TW200616025A - A semiconductor structure electrostatic discharge protection - Google Patents

A semiconductor structure electrostatic discharge protection

Info

Publication number
TW200616025A
TW200616025A TW094121872A TW94121872A TW200616025A TW 200616025 A TW200616025 A TW 200616025A TW 094121872 A TW094121872 A TW 094121872A TW 94121872 A TW94121872 A TW 94121872A TW 200616025 A TW200616025 A TW 200616025A
Authority
TW
Taiwan
Prior art keywords
semiconductor structure
electrostatic discharge
discharge protection
ggnmos
source
Prior art date
Application number
TW094121872A
Other languages
English (en)
Inventor
Kuo-Feng Yu
Jian-Hsing Lee
Jiaw-Ren Shih
Fu-Chin Yang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200616025A publication Critical patent/TW200616025A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
    • H01L27/0274—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path involving a parasitic bipolar transistor triggered by the electrical biasing of the gate electrode of the field effect transistor, e.g. gate coupled transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW094121872A 2004-11-10 2005-06-29 A semiconductor structure electrostatic discharge protection TW200616025A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/985,532 US7518192B2 (en) 2004-11-10 2004-11-10 Asymmetrical layout structure for ESD protection

Publications (1)

Publication Number Publication Date
TW200616025A true TW200616025A (en) 2006-05-16

Family

ID=36315462

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121872A TW200616025A (en) 2004-11-10 2005-06-29 A semiconductor structure electrostatic discharge protection

Country Status (4)

Country Link
US (1) US7518192B2 (zh)
CN (1) CN100424873C (zh)
SG (2) SG157381A1 (zh)
TW (1) TW200616025A (zh)

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CN102983130A (zh) * 2011-09-05 2013-03-20 中芯国际集成电路制造(上海)有限公司 集成电路静电释放保护电路及其制造方法
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CN102790050B (zh) * 2011-12-12 2016-01-20 钜泉光电科技(上海)股份有限公司 具备静电防护功能的芯片
JP6033054B2 (ja) * 2012-11-22 2016-11-30 エスアイアイ・セミコンダクタ株式会社 半導体装置
US9449960B2 (en) 2013-07-08 2016-09-20 United Microelectronics Corp. Electrostatic discharge protection structure
KR102159924B1 (ko) 2014-10-14 2020-09-25 삼성전자 주식회사 Esd 보호 회로를 포함하는 반도체 장치
US9640527B2 (en) 2015-06-02 2017-05-02 United Microelectronics Corp. Electrostatic discharge protection device with parasitic bipolar junction transistors
US9734271B2 (en) * 2015-12-10 2017-08-15 Taiwan Semiconductor Manufacturing Company Ltd. Method of determining galvanic corrosion and interconnect structure in a semiconductor device for prevention of galvanic corrosion
CN109087906B (zh) 2017-06-13 2021-01-15 联华电子股份有限公司 电连接装置
CN108879634B (zh) * 2018-06-30 2022-03-04 唯捷创芯(天津)电子技术股份有限公司 一种浪涌保护器件及其组成的芯片、通信终端
US11043487B2 (en) 2018-08-30 2021-06-22 Taiwan Semiconductor Manufacturing Company Ltd. ESD protection circuit, semiconductor system including same, and method for operating same
CN110931480B (zh) * 2018-09-19 2024-06-07 长鑫存储技术有限公司 用于静电保护的晶体管元件及其制备方法和静电保护器件
CN112002691B (zh) * 2020-08-06 2022-10-25 杰华特微电子股份有限公司 半导体器件

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Also Published As

Publication number Publication date
US7518192B2 (en) 2009-04-14
SG122857A1 (en) 2006-06-29
SG157381A1 (en) 2009-12-29
CN100424873C (zh) 2008-10-08
US20060097330A1 (en) 2006-05-11
CN1773704A (zh) 2006-05-17

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