TW202109931A - 鈣鈦礦太陽能電池模組的製造方法及鈣鈦礦太陽能電池模組 - Google Patents
鈣鈦礦太陽能電池模組的製造方法及鈣鈦礦太陽能電池模組 Download PDFInfo
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- TW202109931A TW202109931A TW108130150A TW108130150A TW202109931A TW 202109931 A TW202109931 A TW 202109931A TW 108130150 A TW108130150 A TW 108130150A TW 108130150 A TW108130150 A TW 108130150A TW 202109931 A TW202109931 A TW 202109931A
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- solar cell
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- perovskite solar
- transparent conductive
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Abstract
習知技術利用雷射切割或機械切割將一鈣鈦礦太陽能電池模組分割成複數個太陽能電池單元,然而這樣的方式通常會造成各個太陽能電池單元受到不同程度及類型的破壞。本發明主要提出一種鈣鈦礦太陽能電池模組的製造方法,其係使用雷射切割於一透明基板之上製作出複數個透明導電膜;接著,再使用第一遮罩於該複數個透明導電膜之上依序地形成複數個電洞傳輸膜、複數個主動層、以及複數個電子傳輸膜。最終,透過第二遮罩之使用而在各該電子傳輸膜鍍上一電連接層之後,即在單一透明基板之上完成包含複數個太陽能電池單元之一鈣鈦礦太陽能電池模組的製作。特別地,各該太陽能電池單元在製作過程中不會受到雷射切割或製程環境之不良影響,因而能夠保持優秀的光電轉換效率。
Description
本發明係關於太陽能電池(Solar cell)的技術領域,尤指一種鈣鈦礦太陽能電池模組的製造方法及一種鈣鈦礦太陽能電池模組。
風能與太陽能為廣為人知的可再生能源(Renewable energy),其中太陽能電池已成為廣泛應用的一種光伏元件,其用以具有特定的光伏材料可將太陽能直接轉換成電能。太陽能電池的技術發展可區分為三代。第一代太陽能電池主要是由矽所製成,具有高轉換效率(15-20%)之優點。第二代太陽能電池為由化合物半導體製成的薄膜太陽能電池(Thin film solar cell),其中所述化合物半導體例如: 碲化鎘(CdTe)、砷化鎵(GaAs)、銅銦硒化物(Copper indium selenide, CIS)、與銅銦鎵硒化物(Copper Indium Gallium Selenide, CIGS)。
第三代太陽能電池包括:染料敏化太陽能電池、高分子有機太陽能電池、小分子有機太陽能電池、以及鈣鈦礦太陽能電池(Perovskite solar cell)。請參閱圖1,係顯示習知的一種鈣鈦礦太陽能電池之側面剖視圖。如圖1所示,習知的鈣鈦礦太陽能電池1’的基礎元件結構包括:一透明導電基板11’、一電洞傳輸層12’、一主動層13’、一電子傳輸層14’、以及一金屬層15’。該透明導電基板11’包括一透明基板111’以及形成於該透明導電基板111’之上的一透明導電層112’,且該透明導電層通常由氧化銦錫(Indium tin oxide, ITO)製成。值得說明的是,主動層13’係由吸光材料-鈣鈦礦所製成。
