1309882 九、發明說明： 【發明所屬之技術領域】 應薄形化的半 造方法。 本發明是有關於一種高放熱效果且對 導體裝置、半導體裝置的放熱構造以及复制 【先前技術】 m 習知以來，有數個關 的放熱構造被提案出來。 於破封《在基板上之半導體元件 其中之一提案是如圖9所示，提出一種 體元件1被覆晶封裝的基板2上，使用二 (dispensed ^ 使從+導體讀1產生的熱料到高熱傳導性樹脂3 放熱。（例如，參考日本特許文件特開平丨㈣職號公 外近年來’為了達到零件積集度的提升 的輕薄短小化，雜訊降低等之電性特性的提升等 ^ 圖K)所示之將電子零件4喊在基板5 _構 t 於此構，的放熱性問題，則是幾乎沒有被考慮。疋對 但疋，在日本特許文件特開平10-125834號公報所描 因為高熱傳導性樹脂被形成 = 體元件的上㈣及基板的上面，故在實際上，會由 製Γ而=之％境的溫度變化，因熱膨脹係數不同所造成 的變形差0在基板與高熱傳導1309882 IX. Description of the invention: [Technical field to which the invention pertains] A semi-finished method that should be thinned. The present invention relates to a highly exothermic effect and to a heat releasing structure and replication of a conductor device and a semiconductor device. [Prior Art] Since the prior art, several heat-releasing structures have been proposed. One of the proposals for the semiconductor element on the substrate is as shown in FIG. 9. It is proposed that a body element 1 is coated on the substrate 2, and two (dispensed ^ is used to read the heat generated from the + conductor to The high-heat-conducting resin 3 is exothermic. (For example, refer to the Japanese franchise document, special Kaikai (4), in recent years, in recent years, in order to achieve the improvement of the accuracy of the increase in the degree of assembly, the improvement of the electrical characteristics such as the reduction of noise, etc. ^ Fig. K) shows that the problem of the exothermicity of the electronic component 4 shouting on the substrate 5 is not considered. It is described that because the high thermal conductivity resin is formed on the upper part of the body element (four) and the upper surface of the substrate, in practice, the temperature change of the environment due to the Γ Γ = , , , , , 因 因 因 在 在 在 在 在 在 在High heat conduction
件與高熱料性翻旨之間發生。 U㈣I 如囝所示，此變形差產生的應力集中部上，有可能 1309882 起樹脂斷裂或是材料間的剝離。最後，由於 水为或塵埃會侵人轉體元件的電 專’ 象，可能會產生電性不良的情況。 ❿引起腐钱等現 此^如圖1()所示，在將電子零件内藏於 &中’因錢電子零件產生軸會難 =Between the piece and the high-heating material. U(4)I As shown in Fig. ,, on the stress concentration portion due to the difference in deformation, there may be 1309882 resin breakage or peeling between materials. Finally, due to the fact that water or dust can invade the electrical components of the rotating components, electrical defects may occur. ❿ 腐 腐 等 此 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^
大，進而有影響電⑽性之虞。 〜、故熱阻W 換句話說，因為高熱傳導性樹脂被形成以覆蓋連接板 導體元件的上面以及基板的上面，故在製造過程中之熱處 理製程或在實際做為製品而使用之環境的溫度變化等，而 使高熱傳導性樹脂變形時，半導體裝置與基板之熱膨脹係 數不同的情形下，在與半導體裝置之界介面以及與基板之 界面處，會有可能因高熱傳導性樹脂變形而產生差異。高 熱傳導性樹脂便有可能從半導體裝置或基板剝離，而有可 能無法進行足夠的放熱。 【發明内容】 因此，本發明之目的係提出一種半導體裝置、半導體 裝置的放熱構造以及其製造方法，其可以獲得高放熱效果 且對應薄型化。 本發明之另一目的本發明係提出一種半導體裝置、半 導體裝置的放熱構造以及其製造方法，可以進行足夠的放 熱。 為達成上述與其他目的，本發明提出一種半導體裝 置。此半導體裝置包括：半導雜晶片，形成於一基板上； 以及高放射性材料’在基板的上面與半導體晶片的上面， 1309882 彼此獨立地形成。 一言此外，本發明更提出一種半導體裝置之放熱構造。此 半導體裝置之放熱構造包括：半導體裝置，具有第一面以 及與第一面相對的第二面，其中多數個端子被形成於第一 面上·’基板’具有半導體裝置被搭載的第一區域以及包圍 第一區域的第二區域，其中半導體裝置係以第一面與基板 的表面相對之方式，被搭載於基板上；第一放熱膜，形成 於基巧之第二區域上；以及第二放熱膜，形成於半導體裝 置之第二面上，並與第一放熱膜分離。 依據本發明的話，可以提供高放熱效果且對應薄形化 的半導體裝置、半導體裝置的放熱構造以及其製造方法。 為讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。 【實施方式】 接者參考圖式來洋細說明本發明之實施例。此外，在 整個圖式中，相同或相似的構件係給予相同的符號。 第一實施例 圖1至圖4為說明本發明第—實施例之半導體裝置的 剖面圖。 在本發明第-實施例的半導體裝置中，如圖i所示， 電性配線電路與電極8被形成單片化半導體元件6上，形 成聚醯亞胺樹脂等之保護膜7、從電極8拉_重配線/ 以及保護保護膜7與重配線9的密封樹脂1〇。 再者’半導體元件6包括可與外部連接的外部連接端 1309882 子連接到基板12。 立地形成於半導體元件放射性材料13彼此獨 12a。高放射性材料丨3的材;可表面部分 置=法。 level chip size package，^ ㈣上，並電性地連接)4之+導體元件6搭载於基 30〜200# m左右 在本貫施财，藉由將餘_£材料供給到 兀件6之上部表面6a與基板12之上部表面12&，形成言 放射材料13。液狀的陶兗材料因為粒子顆粒細、黏性少同 故使用喷灑H等也可以形成薄料勻的高放射材料。供給 後，進行熱硬化使不會產生剝離等。 如上所此，如圖3所示，在本實施例中，藉由將高放 射性材料13供給給每個熱膨脹係數相異的部分，即使在溫 度變化的某些環境下，產生應力集中而導致斷裂的可能 會降低。 再者，如圖4所示，可以薄型化並且可以確保高放熱 性。 其次，依據本發明的話，因為可以一次處理高放射性 材料13的供給而減少步驟’故而可以達到降低成本的目 1309882 的。 第*一貫施例 接著，說明本發明第二實施例。 圖5為說明本發明第四實施例之半導體裝置 圖。 j w 一如圖5所示，在本實施例中，狹缝14被形成於半導體 兀件之背面與供給到基板表面之高放射性材料上。、 狹缝14,半導體元件6的上部表面6a與基板以之表日面仏 的一部分被曝露出來。 放射溫度變化變大㈣形下’因半導體元件6與高 的差里113、基板12與南放射性材料13的熱膨脹係數 ^差二，會產生變形、應力，但是會被狹縫14緩和。 弟—貝掩i例 接著，說明本發明第三實施例。 圖。圖6為說明本發明第三實_之半導體裝置的剖面 絕緣，電子零件16縣在基板15上，並形成 成:Γ二電子零件16埋起來，在絕_^ H 線圖案18與電子零件19電性連接。 歧做為•衫^成縣樹脂2G ’形核顧案21，並將此 —做為电子零件内藏基板22。 圖案在：反2;之表面上所形成的配線 份μ，選擇二%=材：度的基板表面部 1309882 高放射性材料23係被形忐見士 ^ 度。為太趣#仓丨由八有、力30〜3〇〇以^之厚 不在翻藏的電作錄量“個，但是 板^高之放表^㈣23_雜_成在電子師内藏基 圖宰=二=)?熱傳導的良導體材料所形成的配線 ==的基板上’利用高放射性材料23,得到效 弟四貫施例 接著’說明本發明第四實施例。 圖。圖7為說明本發明第四實施例之半導體裝置的剖面 的表面與背面上均 件傳來的熱可以完 如圖7所示，電子零件内藏基板22 塗上高放射性材料24。藉此，從電子零 全地傳導到高放射性材料24。 第五實施例 接著，說明本發明第五實施例。 圖8為說明本發明第五實施例之半導體裝置的剖面 如圖8所示，在本實施例中，狹縫25被形成於高 性材料上。藉此，電子零件的-部份表面被_出: a在環境溫度變化大的情形下，因電子零件内藏羞 鬲放射性材料之熱膨脹係數的差，產生了 是被狹縫25所缓和。 1309882 第六實施例 圖12為本發明第六實施例半導體裝置之放熱構造的 剖面圖，圖13為平面圖。圖14為顯示本實施例半導體裝 置之放熱構造的熱傳導狀態的剖面圖。圖15為顯示本實施 例半導體裝置之放熱構造的放熱膜之變形的狀態的剖面 圖。圖16為繪示本實施例變化例之半導體裝置放‘熱構造的 剖面圖。 、，如圖12所示，第六實施例之半導體裝置放熱構造包括 半‘體裝置100被搭載的基板2〇〇。與被搭載之半導體裝 置1〇〇電性連接的配線210被設置在基板200之表面201， 藉由此配線，半導體裝置100與搭載於基板2〇〇上的其他 電子零件做電性連接。 此外，如圖25所示，基板2〇〇為包括多數個半導體裝 置100被搭載並與封裝基板等之外部基板2〇〇，連接的外 口P电極150之基板(也稱為插入基板，interp〇ser substrate) 的情开>時，也可以適用本發明。在此情形下，半導體裝置 100並不被直接搭載於搭載基板2〇〇’上，而先被搭載於基 板200。之後’半導體裝置1〇〇被搭載的基板2〇〇經由外 部電極150’與搭載基板2〇〇，連接。在本實施例中，外部 電極150’的材料為焊料，外部電極15〇，係設置在基板 200的背面。 如圖12、13所示，基板200包括半導體裝置100被搭 載的區域220以及包圍此區域的區域230，區域230也就 是從半導體裝置1〇〇暴露出的區域23〇。 1309882 本^2Q()的表面^再 f貝知例中’如圖12所示，半導體裝置UK)包括第2 〇卜其上形成與基板·電性連制多數 :面102，與第一面相對；以及側面⑽。在此，半 置刚也可以是將半導體元件110封裝之物。h體裝 件二悔裝置100使用封裝半導體元 WCSP) 〇 ^ 要者。兄月WCSP，將多數個半導體元件 的，，圓狀態進行樹脂封止，之後再切斷晶 體凡件個個分離的封裝。半導體 ;==:等。近年來’在做為對應小型化要求= 、換句話說，本實施例之半導體裝置100具有電 半導體元件，多數個與此電子電物生 連接之4 120則戦在該表社。再者，雜 =;Γ30係以暴露出電極120之表面的方式，被‘ ^在半導體70件110的表面上。在保護層13〇上，銅 4的配線140從電極120延伸至端子150的搭載位置。