TW200727374A - Sheet underfiller and manufacturing method of semiconductor device - Google Patents

Sheet underfiller and manufacturing method of semiconductor device

Info

Publication number
TW200727374A
TW200727374A TW095114829A TW95114829A TW200727374A TW 200727374 A TW200727374 A TW 200727374A TW 095114829 A TW095114829 A TW 095114829A TW 95114829 A TW95114829 A TW 95114829A TW 200727374 A TW200727374 A TW 200727374A
Authority
TW
Taiwan
Prior art keywords
underfiller
sheet
manufacturing
semiconductor device
adhesive layer
Prior art date
Application number
TW095114829A
Other languages
English (en)
Other versions
TWI407513B (zh
Inventor
Akinori Sato
Osamu Yamazaki
Kazuhiro Takahashi
Original Assignee
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Publication of TW200727374A publication Critical patent/TW200727374A/zh
Application granted granted Critical
Publication of TWI407513B publication Critical patent/TWI407513B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
    • H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2839—Web or sheet containing structurally defined element or component and having an adhesive outermost layer with release or antistick coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW095114829A 2005-04-27 2006-04-26 片狀填膠材及半導體裝置之製造方法 TWI407513B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005129502 2005-04-27

Publications (2)

Publication Number Publication Date
TW200727374A true TW200727374A (en) 2007-07-16
TWI407513B TWI407513B (zh) 2013-09-01

Family

ID=37307834

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095114829A TWI407513B (zh) 2005-04-27 2006-04-26 片狀填膠材及半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US20090075429A1 (zh)
JP (1) JPWO2006118033A1 (zh)
KR (1) KR20080003002A (zh)
TW (1) TWI407513B (zh)
WO (1) WO2006118033A1 (zh)

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CN102637589A (zh) * 2011-02-15 2012-08-15 日东电工株式会社 半导体装置的制造方法
TWI555144B (zh) * 2012-02-07 2016-10-21 Shinetsu Chemical Co A sealing material layer composite body, a sealed semiconductor element carrying substrate, and a sealing semiconductor element forming a wafer, a semiconductor device, and a semiconductor device manufacturing method