進一步地,美國專利公開號US2016/0276611A1揭示同時包括複數個光轉換單元的一光電轉換裝置。如美國專利公開號US2016/0276611A1之附圖的FIG. 3A所示,製作所述光電轉換裝置時,係先於一透明基板(2)上形成一透明電極層(4A, 4B, 4C),且接著於該透明電極層(4A, 4B, 4C)之上形成一光電轉換層(5X)。如FIG. 3B所示,接著於該光電轉換層(5X)之上應用一切割製程(Scribing process),以於該光電轉換層(5X)之上製作出複數條切割道(11A, 11B),而後以該切割道(11A, 11B)將所述光電轉換層(5X)分成複數個光電轉換膜(5A, 5B, 5C)。最終,如FIG. 3C所示,於該複數個光電轉換膜(5A, 5B, 5C)之上接著形成對應的複數個電連接層(6A, 6B, 6C)。如此,即完成同時包括多個光電轉換單元(3A, 3B, 3C)的該光電轉換裝置之製作。
美國專利公開號US2016/0276611A1教示了如何於單一透明基板之上製作出同時包含多個光電轉換單元的光電轉換裝置。然而,於實際應用已揭示之光電轉換裝置的製作方法的過程中,係發現已揭示之製作方法顯示出以下實務缺陷。特別是,已揭示之製作方法主要是利用機械切割(Mechanical scribing)的方式完成如FIG. 3B所示之切割製程(Scribing process)。然而,在應用機械切割的過程中,材質相對較硬的透明電極層(例如:ITO)容易造成材質相對較軟的主動層(例如: 鈣鈦礦)殘留於透明電極層之上,導致最頂層的電連接層與透明電極層之連接處的接面電阻增加。雖然,增加機械切割的力道可以避免發生所述接面電阻增加之情事,但是卻容易對透明電極層造成破壞。
另一種已知的將單一光電轉換層切割成複數個光電轉換膜之技術為雷射切割(Laser scribing)。然而,實務經驗顯示,利用雷射光束將單一電連接層切割區分成複數個電連接層時,低功率雷射光束容易造成部分的電連接層斷裂不完整,導致複數個光電轉換單元之間短路。相反地,高功率雷射光束容易造成配置於電連接層之下層的主動層受到破壞。有鑑於此,美國專利號US5,348,589教示了利用絕緣物(Insulating strip)作為防止主動層遭到雷射切割破壞之構件,並也能使連接層完全被分割。然而,美國專利號US5,348,589所教示之技術明顯導致製程複雜度及成本增加。
此外,實務經驗亦顯示,雷射切割(Laser scribing)通常在一般大氣環境中進行,這樣環境的水氣及氧氣含量容易導致由鈣鈦礦製成之主動層13’產生晶體結構的變化,因而降低其穩定性。另一方面,由於雷射切割是藉由材料吸收達到切割移除該材料之目的,因此,當具有相近能隙(Band gap)的兩種材料堆疊在一起,實難以雷射切割精準控制僅完全切割移除上層材料,通常會造成上層材料被切割不完全或下層材料表面被切割。實務經驗顯示,移除不完全的上層材料容易導致在切割處兩側的鈣鈦礦太陽能電池1’產生短路,降低其所形成的模組之光電轉換效率。
由上述說明可知,目前仍未有一特別的鈣鈦礦太陽能電池模組製造方法被提出,進而在單一透明基板之上同時製作出多個鈣鈦礦太陽能電池。基於上述緣由,本案之發明人係極力地研究發明,最終開發出本發明之一種鈣鈦礦太陽能電池模組的製造方法及一種鈣鈦礦太陽能電池模組。
