TW200741033A - Ceramic coating member for semiconductor processing apparatus - Google Patents

Ceramic coating member for semiconductor processing apparatus

Info

Publication number
TW200741033A
TW200741033A TW096108628A TW96108628A TW200741033A TW 200741033 A TW200741033 A TW 200741033A TW 096108628 A TW096108628 A TW 096108628A TW 96108628 A TW96108628 A TW 96108628A TW 200741033 A TW200741033 A TW 200741033A
Authority
TW
Taiwan
Prior art keywords
processing apparatus
semiconductor processing
ceramic coating
layer
coating member
Prior art date
Application number
TW096108628A
Other languages
English (en)
Chinese (zh)
Other versions
TWI351444B (enrdf_load_stackoverflow
Inventor
Yoshiyuki Kobayashi
Takahiro Murakami
Yoshio Harada
Junichi Takeuchi
Ryo Yamasaki
Keigo Kobayashi
Original Assignee
Tokyo Electron Ltd
Tocalo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tocalo Co Ltd filed Critical Tokyo Electron Ltd
Publication of TW200741033A publication Critical patent/TW200741033A/zh
Application granted granted Critical
Publication of TWI351444B publication Critical patent/TWI351444B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW096108628A 2006-03-20 2007-03-13 Ceramic coating member for semiconductor processing apparatus TW200741033A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006076196A JP5324029B2 (ja) 2006-03-20 2006-03-20 半導体加工装置用セラミック被覆部材

Publications (2)

Publication Number Publication Date
TW200741033A true TW200741033A (en) 2007-11-01
TWI351444B TWI351444B (enrdf_load_stackoverflow) 2011-11-01

Family

ID=38522570

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108628A TW200741033A (en) 2006-03-20 2007-03-13 Ceramic coating member for semiconductor processing apparatus

Country Status (5)

Country Link
JP (1) JP5324029B2 (enrdf_load_stackoverflow)
KR (2) KR100939403B1 (enrdf_load_stackoverflow)
CN (1) CN101074473B (enrdf_load_stackoverflow)
TW (1) TW200741033A (enrdf_load_stackoverflow)
WO (1) WO2007108546A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI581361B (zh) * 2012-05-07 2017-05-01 Tocalo Co Ltd Electrostatic chuck and electrostatic chuck manufacturing method
TWI816975B (zh) * 2019-02-14 2023-10-01 日商日本碍子股份有限公司 燒成夾具

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* Cited by examiner, † Cited by third party
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JP4999721B2 (ja) * 2008-02-05 2012-08-15 トーカロ株式会社 優れた外観を有する溶射皮膜被覆部材およびその製造方法
KR101371640B1 (ko) * 2010-03-30 2014-03-06 엔지케이 인슐레이터 엘티디 반도체 제조 장치용 내식성 부재 및 그 제법
CN102822115B (zh) * 2010-03-30 2017-06-27 日本碍子株式会社 半导体制造装置用耐腐蚀性构件及其制法
US20120177908A1 (en) * 2010-07-14 2012-07-12 Christopher Petorak Thermal spray coatings for semiconductor applications
KR101236351B1 (ko) * 2010-11-30 2013-02-22 (주)제니스월드 엘이디용 유기금속화학증착장비 쿼츠 실링의 코팅방법
JP2013095973A (ja) * 2011-11-02 2013-05-20 Tocalo Co Ltd 半導体製造装置用部材
KR101637801B1 (ko) * 2012-05-22 2016-07-07 가부시끼가이샤 도시바 플라즈마 처리 장치용 부품 및 플라즈마 처리 장치용 부품의 제조 방법
TW201546007A (zh) * 2014-06-11 2015-12-16 Creating Nano Technologies Inc 玻璃結構之製造方法與設備
JP6362461B2 (ja) * 2014-07-14 2018-07-25 有限会社コンタミネーション・コントロール・サービス 腐食防止方法
CN105428195B (zh) * 2014-09-17 2018-07-17 东京毅力科创株式会社 等离子体处理装置用的部件和部件的制造方法
KR101723931B1 (ko) * 2015-10-12 2017-04-06 (주)티티에스 그래눌 형태의 세라믹 커버링층이 증착된 표면처리 제품
US10422028B2 (en) 2015-12-07 2019-09-24 Lam Research Corporation Surface coating treatment
US10388492B2 (en) * 2016-04-14 2019-08-20 Fm Industries, Inc. Coated semiconductor processing members having chlorine and fluorine plasma erosion resistance and complex oxide coatings therefor
CN109477199B (zh) * 2016-07-14 2021-07-06 信越化学工业株式会社 悬浮等离子体热喷涂用浆料、稀土类氧氟化物热喷涂膜的形成方法和热喷涂构件
WO2020167414A1 (en) * 2019-02-12 2020-08-20 Applied Materials, Inc. Method for fabricating chamber parts
WO2021241645A1 (ja) * 2020-05-28 2021-12-02 京セラ株式会社 通気性プラグ、基板支持アセンブリおよびシャワープレート
CN114959547A (zh) * 2022-05-30 2022-08-30 苏州众芯联电子材料有限公司 提高静电卡盘的电介质层的致密性的工艺、静电卡盘的制备工艺、静电卡盘

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JPS62253758A (ja) * 1986-04-24 1987-11-05 Mishima Kosan Co Ltd レ−ザ−照射によるサ−メツト層形成方法及び連続鋳造用鋳型
JPH04276059A (ja) * 1991-02-28 1992-10-01 Sekiyu Sangyo Kasseika Center 溶射皮膜の改質方法
JPH06128762A (ja) * 1992-10-21 1994-05-10 Hitachi Chem Co Ltd プラズマエッチング用電極板
JPH104083A (ja) * 1996-06-17 1998-01-06 Kyocera Corp 半導体製造用耐食性部材
KR100248081B1 (ko) * 1997-09-03 2000-04-01 정선종 입방정 구조의 와이비에이투씨유쓰리오엑스 박막 제조 방법
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JP3784180B2 (ja) * 1998-10-29 2006-06-07 京セラ株式会社 耐食性部材
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
JP2001308011A (ja) * 2000-04-18 2001-11-02 Ngk Insulators Ltd 半導体製造装置用チャンバー部材
JP3672833B2 (ja) * 2000-06-29 2005-07-20 信越化学工業株式会社 溶射粉及び溶射被膜
JP4051351B2 (ja) * 2004-03-12 2008-02-20 トーカロ株式会社 熱放射性および耐損傷性に優れるｙ２ｏ３溶射皮膜被覆部材およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI581361B (zh) * 2012-05-07 2017-05-01 Tocalo Co Ltd Electrostatic chuck and electrostatic chuck manufacturing method
US9799545B2 (en) 2012-05-07 2017-10-24 Tocalo Co., Ltd. Electrostatic chuck and method of manufacturing electrostatic chuck
TWI816975B (zh) * 2019-02-14 2023-10-01 日商日本碍子股份有限公司 燒成夾具

Also Published As

Publication number Publication date
CN101074473A (zh) 2007-11-21
TWI351444B (enrdf_load_stackoverflow) 2011-11-01
KR20070095211A (ko) 2007-09-28
KR100939403B1 (ko) 2010-01-28
JP5324029B2 (ja) 2013-10-23
KR20090035676A (ko) 2009-04-10
JP2007247042A (ja) 2007-09-27
CN101074473B (zh) 2012-05-30
WO2007108546A1 (ja) 2007-09-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees