TW200729517A - Passive electrically testable acceleration and voltage measurement devices - Google Patents

Passive electrically testable acceleration and voltage measurement devices

Info

Publication number
TW200729517A
TW200729517A TW095136513A TW95136513A TW200729517A TW 200729517 A TW200729517 A TW 200729517A TW 095136513 A TW095136513 A TW 095136513A TW 95136513 A TW95136513 A TW 95136513A TW 200729517 A TW200729517 A TW 200729517A
Authority
TW
Taiwan
Prior art keywords
voltage measurement
measurement devices
acceleration
passive electrically
insulating layer
Prior art date
Application number
TW095136513A
Other languages
English (en)
Chinese (zh)
Inventor
Toshiharu Furukawa
Mark Charles Hakey
Steven John Holmes
David Vaclav Horak
Charles William Koburger Iii
Leah Marie Pfeifer Pastel
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200729517A publication Critical patent/TW200729517A/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/04—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses for indicating maximum value
    • G01P15/06—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses for indicating maximum value using members subjected to a permanent deformation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0891—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values with indication of predetermined acceleration values
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/135—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by making use of contacts which are actuated by a movable inertial mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H35/00—Switches operated by change of a physical condition
    • H01H35/14—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Switches Operated By Changes In Physical Conditions (AREA)
  • Micromachines (AREA)
  • Contacts (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Carbon And Carbon Compounds (AREA)
TW095136513A 2005-10-13 2006-10-02 Passive electrically testable acceleration and voltage measurement devices TW200729517A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/161,181 US7629192B2 (en) 2005-10-13 2005-10-13 Passive electrically testable acceleration and voltage measurement devices

Publications (1)

Publication Number Publication Date
TW200729517A true TW200729517A (en) 2007-08-01

Family

ID=37947379

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136513A TW200729517A (en) 2005-10-13 2006-10-02 Passive electrically testable acceleration and voltage measurement devices

Country Status (4)

Country Link
US (2) US7629192B2 (ja)
JP (2) JP4953722B2 (ja)
CN (1) CN100485951C (ja)
TW (1) TW200729517A (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010199429A (ja) * 2009-02-26 2010-09-09 Fujifilm Corp プラズマエッチング方法及びプラズマエッチング装置並びに液体吐出ヘッドの製造方法
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US8405189B1 (en) * 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
FI20116082L (fi) 2011-11-03 2013-05-04 Marko Pudas Anturi
JP6294083B2 (ja) * 2014-01-09 2018-03-14 セイコーインスツル株式会社 電子機器

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3656352A (en) 1970-12-02 1972-04-18 Nasa Impact monitoring apparatus
US4100807A (en) 1977-06-10 1978-07-18 Engdahl Paul D Peak-recording accelerometer
JPH05101740A (ja) * 1991-10-03 1993-04-23 Polytec Design:Kk マツト型スイツチ
JP3448856B2 (ja) * 1993-12-28 2003-09-22 マツダ株式会社 ロボットハンドの制御装置
US6445006B1 (en) 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
JP3543470B2 (ja) * 1996-02-08 2004-07-14 日産自動車株式会社 マイクロマシンの梁構造及びその製造方法
US5905241A (en) * 1997-05-30 1999-05-18 Hyundai Motor Company Threshold microswitch and a manufacturing method thereof
US6130464A (en) 1997-09-08 2000-10-10 Roxburgh Ltd. Latching microaccelerometer
US6058778A (en) 1997-10-24 2000-05-09 Stmicroelectronics, Inc. Integrated sensor having plurality of released beams for sensing acceleration
JP3421574B2 (ja) * 1998-05-21 2003-06-30 株式会社東芝 半導体装置
PT1082740E (pt) * 1998-06-04 2003-04-30 Cavendish Kinetics Ltd Elementos micro-mecanicos
JP2000155126A (ja) * 1998-11-19 2000-06-06 Toyota Central Res & Dev Lab Inc 加速度センサ
JP2001091441A (ja) * 1999-07-16 2001-04-06 Japan Science & Technology Corp ナノメートルオーダの機械振動子、その製造方法及びそれを用いた測定装置
JP2001208766A (ja) * 2000-01-28 2001-08-03 Toyota Central Res & Dev Lab Inc 加速度検出装置
JP2001337108A (ja) * 2000-05-29 2001-12-07 Tokai Rika Co Ltd 加速度スイッチ
JP3907431B2 (ja) * 2001-06-21 2007-04-18 株式会社デンソー 感圧センサ用抵抗体およびそれを用いた感圧センサ
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
JP4628612B2 (ja) * 2001-09-10 2011-02-09 株式会社ワコー 可変抵抗要素を用いた力検出装置
JP4231228B2 (ja) * 2002-01-21 2009-02-25 株式会社リコー マイクロマシーン
SE0200868D0 (sv) * 2002-03-20 2002-03-20 Chalmers Technology Licensing Theoretical model för a nanorelay and same relay
DE10220194A1 (de) * 2002-05-06 2003-11-27 Infineon Technologies Ag Kontaktierung von Nanoröhren
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
US6912902B2 (en) 2003-03-26 2005-07-05 Honeywell International Inc. Bending beam accelerometer with differential capacitive pickoff
US7199498B2 (en) 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US7280394B2 (en) * 2003-06-09 2007-10-09 Nantero, Inc. Field effect devices having a drain controlled via a nanotube switching element
US20050036905A1 (en) * 2003-08-12 2005-02-17 Matsushita Electric Works, Ltd. Defect controlled nanotube sensor and method of production
JP4593239B2 (ja) * 2003-11-19 2010-12-08 パナソニック株式会社 電気機械フィルタ
JP2005249644A (ja) * 2004-03-05 2005-09-15 Matsushita Electric Ind Co Ltd 圧力センサデバイスおよびそれを用いた回路およびシステム
JP2005259475A (ja) * 2004-03-10 2005-09-22 Jst Mfg Co Ltd 異方導電性シート
JP2005276666A (ja) * 2004-03-25 2005-10-06 Mitsubishi Materials Corp サージアブソーバ

Also Published As

Publication number Publication date
CN1949528A (zh) 2007-04-18
US7898045B2 (en) 2011-03-01
CN100485951C (zh) 2009-05-06
JP2012145582A (ja) 2012-08-02
JP4953722B2 (ja) 2012-06-13
US20070085156A1 (en) 2007-04-19
US20080258246A1 (en) 2008-10-23
JP2007109632A (ja) 2007-04-26
US7629192B2 (en) 2009-12-08
JP5623440B2 (ja) 2014-11-12

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