CN101681952A - 太阳能电池的制造方法以及所制得的太阳能电池 - Google Patents
太阳能电池的制造方法以及所制得的太阳能电池 Download PDFInfo
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Abstract
在太阳能电池(11)的制造方法中,将平面铝层施加在太阳能电池基底(13)的背面(22)上。通过温度作用将所述铝熔合到所述硅基材中并形成铝BSF(24)。随后将未熔合到硅中的剩余铝除去。所述铝BSF(24)是透光的。
Description
应用领域和现有技术
本发明涉及具有BSF(背表面场)涂层的太阳能电池的制造方法,所述太阳能电池有利地包括硅或硅基材,还涉及使用所述方法制得的太阳能电池。
传统太阳能电池的制造涉及下面概述的一系列工艺步骤。基材通常是由单晶或多晶p型Si晶片提供的,该晶片通过蚀刻工艺作过表面纹理化以提高吸收性能。就单晶硅来说,所述蚀刻工艺是使用氢氧化钠或氢氧化钾溶液与异丙醇的混合物运行的。多晶硅是使用氢氟酸与硝酸的溶液进行蚀刻的。然后再执行进一步的蚀刻清洗程序,以便为随后的扩散工艺提供最佳的表面准备。在所述工艺中,通过扩散深约0.5μm的磷在硅中产生了p-n结。p-n结分离由光产生的载流子。为产生所述p-n结,将晶片在炉中在有磷源(通常为气体混合物或水溶液)的情况下加热到约800℃-950℃。磷渗入硅表面。与正电荷导电的硼掺杂基体相反,所述磷掺杂涂层是负电子导电的。在此过程中在表面上形成了磷玻璃,在后续步骤中通过用HF蚀刻将该磷玻璃除去。接着向硅表面施加大约80nm厚的涂层,通常包括SiN:H,以减少反射和加以钝化。然后向正面(银)和背面(金的或银)施加金属触点。为产生所谓的BSF(背表面场),优选地铝的BSF,在所述方法中在下面的烧成步骤中将施加在晶片背表面上一部分铝熔合到硅中。
问题和解决方案
本发明的问题在于提供上述的方法和由所述方法制造的太阳能电池,该电池能够避免现有技术的缺点并特别是可以进一步提高太阳能电池的效率。
此问题可以通过具有权利要求1所述特征的方法和具有权利要求15所述特征的太阳能电池解决。本发明的有利的和优选的改进构成其它权利要求的主题并在下文中加以详细说明。通过明确引用,将权利要求书的内容并入本说明书。此外,通过明确引用,还将本申请人于2007年3月8日提交的优先权申请DE102007012277.4的内容并入本说明书。
根据本发明,向太阳能电池基材、特别是包括硅的太阳能电池基材的背面施加BSF涂层,施加的方式是首先向所述基材上施加铝或TCO。然后,将铝或一部分铝熔合到基材中,所产生的BSF涂层是透明的或者不会产生阴影。这种制造方法以及由此制造的BSF的优点在于,还可以制造两面或所谓的双面太阳能电池,其还可以从背面照射,所述BSF也不会产生阴影。特别是,这样既可以生成大面积的BSF,也可以生成小的或局部的BSF。所述铝或TCO也可以采用不同的施加工艺,这将在下文中进行说明。最后,与其它高效太阳能电池相比,这样一种方法是较为有利的且从而可以制造出有利的电池。通过在BSF中使用铝来代替硼,可以采用更加有利和容易控制的工艺,特别是铝的熔合温度比硼的要低得多且尤其是不到900℃。由此,例如还可以使用多晶硅,其在使用硼熔合时将会由于远远超过1000℃的高温而被不利地改性。
在本发明的一种改进中,可以以点或小区域的形式向基材或基材的背面施加铝或TCO。由此,可以产生几个点形式或小区域形式的BSF。优选地,这些点或小区域沿线设置,所述线特别是具有相同间距。它们优选地以均匀网格或栅的方式施加,从而可以在BSF上实现均匀的电接触。随后,在所述BSF或小区域上和特别是沿所述线,施加金属触点,例如镍或银的或其组合构成的触点。
在本发明的一种稍微不同的改进中,铝向基材上的施加和由此BSF或用于BSF的传导区域的产生可以按上述线的方式进行。在此同样有利的是所述线彼此平行并具有相同的间隔。
在本发明的又一种改进中,铝可以以区域或大面积的形式施加在基材背面,并可以特别是覆盖整个背面。在此,显然原则上可以提供不同的涂层厚度或涂层厚度梯度,但有利的是施加大致均匀厚度的涂层。如同上述的成线状施加的铝的情形一样,在此同样产生线状的铝-BSF,在后续步骤中可以施加金属触点并同样可以施加特别是线状金属触点。
有许多可能的方式向基材上施加铝。在其中一种可能中,其可以通过丝网印刷工艺或喷墨工艺施加。其还可以以液体或浆的形式施加,例如作为含铝的液体或含铝的凝胶。根据另一种可能,铝可以以与其它金属涂层大致相同的方式通过溅射、蒸发、CVD工艺或熔合来施加。
为将铝熔合到基材或基体硅材料中,可以提供一个加热过程。其有利地与先前用于施加铝中所用或所进行的加热不同。由此可以更好地控制所述过程或为预定目的加以优化。
在将铝熔合到基材或硅材料中之后,把部分剩余的铝除去。特别是,只将没有熔合到基材中或仍为纯铝的铝除去并由此形成它自己的或可区分的涂层。所述未熔合的铝可以被完全除去,或例如为了随后实现更好的电接触和施加电接触,可以只被部分除去或以线的形式保留。换句话说,可以除去所有未熔合的铝。有利的是,通过蚀刻除去铝,所述蚀刻本身是已知的。
在本发明的方法的一种改进中,在去除铝之后可以有一个钝化至少基材背面的步骤。有利的是,至少向基材背面施加抗反射涂层。这在太阳能电池背面也被光照射时尤其有利。
在上述去除或部分去除铝之后,可以在制造太阳能电池时通过将磷扩散到n型硅中而在基材上产生p-n结。
