TW200901492A - Method for the manufacture of a solar cell and the resulting solar cell - Google Patents
Method for the manufacture of a solar cell and the resulting solar cell Download PDFInfo
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- TW200901492A TW200901492A TW097108237A TW97108237A TW200901492A TW 200901492 A TW200901492 A TW 200901492A TW 097108237 A TW097108237 A TW 097108237A TW 97108237 A TW97108237 A TW 97108237A TW 200901492 A TW200901492 A TW 200901492A
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- aluminum
- substrate
- solar cell
- bsf
- coating
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 66
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000005275 alloying Methods 0.000 claims description 13
- 239000006117 anti-reflective coating Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000004411 aluminium Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 13
- 229910052709 silver Inorganic materials 0.000 description 13
- 239000004332 silver Substances 0.000 description 13
- 229910052759 nickel Inorganic materials 0.000 description 10
- 238000011161 development Methods 0.000 description 8
- 230000018109 developmental process Effects 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- YPQJHZKJHIBJAP-UHFFFAOYSA-N [K].[Bi] Chemical compound [K].[Bi] YPQJHZKJHIBJAP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Description
200901492 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種具有BSF(背面場）塗層之太陽能電池 的製造方法，該太陽能電池有利地包含矽或矽基板，本發 明又係關於使用此種方法所製造之太陽能電池。 【先前技術】 • 習知之太陽能電池之製造包含下文中以彙總形式所描述 的一系列方法步驟。基礎通常係藉由單晶或多晶卜Si晶圓 f來提供’該等晶圓通過蝕刻方法進行表面結構化以改良吸 收特性。在單晶矽的情況中，該蝕刻方法係使用氫氧化鈉 或虱氧化鉀》谷液與異丙醇之混合物來進行。多晶石夕係使用 虱氟酸及硝酸溶液進行餘刻。接著進行進—步餘刻清洗順 序以便為隨後的擴散過程提供最佳表面準備。在該過程 中，藉由使磷以大約0.5 μιη之深度擴散而在矽中產生一p_ η接面。該p-n接面分離由光形成的電荷載子。為產生該p_n 接面，將晶圓在一爐中在通常為氣體混合物或水溶液之一 〇 磷源的存在下加熱到大約800T：至95〇t：。該磷穿透該珍表 面。與正導電性之換雜觸的基極相反，該摻雜磷之塗層為 負導電性。在該過程中，於該表面上形成一磷玻璃，其在 隨後步驟中藉由用HF餘刻而移除。為了減少反射及用於鈍 化’隨後施覆一大略為8〇 !1111厚、通常包含siN:H之塗層到 該石夕表面。接著將金屬接點施覆到正面（銀）及背面（金或 銀）。為了產生所謂的BSF(背面場），最好將鋁，在該過程 中為施覆到晶圓背面之部分鋁，在隨後的燒製步驟中合金 129410.doc 200901492 化至石夕中。 【發明内容】 本發明之_係㈣供-種上料岐 陽能電池’其能避免先前技術的缺點，及其中特定言之： 進一步提咼太陽能電池之效率。 此問題藉由—種具有請求項1之特徵的方法以及一種且 有請求項21之特徵的太陽能電池獲得解決。本發明之有利
