CN101278407B - Cis系薄膜太阳电池组件的制造方法 - Google Patents
Cis系薄膜太阳电池组件的制造方法 Download PDFInfo
- Publication number
- CN101278407B CN101278407B CN2006800360087A CN200680036008A CN101278407B CN 101278407 B CN101278407 B CN 101278407B CN 2006800360087 A CN2006800360087 A CN 2006800360087A CN 200680036008 A CN200680036008 A CN 200680036008A CN 101278407 B CN101278407 B CN 101278407B
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- thin film
- cis
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- film solar
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- 239000010409 thin film Substances 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims description 84
- 239000011521 glass Substances 0.000 claims abstract description 206
- 238000004519 manufacturing process Methods 0.000 claims abstract description 43
- 239000010408 film Substances 0.000 claims description 80
- 239000005329 float glass Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 2
- 230000000007 visual effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 80
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000001035 drying Methods 0.000 abstract description 3
- 238000005406 washing Methods 0.000 abstract 2
- 239000005357 flat glass Substances 0.000 abstract 1
- 238000006124 Pilkington process Methods 0.000 description 18
- 238000010981 drying operation Methods 0.000 description 7
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 6
- 230000004927 fusion Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910000928 Yellow copper Inorganic materials 0.000 description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000000976 ink Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- ZQRRBZZVXPVWRB-UHFFFAOYSA-N [S].[Se] Chemical compound [S].[Se] ZQRRBZZVXPVWRB-UHFFFAOYSA-N 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 231100000241 scar Toxicity 0.000 description 2
- 229940065287 selenium compound Drugs 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- KYRUBSWVBPYWEF-UHFFFAOYSA-N copper;iron;sulfane;tin Chemical group S.S.S.S.[Fe].[Cu].[Cu].[Sn] KYRUBSWVBPYWEF-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005284058A JP2007096031A (ja) | 2005-09-29 | 2005-09-29 | Cis系薄膜太陽電池モジュール及びその製造方法 |
JP284058/2005 | 2005-09-29 | ||
PCT/JP2006/319527 WO2007037406A1 (ja) | 2005-09-29 | 2006-09-29 | Cis系薄膜太陽電池モジュール及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101278407A CN101278407A (zh) | 2008-10-01 |
CN101278407B true CN101278407B (zh) | 2010-11-17 |
Family
ID=37899826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800360087A Expired - Fee Related CN101278407B (zh) | 2005-09-29 | 2006-09-29 | Cis系薄膜太阳电池组件的制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090032109A1 (zh) |
EP (1) | EP1939946A4 (zh) |
JP (1) | JP2007096031A (zh) |
KR (1) | KR101298058B1 (zh) |
CN (1) | CN101278407B (zh) |
TW (1) | TW200723552A (zh) |
WO (1) | WO2007037406A1 (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7977139B2 (en) * | 2007-03-28 | 2011-07-12 | Showa Shell Sekiyu K.K. | Method for manufacturing CIS based thin film solar cell device |
US7842534B2 (en) | 2008-04-02 | 2010-11-30 | Sunlight Photonics Inc. | Method for forming a compound semi-conductor thin-film |
US9646828B2 (en) * | 2008-04-02 | 2017-05-09 | Sunlight Photonics Inc. | Reacted particle deposition (RPD) method for forming a compound semi-conductor thin-film |
US20100098854A1 (en) | 2008-10-17 | 2010-04-22 | Sunlight Photonics Inc. | Pressure controlled droplet spraying (pcds) method for forming particles of compound materials from melts |
KR100977509B1 (ko) * | 2008-10-20 | 2010-08-23 | 주식회사 정호실업 | 태양전지모듈용 버스리본 |
US8110428B2 (en) | 2008-11-25 | 2012-02-07 | Sunlight Photonics Inc. | Thin-film photovoltaic devices |
US8110738B2 (en) | 2009-02-20 | 2012-02-07 | Miasole | Protective layer for large-scale production of thin-film solar cells |
US8115095B2 (en) | 2009-02-20 | 2012-02-14 | Miasole | Protective layer for large-scale production of thin-film solar cells |
EP2399295B1 (en) * | 2009-02-20 | 2019-04-10 | Beijing Apollo Ding rong Solar Technology Co., Ltd. | Protective layer for large-scale production of thin-film solar cells |
KR101014106B1 (ko) * | 2009-03-31 | 2011-02-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US7910396B2 (en) | 2009-10-21 | 2011-03-22 | Sunlight Photonics, Inc. | Three-stage formation of thin-films for photovoltaic devices |
US8012788B1 (en) | 2009-10-21 | 2011-09-06 | Sunlight Photonics Inc. | Multi-stage formation of thin-films for photovoltaic devices |
CN102500758B (zh) * | 2011-09-29 | 2013-06-19 | 厦门大学 | 一种金与铜铟硒的核壳纳米晶及其制备方法 |
US10043921B1 (en) | 2011-12-21 | 2018-08-07 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof |
JP2014075430A (ja) * | 2012-10-03 | 2014-04-24 | Sharp Corp | 太陽電池モジュール |
US9837559B2 (en) * | 2013-03-13 | 2017-12-05 | China Sunergy (Nanjing) Co. Ltd. | Soldering system |
CN106494105A (zh) * | 2015-09-07 | 2017-03-15 | 东莞奔迅汽车玻璃有限公司 | 一种钢化玻璃银线印刷方法和一种钢化玻璃 |
DE102015121144B4 (de) * | 2015-12-04 | 2019-05-09 | Solibro Hi-Tech Gmbh | Dünnschichtsolarmodul |
DE102015017306B3 (de) * | 2015-12-04 | 2020-03-19 | Solibro Hi-Tech Gmbh | Verfahren zur Herstellung eines Dünnschichtsolarmoduls |
FR3059001B1 (fr) | 2016-11-24 | 2021-07-23 | Saint Gobain | Procede d'obtention de plaques de verre marquees |
JP6934053B2 (ja) * | 2017-07-04 | 2021-09-08 | 旭化成株式会社 | 紫外線発光装置 |
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US4323785A (en) * | 1980-05-16 | 1982-04-06 | Libbey-Owens-Ford Company | Method of and apparatus for observing sheet surfaces for traces of fluorescent materials thereon |
US5176493A (en) * | 1989-02-24 | 1993-01-05 | North American Philips Corporation | High speed wafer handling method |
EP0391848B1 (de) * | 1989-04-06 | 1993-09-01 | Ciba-Geigy Ag | Laserbeschriftung von keramischen Materialien, Glasuren, keramischen Gläsern und Gläsern |
JP2810151B2 (ja) * | 1989-10-07 | 1998-10-15 | ホーヤ株式会社 | レーザマーキング方法 |
DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
US5964643A (en) * | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
JPH09278494A (ja) * | 1996-04-15 | 1997-10-28 | Corning Japan Kk | ガラス基板へのマーキング方法 |
JP3292294B2 (ja) * | 1997-11-07 | 2002-06-17 | 住友重機械工業株式会社 | レーザを用いたマーキング方法及びマーキング装置 |
JP2000119048A (ja) * | 1998-10-08 | 2000-04-25 | Nippon Sheet Glass Co Ltd | 合わせガラス体とプラズマディスプレイ前面板 |
US6380480B1 (en) * | 1999-05-18 | 2002-04-30 | Nippon Sheet Glass Co., Ltd | Photoelectric conversion device and substrate for photoelectric conversion device |
JP2001318056A (ja) * | 2000-05-02 | 2001-11-16 | Luceo Co Ltd | フロートガラス錫付着面識別装置 |
JP4738582B2 (ja) * | 2000-09-29 | 2011-08-03 | 日本板硝子株式会社 | 光電変換素子用基板、その製造方法およびそれを用いた光電変換素子 |
FR2820241B1 (fr) * | 2001-01-31 | 2003-09-19 | Saint Gobain | Substrat transparent muni d'une electrode |
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EP1460044B2 (en) * | 2001-12-28 | 2016-10-26 | Nippon Sheet Glass Company, Limited | Sheet glass and photoelectric converter-use sheet glass |
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JP4110515B2 (ja) * | 2002-04-18 | 2008-07-02 | 本田技研工業株式会社 | 薄膜太陽電池およびその製造方法 |
JP2004051436A (ja) * | 2002-07-22 | 2004-02-19 | Matsushita Electric Ind Co Ltd | フロートガラスの検査方法および検査装置 |
JP2004067394A (ja) * | 2002-08-01 | 2004-03-04 | Nippon Sheet Glass Co Ltd | 両面防汚膜付きガラスおよびその製造方法 |
JP2004142998A (ja) * | 2002-10-25 | 2004-05-20 | Nippon Sheet Glass Co Ltd | 薄膜を有するガラス物品およびその製造方法 |
JP4064340B2 (ja) * | 2003-12-25 | 2008-03-19 | 昭和シェル石油株式会社 | 集積型薄膜太陽電池の製造方法 |
DE102004027411A1 (de) * | 2004-06-04 | 2005-12-29 | Boraglas Gmbh | Verfahren und Vorrichtung zur Identifizierung von Zinn- und Feuerseite bei Floatgläsern |
US20060000553A1 (en) * | 2004-06-30 | 2006-01-05 | Arun Ramamoorthy | Minimizing particle contamination of semiconductor wafers during pressure evacuation by selective orientation and shielding |
JP4660354B2 (ja) * | 2005-01-18 | 2011-03-30 | 新光電気工業株式会社 | 導電性薄膜の加工方法及び装置 |
JP2007059484A (ja) * | 2005-08-22 | 2007-03-08 | Matsushita Electric Ind Co Ltd | 太陽電池の製造方法および太陽電池 |
-
2005
- 2005-09-29 JP JP2005284058A patent/JP2007096031A/ja active Pending
-
2006
- 2006-09-29 US US12/088,779 patent/US20090032109A1/en not_active Abandoned
- 2006-09-29 KR KR1020087007648A patent/KR101298058B1/ko not_active IP Right Cessation
- 2006-09-29 WO PCT/JP2006/319527 patent/WO2007037406A1/ja active Application Filing
- 2006-09-29 EP EP06810907.3A patent/EP1939946A4/en not_active Withdrawn
- 2006-09-29 CN CN2006800360087A patent/CN101278407B/zh not_active Expired - Fee Related
- 2006-09-29 TW TW095136236A patent/TW200723552A/zh unknown
Non-Patent Citations (1)
Title |
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JP特开2002-111025A 2002.04.12 |
Also Published As
Publication number | Publication date |
---|---|
EP1939946A1 (en) | 2008-07-02 |
US20090032109A1 (en) | 2009-02-05 |
JP2007096031A (ja) | 2007-04-12 |
CN101278407A (zh) | 2008-10-01 |
KR101298058B1 (ko) | 2013-08-20 |
TW200723552A (en) | 2007-06-16 |
WO2007037406A1 (ja) | 2007-04-05 |
KR20080064814A (ko) | 2008-07-09 |
EP1939946A4 (en) | 2015-07-22 |
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