特别是为了随后在基材背面建立电接触,还可以在基材上施加呈预制结构的金属或铝。所述结构特别是建造在上述防反射涂层上,所述建造是机械地或例如通过激光加工进行的。可以在产生的沟槽中引入铝,有利地是以上述线的形式,更特别是在下面的铝-BSF上。然后不除去后者的铝。有利的是向其上施加呈线形式的、传导性极好的背面电接触,特别是银触点。
从权利要求书、说明书和附图中可以收集到这些和进一步的特征,各个特征既可以单独地也可以以再组合的形式在本发明的实施方案和其它领域实施,并可以代表本发明要求保护的有利的、可独立保护的构造。将本申请分成各个部分及副标题不应限制在其下所作叙述的通用有效性。
附图简述
下面参照附图对本发明的实施方案进行描述,其中:
图1,根据本发明的方法的第一种改进制造的具有大面积铝背表面场的太阳能电池的剖面图,其中已经除去了纯铝。
图2,图1所示太阳能电池的具有线状铝背表面场的第二种改进,其中同样已经除去了纯铝。
图3,与图2所示太阳能电池类似的第三种改进,不过其中没有除去纯铝。
实施方案详细说明
图1显示了一个包含p型掺杂的硅基材13的太阳能电池11。在基材13的正面15上施加有抗反射涂层17(例如SiN:H涂层),并进行了图中未显示的对下面基材13的钝化。在正面15上施加了呈在抗反射涂层17内的沟槽形式的触点,其包括在下的镍触点19和施加在镍触点19上的银触点20。抗反射涂层17中与触点19和20相对应的沟槽可以通过蚀刻或者通过机械加工或激光加工来制造。镍触点19可通过所谓的化学镀施加,而银触点20可通过LIP工艺施加。触点19和20是线状的且直接位于下面的基材13硅涂层上。
在太阳能电池11的背面22上,从硅基材13的下面施加了大面积铝背表面场或铝BSF 24。如上所述,所述铝可采用丝网印刷工艺或其它工艺施加。在熔合或烧成到硅中之前,可以进行一个中间干燥步骤。熔合可以在炉中通过用光照射或通过加热来进行。
对于图1所示的太阳能电池11,优选地通过蚀刻步骤将表面施加的或多或少未被熔合到硅中的纯铝被除去。其显著优点在于留在铝BSF 24中的AlSi合金是透明的并由此可以制造双面太阳能电池11,其即使在有光入射的情况下也可以在背面22起作用。另一优点在于通过使用铝,可以避免硼的掺入或避免硼本身。由此,铝比硼更容易处理,特别是通过较低温度来施加和熔入。另一优点在于上述将其与透明导电氧化物(TCO)结合使用的可能,即一般说来所述TCO可以代替铝。
在铝BSF 24上施加了另一抗反射涂层26。向所述涂层26中又引入了触点,有利地是以与正面15相同的方式,或先镍触点29然后银触点30的方式引入。
图2显示了使用另一种方法制造的另一种太阳能电池111。在硅基材113的正面115上施加有抗反射涂层117,差不多与图1所述相同。其被网格状图案分隔或向下开口到基材113,并先后施加镍触点119和银触点120。镍触点可以例如通过化学镀金属来施加。
与图1所示不同,在背面122上仅仅以点的形式,即以小区域或线而非图1所示的大面积的方式,施加铝。不过,铝的施加可以按上面所述进行。随后和例如在熔入之后,大致与图1所示相同,蚀刻掉多余的铝或纯铝,留下小区域的铝背表面场124。在铝-BSF 124上的背面施加的抗反射涂层126中,例如通过蚀刻或机械加工产生结构或将铝-BSF 124开口。然后,如上所述,先施加镍触点129,然后在镍触点129上施加银触点130。图2所示太阳能电池111中的铝-BSF 124是透明的。其也局限在比图1所示太阳能电池11小得多的表面区域上。
最后,图3显示了同样具有稍微不同构造的另一种太阳能电池211。如上所述,在正面215上同样有抗反射涂层217,下镍触点219和上银触点220。不过,为形成线或点形式的铝BSF 224,在背表面222上以与如上所述相同方式施加了铝并将其熔合到硅中。不过,与如上所述不同的是,未除去纯铝而是使其构成图1或2所示的下镍触点的替代物,即作为铝触点232并在其上施加下银触点230。图3的太阳能电池211与图2的太阳能电池111的区别由此在于,为制造铝BSF而熔入铝之后,未除去剩余的纯铝而是使其构成所述下镍触点的替代物。从而,差不多与图1所示太阳能电池11的情形相同,可以相对容易地制造太阳能电池211。
在施加附图中所示的各个不同涂层之前,例如在施加用于铝-BSF的铝之前,可以进行基材预处理。从而可以例如将硅晶片纹理化和/或蚀刻以优化表面和除去切割损伤。还进行用于形成发射极的磷掺杂。还可以有进一步的用于处理太阳能电池的方法步骤,例如韧化。
对于所述的本发明的太阳能电池,可以使用多晶硅材料。这在以前是不可能的,因为在用硼进行熔合时必须采用更高的温度,而这将对多晶硅产生破坏。在熔合铝时可以将温度保持在远低于900℃。由此,在本发明的范围内,还可以使用多晶硅作为基材。还可以在暴露的银触点上钎焊作为电接头。
Claims (15)
1.制造具有BSF涂层的太阳能电池(11,111,211)的方法,其中,通过向太阳能电池基材(13,113,213)、特别是硅基材施加铝或TCO并然后将其熔合到所述基材(13,113,213)中而在所述基材(13,113,213)的背面(22,122,222)上施加BSF涂层(24,124,224),其中所述BSF涂层(24,124,224)是透光的。
2.权利要求1的方法,其中铝或TCO以点的形式或小区域施加在基材(113,213)上,其中有利的是局部产生几个呈点的形式或小区域形式的BSF(124,224),这些点或小区域沿直线设置,所述直线特别是具有相同间距并随后在其上施加线状的金属触点(129,130,232,229)。
