CN103618007A - 一种新型双面受光太阳电池 - Google Patents
一种新型双面受光太阳电池 Download PDFInfo
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- 238000002161 passivation Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 208000025174 PANDAS Diseases 0.000 description 1
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 1
- 240000004718 Panda Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004446 light reflex Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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Abstract
本发明公开了一种新型双面受光太阳电池，包括正面电极、正面减反射层、正面钝化层、PN结和P型硅衬底，在所述P型硅衬底背面还设有背面钝化层、背面减反射层和背面电极。本发明减少现有双面电池制备工序，更有利于产业化的发展。
Description
技术领域
本发明涉及一种太阳电池，具体涉及一种新型双面受光太阳电池。
背景技术
目前，随着光伏行业竞争的日益激烈和市场对高品质光伏产品的迫切要求，提高太阳能电池转化效率，成为太阳能电池技术发展的首要任务。现有商业化电池大部分为单面受光电池，其背面使用铝背场进行钝化，形成高低电场提高电池开路电压，形成背面光反射面提高电流。但由于铝背场的重掺杂效率导致效率提升有限，且背面铝背场阻挡光的射入从而无法充分发电。现有英利集团量产的“Panda”电池也采用双面受光技术，但其采用正面扩磷，背面扩硼的方法，双面印刷银电极来制备双面受光电池，此种双面电池涉及到双面不同类型的扩散以及多种繁琐的工序，给产业化的进展带来一定阻碍。
发明内容
本发明所要解决的技术问题是提供一种新型双面受光太阳电池，减少现有双面电池制备工序，更有利于产业化的发展。
本发明解决技术问题所采用的技术方案是：一种新型双面受光太阳电池，包括正面电极、正面减反射层、正面钝化层、PN结和P型硅衬底，在所述P型硅衬底背面还设有背面钝化层、背面减反射层和背面电极。
作为一种优选，所述正面钝化层和背面钝化层为SiO2或Al2O3，其厚度为5nm-30nm之间。
本发明背面钝化层和背面减反射层不需要使用激光进行开槽或者开孔处理，直接使用能够穿透钝化层和减反射层叠的电极浆料，烧结后形成接触。其主要工艺如下：将硅衬底经过常规工艺去损伤制绒后，在850℃左右进行扩散制备PN结，方块电阻在80ohm/sqr左右的发射极。对扩散后的硅片进行背面抛光后去表面PSG和边缘隔离。使用热氧化（或者原子层沉积）的方法，在电池正反面生长一层约15nm的SiO2（或者Al2O3），接下来在电池背面沉积一层80nm左右的氮化硅膜层，在电池正面沉积一层80nm的氮化硅减反射膜层。将双面镀膜的硅片进行背面电极印刷和正面银电极印刷，烧结后完成双面受光电池。
本发明的有益效果是: 对电池进行双面钝化，提高了电池的转化效率，在电池正面受光的同时，电池背面可以接受来自地面的漫反射光，且减少现有双面电池制备工序，更有利于产业化的发展。
附图说明
图1为本发明实施例的组织结构示意图。
下面结合附图对本发明做进一步说明。
具体实施方式
如附图1所示，一种新型双面受光太阳电池，包括正面电极1、正面减反射层2、正面钝化层3、PN结4和P型硅衬底5，在P型硅衬底5背面还设有背面钝化层6、背面减反射层7和背面电极8。正面钝化层3和背面钝化层6均为SiO2，其厚度为15nm。
Claims (2)
1.一种新型双面受光太阳电池，包括正面电极（1）、正面减反射层（2）、正面钝化层（3）、PN结（4）和P型硅衬底（5），其特征在于：在所述P型硅衬底（5）背面还设有背面钝化层（6）、背面减反射层（7）和背面电极（8）。
2.如权利要求1所述的一种新型双面受光太阳电池，其特征在于：所述正面钝化层（3）和背面钝化层（6）为SiO2或Al2O3，其厚度为5nm-30nm之间。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113330583A (zh) * | 2018-11-27 | 2021-08-31 | 晶澳太阳能有限公司 | 晶体硅太阳能电池及其制备方法、光伏组件 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100012185A1 (en) * | 2007-03-08 | 2010-01-21 | Gebr. Schmid Gmbh & Co. | Method for the Manufacture of a Solar Cell and the Resulting Solar Cell |
| CN102364692A (zh) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | 双面受光的全钝化结构晶体硅太阳能电池及其制作方法 |
| CN203103335U (zh) * | 2012-12-26 | 2013-07-31 | 广东爱康太阳能科技有限公司 | 一种双面受光太阳电池 |
| CN203491268U (zh) * | 2013-10-18 | 2014-03-19 | 浙江晶科能源有限公司 | 一种新型双面受光太阳电池 |
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- 2013-10-18 CN CN201310489049.3A patent/CN103618007A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100012185A1 (en) * | 2007-03-08 | 2010-01-21 | Gebr. Schmid Gmbh & Co. | Method for the Manufacture of a Solar Cell and the Resulting Solar Cell |
| CN102364692A (zh) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | 双面受光的全钝化结构晶体硅太阳能电池及其制作方法 |
| CN203103335U (zh) * | 2012-12-26 | 2013-07-31 | 广东爱康太阳能科技有限公司 | 一种双面受光太阳电池 |
| CN203491268U (zh) * | 2013-10-18 | 2014-03-19 | 浙江晶科能源有限公司 | 一种新型双面受光太阳电池 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113330583A (zh) * | 2018-11-27 | 2021-08-31 | 晶澳太阳能有限公司 | 晶体硅太阳能电池及其制备方法、光伏组件 |
| CN113330583B (zh) * | 2018-11-27 | 2023-07-07 | 晶澳太阳能有限公司 | 晶体硅太阳能电池及其制备方法、光伏组件 |
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