CN102751242B - 具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列基板 - Google Patents

具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列基板 Download PDF

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CN102751242B
CN102751242B CN201210264249.4A CN201210264249A CN102751242B CN 102751242 B CN102751242 B CN 102751242B CN 201210264249 A CN201210264249 A CN 201210264249A CN 102751242 B CN102751242 B CN 102751242B
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张鑫狄
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TCL China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列基板，所述制作方法包括以下步骤：步骤1、提供基板；步骤2、在基板上形成透明导电层；步骤3、在透明导电层上形成导电增强层；步骤4、在导电增强层上形成光伏层；步骤5、在光伏层形成金属层；步骤6、通过光罩制程在金属层、光伏层、导电增强层及透明导电层上形成开口；步骤7、在金属层上形成透明绝缘层；步骤8、在透明绝缘层上形成TFT阵列。本发明通过在基板上形成一光伏电池，在该光伏电池上形成TFT阵列，以简单的制程将光伏电池嵌入阵列基板中，进而利用背光源发出的光线为液晶显示面板元件或配件供电，充分利用背光源所发出的光能，节省了对外部电能的消耗。

Description

具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列基板
技术领域
本发明涉及液晶显示领域，尤其涉及一种具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列基板。
背景技术
液晶显示装置(LCD，Liquid Crystal Display)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，通过玻璃基板通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。直下式背光模组是将发光光源例如CCFL(Cold Cathode Fluorescent Lamp，阴极萤光灯管)或LED(Light Emitting Diode，发光二极管)设置在液晶显示面板后方，直接形成面光源提供给液晶显示面板。而侧入式背光模组是将背光源LED灯条(Light bar)设于液晶显示面板侧后方的背板边缘，LED灯条发出的光线从导光板(LGP，Light Guide Plate)一侧的入光面进入导光板，经反射和扩散后从导光板出光面射出，再经由光学膜片组以形成面光源提供给液晶显示面板。然而，背光源发出的光只有6％左右可以透过液晶显示面板，这就造成大量光能被浪费。
通常液晶显示面板由彩膜基板(CF，Color Filter)、彩膜基板(TFT，ThinFilm Transistor)、夹于彩膜基板与彩膜基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
现有的TFT基板的第一与第二金属电极，对背光模组的光有一定的遮挡，使得背光模组所发出的光线不能完全被液晶显示面板所利用，造成了光能损耗。
光伏电池是通过光电效应或者光化学效应直接把光能转化成电能的装置，为了提高液晶显示装置中的背光源的光的利用率，本领域技术人员在液晶显示面板中加入光伏电池，该光伏电池吸收多余的光能，并将光能转化为电能，为液晶显示面板的元件或配件供电，充分利用背光源所发出的光能，节省了对外部电能的消耗。
然而，现有技术中只是将制作好的光伏电池集成于液晶显示面板中，制程较为复杂，生产周期也较长，进而增加了生产成本。
发明内容
本发明的目的在于提供一种具有嵌入式光伏电池的阵列基板的制作方法，其先在基板上形成一光伏电池，再在该光伏电池上形成TFT阵列，有效利用背光源的光能，降低外部电能消耗，降低了生产成本。
本发明的另一目的在于提供一种具有嵌入式光伏电池的阵列基板，其能有效利用背光源的光能，降低外部电能消耗，降低了生产成本。
为实现上述目的，本发明提供一种具有嵌入式光伏电池的阵列基板的制作方法，包括以下步骤：
步骤1、提供基板；
步骤2、在基板上形成透明导电层；
步骤3、在透明导电层上形成导电增强层；
步骤4、在导电增强层上形成光伏层；
步骤5、在光伏层形成金属层；