3.权利要求1的方法,其中TCO或铝以线的形式施加在基材(113,213)上。
4.权利要求1的方法,其中铝以展开的形式施加到基材(13)上以形成展开的BSF(24),其中有利的是基材的一面的全部面积都被覆盖。
5.前述权利要求中任一项的方法,其中铝或TCO通过丝网印刷工艺施加到基材(13,113,223)上。
6.权利要求1-4的方法,其中铝或TCO以液体或浆的形式,优选地以含铝液体或含铝凝胶的形式施加。
7.权利要求1-4的方法,其中铝或TCO通过溅射、蒸发、CVD工艺或熔合施加。
8.前述权利要求之一的方法,其中铝熔合到基材(13,113,213)或基体硅材料中是通过独立于施加铝的加热进行的。
9.前面权利要求之一的方法,其中在熔合到基材(13,113)中的步骤之后将铝除去,有利的是仅将来自铝涂层中的铝或纯铝除去,其中优选地仅将未熔合到基材中的铝除去。
10.权利要求9的方法,其中将所有未熔合的铝或未与硅材料熔合的铝除去。
11.权利要求9或10的方法,其中通过蚀刻除去铝。
12.权利要求9-11之一的方法,其中在去除铝之后进行钝化,然后在基材(13,113,213)的背面(22,122,222)施加抗反射涂层(26,126,226)。
13.权利要求9-12之一的方法,其中在去除铝之后通过将磷扩散到基材(13,113,213)的n型硅中产生p-n结。
14.前面权利要求之一的方法,其中铝以预制结构,特别是穿透抗反射涂层(26,126,226)向下直到基材的结构,特别是通过丝网印刷工艺施加在基材(13,113,213)上,而不随后去除铝。
15.太阳能电池(11,111,211),其由按照前面权利要求之一的方法处理过的基材(13,113,213)制成。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102934236A (zh) * | 2010-09-03 | 2013-02-13 | Lg电子株式会社 | 太阳能电池及其制造方法 |
CN103346188A (zh) * | 2013-06-05 | 2013-10-09 | 国电光伏有限公司 | 一种晶硅太阳能电池及其制备方法 |
CN107256893A (zh) * | 2011-01-19 | 2017-10-17 | Lg电子株式会社 | 太阳能电池 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009008786A1 (de) * | 2008-10-31 | 2010-06-10 | Bosch Solar Energy Ag | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
DE102008063558A1 (de) * | 2008-12-08 | 2010-06-10 | Gebr. Schmid Gmbh & Co. | Verfahren zur Bearbeitung der Oberfläche eines Wafers zur Herstellung einer Solarzelle und Wafer |
CN101771095B (zh) * | 2009-01-06 | 2012-03-21 | 台湾茂矽电子股份有限公司 | 太阳能电池 |
US8298850B2 (en) * | 2009-05-01 | 2012-10-30 | Silicor Materials Inc. | Bifacial solar cells with overlaid back grid surface |
DE102009044038A1 (de) * | 2009-09-17 | 2011-03-31 | Schott Solar Ag | Verfahren zur Herstellung eines Kontaktbereichs eines elektronischen Bauteils |
US8796060B2 (en) * | 2009-11-18 | 2014-08-05 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
TWI514608B (zh) * | 2010-01-14 | 2015-12-21 | Dow Global Technologies Llc | 具曝露式導電柵格之防溼光伏打裝置 |
EP2534693A2 (en) * | 2010-02-09 | 2012-12-19 | Dow Global Technologies LLC | Moisture resistant photovoltaic devices with improved adhesion of barrier film |
US8105869B1 (en) | 2010-07-28 | 2012-01-31 | Boris Gilman | Method of manufacturing a silicon-based semiconductor device by essentially electrical means |
KR101665722B1 (ko) * | 2010-09-27 | 2016-10-24 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR101699300B1 (ko) * | 2010-09-27 | 2017-01-24 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