及較佳開發方案形成進-步請求項之題材及在下文中將更 詳細地解釋。藉由《”使得各請求項之内容成為本說 明内容之部分。 根據本發明，以先將銘或TCO施覆到該基板的方式將一 BSF塗層施覆到线能電池基板之背自，更特定言之該基 板包切。隨後將紹或其部分合金化至該基板中，且戶^ 得之BSF塗層係透明的或者不會引起遮蔽。此製造方法及 以其所產生之BSF的I點係其亦可產纟雙側或者所謂㈣ 面太陽能電池，其也可從背面照射而不會有BSF所引起的 遮蔽。特定而t，以此方式可產生大面積以及小面積或局 部BSF。亦可對鋁或TC◦使用不同的施覆方法，下文中將 說明該等方法。最後，此種方法係相當有利，I因此可產 生與其他高效率太陽能電池相比有利的電池。經由對bsf 使用鋁來代替硼，可使用一種更為有利的及可容易控制之 方法，尤其其中鋁的合金化溫度比硼低得多及特定而言係 小於9001。因此，舉例而言，亦可使用多晶矽，其在與 硼進行合金化之情况下由於遠遠高於1〇〇〇t：之高溫而可能 129410.doc 200901492 被不利地改質。 在本發明之一開發方案中，可將鋁或TCO以點狀或小面 積形式施覆到該基板或該基板之背面。因此，可以點狀方 式或以小面積產生數個BSF。該等點或小面積最好係沿著 線條定位，其特定而言具有相同間距。其較佳係以均勻格 或柵之方式被施覆，以致可於BSF上產生均勻的電接觸。 隨後在該BSF或該等小面積上及特定而言係沿著該等線 條’施覆例如錄或銀或其組合之金屬接點。 在本發明之一稍微不同的開發方案中，將鋁施覆到基板 及因此產生一 BSF或BSF之導電區域可以上述之線條方式 進行。此處再次有利的係該等線條相互平行且彼此間間距 相同。 在本發明之又另一修改開發方案中，鋁可以面或大面積 方式施覆到基板的背面及特別地可覆蓋整個背面。顯然此 處基本上可提供不同的塗層厚度或塗層厚度梯度，但最好 係施覆一大略均勻厚度之塗層。如同上述線性地施覆鋁之 情况，此處再次係產生線性鋁_BSF ,在隨後的步驟中可施 覆金屬接點及特別地再次為線性金屬接點。 對於將鋁施覆到基板存在許多可能性。在一種可能性 中，其可藉由網印法或喷墨法來施覆。其還可以液體或糊 狀形式來施覆，例如以含鋁液體或凝膠。根據另—種可能 性’鋁可以與其他金屬塗層大致相同之方式，冑由濺鍍、 蒸發、CVD方法或合金化來施覆。 可提供一加熱方法於將銘合金化至基板或基板矽材料 129410.doc 200901492 中。其最好係不同於先前紹施覆所使用或所發生之加熱。 以此方式該方法可制_ μ # 子於/、之預期目的更好地被控制或最佳 化。 在將紹合金化至基板切材料中之後’將部分的剩餘銘 移除。特定而言’只將未經合金化至基板中，或仍為純 鋁及因此形成其本身或一可經區分之塗層的紹移除。該 未經合金化之料被完全移除，或者例如為了實現更好的〆 後續電接觸及施覆電接點，可僅經部分移除或以線性形式 留下。另-選擇為可移除所有未經合金化的銘。有利地， 該鋁係藉由如本身已為吾人熟知之蝕刻來移除。 在本發明方法之-開發方案中，在銘去除之後可接著對 基板之至少該背面進行鈍化。有利地，將—抗反射塗層至 少施覆到基板背面。若該太陽能電池之背面 射’則此料別_。 _ 在上述的鋁去除或部分去除之後，在製造太陽能電池時 可藉由使磷擴散到η-矽中而在基板上產生一 ρ_η接面。 亦可將金屬或鋁按預製結構施覆到基板上，特別是對於 隨後在基板背面上建立電接觸。f亥等結才冓尤其係產生於上 述抗反射塗層上，該產生係以機械方式或例如藉由雷射加 工而進仃。在所製得溝槽中，可有利地按上述線性形式引 入鋁，更特定而言係引入到—下層鋁_BSF$。該後者的鋁 則不被移除。對此有利地是以線性形式施覆一背面、極佳 導電性之電接點’特定而言係一銀接點。 該等及進一步特徵可從諸請求項、說明以及附圖推測出 129410.doc 200901492 來，單獨或呈次組合形式的個別特徵都可實施於本發明之 實紅例及其他領域中，及可代表此處中請保護之有利的 可獨立保護構造。I申請案細分為個別段落副標題並不 限制下面所作出之陳述的一般有效性。 下文中相對於隨附示意圖描述本發明之實施例。 【實施方式】
Ο 圖1展示一太陽能電池，其包含一ρ_摻雜矽基板13。將 一例如SiN:H的抗反射塗層17施覆到基板13之正面15及對 下層基板13進行未圖示的鈍化。在正面15之上將接點施覆 到該抗反射塗層17之溝槽中，及其包含一下部鎳接點19及 施覆至後者之銀接點2 0。該抗反射塗層丨7中用於接點J 9 及20之對應溝槽可藉由蝕刻，或者藉由機械加工或雷射加 工來產生。鎳接點19可藉由所謂的無電極電鍍來施覆，而 銀接點20可用一 LIP方法來施覆。接點19及2〇為線性，且 係直接置於基板13之下層矽塗層之上。 自該矽基板1 3之下方將一表面鋁背面場或鋁bsf 24施覆 到太陽能電池11之背面22。如上文所述，可使用網印方法 或其他某種方法來施覆鋁。在合金化或燒進該矽之前，可 進行一中間乾燥步驟。合金化可藉由用光照射或藉由加熱 而在一爐内進行_。 在根據圖1之太陽能電池11的案例中，將未被合金化至 石夕中之表面施覆的純鋁有利地經由一 I虫刻步驟而移除。主 要優點係鋁-BSF 24中留下的AlSi合金是透明的，及以此 方式可建立一雙面太陽能電池11，其即使係在光入射的情 129410.doc -10- 200901492 况下亦能作用於背面22。進一步的優點係經由使用鋁，可 避免摻入硼或硼本身。因此，鋁可比硼更容易處理，尤其 係透過較低的施覆及合金化溫度。又另一優點係上述之將 其與透明導電氧化物（TCO)結合使用的可能性，即一般而 言此種TCO可用來代替鋁。 將另一抗反射塗層26施覆到鋁_BSF 24。再次引入一接 點到該塗層26 ,其可有利地以與引入至正面15相同之方式 引入，或先引入一鎳接點29接著再引入一銀接點3〇。
