DE69223088T2 - Apparat zur Musterüberprüfung und Elektronenstrahlgerät - Google Patents

Apparat zur Musterüberprüfung und Elektronenstrahlgerät

Info

Publication number
DE69223088T2
DE69223088T2 DE69223088T DE69223088T DE69223088T2 DE 69223088 T2 DE69223088 T2 DE 69223088T2 DE 69223088 T DE69223088 T DE 69223088T DE 69223088 T DE69223088 T DE 69223088T DE 69223088 T2 DE69223088 T2 DE 69223088T2
Authority
DE
Germany
Prior art keywords
electron beam
beam device
checking apparatus
pattern checking
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223088T
Other languages
English (en)
Other versions
DE69223088D1 (de
Inventor
Ichiro Honjo
Kenji Sugishima
Masaki Yamabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP03137692A external-priority patent/JP3107593B2/ja
Priority claimed from JP24154991A external-priority patent/JP2970113B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69223088D1 publication Critical patent/DE69223088D1/de
Publication of DE69223088T2 publication Critical patent/DE69223088T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • G03F1/86Inspecting by charged particle beam [CPB]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3005Observing the objects or the point of impact on the object
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22Treatment of data
    • H01J2237/221Image processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2441Semiconductor detectors, e.g. diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/24435Microchannel plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2446Position sensitive detectors
    • H01J2237/2447Imaging plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/24495Signal processing, e.g. mixing of two or more signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245Detection characterised by the variable being measured
    • H01J2237/24592Inspection and quality control of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2817Pattern inspection
DE69223088T 1991-06-10 1992-06-10 Apparat zur Musterüberprüfung und Elektronenstrahlgerät Expired - Fee Related DE69223088T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP03137692A JP3107593B2 (ja) 1991-06-10 1991-06-10 パターン検査装置
JP24154991A JP2970113B2 (ja) 1991-09-20 1991-09-20 パターン検査装置
JP29883891 1991-11-14
JP31667691 1991-11-29

Publications (2)

Publication Number Publication Date
DE69223088D1 DE69223088D1 (de) 1997-12-18
DE69223088T2 true DE69223088T2 (de) 1998-03-05

Family

ID=27472085

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223088T Expired - Fee Related DE69223088T2 (de) 1991-06-10 1992-06-10 Apparat zur Musterüberprüfung und Elektronenstrahlgerät

Country Status (3)

