WO2009041558A1 - 静電気破壊保護素子、静電気破壊保護回路、半導体装置および半導体装置の製造方法 - Google Patents

静電気破壊保護素子、静電気破壊保護回路、半導体装置および半導体装置の製造方法 Download PDF

Info

Publication number
WO2009041558A1
WO2009041558A1 PCT/JP2008/067392 JP2008067392W WO2009041558A1 WO 2009041558 A1 WO2009041558 A1 WO 2009041558A1 JP 2008067392 W JP2008067392 W JP 2008067392W WO 2009041558 A1 WO2009041558 A1 WO 2009041558A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrostatic discharge
semiconductor device
discharge failure
conductivity type
region
Prior art date
Application number
PCT/JP2008/067392
Other languages
English (en)
French (fr)
Inventor
Shuji Fujiwara
Original Assignee
Sanyo Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co., Ltd. filed Critical Sanyo Electric Co., Ltd.
Priority to CN2008801081564A priority Critical patent/CN101803022B/zh
Priority to US12/678,354 priority patent/US8674445B2/en
Publication of WO2009041558A1 publication Critical patent/WO2009041558A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

　この静電気破壊保護素子（５０）は、第１導電型の半導体基板（１）の表面にチャネル領域（３）を挟むように所定の間隔を隔てて形成された第２導電型のソース領域（４）およびドレイン領域（５）と、ソース領域を覆うように形成された第１導電型のウェル領域（７）と、第１導電型のウェル領域の下方に形成された第２導電型の埋込層（８）と、ドレイン領域と埋込層との間に電流経路を構成するように形成された第２導電型の第１不純物領域（９ａ）と、ウェル領域と半導体基板とを分離する第２導電型の第２不純物領域（９ｂ）とを備えている。
PCT/JP2008/067392 2007-09-28 2008-09-26 静電気破壊保護素子、静電気破壊保護回路、半導体装置および半導体装置の製造方法 WO2009041558A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008801081564A CN101803022B (zh) 2007-09-28 2008-09-26 静电破坏保护元件、静电破坏保护电路、半导体装置及制法
US12/678,354 US8674445B2 (en) 2007-09-28 2008-09-26 Electrostatic discharge failure protective element, electrostatic discharge failure protective circuit, semiconductor device and semiconductor device manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-254288 2007-09-28
JP2007254288A JP5165321B2 (ja) 2007-09-28 2007-09-28 静電気破壊保護素子、静電気破壊保護回路、半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
WO2009041558A1 true WO2009041558A1 (ja) 2009-04-02

Family

ID=40511438

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067392 WO2009041558A1 (ja) 2007-09-28 2008-09-26 静電気破壊保護素子、静電気破壊保護回路、半導体装置および半導体装置の製造方法

Country Status (4)