此 配線140被编魏線，而將此喊⑽拉回 ::梅150設定在預定位置上。其次，樹脂封止“ 的π身保'^層13G上’以覆盖配線14Q並且暴露出端子150 的格載位置。端子15〇係以突出於樹脂封止層的方式 ，形成’並經由配線140與電才亟12〇電性連接。也就是說 在本實施例中，半導體裝置⑽之第—面1Gi相當於樹脂 1309882 封止層160的表面，而半導體裝置1〇〇之第二面1〇2相者 於半導體元件110之背面。 ^ 半導體裝置100係被載置於基板2〇〇的區域220，使 第一面101面對於基板200的表面201 ,亦即樹脂封止層 160位於半導體元件no與基板2〇〇之表面2〇1之間。 配線210形成於基板2〇〇之表面2〇1上，半導體裴置 1〇〇之端子150與基板200之配線21〇係電性連接。 此外，放熱膜300被形成於半導體裝置1〇〇之第二面 102上以及基板200之區域230上。此放熱膜3〇〇暴露於 空氣等之環境中。 ' 藉此，從半導體裝置1〇〇產生的熱會以圖14之箭碩 170所示的方式，從半導體裝置1〇〇之第二面1〇2經由玫 熱膜300釋放到環境中。也就是說，從半導體裝置1〇〇產 生的熱會從半導體裝置100之第二面1〇2與基板2〇〇之表 面201釋放到環境中。 藉此，半導體裝置100之放熱可以充分地進行，此半 導體裝置之可靠性也可以大幅地提升。 再者，於本實施例中，因為即使在被要求小型化的半 導體裝置中，僅設置薄膜便可以獲得充分的放熱性，故與 在半導體裝置上設置放熱鰭片（fln)等來進行放熱的情形相 比’半導體裝置之厚度可以維持在薄的情形。 此外，如圖5所示’當以雷射或墨等將產品編號等的 標記102設置在半導體裝置1〇〇之第二面1〇2上時，放 熱膜300係以恭露出第二面1〇2被打印上標記之地方的方 1309882 式被形成。藉此，不必進行複雜的製程，也可以 確認標e，故可以降低標記確認的步驟等。 高放if，膜3qq最好具備熱傳導性祕 放射(輕射)性。因為具有熱傳導性，從半導體穿置⑽產 生:放熱膜3。。;因為具有熱放 的熱可以有效率地釋放到週遭環境中。藉此，可以得= 的放熱性。 付到问 再者’放熱膜300最好冰且古奶在 Μ㈣八有巴緣性。因為放熱模具 膜而使半導體展置100内的配線 或基板200上的配線分別電性連接的可能 二以維持半導體裝置HK)之特性。藉此，在設計=二 2可以不必考慮到各配線跨過預定範圍而電性連接的可能 卜故不需要複雜地設計，可以形成放熱膜3〇〇。 此，亦即所得到的熱傳導性、熱放射性以及絕 赦 貝轭例，在放熱膜300，使用以陶瓷為材料之 膜。此種熱放射膜具備將被給予的熱轉換成紅外線 而放射的功能，而具有高放熱性。 更具體的來說’在放熱膜3〇〇 ’使用以石夕化轉之陶 尤為材料之熱放射膜。藉此，可以使放熱性提升。 。，為以陶瓷為材料之熱放射膜可以做到很薄的厚度並 可得到充分的放熱性，即使在被要求薄型化wcsp的 ¥體裝置，也可以充分地對應。 —以陶瓷為材料之熱放射膜的厚度最好是3〇#m以上。 藉此，可以充分地維持對應力等之熱放射膜強度並且可以 1309882 獲得高放熱性。此外，為了_半導财置的薄型化以及 獲得高放熱性，此熱放射膜的厚度最好是2〇〇//m以下。 /、其次，+在本實施例中，如圖12所示，放熱膜3〇〇係被 形成來覆蓋住形成在基板2〇〇之表面2〇1上的配線21〇。 :般而言，配線210因為以金屬構成且熱傳導性高，在本 =體裝置1GG產生的熱容易被傳導，故在此之上形成放熱 膜300，在半導體裝置1〇〇產生的熱可以有效地被釋放。 特別是，配線210以銅(Cu)構成時，因為銅(Cu)的熱傳導 性非常高，故可以更有效率地將熱釋放出。 —其次，在本實施例中，如圖12所示，半導體裝置1〇〇 之第一面102上所形成的放熱膜3〇〇(以下稱放熱膜3〇〇幻 以及在基200之區域230上所形成的放熱膜(以下稱放熱 膜300b)係彼此獨立地且分離地形成。藉此，在本實施例 中，半導體裝置之側面103從放熱膜3〇〇暴露出來。 依據此結構的話’如圖15所示，當因為製造過程的熱 處理製私或貫際做為產品時被使用的環境的溫度變化，而 使放熱膜300發生變形時，即使由於半導體裝置1〇〇與基 板200之熱膨脹係數的差異而在與半導體裝置1〇〇之界面 以及與基板200之界面處發生放熱膜變形有差異時，因為 放熱膜300a與放熱膜300b之間是分離的，變形產生的應 力（圖中的IH虎⑽、180,）彼此互相干涉的情形可以降 低’可以降低變形產生的應力集中於—部分。藉此，在放 熱膜300產生剝離的可能性或者放熱膜3〇〇從半導體裝置 100或基板200剝離之可能性也降低。據此，彳以提高半 1309882 導體裝置100之放熱性’並且可以大幅提高半導體裝置100 的可靠性。 在本實施例中，放熱膜300a與放熱膜300b是以共通 材料構成。藉此，例如以噴灑器（sprayer)等從基板2〇〇上 方供給構成放熱膜300之材料，放熱膜3〇〇a與放熱膜3〇〇b 可以一同處理，製程步驟可以大幅地減少。藉此，可不用 大幅增加成本便可以實施本發明。 此外，當半導體裝置100與基板200之熱膨脹係數有 很大差異時，放熱膜300a與放熱膜300b較佳是使用熱膨 脹係數不同的材料。亦即，放熱膜兕⑽與放熱膜3〇〇b是 使用不同熱膨脹係數，放熱膜300的材料可以分別設定， 以減緩半導體裝置1〇〇與放熱膜3〇〇a之間以及基板2〇〇 與放射膜300b之間所產生的應力。 其次’使熱膨脹係數產生的應力更加降低的情形時， 如圖16所示’較佳是把開口部31〇設置在放熱膜3〇〇。藉 此’因為應力會被開口部310吸收，由應力在放熱膜300 產生的斷裂的可能性可以降低。在本實施例中，開口部31〇 分別設置在放熱膜300a與放熱膜300b。開口部310為多 數個被設置’且各個開口部310以一定的間距配置。藉此， 在放熱膜300產生的應力在該層中可以被更均勻地吸收， 也可以降低應力集中於一部分的可能性，也可以更降低斷 裂的發生。 此外，在前述半導體裝置100的第二面102上配設標 記102’的情形時，藉由將開口部310設置成使標記1〇2， 1309882 暴露出來的方式，可以僅設置開口部310，便達到可以減 低標記確認的步驟以及減缓應力。 第七實施例 接著，以本發明第七實施例來說明前述第六實施例之 半導體裝置之放熱構造的製造方法。圖17至圖21為說明 本發明第七實施例的製程流程圖。 如圖17所示，在本發明第七實施例中，首先準備半導 體製100被搭載的基板200。 接著，如圖18所示，將半導體裝置1〇〇搭載於此基板 200 上。 接著，如圖19與圖20所示，將液體狀的放熱材料3〇1 供給給基板200的表面201與半導體裝置1〇〇的表面1〇2 上，以形成放熱膜300的前聽體3〇〇，。 …、在本實施例+ ’在放熱材料301使用陶莞，並以喷灑 盗等之供給部4〇0將此放熱材料做成霧狀，從基板2〇〇上 方吹付於其上。藉此，在半導體裝置削之表面撤以及 基板200之表面201上形成放熱膜3〇〇之前軀體3〇〇，， 以恭露出半導體裝置1〇〇之側面1〇3。 藉由將放熱材料做成霧狀，因為放熱材料3〇〇〇1之粒 子可以弄得更細來供給，故在半導體裝置⑽與基板2〇〇 上放熱膜3GG之前軀體，可變薄，並且可以均句地提 ’液狀陶莞因為粒子細且黏度小，故適用於此 種供給方法。 此外’藉由利用喷灑器等將放熱材料3〇ι擴散吹付到 1309882 較廣的範圍，可以將放熱材料301 —併供給到半導體裝置 1〇〇及基板200上。因此，不用大幅地增加製程步驟，、便 可以實施本發明。 之後’如圖21所示，藉由加熱前軀體3〇〇’使之硬化， 來形成放熱膜300。在此，放熱膜3〇〇的厚度為3〇〜2〇〇“ m左右。藉由此加熱處理，可以降低放熱膜3〇〇從半導體 裝置100與基板200剝離的可能性。 此外，半導體裝置1〇〇外，電子零件也被搭載於基板 200+上的情形時，包含半導體裝置1〇〇之預定電子零件全 部搭載於基板2GG上後，從基板2GG上方供給放熱材料 3〇1。利用形成放熱膜300覆蓋電子零件，可以一併提升搭 載於基板200上之電子零件的放熱性。亦即，多數個電子 零件所構成之系統的可靠性可以大幅地提升而不必大幅地 增加製程步驟。 第八實施例 ^接著，說明本發明第八實施例之半導體裝置的放熱構 造。圖22為本實施例半導體裝置之放熱構造的剖面圖。圖 23、圖24為本實施例半導體裝置之放熱構造變化例的剖面 圖。 如圖22所不，在第八實施例之半導體装置的放熱構造 中’半導體裝置100被搭載於基板200上。以樹脂等做為 材料之絕緣層55〇被形成於基板上，以覆蓋半導體裝 置 100。 如此’近年來存在將半導體裝置等之電子零件埋入基 1309882 成之樹轉的絕緣層巾之封裝結構。在此種封裝 為半導體裝之電子零件储埋人到樹脂等 從電子零件產生的熱會令人捆擾，而有無法 n ”、、之虞。本實施例的封裝構造即提供一種可以提 升放”，、性之半導體裝置的放熱構造。 在本Λ施例中，基板200具有底基板5⑻與以樹脂等 為材料之絕緣層51Q。電子零件52G被搭載於底基板5〇〇 上，而絕緣層510被形成於底基板5〇〇上以覆蓋電子零件 520。 將半導體裝置100與電子零件52〇電性連接的配線圖 案530被形成在基板200上。與配線圖案53〇電性連接之 導電體540被形成在基板200上。 +以樹脂為材料之絕緣層550被形成在基板2〇〇上，以 覆蓋半導體裝置1〇〇與配線圖案530並且使導電體54〇的 一部分表面被暴露出來。 與導電體54G電性連接，且以銅(Cu)等為材料之配線 圖案530被形成在絕緣層。 放熱膜300係形成於絕緣層550上或是底基板5〇〇的 背面。藉此，電子零件520或半導體裝置1〇〇所產生的熱 會從圖中所示之箭號170，經由絕緣層55〇或基板2〇〇被 傳導到放熱膜300,而釋放到周圍環境中。在此放熱膜3〇〇 係使用具有與第六實施例放熱膜相同之結構。 在本3細*例中’絕緣層550上所形成的放熱膜係 以覆蓋配線圖案560的方式被形成。藉此，電子零件52〇 19 1309882 或半導體裝置100所產生的熱會經由導電體540傳導到配 線圖案560。因為此熱利用設置在配線圖案56〇上的放熱 膜3〇〇而被放熱，故放熱性可以更提高。也就是說，因為 使電子零件520或半導體裝置10〇所產生的熱更有效率地 傳遞到放熱膜300，故放熱性可以更加提高。 此外’如圖23所示，將放熱膜3〇〇形成於整個絕緣層 55〇或底板500的整個背面，可以更提升放熱性。 此外’如圖24所示’在需要減緩因熱膨脹等發生之應 力的情形時，放熱膜300更可以具有開口部31〇。由於以 此開口部310來減緩應力，故利用此架構的話，可以維持 放熱性，並且可以降低在放熱膜3〇()因熱膨脹等產生斷裂 等的可能性。 細上所述，依據本發明的話，可以提供可獲得高放熱 效果且對應薄形化之半導體裝置、半導體裝置的放熱構造 以及其製造方法。 綜上所述，雖然本發明已以較佳實施例揭露如上，然 其並非用以限定本發明，任何熟習此技藝者，在不脫離本 發明之精神和範圍内，當可作各種之更動與潤飾，因此本 發明之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1繪示說明本發明第一實例半導體裝置的剖面圖。 圖2繪不說明本發明第一實例半導體裝置的剖面圖。 圖3繪示說明本發明第一實例半導體裝置的剖面圖。 圖4繪示說明本發明第一實例半導體裝置的刻面圖。 20 1309882 圖5繪示說明本發明第二實例半導體裝置的剖面圖。 圖6繪示說明本發明第三實例半導體裝置的剖面圖。 圖7繪示說明本發明第四實例半導體裝置的剖面圖。 圖8繪示說明本發明第五實例半導體裝置的剖面圖。 圖9繪示說明習知半導體裝置的剖面圖。 圖10繪示說明習知半導體裝置的剖面圖。 圖11繪示說明習知半導體裝置的剖面圖。 圖12繪示說明本發明第六實例半導體裝置之放熱構 造的剖面圖。 圖13繪示說明本發明第六實例半導體裝置之放熱構 造的平面圖。 圖14繪示說明本發明第六實例半導體裝置之放熱構 造之放熱膜的變形狀態。 圖15繪示說明本發明第六實例半導體裝置之放熱構 造之放熱狀態的剖面圖。 圖16繪示說明本發明第六實例半導體裝置之放熱構 造的變化例剖面圖。 圖17繪示說明本發明第七實例半導體裝置之放熱構 造的製造方法的製程流程圖。 圖18繪示說明本發明第七實例半導體裝置之放熱構 造的製造方法的製程流程圖。 圖19繪示說明本發明第七實例半導體裝置之放熱構 1309882 造的製造方法的製程流程圖。 圖20繪示說明本發明第七實例半導體裝置之放熱構 造的製造方法的製程流程圖。 圖21繪示說明本發明第七實例半導體裝置之放熱構 造的製造方法的製程流程圖。 圖22繪示說明本發明第八實例半導體裝置之放熱構 造的剖面圖。 圖23繪示說明本發明第八實例半導體裝置之放熱構 造變化例的剖面圖。 