CA2679685A1 - Method for the manufacture of a solar cell and the resulting solar cell - Google Patents
Method for the manufacture of a solar cell and the resulting solar cell Download PDFInfo
- Publication number
- CA2679685A1 CA2679685A1 CA002679685A CA2679685A CA2679685A1 CA 2679685 A1 CA2679685 A1 CA 2679685A1 CA 002679685 A CA002679685 A CA 002679685A CA 2679685 A CA2679685 A CA 2679685A CA 2679685 A1 CA2679685 A1 CA 2679685A1
- Authority
- CA
- Canada
- Prior art keywords
- coating
- solar cell
- doped
- silicon
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims description 108
- 239000011248 coating agent Substances 0.000 claims description 93
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 230000003667 anti-reflective effect Effects 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 235000010210 aluminium Nutrition 0.000 description 10
- 239000010410 layer Substances 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000136 polysorbate Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241000208152 Geranium Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007012268.5 | 2007-03-08 | ||
DE102007012268A DE102007012268A1 (de) | 2007-03-08 | 2007-03-08 | Verfahren zur Herstellung einer Solarzelle sowie damit hergestellte Solarzelle |
PCT/EP2008/001702 WO2008107156A2 (de) | 2007-03-08 | 2008-03-04 | Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle |
Publications (1)
Publication Number | Publication Date |
---|---|
CA2679685A1 true CA2679685A1 (en) | 2008-09-12 |
Family
ID=39678057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002679685A Abandoned CA2679685A1 (en) | 2007-03-08 | 2008-03-04 | Method for the manufacture of a solar cell and the resulting solar cell |
Country Status (12)
Country | Link |
---|---|
US (1) | US20100018580A1 (de) |
EP (1) | EP2135291A2 (de) |
JP (1) | JP2010520631A (de) |
KR (1) | KR20090129422A (de) |
CN (1) | CN101730940A (de) |
AU (1) | AU2008224121A1 (de) |
CA (1) | CA2679685A1 (de) |
DE (1) | DE102007012268A1 (de) |
IL (1) | IL200696A0 (de) |
MX (1) | MX2009009665A (de) |
TW (1) | TW200901484A (de) |
WO (1) | WO2008107156A2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7993700B2 (en) | 2007-03-01 | 2011-08-09 | Applied Materials, Inc. | Silicon nitride passivation for a solar cell |
DE102008063558A1 (de) * | 2008-12-08 | 2010-06-10 | Gebr. Schmid Gmbh & Co. | Verfahren zur Bearbeitung der Oberfläche eines Wafers zur Herstellung einer Solarzelle und Wafer |
US20100258174A1 (en) * | 2009-04-14 | 2010-10-14 | Michael Ghebrebrhan | Global optimization of thin film photovoltaic cell front coatings |
KR101665722B1 (ko) * | 2010-09-27 | 2016-10-24 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
US9379269B2 (en) | 2012-02-29 | 2016-06-28 | Bakersun | Bifacial crystalline silicon solar panel with reflector |
CN107104161A (zh) * | 2012-02-29 | 2017-08-29 | 贝克阳光公司 | 具有反射器的双面晶体硅太阳能板 |
US20150339141A1 (en) * | 2014-05-20 | 2015-11-26 | International Business Machines Corporation | Memory management for virtual machines |
KR101657814B1 (ko) * | 2014-12-23 | 2016-09-19 | 주식회사 엘지실트론 | 반도체 기판 제조 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3810057A1 (de) * | 1988-03-25 | 1989-10-05 | Philips Patentverwaltung | Verfahren zur messung der exzentrizitaet eines in einem zylindrischen steckerstift eingebetteten lichtwellenleiters |
DE19524459A1 (de) * | 1995-07-07 | 1997-01-09 | Forschungszentrum Juelich Gmbh | Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten |
EP1519422B1 (de) * | 2003-09-24 | 2018-05-16 | Panasonic Intellectual Property Management Co., Ltd. | Solarzelle und deren Herstellungsverfahren |
US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
US8916768B2 (en) * | 2005-04-14 | 2014-12-23 | Rec Solar Pte. Ltd. | Surface passivation of silicon based wafers |
US7375378B2 (en) * | 2005-05-12 | 2008-05-20 | General Electric Company | Surface passivated photovoltaic devices |
-
2007
- 2007-03-08 DE DE102007012268A patent/DE102007012268A1/de not_active Withdrawn
-
2008
- 2008-03-04 WO PCT/EP2008/001702 patent/WO2008107156A2/de active Application Filing
- 2008-03-04 EP EP08716221A patent/EP2135291A2/de not_active Withdrawn
- 2008-03-04 CN CN200880007501A patent/CN101730940A/zh active Pending
- 2008-03-04 MX MX2009009665A patent/MX2009009665A/es not_active Application Discontinuation
- 2008-03-04 KR KR1020097018704A patent/KR20090129422A/ko not_active Application Discontinuation
- 2008-03-04 JP JP2009552113A patent/JP2010520631A/ja active Pending
- 2008-03-04 CA CA002679685A patent/CA2679685A1/en not_active Abandoned
- 2008-03-04 AU AU2008224121A patent/AU2008224121A1/en not_active Abandoned
- 2008-03-06 TW TW097107903A patent/TW200901484A/zh unknown
-
2009
- 2009-09-02 IL IL200696A patent/IL200696A0/en unknown
- 2009-09-04 US US12/554,410 patent/US20100018580A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2008107156A3 (de) | 2009-10-29 |
IL200696A0 (en) | 2010-05-17 |
KR20090129422A (ko) | 2009-12-16 |
JP2010520631A (ja) | 2010-06-10 |
CN101730940A (zh) | 2010-06-09 |
AU2008224121A1 (en) | 2008-09-12 |
WO2008107156A2 (de) | 2008-09-12 |
EP2135291A2 (de) | 2009-12-23 |
DE102007012268A1 (de) | 2008-09-11 |
US20100018580A1 (en) | 2010-01-28 |
MX2009009665A (es) | 2010-06-18 |
TW200901484A (en) | 2009-01-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FZDE | Discontinued |