本發明之主要目的在於提供一種鈣鈦礦太陽能電池模組的製造方法,其係使用雷射切割於一透明基板之上製作出複數個透明導電膜;接著,再使用第一遮罩於該複數個透明導電膜之上依序地形成複數個電洞傳輸膜、複數個主動層、以及複數個電子傳輸膜。最終,透過第二遮罩之使用而在各該電子傳輸膜鍍上一電連接層之後,即在單一透明基板之上完成包含複數個太陽能電池單元之一鈣鈦礦太陽能電池模組的製作。特別地,各該太陽能電池單元在製作過程中不會受到雷射切割或製程環境之不良影響,因而能夠保持優秀的光電轉換效率。
為了達成上述本發明之主要目的,本案發明人係提供所述鈣鈦礦太陽能電池模組的製造方法之一實施例,其包括以下步驟:
(1)提供一透明導電基板,其包括一透明基板與形成於該透明基板之上;
(2)利用一雷射束對該透明導電層進行切割,以於該透明導電層之上製作出複數條切割道,進而利用該複數條切割道將所述透明導電層分成複數個透明導電膜;
(3)將一第一遮罩置於該複數個透明導電膜之上,接著透過該第一遮罩於該複數個透明導電膜之上形成複數個電洞傳輸膜;
(4)將該第一遮罩置於該複數個電洞傳輸膜之上,接著透過該第一遮罩於該複數個電洞傳輸膜之上形成複數個主動層;
(5)將該第一遮罩置於該複數個主動層之上,接著透過該第一遮罩於該複數個主動層之上形成複數個電子傳輸膜;以及
(6)將一第二遮罩置於該複數個電子傳輸膜之上,接著透過該第二遮罩於該複數個電子傳輸膜之上形成複數個電連接層。
同時,本發明提供一種鈣鈦礦太陽能電池模組,其係利用如前所述之鈣鈦礦太陽能電池模組的製造方法所製成。
並且,為了達成上述本發明之主要目的,本案發明人係同時提供所述鈣鈦礦太陽能電池模組之一實施例,其包括:
一透明導電基板,包括一透明基板與形成於該透明基板之上的一透明導電層;
複數條切割道,形成於該透明導電層之上,且將該透明導電層分成複數個透明導電膜;
複數個電洞傳輸膜,形成於該複數個透明導電膜之上;
複數個主動層,形成於該複數個電洞傳輸膜之上;
複數個電子傳輸膜,形成於該複數個主動層之上;以及
複數個電連接層,形成於該複數個電子傳輸膜之上;
其中,各該透明導電膜、各該電洞傳輸膜、各該主動層、各該電子傳輸膜、與各該電連接層係於該透明基板之上構成複數個太陽能電池單元。
為了能夠更清楚地描述本發明所提出之一種鈣鈦礦太陽能電池模組的製造方法及一種鈣鈦礦太陽能電池模組,以下將配合圖式,詳盡說明本發明之較佳實施例。
具複數個太陽能電池單元之鈣鈦礦太陽能電池模組
圖2顯示本發明之一種鈣鈦礦太陽能電池模組的示意性剖視圖。如圖2所示,本發明之鈣鈦礦太陽能電池模組1包括:一透明導電基板10、複數個電洞傳輸膜11、複數個主動層12、複數個電子傳輸膜13、以及複數個電連接層14。其中,該透明導電基板10包括一透明基板101與形成於該透明基板101之上的一透明導電層102。在可行的實施例中,該透明導電層102之製造材料可為下列任一者:氧化銦錫(Indium tin oxide, ITO)、氟摻雜二氧化錫(Fluorine-doped tin oxide, FTO)、氧化銦鋅(Indium zinc oxide, IZO)、鎵摻雜氧化鋅(Gallium-doped zinc oxide, GZO)、或鋁摻雜氧化鋅(Aluminum-doped zinc oxide, AZO)。
繼續地參閱圖2,並請同時參閱圖3,其顯示透明基板101與該透明導電層102的立體圖。值得說明的是,本發明係利用雷射切割(Laser scribing)的方式,對該透明導電層102進行圖案化 (Patterning)。如圖2與圖3所示,本發明係利用一雷射束對該透明導電層102進行切割,以於該透明導電層102之上製作出複數條切割道10G,進而利用該複數條切割道10G將所述透明導電層102分成複數個透明導電膜10F。
