MX2009009666A - Metodo para la produccion de una celula solar asi como celula solar producida utilizando dicho metodo. - Google Patents
Metodo para la produccion de una celula solar asi como celula solar producida utilizando dicho metodo.Info
- Publication number
- MX2009009666A MX2009009666A MX2009009666A MX2009009666A MX2009009666A MX 2009009666 A MX2009009666 A MX 2009009666A MX 2009009666 A MX2009009666 A MX 2009009666A MX 2009009666 A MX2009009666 A MX 2009009666A MX 2009009666 A MX2009009666 A MX 2009009666A
- Authority
- MX
- Mexico
- Prior art keywords
- solar cell
- production
- aluminum
- produced
- alloyed
- Prior art date
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Un método para la producción de una célula solar (11), se aplica una capa de aluminio lisa sobre el lado trasero (22) de un sustrato de célula solar (13). El aluminio es aleado en el sustrato de silicio por el efecto de la temperatura y forma un BSF de aluminio (24). A continuación se retira el aluminio remanente que no ha sido aleado en el silicio. El BSF de aluminio (24) es transparente a la luz.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007012277A DE102007012277A1 (de) | 2007-03-08 | 2007-03-08 | Verfahren zur Herstellung einer Solarzelle sowie damit hergestellte Solarzelle |
PCT/EP2008/001500 WO2008107094A2 (de) | 2007-03-08 | 2008-02-26 | Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2009009666A true MX2009009666A (es) | 2009-09-29 |
Family
ID=39678063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2009009666A MX2009009666A (es) | 2007-03-08 | 2008-02-26 | Metodo para la produccion de una celula solar asi como celula solar producida utilizando dicho metodo. |
Country Status (14)
Country | Link |
---|---|
US (1) | US8349637B2 (es) |
EP (1) | EP2135300B1 (es) |
JP (1) | JP2010520629A (es) |
KR (1) | KR20090118056A (es) |
CN (1) | CN101681952B (es) |
AT (1) | ATE545157T1 (es) |
AU (1) | AU2008224148B2 (es) |
CA (1) | CA2679857A1 (es) |
DE (1) | DE102007012277A1 (es) |
ES (1) | ES2380611T3 (es) |
IL (1) | IL200728A0 (es) |
MX (1) | MX2009009666A (es) |
TW (1) | TW200901492A (es) |
WO (1) | WO2008107094A2 (es) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009008786A1 (de) * | 2008-10-31 | 2010-06-10 | Bosch Solar Energy Ag | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
DE102008063558A1 (de) * | 2008-12-08 | 2010-06-10 | Gebr. Schmid Gmbh & Co. | Verfahren zur Bearbeitung der Oberfläche eines Wafers zur Herstellung einer Solarzelle und Wafer |
CN101771095B (zh) * | 2009-01-06 | 2012-03-21 | 台湾茂矽电子股份有限公司 | 太阳能电池 |
US8404970B2 (en) * | 2009-05-01 | 2013-03-26 | Silicor Materials Inc. | Bifacial solar cells with back surface doping |
DE102009044038A1 (de) * | 2009-09-17 | 2011-03-31 | Schott Solar Ag | Verfahren zur Herstellung eines Kontaktbereichs eines elektronischen Bauteils |
US8796060B2 (en) * | 2009-11-18 | 2014-08-05 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
TWI514608B (zh) * | 2010-01-14 | 2015-12-21 | Dow Global Technologies Llc | 具曝露式導電柵格之防溼光伏打裝置 |
EP2534693A2 (en) * | 2010-02-09 | 2012-12-19 | Dow Global Technologies LLC | Moisture resistant photovoltaic devices with improved adhesion of barrier film |
US8105869B1 (en) | 2010-07-28 | 2012-01-31 | Boris Gilman | Method of manufacturing a silicon-based semiconductor device by essentially electrical means |