KR101528864B1 (ko) * | 2011-01-26 | 2015-06-15 | 가부시키가이샤 사무코 | 태양전지용 웨이퍼 및 그 제조 방법 |
DE102011086302A1 (de) * | 2011-11-14 | 2013-05-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer metallischen Kontaktierungsstruktur auf einer Oberfläche einer Halbleiterstruktur und photovoltaische Solarzelle |
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US8486747B1 (en) | 2012-04-17 | 2013-07-16 | Boris Gilman | Backside silicon photovoltaic cell and method of manufacturing thereof |
KR101871273B1 (ko) | 2012-05-11 | 2018-08-02 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR102018651B1 (ko) * | 2013-04-03 | 2019-09-05 | 엘지전자 주식회사 | 태양 전지 |
CN103618007A (zh) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | 一种新型双面受光太阳电池 |
US10382577B2 (en) * | 2015-01-30 | 2019-08-13 | Microsoft Technology Licensing, Llc | Trending topics on a social network based on member profiles |
KR20200075640A (ko) | 2018-12-18 | 2020-06-26 | 엘지전자 주식회사 | 텐덤 태양전지 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463216A (en) * | 1982-01-28 | 1984-07-31 | Tokyo Shibaura Denki Kabushiki Kaisha | Solar cell |
US20050252544A1 (en) * | 2004-05-11 | 2005-11-17 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4703553A (en) * | 1986-06-16 | 1987-11-03 | Spectrolab, Inc. | Drive through doping process for manufacturing low back surface recombination solar cells |
DE3815512C2 (de) * | 1988-05-06 | 1994-07-28 | Deutsche Aerospace | Solarzelle und Verfahren zu ihrer Herstellung |
JPH08330611A (ja) * | 1995-03-30 | 1996-12-13 | Sharp Corp | シリコン太陽電池セルとその製造方法 |
US6081017A (en) * | 1998-05-28 | 2000-06-27 | Samsung Electronics Co., Ltd. | Self-biased solar cell and module adopting the same |
DE19910816A1 (de) | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
JP3557148B2 (ja) * | 2000-02-21 | 2004-08-25 | 三洋電機株式会社 | 太陽電池モジュール |
JP3910072B2 (ja) * | 2002-01-30 | 2007-04-25 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
JP2004006565A (ja) * | 2002-04-16 | 2004-01-08 | Sharp Corp | 太陽電池とその製造方法 |
JP4232597B2 (ja) * | 2003-10-10 | 2009-03-04 | 株式会社日立製作所 | シリコン太陽電池セルとその製造方法 |
WO2006003830A1 (ja) | 2004-07-01 | 2006-01-12 | Toyo Aluminium Kabushiki Kaisha | ペースト組成物およびそれを用いた太陽電池素子 |
JP2006339499A (ja) * | 2005-06-03 | 2006-12-14 | Sharp Corp | 太陽電池の製造方法 |
-
2007