另一方面,該複數個電洞傳輸膜11係形成於該複數個透明導電膜10F之上,且該複數個主動層12係形成於該複數個電洞傳輸膜11之上。本發明電洞傳輸膜11的製造材料主要為氧化物,其可以是氧化鎳(NiO)或氧化鉬(MoO3
)
並且,於本發明中,主動層12主要由一光電轉換材料製成,且該光電轉換材料之化學結構式表示為Ax
B1-x
CDy
E3-y
。其中,A與B皆可為銫離子(Cs+
)、CH3
NH3 +
或H2
N=CHNH2 +
。值得說明的是,CH3
NH3 +
通常亦簡寫為MA+
,而H2
N=CHNH2 +
通常亦簡寫為FA+
,而x為0至1之實數。另一方面,C為鍺離子(Ge2+
)、錫離子(Sn2+
)、或鉛離子(Pb2+
)。再者,D與E皆可為氯離子(Cl-
)、溴離子(Br-
)、或碘離子(I-
),而y為0至3之實數。
更詳細地說明,該複數個電子傳輸膜13係形成於該複數個主動層12之上,且該複數個電連接層14係形成於該複數個電子傳輸膜13之上。在可行的實施例中,該電子傳輸膜13之製造材料可為下列任一者:富勒烯(C60
)、富勒烯衍生物PCBM、二氧化鈦(TiO2
)、或氧化鋅(ZnO)。另一方面,該電連接層14之製造材料可為下列任一者:鋁(Al)、銀(Ag)、或金(Au)。
依據本發明之設計,如圖2所示,各該透明導電膜10F、各該電洞傳輸膜11、各該主動層12、各該電子傳輸膜13、與各該電連接層14係於該透明基板101之上構成複數個太陽能電池單元。簡單地說,本發明係於單一透明基板101之上依序形成透明導電層102,且將該透明導電層102分割成複數個透明導電膜10F之後,接著於該複數個透明導電膜10F之上依序地形成複數個電洞傳輸膜11、複數個主動層12、複數個電子傳輸膜13、以及複數個電連接層14,進而完成包含複數個太陽能電池單元之一鈣鈦礦太陽能電池模組1。
鈣鈦礦太陽能電池模組的製造方法
前述說明係透過圖2的輔助而清楚地描述本發明之一種鈣鈦礦太陽能電池模組的結構組成;繼續地,下文將接著說明本發明之一種鈣鈦礦太陽能電池模組的製造方法。請參閱圖4,其顯示本發明之一種鈣鈦礦太陽能電池模組的製造方法的流程圖。並且,圖5至圖11顯示本發明之鈣鈦礦太陽能電池模組的示意性製造流程圖。必須事先說明的是,於圖5至圖11之各該製造流程圖之中,圖(a)係透過上視圖的方式表現鈣鈦礦太陽能電池模組的製造流程,而圖(b)則以剖視圖的方式表現鈣鈦礦太陽能電池模組的製造流程。
如圖4、圖5、與圖6所示,本發明之鈣鈦礦太陽能電池模組的製造方法係首先執行步驟S1:提供包括一透明基板101與形成於該透明基板101之上的一透明導電層102之一透明導電基板10。在可行的實施例(Practicable embodiment)中,可以利用濺鍍(Sputtering)或電子束蒸鍍(E-beam evaporation)等製程方式於該透明基板101之上形成所述透明導電層102(例如:ITO)。當然,也可以直接購買所述透明導電基板10之商用產品,該商用產品之透明基板101(例如:玻璃基板)之上係已鍍有透明導電層102。
如圖4與圖7所示,製造方法係接著執行步驟S2:利用一雷射束對該透明導電層102進行切割,以於該透明導電層102之上製作出複數條切割道10G,進而利用該複數條切割道10G將所述透明導電層102分成複數個透明導電膜10F。特別說明的是,本發明之製造方法係以雷射切割(Laser scribing)完成透明導電層102之圖案化(Patterning),而不使用黃光製程(Photolithography)。主要原因在於,本發明要求各所述切割道10G的寬度(亦即,任二透明導電膜10F之間的間隙)越小越好,而使用雷射切割可以在透明導電層102之上製作出符合標準的複數條切割道10G。雖然使用黃光製程亦能夠達成相同的結果,但是黃光製程必須採用會危害人體的有毒物質(例如:光阻劑、顯影劑)。
