TW200733419A - Light emitting diode bonded with metal diffusion and manufacturing method thereof - Google Patents

Light emitting diode bonded with metal diffusion and manufacturing method thereof

Info

Publication number
TW200733419A
TW200733419A TW095106027A TW95106027A TW200733419A TW 200733419 A TW200733419 A TW 200733419A TW 095106027 A TW095106027 A TW 095106027A TW 95106027 A TW95106027 A TW 95106027A TW 200733419 A TW200733419 A TW 200733419A
Authority
TW
Taiwan
Prior art keywords
metal diffusion
semiconductor
alingap
wafer
manufacturing
Prior art date
Application number
TW095106027A
Other languages
English (en)
Other versions
TWI288979B (en
Inventor
Ying-Che Song
James Wang
yi-xiong Chen
shi-yu Qiu
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Priority to TW095106027A priority Critical patent/TWI288979B/zh
Priority to US11/636,557 priority patent/US7704770B2/en
Priority to JP2006354961A priority patent/JP2007227895A/ja
Priority to KR1020070017416A priority patent/KR100912448B1/ko
Publication of TW200733419A publication Critical patent/TW200733419A/zh
Application granted granted Critical
Publication of TWI288979B publication Critical patent/TWI288979B/zh
Priority to US12/385,906 priority patent/US7781755B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
TW095106027A 2006-02-23 2006-02-23 Light emitting diode bonded with metal diffusion and manufacturing method thereof TWI288979B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW095106027A TWI288979B (en) 2006-02-23 2006-02-23 Light emitting diode bonded with metal diffusion and manufacturing method thereof
US11/636,557 US7704770B2 (en) 2006-02-23 2006-12-11 Light emitting diode by use of metal diffusion bonding technology and method of producing light emitting diode
JP2006354961A JP2007227895A (ja) 2006-02-23 2006-12-28 金属拡散接合による発光ダイオード及びその製造法
KR1020070017416A KR100912448B1 (ko) 2006-02-23 2007-02-21 금속 확산 본딩 기술을 이용하여 제조된 발광 다이오드 및이러한 발광 다이오드의 제조 방법
US12/385,906 US7781755B2 (en) 2006-02-23 2009-04-23 Light emitting diode by use of metal diffusion bonding technology and method of producing such light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095106027A TWI288979B (en) 2006-02-23 2006-02-23 Light emitting diode bonded with metal diffusion and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200733419A true TW200733419A (en) 2007-09-01
TWI288979B TWI288979B (en) 2007-10-21

Family

ID=38427290

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095106027A TWI288979B (en) 2006-02-23 2006-02-23 Light emitting diode bonded with metal diffusion and manufacturing method thereof

Country Status (4)

Country Link
US (2) US7704770B2 (zh)
JP (1) JP2007227895A (zh)
KR (1) KR100912448B1 (zh)
TW (1) TWI288979B (zh)

Cited By (2)

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CN103400920A (zh) * 2009-12-09 2013-11-20 Lg伊诺特有限公司 发光器件、发光器件制造方法、发光器件封装和照明系统
US10074772B2 (en) 2012-01-10 2018-09-11 Lumileds Llc Controlled LED light output by selective area roughening

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TWI479689B (zh) 2009-04-16 2015-04-01 Nat Univ Chung Hsing Double - sided Coarse Vertical Guided Light Emitting Diodes and Their Making Methods
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KR101114047B1 (ko) * 2009-10-22 2012-03-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
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JP4996706B2 (ja) 2010-03-03 2012-08-08 株式会社東芝 半導体発光素子およびその製造方法
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CN101807648B (zh) * 2010-03-19 2012-12-26 厦门市三安光电科技有限公司 引入式粗化氮极性面氮化镓基发光二极管及其制作方法
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HK1144647A2 (en) * 2010-10-21 2011-02-25 Wong Chuen Room A & B A convertible universal platform for light emitting diodes with super heat-conducting tubes
CN102032539B (zh) * 2010-10-28 2012-11-21 映瑞光电科技(上海)有限公司 照明电路
US8154034B1 (en) 2010-11-23 2012-04-10 Invenlux Limited Method for fabricating vertical light emitting devices and substrate assembly for the same
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US8890113B2 (en) * 2011-06-08 2014-11-18 Nikolay Ledentsov Optoelectronic device with a wide bandgap and method of making same
JP2013026451A (ja) 2011-07-21 2013-02-04 Stanley Electric Co Ltd 半導体発光素子
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
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US9252375B2 (en) 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
KR102075988B1 (ko) 2013-09-25 2020-03-02 삼성전자주식회사 반도체 발광소자 제조방법
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JP6608352B2 (ja) * 2016-12-20 2019-11-20 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
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JP2019114650A (ja) * 2017-12-22 2019-07-11 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
KR102608987B1 (ko) * 2018-09-07 2023-12-05 삼성디스플레이 주식회사 발광 소자, 그의 제조 방법, 및 발광 소자를 구비한 표시 장치
CN111200042A (zh) * 2018-11-19 2020-05-26 山东浪潮华光光电子股份有限公司 一种AlGaInP四元LED芯片制备方法
CN109768137B (zh) * 2018-12-29 2022-06-14 晶能光电（江西）有限公司 垂直结构led芯片及其制备方法
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CN111244232B (zh) * 2020-01-26 2021-05-18 江西通利晟电子科技有限公司 Led制备工艺
CN113948615B (zh) * 2020-07-16 2024-06-04 山东浪潮华光光电子股份有限公司 一种易于曝光对位的反极性红外发光二极管的制备方法
CN112909143A (zh) * 2021-02-04 2021-06-04 南昌大学 一种具有特定发光图形的AlGaInP薄膜LED芯片的制备方法
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US9281448B2 (en) 2009-12-09 2016-03-08 Lg Innotek Co., Ltd. Light emitting apparatus
CN103400920B (zh) * 2009-12-09 2017-04-12 Lg伊诺特有限公司 发光器件、发光器件制造方法、发光器件封装和照明系统
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US10074772B2 (en) 2012-01-10 2018-09-11 Lumileds Llc Controlled LED light output by selective area roughening
TWI646703B (zh) * 2012-01-10 2019-01-01 皇家飛利浦電子股份有限公司 由選擇性區域粗糙化控制之發光裝置光輸出

Also Published As

Publication number Publication date
KR20070087502A (ko) 2007-08-28
US7781755B2 (en) 2010-08-24
US20070194325A1 (en) 2007-08-23
KR100912448B1 (ko) 2009-08-14
US20090206362A1 (en) 2009-08-20
JP2007227895A (ja) 2007-09-06
US7704770B2 (en) 2010-04-27
TWI288979B (en) 2007-10-21

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