圖24繪示說明本發明第八實例半導體裝置之放熱構 造變化例的剖面圖。 圖25繪示說明本發明第六實例半導體裝置之放熱構 造變化例的剖面圖。 【主要元件符號說明】 1半導體元件 2基板 3南熱傳導性樹脂 4電子零件 5基板 6半導體元件 6a半導體元件之上部表面 7保護膜 8電極 9重配線 10密封樹脂 11外部連接端子 12基板 12a基板的表面部分 13高放射性材料 14狹缝 15基板 16電子零件 22 1309882 17絕緣樹脂 19電子零件 21配線圖案 22a基板表面部份 24尚放射性材料 18配線圖案 20絕緣樹脂 22電子零件内藏基板 23南_放射性材料 25狹缝 100半導體裝置Large, and then have the impact of electricity (10). In other words, since the high thermal conductivity resin is formed to cover the upper surface of the connecting plate conductor element and the upper surface of the substrate, the heat treatment process in the manufacturing process or the temperature of the environment in which it is actually used as a product is used. When the high thermal conductivity resin is deformed and the thermal expansion coefficient of the semiconductor device and the substrate are different, there may be a difference between the interface with the semiconductor device and the interface with the substrate due to deformation of the high thermal conductive resin. . The highly thermally conductive resin may be peeled off from the semiconductor device or the substrate, and there is a possibility that sufficient heat generation may not be performed. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor device, a heat dissipation structure of a semiconductor device, and a method of manufacturing the same, which can achieve a high heat release effect and are correspondingly thinner. Another object of the present invention is to provide a semiconductor device, a heat releasing structure of a semiconductor device, and a method of manufacturing the same, which can perform sufficient heat dissipation. To achieve the above and other objects, the present invention provides a semiconductor device. The semiconductor device includes: a semiconductor wafer formed on a substrate; and a highly radioactive material 'on the upper surface of the substrate and the upper surface of the semiconductor wafer, 1309882 are formed independently of each other. In addition, the present invention further proposes a heat dissipation structure of a semiconductor device. The heat dissipation structure of the semiconductor device includes a semiconductor device having a first surface and a second surface opposite to the first surface, wherein a plurality of terminals are formed on the first surface, and the 'substrate' has a first region on which the semiconductor device is mounted And a second region surrounding the first region, wherein the semiconductor device is mounted on the substrate such that the first surface faces the surface of the substrate; the first heat release film is formed on the second region of the substrate; and the second The heat release film is formed on the second surface of the semiconductor device and separated from the first heat release film. According to the present invention, it is possible to provide a semiconductor device having a high heat radiation effect and corresponding to thinning, a heat releasing structure of the semiconductor device, and a method of manufacturing the same. The above described objects, features, and advantages of the invention will be apparent from the description and appended claims appended claims [Embodiment] An embodiment of the present invention will be described in detail with reference to the drawings. In addition, the same or similar components are given the same symbols throughout the drawings. [First Embodiment] Figs. 1 to 4 are cross-sectional views showing a semiconductor device according to a first embodiment of the present invention. In the semiconductor device of the first embodiment of the present invention, as shown in FIG. 1, the electrical wiring circuit and the electrode 8 are formed on the singulated semiconductor element 6, and the protective film 7 of the polyimide film or the like is formed, and the electrode 8 is formed. The pull-rewiring/protective film 7 and the sealing resin 1〇 of the rewiring 9 are provided. Further, the semiconductor element 6 includes an external connection terminal 1309882 connectable to the outside to the substrate 12. The radioactive material 13 formed on the semiconductor element is formed independently of each other. Highly radioactive material 丨3 material; surface part setting = method. Level chip size package, ^ (4), and electrically connected) 4 + conductor element 6 is mounted on the base 30 ~ 200 # m in the past, through the supply of the remaining material to the upper part of the element 6 The surface 6a and the upper surface 12& of the substrate 12 form a radiation material 13. The liquid ceramic material can form a thin, uniform, high-radiation material by spraying H or the like because the particles are fine and sticky. After the supply, the heat is hardened so that peeling or the like does not occur. As described above, as shown in Fig. 3, in the present embodiment, by supplying the highly radioactive material 13 to each portion having a different coefficient of thermal expansion, even in some environments where the temperature changes, stress concentration occurs to cause breakage. May be reduced. Further, as shown in Fig. 4, it can be made thinner and can ensure high heat release. Secondly, according to the present invention, since the step of reducing the supply of the high-radioactive material 13 can be performed at one time, it is possible to achieve the cost reduction of 1309882. *Consistent Example Next, a second embodiment of the present invention will be described. Fig. 5 is a view showing a semiconductor device according to a fourth embodiment of the present invention. j w As shown in Fig. 5, in the present embodiment, the slit 14 is formed on the back surface of the semiconductor element and on the highly radioactive material supplied to the surface of the substrate. The slit 14 is exposed to a portion of the upper surface 6a of the semiconductor element 6 and the surface of the substrate. The change in the radiation temperature becomes large (four). The difference between the semiconductor element 6 and the high difference 113, the thermal expansion coefficient of the substrate 12 and the south radioactive material 13 is two, and deformation and stress are generated, but the slit 14 is alleviated.弟 - 贝贝 I Example Next, a third embodiment of the present invention will be described. Figure. 6 is a cross-sectional view showing the semiconductor device of the third embodiment of the present invention. The electronic component 16 is formed on the substrate 15 and is formed such that the second electronic component 16 is buried, and the pattern 18 and the electronic component 19 are formed. Electrical connection. As the electronic component built-in substrate 22, it is made into a 2G ‘shaped core case 21 of the shoji. The pattern is on the surface of the surface of the reverse: 2, and the surface area of the substrate is selected to be 2% = material: 1309882 The high-radiation material 23 is shaped like a smear. It is too interesting. #仓丨由八有,力30~3〇〇的^ The thickness of the ^ is not hidden in the electricity record ", but the board ^ high of the table ^ (four) 23_ miscellaneous _ into the electronics division Figure 7 = 2 =)? The wiring formed by the good conductor material of heat conduction == on the substrate 'Using the high-radioactive material 23, the effect is obtained four times. Next, the fourth embodiment of the present invention will be described. Fig. 7 is It is to be noted that the heat transmitted from the surface of the cross section of the semiconductor device according to the fourth embodiment of the present invention and the heat transfer on the back surface can be as shown in Fig. 7. The electronic component built-in substrate 22 is coated with a highly radioactive material 24. Thereby, from the electron zero The whole embodiment is conducted to the high-radioactive material 24. Fifth Embodiment Next, a fifth embodiment of the present invention will be described. Fig. 8 is a cross-sectional view showing a semiconductor device according to a fifth embodiment of the present invention, as shown in Fig. 8, in the present embodiment, The slit 25 is formed on the high-strength material, whereby the surface of the electronic component is _ out: a in the case where the ambient temperature changes greatly, due to the difference in thermal expansion coefficient of the shy radioactive material contained in the electronic component, The result is that it is alleviated by the slit 25. 1309882 The sixth embodiment is shown in Fig. 12 Fig. 13 is a cross-sectional view showing a heat conduction state of the heat radiation structure of the semiconductor device of the present embodiment, and Fig. 15 is a view showing heat release of the semiconductor device of the present embodiment. FIG. 16 is a cross-sectional view showing a heat-dissipating structure of a semiconductor device according to a modification of the embodiment. FIG. 12 is a heat-releasing structure of the semiconductor device of the sixth embodiment. A substrate 2 on which the semiconductor device 100 is mounted is provided. A wiring 210 electrically connected to the mounted semiconductor device 1 is provided on the surface 201 of the substrate 200, whereby the semiconductor device 100 and the substrate are mounted thereon. In addition, as shown in FIG. 25, the substrate 2 is an external port including a plurality of semiconductor devices 100 mounted on an external substrate 2 such as a package substrate. The present invention can also be applied to the substrate of the P electrode 150 (also referred to as an interposer substrate). In this case, the semiconductor device 100 is not The substrate 2 is mounted on the substrate 2 and mounted on the substrate 200. The substrate 2 mounted on the semiconductor device 1 is connected to the mounting substrate 2 via the external electrode 150'. In the example, the material of the external electrode 150' is solder, and the external electrode 15' is provided on the back surface of the substrate 200. As shown in Figs. 12 and 13, the substrate 200 includes a region 220 on which the semiconductor device 100 is mounted and an area surrounding the region. 230, the region 230 is the region 23〇 exposed from the semiconductor device 1130. 1309882 The surface of the ^2Q() is further described as 'as shown in FIG. 12, the semiconductor device UK' includes the second 〇b A plurality of substrates are electrically formed thereon: a surface 102 opposite to the first surface; and a side surface (10). Here, the half-mount can also be a package in which the semiconductor element 110 is packaged. h body device two repentance device 100 uses packaged semiconductor element WCSP) 〇 ^ Important. Brother WCSP, resin-sealed most of the semiconductor components, and then cut off the crystals in separate packages. Semiconductor ;==:etc. In recent years, the semiconductor device 100 of the present embodiment has an electric semiconductor element, and in other words, a plurality of semiconductors connected to the electronic device are connected to the watch. Further, =30 is ‘ on the surface of the semiconductor 70 member 110 in such a manner as to expose the surface of the electrode 120. On the protective layer 13A, the wiring 140 of the copper 4 extends from the electrode 120 to the mounting position of the terminal 150. This wiring 140 is braided, and this call (10) is pulled back to ::Me 150 is set at the predetermined position. Next, the resin seals the "π body protection layer 13G" to cover the wiring 14Q and expose the carrier position of the terminal 150. The terminal 15 is formed to protrude from the resin sealing layer, and is formed via the wiring 140. In this embodiment, the first surface 1Gi of the semiconductor device (10) corresponds to the surface of the sealing layer 160 of the resin 1309882, and the second surface of the semiconductor device 1 is 1〇. The two phases are on the back side of the semiconductor device 110. ^ The semiconductor device 100 is placed on the region 220 of the substrate 2 such that the first surface 101 faces the surface 201 of the substrate 200, that is, the resin sealing layer 160 is located at the semiconductor device. No is formed between the surface 2〇1 of the substrate 2. The wiring 210 is formed on the surface 2〇1 of the substrate 2, and the terminal 150 of the semiconductor device 1 is electrically connected to the wiring 21 of the substrate 200. Further, the heat release film 300 is formed on the second surface 102 of the semiconductor device 1 and on the region 230 of the substrate 200. This heat release film 3 is exposed to the atmosphere of air or the like. The heat generated by 〇 will be as shown in Figure 14 of the arrow 170 The second surface 1 〇 2 of the semiconductor device 1 is released into the environment via the tempering film 300. That is, the heat generated from the semiconductor device 1 从 is from the second side of the semiconductor device 100 〇 2 The surface 201 of the substrate 2 is released into the environment. Thereby, the heat release of the semiconductor device 100 can be sufficiently performed, and the reliability of the semiconductor device can be greatly improved. Furthermore, in this embodiment, because even in the case In a semiconductor device that is required to be miniaturized, sufficient heat dissipation can be obtained by providing only a thin film. Therefore, the thickness of the semiconductor device can be kept thin compared to the case where a heat radiating fin (fln) or the like is provided on the semiconductor device to radiate heat. In addition, as shown in FIG. 5, when the mark 102 such as a product number or the like is disposed on the second surface 1〇2 of the semiconductor device 1 by laser or ink, the heat radiation film 300 is decorated to reveal the second. The surface 1〇2 is formed by the square 1309882 where the mark is printed. This eliminates the need for complicated processes and confirms the mark e. Therefore, the step of marking confirmation can be reduced. High-resolution if, film 3qq preferably has Thermal Conductive Radiation (light-light). Because of its thermal conductivity, it is generated from the semiconductor through (10): the heat release film 3; because the heat with heat release can be efficiently released into the surrounding environment. The exothermicity is paid. The reheating film 300 is preferably iced and the ancient milk is in the Μ (4) 八. The wiring in the semiconductor exhibition 100 or the wiring on the substrate 200 are electrically connected by the exothermic mold film. The second possibility is to maintain the characteristics of the semiconductor device HK). Thereby, in the design = 2 and 2, it is possible to form the heat radiation film 3 without considering the possibility that the wirings are electrically connected across a predetermined range without complicated design. Hey. Thus, that is, the obtained thermal conductivity, thermal radioactivity, and yoke yoke are examples. In the heat release film 300, a ceramic-based film is used. Such a thermal radiation film has a function of converting the applied heat into infrared rays and radiating, and has a high heat release property. More specifically, the thermal radiation film of the ceramic material of the stone-like turn is used in the heat-releasing film 3〇〇. Thereby, the heat release property can be improved. . The thermal radiation film made of ceramics can be made to have a very thin thickness and can obtain sufficient heat dissipation, and can be sufficiently matched even in a body device that is required to be thinner wcsp. - The thickness of the thermal radiation film made of ceramic is preferably 3 〇 #m or more. Thereby, the strength of the thermal radiation film against stress or the like can be sufficiently maintained and high exothermicity can be obtained by 1309882. Further, in order to reduce the thickness of the semiconductor package and to obtain a high heat release property, the thickness of the heat radiation film is preferably 2 Å//m or less. /, Next, + In the present embodiment, as shown in Fig. 12, the heat radiation film 3 is formed to cover the wiring 21A formed on the surface 2?1 of the substrate 2?. In general, since the wiring 210 is made of metal and has high thermal conductivity, heat generated in the body device 1GG is easily conducted, so that the heat radiation film 300 is formed thereon, and heat generated in the semiconductor device 1 can be effectively performed. The ground was released. In particular, when the wiring 210 is made of copper (Cu), since copper (Cu) has a very high thermal conductivity, heat can be released more efficiently. Next, in the present embodiment, as shown in FIG. 12, the heat radiation film 3 形成 formed on the first surface 102 of the semiconductor device 1 (hereinafter referred to as the heat radiation film 3 illusion and the region 230 in the base 200) The heat radiation film (hereinafter referred to as heat radiation film 300b) formed thereon is formed independently and separately from each other. Thereby, in the present embodiment, the side surface 103 of the semiconductor device is exposed from the heat radiation film 3'. According to this structure' As shown in FIG. 15, when the heat radiation film 300 is deformed due to temperature change of the environment used when the heat treatment of the manufacturing process is performed as a product, even due to thermal expansion of the semiconductor device 1 and the substrate 200 When the difference in the coefficient is different from the deformation of the heat radiation film at the interface with the semiconductor device 1 and the interface with the substrate 200, since the heat radiation film 300a and the heat radiation film 300b are separated, the stress generated by the deformation (in the figure) The case where the IH tigers (10), 180,) interfere with each other can reduce the portion of the stress that can be reduced by the deformation. Thus, the possibility of peeling occurs in the heat release film 300 or the heat release film 3 The possibility of peeling off the body device 100 or the substrate 200 is also reduced. Accordingly, the heat dissipation of the conductor device 100 is improved by half, and the reliability of the semiconductor device 100 can be greatly improved. In the present embodiment, the heat radiation film 300a and the heat release film are radiated. The film 300b is made of a common material, whereby the material constituting the heat radiation film 300 is supplied from above the substrate 2〇〇 by, for example, a sprayer, and the heat radiation film 3〇〇a and the heat radiation film 3〇〇b can be processed together. The process steps can be greatly reduced. Thereby, the present invention can be implemented without greatly increasing the cost. Further, when the thermal expansion coefficients of the semiconductor device 100 and the substrate 200 are greatly different, the heat radiation film 300a and the heat radiation film 300b are preferably used. Materials having different thermal expansion coefficients, that is, the exothermic film crucible (10) and the exothermic film 3〇〇b are different thermal expansion coefficients, and the materials of the exothermic film 300 can be separately set to slow down the semiconductor device 1 and the exothermic film 3〇〇a. The stress generated between the substrate 2 and the radiation film 300b. Next, when the stress caused by the thermal expansion coefficient is further lowered, as shown in Fig. 16. It is preferable to dispose the opening portion 31〇 in the heat radiation film 3〇〇. By this, since the stress is absorbed by the opening portion 310, the possibility of breakage caused by the stress on the heat radiation film 300 can be lowered. In this embodiment, The openings 31 are provided in the heat radiation film 300a and the heat radiation film 300b, respectively. The openings 310 are provided in a plurality of positions, and the respective opening portions 310 are arranged at a constant pitch. Thereby, the stress generated in the heat radiation film 300 is in the layer. It can be absorbed more uniformly, and the possibility of stress concentration on a part can be reduced, and the occurrence of cracking can be further reduced. Further, when the mark 102' is disposed on the second surface 102 of the semiconductor device 100, By arranging the opening portion 310 so that the marks 1〇2, 1309882 are exposed, only the opening portion 310 can be provided, and the step of confirming the mark confirmation and the stress relieving can be achieved. Seventh Embodiment Next, a method of manufacturing a heat radiation structure of a semiconductor device according to a sixth embodiment of the present invention will be described with reference to a seventh embodiment of the present invention. 17 to 21 are flowcharts showing the process of the seventh embodiment of the present invention. As shown in Fig. 17, in the seventh embodiment of the present invention, first, the substrate 200 on which the semiconductor system 100 is mounted is prepared. Next, as shown in FIG. 18, the semiconductor device 1 is mounted on the substrate 200. Next, as shown in FIG. 19 and FIG. 20, a liquid exothermic material 3〇1 is supplied to the surface 201 of the substrate 200 and the surface 1〇2 of the semiconductor device 1 to form the front listener 3 of the heat radiation film 300. Oh, In the present embodiment, the ceramic material is used in the heat-dissipating material 301, and the heat-releasing material is sprayed in a supply portion 4〇0 such as a spear, and is blown onto the substrate 2 from above. Thereby, the body 3〇〇 is formed before the surface of the semiconductor device is removed and the heat radiation film 3 is formed on the surface 201 of