TW200704817A - Deposition apparatus and deposition method - Google Patents

Deposition apparatus and deposition method

Info

Publication number
TW200704817A
TW200704817A TW095112245A TW95112245A TW200704817A TW 200704817 A TW200704817 A TW 200704817A TW 095112245 A TW095112245 A TW 095112245A TW 95112245 A TW95112245 A TW 95112245A TW 200704817 A TW200704817 A TW 200704817A
Authority
TW
Taiwan
Prior art keywords
deposition
organic
chambers
chamber
material chambers
Prior art date
Application number
TW095112245A
Other languages
English (en)
Inventor
Tadahiro Ohmi
Takaaki Matsuoka
Shozo Nakayama
Hironori Ito
Original Assignee
Univ Tohoku
Tokyo Electron Ltd
Toyota Jidoshokki Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Tohoku, Tokyo Electron Ltd, Toyota Jidoshokki Kk filed Critical Univ Tohoku
Publication of TW200704817A publication Critical patent/TW200704817A/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
TW095112245A 2005-04-07 2006-04-06 Deposition apparatus and deposition method TW200704817A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005110760A JP4911555B2 (ja) 2005-04-07 2005-04-07 成膜装置および成膜方法

Publications (1)

Publication Number Publication Date
TW200704817A true TW200704817A (en) 2007-02-01

Family

ID=37086844

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112245A TW200704817A (en) 2005-04-07 2006-04-06 Deposition apparatus and deposition method

Country Status (7)

Country Link
US (2) US20090041929A1 (zh)
EP (1) EP1879431A4 (zh)
JP (1) JP4911555B2 (zh)
KR (1) KR101011961B1 (zh)
CN (1) CN101155944B (zh)
TW (1) TW200704817A (zh)
WO (1) WO2006109562A1 (zh)

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JP5568729B2 (ja) 2005-09-06 2014-08-13 国立大学法人東北大学 成膜装置および成膜方法
EP1930465A4 (en) 2005-09-06 2010-04-07 Univ Tohoku FILM MATERIAL AND PREDICTION METHOD RELATED TO FILM MATERIAL
JP5020650B2 (ja) * 2007-02-01 2012-09-05 東京エレクトロン株式会社 蒸着装置、蒸着方法および蒸着装置の製造方法
EP2190264A4 (en) * 2007-09-10 2011-11-23 Ulvac Inc EXPANSION UNIT
TW200942639A (en) * 2007-12-07 2009-10-16 Jusung Eng Co Ltd Deposition material supplying module and thin film deposition system having the same
US20110183069A1 (en) * 2008-09-30 2011-07-28 Tokyo Electron Limited Deposition apparatus, deposition method, and storage medium having program stored therein
JP2011049507A (ja) * 2009-08-29 2011-03-10 Tokyo Electron Ltd ロードロック装置及び処理システム
JP2012052187A (ja) * 2010-09-01 2012-03-15 Kaneka Corp 蒸着装置、成膜方法及び有機el装置の製造方法
JP5661416B2 (ja) * 2010-10-15 2015-01-28 キヤノン株式会社 蒸着装置
TWI458843B (zh) * 2011-10-06 2014-11-01 Ind Tech Res Inst 蒸鍍裝置與有機薄膜的形成方法
KR20130096370A (ko) * 2012-02-22 2013-08-30 삼성디스플레이 주식회사 유기물 정제장치
JP5953280B2 (ja) * 2012-10-17 2016-07-20 富士フイルム株式会社 有機材料の蒸着装置
KR101467195B1 (ko) * 2013-05-14 2014-12-01 주식회사 아바코 가스 분사기 및 이를 포함하는 박막 증착 장치
JP6358446B2 (ja) * 2014-03-11 2018-07-18 株式会社Joled 蒸着装置及びその制御方法、蒸着装置を用いた蒸着方法、及びデバイスの製造方法
JP6241903B2 (ja) 2014-03-11 2017-12-06 株式会社Joled 蒸着装置及び蒸着装置を用いた蒸着方法、及びデバイスの製造方法
EP2960059B1 (en) 2014-06-25 2018-10-24 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US11220737B2 (en) 2014-06-25 2022-01-11 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US11267012B2 (en) * 2014-06-25 2022-03-08 Universal Display Corporation Spatial control of vapor condensation using convection
DE102014109195A1 (de) * 2014-07-01 2016-01-07 Aixtron Se Vorrichtung und Verfahren zum Erzeugen eines Dampfes aus mehreren flüssigen oder festen Ausgangsstoffen für eine CVD- oder PVD-Einrichtung
DE102014109194A1 (de) * 2014-07-01 2016-01-07 Aixtron Se Vorrichtung und Verfahren zum Erzeugen eines Dampfes für eine CVD- oder PVD-Einrichtung
US10566534B2 (en) 2015-10-12 2020-02-18 Universal Display Corporation Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP)
JP2022048820A (ja) * 2020-09-15 2022-03-28 東京エレクトロン株式会社 原料供給装置及び原料供給方法
CN111957075A (zh) * 2020-09-17 2020-11-20 潍坊潍森纤维新材料有限公司 一种粘胶快速脱气泡系统及脱气泡方法

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JPS60151273A (ja) * 1984-01-19 1985-08-09 トヨタ自動車株式会社 セラミツク被膜付き金属化合物の微粉末の製造方法
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US4640221A (en) * 1985-10-30 1987-02-03 International Business Machines Corporation Vacuum deposition system with improved mass flow control
JPH09246194A (ja) * 1996-03-05 1997-09-19 Sony Corp 有機金属化合物原料用容器、有機金属化合物原料用複合容器および有機金属化学気相成長装置
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JP2001214270A (ja) * 2000-01-28 2001-08-07 Horiba Ltd Pzt薄膜の合成方法およびplzt薄膜の合成方法
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KR100332313B1 (ko) * 2000-06-24 2002-04-12 서성기 Ald 박막증착장치 및 증착방법
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JP2004010990A (ja) * 2002-06-10 2004-01-15 Sony Corp 薄膜形成装置
JP2004010989A (ja) * 2002-06-10 2004-01-15 Sony Corp 薄膜形成装置
KR100473806B1 (ko) 2002-09-28 2005-03-10 한국전자통신연구원 유기물 박막 및 유기물 소자를 위한 대면적 유기물 기상증착 장치 및 제조 방법
JP2004143521A (ja) * 2002-10-24 2004-05-20 Sony Corp 薄膜形成装置

Also Published As

Publication number Publication date
KR101011961B1 (ko) 2011-01-31
JP4911555B2 (ja) 2012-04-04
JP2006291258A (ja) 2006-10-26
CN101155944B (zh) 2013-04-03
US20110268870A1 (en) 2011-11-03
EP1879431A4 (en) 2009-10-28
KR20070113299A (ko) 2007-11-28
CN101155944A (zh) 2008-04-02
EP1879431A1 (en) 2008-01-16
US20090041929A1 (en) 2009-02-12
WO2006109562A1 (ja) 2006-10-19

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