WO2011025216A3 - 그래핀 박막과 나노 입자를 이용한 광검출기 및 그 제조 방법 - Google Patents

그래핀 박막과 나노 입자를 이용한 광검출기 및 그 제조 방법 Download PDF

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Publication number
WO2011025216A3
WO2011025216A3 PCT/KR2010/005631 KR2010005631W WO2011025216A3 WO 2011025216 A3 WO2011025216 A3 WO 2011025216A3 KR 2010005631 W KR2010005631 W KR 2010005631W WO 2011025216 A3 WO2011025216 A3 WO 2011025216A3
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Prior art keywords
thin film
photodetector
graphene thin
nanoparticles
graphene
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PCT/KR2010/005631
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English (en)
French (fr)
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WO2011025216A2 (ko
Inventor
김태환
정재훈
손동익
이정민
양희연
박원일
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한양대학교 산학협력단
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Priority to US13/392,176 priority Critical patent/US8598568B2/en
Publication of WO2011025216A2 publication Critical patent/WO2011025216A2/ko
Publication of WO2011025216A3 publication Critical patent/WO2011025216A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Light Receiving Elements (AREA)

Abstract

그래핀 박막과 나노 입자를 이용한 광검출기 및 그 제조 방법을 제공한다. 본 발명의 광검출기는, 기상 탄소 공급원을 이용한 그래핀 증착을 통해 제작한 시트 형상의 그래핀 박막; 및 상기 그래핀 박막 위에 형성되며 상기 그래핀 박막의 전극 영역을 정의하도록 패터닝되어 있고 매트릭스 물질 없이 나노 입자로 이루어진 나노 입자층을 포함한다. 이러한 광검출기는 그래핀 박막을 채널 및 전극으로 사용하고 나노 입자를 광기전력 물질(자외선에 의한 광기전력으로 전자-정공쌍을 형성)로 사용하는 수평형 구조이며 매우 간단한 구조이므로 저비용으로 제조할 수 있어 생산성이 높을 뿐만 아니라, 그래핀 박막을 포함함에 따라 저전력화할 수 있다.
PCT/KR2010/005631 2009-08-24 2010-08-24 그래핀 박막과 나노 입자를 이용한 광검출기 및 그 제조 방법 WO2011025216A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/392,176 US8598568B2 (en) 2009-08-24 2010-08-24 Photodetector using a graphene thin film and nanoparticles, and method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090078054A KR101154347B1 (ko) 2009-08-24 2009-08-24 그래핀 박막과 나노 입자를 이용한 광검출기 및 그 제조 방법
KR10-2009-0078054 2009-08-24

Publications (2)

Publication Number Publication Date
WO2011025216A2 WO2011025216A2 (ko) 2011-03-03
WO2011025216A3 true WO2011025216A3 (ko) 2011-07-07

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PCT/KR2010/005631 WO2011025216A2 (ko) 2009-08-24 2010-08-24 그래핀 박막과 나노 입자를 이용한 광검출기 및 그 제조 방법

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US (1) US8598568B2 (ko)
KR (1) KR101154347B1 (ko)
WO (1) WO2011025216A2 (ko)

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Also Published As

Publication number Publication date
US20120161106A1 (en) 2012-06-28
US8598568B2 (en) 2013-12-03
WO2011025216A2 (ko) 2011-03-03
KR101154347B1 (ko) 2012-06-13
KR20110020443A (ko) 2011-03-03

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