Country Link
US (1) US8674445B2 (ja)
JP (1) JP5165321B2 (ja)
CN (1) CN101803022B (ja)
WO (1) WO2009041558A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104701373A (zh) * 2013-12-10 2015-06-10 中芯国际集成电路制造(上海)有限公司 Ldmos晶体管及其形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094322B (zh) * 2011-11-01 2015-10-14 上海华虹宏力半导体制造有限公司 能够用于静电保护的沟槽型绝缘栅场效应管结构
JP5849670B2 (ja) * 2011-12-09 2016-02-03 セイコーエプソン株式会社 半導体装置
CN104103685B (zh) * 2013-04-02 2018-07-06 中芯国际集成电路制造(上海)有限公司 一种具有降低纵向寄生晶体管效应的器件结构及其制作方法
TWI613708B (zh) * 2015-04-28 2018-02-01 新唐科技股份有限公司 半導體元件及其製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202196A (ja) * 1993-10-21 1995-08-04 Hyundai Electron Ind Co Ltd 静電放電消去回路のトランジスターおよびその製造方法
JPH1041469A (ja) * 1996-07-25 1998-02-13 Nec Corp 半導体装置
JP2000133799A (ja) * 1998-10-23 2000-05-12 Nec Corp 半導体静電保護素子及びその製造方法
JP2003197908A (ja) * 2001-09-12 2003-07-11 Seiko Instruments Inc 半導体素子及びその製造方法
JP2006074012A (ja) * 2004-08-06 2006-03-16 Renesas Technology Corp 双方向型静電気放電保護素子
JP2006202847A (ja) * 2005-01-18 2006-08-03 Toshiba Corp 半導体装置
JP2006319072A (ja) * 2005-05-11 2006-11-24 Denso Corp 半導体装置およびその設計方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6399990B1 (en) * 2000-03-21 2002-06-04 International Business Machines Corporation Isolated well ESD device
US6455902B1 (en) * 2000-12-06 2002-09-24 International Business Machines Corporation BiCMOS ESD circuit with subcollector/trench-isolated body mosfet for mixed signal analog/digital RF applications
US6879003B1 (en) * 2004-06-18 2005-04-12 United Microelectronics Corp. Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202196A (ja) * 1993-10-21 1995-08-04 Hyundai Electron Ind Co Ltd 静電放電消去回路のトランジスターおよびその製造方法
JPH1041469A (ja) * 1996-07-25 1998-02-13 Nec Corp 半導体装置
JP2000133799A (ja) * 1998-10-23 2000-05-12 Nec Corp 半導体静電保護素子及びその製造方法
JP2003197908A (ja) * 2001-09-12 2003-07-11 Seiko Instruments Inc 半導体素子及びその製造方法
JP2006074012A (ja) * 2004-08-06 2006-03-16 Renesas Technology Corp 双方向型静電気放電保護素子
JP2006202847A (ja) * 2005-01-18 2006-08-03 Toshiba Corp 半導体装置
JP2006319072A (ja) * 2005-05-11 2006-11-24 Denso Corp 半導体装置およびその設計方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104701373A (zh) * 2013-12-10 2015-06-10 中芯国际集成电路制造(上海)有限公司 Ldmos晶体管及其形成方法

Also Published As

Publication number Publication date
CN101803022A (zh) 2010-08-11
CN101803022B (zh) 2012-09-26
US20100200911A1 (en) 2010-08-12
JP2009088139A (ja) 2009-04-23
US8674445B2 (en) 2014-03-18
JP5165321B2 (ja) 2013-03-21

Similar Documents

Publication Publication Date Title
EP1843390A4 (en) SEMICONDUCTOR COMPONENT WITH MIS STRUCTURE AND METHOD OF MANUFACTURING THE SAME
WO2009019837A1 (ja) 炭化珪素半導体素子およびその製造方法
TW200731850A (en) Organic light-emitting transistor element and method for manufacturing the same
TW200735371A (en) Thin film transistor substrate and thin film transistor substrate manufacturing method
EP3614442A3 (en) Semiconductor device having oxide semiconductor layer and manufactoring method thereof
TW200504933A (en) Method for manufacturing semiconductor device
EP1873838A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TW200614855A (en) Organic thin film transistor array and manufacturing method thereof
TW200739972A (en) Light-emitting device and method for manufacturing the same
TW200610019A (en) Fully depleted SOI multiple threshold voltage application
WO2008099863A1 (ja) 半導体，半導体装置及び相補型トランジスタ回路装置
WO2006025609A3 (en) Thin film transistor and its manufacturing method
EP1434282A3 (en) Protective layer for an organic thin-film transistor
TW200727444A (en) Semiconductor devices and methods for forming an ESD protection device
TW200715559A (en) Semiconductor device and a method of manufacturing the same
WO2004006633A3 (en) Integrated circuit including field effect transistor and method of manufacture
EP1976011A3 (en) High breakdown voltage semiconductor circuit device and method of manufacturing the same
WO2008099528A1 (ja) 表示装置、表示装置の製造方法
TW200713576A (en) Semiconductor device
TW200727497A (en) Dielectric isolation type semiconductor device and manufacturing method therefor
WO2009041558A1 (ja) 静電気破壊保護素子、静電気破壊保護回路、半導体装置および半導体装置の製造方法
WO2008051369A3 (en) Low-cost electrostatic clamp with fast declamp time and the manufacture
WO2008142873A1 (ja) 半導体装置及びその製造方法
WO2006055639A3 (en) Systems and methods for voltage distribution via multiple epitaxial layers
TW200731432A (en) Semiconductor device and manufacturing method for the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880108156.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08832990

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12678354

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08832990

Country of ref document: EP

Kind code of ref document: A1