TW200731549A - Vertical GaN semiconductor device and epitaxial substrate - Google Patents
Vertical GaN semiconductor device and epitaxial substrateInfo
- Publication number
- TW200731549A TW200731549A TW095107327A TW95107327A TW200731549A TW 200731549 A TW200731549 A TW 200731549A TW 095107327 A TW095107327 A TW 095107327A TW 95107327 A TW95107327 A TW 95107327A TW 200731549 A TW200731549 A TW 200731549A
- Authority
- TW
- Taiwan
- Prior art keywords
- gan
- substrate
- semiconductor device
- epitaxial film
- epitaxial substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005061174 | 2005-03-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200731549A true TW200731549A (en) | 2007-08-16 |
Family
ID=36941203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095107327A TW200731549A (en) | 2005-03-04 | 2006-03-03 | Vertical GaN semiconductor device and epitaxial substrate |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7872285B2 (zh) |
| EP (1) | EP1758171A4 (zh) |
| KR (1) | KR20070107572A (zh) |
| CN (1) | CN100555657C (zh) |
| CA (1) | CA2563731A1 (zh) |
| TW (1) | TW200731549A (zh) |
| WO (1) | WO2006093174A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI473265B (zh) * | 2009-10-30 | 2015-02-11 | Alpha & Omega Semiconductor | 帶有改良型終止結構的氮化鎵半導體裝置 |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101971298A (zh) * | 2007-11-02 | 2011-02-09 | 佳能安内华股份有限公司 | 表面处理设备和表面处理方法 |
| JP2009283818A (ja) * | 2008-05-26 | 2009-12-03 | Sanken Electric Co Ltd | 半導体装置およびその製造方法 |
| US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
| US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
| US8791499B1 (en) | 2009-05-27 | 2014-07-29 | Soraa, Inc. | GaN containing optical devices and method with ESD stability |
| US20100314695A1 (en) * | 2009-06-10 | 2010-12-16 | International Rectifier Corporation | Self-aligned vertical group III-V transistor and method for fabricated same |
| US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
| US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
| US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
| KR101368906B1 (ko) * | 2009-09-18 | 2014-02-28 | 소라, 인코포레이티드 | 전력 발광 다이오드 및 전류 밀도 작동 방법 |
| US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
| US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
| US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
| US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
| US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
| JP2012033689A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
| US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
| KR101761309B1 (ko) * | 2011-04-19 | 2017-07-25 | 삼성전자주식회사 | ＧａＮ 박막 구조물, 그의 제조 방법, 및 그를 포함하는 반도체 소자 |
| US8525321B2 (en) * | 2011-07-06 | 2013-09-03 | Fairchild Semiconductor Corporation | Conductive chip disposed on lead semiconductor package |
| US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
| US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
| CN104247052B (zh) | 2012-03-06 | 2017-05-03 | 天空公司 | 具有减少导光效果的低折射率材料层的发光二极管 |
| US8748297B2 (en) | 2012-04-20 | 2014-06-10 | Infineon Technologies Ag | Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill material |
| US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
| US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
| US8802471B1 (en) | 2012-12-21 | 2014-08-12 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
| US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
| JP6019129B2 (ja) | 2013-03-29 | 2016-11-02 | 日本碍子株式会社 | Ｉｉｉ族窒化物基板の処理方法およびエピタキシャル基板の製造方法 |
| US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
| US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
| TWI512971B (zh) * | 2013-09-24 | 2015-12-11 | Richtek Technology Corp | 絕緣閘雙極電晶體及其製造方法 |