圖2展示使用另一種方法所製造之另一種太陽能電池 111。將一抗反射塗層丨17施覆到矽基板113之正面115，與 相對於圖1所描述的大致相同。其經格柵狀圖案分離或向 下敞開至該基板113，並先施覆鎳接點丨19然後再施覆銀接 點120。因此，舉例而言一鎳接點可藉由化學金屬化來施 覆。 不同於圖1所示，將鋁單獨以點狀方式施覆到背面122, 即以小面積或線條而不以如圖！之大面積方式。然而，銘 施覆係如前文所述進行。隨後及例如在合金化之後及與相 對於圖1描述的大致相@，將過剩銘或純掉，而留 下多個小面積的鋁背面場124。在於鋁挪124上背面施 覆抗反射塗層126時’製得一結構或將紹-BSF 124打開， 舉例而言藉由蝕刻或機械加工。然後，如前文所描述，先 鈿覆鎳接點129然後再對其施覆一銀接點13〇。根據圖2 之太陽能電池U1中的鋁挪124是透明的。其同樣局限 於比圖1之太陽能電池u所具有者更小的表面積。 129410.doc 11 200901492 最後，圖3展示另一太陽能電池211，其再次具有稍微不 同之構造。如前文所描述，於正面215上同樣具有一抗反 射塗層2 17、下部鎳接點219及上部銀接點22〇。然而，於 背面222上顯然地按照前文所描述之方式，對線性或點狀 鋁BSF 224進行鋁施覆，並合金化至矽中。然而，與前文 描述的不同，不將純鋁移除，其現在取而代之形成根據圖 1或2之下部鎳接點的替代，即作為鋁接點232及對其施覆 一下部銀接點23〇。圖3之太陽能電池2丨丨與圖2之太陽能電 池111的差別係因此在合金化鋁以產生鋁_bsf之後，不將 剩餘的純鋁移除，而係使其取而代之形成下部鎳接點的替 代。因此，與根據圖i之太陽能電池丨丨的案例大致相同， 太陽能電池2 11可相當容易地製造。 在施覆圖中所示之不同塗層之前，例如，施覆鋁_BSF《 銘’可進行先前基板處理。因此，舉例而言，為了最佳化 表面及消除可見損傷，可將一矽晶圓結構化及/或蝕刻。 對於射極形成同樣也存在磷摻雜。對於太陽能電池之處理 亦可存在另一方法步驟，例如韌化。 在所描述之本發明太陽能電池的情況中，可使用多晶矽 材料。运在先前是不可能的，因為與硼合金化需要較高溫 度’此將損壞多晶發。對於㈣合金化，溫度可保持在遠 遠低於9G(TC。因’在本發明之料内，亦可將多晶石夕 材料用於基板。亦可在經暴露的銀接點上進行作為電端子 的焊接。 【圖式簡單說明】 129410.doc -12- 200901492 圖1係穿過根據本發明方法之坌 、第—開發方案 陽能電池的一截面’該太陽能電池 乂之太 '、有一表面銘背 且純鋁已經移除。 牙面~ ’ 圖2係根據圖1之太陽能電池的篦_ μ杜 J乐一開發方案，其且有— 線性鋁背面場，其中純鋁再次經移除。 ' 圖3係類似於圖2之太陽能電池的箆★ J乐二開發方案，但其中 純鋁並未被移除。 【主要元件符號說明】 Γ 11 、 111 、 211 13 、 113 、 213 15 、 115 、 215 17 、 117 、 217 19 、 119 、 219 20 ' 120 > 220 22 、 122 、 222 24 ' 124 ' 224 26 ' 126 ' 226 29 ' 129 30 、 130 、 230 232 太陽能電池 石夕基板 基板正面 抗反射塗層 鎳接點 銀接點 背面 鋁-BSF 抗反射塗層 鎳接點 銀接點 鋁接點 129410.doc -13 -
Claims (1)
- 200901492 十、申請專利範圍： 1. 一種製造具有一 BSF塗層之太陽能電池（丨！，n丨，21丨）之 方法’其中經由將鋁或TCO施覆到太陽能電池基板（13， 113，213)及隨後合金化至該基板（13，113，213)中而將 一 BSF塗層（24，124，224)施覆到該太陽能電池基板 (13，113，213)的背面（22，122，222)()，該 BSF 塗層 ' (24，124，224)對光係透明的。 2. 如請求項1之方法，其中鋁或TCO係以小面積施覆到該基 板（113，213)。 3. 如請求項2之方法’其中提供以小面積方式局部產生數 個BSF(124，224)，該等點或小面積係沿著直線定位， 隨後對其施覆線性金屬接點（129，130，232，» 4. 如請求項2之方法，其中該等線係等距間隔開。 5. 如請求項1之方法，其中TCO或鋁係線性地施覆到該基板 (113，213)。 6. 如請求項i之方法，其中對於一展開的bsf(24)，鋁係以 ϋ 展開方式施覆到該基板（13)()。 