WO2009035087A1 - ケイ素含有微細パターン形成用組成物およびそれを用いた微細パターン形成方法 - Google Patents

ケイ素含有微細パターン形成用組成物およびそれを用いた微細パターン形成方法 Download PDF

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Publication number
WO2009035087A1
WO2009035087A1 PCT/JP2008/066556 JP2008066556W WO2009035087A1 WO 2009035087 A1 WO2009035087 A1 WO 2009035087A1 JP 2008066556 W JP2008066556 W JP 2008066556W WO 2009035087 A1 WO2009035087 A1 WO 2009035087A1
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WO
WIPO (PCT)
Prior art keywords
fine pattern
forming
composition
same
silicon
Prior art date
Application number
PCT/JP2008/066556
Other languages
English (en)
French (fr)
Inventor
Ralph. R Dammel
Wenbing Kang
Yasuo Shimizu
Tomonori Ishikawa
Original Assignee
Az Electronic Materials (Japan) K.K.
Az Electronic Materials Usa Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials (Japan) K.K., Az Electronic Materials Usa Corp. filed Critical Az Electronic Materials (Japan) K.K.
Priority to CN200880106486XA priority Critical patent/CN101802718B/zh
Priority to US12/733,451 priority patent/US8663906B2/en
Priority to KR1020107004988A priority patent/KR101438384B1/ko
Priority to EP08830189.0A priority patent/EP2199861B1/en
Publication of WO2009035087A1 publication Critical patent/WO2009035087A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

　本発明は、ドライエッチング耐性の高い微細パターンを形成させるための微細パターン形成用組成物と、その微細パターンを形成させる方法を提供するものである。この組成物は、シラザン結合を有する繰り返し単位を含んでなる樹脂と、溶剤とを含んでなる。また、本発明による微細パターン形成方法は、その組成物を用いてレジストパターンを処理する工程を含んでなる。
PCT/JP2008/066556 2007-09-12 2008-09-12 ケイ素含有微細パターン形成用組成物およびそれを用いた微細パターン形成方法 WO2009035087A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880106486XA CN101802718B (zh) 2007-09-12 2008-09-12 含硅的精细图案形成用组合物以及使用它的精细图案形成方法
US12/733,451 US8663906B2 (en) 2007-09-12 2008-09-12 Silicon-containing composition for fine pattern formation and method for fine pattern formation using the same
KR1020107004988A KR101438384B1 (ko) 2007-09-12 2008-09-12 규소 함유 미세 패턴 형성용 조성물 및 이를 사용한 미세 패턴 형성 방법
EP08830189.0A EP2199861B1 (en) 2007-09-12 2008-09-12 Method for forming silicon-containing fine pattern

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-236974 2007-09-12
JP2007236974A JP5058733B2 (ja) 2007-09-12 2007-09-12 ケイ素含有微細パターン形成用組成物を用いた微細パターン形成方法

Publications (1)

Publication Number Publication Date
WO2009035087A1 true WO2009035087A1 (ja) 2009-03-19

Family

ID=40452093

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066556 WO2009035087A1 (ja) 2007-09-12 2008-09-12 ケイ素含有微細パターン形成用組成物およびそれを用いた微細パターン形成方法

Country Status (8)