Country Link
US (1) US5430292A (de)
EP (1) EP0518633B1 (de)
DE (1) DE69223088T2 (de)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2746125B2 (ja) * 1994-06-17 1998-04-28 日本電気株式会社 電子線露光装置の装置較正用基準マーク及び装置較正方法。
US5892224A (en) * 1996-05-13 1999-04-06 Nikon Corporation Apparatus and methods for inspecting wafers and masks using multiple charged-particle beams
JP3335845B2 (ja) * 1996-08-26 2002-10-21 株式会社東芝 荷電ビーム描画装置及び描画方法
JP3201471B2 (ja) * 1998-04-24 2001-08-20 日本電気株式会社 レティクル検査装置
US6124140A (en) * 1998-05-22 2000-09-26 Micron Technology, Inc. Method for measuring features of a semiconductor device
US6353231B1 (en) * 1998-08-31 2002-03-05 Nikon Corporation Pinhole detector for electron intensity distribution
US6452177B1 (en) * 1998-09-04 2002-09-17 California Institute Of Technology Atmospheric electron x-ray spectrometer
JP4084905B2 (ja) * 1999-05-14 2008-04-30 株式会社東芝 パターン寸法測定装置およびパターン寸法測定方法
AU1926501A (en) * 1999-11-23 2001-06-04 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
AU2001239801A1 (en) 2000-02-19 2001-08-27 Ion Diagnostics, Inc. Multi-beam multi-column electron beam inspection system
US6734428B2 (en) * 2000-02-19 2004-05-11 Multibeam Systems, Inc. Multi-beam multi-column electron beam inspection system
US6943351B2 (en) * 2000-02-19 2005-09-13 Multibeam Systems, Inc. Multi-column charged particle optics assembly
US6515282B1 (en) * 2000-03-28 2003-02-04 Applied Materials, Inc. Testing of interconnection circuitry using two modulated charged particle beams
US6787780B2 (en) 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
KR100465117B1 (ko) * 2000-04-04 2005-01-05 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법
WO2001075949A1 (fr) * 2000-04-04 2001-10-11 Advantest Corporation Appareil d'exposition multifaisceau comprenant une lentille electronique multiaxe, et procede de fabrication d'un dispositif a semi-conducteur
KR20030028461A (ko) * 2000-04-04 2003-04-08 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 반도체소자제조방법
WO2001075950A1 (fr) * 2000-04-04 2001-10-11 Advantest Corporation Appareil d'exposition multifaisceau comprenant une lentille electronique multiaxe, procede de fabrication de ladite lentille, et procede de fabrication d'un dispositif a semi-conducteur
WO2001075947A1 (fr) * 2000-04-04 2001-10-11 Advantest Corporation Appareil d'exposition multifaisceau comprenant une lentille elctronique multi-axiale, une lentille electronique multi-axiale pour la focalisation de faisceaux d'electrons, et procede de fabrication de dispositif semi-conducteur
KR20020084291A (ko) * 2000-04-04 2002-11-04 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법
WO2002001597A1 (fr) * 2000-06-27 2002-01-03 Ebara Corporation Appareil d'inspection a faisceau de particules chargees et procede de fabrication d'un dispositif utilisant cet appareil d'inspection
JP4401556B2 (ja) * 2000-11-15 2010-01-20 株式会社アドバンテスト 電子ビーム補正方法及び電子ビーム露光装置
JP4401557B2 (ja) * 2000-11-15 2010-01-20 株式会社アドバンテスト 電子ビーム露光装置、電子ビーム補正方法、電子ビーム露光方法、及び半導体素子製造方法
JP2002158156A (ja) * 2000-11-17 2002-05-31 Advantest Corp 電子ビーム露光装置、電子ビーム露光方法、及び半導体素子製造方法
US7122795B2 (en) * 2001-04-18 2006-10-17 Multibeam Systems, Inc. Detector optics for charged particle beam inspection system
US6738506B2 (en) 2001-04-18 2004-05-18 Multibeam Systems, Inc. Image processing system for multi-beam inspection
WO2002091421A1 (fr) 2001-05-01 2002-11-14 Nikon Corporation Appareil a faisceau d'electrons et son utilisation pour la fabrication