7·如請求項6之方法，其中該基板之一側的整個表面經覆 蓋。 « 8. 如請求項1之方法，其中該鋁或TC0係藉由網印方法施覆 到該基板（13， 113，213)。 9. 如請求項〗之方法，其中該鋁或TC〇係以液體或糊狀形式 施覆。 10·如請求項9之方法，其中該鋁或TCO係以含鋁液體或凝膠 129410.doc 200901492 之形式施覆。 U·如請求項1之方法，其中該鋁或TC0係藉由以下方法之群 的其中之一施覆：濺鍍、蒸發、CVD方法或合金化。 12·如凊求項1至11中任一項之方法，其中該鋁之合金化至 "亥基板（13，113，213)或該基板矽材料中係透過與鋁施 覆分開之加熱而進行。 13.如„月求項丨之方法，其中在合金化至該基板（Η，〖Η)中 之該步驟之後將鋁移除，其中僅將來自一鋁塗層之鋁或 純紹及未被合金化至該基板中單純鋁移除。 14 ·如凊求項丨3之方法，其中將所有未被合金化至該矽材料 或未與該碎材料合金化之铭移除。 1 5·如請求項13之方法，其中該鋁係藉由蝕刻移除。 16.如請求項13之方法，其中在鋁去除之後進行鈍化，且接 著將一抗反射塗層（26，126，226)施覆到基板（13， !13，213)之背面（22，122， 222)。 17·如請求項13之方法，其中在鋁去除之後，藉由使磷擴散 入該基板（13，113，213)之η-矽中而產生一p_n接面。 1 8.如請求項1之方法’其中該鋁係施覆於一穿過一抗反射 塗層（26 ’ 126，226)深達該基板（13，113，213)上之實際 基板的0預製結構中。 1 9.如請求項丨8之方法，其中該鋁係藉由網印方法施覆且不 進行隨後的鋁去除。 20.如請求項！之方法，其中該基板（13，113，213)包含多晶 石夕。 129410.doc 200901492 21. —種太陽能電池（11，111，211)，其係由一（）經如請求項 1之方法處理的基板（13，113，213)所製成。129410.doc
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102009008786A1 (de) * | 2008-10-31 | 2010-06-10 | Bosch Solar Energy Ag | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
| DE102008063558A1 (de) * | 2008-12-08 | 2010-06-10 | Gebr. Schmid Gmbh & Co. | Verfahren zur Bearbeitung der Oberfläche eines Wafers zur Herstellung einer Solarzelle und Wafer |
| CN101771095B (zh) * | 2009-01-06 | 2012-03-21 | 台湾茂矽电子股份有限公司 | 太阳能电池 |
| US20100275995A1 (en) * | 2009-05-01 | 2010-11-04 | Calisolar, Inc. | Bifacial solar cells with back surface reflector |
| DE102009044038A1 (de) | 2009-09-17 | 2011-03-31 | Schott Solar Ag | Verfahren zur Herstellung eines Kontaktbereichs eines elektronischen Bauteils |
| US8796060B2 (en) * | 2009-11-18 | 2014-08-05 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| TWI514608B (zh) * | 2010-01-14 | 2015-12-21 | Dow Global Technologies Llc | 具曝露式導電柵格之防溼光伏打裝置 |
| CN102812558B (zh) * | 2010-02-09 | 2015-09-09 | 陶氏环球技术有限责任公司 | 具有改善的屏障膜粘附的抗湿光伏器件 |
| US8105869B1 (en) | 2010-07-28 | 2012-01-31 | Boris Gilman | Method of manufacturing a silicon-based semiconductor device by essentially electrical means |
| KR101661768B1 (ko) * | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
| KR101699300B1 (ko) * | 2010-09-27 | 2017-01-24 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