- 2007-03-08 DE DE102007012277A patent/DE102007012277A1/de not_active Withdrawn
-
2008
- 2008-02-26 CA CA002679857A patent/CA2679857A1/en not_active Abandoned
- 2008-02-26 JP JP2009552097A patent/JP2010520629A/ja active Pending
- 2008-02-26 MX MX2009009666A patent/MX2009009666A/es active IP Right Grant
- 2008-02-26 AT AT08716040T patent/ATE545157T1/de active
- 2008-02-26 CN CN2008800072375A patent/CN101681952B/zh not_active Expired - Fee Related
- 2008-02-26 KR KR1020097018698A patent/KR20090118056A/ko not_active Application Discontinuation
- 2008-02-26 ES ES08716040T patent/ES2380611T3/es active Active
- 2008-02-26 EP EP08716040A patent/EP2135300B1/de active Active
- 2008-02-26 AU AU2008224148A patent/AU2008224148B2/en not_active Ceased
- 2008-02-26 WO PCT/EP2008/001500 patent/WO2008107094A2/de active Application Filing
- 2008-03-07 TW TW097108237A patent/TW200901492A/zh unknown
-
2009
- 2009-09-03 IL IL200728A patent/IL200728A0/en unknown
- 2009-09-04 US US12/554,592 patent/US8349637B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463216A (en) * | 1982-01-28 | 1984-07-31 | Tokyo Shibaura Denki Kabushiki Kaisha | Solar cell |
US20050252544A1 (en) * | 2004-05-11 | 2005-11-17 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102934236A (zh) * | 2010-09-03 | 2013-02-13 | Lg电子株式会社 | 太阳能电池及其制造方法 |
CN102934236B (zh) * | 2010-09-03 | 2015-12-02 | Lg电子株式会社 | 太阳能电池及其制造方法 |
US9972738B2 (en) | 2010-09-03 | 2018-05-15 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
US10090428B2 (en) | 2010-09-03 | 2018-10-02 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
US10424685B2 (en) | 2010-09-03 | 2019-09-24 | Lg Electronics Inc. | Method for manufacturing solar cell having electrodes including metal seed layer and conductive layer |
CN107256893A (zh) * | 2011-01-19 | 2017-10-17 | Lg电子株式会社 | 太阳能电池 |
US10446697B2 (en) | 2011-01-19 | 2019-10-15 | Lg Electronics Inc. | Solar cell |
US11538945B2 (en) | 2011-01-19 | 2022-12-27 | Shangrao Jinko Solar Technology Development Co., Ltd | Solar cell |
CN103346188A (zh) * | 2013-06-05 | 2013-10-09 | 国电光伏有限公司 | 一种晶硅太阳能电池及其制备方法 |
CN103346188B (zh) * | 2013-06-05 | 2016-01-06 | 国电光伏有限公司 | 一种晶硅太阳能电池及其制备方法 |
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WO2008107094A3 (de) | 2008-12-11 |
EP2135300A2 (de) | 2009-12-23 |
ATE545157T1 (de) | 2012-02-15 |
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