TW200746145A - Programming a normally single phase chalcogenide material for use as a memory or FPLA - Google Patents

Programming a normally single phase chalcogenide material for use as a memory or FPLA

Info

Publication number
TW200746145A
TW200746145A TW096112889A TW96112889A TW200746145A TW 200746145 A TW200746145 A TW 200746145A TW 096112889 A TW096112889 A TW 096112889A TW 96112889 A TW96112889 A TW 96112889A TW 200746145 A TW200746145 A TW 200746145A
Authority
TW
Taiwan
Prior art keywords
memory
fpla
programming
chalcogenide material
single phase
Prior art date
Application number
TW096112889A
Other languages
English (en)
Other versions
TWI342023B (en
Inventor
George A Gordon
Ward D Parkinson
John M Peters
Tyler Lowrey
Stanford Ovshinsky
Guy C Wicker
Ilya V Karpov
Charles C Kuo
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Publication of TW200746145A publication Critical patent/TW200746145A/zh
Application granted granted Critical
Publication of TWI342023B publication Critical patent/TWI342023B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW096112889A 2006-04-20 2007-04-12 Programming a normally single phase chalcogenide material for use as a memory TWI342023B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/407,573 US7414883B2 (en) 2006-04-20 2006-04-20 Programming a normally single phase chalcogenide material for use as a memory or FPLA

Publications (2)

Publication Number Publication Date
TW200746145A true TW200746145A (en) 2007-12-16
TWI342023B TWI342023B (en) 2011-05-11

Family

ID=38476121

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096112889A TWI342023B (en) 2006-04-20 2007-04-12 Programming a normally single phase chalcogenide material for use as a memory

Country Status (6)

Country Link
US (2) US7414883B2 (zh)
JP (2) JP2009534835A (zh)
KR (2) KR101196933B1 (zh)
CN (1) CN101427396B (zh)
TW (1) TWI342023B (zh)
WO (1) WO2007127014A2 (zh)

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TWI572574B (zh) * 2015-03-20 2017-03-01 英特爾公司 硫族玻璃組成物及硫族開關裝置
TWI698980B (zh) * 2018-07-17 2020-07-11 旺宏電子股份有限公司 開關元件與記憶體元件
US11183633B2 (en) 2016-10-04 2021-11-23 Sony Semiconductor Solutions Corporation Switch device, storage apparatus, and memory system

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US9203024B2 (en) * 2007-07-25 2015-12-01 Intel Corporation Copper compatible chalcogenide phase change memory with adjustable threshold voltage
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US8345472B2 (en) * 2010-12-21 2013-01-01 Intel Corporation Three-terminal ovonic threshold switch as a current driver in a phase change memory
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TWI572574B (zh) * 2015-03-20 2017-03-01 英特爾公司 硫族玻璃組成物及硫族開關裝置
US11183633B2 (en) 2016-10-04 2021-11-23 Sony Semiconductor Solutions Corporation Switch device, storage apparatus, and memory system
TWI698980B (zh) * 2018-07-17 2020-07-11 旺宏電子股份有限公司 開關元件與記憶體元件

Also Published As

Publication number Publication date
US20080273379A1 (en) 2008-11-06
KR20080114801A (ko) 2008-12-31
US20070247899A1 (en) 2007-10-25
WO2007127014A3 (en) 2008-06-26
JP2009534835A (ja) 2009-09-24
JP5678118B2 (ja) 2015-02-25
CN101427396A (zh) 2009-05-06
JP2013179311A (ja) 2013-09-09
US7414883B2 (en) 2008-08-19
US7864567B2 (en) 2011-01-04
TWI342023B (en) 2011-05-11
KR101196933B1 (ko) 2012-11-05
WO2007127014A2 (en) 2007-11-08
CN101427396B (zh) 2012-06-27
KR20110046563A (ko) 2011-05-04
KR101238503B1 (ko) 2013-03-04

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