| KR101665722B1 (ko) * | 2010-09-27 | 2016-10-24 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR20120084104A (ko) * | 2011-01-19 | 2012-07-27 | 엘지전자 주식회사 | 태양전지 |
| KR101528864B1 (ko) * | 2011-01-26 | 2015-06-15 | 가부시키가이샤 사무코 | 태양전지용 웨이퍼 및 그 제조 방법 |
| DE102011086302A1 (de) * | 2011-11-14 | 2013-05-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer metallischen Kontaktierungsstruktur auf einer Oberfläche einer Halbleiterstruktur und photovoltaische Solarzelle |
| KR101776874B1 (ko) | 2011-12-21 | 2017-09-08 | 엘지전자 주식회사 | 태양 전지 |
| US8486747B1 (en) | 2012-04-17 | 2013-07-16 | Boris Gilman | Backside silicon photovoltaic cell and method of manufacturing thereof |
| KR101871273B1 (ko) | 2012-05-11 | 2018-08-02 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR102018651B1 (ko) * | 2013-04-03 | 2019-09-05 | 엘지전자 주식회사 | 태양 전지 |
| CN103346188B (zh) * | 2013-06-05 | 2016-01-06 | 国电光伏有限公司 | 一种晶硅太阳能电池及其制备方法 |
| CN103618007A (zh) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | 一种新型双面受光太阳电池 |
| US10382577B2 (en) * | 2015-01-30 | 2019-08-13 | Microsoft Technology Licensing, Llc | Trending topics on a social network based on member profiles |
| KR20200075640A (ko) * | 2018-12-18 | 2020-06-26 | 엘지전자 주식회사 | 텐덤 태양전지 |
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| JPS58128775A (ja) * | 1982-01-28 | 1983-08-01 | Toshiba Corp | 太陽電池の製造方法 |
| US4703553A (en) * | 1986-06-16 | 1987-11-03 | Spectrolab, Inc. | Drive through doping process for manufacturing low back surface recombination solar cells |
| DE3815512C2 (de) * | 1988-05-06 | 1994-07-28 | Deutsche Aerospace | Solarzelle und Verfahren zu ihrer Herstellung |
| JPH08330611A (ja) * | 1995-03-30 | 1996-12-13 | Sharp Corp | シリコン太陽電池セルとその製造方法 |
| US6081017A (en) | 1998-05-28 | 2000-06-27 | Samsung Electronics Co., Ltd. | Self-biased solar cell and module adopting the same |
| DE19910816A1 (de) | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
| JP3557148B2 (ja) * | 2000-02-21 | 2004-08-25 | 三洋電機株式会社 | 太陽電池モジュール |
| JP3910072B2 (ja) * | 2002-01-30 | 2007-04-25 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
| JP2004006565A (ja) * | 2002-04-16 | 2004-01-08 | Sharp Corp | 太陽電池とその製造方法 |