KR101661768B1 (ko) | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
KR101699300B1 (ko) * | 2010-09-27 | 2017-01-24 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
KR101665722B1 (ko) * | 2010-09-27 | 2016-10-24 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR20120084104A (ko) | 2011-01-19 | 2012-07-27 | 엘지전자 주식회사 | 태양전지 |
CN103493214B (zh) * | 2011-01-26 | 2016-01-20 | 胜高股份有限公司 | 太阳能电池用晶片及其制备方法 |
DE102011086302A1 (de) * | 2011-11-14 | 2013-05-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer metallischen Kontaktierungsstruktur auf einer Oberfläche einer Halbleiterstruktur und photovoltaische Solarzelle |
KR101776874B1 (ko) | 2011-12-21 | 2017-09-08 | 엘지전자 주식회사 | 태양 전지 |
US8486747B1 (en) | 2012-04-17 | 2013-07-16 | Boris Gilman | Backside silicon photovoltaic cell and method of manufacturing thereof |
KR101871273B1 (ko) | 2012-05-11 | 2018-08-02 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR102018651B1 (ko) * | 2013-04-03 | 2019-09-05 | 엘지전자 주식회사 | 태양 전지 |
CN103346188B (zh) * | 2013-06-05 | 2016-01-06 | 国电光伏有限公司 | 一种晶硅太阳能电池及其制备方法 |
CN103618007A (zh) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | 一种新型双面受光太阳电池 |
US10382577B2 (en) * | 2015-01-30 | 2019-08-13 | Microsoft Technology Licensing, Llc | Trending topics on a social network based on member profiles |
KR20200075640A (ko) | 2018-12-18 | 2020-06-26 | 엘지전자 주식회사 | 텐덤 태양전지 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58128775A (ja) * | 1982-01-28 | 1983-08-01 | Toshiba Corp | 太陽電池の製造方法 |
US4703553A (en) * | 1986-06-16 | 1987-11-03 | Spectrolab, Inc. | Drive through doping process for manufacturing low back surface recombination solar cells |
DE3815512C2 (de) * | 1988-05-06 | 1994-07-28 | Deutsche Aerospace | Solarzelle und Verfahren zu ihrer Herstellung |
JPH08330611A (ja) * | 1995-03-30 | 1996-12-13 | Sharp Corp | シリコン太陽電池セルとその製造方法 |
US6081017A (en) * | 1998-05-28 | 2000-06-27 | Samsung Electronics Co., Ltd. | Self-biased solar cell and module adopting the same |
DE19910816A1 (de) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
JP3557148B2 (ja) * | 2000-02-21 | 2004-08-25 | 三洋電機株式会社 | 太陽電池モジュール |
JP3910072B2 (ja) * | 2002-01-30 | 2007-04-25 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
JP2004006565A (ja) * | 2002-04-16 | 2004-01-08 | Sharp Corp | 太陽電池とその製造方法 |
JP4232597B2 (ja) | 2003-10-10 | 2009-03-04 | 株式会社日立製作所 | シリコン太陽電池セルとその製造方法 |
US20050252544A1 (en) * | 2004-05-11 | 2005-11-17 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
EP1739690B1 (en) * | 2004-07-01 | 2015-04-01 | Toyo Aluminium Kabushiki Kaisha | Paste composition and solar cell element employing same |
JP2006339499A (ja) * | 2005-06-03 | 2006-12-14 | Sharp Corp | 太陽電池の製造方法 |
-
2007
- 2007-03-08 DE DE102007012277A patent/DE102007012277A1/de not_active Withdrawn
-
2008
- 2008-02-26 CA CA002679857A patent/CA2679857A1/en not_active Abandoned
- 2008-02-26 EP EP08716040A patent/EP2135300B1/de active Active
- 2008-02-26 KR KR1020097018698A patent/KR20090118056A/ko not_active Application Discontinuation
- 2008-02-26 ES ES08716040T patent/ES2380611T3/es active Active
- 2008-02-26 JP JP2009552097A patent/JP2010520629A/ja active Pending
- 2008-02-26 AT AT08716040T patent/ATE545157T1/de active
- 2008-02-26 WO PCT/EP2008/001500 patent/WO2008107094A2/de active Application Filing