步骤6、通过光罩制程在金属层、光伏层、导电增强层及透明导电层上形成开口；
步骤7、在金属层上形成透明绝缘层；
步骤8、在透明绝缘层上形成TFT阵列。
所述基板为玻璃基板。
所述透明导电层为氧化铟锡层，其通过溅射工艺形成于基板上。
所述导电增强层为3，4-乙撑二氧噻吩单体聚合物层，其通过涂布方式形成于透明导电层上。
所述光伏层为有机聚合物光伏层、有机小分子光伏层或P-N结型光伏层，其通过涂布方式形成于导电增强层上。
所述金属层为铝层，其通过溅射工艺形成于光伏层上。
所述光罩制程包括曝光、显影及蚀刻工艺。
所述透明绝缘层为氮化硅层，其通过涂布方式形成于金属层上。
本发明还提供一种具有嵌入式光伏电池的阵列基板，包括：基板、设于基板上的光伏电池、设于光伏电池上的TFT阵列及设于光伏电池与TFT阵列之间的透明绝缘层，所述光伏电池包括透明导电层、形成于透明导电层上的导电增强层、形成于导电增强层上的光伏层及形成于光伏层上的金属层。
所述基板为玻璃基板；所述透明导电层为氧化铟锡层；所述导电增强层为3，4-乙撑二氧噻吩单体聚合物层；所述光伏层为有机聚合物光伏层、有机小分子光伏层或P-N结型光伏层；所述金属层为铝层；所述透明绝缘层为氮化硅层。
本发明的有益效果：本发明具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列基板，通过在基板上形成一光伏电池，再在该光伏电池上形成TFT阵列，其以简单的制程将光伏电池嵌入阵列基板中，进而利用背光源发出的光线为液晶显示面板元件或配件供电，充分利用背光源所发出的光能，节省了对外部电能的消耗。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明具有嵌入式光伏电池的阵列基板的制作方法的流程图；
图2为本发明具有嵌入式光伏电池的阵列基板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种具有嵌入式光伏电池的阵列基板的制作方法，包括以下步骤：
步骤1、提供基板，该基板由可透光材质构成，通常为玻璃基板、石英基板或其他合适的材料的基板。
步骤2、在基板上形成透明导电层。
所述透明导电层为氧化铟锡(ITO)层，该透明导电层通过溅射(Sputtering)制程形成于透明导电层上。
步骤3、在透明导电层上形成导电增强层。
所述导电增强层为3，4-乙撑二氧噻吩单体(EDOT)的聚合物(PEDOT)层，其通过涂布方式形成于透明导电层上，用于增强空穴导电能力。
步骤4、在导电增强层上形成光伏层。
所述光伏层为有机聚合物光伏层、有机小分子光伏层或P-N结型光伏层，其通过涂布方式形成于导电增强层上，用于吸收光能，为本发明具有嵌入式光伏电池的阵列基板的光伏吸收层。
优选的，所述光伏层为富勒稀类材料层、燃料敏化类材料层或聚苯烯类材料层。
步骤5、在光伏层形成金属层。
所述金属层为铝(Al)层，其通过溅射(Sputtering)制程形成于所述光伏层上，为光伏电池的阴极电极材料。
步骤6、通过光罩制程在金属层、光伏层、导电增强层及透明导电层上形成开口。
所述开口为像素(pixel)开口位置，进而不影响面板的开口率。
所述光罩制程包括曝光、显影及蚀刻工艺，本制程还可以替换成干刻制程，同样可以实现本发明的技术效果。
步骤7、在金属层上形成透明绝缘层。
所述透明绝缘层为氮化硅层，其通过涂布方式形成于金属层上，将金属层与TFT层绝缘隔离，且有平坦化基板的作用，减少光伏器件的制作对TFT器件阵列的影响。
步骤8、在透明绝缘层上形成TFT阵列。
所述TFT阵列可选用任何一种现有技术，均可实现本发明的技术效果，在此步骤赘述。
请参阅图2，本发明还提供一种具有嵌入式光伏电池的阵列基板，包括：基板20、设于基板20上的光伏电池40、设于光伏电池40上的TFT阵列60及设于光伏电池40与TFT阵列60之间的透明绝缘层80。
所述光伏电池40包括：透明导电层42、形成于透明导电层42上的导电增强层44、形成于导电增强层44上的光伏层46及形成于光伏层46上的金属层48。
在本实施例中，所述基板20为玻璃基板；所述透明绝缘层80为氮化硅层，用于绝缘隔离光伏电池40与TFT阵列60。
所述透明导电层42为氧化铟锡层；所述导电增强层44为3，4-乙撑二氧噻吩单体聚合物层，用于增强空穴导电能力；所述光伏层46为有机聚合物光伏层、有机小分子光伏层或P-N结型光伏层，用于吸收光能；所述金属层48为铝层，为光伏电池的阴极电极材料。
综上所述，本发明具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列基板，通过在基板上形成一光伏电池，再在该光伏电池上形成TFT阵列，其以简单的制程将光伏电池嵌入阵列基板中，进而利用背光源发出的光线为液晶显示面板元件或配件供电，充分利用背光源所发出的光能，节省了对外部电能的消耗。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (4)

