TW200739652A - Sample surface inspecting method and inspecting apparatus - Google Patents
Sample surface inspecting method and inspecting apparatusInfo
- Publication number
- TW200739652A TW200739652A TW096102621A TW96102621A TW200739652A TW 200739652 A TW200739652 A TW 200739652A TW 096102621 A TW096102621 A TW 096102621A TW 96102621 A TW96102621 A TW 96102621A TW 200739652 A TW200739652 A TW 200739652A
- Authority
- TW
- Taiwan
- Prior art keywords
- sample surface
- electron
- inspecting
- sample
- electron beam
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/29—Reflection microscopes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
- G01R31/307—Contactless testing using electron beams of integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2441—Semiconductor detectors, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/25—Tubes for localised analysis using electron or ion beams
- H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
- H01J2237/2594—Measuring electric fields or potentials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006016519 | 2006-01-25 | ||
JP2006058862 | 2006-03-06 | ||
JP2006058847 | 2006-03-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200739652A true TW200739652A (en) | 2007-10-16 |
TWI397096B TWI397096B (zh) | 2013-05-21 |
Family
ID=38309189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096102621A TWI397096B (zh) | 2006-01-25 | 2007-01-24 | 試料表面檢查方法及檢查裝置 |
Country Status (5)
Country | Link |
---|---|
US (3) | US20090050802A1 (zh) |
JP (3) | JPWO2007086400A1 (zh) |
KR (1) | KR101487359B1 (zh) |
TW (1) | TWI397096B (zh) |
WO (1) | WO2007086400A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8937283B2 (en) | 2008-04-11 | 2015-01-20 | Ebara Corporation | Specimen observation method and device using secondary emission electron and mirror electron detection |
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JPWO2007086400A1 (ja) * | 2006-01-25 | 2009-06-18 | 株式会社荏原製作所 | 試料表面検査方法及び検査装置 |
JP5058489B2 (ja) * | 2006-01-25 | 2012-10-24 | 株式会社荏原製作所 | 試料表面検査装置及び検査方法 |
TWI435361B (zh) * | 2007-04-16 | 2014-04-21 | Ebara Corp | 電子射線裝置及使用該電子射線裝置之試料觀察方法 |
JP5372856B2 (ja) | 2010-07-15 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
JP6362827B2 (ja) * | 2013-01-26 | 2018-07-25 | 株式会社ホロン | アライメント測定装置およびアライメント測定方法 |
JP6291981B2 (ja) * | 2013-04-08 | 2018-03-14 | 富士電機株式会社 | 半導体装置の製造方法 |
US9847209B2 (en) | 2014-01-13 | 2017-12-19 | Applied Materials Israel Ltd. | Inspection of regions of interest using an electron beam system |
US9466462B2 (en) * | 2014-01-13 | 2016-10-11 | Applied Materials Israel Ltd. | Inspection of regions of interest using an electron beam system |
JP6294758B2 (ja) * | 2014-05-12 | 2018-03-14 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビームのドーズ量異常検出方法 |
US9530200B2 (en) * | 2014-06-20 | 2016-12-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for inspection of a patterned structure |
JP2018113096A (ja) * | 2015-04-13 | 2018-07-19 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム装置 |
US10541104B2 (en) | 2015-07-09 | 2020-01-21 | Applied Materials Israel Ltd. | System and method for scanning an object with an electron beam using overlapping scans and electron beam counter-deflection |
US10054551B2 (en) | 2016-04-20 | 2018-08-21 | Applied Materials Israel Ltd. | Inspection system and method for inspecting a sample by using a plurality of spaced apart beams |
JP6865646B2 (ja) | 2016-11-30 | 2021-04-28 | 住友化学株式会社 | 欠陥検査装置、欠陥検査方法、及びセパレータ捲回体の製造方法 |