- 2008-02-26 MX MX2009009666A patent/MX2009009666A/es active IP Right Grant
- 2008-02-26 AU AU2008224148A patent/AU2008224148B2/en not_active Ceased
- 2008-02-26 CN CN2008800072375A patent/CN101681952B/zh not_active Expired - Fee Related
- 2008-03-07 TW TW097108237A patent/TW200901492A/zh unknown
-
2009
- 2009-09-03 IL IL200728A patent/IL200728A0/en unknown
- 2009-09-04 US US12/554,592 patent/US8349637B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200901492A (en) | 2009-01-01 |
WO2008107094A2 (de) | 2008-09-12 |
JP2010520629A (ja) | 2010-06-10 |
EP2135300B1 (de) | 2012-02-08 |
WO2008107094A3 (de) | 2008-12-11 |
EP2135300A2 (de) | 2009-12-23 |
US20100012185A1 (en) | 2010-01-21 |
CN101681952B (zh) | 2013-07-17 |
KR20090118056A (ko) | 2009-11-17 |
CA2679857A1 (en) | 2008-09-12 |
AU2008224148A1 (en) | 2008-09-12 |
ATE545157T1 (de) | 2012-02-15 |
US8349637B2 (en) | 2013-01-08 |
AU2008224148B2 (en) | 2012-10-11 |
DE102007012277A1 (de) | 2008-09-11 |
IL200728A0 (en) | 2010-05-17 |
ES2380611T3 (es) | 2012-05-16 |
CN101681952A (zh) | 2010-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MX2009009666A (es) | Metodo para la produccion de una celula solar asi como celula solar producida utilizando dicho metodo. | |
WO2011111932A3 (en) | Method for manufacturing graphene, transparent electrode and active layer comprising the same, and display, electronic device, optoelectronic device, battery, solar cell, and dye-sensitized solar cell including the electrode and the active layer | |
WO2010094048A3 (en) | Solar cell absorber layer formed from equilibrium precursor(s) | |
MY173413A (en) | High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers | |
EP2333844A3 (en) | Process of Making Thin Film Solar Cell | |
WO2011122853A3 (ko) | 태양광 발전장치 및 이의 제조방법 | |
WO2008115326A3 (en) | Back reflector for use in photovoltaic device | |
WO2011025216A3 (ko) | 그래핀 박막과 나노 입자를 이용한 광검출기 및 그 제조 방법 | |
WO2008140224A3 (en) | Method, apparatus and system of manufacturing solar cell | |
WO2011092402A3 (fr) | Cellule photovoltaïque comprenant un film mince de passivation en oxyde cristallin de silicium et procédé de réalisation | |
TW200729528A (en) | Aluminum paste composition and solar cell element employing the same | |
IN2014DN08106A (es) | ||
WO2008147113A3 (en) | High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same | |
WO2012100788A8 (en) | Photovoltaic concentrator receiver and its use | |
WO2011053025A3 (ko) | 태양전지 및 이의 제조방법 | |
WO2009084851A3 (en) | Conductive glass for dye sensitive solar cell and method of preparing the same | |
WO2011040780A3 (ko) | 태양광 발전장치 및 이의 제조방법 | |
WO2011040778A3 (ko) | 태양광 발전장치 및 이의 제조방법 | |
EP2237321A3 (en) | High efficiency colored solar cell and manufacturing method thereof | |
WO2011131388A3 (de) | Verfahren zur herstellung einer solarzelle sowie nach diesem verfahren hergestellte solarzelle | |
WO2008107156A3 (de) | Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle | |
WO2011002212A3 (ko) | 태양광 발전장치 및 이의 제조방법 | |
WO2013017526A3 (de) | Verfahren zur herstellung einer solarzelle sowie solarzelle | |
WO2009109445A3 (en) | Photovoltaic devices with high-aspect-ratio nanostructures | |
IN2012DN01227A (es) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG | Grant or registration |