm) was introduced from the gas introduction pipe 602b in the isolation container 400b. At this time, the pressure in the film formation space 601b is set to 12 m.
The pressure of the isolation container 400b is 2 mTo.
It was rr. When the pressure became stable, a microwave of 0.8 KW was radiated from the applicator 301 with an effective power from a microwave power source (not shown).

After the semiconductor layers were laminated and formed over the entire length of the strip-shaped member 101, the strip-shaped member 101 was cooled and taken out, and further, a solar cell module of 35 cm × 70 cm was continuously produced by a continuous modularizing device.

Regarding the manufactured solar cell module, A
When the characteristics were evaluated under M1.5 (100 mW / cm ² ) light irradiation, a photoelectric conversion efficiency of 7.3% or more was obtained.
Furthermore, the variation in characteristics between modules was within 5%.

AM1.5 (100 mW / cm ² )
The rate of change of the photoelectric conversion efficiency with respect to the initial value after continuous irradiation with light for 500 hours was measured and found to be within 1%.

It was possible to fabricate a 5 KW power supply system by connecting these modules.

[0142]

According to the microwave heating means of the present invention, which has a large area and is uniform, the annealing time of, for example, a thin film semiconductor can be greatly shortened. Specifically, in the past, a crystalline silicon solar cell was produced by crystallizing the amorphous silicon by annealing for about 10 hours. However, according to the present invention, Compared to the conventional case, the same annealing effect can be obtained by only performing microwave irradiation for about 1 minute, which is an extremely short time. Further, according to the microwave heating means having a large area and uniform in the present invention, it is possible to dramatically expand the area that can be subjected to the heat treatment at one time, as compared with the conventionally attempted laser annealing, and it is possible to reduce the temperature. It is possible to mass-produce a large-area photovoltaic element with a large cost.

According to the present invention, it is also possible to control the depth of annealing in the film thickness direction by appropriately adjusting the microwave power.

From the above, it is possible to provide a method and apparatus for continuously forming a functional deposited film capable of continuously forming a crystalline photovoltaic element having high efficiency and high photoelectric conversion efficiency with good stability. Become.

[0145]

[Table 1]

[0146]

[Table 2]

[0147]

[Table 3]

[0148]

[Table 4]

[0149]

[Table 5]

[0150]

[Table 6]

[0151]

[Table 7]

[0152]

[Table 8]

[0153]

[Table 9]

[0154]

[Table 10]

[0155]

[Table 11]

[0156]

[Table 12]

[0157]

[Table 13]

[0158]

[Table 14]

[0159]

[Table 15]

[0160]

[Table 16]

[0161]

[Table 17]

[0162]

[Table 18]

[0163]

[Table 19]

[Brief description of drawings]

FIG. 1 is a schematic perspective view of a microwave heating device of the present invention.

FIG. 2 is a schematic perspective view showing an example of a microwave applicator means of the present invention.

FIG. 3 is a schematic perspective view showing another example of the microwave applicator means of the present invention.

FIG. 4 is a schematic view showing a cross section of the microwave heating apparatus of the present invention.

FIG. 5 is a schematic side sectional view schematically showing an example of arrangement of a belt-shaped member transport mechanism and a gas introduction pipe in the present invention.

FIG. 6 is a schematic side cross-sectional view schematically showing another example of the arrangement of the belt-shaped member transport mechanism and the gas introduction pipe in the present invention.

FIG. 7 is a conceptual diagram showing an example of a continuous microwave plasma CVD apparatus of the present invention.

FIG. 8 is a conceptual diagram showing a cross section of a photovoltaic element manufactured according to the present invention.

[Explanation of symbols]

