TW200626888A - Defect inspection method - Google Patents

Defect inspection method

Info

Publication number
TW200626888A
TW200626888A TW094134913A TW94134913A TW200626888A TW 200626888 A TW200626888 A TW 200626888A TW 094134913 A TW094134913 A TW 094134913A TW 94134913 A TW94134913 A TW 94134913A TW 200626888 A TW200626888 A TW 200626888A
Authority
TW
Taiwan
Prior art keywords
wafer
light
patterns
polarized light
hole patterns
Prior art date
Application number
TW094134913A
Other languages
English (en)
Chinese (zh)
Inventor
Tekeo Oomori
Kazuhiko Fukazawa
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200626888A publication Critical patent/TW200626888A/zh

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/314Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513Liquid crystal panels

Landscapes

  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW094134913A 2004-10-06 2005-10-06 Defect inspection method TW200626888A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004322905A JP4901090B2 (ja) 2004-10-06 2004-10-06 欠陥検査方法及び欠陥検出装置

Publications (1)

Publication Number Publication Date
TW200626888A true TW200626888A (en) 2006-08-01

Family

ID=36375851

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094134913A TW200626888A (en) 2004-10-06 2005-10-06 Defect inspection method

Country Status (4)

Country Link
JP (1) JP4901090B2 (https=)
KR (2) KR20060052010A (https=)
CN (1) CN1758022A (https=)
TW (1) TW200626888A (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060099344A1 (en) 2004-11-09 2006-05-11 Eastman Kodak Company Controlling the vaporization of organic material
JP4548385B2 (ja) * 2006-05-10 2010-09-22 株式会社ニコン 表面検査装置
JP4692892B2 (ja) * 2006-06-01 2011-06-01 株式会社ニコン 表面検査装置
JP5201350B2 (ja) * 2006-07-14 2013-06-05 株式会社ニコン 表面検査装置
KR20090060435A (ko) * 2006-09-12 2009-06-12 루돌프 테크놀로지스 인코퍼레이티드 편광 이미징
WO2008152801A1 (ja) * 2007-06-13 2008-12-18 Nikon Corporation 検査装置、検査方法およびプログラム
WO2009054404A1 (ja) * 2007-10-23 2009-04-30 Shibaura Mechatronics Corporation 撮影画像に基づいた検査方法及び検査装置
WO2009125805A1 (ja) * 2008-04-09 2009-10-15 株式会社ニコン 表面検査方法および表面検査装置
JP2009300216A (ja) * 2008-06-12 2009-12-24 Nikon Corp 観察装置
JP5252286B2 (ja) * 2008-11-14 2013-07-31 株式会社ニコン 表面検査方法、表面検査装置および検査方法
TW201100787A (en) 2009-02-18 2011-01-01 Nikon Corp Surface examining device and surface examining method
WO2012081587A1 (ja) 2010-12-14 2012-06-21 株式会社ニコン 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス
JP6406492B2 (ja) * 2014-01-27 2018-10-17 株式会社ニコン 評価方法、評価装置、及び露光システム
US9599573B2 (en) * 2014-12-02 2017-03-21 Kla-Tencor Corporation Inspection systems and techniques with enhanced detection
CN108180826B (zh) * 2017-12-20 2023-12-22 深圳湾新科技有限公司 一种锂电池卷绕层边界的检测设备及检测方法
CN110132996A (zh) * 2019-06-06 2019-08-16 德淮半导体有限公司 缺陷检测装置及其检测方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS643545A (en) * 1987-06-26 1989-01-09 Hitachi Ltd Method and apparatus for inspection
JPS649306A (en) * 1987-07-01 1989-01-12 Fujitsu Ltd Detector for light transmitting fine pattern
JP3692685B2 (ja) * 1997-02-19 2005-09-07 株式会社ニコン 欠陥検査装置
JPH10325805A (ja) * 1997-05-23 1998-12-08 Nikon Corp 半導体ウエハの自動検査装置
JP3982017B2 (ja) * 1997-08-05 2007-09-26 株式会社ニコン 欠陥検査装置
JPH1164234A (ja) * 1997-08-20 1999-03-05 Advantest Corp 異物検出方法、および異物検出装置
KR100374762B1 (ko) * 1998-07-28 2003-03-04 히다치 덴시 엔지니어링 가부시키 가이샤 결함 검사 장치 및 그 방법
JP4184543B2 (ja) * 1999-06-10 2008-11-19 株式会社日立製作所 光学像検出方法および外観検査装置
JP3769996B2 (ja) * 1999-09-20 2006-04-26 三菱電機株式会社 欠陥検査用半導体基板、半導体基板の検査方法および半導体基板検査用モニター装置
JP2001165632A (ja) * 1999-12-03 2001-06-22 Sony Corp 検査装置及び検査方法
JP4153652B2 (ja) * 2000-10-05 2008-09-24 株式会社東芝 パターン評価装置及びパターン評価方法
JP2002257747A (ja) * 2001-02-27 2002-09-11 Matsushita Electric Ind Co Ltd 欠陥検査装置
KR100492159B1 (ko) * 2002-10-30 2005-06-02 삼성전자주식회사 기판 검사 장치
JP4183492B2 (ja) * 2002-11-27 2008-11-19 株式会社日立製作所 欠陥検査装置および欠陥検査方法

Also Published As

Publication number Publication date
KR20120036923A (ko) 2012-04-18
KR101275343B1 (ko) 2013-06-17
KR20060052010A (ko) 2006-05-19
JP4901090B2 (ja) 2012-03-21
JP2006105951A (ja) 2006-04-20
CN1758022A (zh) 2006-04-12

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