Country Link
US (1) US8663906B2 (ja)
EP (1) EP2199861B1 (ja)
JP (1) JP5058733B2 (ja)
KR (1) KR101438384B1 (ja)
CN (1) CN101802718B (ja)
MY (1) MY150435A (ja)
TW (1) TWI369585B (ja)
WO (1) WO2009035087A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010250118A (ja) * 2009-04-16 2010-11-04 Az Electronic Materials Kk 微細パターン形成方法
JP2012517612A (ja) * 2009-02-10 2012-08-02 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション ポリシラザンを用いたリバーストーン画像の形成のためのハードマスク方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452419B (zh) * 2008-01-28 2014-09-11 Az Electronic Mat Ip Japan Kk 細微圖案光罩及其製造方法、及使用其之細微圖案形成方法
KR101835293B1 (ko) * 2010-09-03 2018-03-06 테트라썬, 아이엔씨. 광학코팅의 부분적 리프트-오프에 의한 광기전력 장치의 미세라인 금속화
JP5768397B2 (ja) * 2011-02-16 2015-08-26 三菱電機株式会社 半導体装置の製造方法
US8968586B2 (en) 2012-02-15 2015-03-03 Jsr Corporation Pattern-forming method
JP2012137778A (ja) * 2012-03-19 2012-07-19 Az Electronic Materials Ip Ltd ケイ素含有微細パターン形成用組成物
KR101902402B1 (ko) 2012-04-05 2018-09-28 삼성전자 주식회사 반도체 장치의 미세 패턴 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
JP6075724B2 (ja) * 2012-10-01 2017-02-08 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP5822986B2 (ja) * 2014-06-16 2015-11-25 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ レジスト被覆膜形成用材料
US9564326B2 (en) * 2014-07-17 2017-02-07 International Business Machines Corporation Lithography using interface reaction
KR102366801B1 (ko) 2015-03-31 2022-02-25 삼성전자주식회사 반도체 소자의 제조 방법
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture
KR102067082B1 (ko) 2017-01-19 2020-01-16 삼성에스디아이 주식회사 패턴 형성 방법 및 반도체 소자
WO2018220796A1 (ja) * 2017-06-01 2018-12-06 三菱電機株式会社 半導体装置の製造方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05166717A (ja) 1991-12-16 1993-07-02 Mitsubishi Electric Corp 微細パターン形成方法
JPH07191214A (ja) 1993-12-26 1995-07-28 Toyo Shigyo Kk 水性塗料の塗布方法および画像形成方法
JPH1073927A (ja) 1996-07-05 1998-03-17 Mitsubishi Electric Corp 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
JP2000267268A (ja) 1999-03-17 2000-09-29 Tokyo Ohka Kogyo Co Ltd 微細パターン形成材料
JP2001100428A (ja) 1999-09-27 2001-04-13 Mitsubishi Electric Corp 半導体装置の製造方法、微細パターン形成用薬液および半導体装置
JP2002006512A (ja) 2000-06-20 2002-01-09 Mitsubishi Electric Corp 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法
JP2003084459A (ja) 2001-07-05 2003-03-19 Tokyo Ohka Kogyo Co Ltd レジストパターン微細化用被覆形成剤及びそれを用いた微細レジストパターン形成方法
JP2003316019A (ja) * 2002-04-24 2003-11-06 Toshiba Corp パターン形成方法および半導体装置の製造方法
JP2004191465A (ja) 2002-12-09 2004-07-08 Fujitsu Ltd レジストパターンの形成方法並びに半導体装置及びその製造方法
WO2005116776A1 (ja) * 2004-05-26 2005-12-08 Jsr Corporation 微細パターン形成用樹脂組成物および微細パターン形成方法
JP2006060006A (ja) * 2004-08-19 2006-03-02 Fujitsu Ltd 半導体装置及びその製造方法、並びに、レジストパターンの形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09230600A (ja) * 1996-02-28 1997-09-05 Hitachi Ltd パターン形成方法
US20040081912A1 (en) * 1998-10-05 2004-04-29 Tatsuro Nagahara Photosensitive polysilazane composition and method of forming patterned polysilazane film
JP5020425B2 (ja) * 2000-04-25 2012-09-05 Ａｚエレクトロニックマテリアルズ株式会社 微細溝をシリカ質材料で埋封する方法
JP4722269B2 (ja) * 2000-08-29 2011-07-13 Ａｚエレクトロニックマテリアルズ株式会社 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法
KR100503527B1 (ko) * 2003-02-12 2005-07-26 삼성전자주식회사 퍼하이드로 폴리실라잔을 포함하는 반도체 소자 제조용조성물 및 이를 이용한 반도체 소자의 제조방법
TWI326114B (en) * 2003-07-18 2010-06-11 Az Electronic Materials Japan A phosphorous-containing silazane composition, a phosphorous-containing siliceous film, a phosphorous-containing siliceous filing material, a production method of a siliceous film and semiconductor device
EP1908599A1 (en) * 2005-07-25 2008-04-09 Think Laboratory Co., Ltd. Gravure platemaking roll and process for producing the same
TWI389250B (zh) * 2006-01-18 2013-03-11 Az Electronic Mat Ip Japan Kk 矽石質膜之製法及附有由它製造的矽石質膜之基板
JP2007216501A (ja) * 2006-02-16 2007-08-30 Kri Inc パターン形成用モールドの製造方法およびパターン形成用モールド
WO2008133105A1 (ja) * 2007-04-18 2008-11-06 Think Laboratory Co., Ltd. クッション性を有するグラビア版及びその製造方法
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05166717A (ja) 1991-12-16 1993-07-02 Mitsubishi Electric Corp 微細パターン形成方法
JPH07191214A (ja) 1993-12-26 1995-07-28 Toyo Shigyo Kk 水性塗料の塗布方法および画像形成方法
JPH1073927A (ja) 1996-07-05 1998-03-17 Mitsubishi Electric Corp 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
JP2000267268A (ja) 1999-03-17 2000-09-29 Tokyo Ohka Kogyo Co Ltd 微細パターン形成材料
JP2001100428A (ja) 1999-09-27 2001-04-13 Mitsubishi Electric Corp 半導体装置の製造方法、微細パターン形成用薬液および半導体装置
JP2002006512A (ja) 2000-06-20 2002-01-09 Mitsubishi Electric Corp 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法
JP2003084459A (ja) 2001-07-05 2003-03-19 Tokyo Ohka Kogyo Co Ltd レジストパターン微細化用被覆形成剤及びそれを用いた微細レジストパターン形成方法
JP2003316019A (ja) * 2002-04-24 2003-11-06 Toshiba Corp パターン形成方法および半導体装置の製造方法
JP2004191465A (ja) 2002-12-09 2004-07-08 Fujitsu Ltd レジストパターンの形成方法並びに半導体装置及びその製造方法
WO2005116776A1 (ja) * 2004-05-26 2005-12-08 Jsr Corporation 微細パターン形成用樹脂組成物および微細パターン形成方法
JP2006060006A (ja) * 2004-08-19 2006-03-02 Fujitsu Ltd 半導体装置及びその製造方法、並びに、レジストパターンの形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2199861A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012517612A (ja) * 2009-02-10 2012-08-02 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション ポリシラザンを用いたリバーストーン画像の形成のためのハードマスク方法
JP2010250118A (ja) * 2009-04-16 2010-11-04 Az Electronic Materials Kk 微細パターン形成方法

Also Published As

Publication number Publication date
EP2199861A4 (en) 2011-01-19
TWI369585B (en) 2012-08-01
CN101802718A (zh) 2010-08-11
CN101802718B (zh) 2012-07-04
KR101438384B1 (ko) 2014-09-05
KR20100056485A (ko) 2010-05-27
MY150435A (en) 2014-01-30
JP5058733B2 (ja) 2012-10-24
US8663906B2 (en) 2014-03-04
EP2199861A1 (en) 2010-06-23
JP2009069409A (ja) 2009-04-02
US20100255430A1 (en) 2010-10-07
EP2199861B1 (en) 2013-07-24
TW200916966A (en) 2009-04-16

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