1.一种具有嵌入式光伏电池的阵列基板的制作方法，其特征在于，包括以下步骤：
步骤1、提供基板；
步骤2、在基板上形成透明导电层；
步骤3、在透明导电层上形成导电增强层；
步骤4、在导电增强层上形成光伏层；
步骤5、在光伏层形成金属层；
步骤6、通过光罩制程在金属层、光伏层、导电增强层及透明导电层上形成开口；
步骤7、在金属层上形成透明绝缘层；
步骤8、在透明绝缘层上形成TFT阵列；
所述导电增强层为3,4-乙撑二氧噻吩单体聚合物层，其通过涂布方式形成于透明导电层上；
所述光伏层为有机聚合物光伏层、有机小分子光伏层或P-N结型光伏层，其通过涂布方式形成于导电增强层上；
所述透明绝缘层为氮化硅层，其通过涂布方式形成于金属层上；
所述透明导电层为氧化铟锡层，其通过溅射工艺形成于基板上；
所述金属层为铝层，其通过溅射工艺形成于光伏层上。
2.如权利要求1所述的具有嵌入式光伏电池的阵列基板的制作方法，其特征在于，所述基板为玻璃基板。
3.如权利要求1所述的具有嵌入式光伏电池的阵列基板的制作方法，其特征在于，所述光罩制程包括曝光、显影及蚀刻工艺。
4.一种具有嵌入式光伏电池的阵列基板，其特征在于，包括：基板、设于基板上的光伏电池、设于光伏电池上的TFT阵列及设于光伏电池与TFT阵列之间的透明绝缘层，所述光伏电池包括透明导电层、形成于透明导电层上的导电增强层、形成于导电增强层上的光伏层及形成于光伏层上的金属层；
所述基板为玻璃基板；所述透明导电层为氧化铟锡层；所述导电增强层为3,4-乙撑二氧噻吩单体聚合物层；所述光伏层为有机聚合物光伏层、有机小分子光伏层或P-N结型光伏层；所述金属层为铝层；所述透明绝缘层为氮化硅层。
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Publication number Priority date Publication date Assignee Title
CN103760707A (zh) * 2014-01-09 2014-04-30 北京京东方光电科技有限公司 一种阵列基板、液晶显示面板及显示装置
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CN108615751A (zh) * 2018-05-30 2018-10-02 信利光电股份有限公司 一种显示模组
CN109841662A (zh) * 2019-02-21 2019-06-04 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN109887910A (zh) * 2019-03-15 2019-06-14 湖北美格新能源科技有限公司 一种光伏显示屏

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19822024A1 (de) * 1998-05-15 1999-11-18 Aventis Res & Tech Gmbh & Co Chipkarte mit Anzeigevorrichtung und autarker Energieversorgung
CN101127362A (zh) * 2007-10-09 2008-02-20 友达光电股份有限公司 阵列基板及液晶显示器
CN101520584A (zh) * 2009-03-30 2009-09-02 昆山龙腾光电有限公司 液晶显示面板、液晶显示装置及其制造方法
CN102253547A (zh) * 2010-05-21 2011-11-23 北京京东方光电科技有限公司 阵列基板及其制造方法和液晶显示器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100426554C (zh) * 2005-04-15 2008-10-15 友达光电股份有限公司 有机发光显示器
WO2006137337A1 (ja) * 2005-06-23 2006-12-28 Tpo Hong Kong Holding Limited 光電変換機能を有する液晶表示装置
CN101685218B (zh) * 2008-09-24 2012-04-04 北京京东方光电科技有限公司 液晶显示面板阵列基板及其制造方法
US9147852B2 (en) * 2009-03-06 2015-09-29 University Of Florida Research Foundation, Inc. Air stable organic-inorganic nanoparticles hybrid solar cells
US8334456B2 (en) * 2009-05-21 2012-12-18 Polyera Corporation Conjugated polymers and their use in optoelectronic devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19822024A1 (de) * 1998-05-15 1999-11-18 Aventis Res & Tech Gmbh & Co Chipkarte mit Anzeigevorrichtung und autarker Energieversorgung
CN101127362A (zh) * 2007-10-09 2008-02-20 友达光电股份有限公司 阵列基板及液晶显示器
CN101520584A (zh) * 2009-03-30 2009-09-02 昆山龙腾光电有限公司 液晶显示面板、液晶显示装置及其制造方法
CN102253547A (zh) * 2010-05-21 2011-11-23 北京京东方光电科技有限公司 阵列基板及其制造方法和液晶显示器

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