US6727501B1 (en) * 2001-09-27 2004-04-27 Kla-Tencor Corporation Method for detecting over-etch defects
EP1300870B1 (de) * 2001-10-05 2007-04-04 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Elektronenstrahlvorrrichtung mit Mehrfachstrahl
US6605811B2 (en) * 2001-11-09 2003-08-12 Elionix Inc. Electron beam lithography system and method
US20030132382A1 (en) * 2001-12-18 2003-07-17 Sogard Michael R. System and method for inspecting a mask
DE10227332A1 (de) * 2002-06-19 2004-01-15 Akt Electron Beam Technology Gmbh Ansteuervorrichtung mit verbesserten Testeneigenschaften
US7129503B2 (en) * 2002-10-09 2006-10-31 Hewlett-Packard Development Company, L.P. Determining emitter beam size for data storage medium
US7015467B2 (en) * 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode
US7446474B2 (en) * 2002-10-10 2008-11-04 Applied Materials, Inc. Hetero-junction electron emitter with Group III nitride and activated alkali halide
JP3960544B2 (ja) * 2002-10-11 2007-08-15 パイオニア株式会社 ビーム調整用試料、ビーム調整方法及びビーム調整装置
JP4080297B2 (ja) * 2002-10-28 2008-04-23 株式会社アドバンテスト 電子ビーム照射装置、電子ビーム露光装置、及び不良検出方法
US6894435B2 (en) * 2002-11-06 2005-05-17 Applied Materials, Inc. Method and device for rastering source redundancy
EP1439566B1 (de) 2003-01-17 2019-08-28 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Ladungsteilchenstrahlgerät und Verfahren zu dessen Betrieb
KR100935934B1 (ko) * 2003-03-15 2010-01-11 삼성전자주식회사 전자빔 리소그라피 시스템의 에미터 및 그 제조방법
JP4443167B2 (ja) * 2003-08-25 2010-03-31 株式会社日立製作所 走査型電子顕微鏡
US7928404B2 (en) * 2003-10-07 2011-04-19 Multibeam Corporation Variable-ratio double-deflection beam blanker
US7435956B2 (en) * 2004-09-10 2008-10-14 Multibeam Systems, Inc. Apparatus and method for inspection and testing of flat panel display substrates
US7227142B2 (en) * 2004-09-10 2007-06-05 Multibeam Systems, Inc. Dual detector optics for simultaneous collection of secondary and backscattered electrons
US7319335B2 (en) * 2004-02-12 2008-01-15 Applied Materials, Inc. Configurable prober for TFT LCD array testing
US20060038554A1 (en) * 2004-02-12 2006-02-23 Applied Materials, Inc. Electron beam test system stage
US7355418B2 (en) * 2004-02-12 2008-04-08 Applied Materials, Inc. Configurable prober for TFT LCD array test
US6833717B1 (en) * 2004-02-12 2004-12-21 Applied Materials, Inc. Electron beam test system with integrated substrate transfer module
US7285779B2 (en) 2004-06-21 2007-10-23 Applied Materials Israel, Ltd. Methods of scanning an object that includes multiple regions of interest using an array of scanning beams
US7256606B2 (en) * 2004-08-03 2007-08-14 Applied Materials, Inc. Method for testing pixels for LCD TFT displays
US7456402B2 (en) * 2004-09-10 2008-11-25 Multibeam Systems, Inc. Detector optics for multiple electron beam test system
US7425713B2 (en) * 2005-01-14 2008-09-16 Arradiance, Inc. Synchronous raster scanning lithographic system
US7535238B2 (en) * 2005-04-29 2009-05-19 Applied Materials, Inc. In-line electron beam test system
JP4675697B2 (ja) * 2005-07-06 2011-04-27 株式会社東芝 マスクパターン検査方法、露光条件検証方法、および半導体装置の製造方法
KR101011242B1 (ko) * 2005-07-30 2011-01-26 전자빔기술센터 주식회사 마이크로칼럼을 이용한 미세 패턴 및 형상 검사장치
US7733100B2 (en) 2005-08-26 2010-06-08 Dcg Systems, Inc. System and method for modulation mapping
US20090050802A1 (en) 2006-01-25 2009-02-26 Ebara Corporation Method and apparatus for inspecting sample surface
