TW200732844A - Positive photosensitive composition and method of forming pattern using the same - Google Patents

Positive photosensitive composition and method of forming pattern using the same

Info

Publication number
TW200732844A
TW200732844A TW096102480A TW96102480A TW200732844A TW 200732844 A TW200732844 A TW 200732844A TW 096102480 A TW096102480 A TW 096102480A TW 96102480 A TW96102480 A TW 96102480A TW 200732844 A TW200732844 A TW 200732844A
Authority
TW
Taiwan
Prior art keywords
acid
group
photosensitive composition
positive photosensitive
same
Prior art date
Application number
TW096102480A
Other languages
English (en)
Other versions
TWI477909B (zh
Inventor
Hyou Takahashi
Naoya Sugimoto
Kunihiko Kodama
Kei Yamamoto
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW200732844A publication Critical patent/TW200732844A/zh
Application granted granted Critical
Publication of TWI477909B publication Critical patent/TWI477909B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F224/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW096102480A 2006-01-24 2007-01-23 正型感光性組成物及使用它之圖案形成方法 TWI477909B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006015348 2006-01-24
JP2006064476 2006-03-09

Publications (2)

Publication Number Publication Date
TW200732844A true TW200732844A (en) 2007-09-01
TWI477909B TWI477909B (zh) 2015-03-21

Family

ID=37865713

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096102480A TWI477909B (zh) 2006-01-24 2007-01-23 正型感光性組成物及使用它之圖案形成方法

Country Status (5)

Country Link
US (2) US8080361B2 (zh)
EP (1) EP1811341B1 (zh)
JP (1) JP5656819B2 (zh)
KR (1) KR101487274B1 (zh)
TW (1) TWI477909B (zh)

Cited By (1)

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TWI400270B (zh) * 2007-10-19 2013-07-01 Shinetsu Chemical Co 經氫化之由開環置換法所得之聚合物，抗蝕刻劑組成物及形成圖案之方法

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US8088550B2 (en) * 2007-07-30 2012-01-03 Fujifilm Corporation Positive resist composition and pattern forming method
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JP5427447B2 (ja) * 2008-03-28 2014-02-26 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
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TWI587085B (zh) 2012-07-27 2017-06-11 住友化學股份有限公司 光阻組成物及光阻圖案的製造方法
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US9581901B2 (en) * 2013-12-19 2017-02-28 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
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JP6307309B2 (ja) * 2014-03-07 2018-04-04 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、電子デバイスの製造方法及び電子デバイス
US9904171B2 (en) 2015-05-22 2018-02-27 I-Shan Ke Resist pattern hardening material and method of fabricating the same
WO2017122528A1 (ja) * 2016-01-13 2017-07-20 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法及び酸拡散制御剤
JP7249095B2 (ja) * 2016-04-04 2023-03-30 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP7249094B2 (ja) * 2016-04-04 2023-03-30 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400270B (zh) * 2007-10-19 2013-07-01 Shinetsu Chemical Co 經氫化之由開環置換法所得之聚合物，抗蝕刻劑組成物及形成圖案之方法

Also Published As

Publication number Publication date
US9052594B2 (en) 2015-06-09
US20070172761A1 (en) 2007-07-26
TWI477909B (zh) 2015-03-21
EP1811341A1 (en) 2007-07-25
JP2012108527A (ja) 2012-06-07
KR101487274B1 (ko) 2015-01-28
EP1811341B1 (en) 2012-11-07
US20120058431A1 (en) 2012-03-08
US8080361B2 (en) 2011-12-20
JP5656819B2 (ja) 2015-01-21
KR20070077796A (ko) 2007-07-27

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