繼續地,如圖4與圖8所示,製造方法係接著執行步驟S3:將一第一遮罩置於該複數個透明導電膜10F之上,接著透過該第一遮罩於該複數個透明導電膜10F之上形成複數個電洞傳輸膜11。執行步驟S3之前,必須先對帶有複數個透明導電膜10F之透明基板101執行一表面處理,例如: 紫外光臭氧處理。易於理解的,所述第一遮罩具有用於協助完成薄膜沉積的一圖案化布局。並且,將第一遮罩置於該複數個透明導電膜10F之上後,便可接著利用真空鍍膜的方式(例如:電子束蒸鍍)而透過該第一遮罩於該複數個透明導電膜10F之上形成複數個電洞傳輸膜11(例如:NiO)。完成電子束蒸鍍之後,接著對含有複數個電洞傳輸膜11、複數個透明導電膜10F及透明基板101的一半成品執行熱退火處理(Thermal annealing),藉此方式提升該電洞傳輸膜11的品質。
接著,如圖4與圖9所示,製造方法係接著執行步驟S4:將該第一遮罩置於該複數個電洞傳輸膜11之上,接著透過該第一遮罩於該複數個電洞傳輸膜11之上形成複數個主動層12。特別地,本發明係以「二步製法」完成該主動層12之製造。圖9A顯示二步製法之示意性製造流程圖。如圖9A的(a)圖所示,首先將該第一遮罩置於該複數個電洞傳輸膜11之上,進以透過該第一遮罩於該複數個電洞傳輸膜11之上形成複數個第一材料膜層121,其中該第一材料膜層121。接著,如圖9A的(b)圖和(c)圖所示,透過該第一遮罩於該第一材料膜層121之上鍍上第二材料122,進而令各所述第一材料膜層121與所述第二材料122反應生成各所述主動層12。舉例而言,可以利用真空鍍膜的方式(例如:熱阻式蒸鍍Thermal evaporation)而透過第一遮罩於各該電洞傳輸膜11之上鍍上一層第一材料膜層121(例如:碘化鉛PbI2
);接著,利用真空鍍膜的方式(例如:化學氣相沉積Chemical vapor deposition)透過第一遮罩於各該第一前驅物之上再鍍上第二材料122(例如:H2
N=CHNH2
I)。之後,第一材料膜層121(PbI2
)便會與第二材料122(H2
N=CHNH2
I)產生化學反應,如此各該電洞傳輸膜11之上便會形成有由鈣鈦礦(H2
N=CHNH2
PbI3
)製成的主動層12。
繼續地,如圖4與圖10所示,製造方法係接著執行步驟S5:將該第一遮罩置於該複數個主動層12之上,接著透過該第一遮罩於該複數個主動層12之上形成複數個電子傳輸膜13。例如,使用真空鍍膜的方式(例如:熱阻式蒸鍍)透過該第一遮罩於各該主動層12鍍上一層電子傳輸膜13(例如:ZnO)。補充說明的是,習知技術(例如: 美國專利號US5,348,589)採用以高能量的雷射光束對透明導電層102、電洞傳輸膜11、主動層12、和電子傳輸膜13執行雷射切割,藉此方式實現包含複數個太陽能電池單元之一鈣鈦礦太陽能電池模組1。必須知道的是,雷射切割通常在一般大氣環境中進行,這樣環境的水氣及氧氣含量容易導致由鈣鈦礦製成之主動層12產生晶體結構的變化,因而降低其穩定性。另一方面,由於雷射切割是藉由材料吸收達到切割移除該材料之目的,因此,當具有相近能隙的兩種材料堆疊在一起,實難以雷射切割精準控制僅完全切割移除上層材料,通常會造成上層材料被切割不完全或下層材料表面被切割。實務經驗顯示,移除不完全的上層材料容易導致在切割處兩側的太陽能電池單元產生短路,降低其所形成的鈣鈦礦太陽能電池模組1之光電轉換效率。
