WO2013017526A3 - Verfahren zur herstellung einer solarzelle sowie solarzelle - Google Patents

Verfahren zur herstellung einer solarzelle sowie solarzelle Download PDF

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Publication number
WO2013017526A3
WO2013017526A3 PCT/EP2012/064715 EP2012064715W WO2013017526A3 WO 2013017526 A3 WO2013017526 A3 WO 2013017526A3 EP 2012064715 W EP2012064715 W EP 2012064715W WO 2013017526 A3 WO2013017526 A3 WO 2013017526A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
dielectric layer
substrate
rear side
silicon
Prior art date
Application number
PCT/EP2012/064715
Other languages
English (en)
French (fr)
Other versions
WO2013017526A2 (de
Inventor
Jens Dirk MOSCHNER
Yvonne GASSENBAUER
Agata Lachowicz
Markus Fiedler
Gabriele Blendin
Katharina Dressler
Original Assignee
Schott Solar Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Solar Ag filed Critical Schott Solar Ag
Priority to CN201280037938.XA priority Critical patent/CN103718311A/zh
Priority to EP12740153.7A priority patent/EP2737543A2/de
Publication of WO2013017526A2 publication Critical patent/WO2013017526A2/de
Publication of WO2013017526A3 publication Critical patent/WO2013017526A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung bezieht sich auf ein Verfahren zur Herstellung einer Solarzelle und eine solche selbst. Die Solarzelle umfasst ein Siliciumsubstrat mit strahlenzugewandter Vorderseite und einer Rückseite, einer entlang der Rückseite verlaufenden ersten dielektrischen Schicht, einer entlang substratabgewandter Seite der ersten dielektrischen Schicht verlaufenden zweiten dielektrischen Schicht bestehend aus einem Material aus der Gruppe Siliciumnitrid, Siliciumoxid, Siliciumoxinitrid sowie einer sich entlang substratabgewandter Seite der zweiten dielektrischen Schicht erstreckenden Metallschicht. Um die Solarzelle mit besonders hohem Wirkungsgrad reproduzierbar mit weniger Prozeßschritten herstellen zu können, wird vorgeschlagen, dass die Rückseite des Substrats einen Glanzwert bei 60° Einstrahlungswinkel unter 80 GU aufweist und dass die erste dielektrische Schicht ortsgebundene negative Ladungen enthält.
PCT/EP2012/064715 2011-07-29 2012-07-26 Verfahren zur herstellung einer solarzelle sowie solarzelle WO2013017526A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201280037938.XA CN103718311A (zh) 2011-07-29 2012-07-26 用于制造太阳能电池的方法以及太阳能电池
EP12740153.7A EP2737543A2 (de) 2011-07-29 2012-07-26 Verfahren zur herstellung einer solarzelle sowie solarzelle

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102011052310.3 2011-07-29
DE102011052310 2011-07-29
DE201210102745 DE102012102745A1 (de) 2011-07-29 2012-03-29 Verfahren zur Herstellung einer Solarzelle sowie Solarzelle
DE102012102745.5 2012-03-29

Publications (2)

Publication Number Publication Date
WO2013017526A2 WO2013017526A2 (de) 2013-02-07
WO2013017526A3 true WO2013017526A3 (de) 2013-11-07

Family

ID=47503223

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/064715 WO2013017526A2 (de) 2011-07-29 2012-07-26 Verfahren zur herstellung einer solarzelle sowie solarzelle

Country Status (5)

Country Link
EP (1) EP2737543A2 (de)
CN (1) CN103718311A (de)
DE (1) DE102012102745A1 (de)
TW (1) TW201312779A (de)
WO (1) WO2013017526A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI492400B (zh) * 2013-02-21 2015-07-11 茂迪股份有限公司 太陽能電池及其製造方法與太陽能電池模組
CN104241410B (zh) * 2014-09-24 2017-07-14 中国科学院宁波材料技术与工程研究所 复合硅基材料及其制法和应用
US9559245B2 (en) * 2015-03-23 2017-01-31 Sunpower Corporation Blister-free polycrystalline silicon for solar cells
TWI539613B (zh) * 2015-07-16 2016-06-21 有成精密股份有限公司 高功率太陽能電池模組
CN110120431A (zh) * 2019-05-28 2019-08-13 中国科学院物理研究所 具有v型槽绒面的硅片及其应用
DE102019114498A1 (de) * 2019-05-29 2020-12-03 Hanwha Q Cells Gmbh Wafer-Solarzelle, Solarmodul und Verfahren zur Herstellung der Wafer-Solarzelle
CN110289333B (zh) * 2019-07-10 2022-02-08 江苏隆基乐叶光伏科技有限公司 一种太阳电池、生产方法及光伏组件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090165855A1 (en) * 2007-12-28 2009-07-02 Industrial Technology Research Institute Passivation layer structure of solar cell and fabricating method thereof
US20100203742A1 (en) * 2009-02-06 2010-08-12 Applied Materials, Inc. Negatively Charged Passivation Layer in a Photovoltaic Cell
US20110132444A1 (en) * 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof

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Publication number Priority date Publication date Assignee Title
DE3815512C2 (de) 1988-05-06 1994-07-28 Deutsche Aerospace Solarzelle und Verfahren zu ihrer Herstellung
US6600557B1 (en) * 1999-05-21 2003-07-29 Memc Electronic Materials, Inc. Method for the detection of processing-induced defects in a silicon wafer
DE10046170A1 (de) 2000-09-19 2002-04-04 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht
US7659475B2 (en) 2003-06-20 2010-02-09 Imec Method for backside surface passivation of solar cells and solar cells with such passivation
EP1763086A1 (de) 2005-09-09 2007-03-14 Interuniversitair Micro-Elektronica Centrum Solarzellen mit dickem Siliziumoxid und Siliziumnitrid zur Passivierung und entsprechendes Herstellungsverfahren
EP2068369A1 (de) * 2007-12-03 2009-06-10 Interuniversitair Microelektronica Centrum (IMEC) Photovoltaikzellen mit Metal-Wrap-Through und verbesserter Passivierung
DE102010017155B4 (de) * 2010-05-31 2012-01-26 Q-Cells Se Solarzelle

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090165855A1 (en) * 2007-12-28 2009-07-02 Industrial Technology Research Institute Passivation layer structure of solar cell and fabricating method thereof
US20100203742A1 (en) * 2009-02-06 2010-08-12 Applied Materials, Inc. Negatively Charged Passivation Layer in a Photovoltaic Cell
US20110132444A1 (en) * 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SCHMIDT J ET AL: "Surface Passivation of High-efficiency Silicon Solar Cells by atomic-layer-deposited Al2O3", PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS, JOHN WILEY & SONS, LTD, vol. 16, 1 September 2008 (2008-09-01), pages 461 - 466, XP002577271, ISSN: 1062-7995, [retrieved on 20080303], DOI: 10.1002/PIP.823 *

Also Published As

Publication number Publication date
CN103718311A (zh) 2014-04-09
TW201312779A (zh) 2013-03-16
WO2013017526A2 (de) 2013-02-07
DE102012102745A1 (de) 2013-01-31
EP2737543A2 (de) 2014-06-04

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