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JP2008288455A (ja) * 2007-05-18 2008-11-27 Hitachi Chem Co Ltd 半導体装置の実装方法及び半導体装置実装品
JP5032231B2 (ja) * 2007-07-23 2012-09-26 リンテック株式会社 半導体装置の製造方法
JP2010199187A (ja) * 2009-02-24 2010-09-09 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置の製造方法
US20110151114A1 (en) * 2009-12-18 2011-06-23 Cooledge Lighting, Inc. Composite patterning device and method for removing elements from host substrate by establishing conformal contact between device and a contact surface
JP5592762B2 (ja) * 2010-11-11 2014-09-17 積水化学工業株式会社 半導体加工用接着シート及び半導体チップの実装方法
CN103415917A (zh) * 2011-02-01 2013-11-27 汉高公司 施加有底部填料膜的预切割的晶片
WO2012106223A2 (en) * 2011-02-01 2012-08-09 Henkel Corporation Pre-cut wafer applied underfill film on dicing tape
TWI430376B (zh) * 2011-02-25 2014-03-11 The Method of Fabrication of Semiconductor Packaging Structure
CN103137501A (zh) * 2011-11-28 2013-06-05 日东电工株式会社 半导体装置的制造方法
JP5965185B2 (ja) * 2012-03-30 2016-08-03 デクセリアルズ株式会社 回路接続材料、及びこれを用いた半導体装置の製造方法
US9202714B2 (en) * 2012-04-24 2015-12-01 Micron Technology, Inc. Methods for forming semiconductor device packages
US8756546B2 (en) 2012-07-25 2014-06-17 International Business Machines Corporation Elastic modulus mapping of a chip carrier in a flip chip package
US8650512B1 (en) 2012-11-15 2014-02-11 International Business Machines Corporation Elastic modulus mapping of an integrated circuit chip in a chip/device package
JP6040737B2 (ja) * 2012-12-05 2016-12-07 住友ベークライト株式会社 接着フィルム、電子部品の製造方法、および電子部品
JP6175515B2 (ja) * 2013-01-23 2017-08-02 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング アンダーフィル組成物およびそれを使用したパッケージング工程
JP5976573B2 (ja) * 2013-03-13 2016-08-23 日東電工株式会社 補強シート及び二次実装半導体装置の製造方法
FR3003688B1 (fr) * 2013-03-22 2016-07-01 Commissariat Energie Atomique Procede d'assemblage flip chip comportant le pre-enrobage d'elements d'interconnexion
JP6157890B2 (ja) * 2013-03-26 2017-07-05 日東電工株式会社 アンダーフィル材、封止シート及び半導体装置の製造方法
JP6131115B2 (ja) * 2013-06-13 2017-05-17 パナック株式会社 固体高分子型燃料電池シール材用の樹脂組成物、該樹脂組成物を用いた固体高分子型燃料電池用のシール材、及び該シール材を用いた固体高分子型燃料電池
CN105453240B (zh) * 2013-08-02 2018-05-01 阿尔发装配解决方案有限公司 用于封装的双面加强焊剂
US20150064851A1 (en) * 2013-09-03 2015-03-05 Rohm And Haas Electronic Materials Llc Pre-applied underfill
JP5761294B2 (ja) * 2013-10-03 2015-08-12 日立化成株式会社 回路部材接続用接着シート及び半導体装置
JP6347657B2 (ja) * 2014-04-22 2018-06-27 デクセリアルズ株式会社 保護テープ、及びこれを用いた半導体装置の製造方法
US10126153B2 (en) * 2014-07-22 2018-11-13 Deere & Company Particulate matter impact sensor
JP6599134B2 (ja) 2015-06-04 2019-10-30 デクセリアルズ株式会社 保護テープ、及びこれを用いた半導体装置の製造方法
TWI671831B (zh) * 2015-09-30 2019-09-11 日商富士軟片股份有限公司 半導體元件的製造方法
JP6721963B2 (ja) * 2015-10-28 2020-07-15 日東電工株式会社 バンプ根元補強用シート
US20180320029A1 (en) * 2015-11-04 2018-11-08 Lintec Corporation Curable resin film and first protective film forming sheet
JP7382708B2 (ja) * 2018-06-29 2023-11-17 リンテック株式会社 実装方法
US10729067B2 (en) 2018-10-20 2020-08-04 Deere & Company Biomass impact sensor having a conformal encasement enveloping a pressure sensitive film
CN112967985B (zh) * 2020-09-28 2022-04-19 重庆康佳光电技术研究院有限公司 转移结构及其制作方法、芯片转移方法、显示面板及装置

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FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
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JP5017861B2 (ja) * 2003-06-06 2012-09-05 日立化成工業株式会社 接着シート、及びダイシングテープ一体型接着シート
TWI304835B (en) * 2003-06-10 2009-01-01 Hitachi Chemical Co Ltd Film adhesive and manufacturing method thereof,adhesive sheet and semiconductor device
JP4170839B2 (ja) * 2003-07-11 2008-10-22 日東電工株式会社 積層シート
JP2005064239A (ja) * 2003-08-12 2005-03-10 Lintec Corp 半導体装置の製造方法
JP4168887B2 (ja) * 2003-09-18 2008-10-22 日立化成工業株式会社 半導体装置の製造方法
JP4417122B2 (ja) * 2004-01-21 2010-02-17 日東電工株式会社 シート状半導体封止用樹脂組成物
KR100696287B1 (ko) * 2004-01-28 2007-03-19 미쓰이 가가쿠 가부시키가이샤 반도체 웨이퍼의 보호방법
JP2006261529A (ja) * 2005-03-18 2006-09-28 Lintec Corp フリップチップ実装用アンダーフィルテープおよび半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102637589A (zh) * 2011-02-15 2012-08-15 日东电工株式会社 半导体装置的制造方法
CN102637589B (zh) * 2011-02-15 2015-03-04 日东电工株式会社 半导体装置的制造方法
TWI555144B (zh) * 2012-02-07 2016-10-21 Shinetsu Chemical Co A sealing material layer composite body, a sealed semiconductor element carrying substrate, and a sealing semiconductor element forming a wafer, a semiconductor device, and a semiconductor device manufacturing method

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KR20080003002A (ko) 2008-01-04
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TWI407513B (zh) 2013-09-01

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