101 band-shaped members 102, 102a, 102b, 103, 103a, 10
3b Supporting / conveying rollers 104, 104a, 104b, 105, 105a, 10
5b Transport ring 106, 106a, 106b, 107, 107a, 10
7b Temperature control mechanism 108,108a, 108b, 201,301 Microwave applicator 109,109a, 109b Microwave permeable member 110,416 Metal cylinder 111,114,115,501,501a, 501
b, 501 ', 501'a, 501'b, 502, 50
2'Wire net 112a, 112b, 112c, 813, 814 Gas introduction pipe 113 Microwave heating region 201, 301 Microwave applicator 202, 302 Circular waveguide 203, 204, 205, 206, 207, 208 Hole 303, 405, 412 Opening 305 Connecting part 306 Shutter 307 Groove 308 Fixing pin 309 Insulator 400, 400a, 400b Isolation container 401, 402 Fixing flange 403 Square circular converting waveguide 404, 411 Connecting flange 406, 407, 413, 414 O-ring 408, 415 Cooling groove 409 Opening end portion 410, 417 Earthing finger 418 Connecting plate 419, 710, 711, 718, 719, 720, 7
20a, 720b Exhaust hole 420 Connection flange 421 Rectangular waveguide 504, 505, 601 Processing space 601a, 601b Film forming space 701, 702 Vacuum container 703 Sending bobbin 704 Winding bobbin 705, 706 Conveying roller 707, 708, 709, 709a, 709b Throttle valve 712, 713 Temperature adjustment mechanism 714, 715 Pressure gauge 805, 806, 807, 809 Gate gas introduction pipe 801, 802, 803, 804 Gas gate 901 n ^- Crystalline silicon layer 902p ⁺ Amorphous silicon layer 903 Transparent Conductive layer 904 Current collecting electrode

[Procedure amendment]

[Submission date] July 23, 1993

[Procedure Amendment 1]

[Document name to be corrected] Drawing

[Correction target item name] All drawings

[Correction method] Change

[Correction content]

[Figure 1]

[Fig. 2]

[Figure 3]

[Figure 5]

[Figure 6]

[Figure 4]

[Figure 7]

[Figure 8] ─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] December 2, 1993

[Procedure Amendment 1]

[Document name to be corrected] Drawing

[Correction target item name] All drawings

[Correction method] Change

[Correction content]

[Fig. 2]

[Figure 8]

[Figure 1]

[Figure 3]

[Figure 4]

[Figure 5]

[Figure 6]

[Figure 7]

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Goto Yoshino 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Shotaro Okabe 3-30-2 Shimomaruko, Ota-ku, Tokyo Canono (72) Inventor Naoshi Yoshiri 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (43)