| JP5818853B2 (ja) * | 2013-10-15 | 2015-11-18 | 株式会社トクヤマ | ｎ型窒化アルミニウム単結晶基板を用いた縦型窒化物半導体デバイス |
| US9406564B2 (en) | 2013-11-21 | 2016-08-02 | Infineon Technologies Ag | Singulation through a masking structure surrounding expitaxial regions |
| JP2015156479A (ja) * | 2014-01-20 | 2015-08-27 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体デバイス |
| WO2016051973A1 (ja) * | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6994835B2 (ja) * | 2017-03-03 | 2022-01-14 | 株式会社サイオクス | 窒化物半導体基板の製造方法および窒化物半導体基板 |
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| US5294559A (en) | 1990-07-30 | 1994-03-15 | Texas Instruments Incorporated | Method of forming a vertical transistor |
| JP3321189B2 (ja) | 1991-10-04 | 2002-09-03 | 株式会社東芝 | 電力用半導体素子 |
| US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
| DE19723176C1 (de) * | 1997-06-03 | 1998-08-27 | Daimler Benz Ag | Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung |
| US6107649A (en) * | 1998-06-10 | 2000-08-22 | Rutgers, The State University | Field-controlled high-power semiconductor devices |
| US6447604B1 (en) * | 2000-03-13 | 2002-09-10 | Advanced Technology Materials, Inc. | Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices |
| US6396085B1 (en) * | 2000-04-25 | 2002-05-28 | The Furukawa Electric Co., Ltd | GaN-type semiconductor vertical field effect transistor |
| US6580101B2 (en) * | 2000-04-25 | 2003-06-17 | The Furukawa Electric Co., Ltd. | GaN-based compound semiconductor device |
| CN1173411C (zh) * | 2000-11-21 | 2004-10-27 | 松下电器产业株式会社 | 半导体器件及其制造方法 |
| JP4843854B2 (ja) | 2001-03-05 | 2011-12-21 | 住友電気工業株式会社 | Ｍｏｓデバイス |
| JP3826825B2 (ja) | 2001-04-12 | 2006-09-27 | 住友電気工業株式会社 | 窒化ガリウム結晶への酸素ドーピング方法と酸素ドープされたｎ型窒化ガリウム単結晶基板 |
| FR2832547A1 (fr) * | 2001-11-21 | 2003-05-23 | St Microelectronics Sa | Procede de realisation d'une diode schottky sur substrat de carbure de silicium |
| US6768146B2 (en) * | 2001-11-27 | 2004-07-27 | The Furukawa Electric Co., Ltd. | III-V nitride semiconductor device, and protection element and power conversion apparatus using the same |
| JP4224253B2 (ja) | 2002-04-24 | 2009-02-12 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| JP2004047764A (ja) | 2002-07-12 | 2004-02-12 | Hitachi Cable Ltd | 窒化物半導体の製造方法および半導体ウェハならびに半導体デバイス |
| EP3211659A1 (en) | 2002-12-27 | 2017-08-30 | Soraa Inc. | Gallium nitride crystal |
| JP2005033132A (ja) | 2003-07-11 | 2005-02-03 | Sumitomo Electric Ind Ltd | ＧａＮ基板の製造方法 |
| JP2008177335A (ja) * | 2007-01-18 | 2008-07-31 | Fuji Electric Device Technology Co Ltd | 炭化珪素絶縁ゲート型半導体装置。 |
| JP2008263023A (ja) * | 2007-04-11 | 2008-10-30 | Sumitomo Electric Ind Ltd | Ｉｉｉ−ｖ族化合物半導体の製造方法、ショットキーバリアダイオード、発光ダイオード、レーザダイオード、およびそれらの製造方法 |
-
2006
- 2006-03-01 EP EP06714948A patent/EP1758171A4/en not_active Withdrawn
- 2006-03-01 WO PCT/JP2006/303828 patent/WO2006093174A1/ja active Application Filing
- 2006-03-01 CN CNB2006800003484A patent/CN100555657C/zh not_active Expired - Fee Related
- 2006-03-01 US US11/569,798 patent/US7872285B2/en not_active Expired - Fee Related
- 2006-03-01 CA CA002563731A patent/CA2563731A1/en not_active Abandoned
- 2006-03-01 KR KR1020067024390A patent/KR20070107572A/ko not_active Application Discontinuation
- 2006-03-03 TW TW095107327A patent/TW200731549A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI473265B (zh) * | 2009-10-30 | 2015-02-11 | Alpha & Omega Semiconductor | 帶有改良型終止結構的氮化鎵半導體裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070107572A (ko) | 2007-11-07 |
| US20090194796A1 (en) | 2009-08-06 |
| US7872285B2 (en) | 2011-01-18 |
| WO2006093174A1 (ja) | 2006-09-08 |
| CN1969388A (zh) | 2007-05-23 |
| CA2563731A1 (en) | 2006-09-08 |
| EP1758171A1 (en) | 2007-02-28 |
| EP1758171A4 (en) | 2009-04-29 |
| CN100555657C (zh) | 2009-10-28 |
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