US7786742B2 (en) * 2006-05-31 2010-08-31 Applied Materials, Inc. Prober for electronic device testing on large area substrates
US7602199B2 (en) * 2006-05-31 2009-10-13 Applied Materials, Inc. Mini-prober for TFT-LCD testing
JP5175577B2 (ja) * 2008-02-18 2013-04-03 株式会社日立ハイテクノロジーズ 集積回路パターンの欠陥検査方法、及びその装置
SG166089A1 (en) * 2009-05-01 2010-11-29 Dcg Systems Inc Systems and method for laser voltage imaging state mapping
DE102013014976A1 (de) 2013-09-09 2015-03-12 Carl Zeiss Microscopy Gmbh Teilchenoptisches System
US9797938B2 (en) * 2014-03-28 2017-10-24 International Business Machines Corporation Noise modulation for on-chip noise measurement
US10088456B2 (en) * 2014-03-31 2018-10-02 Texas Instruments Incorporated Scanning acoustic microscopy system and method
US9349564B2 (en) * 2014-07-17 2016-05-24 Fei Company Charged-particle lens that transmits emissions from sample
WO2016032549A1 (en) * 2014-08-31 2016-03-03 Keysight Technologies, Inc. Imaging apparatus having a plurality of movable beam columns, and method of inspecting a plurality of regions of a substrate intended to be substantially identical
JP6604704B2 (ja) * 2014-12-22 2019-11-13 アプライド マテリアルズ インコーポレイテッド 基板の検査装置、基板の検査方法、大面積基板検査装置、及びその操作方法
CN105807144B (zh) * 2014-12-31 2019-01-18 清华大学 静电计
CN105807145B (zh) * 2014-12-31 2019-01-18 清华大学 静电计
KR102032071B1 (ko) * 2015-09-02 2019-10-14 가부시키가이샤 히다치 하이테크놀로지즈 회로 검사 방법 및 시료 검사 장치
US10325753B2 (en) * 2015-09-23 2019-06-18 Kla Tencor Corporation Method and system for focus adjustment of a multi-beam scanning electron microscopy system
TWI701459B (zh) * 2015-09-23 2020-08-11 美商克萊譚克公司 用於多波束掃描式電子顯微系統之聚焦調整之方法及系統
DE102015013698B9 (de) * 2015-10-22 2017-12-21 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops
WO2017086948A1 (en) * 2015-11-18 2017-05-26 Intel Corporation High power terahertz impulse for fault isolation
US9852880B2 (en) * 2016-04-20 2017-12-26 Applied Materials Israel Ltd. Detection module, inspection system and a method for obtaining multiple sensing results
US10347460B2 (en) 2017-03-01 2019-07-09 Dongfang Jingyuan Electron Limited Patterned substrate imaging using multiple electron beams
US10962623B1 (en) 2017-05-17 2021-03-30 Heathkit Company, Inc. Accurate and model-based measurement and management systems and methods
DE102017209254A1 (de) * 2017-05-31 2018-12-06 Feinmetall Gmbh Kontaktkopf für eine elektrische Prüfeinrichtung, Prüfeinrichtung
CN110945365A (zh) * 2017-06-16 2020-03-31 特克特朗尼克公司 与增强现实相关联的测试和测量设备、系统和方法
JP7119310B2 (ja) * 2017-08-31 2022-08-17 富士電機株式会社 半導体試験装置
US10403471B2 (en) * 2017-11-29 2019-09-03 Asml Netherlands B.V. Systems and methods for charged particle beam modulation
US10578679B2 (en) * 2018-06-18 2020-03-03 Allegro Microsystems, Llc Magnetic field sensors having virtual signals
US10598739B2 (en) * 2018-06-18 2020-03-24 Allegro Microsystems, Llc Magnetic field sensors having virtual signals
US10908229B2 (en) 2018-06-18 2021-02-02 Allegro Microsystems, Llc Regulation of coefficients used in magnetic field sensor virtual signal generation
US10866118B2 (en) 2018-06-18 2020-12-15 Allegro Microsystems, Llc High resolution magnetic field sensors
US10955369B2 (en) * 2018-11-12 2021-03-23 Samsung Electronics Co., Ltd. Mask inspection apparatuses and methods, and methods of fabricating masks including mask inspection methods
