WO2008107156A3 - Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle - Google Patents

Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle Download PDF

Info

Publication number
WO2008107156A3
WO2008107156A3 PCT/EP2008/001702 EP2008001702W WO2008107156A3 WO 2008107156 A3 WO2008107156 A3 WO 2008107156A3 EP 2008001702 W EP2008001702 W EP 2008001702W WO 2008107156 A3 WO2008107156 A3 WO 2008107156A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
producing
silicon substrate
produced
refraction index
Prior art date
Application number
PCT/EP2008/001702
Other languages
English (en)
French (fr)
Other versions
WO2008107156A2 (de
Inventor
Dirk Habermann
Patrik MÜLLER
Original Assignee
Schmid Technology Systems Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Technology Systems Gmbh filed Critical Schmid Technology Systems Gmbh
Priority to CN200880007501A priority Critical patent/CN101730940A/zh
Priority to MX2009009665A priority patent/MX2009009665A/es
Priority to CA002679685A priority patent/CA2679685A1/en
Priority to JP2009552113A priority patent/JP2010520631A/ja
Priority to AU2008224121A priority patent/AU2008224121A1/en
Priority to EP08716221A priority patent/EP2135291A2/de
Publication of WO2008107156A2 publication Critical patent/WO2008107156A2/de
Priority to IL200696A priority patent/IL200696A0/en
Priority to US12/554,410 priority patent/US20100018580A1/en
Publication of WO2008107156A3 publication Critical patent/WO2008107156A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Bei einem Verfahren zur Herstellung einer Solarzelle (20) aus einem Silizium-Substrat (4) wird auf Vorder- und Rückseite zuerst eine erste Anti-reflexions-Schicht (2, 5) mit einem optischen Brechungsindex n zwischen 3,6 und 3,9 aufgebracht. Darauf wird eine zweite Antireflexions-Schicht (1, 6) mit einem optischen Brechungsindex n zwischen 1,94 und 2,1 aufgebracht. Die Antireflexions-Schichten (1, 2, 5, 6) werden bis auf das Silizium-Substrat (4) darunter durchtrennt, um darin Metallkontakte (7, 9) zu dem Silizium-Substrat (4) einzubringen.
PCT/EP2008/001702 2007-03-08 2008-03-04 Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle WO2008107156A2 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CN200880007501A CN101730940A (zh) 2007-03-08 2008-03-04 用于制造太阳能电池的方法和使用所述方法制造的太阳能电池
MX2009009665A MX2009009665A (es) 2007-03-08 2008-03-04 Metodo para la produccion de una celula solar asi como celula solar producida utilizando dicho metodo.
CA002679685A CA2679685A1 (en) 2007-03-08 2008-03-04 Method for the manufacture of a solar cell and the resulting solar cell
JP2009552113A JP2010520631A (ja) 2007-03-08 2008-03-04 太陽電池の製造方法及びそれによって得られた太陽電池
AU2008224121A AU2008224121A1 (en) 2007-03-08 2008-03-04 Method for producing a solar cell and solar cell produced using said method
EP08716221A EP2135291A2 (de) 2007-03-08 2008-03-04 Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle
IL200696A IL200696A0 (en) 2007-03-08 2009-09-02 Method for manufacture of a solar cell and the resulting solar cell
US12/554,410 US20100018580A1 (en) 2007-03-08 2009-09-04 Method for the Manufacture of a Solar Cell and the Resulting Solar Cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007012268A DE102007012268A1 (de) 2007-03-08 2007-03-08 Verfahren zur Herstellung einer Solarzelle sowie damit hergestellte Solarzelle
DE102007012268.5 2007-03-08

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/554,410 Continuation US20100018580A1 (en) 2007-03-08 2009-09-04 Method for the Manufacture of a Solar Cell and the Resulting Solar Cell

Publications (2)

Publication Number Publication Date
WO2008107156A2 WO2008107156A2 (de) 2008-09-12
WO2008107156A3 true WO2008107156A3 (de) 2009-10-29

Family

ID=39678057

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/001702 WO2008107156A2 (de) 2007-03-08 2008-03-04 Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle

Country Status (12)

Country Link
US (1) US20100018580A1 (de)
EP (1) EP2135291A2 (de)
JP (1) JP2010520631A (de)
KR (1) KR20090129422A (de)
CN (1) CN101730940A (de)
AU (1) AU2008224121A1 (de)
CA (1) CA2679685A1 (de)
DE (1) DE102007012268A1 (de)
IL (1) IL200696A0 (de)
MX (1) MX2009009665A (de)
TW (1) TW200901484A (de)
WO (1) WO2008107156A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7993700B2 (en) 2007-03-01 2011-08-09 Applied Materials, Inc. Silicon nitride passivation for a solar cell
DE102008063558A1 (de) * 2008-12-08 2010-06-10 Gebr. Schmid Gmbh & Co. Verfahren zur Bearbeitung der Oberfläche eines Wafers zur Herstellung einer Solarzelle und Wafer
US20100258174A1 (en) * 2009-04-14 2010-10-14 Michael Ghebrebrhan Global optimization of thin film photovoltaic cell front coatings
KR101665722B1 (ko) * 2010-09-27 2016-10-24 엘지전자 주식회사 태양 전지 및 이의 제조 방법
EP2820683B1 (de) * 2012-02-29 2021-06-02 Bakersun Zweiseitige kristalline siliciumsolarzelle mit reflektor
US9379269B2 (en) 2012-02-29 2016-06-28 Bakersun Bifacial crystalline silicon solar panel with reflector
US20150339141A1 (en) * 2014-05-20 2015-11-26 International Business Machines Corporation Memory management for virtual machines
KR101657814B1 (ko) * 2014-12-23 2016-09-19 주식회사 엘지실트론 반도체 기판 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19524459A1 (de) * 1995-07-07 1997-01-09 Forschungszentrum Juelich Gmbh Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten
EP1519422A2 (de) * 2003-09-24 2005-03-30 Sanyo Electric Co., Ltd. Amorphe photovoltaische Zelle und ihr Herstellungsverfahren
WO2006029250A2 (en) * 2004-09-07 2006-03-16 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
EP1722419A1 (de) * 2005-05-12 2006-11-15 General Electric Company Oberflächenpassiviertes photovoltaisches Bauelement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3810057A1 (de) * 1988-03-25 1989-10-05 Philips Patentverwaltung Verfahren zur messung der exzentrizitaet eines in einem zylindrischen steckerstift eingebetteten lichtwellenleiters
EP1872413A1 (de) * 2005-04-14 2008-01-02 Renewable Energy Corporation ASA Oberflächenpassivierung von auf silizium basierenden wafern

