TW200641075A - Film, silica film and method of forming the same, composition for forming silica film, and electronic part - Google Patents
Film, silica film and method of forming the same, composition for forming silica film, and electronic partInfo
- Publication number
- TW200641075A TW200641075A TW094145595A TW94145595A TW200641075A TW 200641075 A TW200641075 A TW 200641075A TW 094145595 A TW094145595 A TW 094145595A TW 94145595 A TW94145595 A TW 94145595A TW 200641075 A TW200641075 A TW 200641075A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- forming
- silica film
- composition
- same
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D201/00—Coating compositions based on unspecified macromolecular compounds
- C09D201/02—Coating compositions based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
- C09D201/10—Coating compositions based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing hydrolysable silane groups
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/02—Polysilicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/17—Amines; Quaternary ammonium compounds
- C08K5/19—Quaternary ammonium compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
- H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Paints Or Removers (AREA)
- Silicon Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004369221 | 2004-12-21 | ||
| JP2005002382 | 2005-01-07 | ||
| JP2005114558 | 2005-04-12 | ||
| JP2005231202 | 2005-08-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200641075A true TW200641075A (en) | 2006-12-01 |
| TWI337616B TWI337616B (https=) | 2011-02-21 |
Family
ID=36601779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094145595A TW200641075A (en) | 2004-12-21 | 2005-12-21 | Film, silica film and method of forming the same, composition for forming silica film, and electronic part |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20080260956A1 (https=) |
| EP (1) | EP1829945A4 (https=) |
| JP (1) | JPWO2006068181A1 (https=) |
| KR (2) | KR100996324B1 (https=) |
| TW (1) | TW200641075A (https=) |
| WO (1) | WO2006068181A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI872253B (zh) * | 2020-08-28 | 2025-02-11 | 日商牛尾電機股份有限公司 | 準分子燈 |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8901268B2 (en) | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
| JP2006213908A (ja) * | 2004-12-21 | 2006-08-17 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品 |
| EP2123445A4 (en) * | 2007-02-05 | 2012-04-11 | Konica Minolta Holdings Inc | TRANSPARENT FILM THAT IS WATERPROOFABLE AND METHOD FOR PRODUCING THE SAME |
| US20100009147A1 (en) * | 2007-02-05 | 2010-01-14 | Kazuhiro Fukuda | Transparent gas barrier film |
| EP2123446A4 (en) * | 2007-02-06 | 2012-04-11 | Konica Minolta Holdings Inc | TRANSPARENT GASPERRFILM AND METHOD FOR PRODUCING A TRANSLUCENT GASPERRFILM |
| US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
| TWI439494B (zh) * | 2007-02-27 | 2014-06-01 | Braggone Oy | 產生有機矽氧烷聚合物的方法 |
| KR101260945B1 (ko) * | 2007-07-09 | 2013-05-06 | 삼성전자주식회사 | 실록산 폴리머 조성물 및 이를 이용한 커패시터 제조 방법 |
| DE102007054627A1 (de) * | 2007-11-15 | 2009-05-20 | Cht R. Beitlich Gmbh | Wasserverträgliche Sole zur Beschichtung verschiedener Substrate |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| JP2011052170A (ja) * | 2009-09-04 | 2011-03-17 | Toagosei Co Ltd | 硬化性塗布組成物および硬化被膜 |
| CN102666707B (zh) | 2009-11-19 | 2015-04-01 | 住友橡胶工业株式会社 | 轮胎用橡胶组合物及充气轮胎 |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| US9196849B2 (en) * | 2013-01-09 | 2015-11-24 | Research & Business Foundation Sungkyunkwan University | Polymer/inorganic multi-layer encapsulation film |
| JP2016155882A (ja) * | 2013-07-11 | 2016-09-01 | 日産化学工業株式会社 | 高屈折率膜形成組成物 |
| KR101506801B1 (ko) * | 2013-08-19 | 2015-03-30 | 성균관대학교산학협력단 | 고강도 저유전 플라즈마 중합체 박막 및 그 제조 방법 |