US11762043B2 (en) 2021-03-11 2023-09-19 Allegro Microsystems, Llc High resolution magnetic field sensors
CN114152637B (zh) * 2022-02-07 2022-04-26 东莞市志橙半导体材料有限公司 一种硬质碳化硅材料打孔检测装置与方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5325632B2 (de) * 1973-03-22 1978-07-27
FR2220871B1 (de) * 1973-07-27 1978-01-20 Jeol Ltd
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
US3935500A (en) * 1974-12-09 1976-01-27 Texas Instruments Incorporated Flat CRT system
JPS5910688Y2 (ja) * 1977-09-14 1984-04-03 富士通株式会社 電子検出器
DD158726A3 (de) * 1980-07-01 1983-02-02 Georg Kuschel Elektrostatisches ablenksystem
JPS5772072A (en) * 1980-10-24 1982-05-06 Fujitsu Ltd Voltage measuring device
JPS57126056A (en) * 1981-01-29 1982-08-05 Akashi Seisakusho Co Ltd Scanning-type electronic microscope which can display plural sample images simultaneously, and device similar to it
JPS596537A (ja) * 1982-07-05 1984-01-13 Hitachi Ltd 欠陥検査装置
JPS5916255A (ja) * 1982-07-19 1984-01-27 Nippon Telegr & Teleph Corp <Ntt> 電子銃
US4498952A (en) * 1982-09-17 1985-02-12 Condesin, Inc. Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns
US4663559A (en) * 1982-09-17 1987-05-05 Christensen Alton O Field emission device
JPS60175352A (ja) * 1984-01-30 1985-09-09 Nippon Telegr & Teleph Corp <Ntt> 複数電子ビ−ム銃
JPS6142130A (ja) * 1984-08-06 1986-02-28 Nippon Telegr & Teleph Corp <Ntt> 電子ビ−ム露光装置
JPS6142129A (ja) * 1984-08-06 1986-02-28 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPS6142132A (ja) * 1984-08-06 1986-02-28 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPS62147725A (ja) * 1985-12-23 1987-07-01 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPS63269446A (ja) * 1987-04-28 1988-11-07 Canon Inc 電子ビーム装置
JPS63269445A (ja) * 1987-04-28 1988-11-07 Canon Inc 電子ビーム発生素子
JPH0752708B2 (ja) * 1987-04-28 1995-06-05 キヤノン株式会社 荷電ビ−ム装置
DE3851083T2 (de) * 1987-04-28 1995-01-12 Canon Kk Musteraufzeichnungsgerät mit Mehrfach-Elektronenstrahl.
US4897552A (en) * 1987-04-28 1990-01-30 Canon Kabushiki Kaisha Multi-electron-beam pattern drawing apparatus
JPH0752709B2 (ja) * 1987-04-28 1995-06-05 キヤノン株式会社 荷電ビ−ム装置
JPS6482445A (en) * 1987-09-25 1989-03-28 Hitachi Ltd Charged particle detector
US4902898A (en) * 1988-04-26 1990-02-20 Microelectronics Center Of North Carolina Wand optics column and associated array wand and charged particle source
CA1317035C (en) * 1989-01-25 1993-04-27 Matthias Brunner Method for examining a specimen in a particle beam instrument
DE69017095T2 (de) * 1989-05-19 1995-06-14 Fujitsu Ltd Anordnung von Strahlaustastungsblenden, Verfahren zur Herstellung derselben, Gerät und Verfahren zur Belichtung von mit einem Strahl geladenen Teilchen.
US4983830A (en) * 1989-06-29 1991-01-08 Seiko Instruments Inc. Focused ion beam apparatus having charged particle energy filter
JPH0395829A (ja) * 1989-09-08 1991-04-22 Fujitsu Ltd 微小冷陰極の製造方法
DE3938660A1 (de) * 1989-11-21 1991-05-23 Integrated Circuit Testing Korpuskularstrahlgeraet
US5173634A (en) * 1990-11-30 1992-12-22 Motorola, Inc. Current regulated field-emission device
US5122663A (en) * 1991-07-24 1992-06-16 International Business Machine Corporation Compact, integrated electron beam imaging system

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Publication number Publication date
US5430292A (en) 1995-07-04
EP0518633B1 (de) 1997-11-12
EP0518633A1 (de) 1992-12-16
DE69223088D1 (de) 1997-12-18

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