因此,本發明的製造方法係先利用雷射束對該透明導電層102進行切割,以於該透明基板101之上製作出複數個透明導電膜10F。接著,再使用同一個遮罩(亦即,第一遮罩)於該複數個透明導電膜10F之上依序地形成複數個電洞傳輸膜11、複數個主動層12、以及複數個電子傳輸膜13。必須加以說明的是,該步驟S3、該步驟S4、與該步驟S5皆是利用薄膜沉積技術配合第一遮罩於一真空腔體內完成該複數個電洞傳輸膜11、該複數個主動層12、以及該複數個電子傳輸膜13之製作,因此所製得之主動層12不會有水氧影響鈣鈦礦之穩定性的問題。
最終,如圖4與圖11所示,製造方法係接著執行步驟S6:將將一第二遮罩置於該複數個電子傳輸膜13之上,接著透過該第二遮罩於該複數個電子傳輸膜13之上形成複數個電連接層14。舉例而言,使用真空鍍膜的方式(例如:熱阻式蒸鍍)透過該第二遮罩於各該電子傳輸膜13鍍上一電連接層14(例如:Ag層)。
如此,上述係已完整且清楚地說明本發明之鈣鈦礦太陽能電池模組的製造方法及鈣鈦礦太陽能電池模組;並且,經由上述可知本發明係具有下列之優點:
(1)習知技術利用雷射切割或機械切割將一鈣鈦礦太陽能電池模組分割成複數個太陽能電池單元,然而這樣的方式通常會造成各個太陽能電池單元受到不同程度及類型的破壞。本發明提出一種鈣鈦礦太陽能電池模組的製造方法,其係使用雷射切割於一透明基板101之上製作出複數個透明導電膜10F;接著,再使用同一個遮罩(亦即,第一遮罩)於該複數個透明導電膜10F之上依序地形成複數個電洞傳輸膜11、複數個主動層12、以及複數個電子傳輸膜13。最終,透過第二遮罩之使用而在各該電子傳輸膜13鍍上一電連接層14之後,即在單一透明基板101之上完成包含複數個太陽能電池單元之一鈣鈦礦太陽能電池模組1的製作。特別地,各該太陽能電池單元在製作過程中不會受到雷射切割或製程環境之不良影響,因而能夠保持優秀的光電轉換效率。
必須加以強調的是,上述之詳細說明係針對本發明可行實施例之具體說明,惟該實施例並非用以限制本發明之專利範圍,凡未脫離本發明技藝精神所為之等效實施或變更,均應包含於本案之專利範圍中。
<本發明>
1:鈣鈦礦太陽能電池模組
10:透明導電基板
101:透明基板
102:透明導電層
10G:切割道
10F:透明導電膜
11:電洞傳輸膜
12:主動層
13:電子傳輸膜
14:電連接層
S1-S6:步驟
121:第一材料膜層
122:第二材料
<習知>
1’:鈣鈦礦太陽能電池
11’:透明導電基板
111’:透明基板
112’:透明導電層
12’:電洞傳輸層
13’:主動層
14’:電子傳輸層
15’:金屬層
圖1顯示習知的一種鈣鈦礦太陽能電池之側面剖視圖;
圖2顯示本發明之一種鈣鈦礦太陽能電池模組的示意性剖視圖;
圖3顯示鈣鈦礦太陽能電池模組之一透明基板與一透明導電層的立體圖;
圖4顯示本發明之一種鈣鈦礦太陽能電池模組的製造方法的流程圖;
圖5顯示本發明之鈣鈦礦太陽能電池模組的示意性製造流程圖;
圖6顯示本發明之鈣鈦礦太陽能電池模組的示意性製造流程圖;
圖7顯示本發明之鈣鈦礦太陽能電池模組的示意性製造流程圖;
圖8顯示本發明之鈣鈦礦太陽能電池模組的示意性製造流程圖;
圖9顯示本發明之鈣鈦礦太陽能電池模組的示意性製造流程圖;
圖9A顯示二步製法之示意性製造流程圖;
圖10顯示本發明之鈣鈦礦太陽能電池模組的示意性製造流程圖;以及
圖11顯示本發明之鈣鈦礦太陽能電池模組的示意性製造流程圖。
S1-S6:步驟
Claims (10)