| US9371430B2 (en) | 2013-08-19 | 2016-06-21 | Research & Business Foundation Sungkyunkwan University | Porous film with high hardness and a low dielectric constant and preparation method thereof |
| WO2015118995A1 (ja) * | 2014-02-07 | 2015-08-13 | 株式会社ダイセル | シリコーン溶解用溶剤 |
| JP2014224266A (ja) * | 2014-08-04 | 2014-12-04 | 東亞合成株式会社 | 硬化性塗布組成物および硬化被膜 |
| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
| KR20220079595A (ko) * | 2019-10-04 | 2022-06-13 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 평탄화 방법 및 조성물 |
| KR102261036B1 (ko) * | 2020-10-20 | 2021-06-04 | 엄종호 | 대형유리에 적용된 샤시 연결용 패드 조성물 |
| US12087616B2 (en) * | 2022-01-27 | 2024-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Air gap formation method |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5152834A (en) * | 1990-09-14 | 1992-10-06 | Ncr Corporation | Spin-on glass composition |
| EP1035183B1 (en) * | 1998-09-25 | 2009-11-25 | JGC Catalysts and Chemicals Ltd. | Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film |
| JP2000272915A (ja) * | 1999-03-24 | 2000-10-03 | Hitachi Chem Co Ltd | シリカ系被膜形成用塗布液、シリカ系被膜の製造法、シリカ系被膜及び半導体装置 |
| JP2000336312A (ja) * | 1999-05-28 | 2000-12-05 | Hitachi Chem Co Ltd | シリカ系被膜形成用塗布液、シリカ系被膜の製造法及び半導体装置 |
| JP2001055554A (ja) * | 1999-08-20 | 2001-02-27 | Jsr Corp | 膜形成用組成物および絶縁膜形成用材料 |
| JP2001098218A (ja) * | 1999-09-28 | 2001-04-10 | Hitachi Chem Co Ltd | シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品 |
| JP2001262062A (ja) * | 2000-03-14 | 2001-09-26 | Hitachi Chem Co Ltd | シリカ系被膜形成用塗布液、シリカ系被膜の製造法、シリカ系被膜、これを用いた半導体素子及び多層配線板 |
| JP4697363B2 (ja) * | 2000-08-21 | 2011-06-08 | Jsr株式会社 | 膜形成用組成物および絶縁膜形成用材料 |
| JP4745490B2 (ja) * | 2000-09-13 | 2011-08-10 | 宇部日東化成株式会社 | シリカ系コーティング剤、シリカ薄膜の製造方法およびシリカ薄膜 |
| JP2002129103A (ja) * | 2000-10-23 | 2002-05-09 | Jsr Corp | 膜形成用組成物および絶縁膜形成用材料 |
| JP2002201416A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Chem Co Ltd | 半導体用シリカ系被膜形成用塗布液、半導体用シリカ系被膜及び半導体装置 |
| JP2002201415A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Chem Co Ltd | シリカ系被膜形成用塗布液、シリカ系被膜の製造方法及び半導体装置 |
| JP2003041191A (ja) * | 2001-07-30 | 2003-02-13 | Jsr Corp | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
| JP2003064307A (ja) * | 2001-08-28 | 2003-03-05 | Hitachi Chem Co Ltd | シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品 |
| JP4972834B2 (ja) * | 2001-08-28 | 2012-07-11 | 日立化成工業株式会社 | シロキサン樹脂 |
| JP3702842B2 (ja) * | 2001-12-04 | 2005-10-05 | 日立化成工業株式会社 | シリカ系被膜形成用組成物、シリカ系被膜、シリカ系被膜の製造方法及び電子部品 |
| KR100820992B1 (ko) * | 2002-02-27 | 2008-04-10 | 히다치 가세고교 가부시끼가이샤 | 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품 |
| US7682701B2 (en) * | 2002-02-27 | 2010-03-23 | Hitachi Chemical Co., Ltd. | Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts |
| US7687590B2 (en) * | 2002-02-27 | 2010-03-30 | Hitachi Chemical Company, Ltd. | Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts |
| JP4110797B2 (ja) * | 2002-02-27 | 2008-07-02 | 日立化成工業株式会社 | シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品 |
| JP3966026B2 (ja) * | 2002-03-06 | 2007-08-29 | 日立化成工業株式会社 | シリカ系被膜形成用組成物、シリカ系被膜及びその製造方法、並びに電子部品 |
| JP2004277508A (ja) * | 2003-03-13 | 2004-10-07 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法並びにシリカ系被膜を備える電子部品 |
| JP3674041B2 (ja) | 2003-03-13 | 2005-07-20 | 日立化成工業株式会社 | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品 |
| JP2004277502A (ja) * | 2003-03-13 | 2004-10-07 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法並びにシリカ系被膜を備える電子部品 |
| JP2004311532A (ja) * | 2003-04-02 | 2004-11-04 | Semiconductor Leading Edge Technologies Inc | 多孔質膜の形成方法 |
| JP2004307694A (ja) * | 2003-04-09 | 2004-11-04 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置。 |
| JP2006213908A (ja) * | 2004-12-21 | 2006-08-17 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品 |
