TW200723552A - Cis-type thin film solar battery module and process for producing the same - Google Patents
Cis-type thin film solar battery module and process for producing the sameInfo
- Publication number
- TW200723552A TW200723552A TW095136236A TW95136236A TW200723552A TW 200723552 A TW200723552 A TW 200723552A TW 095136236 A TW095136236 A TW 095136236A TW 95136236 A TW95136236 A TW 95136236A TW 200723552 A TW200723552 A TW 200723552A
- Authority
- TW
- Taiwan
- Prior art keywords
- face
- cis
- thin film
- solar battery
- film solar
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000001035 drying Methods 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000005357 flat glass Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005284058A JP2007096031A (ja) | 2005-09-29 | 2005-09-29 | Cis系薄膜太陽電池モジュール及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200723552A true TW200723552A (en) | 2007-06-16 |
Family
ID=37899826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095136236A TW200723552A (en) | 2005-09-29 | 2006-09-29 | Cis-type thin film solar battery module and process for producing the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090032109A1 (zh) |
EP (1) | EP1939946A4 (zh) |
JP (1) | JP2007096031A (zh) |
KR (1) | KR101298058B1 (zh) |
CN (1) | CN101278407B (zh) |
TW (1) | TW200723552A (zh) |
WO (1) | WO2007037406A1 (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5180188B2 (ja) * | 2007-03-28 | 2013-04-10 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池デバイスの製造方法 |
US9646828B2 (en) | 2008-04-02 | 2017-05-09 | Sunlight Photonics Inc. | Reacted particle deposition (RPD) method for forming a compound semi-conductor thin-film |
US7842534B2 (en) | 2008-04-02 | 2010-11-30 | Sunlight Photonics Inc. | Method for forming a compound semi-conductor thin-film |
US20100098854A1 (en) | 2008-10-17 | 2010-04-22 | Sunlight Photonics Inc. | Pressure controlled droplet spraying (pcds) method for forming particles of compound materials from melts |
KR100977509B1 (ko) * | 2008-10-20 | 2010-08-23 | 주식회사 정호실업 | 태양전지모듈용 버스리본 |
US8110428B2 (en) | 2008-11-25 | 2012-02-07 | Sunlight Photonics Inc. | Thin-film photovoltaic devices |
US8110738B2 (en) | 2009-02-20 | 2012-02-07 | Miasole | Protective layer for large-scale production of thin-film solar cells |
US8115095B2 (en) | 2009-02-20 | 2012-02-14 | Miasole | Protective layer for large-scale production of thin-film solar cells |
KR101179443B1 (ko) * | 2009-02-20 | 2012-09-04 | 미아솔 | 박막 태양 전지를 대량 생산하기 위한 보호층 |
KR101014106B1 (ko) * | 2009-03-31 | 2011-02-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US7910396B2 (en) | 2009-10-21 | 2011-03-22 | Sunlight Photonics, Inc. | Three-stage formation of thin-films for photovoltaic devices |
US8012788B1 (en) | 2009-10-21 | 2011-09-06 | Sunlight Photonics Inc. | Multi-stage formation of thin-films for photovoltaic devices |
CN102500758B (zh) * | 2011-09-29 | 2013-06-19 | 厦门大学 | 一种金与铜铟硒的核壳纳米晶及其制备方法 |
US10043921B1 (en) | 2011-12-21 | 2018-08-07 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof |
JP2014075430A (ja) * | 2012-10-03 | 2014-04-24 | Sharp Corp | 太陽電池モジュール |
WO2014139099A1 (en) * | 2013-03-13 | 2014-09-18 | China Sunergy (Nanjing) Co., Ltd. | Soldering system |
CN106494105A (zh) * | 2015-09-07 | 2017-03-15 | 东莞奔迅汽车玻璃有限公司 | 一种钢化玻璃银线印刷方法和一种钢化玻璃 |
DE102015017306B3 (de) * | 2015-12-04 | 2020-03-19 | Solibro Hi-Tech Gmbh | Verfahren zur Herstellung eines Dünnschichtsolarmoduls |
DE102015121144B4 (de) * | 2015-12-04 | 2019-05-09 | Solibro Hi-Tech Gmbh | Dünnschichtsolarmodul |
FR3059001B1 (fr) | 2016-11-24 | 2021-07-23 | Saint Gobain | Procede d'obtention de plaques de verre marquees |
CN110832646B (zh) * | 2017-07-04 | 2023-02-28 | 旭化成株式会社 | 紫外线发光装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4323785A (en) * | 1980-05-16 | 1982-04-06 | Libbey-Owens-Ford Company | Method of and apparatus for observing sheet surfaces for traces of fluorescent materials thereon |
US5176493A (en) * | 1989-02-24 | 1993-01-05 | North American Philips Corporation | High speed wafer handling method |
DE59002516D1 (de) * | 1989-04-06 | 1993-10-07 | Ciba Geigy | Laserbeschriftung von keramischen Materialien, Glasuren, keramischen Gläsern und Gläsern. |
JP2810151B2 (ja) * | 1989-10-07 | 1998-10-15 | ホーヤ株式会社 | レーザマーキング方法 |
DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
US5964643A (en) * | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
JPH09278494A (ja) * | 1996-04-15 | 1997-10-28 | Corning Japan Kk | ガラス基板へのマーキング方法 |
JP3292294B2 (ja) * | 1997-11-07 | 2002-06-17 | 住友重機械工業株式会社 | レーザを用いたマーキング方法及びマーキング装置 |
JP2000119048A (ja) * | 1998-10-08 | 2000-04-25 | Nippon Sheet Glass Co Ltd | 合わせガラス体とプラズマディスプレイ前面板 |
US6380480B1 (en) * | 1999-05-18 | 2002-04-30 | Nippon Sheet Glass Co., Ltd | Photoelectric conversion device and substrate for photoelectric conversion device |
JP2001318056A (ja) * | 2000-05-02 | 2001-11-16 | Luceo Co Ltd | フロートガラス錫付着面識別装置 |
JP4738582B2 (ja) * | 2000-09-29 | 2011-08-03 | 日本板硝子株式会社 | 光電変換素子用基板、その製造方法およびそれを用いた光電変換素子 |
FR2820241B1 (fr) * | 2001-01-31 | 2003-09-19 | Saint Gobain | Substrat transparent muni d'une electrode |
US6635307B2 (en) * | 2001-12-12 | 2003-10-21 | Nanotek Instruments, Inc. | Manufacturing method for thin-film solar cells |
WO2003057638A1 (fr) * | 2001-12-28 | 2003-07-17 | Nippon Sheet Glass Company, Limited | Verre en feuilles et verre en feuilles utilise avec un convertisseur photoelectrique |
WO2003065386A1 (fr) * | 2002-01-28 | 2003-08-07 | Nippon Sheet Glass Company, Limited | Procede permettant de former un film conducteur transparent, ledit film conducteur transparent, substrat de verre comportant ledit film conducteur transparent et unite de transduction photoelectrique comprenant ledit substrat de verre |
JP4110515B2 (ja) * | 2002-04-18 | 2008-07-02 | 本田技研工業株式会社 | 薄膜太陽電池およびその製造方法 |
JP2004051436A (ja) * | 2002-07-22 | 2004-02-19 | Matsushita Electric Ind Co Ltd | フロートガラスの検査方法および検査装置 |
JP2004067394A (ja) * | 2002-08-01 | 2004-03-04 | Nippon Sheet Glass Co Ltd | 両面防汚膜付きガラスおよびその製造方法 |
JP2004142998A (ja) * | 2002-10-25 | 2004-05-20 | Nippon Sheet Glass Co Ltd | 薄膜を有するガラス物品およびその製造方法 |
JP4064340B2 (ja) * | 2003-12-25 | 2008-03-19 | 昭和シェル石油株式会社 | 集積型薄膜太陽電池の製造方法 |
DE102004027411A1 (de) * | 2004-06-04 | 2005-12-29 | Boraglas Gmbh | Verfahren und Vorrichtung zur Identifizierung von Zinn- und Feuerseite bei Floatgläsern |