US10811652B2 (en) * | 2016-11-30 | 2020-10-20 | Sumitomo Chemical Company, Limited | Defect inspection device |
CN109716480B (zh) * | 2017-01-12 | 2021-02-19 | 爱德万测试株式会社 | 三维分层建模装置的电子束列、三维分层建模装置、以及三维分层建模方法 |
CN111433881B (zh) * | 2017-09-29 | 2023-09-15 | Asml荷兰有限公司 | 样品检查中的图像对比度增强 |
JP7106299B2 (ja) * | 2018-03-06 | 2022-07-26 | 株式会社ニューフレアテクノロジー | 電子ビーム検査装置及び電子ビーム走査のスキャン順序取得方法 |
JP6920539B2 (ja) * | 2018-03-23 | 2021-08-18 | 株式会社日立ハイテク | 走査電子顕微鏡及びその撮像方法 |
JP2021162690A (ja) * | 2020-03-31 | 2021-10-11 | 株式会社ニューフレアテクノロジー | 検査装置 |
US11798778B2 (en) * | 2020-07-20 | 2023-10-24 | Attolight AG | Time-resolved cathodoluminescence sample probing |
US11719533B2 (en) * | 2021-03-28 | 2023-08-08 | Kla Corporation | Modulation of scanning velocity during overlay metrology |
Family Cites Families (43)
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JPS5932145A (ja) * | 1982-08-16 | 1984-02-21 | Hitachi Ltd | 電位検出装置 |
JPS6070651A (ja) * | 1983-09-28 | 1985-04-22 | Hitachi Ltd | 焦点合わせ方法およびその装置 |
DE69223088T2 (de) * | 1991-06-10 | 1998-03-05 | Fujitsu Ltd | Apparat zur Musterüberprüfung und Elektronenstrahlgerät |
JP3409909B2 (ja) * | 1994-03-11 | 2003-05-26 | 株式会社東芝 | ウェーハパターンの欠陥検出方法及び同装置 |
US6172363B1 (en) * | 1996-03-05 | 2001-01-09 | Hitachi, Ltd. | Method and apparatus for inspecting integrated circuit pattern |
JP2002118158A (ja) * | 1996-03-05 | 2002-04-19 | Hitachi Ltd | 回路パターンの検査方法及び検査装置 |
JPH09283582A (ja) * | 1996-04-17 | 1997-10-31 | Fujitsu Ltd | 異物組成自動分析装置及び異物組成自動分析方法 |
JPH10125271A (ja) * | 1996-10-16 | 1998-05-15 | Hitachi Ltd | 走査型電子顕微鏡 |
JP3994691B2 (ja) * | 2001-07-04 | 2007-10-24 | 株式会社日立製作所 | 荷電粒子線装置および自動非点収差調整方法 |
JP4163344B2 (ja) * | 1999-03-05 | 2008-10-08 | 株式会社東芝 | 基板検査方法および基板検査システム |
JP3741897B2 (ja) * | 1999-04-16 | 2006-02-01 | 株式会社ルネサステクノロジ | 荷電ビーム処理装置およびその方法、半導体の不良解析方法 |
JP2001093455A (ja) * | 1999-09-21 | 2001-04-06 | Nikon Corp | 電子ビーム装置 |
JP4312910B2 (ja) * | 1999-12-02 | 2009-08-12 | 株式会社日立製作所 | レビューsem |
JP3781601B2 (ja) * | 2000-01-25 | 2006-05-31 | 日本電子株式会社 | 半導体試料の検査方法 |
JP2002033068A (ja) * | 2000-07-14 | 2002-01-31 | Nikon Corp | 荷電粒子ビーム欠陥検査装置及び方法 |
WO2002013227A1 (fr) * | 2000-07-27 | 2002-02-14 | Ebara Corporation | Appareil d'analyse a faisceau plan |
JP3951590B2 (ja) | 2000-10-27 | 2007-08-01 | 株式会社日立製作所 | 荷電粒子線装置 |
EP1271605A4 (en) * | 2000-11-02 | 2009-09-02 | Ebara Corp | ELECTRON BEAM APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING SAID APPARATUS |
EP1261016A4 (en) * | 2000-12-12 | 2007-06-27 | Ebara Corp | ELECTRON BEAM DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES USING THE ELECTRON BEAM DEVICE |
JP2005235777A (ja) * | 2001-01-10 | 2005-09-02 | Ebara Corp | 電子線による検査装置、検査方法、及びその検査装置を用いたデバイス製造方法 |
US6992290B2 (en) * | 2001-01-10 | 2006-01-31 | Ebara Corporation | Electron beam inspection system and inspection method and method of manufacturing devices using the system |
JP2002303586A (ja) * | 2001-04-03 | 2002-10-18 | Hitachi Ltd | 欠陥検査方法及び欠陥検査装置 |
JP2002310962A (ja) * | 2001-04-19 | 2002-10-23 | Hitachi Ltd | 画像分類方法並びに観察方法及びその装置 |
JP3934461B2 (ja) * | 2002-04-11 | 2007-06-20 | 株式会社キーエンス | 電子顕微鏡のチャージアップ防止方法および電子顕微鏡 |
JP2003331774A (ja) * | 2002-05-16 | 2003-11-21 | Toshiba Corp | 電子ビーム装置およびその装置を用いたデバイス製造方法 |
JP3823073B2 (ja) * | 2002-06-21 | 2006-09-20 | 株式会社日立ハイテクノロジーズ | 電子線を用いた検査方法及び検査装置 |
TWI323783B (en) * | 2003-01-27 | 2010-04-21 | Ebara Corp | Mapping projection type electron beam apparatus for sample inspection by electron emitted from the sample,sample evaluation method and semiconductor device manufacturing using same |