| US20070099005A1 (en) * | 2005-10-31 | 2007-05-03 | Honeywell International Inc. | Thick crack-free silica film by colloidal silica incorporation |
-
2005
- 2005-12-21 US US11/793,593 patent/US20080260956A1/en not_active Abandoned
- 2005-12-21 EP EP05819850A patent/EP1829945A4/en not_active Withdrawn
- 2005-12-21 WO PCT/JP2005/023499 patent/WO2006068181A1/ja not_active Ceased
- 2005-12-21 JP JP2006519675A patent/JPWO2006068181A1/ja active Pending
- 2005-12-21 KR KR1020097012168A patent/KR100996324B1/ko not_active Expired - Fee Related
- 2005-12-21 TW TW094145595A patent/TW200641075A/zh not_active IP Right Cessation
-
2007
- 2007-06-14 KR KR1020077013336A patent/KR100912566B1/ko not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI872253B (zh) * | 2020-08-28 | 2025-02-11 | 日商牛尾電機股份有限公司 | 準分子燈 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100912566B1 (ko) | 2009-08-19 |
| WO2006068181A1 (ja) | 2006-06-29 |
| KR20090074280A (ko) | 2009-07-06 |
| JPWO2006068181A1 (ja) | 2008-06-12 |
| EP1829945A4 (en) | 2011-03-23 |
| EP1829945A1 (en) | 2007-09-05 |
| KR20070086138A (ko) | 2007-08-27 |
| KR100996324B1 (ko) | 2010-11-23 |
| US20080260956A1 (en) | 2008-10-23 |
| TWI337616B (https=) | 2011-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200641075A (en) | Film, silica film and method of forming the same, composition for forming silica film, and electronic part | |
| TW200514828A (en) | Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic part | |
| MX2007004085A (es) | Proceso para el recubrimiento de superficies metalicas. | |
| WO2007017195A3 (de) | Metalleffektpigmente mit anorganisch/organischer mischschicht, verfahren zur herstellung solcher metalleffektpigmente und deren verwendung | |
| AU2003219295A1 (en) | Method and apparatus for the formation of hydrophobic surfaces | |
| TWI339673B (en) | Liquid-repellent, alkali-resistant coating composition and coating suitable for pattern forming | |
| EP1845416A3 (en) | Coating compositions for photolithography | |
| DE50103534D1 (de) | Verfahren zur herstellung eines mikrostrukturierten oberflächenreliefs durch prägen thixotroper schichten und mikrostrukturiertes oberflächenrelief | |
| MXPA05009075A (es) | Metodo para recubrir superficies metalicas con una composicion rica en polimero. | |
| WO2005104259A3 (de) | Verkapselung für ein organisches elekronisches bauteil, herstellungsverfahren dazu, sowie verwendung | |
| AU2003244361A1 (en) | Method for depositing inorganic/organic films | |
| WO2008134315A3 (en) | Process and apparatus for drying & curing a container coating and containers produced therefrom | |
| WO2009035087A1 (ja) | ケイ素含有微細パターン形成用組成物およびそれを用いた微細パターン形成方法 | |
| DE602004009811D1 (de) | Härtbarer alkanolaminhaltiger epoxidpulverlack | |
| TW200622499A (en) | Method for forming anti-reflective coating | |
| WO2008143253A1 (ja) | 接着剤組成物及びこれを用いた接着フィルム | |
| ATE395985T1 (de) | Beschichtungsverfahren und beschichtungsmittel | |
| WO2007089223A3 (en) | Ultralow dielectric constant layer with controlled biaxial stress | |
| TW200622496A (en) | Method for forming anti-reflective coating | |
| TW200721524A (en) | Method of releasing high temperature films and/or devices from metallic substrates | |
| DE602006005251D1 (de) | Verfahren zur herstellung von mit uv-aktiven beschichtungen versehenen orientierten polymerfolien | |
| WO2010005970A3 (en) | Method for coating a metallic substrate with a powder coating composition and an autodepositable coating composition | |
| WO2005000980A3 (en) | Paint formulation for a low surface energy substrate | |
| DE60141249D1 (de) | Beschichtungssystem enthaltend modifizierte vernetzer | |
| TW200736838A (en) | Substrate, method for producing the same, and patterning process using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |