TW200802822A - Nonvolatile rewriteable memory cell comprising a resistivity-switching oxide or nitride and an antifuse - Google Patents
Nonvolatile rewriteable memory cell comprising a resistivity-switching oxide or nitride and an antifuseInfo
- Publication number
- TW200802822A TW200802822A TW096110614A TW96110614A TW200802822A TW 200802822 A TW200802822 A TW 200802822A TW 096110614 A TW096110614 A TW 096110614A TW 96110614 A TW96110614 A TW 96110614A TW 200802822 A TW200802822 A TW 200802822A
- Authority
- TW
- Taiwan
- Prior art keywords
- resistivity
- antifuse
- memory cell
- nitride
- switching
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- -1 nitride compound Chemical class 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0078—Write using current through the cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/395,421 US7829875B2 (en) | 2006-03-31 | 2006-03-31 | Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200802822A true TW200802822A (en) | 2008-01-01 |
TWI348757B TWI348757B (en) | 2011-09-11 |
Family
ID=38420527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096110614A TWI348757B (en) | 2006-03-31 | 2007-03-27 | Nonvolatile rewriteable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
Country Status (7)
Country | Link |
---|---|
US (1) | US7829875B2 (zh) |
EP (1) | EP2002444A1 (zh) |
JP (1) | JP2009535793A (zh) |
KR (1) | KR20090006839A (zh) |
CN (1) | CN101416252B (zh) |
TW (1) | TWI348757B (zh) |
WO (1) | WO2007126678A1 (zh) |
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WO2007126678A1 (en) | 2007-11-08 |
CN101416252A (zh) | 2009-04-22 |
KR20090006839A (ko) | 2009-01-15 |
EP2002444A1 (en) | 2008-12-17 |
TWI348757B (en) | 2011-09-11 |
US7829875B2 (en) | 2010-11-09 |
CN101416252B (zh) | 2011-11-30 |
US20070228354A1 (en) | 2007-10-04 |
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