US7198963B2 (en) * | 2003-04-16 | 2007-04-03 | Kla-Tencor Technologies Corporation | Methodologies for efficient inspection of test structures using electron beam scanning and step and repeat systems |
US7138629B2 (en) | 2003-04-22 | 2006-11-21 | Ebara Corporation | Testing apparatus using charged particles and device manufacturing method using the testing apparatus |
JP2004363085A (ja) * | 2003-05-09 | 2004-12-24 | Ebara Corp | 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法 |
WO2004109793A1 (ja) * | 2003-05-30 | 2004-12-16 | Ebara Corporation | 試料検査装置及び方法並びに該試料検査装置及び方法を用いたデバイス製造方法 |
JP2005083948A (ja) * | 2003-09-10 | 2005-03-31 | Hitachi High-Technologies Corp | 検査装置及び検査方法並びにプロセス管理方法 |
JP4253576B2 (ja) * | 2003-12-24 | 2009-04-15 | 株式会社日立ハイテクノロジーズ | パターン欠陥検査方法及び検査装置 |
JP4204458B2 (ja) * | 2003-12-26 | 2009-01-07 | 株式会社日立ハイテクサイエンスシステムズ | 電子線装置による半導体ウェハの検査方法 |
JP2005249745A (ja) * | 2004-03-08 | 2005-09-15 | Ebara Corp | 試料表面検査方法および検査装置 |
JP4253610B2 (ja) | 2004-04-09 | 2009-04-15 | 株式会社日立ハイテクノロジーズ | 電子線検査装置 |
JP4256300B2 (ja) * | 2004-05-28 | 2009-04-22 | 株式会社東芝 | 基板検査方法および基板検査装置 |
JP4413767B2 (ja) * | 2004-12-17 | 2010-02-10 | 株式会社日立ハイテクノロジーズ | パターン検査装置 |
JP2005129546A (ja) | 2005-01-07 | 2005-05-19 | Hitachi High-Technologies Corp | パターン欠陥検査方法及びパターン欠陥検査装置 |
US7462828B2 (en) * | 2005-04-28 | 2008-12-09 | Hitachi High-Technologies Corporation | Inspection method and inspection system using charged particle beam |
JP4147233B2 (ja) * | 2005-08-19 | 2008-09-10 | 株式会社日立製作所 | 電子線装置 |
JP5164317B2 (ja) * | 2005-08-19 | 2013-03-21 | 株式会社日立ハイテクノロジーズ | 電子線による検査・計測方法および検査・計測装置 |
JPWO2007086400A1 (ja) * | 2006-01-25 | 2009-06-18 | 株式会社荏原製作所 | 試料表面検査方法及び検査装置 |
-
2007
- 2007-01-24 JP JP2007555963A patent/JPWO2007086400A1/ja active Pending
- 2007-01-24 WO PCT/JP2007/051047 patent/WO2007086400A1/ja active Application Filing
- 2007-01-24 TW TW096102621A patent/TWI397096B/zh not_active IP Right Cessation
- 2007-01-24 KR KR1020087018240A patent/KR101487359B1/ko active IP Right Grant
- 2007-01-24 US US12/162,067 patent/US20090050802A1/en not_active Abandoned
-
2011
- 2011-05-16 JP JP2011108943A patent/JP5307181B2/ja active Active
-
2012
- 2012-02-16 US US13/398,112 patent/US8525127B2/en active Active
- 2012-12-28 JP JP2012286578A patent/JP5662992B2/ja active Active
-
2013
- 2013-07-30 US US13/954,425 patent/US8859984B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8937283B2 (en) | 2008-04-11 | 2015-01-20 | Ebara Corporation | Specimen observation method and device using secondary emission electron and mirror electron detection |
TWI473140B (zh) * | 2008-04-11 | 2015-02-11 | Ebara Corp | 試料觀察方法與裝置,及使用該方法與裝置之檢查方法與裝置 |
US9966227B2 (en) | 2008-04-11 | 2018-05-08 | Ebara Corporation | Specimen observation method and device using secondary emission electron and mirror electron detection |
Also Published As
Publication number | Publication date |
---|---|
JP2013080722A (ja) | 2013-05-02 |
JPWO2007086400A1 (ja) | 2009-06-18 |
US20120145921A1 (en) | 2012-06-14 |
US8525127B2 (en) | 2013-09-03 |
KR20080087138A (ko) | 2008-09-30 |
TWI397096B (zh) | 2013-05-21 |
US20130313429A1 (en) | 2013-11-28 |
JP2011192654A (ja) | 2011-09-29 |
JP5662992B2 (ja) | 2015-02-04 |
KR101487359B1 (ko) | 2015-01-29 |
US20090050802A1 (en) | 2009-02-26 |
US8859984B2 (en) | 2014-10-14 |
JP5307181B2 (ja) | 2013-10-02 |
WO2007086400A1 (ja) | 2007-08-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |