CN102738080B - 具有嵌入式光伏电池的阵列基板的制作方法 - Google Patents
具有嵌入式光伏电池的阵列基板的制作方法 Download PDFInfo
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- CN102738080B CN102738080B CN201210253264.9A CN201210253264A CN102738080B CN 102738080 B CN102738080 B CN 102738080B CN 201210253264 A CN201210253264 A CN 201210253264A CN 102738080 B CN102738080 B CN 102738080B
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- 238000000034 method Methods 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 31
- 230000000873 masking effect Effects 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 238000005984 hydrogenation reaction Methods 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000005224 laser annealing Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 74
- 230000004888 barrier function Effects 0.000 claims description 28
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 239000012212 insulator Substances 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000012044 organic layer Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 abstract description 23
- 238000009413 insulation Methods 0.000 abstract 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 6
- 239000012528 membrane Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003760 hair shine Effects 0.000 description 3
- 230000005142 aphototropism Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13324—Circuits comprising solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210253264.9A CN102738080B (zh) | 2012-07-20 | 2012-07-20 | 具有嵌入式光伏电池的阵列基板的制作方法 |
US13/635,403 US8859346B2 (en) | 2012-07-20 | 2012-07-27 | Method for manufacturing array substrate with embedded photovoltaic cell |
PCT/CN2012/079245 WO2014012269A1 (zh) | 2012-07-20 | 2012-07-27 | 具有嵌入式光伏电池的阵列基板的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210253264.9A CN102738080B (zh) | 2012-07-20 | 2012-07-20 | 具有嵌入式光伏电池的阵列基板的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102738080A CN102738080A (zh) | 2012-10-17 |
CN102738080B true CN102738080B (zh) | 2014-06-18 |
Family
ID=46993311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201210253264.9A Expired - Fee Related CN102738080B (zh) | 2012-07-20 | 2012-07-20 | 具有嵌入式光伏电池的阵列基板的制作方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102738080B (zh) |
WO (1) | WO2014012269A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104157656A (zh) * | 2014-07-29 | 2014-11-19 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
CN105489186B (zh) | 2016-01-25 | 2018-03-30 | 京东方科技集团股份有限公司 | 一种像素电路及其驱动方法、显示装置 |
CN107664894A (zh) * | 2016-07-29 | 2018-02-06 | 元太科技工业股份有限公司 | 显示装置及其制作方法 |
TWI588790B (zh) | 2016-07-29 | 2017-06-21 | 元太科技工業股份有限公司 | 顯示裝置及其製作方法 |
CN107895713B (zh) * | 2017-11-30 | 2020-05-05 | 深圳市华星光电半导体显示技术有限公司 | Tft基板制作方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4043002B2 (ja) * | 1997-09-20 | 2008-02-06 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法並びに表示装置を用いた電子機器 |
TWI234027B (en) * | 2000-06-14 | 2005-06-11 | Hannstar Display Corp | Liquid crystal display device |
JP2008145447A (ja) * | 2005-03-29 | 2008-06-26 | Sharp Corp | アクティブマトリクス基板、表示装置、および電子機器 |
US20070102035A1 (en) * | 2005-10-31 | 2007-05-10 | Xiai (Charles) Yang | Method and Structure for Integrated Solar Cell LCD Panel |
CN200959057Y (zh) * | 2006-07-18 | 2007-10-10 | 胜华科技股份有限公司 | 具有背光回收特性的液晶显示模块 |
JP5215559B2 (ja) * | 2006-12-27 | 2013-06-19 | エルジー ディスプレイ カンパニー リミテッド | 表示装置 |
CN100511692C (zh) * | 2007-10-09 | 2009-07-08 | 友达光电股份有限公司 | 阵列基板及液晶显示器 |
CN101685218B (zh) * | 2008-09-24 | 2012-04-04 | 北京京东方光电科技有限公司 | 液晶显示面板阵列基板及其制造方法 |
CN101813849B (zh) * | 2009-02-19 | 2013-03-13 | 北京京东方光电科技有限公司 | 彩膜基板及其制造方法和液晶面板 |
CN101614896B (zh) * | 2009-06-22 | 2011-08-31 | 友达光电股份有限公司 | 薄膜晶体管数组基板、显示面板、液晶显示装置及其制作方法 |
CN101995691B (zh) * | 2009-08-20 | 2013-05-15 | 上海天马微电子有限公司 | 液晶显示装置 |
CN102253547B (zh) * | 2010-05-21 | 2015-03-11 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和液晶显示器 |
CN102445804A (zh) * | 2010-09-30 | 2012-05-09 | 联胜(中国)科技有限公司 | 显示装置 |
CN102569192B (zh) * | 2012-03-06 | 2014-04-09 | 深圳市华星光电技术有限公司 | 半穿半反液晶显示器的阵列基板制造方法 |
CN102569191B (zh) * | 2012-03-06 | 2013-09-04 | 深圳市华星光电技术有限公司 | 半穿半反液晶显示器的阵列基板制造方法 |
CN102543866B (zh) * | 2012-03-06 | 2013-08-28 | 深圳市华星光电技术有限公司 | 穿透式液晶显示器的阵列基板制造方法 |
-
2012
- 2012-07-20 CN CN201210253264.9A patent/CN102738080B/zh not_active Expired - Fee Related
- 2012-07-27 WO PCT/CN2012/079245 patent/WO2014012269A1/zh active Application Filing
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CN102738080A (zh) | 2012-10-17 |
WO2014012269A1 (zh) | 2014-01-23 |
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