the substrate 200 to expose the side surface 1〇3 of the semiconductor device 1〇〇. By making the heat-releasing material into a mist shape, since the particles of the heat-releasing material 3〇〇〇1 can be supplied finer, the body can be thinned before the heat-releasing film 3GG is applied to the semiconductor device (10) and the substrate 2〇〇, and It can be said that the liquid-like pottery is suitable for this kind of supply method because the particles are fine and the viscosity is small. Further, the heat releasing material 301 can be supplied to the semiconductor device 1 and the substrate 200 by diffusing and blowing the heat releasing material 3〇 to a wide range of 1309882 by means of a sprinkler or the like. Therefore, the present invention can be implemented without greatly increasing the number of process steps. Thereafter, as shown in Fig. 21, the heat radiation film 300 is formed by heating the front body 3'' to harden it. Here, the thickness of the heat radiation film 3 is about 3 〇 2 〇〇 "m. By this heat treatment, the possibility that the heat radiation film 3 剥离 is peeled off from the semiconductor device 100 and the substrate 200 can be reduced. In the case where the electronic component is mounted on the substrate 200+, all of the predetermined electronic components including the semiconductor device 1 are mounted on the substrate 2GG, and then the heat releasing material 3〇1 is supplied from above the substrate 2GG. The heat radiation film 300 covers the electronic component, and the heat dissipation property of the electronic component mounted on the substrate 200 can be improved together. That is, the reliability of the system composed of a plurality of electronic components can be greatly improved without significantly increasing the number of manufacturing steps. Eight Embodiments Next, a heat dissipation structure of a semiconductor device according to an eighth embodiment of the present invention will be described. Fig. 22 is a cross-sectional view showing a heat dissipation structure of the semiconductor device of the present embodiment. Fig. 23 and Fig. 24 are diagrams showing changes in the heat radiation structure of the semiconductor device of the present embodiment. In the heat dissipation structure of the semiconductor device of the eighth embodiment, the semiconductor device 100 is mounted on the substrate 200. An insulating layer 55 of a material such as a grease is formed on the substrate to cover the semiconductor device 100. Thus, in recent years, there has been a package structure in which an electronic component such as a semiconductor device is buried in a base layer of a substrate 1308882. In such an electronic component that is packaged in a semiconductor package, heat generated from an electronic component such as a resin may be confusing, and there is a possibility that it cannot be used. The package structure of the present embodiment provides a heat dissipation structure of a semiconductor device capable of improving the performance. In the present embodiment, the substrate 200 has a base substrate 5 (8) and an insulating layer 51Q made of a resin or the like. The electronic component 52G The insulating layer 510 is formed on the base substrate 5 to cover the electronic component 520. The wiring pattern 530 electrically connecting the semiconductor device 100 and the electronic component 52 is formed on the substrate 200. An electric conductor 540 electrically connected to the wiring pattern 53 is formed on the substrate 200. A resin-based insulating layer 550 is formed on the substrate 2 to cover the semiconductor device 1 and the wiring pattern 530. And a part of the surface of the conductor 54 is exposed. The wiring pattern 530 electrically connected to the conductor 54G and made of copper (Cu) or the like is formed on the insulating layer. The heat release film 300 is formed on the insulating layer 550. Or the back surface of the base substrate 5〇〇. Thereby, the heat generated by the electronic component 520 or the semiconductor device 1 is transmitted from the arrow 170 shown in the figure to the substrate 2 through the insulating layer 55 or the substrate 2 Heat release The film 300 is released into the surrounding environment. The exothermic film 3 is used in the same structure as the exothermic film of the sixth embodiment. In the present embodiment, the exothermic film formed on the insulating layer 550 is The manner of covering the wiring pattern 560 is formed. Thereby, the heat generated by the electronic component 52〇19 1309882 or the semiconductor device 100 is conducted to the wiring pattern 560 via the conductor 540. This heat utilizes the heat release provided on the wiring pattern 56〇. Since the film is exothermic, the heat release property can be further improved. That is, since the heat generated by the electronic component 520 or the semiconductor device 10 is more efficiently transferred to the heat radiation film 300, the heat dissipation property can be further improved. Further, as shown in FIG. 23, the heat radiation film 3 is formed on the entire back surface of the entire insulating layer 55 or the bottom plate 500, and the heat release property can be further improved. Further, as shown in FIG. 24, it is required to slow down due to thermal expansion or the like. In the case of stress, the heat release film 300 may further have an opening portion 31. Since the opening portion 310 is used to relieve stress, the heat dissipation property can be maintained by using the structure, and the heat release can be reduced. 