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19524459A1 (de) * 1995-07-07 1997-01-09 Forschungszentrum Juelich Gmbh Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten
EP1519422A2 (de) * 2003-09-24 2005-03-30 Sanyo Electric Co., Ltd. Amorphe photovoltaische Zelle und ihr Herstellungsverfahren
WO2006029250A2 (en) * 2004-09-07 2006-03-16 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
EP1722419A1 (de) * 2005-05-12 2006-11-15 General Electric Company Oberflächenpassiviertes photovoltaisches Bauelement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KEPPNER H ET AL: "PASSIVATION PROPERTIES OF AMORPHOUS AND MICROCRYSTALLINE SILICON LAYERS DEPOSITED BY VHF-GD FOR CRYSTALLINE SILICON SOLAR CELLS", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 34, no. 1 - 04, 1 September 1994 (1994-09-01), pages 201 - 209, XP000728737, ISSN: 0927-0248 *

Also Published As

Publication number Publication date
MX2009009665A (es) 2010-06-18
CA2679685A1 (en) 2008-09-12
WO2008107156A2 (de) 2008-09-12
US20100018580A1 (en) 2010-01-28
EP2135291A2 (de) 2009-12-23
IL200696A0 (en) 2010-05-17
DE102007012268A1 (de) 2008-09-11
AU2008224121A1 (en) 2008-09-12
KR20090129422A (ko) 2009-12-16
TW200901484A (en) 2009-01-01
JP2010520631A (ja) 2010-06-10
CN101730940A (zh) 2010-06-09

Similar Documents

Publication Publication Date Title
WO2008107156A3 (de) Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle
WO2007109568A3 (en) Method and structure for fabricating solar cells
WO2008107094A3 (de) Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle
WO2005034149A3 (de) Kugel- oder kornförmiges halbleiterbauelement zur verwendung in solarzellen und verfahren zur herstellung; verfahren zur herstellung einer solarzelle mit halbleiterbauelement und solarzelle
WO2011085143A3 (en) Solar cell including sputtered reflective layer and method of manufacture thereof
WO2007014288A3 (en) Method and system for manufacturing solar panels using an integrated solar cell using a plurality of photovoltaic regions
WO2008036769A3 (en) Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
TW200725782A (en) Transfer substrate, transfer method, and method of manufacturing display device
WO2008143885A3 (en) Protection layer for fabricating a solar cell
WO2009037955A1 (ja) 太陽電池の製造方法
WO2012018649A3 (en) Cooperative photovoltaic networks and photovoltaic cell adaptations for use therein
WO2010071341A3 (en) Solar cell and method of manufacturing the same
WO2008115326A3 (en) Back reflector for use in photovoltaic device
WO2008037658A3 (fr) Procede de realisation de cellule photovoltaique a heterojonction en face arriere
WO2008140224A3 (en) Method, apparatus and system of manufacturing solar cell
WO2008019073A3 (en) System and method for creating electric isolation between layers for photovoltaic applications
WO2009156640A3 (fr) Cellule photovoltaïque et substrat de cellule photovoltaïque
EP1798778A3 (de) Integrierte Dünnfilm-Solarzelle und Verfahren zu ihrer Herstellung
WO2010051355A3 (en) Photovoltaic cell module and method of forming
WO2011122853A3 (ko) 태양광 발전장치 및 이의 제조방법
MX2007005198A (es) Anteojos electro-activos y metodos para fabricarlos.
WO2011066999A3 (en) Antireflection coating as well as solar cell and solar module therewith
WO2009153701A3 (en) Appearance-modifying device, method for manufacturing such a device, and method for operating such a device
WO2010041262A3 (en) Solar cells and method of manufacturing thereof
WO2010062957A3 (en) Semi-transparent thin-film photovoltaic modules and methods of manufacture

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880007501.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08716221

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2008224121

Country of ref document: AU

WWE Wipo information: entry into national phase

Ref document number: 2679685

Country of ref document: CA

Ref document number: 12009501672

Country of ref document: PH

WWE Wipo information: entry into national phase

Ref document number: 200696

Country of ref document: IL

WWE Wipo information: entry into national phase

Ref document number: 2009552113

Country of ref document: JP

Ref document number: 1020097018704

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: MX/A/2009/009665

Country of ref document: MX

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2008224121

Country of ref document: AU

Date of ref document: 20080304

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2008716221

Country of ref document: EP