US20060000553A1 (en) * | 2004-06-30 | 2006-01-05 | Arun Ramamoorthy | Minimizing particle contamination of semiconductor wafers during pressure evacuation by selective orientation and shielding |
JP4660354B2 (ja) * | 2005-01-18 | 2011-03-30 | 新光電気工業株式会社 | 導電性薄膜の加工方法及び装置 |
JP2007059484A (ja) * | 2005-08-22 | 2007-03-08 | Matsushita Electric Ind Co Ltd | 太陽電池の製造方法および太陽電池 |
-
2005
- 2005-09-29 JP JP2005284058A patent/JP2007096031A/ja active Pending
-
2006
- 2006-09-29 TW TW095136236A patent/TW200723552A/zh unknown
- 2006-09-29 EP EP06810907.3A patent/EP1939946A4/en not_active Withdrawn
- 2006-09-29 US US12/088,779 patent/US20090032109A1/en not_active Abandoned
- 2006-09-29 KR KR1020087007648A patent/KR101298058B1/ko not_active IP Right Cessation
- 2006-09-29 WO PCT/JP2006/319527 patent/WO2007037406A1/ja active Application Filing
- 2006-09-29 CN CN2006800360087A patent/CN101278407B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1939946A4 (en) | 2015-07-22 |
KR101298058B1 (ko) | 2013-08-20 |
JP2007096031A (ja) | 2007-04-12 |
EP1939946A1 (en) | 2008-07-02 |
WO2007037406A1 (ja) | 2007-04-05 |
CN101278407A (zh) | 2008-10-01 |
US20090032109A1 (en) | 2009-02-05 |
CN101278407B (zh) | 2010-11-17 |
KR20080064814A (ko) | 2008-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200723552A (en) | Cis-type thin film solar battery module and process for producing the same | |
TW200729529A (en) | CIS series thin film solar cell module and the making method | |
TW200731518A (en) | Semiconductor device and manufacturing method of the same | |
MX2009009666A (es) | Metodo para la produccion de una celula solar asi como celula solar producida utilizando dicho metodo. | |
WO2006053219A8 (en) | Vertical production of photovoltaic devices | |
TW200620708A (en) | Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device | |
TW200633241A (en) | Vertical production of photovoltaic devices | |
TW200613310A (en) | Organic photosensitive devices | |
TW200951359A (en) | LED lamp module and its fabricating method | |
WO2007109568A3 (en) | Method and structure for fabricating solar cells | |
TW200637041A (en) | Nitride semiconductor light-emitting device and method for fabrication thereof | |
TW200637047A (en) | Organic light emitting diode display | |
MY147397A (en) | Led assembly and module | |
TW200735436A (en) | Organic light emitting transistor element, its manufacturing method, and light emitting display device | |
TW200627668A (en) | A light-emitting device | |
WO2007120197A3 (en) | Encapsulation of photovoltaic cells | |
EA201070226A1 (ru) | Способ изготовления стеклопакетного блока и окно, содержащее такой стеклопакетный блок | |
TW200706060A (en) | Color filter conversion apparatus and OLED apparatus thereof | |
Yang et al. | Organic semiconductors: commercialization and market | |
CN102751242B (zh) | 具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列基板 | |
WO2004106409A8 (en) | Polymer | |
EP2434550A4 (en) | SOLAR CELL AND MANUFACTURING METHOD THEREFOR | |
WO2009008106A1 (ja) | 受光装置および受光装置の製造方法 | |
WO2005106954A3 (de) | Leistungshalbleiterschaltung und verfahren zum herstellen einer leistungshalbleiterschaltung | |
TW200642108A (en) | Method of utilizing the surface mount technology to assemble LED light source, and combination of its LED light source and lens lid |