- 一種鈣鈦礦太陽能電池模組的製造方法,包括以下步驟: (1)提供一透明導電基板,其包括一透明基板與形成於該透明基板之上; (2)利用一雷射束對該透明導電層進行切割,以於該透明導電層之上製作出複數條切割道,進而利用該複數條切割道將所述透明導電層分成複數個透明導電膜; (3)將一第一遮罩置於該複數個透明導電膜之上,接著透過該第一遮罩於該複數個透明導電膜之上形成複數個電洞傳輸膜; (4)將該第一遮罩置於該複數個電洞傳輸膜之上,接著透過該第一遮罩於該複數個電洞傳輸膜之上形成複數個主動層; (5)將該第一遮罩置於該複數個主動層之上,接著透過該第一遮罩於該複數個主動層之上形成複數個電子傳輸膜;以及 (6)將一第二遮罩置於該複數個電子傳輸膜之上,接著透過該第二遮罩於該複數個電子傳輸膜之上形成複數個電連接層。
- 申請專利範圍第1項所述之鈣鈦礦太陽能電池模組的製造方法,其中,該透明導電層之製造材料可為下列任一者:氧化銦錫(Indium tin oxide, ITO)、氟摻雜二氧化錫(Fluorine-doped tin oxide, FTO)、氧化銦鋅(Indium zinc oxide, IZO)、鎵摻雜氧化鋅(Galliumdoped zinc oxide, GZO)、或鋁摻雜氧化鋅(Aluminum-doped zinc oxide, AZO)。
- 申請專利範圍第1項所述之鈣鈦礦太陽能電池模組的製造方法,其中,該電洞傳輸膜之製造材料主要為一氧化物,且該氧化物可為下列任一者:氧化鎳(NiO)或氧化鉬(MoO3 )。
- 申請專利範圍第1項所述之鈣鈦礦太陽能電池模組的製造方法,其中,該電子傳輸膜之製造材料可為下列任一者:富勒烯(C60 )、富勒烯衍生物PCBM、二氧化鈦(TiO2 )、或氧化鋅(ZnO)。
- 申請專利範圍第1項所述之鈣鈦礦太陽能電池模組的製造方法,其中,該主動層之化學結構式表示為Ax B1-x CDy E3-y ;其中,x為0至1之實數,y為0至3之實數,A與B皆可為銫離子(Cs+ )、CH3 NH3 + 或H2 N=CHNH2 + ,且D與E皆可為氯離子(Cl- )、溴離子(Br- )、或碘離子(I- )。
- 申請專利範圍第1項所述之鈣鈦礦太陽能電池模組的製造方法,其中,該電連接層之製造材料可為下列任一者:鋁(Al)、銀(Ag)、或金(Au)。
- 申請專利範圍第1項所述之鈣鈦礦太陽能電池模組的製造方法,其中,該步驟(2)與該步驟(3)之間更包括以下步驟: 對帶有該複數個透明導電膜之該透明基板執行一表面處理。
- 申請專利範圍第1項所述之鈣鈦礦太陽能電池模組的製造方法,其中,該步驟(3)與該步驟(4)之間更包括以下步驟: 對帶有該複數個電洞傳輸膜與該複數個透明導電膜之該透明基板執行一熱退火處理。
- 申請專利範圍第5項所述之鈣鈦礦太陽能電池模組的製造方法,其中,該步驟(4)包括以下詳細步驟: (41)將該第一遮罩置於該複數個電洞傳輸膜之上; (42)透過該第一遮罩於該複數個電洞傳輸膜之上形成複數個第一材料膜層,其中該第一材料膜層的製造材料為一金屬鹵化物,且該金屬鹵化物可為下列任一者:氯化鉛(PbCl2 )、溴化鉛(PbBr2 )、碘化鉛(PbI2 )、碘化錫(SnI2 )、或碘化鍺(GeI2 ); (43)透過該第一遮罩於該第一材料膜層之上形成複數個第二材料,其中該第二材料可為下列任一者:CsCl、CsBr、CsI、CH3 NH3 Cl、CH3 NH3 Br、CH3 NH3 I、或H2 N=CHNH2 I;以及 (44)各所述第一材料膜層與各所述第二材料反應生成各所述主動層。
- 一種鈣鈦礦太陽能電池模組,其係利用如申請專利範圍第1項至第9項之中任一項所述之鈣鈦礦太陽能電池模組的製造方法所製成。
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