| JP4232597B2 (ja) | 2003-10-10 | 2009-03-04 | 株式会社日立製作所 | シリコン太陽電池セルとその製造方法 |
| US20050252544A1 (en) * | 2004-05-11 | 2005-11-17 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
| WO2006003830A1 (ja) | 2004-07-01 | 2006-01-12 | Toyo Aluminium Kabushiki Kaisha | ペースト組成物およびそれを用いた太陽電池素子 |
| JP2006339499A (ja) * | 2005-06-03 | 2006-12-14 | Sharp Corp | 太陽電池の製造方法 |
-
2007
- 2007-03-08 DE DE102007012277A patent/DE102007012277A1/de not_active Withdrawn
-
2008
- 2008-02-26 KR KR1020097018698A patent/KR20090118056A/ko not_active Application Discontinuation
- 2008-02-26 AU AU2008224148A patent/AU2008224148B2/en not_active Ceased
- 2008-02-26 EP EP08716040A patent/EP2135300B1/de active Active
- 2008-02-26 JP JP2009552097A patent/JP2010520629A/ja active Pending
- 2008-02-26 ES ES08716040T patent/ES2380611T3/es active Active
- 2008-02-26 MX MX2009009666A patent/MX2009009666A/es active IP Right Grant
- 2008-02-26 WO PCT/EP2008/001500 patent/WO2008107094A2/de active Application Filing
- 2008-02-26 CN CN2008800072375A patent/CN101681952B/zh not_active Expired - Fee Related
- 2008-02-26 CA CA002679857A patent/CA2679857A1/en not_active Abandoned
- 2008-02-26 AT AT08716040T patent/ATE545157T1/de active
- 2008-03-07 TW TW097108237A patent/TW200901492A/zh unknown
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- 2009-09-03 IL IL200728A patent/IL200728A0/en unknown
- 2009-09-04 US US12/554,592 patent/US8349637B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| ATE545157T1 (de) | 2012-02-15 |
| AU2008224148B2 (en) | 2012-10-11 |
| IL200728A0 (en) | 2010-05-17 |
| JP2010520629A (ja) | 2010-06-10 |
| CN101681952A (zh) | 2010-03-24 |
| EP2135300A2 (de) | 2009-12-23 |
| WO2008107094A3 (de) | 2008-12-11 |
| MX2009009666A (es) | 2009-09-29 |
| CN101681952B (zh) | 2013-07-17 |
| US8349637B2 (en) | 2013-01-08 |
| CA2679857A1 (en) | 2008-09-12 |
| US20100012185A1 (en) | 2010-01-21 |
| KR20090118056A (ko) | 2009-11-17 |
| DE102007012277A1 (de) | 2008-09-11 |
| EP2135300B1 (de) | 2012-02-08 |
| ES2380611T3 (es) | 2012-05-16 |
| WO2008107094A2 (de) | 2008-09-12 |
| AU2008224148A1 (en) | 2008-09-12 |
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