[Claims] 1. A columnar processing space having a side wall of the belt-shaped member is formed while the belt-shaped member on which the deposited film is formed is continuously moved, and a microwave is applied to the processing space by a microwave applicator means. A method for continuously forming a functional deposited film, which comprises a microwave heating step of performing a heating process on a sidewall of a deposited film in the processing space by radiating or transmitting wave energy, the microwave energy being a microwave. The microwave applicator means having directivity in one direction perpendicular to the traveling direction of the microwave radiates or transfers the microwave energy to the processing space, thereby continuously forming a functional deposited film. . 2. In the middle of the moving belt-shaped member,
Using the bending start end forming means and the bending end end forming means,
The function according to claim 1, wherein the band-shaped member is curved by leaving a gap in the longitudinal direction of the band-shaped member between the curving start end forming means and the curving end forming means to form a side wall of the pretreatment space. Method for continuous formation of conductive deposited film. 3. The microwave energy is radiated or transmitted into the processing space from a gap left in the longitudinal direction of the strip-shaped member between the bending start end forming means and the bending end end forming means. The method for continuously forming a functionally deposited film according to [4]. 4. The microwave applicator means is projected into the processing space from one of both end surfaces of a columnar processing space formed by using the belt-shaped member as a side wall to transfer microwave energy into the processing space. The method for continuously forming a functionally deposited film according to claim 1 or 2, wherein the functional deposited film is radiated or transmitted. 5. The microwave energy radiated or transferred from the microwave applicator means is radiated or radiated into the processing space via a microwave permeable member provided between the processing space and the applicator means. The continuous method for forming a functional deposited film according to claim 1, wherein the functional deposited film is transmitted. 6. The microwave applicator means is disposed close to and substantially parallel to the width direction of the strip-shaped member within a range where the microwave-transmissive member does not come into contact with the inside of the columnar processing space. The method for continuously forming a functional deposited film according to any one of claims 1 to 5, wherein the microwave energy is radiated or transmitted. 7. The microwave applicator means radiates or transmits uniform microwave energy in a length substantially the same as the width direction of the strip-shaped member.
The method for continuously forming a functionally deposited film according to any one of 1. 8. The microwave applicator means,
The method for continuously forming a functional deposited film according to any one of claims 1 to 7, wherein the method is separated from the processing space via the microwave transparent member. 9. The functional deposited film according to claim 1, wherein the microwave energy radiated or transferred into the columnar processing space is prevented from leaking to the outside of the processing space. Continuous forming method. 10. A continuous deposition apparatus for a functional deposited film, which continuously forms a functional deposited film by a microwave heating method on a continuously moving strip-shaped member, wherein the strip-shaped member is continuously formed in its longitudinal direction. And a curved portion for forming a columnar processing chamber capable of holding the inside of the belt-shaped member substantially as a vacuum by curving the belt-shaped member in the middle while moving the belt-shaped member to make it a side wall. Forming means, and a microwave applicator means for emitting microwave energy with directivity in one direction perpendicular to the traveling direction of microwaves to generate a microwave heating region in the processing chamber. Separating the processing chamber from the microwave applicator means and evacuating the processing chamber. An exhaust means and a means for introducing a processing gas into the processing chamber, and forms a deposited film on the surface of the continuously moving strip-shaped member or heat-treats the deposited film formed in advance. An apparatus for continuously forming a functional deposited film, which is characterized in that 11. The bending portion forming means includes at least one set of bending start end forming means and bending end end forming means, and the bending start end forming means and the bending end end forming means are provided. The apparatus for continuously forming a functional deposited film according to claim 10, wherein the strip-shaped member is arranged with a gap left in the longitudinal direction. 12. The curved portion forming means includes at least a pair of supporting / conveying rollers and a supporting / conveying ring, and the pair of supporting / conveying rollers form a gap in the longitudinal direction of the belt-shaped member. The continuous deposition apparatus for a functional deposited film according to claim 11, which is arranged in parallel with the rest. 13. The separation means is disposed substantially outside of the processing chamber in parallel with a gap left between the bending start end forming means and the bending end end forming means. The apparatus for continuously forming a functional deposited film according to claim 11 or 12. 14. The separating means is provided from one of both end surfaces of a columnar processing chamber having the strip-shaped member as a side wall,
13. The apparatus for continuously forming a functional deposited film according to claim 11, wherein the apparatus is made to project into the processing chamber substantially parallel to the width direction of the belt-shaped member. 15. The apparatus for continuously forming a functional deposited film according to claim 10, wherein the separating means has a substantially cylindrical shape. 16. The apparatus for continuously forming a functional deposited film according to claim 10, wherein the separating means has a substantially semi-cylindrical shape. 17. The functionality according to claim 10, wherein the microwave applicator means is arranged so as to be separated from the peripheral wall of the separating means and to be included in the inside of the separating means. Continuous film forming device. 18. The apparatus for continuously forming a functional deposited film according to claim 10, wherein the separating means is provided with a cooling means. 19. The apparatus for continuously forming a functionally deposited film according to claim 18, wherein the cooling means is an air flow flowing along the inner peripheral surface of the separating means. 20. The cooling means is disposed inside the separating means, and is concentrically arranged with the separating means so as to form a conduit structure capable of flowing a cooling medium between the cooling means and the separating means. Item 19. A continuous deposition apparatus for functionally deposited film as described in Item 18. 21. The microwave applicator means is a microwave transmission waveguide, and the microwave energy is substantially evenly distributed in the waveguide in a direction perpendicular to the traveling direction of the microwave. The continuous deposition apparatus for functionally deposited film according to any one of claims 10 to 20, wherein substantially rectangular holes are formed in order to direct and radiate in a direction. 22. The functional deposited film according to claim 21, wherein at least one rectangular hole is provided on one surface of the waveguide, and a microwave is radiated from the hole. Continuous forming equipment. 23. When making a plurality of the rectangular holes,