3〇() may cause breakage due to thermal expansion or the like. As described above, according to the present invention, it is possible to provide a semiconductor device, a heat dissipation structure of a semiconductor device, and a method for manufacturing the same, which are capable of obtaining a high heat radiation effect and correspondingly thinned. In view of the above, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the invention, and various modifications may be made without departing from the spirit and scope of the invention. The scope of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a semiconductor device according to a first example of the present invention. A cross-sectional view of a semiconductor device of a first example of the invention. 3 is a cross-sectional view showing a semiconductor device of a first example of the present invention. 4 is a plan view showing a semiconductor device of a first example of the present invention. 20 1309882 Figure 5 is a cross-sectional view showing a semiconductor device of a second example of the present invention. Figure 6 is a cross-sectional view showing a semiconductor device of a third example of the present invention. Figure 7 is a cross-sectional view showing a semiconductor device according to a fourth example of the present invention. Figure 8 is a cross-sectional view showing a semiconductor device of a fifth example of the present invention. 9 is a cross-sectional view showing a conventional semiconductor device. Figure 10 is a cross-sectional view showing a conventional semiconductor device. Figure 11 is a cross-sectional view showing a conventional semiconductor device. Figure 12 is a cross-sectional view showing the heat releasing structure of the semiconductor device of the sixth example of the present invention. Figure 13 is a plan view showing the heat releasing structure of the semiconductor device of the sixth example of the present invention. Fig. 14 is a view showing a state of deformation of the heat releasing film of the exothermic structure of the semiconductor device of the sixth example of the present invention. Figure 15 is a cross-sectional view showing an exothermic state of the exothermic structure of the semiconductor device of the sixth example of the present invention. Figure 16 is a cross-sectional view showing a variation of the heat releasing structure of the semiconductor device of the sixth example of the present invention. Figure 17 is a flow chart showing the process of manufacturing the exothermic structure of the semiconductor device of the seventh example of the present invention. Fig. 18 is a flow chart showing the process of the manufacturing method of the exothermic structure of the semiconductor device of the seventh example of the present invention. Fig. 19 is a flow chart showing the manufacturing process of the heat generating structure 1309882 of the semiconductor device of the seventh example of the present invention. Figure 20 is a flow chart showing the process of fabricating the exothermic structure of the semiconductor device of the seventh example of the present invention. Figure 21 is a flow chart showing the process of manufacturing the exothermic structure of the semiconductor device of the seventh example of the present invention. Figure 22 is a cross-sectional view showing the heat releasing structure of the semiconductor device of the eighth example of the present invention. Figure 23 is a cross-sectional view showing a modification of the heat radiation structure of the semiconductor device of the eighth example of the present invention. Figure 24 is a cross-sectional view showing a modification of the heat radiation structure of the semiconductor device of the eighth example of the present invention. Figure 25 is a cross-sectional view showing a modification of the heat radiation structure of the semiconductor device of the sixth example of the present invention. [Main component symbol description] 1 semiconductor device 2 substrate 3 south thermal conductive resin 4 electronic component 5 substrate 6 semiconductor device 6a semiconductor device upper surface 7 protective film 8 electrode 9 heavy wiring 10 sealing resin 11 external connection terminal 12 substrate 12a substrate Surface portion 13 Highly radioactive material 14 Slit 15 Substrate 16 Electronic part 22 1309882 17 Insulating resin 19 Electronic part 21 Wiring pattern 22a Substrate surface part 24 Radioactive material 18 Wiring pattern 20 Insulating resin 22 Electronic part Built-in substrate 23 South _ Radioactive Material 25 slit 100 semiconductor device
101、102、103第一與第二面，侧面 102’產品編號等的標記 110半導體元件 120電極 130保護層 140配線 150端子 160樹脂封止層 170、180 箭號 200基板 201基板表面 210配線 220、230 區域 200’外部基板101, 102, 103 first and second sides, side 102' product number, etc. mark 110 semiconductor element 120 electrode 130 protective layer 140 wiring 150 terminal 160 resin sealing layer 170, 180 arrow 200 substrate 201 substrate surface 210 wiring 220 , 230 area 200' external substrate
150’外部電極 300、300a/300b 放熱膜 300’放熱膜之前驅體 3 01放熱材料 310開口部 500底基板 550絕緣層 23150' external electrode 300, 300a/300b heat release film 300' heat release film precursor 3 01 heat release material 310 opening portion 500 base substrate 550 insulation layer 23