23. The apparatus for continuously forming a functional deposited film according to claim 22, wherein the holes are arranged at intervals in the longitudinal direction of the waveguide. 24. The apparatus for continuously forming a functionally deposited film according to claim 22, wherein the rectangular hole is a single substantially rectangular shape having a large aspect ratio. 25. The functionality of claim 24, wherein the dimensions of the rectangular hole are substantially equal to the width and length of the waveguide in the longitudinal direction with a dimension greater than one wavelength of microwaves. Continuous film forming device. 26. At least one of microwaves radiated from the rectangular hole in the longitudinal direction of the waveguide.
26. The apparatus for continuously forming a functional deposited film according to claim 22, wherein the microwave energy is uniformly radiated with a length equal to or longer than a wavelength. 27. Shutter means are provided in the square holes to ensure that microwave energy of substantially uniform density is radiated from the square holes over the entire length of the microwave applicator means. 27. A device for continuously forming a functional deposited film according to any one of 26. 28. The apparatus for continuously forming a functional deposited film according to claim 10, wherein the microwave energy is confined in a columnar processing chamber formed by bending the belt-shaped member. 29. A functional deposited film continuous forming apparatus for continuously forming a large-area functional deposited film by a microwave heating method on a continuously moving strip-shaped member, the strip-shaped member having a longitudinal direction. To form a columnar processing chamber capable of maintaining a substantially vacuum inside by means of moving the strip-shaped member continuously and curving the strip-shaped member in the middle while curving in the middle thereof while moving the strip-shaped member. In order to generate a microwave heating region in the processing chamber and the curved portion forming means,
A microwave applicator means adapted to transmit the evanescent microwave energy with directivity in one direction perpendicular to the traveling direction of the microwave, and from the microwave applicator means, perpendicular to the traveling direction of the microwave. Evanescent microwave energy transmitted with directivity in one direction, separating means for transmitting the microwave applicator means to the processing chamber and separating the microwave applicator means from the processing chamber, and exhaust means for exhausting the processing chamber. And a means for introducing a processing gas into the processing chamber, wherein a deposited film is formed on the surface of the continuously moving strip-shaped member or a previously formed deposited film is heat-treated. An apparatus for continuously forming a functionally deposited film, characterized by: 30. The bending portion forming means includes at least one set of bending start end forming means and bending end end forming means, and the bending start end forming means and the bending end end forming means are provided. 30. The continuous functional deposition film forming apparatus according to claim 29, wherein the strip-shaped member is disposed with a gap left in the longitudinal direction. 31. The curved portion forming means includes at least a pair of supporting / conveying rollers and a supporting / conveying ring, and the pair of supporting / conveying rollers leave a gap in the longitudinal direction of the belt-shaped member. 31. The apparatus for continuously forming a functional deposited film according to claim 30, wherein the apparatus is continuously disposed in parallel. 32. The separating means is arranged substantially parallel to a gap left between the bending start end forming means and the bending end end forming means and arranged outside the processing chamber. Item 32. A device for continuously forming a functional deposited film according to Item 30 or 31. 33. The separating means is provided from one of both end surfaces of a columnar processing chamber having the strip-shaped member as a side wall,
32. The apparatus for continuously forming a functional deposited film according to claim 29, wherein the apparatus is projected into the processing chamber substantially parallel to the width direction of the belt-shaped member. 34. The apparatus for continuously forming a functional deposited film according to claim 29, wherein the separating means has a substantially cylindrical shape. 35. The apparatus for continuously forming a functional deposited film according to claim 29, wherein the separating means has a substantially semi-cylindrical shape. 36. The functionality according to any one of claims 29 to 35, wherein the microwave applicator means is arranged so as to be separated from a peripheral wall of the separating means and to be included in the inside of the separating means. Continuous film forming device. 37. The apparatus for continuously forming a functional deposited film according to claim 29, wherein the separating means is provided with a cooling means. 38. The apparatus for continuously forming a functionally deposited film according to claim 37, wherein the cooling means is an air flow flowing along the inner peripheral surface of the separating means. 39. The cooling means is concentrically arranged with the separating means so as to form a conduit structure disposed inside the separating means and allowing a cooling medium to flow between the cooling means and the separating means. Item 38. A device for continuously forming a functional deposited film as described in Item 37. 40. The microwave applicator means is an elongated slow-wave circuit waveguide, wherein the slow-wave circuit waveguide substantially uniformly transmits evanescent microwave energy in the longitudinal direction into the processing space. The continuous deposition apparatus for functionally deposited film according to any one of claims 29 to 39, which has a ladder-like structure. 41. The apparatus for continuously forming a functional deposited film according to claim 40, wherein the length of the ladder-shaped structure is substantially equal to the length of the strip-shaped member in the width direction. 42. The functionality according to claim 40 or 41, wherein the ladder-like structure is a structure that uniformly transmits evanescent microwave energy at a length of at least the wavelength of microwaves transmitted in the longitudinal direction thereof. Continuous film forming device. 43. The apparatus for continuously forming a functional deposited film according to claim 29, wherein the microwave energy is confined in a columnar film forming chamber formed by bending the belt-shaped member.